CN100485506C - Pixel structure and its forming method and driving method - Google Patents

Abstract

The utility model relates to a pixel structure and the forming method and the driving method of the pixel structure. The pixel structure is arranged on a first substrate and is electrically connected with at least one scan line and at least one data line, wherein the pixel structure comprises a first switching element, a second switching element, at least one pixel electrode, at least one control electrode and at least one coupling electrode, wherein the first switching element is electrically connected with the scan line and the data line, while the second switching element is electrically connected with the scan line and the data line too. The pixel electrode is electrically connected with the second switching element and the control electrode is electrically connected with the first switching element, and the coupling electrode is arranged under part of the control electrode. The utility model provides a pixel structure and the collocated driving design to drive the voltage of the control electrode stably and enable the absolute value of the voltage difference of the voltage of the control electrode and the voltage of the common electrode of the upper substrate larger than the absolute value of the voltage difference of the voltage of the pixel electrode and the voltage of the common electrode of the upper substrate substantially.

Description

Dot structure and forming method thereof and driving method

Technical field

The present invention relates to dot structure (pixel structure), particularly relate to LCD (liquidcrystal display; LCD) dot structure.

Background technology

Be respectively vertically aligned (vertical alignment shown in Figure 1A, Figure 1B and Fig. 1 C; VA), vertically aligned (the multi-domain vertical alignment of multiple domain; MVA) with vertically aligned (the patterned vertical alignment of patterning; The sectional view of dot structure PVA), generally speaking, vertically aligned (VA) only has transparent conducting glass 11 (as indium tin oxide at infrabasal plate 10; ITO) slit SL design, and utilize the electric field E of its generation to distribute liquid crystal molecule LC is turned to, multiple domain vertically aligned (MVA) then by the transparent conducting glass 11 of the protrusion (protrusion) 15 of upper substrate 13 and infrabasal plate 10 (as indium tin oxide; ITO) slit SL produces Electric Field Distribution, so that liquid crystal molecule LC turns to, patterning vertically aligned (PVA) then all has transparent conducting glass 11 (as indium tin oxide at upper and lower base plate; ITO) slit SL design, and the electric field E that utilizes its generation distributes liquid crystal molecule LC is turned to, the liquid crystal molecule that Fig. 2 A and Fig. 2 B are respectively vertically aligned (VA) and multiple domain vertically aligned (MVA) applies distributed mode graphoid after 20 milliseconds when voltage, generally speaking, the reaction velocity of vertically aligned (VA) is slower, especially at the electrode middle body, shown in Fig. 2 A, after electrode application voltage, liquid crystal molecule LC by the transparent conducting glass 21 of infrabasal plate 20 (as indium tin oxide; ITO) slit SL begins to topple over, and in 20 milliseconds, middle section is not toppled over as yet, in the time of 40 milliseconds, just topples over (not being shown among the figure) fully; Multiple domain vertically aligned (MVA) utilizes the protrusion (protrusion) 25 of upper substrate 23 to make liquid crystal molecule LC that tilt angle be arranged, and therefore after 20 milliseconds reaction time, the liquid crystal molecule LC of main plot all topples over fully, shown in Fig. 2 B; But with tradition vertically aligned (VA) in comparison, multiple domain vertically aligned (MVA) still has the aftermentioned shortcoming with patterning vertically aligned (PVA): one, upper substrate needs extra manufacturing process, multiple domain vertically aligned (MVA) needs to produce the technology of protrusion, and patterning vertically aligned (PVA) needs to produce transparent conducting glass (as indium tin oxide; ITO) technology of slit, two, the upper substrate protrusion of multiple domain vertically aligned (MVA) is owing to can make liquid crystal molecule produce tilt angle, therefore can cause the light leakage phenomena of dark attitude in this zone, three, patterning vertically aligned (PVA) is not owing to there is tilt angle, reaction is slower than multiple domain vertically aligned (MVA), four, multiple domain vertically aligned (MVA) and patterning vertically aligned (PVA) are owing to need the overall co-ordination of upper and lower base plate to produce desirable Electric Field Distribution, therefore comparatively strict on process conditions, its upper and lower base plate needs accurate the aligning, otherwise two district's reaction velocitys are inconsistent about pixel easily, and then cause the reaction time delay of panel integral body, simultaneously also cause extra disclination line (disclination line), make penetrance reduce.

All problem in view of the above, prior art is made control electrode CE at infrabasal plate 30 at present, to produce electric field E liquid crystal molecule LC is toppled over, and as shown in Figure 3, its main type of drive can be divided into following three kinds.

First kind of driving method is U.S. Pat 6,407,791 and the direct driving method that disclosed of open application case US2003/0112397 and US2004/0046914, this type is the control electrode CE that direct impressed voltage is given infrabasal plate, because liquid crystal panel is from top to bottom to drive line by line, and exchange positive-negative half-cycle polarity in turn, in addition, control electrode also drives with pixel electrode and changes magnitude of voltage, therefore need extra many one group of integrated circuit to come the drive controlling electrode, and make the conversion of its voltage and sweep trace synchronous, as shown in Figure 4, wherein, 21 ' represent the common electrode current potential, 22 ' represent the picture signal of odd-numbered line, 23 ' represent the scanning-line signal of n row, 24 ' represent the scanning-line signal of n+1 row, 25 ' represent the signal of the top control electrode of n row, 26 ' represent the signal of the below control electrode of n row, 27 ' represent the signal of the top control electrode of n+1 row, 28 ' represent the signal of the below control electrode that n+1 is listed as, this mode major defect is: one, need one group of extra drive integrated circult, so that cost is higher, two, the drive integrated circult of existing liquid crystal panel is not supported this kind type of drive.

Second kind of driving method is U.S. Pat 6,466,293, US6,515,719 and the driving method that disclosed of open application case US2002/0109813 and US2004/0135147, the explanation of its element as after, data line DL and sweep trace WL represent the lead of this thin film transistor (TFT) of driving TFT signal respectively.Common electrode line COM representative provides the lead of common electric voltage Vcom.This type is to allow pixel be in to float (floating) state, and control electrode CE utilizes capacity coupled mode to control the voltage of pixel electrode PE then, shown in Fig. 5 A and Fig. 5 B, as impressed voltage V _DEMake it have control electrode voltage V for control electrode CE _CEAfterwards, the current potential Vp of pixel electrode can be coupled to lower current potential by capacitor C c (being made of control electrode CE and pixel electrode PE), and its voltage relationship formula is $\mathrm{Vp}=V_{\mathrm{DE}}\×\frac{\mathrm{Cc}}{\mathrm{Cc}+C_{\mathrm{LC}}},$ Yet, the problem of this mode is: one, pixel electrode is in floating state, therefore electrode is accumulated static charge easily and is not had the channel of leading off, therefore still can cause the phenomenon (image sticking) of image retention, two, owing to pixel electrode voltage is to produce by coupling capacitance Cc, therefore the voltage of pixel electrode can be lower than conventional ADS driving voltage, cause penetrance relatively poor, improve this phenomenon as desire, must increase the value of data line DL driving voltage, that is need change the drive integrated circult (for example increasing to the driving voltage of 7V) that adopts high-amplitude voltage from the 5V driving voltage, the integrated circuit of this kind mode is difficult to be made, and power consumption is also higher.

The driving method of the third form is disclosed in the open application case 2004/0046914 and 2004/0135147 of the U.S., and it utilizes a plurality of thin film transistor (TFT)s (thin film transistor; TFT) voltage of indivedual drive controlling electrodes and pixel electrode in different time, the equivalent electrical circuit of this kind type of drive as shown in Figure 6, type of drive then illustrate as after, V _CERepresent the voltage of control electrode and pixel electrode respectively with Vp, data line n and sweep trace n represent data line and the sweep trace that drives this pixel electrode respectively, sweep trace n-1 is the sweep trace of the last pixel of control, data line n-1 is the data line of left pixel electrode, under counter-rotating (dot inversion) driving condition, the left and right sides is opposite with the driving voltage polarity of both sides up and down, when last sweep trace n-1 conducting, and transistor T FT ₂With TFT ₃Conducting, the voltage Vd2 of positive polarity and the voltage Vd3 of negative polarity impose on control electrode V respectively _CEWith pixel electrode Vp, when last sweep trace n-1 closes, transistor T FT ₂With TFT ₃Close control electrode V _CEVoltage is Vd2, and pixel electrode voltage is Vp, when sweep trace n conducting, and transistor T FT ₁Conducting, the pixel electrode current potential is moved to+Vd1 by-Vd3, and control electrode voltage increases to Vd2 by Vd2 through coupling capacitance Cc and adds that (product of Vd1-(Vd3)) and capacitive coupling amount, this kind mode has following point: one, voltage V _CESignal Vd2, Vd3 by previous pixel decide, and voltage V _CECan influence the brightness of pixel, therefore two pixels are influential each other easily up and down, and a too many thin film transistor (TFT) is arranged within two, pixels, increase the complexity of technology.

Summary of the invention

For overcoming the defective of prior art, a kind of dot structure according to one embodiment of the present of invention, be arranged on first substrate, and be electrically connected at least one sweep trace and at least one data line, this dot structure comprises first switching device, second switching device, at least one pixel electrode, at least one control electrode and at least one coupling electrode, first switching device is electrically connected at this sweep trace and this data line, second switching device is electrically connected at this sweep trace and this data line, pixel electrode is electrically connected at this second switching device, control electrode is electrically connected at this first switching device, and coupling electrode is positioned at the below of this control electrode of part.

Aforesaid dot structure wherein, has at least one coupling condenser between this coupling electrode of part and this part control electrode.

Aforesaid dot structure wherein, has at least one control capacitor between this control electrode of part and this pixel electrode of part.

Aforesaid dot structure also comprises at least one first common electrode wire, is positioned at the below of this pixel electrode of part.

Aforesaid dot structure wherein has the first common capacitor between this pixel electrode of part and this common electrode wire of part.

Aforesaid dot structure, wherein this first switching device comprises transistor, this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this control electrode.

Aforesaid dot structure, wherein this second switching device comprises transistor, this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this pixel electrode.

Aforesaid dot structure comprise that also correspondence is arranged at second substrate of this first substrate, and this second substrate has common electrode.

Aforesaid dot structure wherein, has at least one first capacitor between this common electrode of this second substrate and this pixel electrode of part.

Aforesaid dot structure wherein, has at least one second capacitor between this common electrode of this second substrate and this control electrode of part.

Aforesaid dot structure also comprises at least one second common electrode wire, is positioned at the below of this pixel electrode of part.

Aforesaid dot structure wherein, between this first common electrode wire, this second common electrode and this pixel electrode of part, has at least one first common capacitor and at least one second common capacitor respectively.

Aforesaid dot structure wherein, puts on signal and this second common electrode wire of this first common electrode wire, is different in essence.

Aforesaid dot structure, wherein, the signal that puts on the signal of this first common electrode wire and this second common electrode wire is identical in fact.

Aforesaid dot structure wherein, puts on the signal of this second common electrode wire and the signal of this coupling electrode and is different in essence.

Aforesaid dot structure, wherein, this signal of this this first common electrode wire and this signal of this second common electrode wire are essentially anti-phase.

Aforesaid dot structure, wherein, the voltage difference absolute value of this control electrode and this common electrode is different in essence in the voltage difference absolute value of this pixel electrode and this common electrode.

Aforesaid dot structure, wherein, the voltage difference absolute value of this control electrode and this common electrode is in fact greater than the voltage difference absolute value of this pixel electrode and this common electrode.

Aforesaid dot structure, wherein, the material of this control electrode is same as one of them of material of the material of this data line and this pixel electrode in fact.

Aforesaid dot structure, wherein, the material of this coupling electrode is same as one of them of material of the material of this sweep trace and this data line in fact.

A kind of display element according to an alternative embodiment of the invention comprises aforesaid dot structure.

A kind of electronic component according to an alternative embodiment of the invention comprises aforesaid display element.

Formation method according to a kind of dot structure of an alternative embodiment of the invention, this dot structure is formed on first substrate, and be electrically connected at least one sweep trace and at least one data line, this method comprises formation first switching device, form second switching device, form at least one pixel electrode, form at least one control electrode and form at least one coupling electrode, first switching device is electrically connected at this sweep trace and this data line, second switching device is electrically connected at this sweep trace and this data line, pixel electrode is electrically connected at this second switching device, control electrode is electrically connected at this first switching device, and coupling electrode is positioned at the below of this control electrode of part.

Aforesaid method also comprises, forms the below of at least one first common electrode line in this pixel electrode of part.

Aforesaid method also comprises, forms the below of at least one second common electrode line in this pixel electrode of part.

Aforesaid method wherein, puts on the signal of this first common electrode wire and the signal of this second common electrode wire and is different in essence.

Aforesaid method, wherein, the signal that puts on the signal of this first common electrode wire and this second common electrode wire is identical in fact.

Aforesaid method wherein, puts on the signal of this second common electrode wire and the signal of this coupling electrode and is different in essence.

Aforesaid method, wherein, this signal of this first common electrode wire and this signal of this second common electrode wire are essentially anti-phase.

Aforesaid method, wherein, the material of this control electrode is same as one of them of material of the material of this data line and this pixel electrode in fact.

Aforesaid method, wherein, the material of this coupling electrode be same as in fact the material of this sweep trace and this data line the material volume one of them.

Aforesaid method, wherein this first switching device comprises transistor, this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this control electrode.

Aforesaid method, wherein this second switching device comprises transistor, this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this pixel electrode.

Driving method according to a kind of dot structure of an alternative embodiment of the invention, this dot structure is arranged on first substrate, and be electrically connected at least one sweep trace and at least one data line, and it has first switching device, second switching device, at least one pixel electrode, at least one control electrode and at least one coupling electrode, this driving method comprises that the voltage that provides corresponding to video data is to pixel electrode and this control electrode, make this pixel electrode and this control electrode be in floating state, provide coupled voltages to be coupled to this control electrode by at least one coupling capacitance to this coupling electrode and with the variable quantity of this coupled voltages, make the voltage difference of this control electrode and common electrode in fact greater than the voltage difference of this pixel electrode and this common electrode, wherein this common electrode is positioned on second substrate, and corresponding to this first substrate.

Aforesaid driving method, also comprise: the end of first coupled voltages to first storage capacitors is provided, and the variable quantity of this first coupled voltages is coupled to this pixel electrode by this first storage capacitors, wherein the other end of this first storage capacitors is coupled to this pixel electrode; And; The end of second coupled voltages to second storage capacitors is provided, and by this second storage capacitors the variable quantity of this second coupled voltages is coupled to this pixel electrode, wherein the other end of this second storage capacitors is coupled to this pixel electrode.

Aforesaid driving method, wherein, this first coupled voltages and this second coupled voltages signal are different in essence.

Aforesaid driving method, wherein, this first coupled voltages is identical in fact with this second coupled voltages signal.

Aforesaid driving method, wherein, this first coupled voltages and this second coupled voltages signal are essentially anti-phase.

The present invention proposes a kind of dot structure and collocation drives design, with the voltage of drive controlling electrode stably, make its voltage difference absolute value that reaches control electrode voltage and upper substrate common electrode voltage in fact greater than the voltage difference absolute value of pixel electrode voltage and upper substrate common electrode voltage.

For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., elaborate.

Description of drawings

Be respectively vertically aligned shown in Figure 1A, Figure 1B and Fig. 1 C, multiple domain is vertically aligned and the sectional view of the vertically aligned dot structure of patterning.

Fig. 2 A and Fig. 2 B are respectively the electric field and the liquid crystal molecule distributed mode graphoid of vertically aligned (VA) and multiple domain vertically aligned (MVA).

Figure 3 shows that the synoptic diagram that tradition utilizes control electrode control liquid crystal molecule to turn to.

Figure 4 shows that the signal waveforms of traditional direct drive controlling electrode.

Figure 5 shows that tradition utilizes coupling capacitance to drive the synoptic diagram of pixel electrode.

Figure 6 shows that the equivalent circuit diagram that uses a plurality of transistor controls drive electrodes.

Figure 7 shows that synoptic diagram according to the pixel-driving circuit of one embodiment of the invention.

Fig. 8 A to Fig. 8 E is the mask layout that is compatible to existing thin film transistor (TFT) technology.

Fig. 9 A and Fig. 9 B are depicted as the required mask layout of upper substrate.

Be respectively the liquid crystal molecule distribution situation of the xsect of pixel of the present invention shown in Figure 10 A and Figure 10 B in dark attitude and bright attitude.

Figure 11 shows that according to the required drive signal waveform figure of the dot structure of the embodiment of the invention.

Figure 12 A to Figure 12 E is depicted as according to the embodiment of the invention two coupling electrodes is designed mask synoptic diagram in a pixel.

Figure 13 A to Figure 13 H is depicted as the graph of a relation of control electrode and pixel electrode.

Figure 14 is the sectional view according to the pixel of another embodiment of the present invention.

Figure 15 A to Figure 15 C is depicted as the required mask layout of pixel of another embodiment of the present invention.

Figure 16 is the sectional view according to the pixel of another embodiment of the present invention.

The xsect of pixel that is respectively Figure 16 shown in Figure 17 A and Figure 17 B is in the liquid crystal molecule distribution situation of dark attitude and bright attitude.

Figure 18 A to Figure 18 C is depicted as the required mask layout of pixel of another embodiment of the present invention.

Figure 19 is the sectional view according to the pixel of another embodiment of the present invention.

Figure 20 A will form the required mask layout of pixel of storage capacitors between two coupling electrodes and the pixel electrode.

Be respectively the sectional view and the equivalent circuit diagram of the pixel of Figure 20 A shown in Figure 20 B and Figure 20 C.

Figure 21 A and Figure 21 B are the relation of control electrode and pixel electrode.

Shown in Figure 22 is the synoptic diagram that comprises the display element of disclosed dot structure.

Shown in Figure 23 is the synoptic diagram that comprises the electronic component of display element shown in Figure 21.

Wherein, description of reference numerals is as follows:

10～transparent conducting glass; CE～control electrode;

100～infrabasal plate; 110～dielectric layer;

120～passivation layer; The transparency conducting layer of 130～patterning;

The transparency conducting layer of 140～upper substrate; 150～colored filter;

160～upper substrate; LC～liquid crystal molecule;

V _C～coupling electrode; V _CE～control electrode;

200～display element; 210～dot structure;

300～electronic component.

Embodiment

Figure 7 shows that the synoptic diagram according to the pixel-driving circuit of one embodiment of the invention, this pixel-driving circuit comprises the first transistor T1, transistor seconds T2, coupling electrode V _C, the first coupling capacitance C _CE, and the second coupling capacitance C _EP, the first transistor T1 has grid to be coupled to sweep trace WL, and its source electrode is coupled to data line DL, and its drain electrode is coupled to control electrode V _CE, transistor seconds T2 has grid to be coupled to this sweep trace WL, and its source electrode is coupled to this data line DL, and its drain electrode is coupled to pixel electrode Vp, the first coupling capacitance C _CEBe coupled to this control electrode V _CEWith this coupling electrode V _CBetween, the second coupling capacitance C _EPBe coupled to this control electrode V _CEAnd between this pixel electrode Vp, when sweep trace WL is integrated drives to noble potential, the first transistor T1 and transistor seconds T2 conducting, the signal on the data line DL can be delivered to pixel electrode Vp and control electrode V _CE, when the first transistor T1 and transistor seconds T2 close, coupling electrode V _CVoltage via coupling electrode C _CEBe coupled to control electrode V _CETherefore, control electrode V _CEVoltage change to some extent, make control electrode V _CEThe voltage difference absolute value of common electrode Vcom (CF) voltage of voltage and upper substrate is in fact greater than the voltage difference absolute value of common electrode Vcom (CF) voltage of pixel electrode Vp voltage and upper substrate.

In the circuit diagram of Fig. 7, control electrode V _CE, pixel electrode Vp and common electrode relation as follows:

V _CE(RMS)＝Vp+ΔV _CE(RMS)

Vp′＝Vp+ΔVp _(RMS)

ΔV _C1＝V _C1(max)-V _C1(min)

${\mathrm{\&Delta;V}}_{\mathrm{CE}\left(\mathrm{RMS}\right)}=\frac{{\mathrm{\&Delta;V}}_{p\left(\mathrm{RMS}\right)}\&times;C_{\mathrm{EP}}+{\mathrm{\&Delta;<figure-callout\; id="1"\; label="V\; C"\; filenames="C200710153266E00321.png,C200710153266E00391.png"\; state="\{\{state\}\}">V</figure-callout>}}_C\&times;C_{\mathrm{CE}}}{C_{\mathrm{CE}}+C_{\mathrm{LC}\left(\mathrm{CE}\right)}+C_{\mathrm{EP}}//C_{\mathrm{LC}}}$

${\mathrm{\&Delta;V}}_{p\left(\mathrm{RMS}\right)}=\frac{{\mathrm{\&Delta;V}}_{\mathrm{CE}}\&times;C_{\mathrm{EP}}}{C_{\mathrm{LC}}+(C_{\mathrm{EP}}//(C_{\mathrm{CE}}+C_{\mathrm{LC}\left(\mathrm{CE}\right)})}$

In order to realize above-mentioned circuit, as follows for an embodiment, Fig. 8 A to Fig. 8 E is the layout that is compatible to existing thin film transistor (TFT) technology, Fig. 8 A is depicted as the layout of the first metal layer (metal 1) M1, it mainly is to be used for making grid (gate), gate line (gate line), at least two common electrode wire com1, com2 and coupling electrode C required for the present invention, preferably, it is from one of them extension of common electrode wire, but be not limited thereto, also can all do not extend or all extend from the common electrode line from common electrode wire.Fig. 8 B is depicted as the layout of semiconductor layer S1, it mainly is the channel region that is used for making thin film transistor (TFT), and the material of semiconductor layer of the present invention comprises amorphous silicon, polysilicon, monocrystalline silicon, microcrystal silicon, germanic above-mentioned lattice material or the combination of other material or above-mentioned material.The present invention is with amorphous silicon (amorphoussilicon; α-Si) is for implementing example, but is not limited thereto.Fig. 8 C is depicted as the layout of second metal level (metal2) M2, and it mainly is to be used for making data line (data line), source/drain and control electrode CE required for the present invention.At this moment, grid, semiconductor layer and source/drain (for example: thin film transistor (TFT)) promptly constitute switching device.Fig. 8 D is depicted as the layout of through hole (through hole), to expose the source/drain of part.Fig. 8 E is depicted as the layout of pixel electrode PE, makes pixel electrode PE be electrically connected at two switching devices (T1, T2) one of them.The material of pixel electrode PE comprises that light transmissive material (for example: indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), cadmium tin-oxide (CTO), aluminium tin-oxide (ATO) Yangization Han, or other material, or the combination of above-mentioned material), reflecting material (for example: gold, silver, copper, iron, tin, plumbous, nickel, cadmium, molybdenum, neodymium, tungsten, titanium, tantalum, or other material, or the nitride of above-mentioned material, or the oxide of above-mentioned material, or the oxides of nitrogen of above-mentioned material, or the alloy of above-mentioned material, or the combination of above-mentioned material), or the combination of above-mentioned material.The present invention serves as to implement example with indium tin oxide (ITO) or indium-zinc oxide transparent materials such as (IZO), but is not limited thereto.Fig. 9 A and Fig. 9 B are depicted as the required layout of upper substrate, the part of upper substrate (being also referred to as second substrate) is by black surround (black matrix) BM, colored filter (color filter, CF) and common electrode COM form, the formed pixel of combination of this upper substrate and infrabasal plate (being also referred to as first substrate) comprises two thin film transistor (TFT)s, data line DL powers to the control electrode CE of second metal level (metal 2) by the thin film transistor (TFT) T2 on right side, and data line DL powers to pixel electrode PE by the thin film transistor (TFT) T1 in left side in addition.Wherein, one of at least the material of upper and lower substrate comprises the material of transparent (as: glass, quartz or materials similar), opaque (as: wafer, pottery or materials similar) or pliability (as: plastic cement, rubber, polycarbonate, poly-methyl propionyl acid methyl esters, polyesters, polyalkenes or materials similar), the present invention is that the glass with transparent material serves as to implement example, but is not limited thereto.And the type of the first transistor T1 and transistor seconds T2 can be one of at least top gate type (top-gate type), bottom gate type (bottom-gate type, as: back channel-etch type (BCE), etch-stop type (etching-stopper) or similar type) or above-mentioned combination, the present invention is to serve as to implement example with the bottom gate type transistor, but is not limited thereto.Moreover active layer is the partly or entirely alloy of Doped n-type, p type or above-mentioned mixing also, and the present invention is that the alloy with the part Doped n-type serves as to implement example, but is not limited thereto.

Be respectively the liquid crystal molecule distribution situation of the xsect of pixel of the present invention shown in Figure 10 A and Figure 10 B in dark attitude and bright attitude, wherein, Figure 10 A and Figure 10 B are that to be positioned on the infrabasal plate 100 with coupling electrode C be the example explanation, dielectric layer 110 is covered on the coupling electrode C, control electrode CE is formed on the dielectric layer 110, and be positioned at above the coupling electrode C, passivation layer (Passivation) 120 is covered on the control electrode CE, then behind the transparency conducting layer 130 patterned (pattemed), be formed on the passivation layer (Passivation) 120, above the transparency conducting layer 130 of patterning, liquid crystal molecule LC arranged in regular turn, the transparency conducting layer 140 of upper substrate, colored filter 150 and upper substrate 160.Must it should be noted that in addition coupling electrode C extends to example from one of them of common electrode line, but is not limited thereto, also can all not extend or all extend from common electrode wire from common electrode wire.If embodiment with two common electrode wire in a pixel, and coupling electrode respectively from two common electrode wire wherein one extend to example, then the drive signal waveform of this pixel as shown in figure 11, the sweep trace of display panel is scanning one by one from top to bottom, Vdata is the voltage of the corresponding pixel electrode of data line institute's load, the voltage of coupling electrode C1 and C2 is periodic swinging then, after previous sweep trace Vg (n-1) opens transistor, control electrode and pixel electrode charge according to the Vdata signal by data line simultaneously, after previous sweep trace Vg (n-1) closes, pixel electrode is in (floating) state of floating, when the conversion of signals of coupling electrode C1 and C2, the signal of control electrode CE and pixel electrode PE also can pass through coupling capacitance C _CEWith C _EPAnd change, in this figure, control electrode CE and pixel electrode PE are up drawn voltage by coupling electrode C1, when positive polarity drives (pixel electrode voltage is in fact greater than common electrode voltage), by suitable design coupling capacitance coupling capacitance C _CE(capacitance is bigger) and C _EP(capacitance is less) just can allow the voltage V of control electrode _CEThe amplitude voltage Vp than pixel electrode in fact is big.Therefore, the root mean square of the common electrode voltage difference of control electrode and upper substrate (root mean square) value is different in essence in the root-mean-square value of the voltage difference of pixel electrode and upper substrate common electrode, preferably, the root-mean-square value of the common electrode voltage difference of control electrode and upper substrate is in fact greater than the root-mean-square value of the voltage difference of pixel electrode and upper substrate common electrode.

Can reach the voltage request of control electrode with upper type, yet on panel, what employing was more at present is that line counter-rotating (line inversion), row reverse (column inversion), point reverses (dot inversion) and two-wire point counter-rotating (2 line dot inversion), its function can reduce panel flash (flicker) or crosstalk (cross talk), under a counter-rotating or two-wire point counter-rotating design conditions, there is positive and negative polarity simultaneously in the pixel electrode of same gate line, so in positive polarity, the voltage V of control electrode CE _CEMust be than the voltage Vp height of pixel electrode PE, in negative polarity, the voltage V of control electrode CE _CEMust be lower than the voltage Vp of pixel electrode PE.For instance, the voltage that the upper substrate common electrode is transmitted is about 6V, when pixel drive during at positive half cycle (the about 11.5V of about 6-), is assumed to be about 11.5V, then the voltage V of control electrode CE _CENeed for example to be about 14V approximately greater than 11.5V, when pixel drive when negative half period (the about 6V of about 0.5-), be assumed to be about 0.5V, then the voltage V of control electrode CE _CENeed approximately less than 0.5V, for example be pact-4V.Therefore coupling electrode C1 and the signal demand of C2 signal between positive-negative polarity are different in essence, then preferably need opposite in fact, so, its design is shown in Figure 12 A, in a counter-rotating, electrically being essentially of two coupling electrode C1 and C2 is anti-phase, that is, distinctly receive in the pixel, so the pixel of positive polarity just can be passed through the voltage V of the coupling electrode C1 of positive polarity with control electrode CE _CEUp draw, the pixel of negative polarity just can be passed through the voltage V of the coupling electrode C2 of negative polarity with control electrode CE _CEToward drop-down, coupling electrode C1 and C2 voltage waveform are as shown in figure 11.

The foregoing description is to illustrate with existing five road mask process, but also can be otherwise (as four road mask process, the high aperture technology that adds organic material, colored filter (color filteron array on array; COA), array (array on color filter on colored filter; AOC)) realize this kind design.Must it should be noted that on behalf of colored filter, COA and AOC be formed on the infrabasal plate 100, and not be arranged on the upper substrate 160.In addition, the present invention is that to be located on the upper substrate 160 with colored filter serve as to implement example, but is not limited thereto.

The foregoing description is to be that parallel lines are example with control electrode, but on real the work, the layout patterns of control electrode CE and pixel electrode PE also can change to some extent, shown in Figure 13 A to Figure 13 H, dotted line is depicted as control electrode CE, and dotted region is pixel electrode PE, Figure 13 A to Figure 13 H is that control electrode CE and pixel electrode PE are rectangular in regular turn, control electrode CE is trapezoidal and pixel electrode PE is triangular in shape, control electrode CE and pixel electrode PE are polygon, PE is polygon and control electrode CE is rectangular, the inner edge of pixel electrode PE is outstanding and control electrode CE is rectangular, pixel electrode PE is irregular alignment, pixel electrode PE links rounded and control electrode CE is rounded, pixel electrode PE inner edge links and control electrode CE is rectangular, or other layout, or above-mentioned combination, yet the embodiment of the invention is not as limit.Therefore, the shape of control electrode CE can cooperate/mismatch the shape of pixel electrode PE.In addition, coupling electrode can design/in fact dissimilar pattern similar in fact to control electrode, and be positioned at the control electrode below, to improve aperture opening ratio.Preferably coupling electrode can design the pattern similar in fact to control electrode, but is not limited thereto.

Figure 14 is the sectional view according to the pixel of another embodiment of the present invention, and this embodiment is similar to Figure 10 A, Figure 10 B, but in this embodiment, the passivation layer 120 of control electrode CE top is removed by local, and the voltage V of control electrode CE _CENeed in fact voltage Vp greater than pixel electrode PE; to produce electric field liquid crystal molecule LC is toppled over to correct direction; passivation layer 120 among the figure is mainly at the protective film transistor; prevent that liquid crystal molecule from destroying its characteristic; yet this passivation layer 120 can absorb the component of voltage of some control electrode CE to liquid crystal molecule LC; especially in high aperture technology; this passivation layer is thicker organic material; prevent that data line from influencing the pixel electrode signal; in this process conditions; need the passivation layer 120 of control electrode CE top is removed; so, can reduce the voltage of control electrode CE than the required increase of pixel electrode PE, its section as shown in figure 14; main production method is when making through hole (through hole), and the passivation layer 120 above the control electrode CE is removed.Wherein, the material of passivation layer comprises the combination of inorganic material (as: combination of silicon nitride, monox, silicon oxynitride, silit, class black diamond material or other material or above-mentioned material), organic material (as: combination of photoresistance, poly-propionyl class, polyesters, poly-epoxies, poly-inferior acyl class, polycarbonate-based, polyethers or other material or above-mentioned material) or above-mentioned material.

In the pixel of Fig. 8 A to Fig. 8 E, control electrode CE realizes with second metal level (Metal 2), and make coupling electrode C with the first metal layer (Metal 1), yet other modes also can reach same effect, and Figure 15 A to Figure 15 C is depicted as and utilizes the first metal layer (Metal 1) M1 to make coupling electrode C, and make control electrode CE with transparency conducting layer 130, this sentences a zigzag pixel as synoptic diagram, but is not limited thereto, and its section as shown in figure 16.Shown in Figure 17 A and Figure 17 B respectively for this reason the xsect of the pixel of embodiment in the liquid crystal molecule distribution situation of dark attitude and bright attitude, wherein, coupling electrode C is positioned on the infrabasal plate 100, dielectric layer 110 is covered on the coupling electrode C with passivation layer 120, the transparency conducting layer 130 of control electrode CE and patterning is formed on the passivation layer 120, and control electrode CE is positioned at coupling electrode C top, at the transparency conducting layer 130 (being pixel electrode PE) of patterning and the top of control electrode CE liquid crystal molecule LC is arranged in regular turn, the transparency conducting layer 140 of upper substrate, colored filter 150 and upper substrate 160, drive signal waveform with Figure 11 drives this pixel again, and the root-mean-square value of voltage difference of common electrode that can make control electrode CE and upper substrate 160 is in fact greater than the root-mean-square value of the voltage difference of pixel electrode and upper substrate common electrode.

Except shown in Figure 15 A to Figure 15 C, M1 makes coupling electrode C with the first metal layer (Metal 1), and it extends to example from common electrode wire, but be not limited thereto, can not extend from common electrode wire yet, and make control electrode CE with electrically conducting transparent thing ITO, other modes also can reach same effect, shown in Figure 18 A to Figure 18 C, its with a zigzag pixel as synoptic diagram, but be not limited thereto, and its section as shown in figure 19, wherein, dielectric layer 110 is positioned on the infrabasal plate 100, coupling electrode C is formed on the dielectric layer 110, passivation layer 120 is covered on the coupling electrode C, the transparency conducting layer 130 of control electrode CE and patterning is formed on the passivation layer 120, and control electrode CE is positioned at coupling electrode C top, at the transparency conducting layer 130 (being pixel electrode PE) of patterning and the top of control electrode CE liquid crystal molecule LC is arranged in regular turn, the transparency conducting layer 140 of upper substrate, colored filter 150 and upper substrate 160, drive signal waveform with Figure 11 drives this pixel again, and the root-mean-square value of voltage difference of common electrode that can make control electrode and upper substrate is in fact greater than the root-mean-square value of the voltage difference of pixel electrode and upper substrate common electrode.

In Figure 12 A to Figure 12 E, two coupling electrodes of C1 and C2 are arranged in the same pixel, and each bar coupling electrode extend from common electrode wire wherein one be example, preferably receive the coupled voltages signal that is different in essence respectively, to reach a type of drive of counter-rotating (dot inversion), but be not limited thereto, also can receive identical in fact coupled voltages signal respectively.Figure 20 A is for forming storage capacitors, shown in the choosing that dotted line encloses of Figure 20 A between two common electrode wire and the pixel electrode.Wherein, this described coupling electrode C be extend to common electrode wire wherein one for example, but be not limited thereto.Be respectively the sectional view and the equivalent circuit diagram of the pixel of Figure 20 A shown in Figure 20 B and Figure 20 C, by designing suitable storage capacitors C _ST1With C _ST2Just may command coupling electrode C is coupled to the voltage of pixel electrode PE, so can control the magnitude of voltage of pixel electrode PE, with this design, the deviser can arbitrarily design the voltage difference of control electrode CE and pixel electrode PE, and avoids the controlled electrode CE of current potential of pixel electrode to influence and the change current potential.

In the circuit diagram of Figure 20 C, control electrode V _CE, pixel electrode Vp and common electrode relation as follows:

V _CE(RMS)＝Vp+Δ _VCE(RMS)

Vp′＝Vp+ΔVp _(RMS)

${\mathrm{\&Delta;<figure-callout\; id="1"\; label="V\; C"\; filenames="C200710153266E00321.png,C200710153266E00391.png"\; state="\{\{state\}\}">V</figure-callout>}}_C=\frac{V_{C1\left(\max \right)}-V_{C1\left(\min \right)}}{2}$

${\mathrm{\&Delta;V}}_{\mathrm{CE}\left(\mathrm{RMS}\right)}=\frac{{\mathrm{\&Delta;V}}_{p\left(\mathrm{RMS}\right)}\&times;C_{\mathrm{EP}}+{\mathrm{\&Delta;<figure-callout\; id="1"\; label="V\; C"\; filenames="C200710153266E00321.png,C200710153266E00391.png"\; state="\{\{state\}\}">V</figure-callout>}}_C\&times;C_{\mathrm{CE}}}{C_{\mathrm{CE}}+C_{\mathrm{LC}\left(\mathrm{CE}\right)}+(C_{\mathrm{EP}}//C_{\mathrm{LC}}+{\mathrm{<figure-callout\; id="1"\; label="C\; ST"\; filenames="C200710153266E00321.png,C200710153266E00391.png"\; state="\{\{state\}\}">C</figure-callout>}}_{\mathrm{ST}}+C_{\mathrm{ST}2})}$

${\mathrm{\&Delta;V}}_{p\left(\mathrm{RMS}\right)}=\frac{{\mathrm{\&Delta;<figure-callout\; id="1"\; label="V\; C"\; filenames="C200710153266E00321.png,C200710153266E00391.png"\; state="\{\{state\}\}">V</figure-callout>}}_C\&times;(C_{\mathrm{ST}1}-C_{\mathrm{ST}2})+{\mathrm{\&Delta;V}}_{\mathrm{CE}}\&times;C_{\mathrm{EP}}}{C_{\mathrm{LC}}+{\mathrm{<figure-callout\; id="1"\; label="C\; ST"\; filenames="C200710153266E00321.png,C200710153266E00391.png"\; state="\{\{state\}\}">C</figure-callout>}}_{\mathrm{ST}}+{\mathrm{<figure-callout\; id="2"\; label="C\; ST"\; filenames="C200710153266E00611.png,C200710153266E00631.png"\; state="\{\{state\}\}">C</figure-callout>}}_{\mathrm{ST}}+(C_{\mathrm{EP}}//(C_{\mathrm{CE}}+C_{\mathrm{LC}\left(\mathrm{CE}\right)})}$

Suppose liquid crystal capacitance C _{LC_min}Be about 0.15pF, coupling capacitance C _EPBe about 0.15pF, C _CEBe about 0.5pF, C _{LC (CE)}Be about 0.15pF, storage capacitors Cst1 is about 0.1pF, Cst2 is about 0.02pF, Δ Vc1 is about 5V, then the relation of Δ Vp (rms), Δ VCE (rms) and operating voltage is shown in Figure 21 A and Figure 21 B, control electrode is no matter under any driving voltage, all can stably be higher than more than the pixel electrode 3V, so can allow pixel have voltage to make liquid crystal produce tilt angle in dark attitude, increase reaction velocity, when bright attitude, the electric field of its control electrode can allow liquid crystal topple over to correct direction, promotes the degree of stability of panel.

Must it should be noted that the described coupling electrode of the foregoing description, if when common electrode wire is extended, then the signal that transmitted of its coupling electrode c also is same as the signal that common electrode wire is transmitted in fact, Figure 15 A to Figure 15 C for example, but be limited to this.If coupling electrode is from wherein one when extending of common electrode wire, then the signal that transmitted of its coupling electrode c also is same as common electrode wire wherein signal that is transmitted such as Fig. 8 A to Fig. 8 E, Figure 12 A to Figure 12 E, Figure 20 A to Figure 20 in fact, but is limited to this.That is to say the identical in fact or signal that is different in essence and transmitted of the signal alternative that common electrode wire wherein (being also referred to as first common electrode wire) is transmitted in common electrode wire other (being also referred to as second common electrode wire).Preferably, the signal that first common electrode wire is transmitted and second common electrode wire are anti-phase in fact, but are not limited thereto.In other words, if coupling electrode is when wherein one of common electrode wire (i.e. first common electrode wire) extension and signal that it transmitted are different in essence or be same as the signal that other one of common electrode wire (i.e. second common electrode wire) transmitted in fact, then the signal that coupling electrode transmitted is different in essence or is same as the signal that other one of common electrode wire (i.e. second common electrode wire) is transmitted in fact.Therefore, voltage or signal that this moment, first common electrode was transmitted also can be referred to as first coupled voltages, and voltage that second common electrode is transmitted or signal also can be referred to as second coupled voltages.In addition, embodiments of the invention are to serve as to implement example with one, two common electrode wire, also can be according to designing requirement increasing or to reduce the number of common electrode wire, as: 0 (number that coupling electrode is promptly only arranged), one, two, three, four, five, six, seven, eight etc.

Moreover the material of the described control electrode of the above embodiment of the present invention is same as one of them of material of the material of material, data line of sweep trace and this pixel electrode in fact.

Shown in Figure 22 is display element 200, and it comprises disclosed dot structure 210, and this display element 200 can be LCD (LCD), active display (electroluminescent device; ELD), Field Emission Display (field emission device; FED) or suchlike display element.

Shown in Figure 23 is electronic component 300, and it comprises display element 200 as shown in figure 22, and this electronic component can be notebook computer (notebook; NB), TV (television; TV), monitor (monitor), digital instrument dash board (digital billboard), mobile model device (as phone, wrist-watch, digital camera, digital album (digital photo frame), personal digital assistant (PDA), digital code camera, digital image player, game machine), indoor/outdoor billboard or suchlike device.

Claims (38)

1. a dot structure is arranged on first substrate, and is electrically connected at least one sweep trace and at least one data line, and this dot structure comprises:

First switching device is electrically connected at this sweep trace and this data line;

Second switching device is electrically connected at this sweep trace and this data line;

At least one pixel electrode is electrically connected at this second switching device;

At least one control electrode is electrically connected at this first switching device; And

At least one coupling electrode is positioned at the partly below of this control electrode.

2. dot structure as claimed in claim 1 wherein, has at least one coupling condenser between this coupling electrode of part and this part control electrode.

3. dot structure as claimed in claim 1 wherein, has at least one control capacitor between this control electrode of part and this pixel electrode of part.

4. dot structure as claimed in claim 1 also comprises at least one first common electrode wire, is positioned at the below of this pixel electrode of part.

5. dot structure as claimed in claim 4 wherein has the first common capacitor between this pixel electrode of part and this common electrode wire of part.

6. dot structure as claimed in claim 1, wherein this first switching device comprises transistor, this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this control electrode.

7. dot structure as claimed in claim 1, wherein this second switching device comprises transistor, this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this pixel electrode.

8. dot structure as claimed in claim 1 comprise that also correspondence is arranged at second substrate of this first substrate, and this second substrate has common electrode.

9. dot structure as claimed in claim 8 wherein, has at least one first capacitor between this common electrode of this second substrate and this pixel electrode of part.

10. dot structure as claimed in claim 9 wherein, has at least one second capacitor between this common electrode of this second substrate and this control electrode of part.

11. dot structure as claimed in claim 4 also comprises at least one second common electrode wire, is positioned at the below of this pixel electrode of part.

12. dot structure as claimed in claim 11 wherein, between this first common electrode wire, this second common electrode and this pixel electrode of part, has at least one first common capacitor and at least one second common capacitor respectively.

13. dot structure as claimed in claim 11 wherein, puts on the signal of this first common electrode wire and the signal of this second common electrode wire, is different in essence.

14. dot structure as claimed in claim 11, wherein, the signal that puts on the signal of this first common electrode wire and this second common electrode wire is identical in fact.

15. dot structure as claimed in claim 11 wherein, puts on the signal of this second common electrode wire and the signal of this coupling electrode and is different in essence.

16. dot structure as claimed in claim 13, wherein, this signal of this first common electrode wire and this signal of this second common electrode wire are essentially anti-phase.

17. dot structure as claimed in claim 8, wherein, the voltage difference absolute value of this control electrode and this common electrode is different in essence in the voltage difference absolute value of this pixel electrode and this common electrode.

18. dot structure as claimed in claim 8, wherein, the voltage difference absolute value of this control electrode and this common electrode is in fact greater than the voltage difference absolute value of this pixel electrode and this common electrode.

19. dot structure as claimed in claim 1, wherein, the material of this control electrode is same as one of them of material of the material of this data line and this pixel electrode in fact.

20. dot structure as claimed in claim 1, wherein, the material of this coupling electrode is same as one of them of material of the material of this sweep trace and this data line in fact.

21. a display element comprises dot structure as claimed in claim 1.

22. an electronic component comprises display element as claimed in claim 21.

23. the formation method of a dot structure, this dot structure is formed on first substrate, and is electrically connected at least one sweep trace and at least one data line, and this method comprises:

Form first switching device in this dot structure, and be electrically connected at this sweep trace and this data line;

Form second switching device in this dot structure, and be electrically connected at this sweep trace and this data line;

Form at least pixel electrode in this dot structure, and be electrically connected at this second switching device;

Form at least one control electrode in this dot structure, and be electrically connected at this first switching device; And

Form the below of at least one coupling electrode in this control electrode of part.

24. method as claimed in claim 23 also comprises, forms the below of at least one first common electrode line in this pixel electrode of part.

25. method as claimed in claim 24 also comprises, forms the below of at least one second common electrode line in this pixel electrode of part.

26. method as claimed in claim 25 wherein, puts on the signal of this first common electrode wire and the signal of this second common electrode wire and is different in essence.

27. method as claimed in claim 25, wherein, the signal that puts on the signal of this first common electrode wire and this second common electrode wire is identical in fact.

28. method as claimed in claim 25 wherein, puts on the signal of this second common electrode wire and the signal of this coupling electrode and is different in essence.

29. method as claimed in claim 26, wherein, this signal of this first common electrode wire and this signal of this second common electrode wire are essentially anti-phase.

30. method as claimed in claim 23, wherein, the material of this control electrode is same as one of them of material of the material of this data line and this pixel electrode in fact.

31. method as claimed in claim 23, wherein, the material of this coupling electrode is same as one of them of material of the material of this sweep trace and this data line in fact.

32. method as claimed in claim 23, wherein this first switching device comprises transistor, and this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this control electrode.

33. method as claimed in claim 23, wherein this second switching device comprises transistor, and this transistor has the grid that is coupled to this sweep trace, be coupled to the source electrode of this data line and be coupled to the drain electrode of this pixel electrode.

34. the driving method of a dot structure, this dot structure is arranged on first substrate, and be electrically connected at least one sweep trace and at least one data line, and it has first switching device, second switching device, at least one pixel electrode, at least one control electrode and at least one coupling electrode, comprising:

Provide voltage corresponding to video data to pixel electrode and this control electrode, make this pixel electrode and this control electrode be in floating state;

Provide coupled voltages to this coupling electrode; And

The variable quantity of this coupled voltages is coupled to this control electrode by at least one coupling capacitance, make the voltage difference of this control electrode and common electrode in fact greater than the voltage difference of this pixel electrode and this common electrode, wherein this common electrode is positioned on second substrate, and corresponding to this first substrate.

35. driving method as claimed in claim 34 also comprises:

The end of first coupled voltages to first storage capacitors is provided, and by this first storage capacitors the variable quantity of this first coupled voltages is coupled to this pixel electrode, wherein the other end of this first storage capacitors is coupled to this pixel electrode; And;

The end of second coupled voltages to second storage capacitors is provided, and by this second storage capacitors the variable quantity of this second coupled voltages is coupled to this pixel electrode, wherein the other end of this second storage capacitors is coupled to this pixel electrode.

36. driving method as claimed in claim 35, wherein, this first coupled voltages and this second coupled voltages signal are different in essence.

37. driving method as claimed in claim 35, wherein, this first coupled voltages is identical in fact with this second coupled voltages signal.

38. driving method as claimed in claim 35, wherein, this first coupled voltages and this second coupled voltages signal are essentially anti-phase.

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