CN100480683C - Novel method for detecting high-order critical point of semiconductor energy band structure - Google Patents
Novel method for detecting high-order critical point of semiconductor energy band structure Download PDFInfo
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- CN100480683C CN100480683C CNB2005101307696A CN200510130769A CN100480683C CN 100480683 C CN100480683 C CN 100480683C CN B2005101307696 A CNB2005101307696 A CN B2005101307696A CN 200510130769 A CN200510130769 A CN 200510130769A CN 100480683 C CN100480683 C CN 100480683C
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Abstract
The method for detecting semi conducting material band structure with high level critical point starts from electron mixing on the semi conductor material or in the sample growing process, forming semi insulation ternary alloy, using microscope photoluminencence instrument mixed semi conductor material low temperature photoluminescence, eliminating optical spectrum signal to affect mixed semiconductor material, combining the changing laser wavelength and lighting strength and resonance diffusion, deciding the high level critical point of the semiconductor material.
Description
Technical field
The present invention relates to the method for testing and the optical semiconductor spectral technology field of semiconductor material band structure and physical-property parameter, the spectrum test method of particularly semi-insulated equalized electron adulterated semiconductor high-order critical point.
Background technology
Determining of semiconductor energy gap structural parameters is an important research direction of semiconductor material research, and it is significant in the application aspect the semiconductor devices for the physical property and the semiconductor material of research semiconductor material.The more structural critical points of semiconductor energy gap are definite extremely important to the semiconductor band structure, such as energy gap E
0 and higher some of energy high price critical point E1 and E2 etc.
In recent decades, people have delivered various modulated spectrum methods.Play an important role in the modulation spectral measurement of reflectance spectrum more than absorption edge, that is in the semiconductor energy gap structural research more than the extreme value of low-energy zone important effect is arranged.But the modulated spectrum method also is subjected to some restrictions when the band structure of studying some semiconductor materials and optical property.For example, in the band structure about the GaAsN material, more than the relevant critical point E0+Delta0 of absorption edge E0 and spin-track splitting of GaAsN, the modulation reflectance spectrum is also found a new peak E+ recently.The theoretical prophesy of band crossing, when the content of nitrogen in the GaAsN material less than 0.2% the time, the energy of E+ energy level is put subcritical the energy of E0+Delta0.Although the modulation reflectance spectrum has very high sensitivity in the critical point of measurement band structure,, all modulation reflectance spectrums all do not measure GaAsN material nitrogen content to be lower than 0.2% E+ energy level at present.One of reason, the energy that is exactly the E+ of these materials and E0+Delta0 is very approaching, and the so approaching energy level of this explanation modulation reflectance spectrum explanation energy has certain difficulty.Another reason is exactly that the GaAsN material often is grown on the GaAs substrate, and the modulation reflectance spectrum is except detecting the E0+Delta of GaAsN material
Outside 0 energy level, can also detect the modulation reflectance spectrum of the very strong E0+Delta0 energy level of GaAs substrate.The signal that the GaAs substrate is very strong will have a strong impact on the detection of GaAsN epitaxial film materials E0+Delta0 energy level.The modulation reflectance spectrum has certain ubiquity in the problem that the critical point of GaAsN material band structure is run into aspect determining.
How to seek a kind of effective measuring technology, reduce the influence of substrate to epitaxial loayer band structure critical point energy test, have simultaneously very high energy resolution again with each very approaching critical point of explanation energy, extremely important to the physical property and the device application of research epitaxial semiconductor material.
Summary of the invention
The objective of the invention is to explore the method for a kind of GaAsN of detection semiconductor alloy material band structure high-order critical point.This method can be avoided the interference of substrate signal to the semiconductor epitaxial layers signal, has very high energy resolution again with each very approaching critical point of explanation energy, and easy to operate feasible.
A kind of method of surveying the critical point of GaAsN semiconductor alloy material band structure high-order of the present invention is characterized in that, comprises the steps:
Step 1: growing semi-insulated semiconductor material on backing material, perhaps in the sample grown process, semiconductor material is carried out equalized electron adulteratedly, form semi-insulated binary or ternary-alloy material;
Step 2: the cryo-microscope photoluminescence spectra of the semiconductor material after utilizing the microspectrofluorimeter test equalized electron adulterated, this probe temperature are liquid nitrogen temperature or are 77K;
Step 3: the spectral signal that utilizes different wave length that different this physical property of penetration depth of semiconductor material is eliminated to derive from substrate is to the influence of the equalized electron adulterated semiconductor material spectral signal of epitaxial loayer, simultaneously, utilize the different excitation wavelength dependence of each critical point spectrum that they are further pointed out;
Step 4: on the basis of micro-photoluminescence spectra,, determine the high-order critical point of semiconductor material in conjunction with becoming excitation wavelength and becoming excitating light strength and resonance Raman scattering means.
Wherein microspectrofluorimeter is equipped with 50 double-length operating distance object lens, so that improve the excitation light power density that incides sample surfaces and carry out the measurement of low-temperature photoluminescence spectra.
Description of drawings
Below in conjunction with accompanying drawing, by detailed description technical scheme of the present invention is described further instantiation, wherein:
Fig. 1 is the modulated spectrum that utilizes the different low N content GaAsN semiconductor alloy materials of MOCVD equipment growth to be surveyed at normal temperatures on the p type GaAs substrate.
Fig. 2 utilizes the difference of MBE equipment growth to hang down the micro-photoluminescence spectra that N content GaAsN semiconductor alloy material is surveyed under the 77K temperature on the Semi-insulating GaAs substrate.
Fig. 3 is that low N content is that 0.1% and 0.22% the change of GaAsN semiconductor alloy material under the 77K temperature excites micro-photoluminescence spectra.
Embodiment
A kind of method of surveying the critical point of GaAsN semiconductor alloy material band structure high-order of the present invention is characterized in that, comprises the steps:
Step 1: growing semi-insulated semiconductor material on backing material, perhaps in the sample grown process, semiconductor material is carried out equalized electron adulteratedly, form semi-insulated binary or ternary-alloy material, the probe temperature of this sample is below the normal temperature;
Step 2: the cryo-microscope photoluminescence spectra of the semiconductor material after utilizing the microspectrofluorimeter test equalized electron adulterated; This microspectrofluorimeter is equipped with the long reach high power objective, so that improve the excitation light power density that incides sample surfaces and carry out the measurement of low-temperature photoluminescence spectra
Step 3: the spectral signal that utilizes different wave length that different this physical property of penetration depth of semiconductor material is eliminated to derive from substrate is to the influence of the equalized electron adulterated semiconductor material spectral signal of epitaxial loayer, simultaneously, utilize the different excitation wavelength dependence of each critical point spectrum that they are further pointed out;
Step 4: on the basis of micro-photoluminescence spectra,, determine the high-order critical point of semiconductor material in conjunction with becoming excitation wavelength and becoming excitating light strength and resonance Raman scattering means.
Describe in detail
The mensuration of physical parameter such as high-order critical point has very important significance to the physical property of understanding semiconductor material and the application aspect the semiconductor devices of expansion semiconductor material in the semiconductor energy band structure.The modulated spectrum method has been widely used in the detection of high-order critical point energy in the semiconductor energy band structure, but, still run into certain difficulty to being grown in the context of detection of semiconductive thin film on the semi-insulating substrate and some low component ternary alloy three-partalloy critical point energy.Fig. 1 is the modulated spectrum that utilizes the different low N content GaAsN semiconductor alloy materials of MOCVD equipment growth to be surveyed at normal temperatures on the p type GaAs substrate.When the component of N greater than 0.8% the time, between 1.6-1.8eV, can clearly offer an explanation out two modulation reflection peaks, and do not pointed out the optical transition with the relevant critical point of E0+Delta0 into E+.But when the N component is lower, can not offer an explanation to such an extent as to the energy level of these two critical points is too close.Offer an explanation these signals, must explore new method of testing.
Because the photoluminescence signal is very easy to collect, and can make full use of the experimental technique relevant with photoluminescence, as resonance raman, become excitating light strength excite with different wave length to the different penetration depth of semiconductor material etc., we have invented and have utilized cryo-microscope photoluminescence technology to survey this method of GaAsN semiconductor alloy material band structure high-order critical point.
At first utilize molecular beam epitaxial device MBE on the Semi-insulating GaAs substrate, to carry out the equalized electron adulterated of N, the GaAsN semiconductor alloy material of a series of low N content of having grown, component from 0.0% to 1.1%.In order fully to collect the photoluminescence signal, we have set up a cover test macro, comprise the sample chamber of liquid nitrogen temperature, micro-colimated light system, 50 double-length operating distance object lens, monochromatic light grating spectrograph, the ccd detector of liquid nitrogen refrigerating and the used computing machine of control spectrometer.We as excitation laser, have measured the micro-photoluminescence spectra of series of samples, as shown in Figure 2 with the solid-state laser of the He-Ne laser instrument of 633nm and 593nm.The fluorescence signal of following "+" mark of 1.6eV is the band edge fluorescence peak of GaAsN material among the figure, and the fluorescence peak of " * " mark has reflected the energy of critical point E0+Delta0, and the fluorescence peak of " ↓ " mark has reflected the energy of critical point E+ in addition.More clearly to have provided the N component be the fluorescence peak of the GaAsN material E+ energy level more than 0.36% to the fluorescence signal of 593nm laser excitation in illustration.Utilize our detection system and method, the energy of having measured the E0+Delta0 critical point when 77K of GaAs material exactly is 1.853eV, and is with additive method, very identical as the numerical value that the modulated spectrum method is measured.It is highly important that we have also detected the E+ that the N component only is 0.1% GaAsN material and the energy of E0+Delta0 critical point.
Utilize this method, we also measured 671,633,593 and the N component of laser excitation such as 488nm be the micro-photoluminescence spectra of 0.1% and 0.22% GaAsN semiconductor alloy material, as shown in Figure 3.As can be seen because the most close E0+Delta0 critical point of 671nm laser energy, with 671nm excited fluorescent peak mainly corresponding to the E0+Delta0 critical point of material, and E
The 0+Delta0 critical point when high-energy excites signal very a little less than, so the fluorescence peak of 488nm laser excitation is corresponding to the E+ critical point of material.The photoluminescence spectrum of 633nm and 593nm laser excitation then is the stack of E0+Delta0 and E+ fluorescence signal.Like this, utilize the E0+Delta0 exciting light dependence different, can further point out the physics root of these fluorescence peaks with E+.
Because having different absorption coefficients to different exciting lights, the semiconductor material of certain band gap make different wavelength of laser have different penetration depths to material.The influence of substrate signal to the epitaxial loayer semiconductor material just can be avoided in the photoluminescence peak of the high-order critical point of the exciting light test epitaxial material by selecting different wave length.
Some sharp-pointed spectral signals are Raman signals of GaAsN semiconductor alloy material among Fig. 2.When the fluorescence peak of " ↓ " mark during very near exciting light, the phonon mould on some borders, Brillouin zone is arrived by the Raman signal resonant probe, and this is typically with the relevant resonance raman phenomenon of E+ energy level.Source resonance raman phenomenon has affirmed further that then the fluorescence peak of " ↓ " mark derives from energy level E+.
Claims (2)
1. a method of surveying the critical point of GaAsN semiconductor alloy material band structure high-order is characterized in that, comprises the steps:
Step 1: growing semi-insulated semiconductor material on backing material, perhaps in the sample grown process, semiconductor material is carried out equalized electron adulteratedly, form semi-insulated binary or ternary-alloy material;
Step 2: the cryo-microscope photoluminescence spectra of the semiconductor material after utilizing the microspectrofluorimeter test equalized electron adulterated, this probe temperature are liquid nitrogen temperature or are 77K;
Step 3: the spectral signal that utilizes different wave length that different this physical property of penetration depth of semiconductor material is eliminated to derive from substrate is to the influence of the equalized electron adulterated semiconductor material spectral signal of epitaxial loayer, simultaneously, utilize the different excitation wavelength dependence of each critical point spectrum that they are further pointed out;
Step 4: on the basis of micro-photoluminescence spectra,, determine the high-order critical point of semiconductor material in conjunction with becoming excitation wavelength and becoming excitating light strength and resonance Raman scattering means.
2. the method for detection GaAsN semiconductor alloy material band structure high-order according to claim 1 critical point, it is characterized in that, wherein microspectrofluorimeter is equipped with 50 double-length operating distance object lens, so that improve the excitation light power density that incides sample surfaces and carry out the measurement of low-temperature photoluminescence spectra.
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Citations (3)
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|---|---|---|---|---|
| DE19840197A1 (en) * | 1998-09-03 | 2000-03-09 | Wacker Siltronic Halbleitermat | Method to identify and characterize crystal defects in monocrystalline semiconductor material; involves testing sample of monocrystalline semiconductor material using micro-Raman spectroscopy |
| CN1423113A (en) * | 2001-12-05 | 2003-06-11 | 财团法人工业技术研究院 | Spectral measuring apparatus for infrared spectrum, Raman spectrum and fluorescence spectrum |
| WO2004090516A1 (en) * | 2003-04-09 | 2004-10-21 | Aoti Operating Company, Inc. | Detection method and apparatus metal particulates on semiconductors |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19840197A1 (en) * | 1998-09-03 | 2000-03-09 | Wacker Siltronic Halbleitermat | Method to identify and characterize crystal defects in monocrystalline semiconductor material; involves testing sample of monocrystalline semiconductor material using micro-Raman spectroscopy |
| CN1423113A (en) * | 2001-12-05 | 2003-06-11 | 财团法人工业技术研究院 | Spectral measuring apparatus for infrared spectrum, Raman spectrum and fluorescence spectrum |
| WO2004090516A1 (en) * | 2003-04-09 | 2004-10-21 | Aoti Operating Company, Inc. | Detection method and apparatus metal particulates on semiconductors |
Non-Patent Citations (3)
| Title |
|---|
| InAs/GaAs自组织生长量子点结构中浸润层光致发光研究. 吕振东，徐仲英，郑宝真，许继宗，王玉琦，王建农，葛惟锟.半导体学报，第18卷第8期. 1997 * |
| Optical Properties of GaNAs and GaAsSb Semiconductors. LUO，Xiang-Dong，XU，Zhong-Ying.中国科学院研究生院学报，第22卷第5期. 2005 * |
| 用电调制反射光谱的方法确定能带中临界点的位置. 孙长河，张丽云，刘晓敏，贾刚.物理实验，第7卷第5期. 1987 * |
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