CN100490305C - Sleeve type amplifier - Google Patents
Sleeve type amplifier Download PDFInfo
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- CN100490305C CN100490305C CNB2005101119038A CN200510111903A CN100490305C CN 100490305 C CN100490305 C CN 100490305C CN B2005101119038 A CNB2005101119038 A CN B2005101119038A CN 200510111903 A CN200510111903 A CN 200510111903A CN 100490305 C CN100490305 C CN 100490305C
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- amplifier
- pmos
- cascode
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- nmos
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Abstract
This invention discloses a sleeve-like amplifier composed of a single-stage sleeve-like amplifier, four gain assistant circuits, a common-mode feedback circuit and a bias circuit, in which, an one-end input-one-end output high amplitude low voltage control amplifier is applied to the gain assistant circuits, two of which are type A gain assistant amplifiers and the other two are type-B amplifiers, and type-A are connected on the PMOS transistor of the single stage sleeve-like amplifier and type-B is connected on the NMOS transistor of the amplifier.
Description
Technical field
The present invention relates to the amplifier in a kind of semiconductor integrated circuit, particularly relate to a kind of sleeve type amplifier.
Background technology
Existing sleeve type amplifier circuit structure as shown in Figure 1, in order on one 3 volts power supply, to obtain 2.4V with high dc gain
P-pThe electronic scope of difference, it utilizes wideband gain auxiliary circuit to make up a PMOS cascode amplifier.It is the supercharging of single-stage sleeve type amplifier that the wideband gain auxiliary circuit of this amplifier adopts the collapsible amplifier of traditional difference input-single-ended output, has the electronic scope and the bandwidth of an improvement.
Existing sleeve type amplifier is a kind of simple PMOS cascode amplifier, and the defective of the wideband gain auxiliary circuit that it adopts is the stabilization time of having slowed down the large-signal transient.
This is owing to following two reasons cause: at first, the cascode current signal is (referring to the transistor M1 among Fig. 1～M4) handle by the PMOS transistor of low mutual conductance.Secondly, the output of wideband gain auxiliary circuit can be transformed into very different voltage from the point of safes of regulation, is recovered to essential voltage then through after a while.
For this " slowly " stable element (the PMOS transistor that refers to low mutual conductance) is quickened, consider stability, the entire gain frequency of wideband in circuit gain auxiliary circuit must be higher than-circuit bandwidth of 3dB, be equivalent to the closed circuit bandwidth of a switched-capacitor circuit, and must be lower than the second magnetic pole frequency in the main amplifier (being the single-stage sleeve type amplifier that constitutes by transistor M1～M9 among Fig. 1).That is:
BW=Gm/Cl * f, wherein: Gm is mutual conductance, and BW is a bandwidth, and Cl is an output load capacitance, and f is a frequency.
Fig. 2 is the frequency response chart of existing sleeve type amplifier, and the first half is represented the frequency response that gains among the figure; The latter half is represented the variation relation of the phase shifts of input and output with frequency.As seen from Figure 2, though existing sleeve type amplifier has the bandwidth about 1.5GHz, its gain has only about 60dB usually.Such characteristic can not satisfy circuit requirements when design high-order (Bit) is production line analog-digital converter (pipeline ADC) more than the 10Bit.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of sleeve type amplifier, and it can effectively improve the gain of single-stage sleeve type amplifier, satisfies the design needs of high-order production line analog-digital converter.
For solving the problems of the technologies described above, sleeve type amplifier of the present invention, by a single-stage sleeve type amplifier (main amplifier), four gain auxiliary circuits, common-mode feedback circuit and bias circuit are formed;
The PMOS cascode amplifier that described single-stage sleeve type amplifier is made up of four PMOS transistor M1～M4, form with the NMOS cascode amplifier that four NMOS transistors M5～M8 forms, described PMOS cascode amplifier is connected with described NMOS cascode amplifier, the NMOS cascode amplifier is connected with the drain electrode of the 9th nmos pass transistor M9, the source ground of the 9th nmos pass transistor M9;
The gain auxiliary circuit adopts the high amplitude low voltage control amplifier of single-ended input-single-ended output, and wherein two are type first gain booster amplifier, and two are type second gain booster amplifier;
The third and fourth PMOS transistor M3, M4 in the PMOS cascode amplifier is corresponding respectively to be connected with a type first gain booster amplifier, wherein, the corresponding respectively source electrode that is connected the described third and fourth PMOS transistor M3, M4 of the input of type first gain booster amplifier, the corresponding respectively grid that is connected the described third and fourth PMOS transistor M3, M4 of the output of type first gain booster amplifier;
In the NMOS cascode amplifier the 5th is connected with a type second gain booster amplifier with the 6th nmos pass transistor M5, M6 are corresponding respectively, wherein, the corresponding respectively source electrode that is connected the 5th and the 6th nmos pass transistor M5, M6 of the input of type second gain booster amplifier, the corresponding respectively grid that is connected the 5th and the 6th nmos pass transistor M5, M6 of the output of type second gain booster amplifier;
The tie point of PMOS cascode amplifier and NMOS cascode amplifier is as the output V of described sleeve type amplifier
0+, V
0-
Two inputs of common-mode feedback circuit and the output V of described sleeve type amplifier
0+, V
0-Connect the output V of common-mode feedback circuit
CmfbBe connected with the first and second PMOS transistor M1 in the PMOS cascode amplifier, the grid of M2, the source electrode of the first and second PMOS transistor M1, M2 is connected with power supply; The common-mode feedback circuit is by detecting the output V of described sleeve type amplifier
0+, V
0-Obtain mean value, remove to control the first and second PMOS transistor M1 in the single-stage sleeve type amplifier, the grid of M2 then;
Bias circuit provides operating current to single-stage sleeve type amplifier, common-mode feedback circuit and type first and type second gain booster amplifier;
Behind the grid input applied voltage of the 7th and the 8th nmos pass transistor M7, M8 in the single-stage sleeve type amplifier, be enlarged into the cascode current signal through the single-stage sleeve type amplifier, convert a cascade voltage signal respectively to after four gain booster amplifiers amplify the cascode current signal; Then, again on the grid of corresponding respectively the 3rd PMOS transistor M3, the 4th PMOS transistor M4 that is added in the single-stage sleeve type amplifier of the cascade voltage signal that is converted and the 5th NMOSNMOS transistor M5 and the 6th nmos pass transistor M6, at last by the signal after the described sleeve type amplifier output amplification.
The wideband gain auxiliary circuit that sleeve type amplifier of the present invention is used adopts the high amplitude low voltage control amplifier of single-ended input-single-ended output to replace the collapsible amplifier of traditional difference input-single-ended output to come to be the supercharging of single-stage sleeve type amplifier.The gain of existing single-stage sleeve type amplifier is risen to more than the 100dB from about 60dB.The frequency response of sleeve type amplifier of the present invention as shown in Figure 3; Wherein, the first half is represented the frequency response that gains; The latter half is represented the variation relation of the phase shifts of input and output with frequency.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is a kind of existing sleeve type amplifier circuit diagram;
Fig. 2 is the frequency response chart of existing sleeve type amplifier;
Fig. 3 is the frequency response chart of sleeve type amplifier of the present invention;
Fig. 4 is a sleeve type amplifier circuit diagram of the present invention;
Fig. 5 is a type first gain booster amplifier circuit diagram among Fig. 4;
Wherein, band letter in the metal-oxide-semiconductor symbol " P " expression PMOS, the band letter " N " expression NMOS, VDD! The expression power supply signal;
Fig. 6 is a type second gain booster amplifier circuit diagram among Fig. 4;
Wherein, band letter in the metal-oxide-semiconductor symbol " P " expression PMOS, the band letter " N " expression NMOS, VDD! The expression power supply signal;
Fig. 7 is common-mode feedback circuit figure among Fig. 4;
Fig. 8 is the gain auxiliary circuit figure of existing difference input-single-ended output.
Embodiment
In order to increase the gain of single-stage sleeve type amplifier, realize with the way that reduces bias current usually.Problem is to reduce bias plasma to fail to be convened for lack of a quorum and impel the entire gain frequency to descend, and the gain of single-stage sleeve type amplifier finally is limited in the subthreshold value zone gain of MOS transistor.
Can overcome above restriction with additional gain auxiliary circuit.One is simply gained auxiliary circuit as shown in Figure 8:
The technology of gain auxiliary circuit can be proved by the help of Fig. 8.Do not have the existence of OTA (amplifier), the gain of this common source and common grid amplifier is gm1Ro.Wherein, Ro is the resistance of spying on toward the drain electrode of transistor M27, is equal to ro2 (1+gm2ro1).OTA has been arranged in circuit, output resistance become for:
RoGE＝ro2[1+(1+Aota)gm2·r01]
Wherein, A
OtaIt is the voltage gain of OTA.The cascodes of Fig. 8 adds that the overall gain of gain auxiliary circuit is:
Avge≈Aota·(gm1·Ro)
OTA is added in the circuit, makes the original structure of the ratio of gains increase A
OtaOTA attempts the drain electrode of transistor M26 is remained on V
Bias
General custom realizes that with the folding common source and common grid amplifier of difference input gain is auxiliary in the prior art.Gain auxiliary circuit among the present invention adopts the high amplitude low voltage control amplifier of single-ended input-single-ended output.
As shown in Figure 4, sleeve type amplifier of the present invention comprises a traditional single-stage sleeve type amplifier (main amplifier), four gain booster amplifiers, common-mode feedback circuit and bias circuit.
Described single-stage sleeve type amplifier mainly is to utilize wideband gain ancillary technique to make up a PMOS cascode amplifier.Using the single-stage sleeve type amplifier can further increase energy benefit, and promptly available less electric energy and power consumption provide fabulous bandwidth.
Described single-stage sleeve type amplifier is made up of four PMOS transistor M1～M4 and five nmos pass transistor M5～M9.Bias circuit provides operating current by the control utmost point of the 9th nmos pass transistor M9 to the single-stage sleeve type amplifier.The 9th nmos pass transistor M9 that obtains operating current is actually the current source I of single-stage sleeve type amplifier
SsThe PMOS cascode amplifier of being made up of PMOS transistor M1～M4 utilizes the common source of the first and second PMOS transistor M1, M2 and voltage VDD and has produced a voltage difference V
DS, the common-mode feedback circuit is by detecting single-stage sleeve type amplifier output V
0+, V
0-Obtain mean value V
CM, remove to control the grid of the first and second PMOS transistor M1, M2 then.Input signal V
In+, V
In-Control the output of single-stage sleeve type amplifier, input signal V by the grid voltage of adjusting the 7th and the 8th nmos pass transistor M7, M8
In+, V
In-After the NMOS cascode amplifier of being made up of the 5th to the 8th nmos pass transistor M5～M8 amplifies, by output V
0+, V
0-Output.
The gain auxiliary circuit adopts the high amplitude low voltage control amplifier of single-ended input-single-ended output, and wherein two are type first gain booster amplifier, and two are type second gain booster amplifier.Type first gain booster amplifier is connected on the third and fourth PMOS transistor M3, the M4 of single-stage sleeve type amplifier.Type second gain booster amplifier is connected on the 5th and the 6th nmos pass transistor M5, the M6 of single-stage sleeve type amplifier.
The circuit structure of type first gain booster amplifier as shown in Figure 5.Form by four PMOS transistor M10～M13 and four NMOS transistors M14～M17.Bias circuit (is V shown in Figure 5 by the grid of the tenth to the 13 PMOS transistor M10～M13 and the 14 and the 15 nmos pass transistor M14, M15
B1, V
B2, V
B3End) provides operating current to type first gain booster amplifier.The the tenth to the 13 PMOS transistor M10～M13 that obtains operating current is actually the current source of type first gain booster amplifier.The common source of the tenth and the 11 PMOS transistor M10, M11 in the 2nd PMOS cascode amplifier of being made up of the tenth to the 13 PMOS transistor M10～M13 and supply voltage VDD produce a voltage difference V
DSFrom the line between the grid of drain electrode to the 16 nmos pass transistor M16 of the 14 nmos pass transistor M14 with input V
InThe cascode current signal maintain a stable status.When by input V
InAnd the cascode current signal that causes is when too big, and unnecessary electric current can be diverted to the grid of the 16 and the 17 nmos pass transistor M16, M17, thereby guarantees that type first gain booster amplifier works under the state of low pressure.Input V
InSignal inputs to the common source input circuit that is made of the 12 PMOS transistor M12, and after the 2nd NMOS cascode amplifier of being made up of the 14 to the 17 nmos pass transistor M14～M17 amplifies, by output V
OutOutput.
The circuit structure of type second gain booster amplifier as shown in Figure 6.Form by four PMOS transistor M18～M21 and four NMOS transistors M22～M25.Four PMOS transistor M18～M21 have formed the 3rd PMOS cascode amplifier, and four NMOS transistors M22～M25 has formed the 3rd NMOS cascode amplifier.Bias circuit (is V shown in Figure 6 by the grid of the 20 and the 21 PMOS transistor M20, M21 and the 22 to the 25 nmos pass transistor M22～M25
B2, V
B3, V
B4End) provides operating current to type second gain booster amplifier.The 22 to the 25 nmos pass transistor M22～M25 that obtains operating current is actually the current source of type second gain booster amplifier.Common source and supply voltage VDD by the 18 and the 19 PMOS transistor M18, M19 in the 3rd PMOS cascode amplifier produce a voltage difference V
DSFrom the line between the drain electrode of grid to the 21 PMOS transistor M21 of the 19 PMOS transistor M19 with input V
InThe cascode current signal maintain a stable status.When by input V
InAnd the cascode current signal that causes is when too big, and unnecessary electric current can be diverted to the grid of the 18 and the 19 PMOS transistor M18, M19, thereby guarantees that type second gain booster amplifier works under the state of low pressure.Input V
InSignal inputs to the common source input circuit that is made of the 23 nmos pass transistor M23, and by after the amplification of the 3rd PMOS cascode amplifier, by output V
OutOutput.
Sleeve type amplifier of the present invention adopts the high amplitude low voltage control amplifier of single-ended input-single-ended output to realize that gain is auxiliary.It not only realizes that than the collapsible amplifier of existing difference input-single-ended output the gain supplementary structure is simple, but also has following advantage:
1, not only gives sufficient realization scope and reach the precision of 10bit, but also avoided gain imbalance effect between the radio frequency channel.
2, the input of the high amplitude low voltage control amplifier of single-ended input-single-ended output all is at transistorized source electrode, operate in the low-down bias current, can from the transistor of minimum dimension almost, make up, thus (GBW) reduction that reduces gain bandwidth to greatest extent.And same bias current can be used on the type first gain booster amplifier and type second gain booster amplifier of main amplifier and low voltage control.Opposite with other low voltage control amplifier layout is that its output amplitude is not lowered, because it only needs a drain-source voltage (V
Ds) voltage be added between the input and electrical mains of feedback amplifier (being four gain amplifiers among Fig. 4), produce rational 0.8 a vor signal amplitude at output.
In order to realize the stable state of an accurate stage gain, feedback amplifier (being four gain booster amplifiers among Fig. 4) is used the additional small-sized capacitor C of 50fF～250fF respectively at their output
1, C
2Way by frequency band limits.
The output V of common-mode feedback (being the Vcmfb-629 among Fig. 4) circuit input end and single-stage sleeve type amplifier
0+, V
0-Connect the output V of common-mode feedback circuit
CmfbBe connected with the grid of the first and second PMOS transistor M1, M2.
Sleeve type amplifier of the present invention has been used a switching capacity common-mode feedback circuit.This circuit uses one group to keep electric capacity and one group of recovery electric capacity, and circuit structure as shown in Figure 7.
Described common-mode feedback circuit is made up of six switches (indicating six rectangle symbols of Switch among Fig. 7) and two groups of electric capacity.Capacitor C 1-1 among Fig. 7 and C1-2 restore electric capacity, and capacitor C 2-1 and C2-2 keep electric capacity.This circuit is by the V among Fig. 7
0+And V
0-Bring in the mean value V that detects the main amplifier output
CMBy the adjusted voltage of common-mode feedback circuit by the V among Fig. 7
CmfbEnd is exported, and goes to control the grid voltage of the first and second PMOS transistor M1, M2 in the main amplifier.
Restore electric capacity and run between two non-overlapping clock phases, make entire sleeve formula amplifier under the framework of amplifier shared structure, remain on the output common-mode level as ping-pong structure.In addition, sleeve type amplifier of the present invention uses independent input and output common-mode level.
Bias circuit is a typical circuit (seeing the Bias-4out-728 among Fig. 4), and its major function is to provide operating current (by the grid of the transistor M9 among Fig. 4) to main amplifier.Also provide operating current simultaneously to type first and type second gain booster amplifier.
The present invention is by grid (referring to Fig. 4) the input applied voltage of the 7th in the sleeve type amplifier and the 8th nmos pass transistor M7, M8.Different with single-stage sleeve type amplifier operation principle is to replace the input voltage that amplifies the single-stage sleeve type amplifier.The cascode current signal by first to fourth PMOS transistor M1～M4 generation among Fig. 4 of the present invention is by the V of four gain booster amplifiers among Fig. 4
InThe end input converts a cascade voltage signal to after the high amplitude low voltage control amplifier amplification by additional single-ended input-single-ended output.Then, the cascade voltage signal that is converted is applied on the grid (being the grid of transistor M3～M6 among Fig. 4) of cascode amplifier.So the current bias transistor of cascode amplifier (is the static drain-source voltage of transistor M3 among Fig. 4～M6), than the threshold voltage V of the gain auxiliary circuit of existing difference input-single-ended output
Tp+ V
Eff, can be reduced to effective Controlling Source voltage V
EffIn the gain auxiliary circuit pattern of difference input-single-ended output, effective Controlling Source voltage V
EffBe increased to about 1V
P-p, be equivalent to 2 times V
TpThe electronic scope of output amplitude scope.Signal after amplifying by the output of single-stage sleeve type amplifier at last.
Simulation result shows that sleeve type amplifier of the present invention reaches 67 ° of margin of stabilities when coming emulation with 3.0 volts of power supplys, and greater than the DC current gain of 100-dB with greater than the gain bandwidth (referring to Fig. 3) of 1.2GHz, the while also makes the amplitude of oscillation of output signal remain on 3.2V
P-p
Claims (4)
1, a kind of sleeve type amplifier, comprise a single-stage sleeve type amplifier, described single-stage sleeve type amplifier is by four PMOS transistors (PMOS cascode amplifier of M1～M4) form, four NMOS transistors (M5～M8) form by the NMOS cascode amplifier and the 9th nmos pass transistor (M9) of composition, described PMOS cascode amplifier is connected with described NMOS cascode amplifier, described NMOS cascode amplifier is connected with the drain electrode of the 9th nmos pass transistor (M9), the source ground of the 9th nmos pass transistor (M9); Also comprise the gain auxiliary circuit, it is characterized in that:
Described gain auxiliary circuit adopts the high amplitude low voltage control amplifier of single-ended input-single-ended output, and wherein two are type first gain booster amplifier, and two are type second gain booster amplifier;
The third and fourth PMOS transistor (M3, M4) in the PMOS cascode amplifier is corresponding respectively to be connected with a type first gain booster amplifier, wherein, the input of type first gain booster amplifier correspondence respectively is connected the source electrode of the described third and fourth PMOS transistor (M3, M4), and the output of type first gain booster amplifier correspondence respectively is connected the grid of the described third and fourth PMOS transistor (M3, M4);
In the NMOS cascode amplifier the 5th is connected with a type second gain booster amplifier with the 6th nmos pass transistor (M5, M6) is corresponding respectively, wherein, the input of type second gain booster amplifier correspondence respectively is connected the source electrode of the 5th and the 6th nmos pass transistor (M5, M6), and the output of type second gain booster amplifier correspondence respectively is connected the grid of the 5th and the 6th nmos pass transistor (M5, M6);
The tie point of PMOS cascode amplifier and NMOS cascode amplifier is as the output (V of described sleeve type amplifier
0+, V
0-));
Two inputs of common-mode feedback circuit and the output (V of described sleeve type amplifier
0+, V
0-) connect the output (V of common-mode feedback circuit
Cmfb) with the PMOS cascode amplifier in a PMOS transistor (M1) and the grid of the 2nd PMOS transistor (M2) be connected, the source electrode of a PMOS transistor (M1) and the 2nd PMOS transistor (M2) is connected with power supply; The common-mode feedback circuit is by detecting the output (V of described sleeve type amplifier
0+, V
0-) obtain mean value, remove to control the grid of a PMOS transistor (M1) and the 2nd PMOS transistor (M2) then;
Bias circuit provides operating current to single-stage sleeve type amplifier, common-mode feedback circuit and type first and type second gain booster amplifier;
Behind the 7th nmos pass transistor (M7) of the NMOS cascode amplifier of single-stage sleeve type amplifier and the grid of the 8th nmos pass transistor (M8) the input applied voltage, be enlarged into the cascode current signal through the single-stage sleeve type amplifier, convert a cascade voltage signal respectively to after four gain booster amplifiers amplify the cascode current signal; Then, again on the grid of corresponding respectively the 3rd PMOS transistor (M3), the 4th PMOS transistor (M4) and the 5th nmos pass transistor (M5) that is added in the single-stage sleeve type amplifier of the cascade voltage signal that is converted and the 6th nmos pass transistor (M6), at last by the signal after the described sleeve type amplifier output amplification.
2, sleeve type amplifier according to claim 1, it is characterized in that: described type first gain booster amplifier is by four PMOS transistors (the 2nd PMOS cascode amplifier of M10～M13) form, and four NMOS transistors (the 2nd NMOS cascode amplifier that M14～M17) forms is formed, and described the 2nd PMOS cascode amplifier is connected with the 2nd NMOS cascode amplifier; Common source and supply voltage (VDD) by the tenth and the 11 PMOS transistor (M10, M11) of the 2nd PMOS cascode amplifier produce a voltage difference, from the input (V of the line between the grid of the 16 nmos pass transistor (M16) of drain electrode to the two NMOS cascode amplifiers of the 14 nmos pass transistor (M14) of the 2nd NMOS cascode amplifier with type first gain booster amplifier
In) the cascode current signal maintain a stable status; When by described input (V
In) and the cascode current signal that causes when too big, unnecessary electric current can be diverted to the grid of the 16 and the 17 nmos pass transistor (M16, M17) of the 2nd NMOS cascode amplifier, thereby assurance type first gain booster amplifier is worked under the state of low pressure; Described input (V
In) signal inputs to the common source input circuit that is made of the 12 PMOS transistor (M12) of the 2nd PMOS cascode amplifier, and after amplifying by the 2nd NMOS cascode amplifier, by the output (V of type first gain booster amplifier
Out) output.
3, sleeve type amplifier according to claim 1, it is characterized in that: described type second gain booster amplifier is by four PMOS transistors (the 3rd PMOS cascode amplifier of M18～M21) form, and four NMOS transistors (the 3rd NMOS cascode amplifier that M22～M25) forms is formed, and described the 3rd PMOS cascode amplifier is connected with the 3rd NMOS cascode amplifier;
The common source of the 18 and the 19 PMOS transistor (M18, M19) of the 3rd PMOS cascode amplifier and supply voltage (VDD) produce a voltage difference, from the input (V of the line between the drain electrode of the 21 PMOS transistor (M21) of grid to the three PMOS cascode amplifiers of the 19 PMOS transistor (M19) of the 3rd PMOS cascode amplifier with type second gain booster amplifier
In) the cascode current signal maintain a stable status; When by described input (V
In) and the cascode current signal that causes when too big, unnecessary electric current can be diverted to the grid of the 18 and the 19 PMOS transistor (M18, M19) of the 3rd PMOS cascode amplifier, thereby assurance type second gain booster amplifier is worked under the state of low pressure; Described input (V
In) signal inputs to the common source input circuit that is made of the 23 nmos pass transistor (M23) of the 3rd NMOS cascode amplifier, and after amplifying by the 3rd PMOS cascode amplifier, by the output (V of type second gain booster amplifier
Out) output.
4, according to any one described sleeve type amplifier in the claim 1 to 3, it is characterized in that: the output of described gain auxiliary circuit is parallel with the little electric capacity of a 50fF～250fF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101119038A CN100490305C (en) | 2005-12-23 | 2005-12-23 | Sleeve type amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101119038A CN100490305C (en) | 2005-12-23 | 2005-12-23 | Sleeve type amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1988372A CN1988372A (en) | 2007-06-27 |
| CN100490305C true CN100490305C (en) | 2009-05-20 |
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ID=38185029
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101119038A Expired - Fee Related CN100490305C (en) | 2005-12-23 | 2005-12-23 | Sleeve type amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100490305C (en) |
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2005
- 2005-12-23 CN CNB2005101119038A patent/CN100490305C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1988372A (en) | 2007-06-27 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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