CN100475927C - Chemical mechanical grinder of semiconductor chips and formulation thereof - Google Patents
Chemical mechanical grinder of semiconductor chips and formulation thereof Download PDFInfo
- Publication number
- CN100475927C CN100475927C CNB2004100175799A CN200410017579A CN100475927C CN 100475927 C CN100475927 C CN 100475927C CN B2004100175799 A CNB2004100175799 A CN B2004100175799A CN 200410017579 A CN200410017579 A CN 200410017579A CN 100475927 C CN100475927 C CN 100475927C
- Authority
- CN
- China
- Prior art keywords
- oxygenant
- concentration range
- polishing particles
- additive
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000203 mixture Substances 0.000 title claims abstract description 22
- 239000000126 substance Substances 0.000 title description 6
- 238000009472 formulation Methods 0.000 title 1
- 239000002245 particle Substances 0.000 claims abstract description 47
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims description 35
- 239000000654 additive Substances 0.000 claims description 23
- 230000000996 additive effect Effects 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 150000002148 esters Chemical class 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 10
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- -1 hexyl amines Chemical class 0.000 claims description 8
- 230000003020 moisturizing effect Effects 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229960001866 silicon dioxide Drugs 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical group [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000004584 polyacrylic acid Substances 0.000 claims description 5
- 239000011163 secondary particle Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 150000003016 phosphoric acids Chemical class 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 abstract description 8
- 230000001590 oxidative effect Effects 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 239000003381 stabilizer Substances 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 description 21
- 239000010937 tungsten Substances 0.000 description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 9
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000013543 active substance Substances 0.000 description 3
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 3
- 239000001230 potassium iodate Substances 0.000 description 3
- 235000006666 potassium iodate Nutrition 0.000 description 3
- 229940093930 potassium iodate Drugs 0.000 description 3
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 101710171243 Peroxidase 10 Proteins 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 229940093916 potassium phosphate Drugs 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 235000015281 sodium iodate Nutrition 0.000 description 1
- 239000011697 sodium iodate Substances 0.000 description 1
- 229940032753 sodium iodate Drugs 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229940001516 sodium nitrate Drugs 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Abstract
The invention provided a process to product a semiconductor chip chemo-mechanical lapping agent. The composition is: lapping particle 0.01-20%, first oxidant 0.01-50%, second oxidant 0.001-50%; stabilizer 0.1-5%, addition agent 0.01-10%, water the residue. The process includes three forms: first to mix all the composition, second is the bi-component: the second oxidant is a component and the other is a component; the third is: first oxidant as a component, second oxidant as a component, the other is a component. The product can decrease the rut and the dissipation of the mediator, the silicon dice has the best surface smoothness after lapping.
Description
Technical field
The present invention relates to a kind of chemical composition and compound method thereof, relate in particular to a kind of agent of semi-conductor chip cmp and compound method thereof that in semi-conductor chip processing and manufacturing process, is used to remove the tungsten that adheres on the chip.
Background technology
In the processing and manufacturing process of semi-conductor chip, along with adopting the progressively universal of embedded (damascene) operation (a kind of appropriate litigation fees is cheap and can set up the operation of more intensive component structure on silicon), plain conductor in the chip is carried out cmp (CMP, chemical mechanical planarization) polishing also become essential.Tungsten is widely used in the technological process of semi-conductor chip processing and manufacturing with its fabulous filling properties to through hole and groove, low electronic migration and resistance and excellent erosion resistance.As hard contact, through hole lead and inter-level interconnects line etc.Traditionally, the method etching that tungsten can using plasma is called tungsten and eat-backs (WEB, tungsten etch back).But, to eat-back be that a kind of cost is high and can cause the technology of polluting than overall situation to tungsten.In contrast, the CMP technology of tungsten, far better aspect cost and environmental protection two.The particularly important is, adopt the tungsten finishing method of CMP, help to improve the distribution density of embedded operation, and then obtain higher chip performance chip.Therefore, in semiconductor manufacturing industry, tungsten CMP becomes a kind of technology that is widely used rapidly.
Since the last century the nineties, tungsten CMP used considerable different types of cmp agent.As first-generation cmp agent, based on the s-generation cmp agent of Potassium Iodate oxygenant and alumina lap particle and based on third generation cmp agent of hydrogen peroxide oxidant and silicon-dioxide polishing particles etc. based on iron nitrate oxygenant and alumina lap particle.Consider that from the CMP complete processing aspect of improving tungsten the agent of ideal cmp should have: tungsten remove speed height, medium remove speed is very low, tungsten is surperficial dish-like depression and all atomic to the corrosion of medium layer, grind characteristic such as the fabulous and ratio of performance to price height of back silicon chip surface smooth finish.With respect to the first-generation, although done very big improvement at aspect of performance, still there is following problem in the chemical mechanical polishing of tungsten agent of commercial distribution at present: it is relatively low that tungsten is removed speed, and it is too high that medium is removed speed, dish-like pit and corrodibility are big, and the price comparison costliness etc.Along with chip manufacturing process turns to littler size (less than 0.25 micron), these shortcomings of chemical mechanical polishing of tungsten agent will seem more outstanding.
Summary of the invention
Purpose of the present invention is to provide a kind of worn speed height, medium selectivity of tungsten good, grinds fabulous agent of semi-conductor chip cmp and the compound method thereof of back silicon chip surface smooth finish.
To achieve these goals, the present invention has adopted following technical scheme: the agent of a kind of semi-conductor chip cmp, formulated by appended weight percent by following material:
Polishing particles: 0.01-20%;
First oxygenant: 0.01-50%;
Second oxygenant: 0.001-50%;
Stablizer: 0.1-5%;
Additive: 0.01-10%;
Water: surplus.
Described water is deionized water; Described polishing particles is one or more the mixture in silicon-dioxide, aluminum oxide, zirconium white, silicon carbide, cerium dioxide, the manganese oxide; Described first oxygenant is a pyrophosphate salt; Described second oxygenant is one or more the mixture in iodate, hydrogen peroxide, azanol or the nitrate; Described stablizer is one or more the mixture in phosphoric acid salt, phosphoric acid, vinylformic acid, polyacrylic acid or the tensio-active agent; Described additive is one or more the mixture in tetramethylphosphonihydroxide hydroxide base amine and its esters, hydroxide four hexyl amines and its esters, carboxylic acid and its esters.
The particle size range of described polishing particles secondary particle is 20-400nm, and preferable range is 50-200nm, and most preferred range is 100-150nm; The B.E.T specific surface area of primary partical is 20m
2/ g-400m
2/ g, preferable range is 50m
2/ g-200m
2/ g, most preferred range is 100m
2/ g-150m
2/ g.
The preferred concentration range for of described polishing particles is: 0.1-10%; The preferred concentration range for of first oxygenant is: 0.1-10%; The preferred concentration range for of second oxygenant is: 0.01-10%; The preferred concentration range for of additive is: 0.05-10%.
The most preferable concentrations scope of described polishing particles is: 4-7%; The most preferable concentrations scope of first oxygenant is: 1-5%; The most preferable concentrations scope of second oxygenant is: 0.05-5%; The most preferable concentrations scope of additive is: 0.1-5%.
The compound method of a kind of semi-conductor chip cmp agent is, taking off the row material prepares burden by appended weight percent: polishing particles 0.01-20%, the first oxygenant 0.01-50%, the second oxygenant 0.001-50%, stablizer 0.1-5%, additive 0.01-10%, moisturizing to 100%, use by following three kinds of forms preparation:
1): polishing particles, stablizer, first oxygenant, second oxygenant, additive and the deionized water of dosage are mixed the single component form in the container that is placed on;
2): polishing particles, stablizer, first oxygenant, additive and the deionized water mixing of dosage are placed in the container as first component, second oxygenant of dosage is placed in the container as the two-pack form of second component, during use above-mentioned two components is accurately mixed by stoichiometry;
3): polishing particles, stablizer, additive and the deionized water mixing of dosage are placed in the container as first component, first oxygenant of dosage is placed in the container as second component, second oxygenant of dosage is placed in the container as three component forms of the 3rd component, during use above-mentioned three components is accurately mixed by stoichiometry.
Described polishing particles is one or more the mixture in silicon-dioxide, aluminum oxide, zirconium white, silicon carbide, cerium dioxide, the manganese oxide; Described first oxygenant is a pyrophosphate salt, and second oxygenant is one or more the mixture in iodate, hydrogen peroxide, azanol or the nitrate; Described stablizer is one or more the mixture in phosphoric acid salt, phosphoric acid, vinylformic acid, polyacrylic acid or the tensio-active agent; Described additive is one or more the mixture in tetramethylphosphonihydroxide hydroxide base amine and its esters, hydroxide four hexyl amines and its esters, carboxylic acid and its esters.
The particle size range of described polishing particles secondary particle is 20-400nm, and preferable range is 50-200nm, and most preferred range is 100-150nm; The B.E.T specific surface area of primary partical is 20m
2/ g-400m
2/ g, preferable range is 50m
2/ g-200m
2/ g, most preferred range is 100m
2/ g-150m
2/ g.
The preferred concentration range for of described polishing particles is: 0.1-10%; The preferred concentration range for of first oxygenant is: 0.1-10%; The preferred concentration range for of second oxygenant is: 0.01-10%; The preferred concentration range for of additive is: 0.05-10%.
The most preferable concentrations scope of described polishing particles is: 4-7%; The most preferable concentrations scope of first oxygenant is: 1-5%; The most preferable concentrations scope of second oxygenant is: 0.05-5%; The most preferable concentrations scope of additive is: 0.1-5%.
Semi-conductor chip cmp of the present invention agent has following characteristics and advantage:
1, owing to used by potassium pyrophosphate and the multiple oxygenant formed such as co-oxidants such as Potassium Iodate, hydrogen peroxide, azanols, it is very appropriate to make tungsten layer be transformed into the thickness of tungsten oxide layer, can just be removed fully by the mechanical grinding effect of polishing particles, but be unlikely to the further oxidation that hinders tungsten because of too thick.Even overdraft when obviously having reduced with grinding and relative linear velocity size as the mechanical grinding power that intensity characterizes, still can keep high tungsten to remove speed.Because reduced the action intensity of mechanical force relatively, the problems such as loss of pit, corrosion and medium layer have also reduced.
2, owing to used such as the such additive of unsaturated carboxylic acid the unstable that can avoid pyrophosphate salt in strong well-oxygenated environment, may produce.Carboxylic acid is on the surface of polishing particles, and particularly there is intensive absorption tendency on the surface of aerosil particle.When the blocking layer by after worn, carboxylic acid also has very strong absorption tendency to the medium layer surface of exposing.Carboxylic acid both in the surface adsorption of polishing particles, also in the surface adsorption of medium layer, made to produce electrostatic repulsion between the two, had reduced the mechanical wear to the medium layer surface thus.Therefore, the adding of carboxylic acid makes semi-conductor chip cmp of the present invention agent possess less medium layer wear rate and lower degree of corrosion.
3, owing to used,, can promote the stability of polishing particles by charged effect such as the such co-oxidants of azanol; Because azanol different according to chemical environment and pH value both can be used as oxygenant, can be used as reductive agent again, so can be used for the oxidation corrosion of balance tungsten and the speed of mechanical grinding.
Embodiment
Embodiment 1
Get silicon dioxide granule 7 grams, potassium pyrophosphate 5 grams, Potassium Iodate 1 gram, sodium phosphate 5 grams, tetramethylphosphonihydroxide hydroxide base amine 5 grams, moisturizing to 100 gram is placed on and is hybridly prepared into a kind of single component abrasive of the present invention in the container.
Embodiment 2
Get aluminium oxide particles 4 grams, potassium pyrophosphate 1 gram, hydrogen peroxidase 10 .05 gram, potassiumphosphate 0.1 gram, sodium salt 0.1 gram of tetramethylphosphonihydroxide hydroxide base amine, moisturizing to 100 gram is placed on and is hybridly prepared into a kind of single component abrasive of the present invention in the container.
Embodiment 3
Get Zirconia particles 5 grams, potassium pyrophosphate 3 grams, azanol 2 grams, ammonium phosphate 3 grams, water 84 grams mix being placed in the container as first component, get hydroxide four hexyl amines 3 gram and be placed in the container, obtain a kind of two-pack abrasive of the present invention as second component.During use above-mentioned two components are accurately mixed by stoichiometry.
Embodiment 4
Get carborundum particle 1 gram, potassium pyrophosphate 10 grams, ammonium nitrate 5 grams, phosphoric acid 2 grams, sylvite 10 grams of hydroxide four hexyl amines, moisturizing to 100 gram is placed on and is hybridly prepared into a kind of single component abrasive of the present invention in the container.
Embodiment 5
Get ceria particles 10 and restrain, potassium pyrophosphate 50 grams, sodium iodate 8 restrains, vinylformic acid 4 grams, water 20 grams, it is interior as first component to be placed on a container, gets toxilic acid 8 grams, and it is interior as second component to be placed on a container, obtains a kind of two-pack abrasive of the present invention.During use above-mentioned two components are accurately mixed by stoichiometry;
Embodiment 6
Get manganese oxide particle 20 grams, polyacrylic acid 1 gram, acetate 1 gram, water 20 gram mixing are placed in the container as first component, getting potassium pyrophosphate 8 grams is placed in the container as second component, get hydrogen peroxide 50 gram and be placed in the container, obtain a kind of three component abrasives of the present invention as the 3rd component.During use above-mentioned three components are accurately mixed by stoichiometry.
Embodiment 7
Get aerosil particle 0.05 gram, potassium pyrophosphate 0.05 gram, azanol 0.05 gram, vinylformic acid and polyacrylic mixture 0.5 gram, sodium acetate 0.02 gram, moisturizing to 100 gram is placed on and is hybridly prepared into a kind of single component abrasive of the present invention in the container.
Embodiment 8
Get silicon dioxide granule 0.02 gram, potassium pyrophosphate 0.02 gram, SODIUMNITRATE 0.002 gram, tensio-active agent 0.2 gram, toxilic acid 1 gram, moisturizing to 100 gram is placed on and is hybridly prepared into a kind of single component abrasive of the present invention in the container.
The particle size range of employed polishing particles secondary particle is 20-400nm among the present invention, and preferable range is 50-200nm, and most preferred range is 100-150nm; The B.E.T specific surface area of primary partical is 20m
2/ g-400m
2/ g, preferable range is 50m
2/ g-200m
2/ g, most preferred range is 100m
2/ g-150m
2/ g.
Claims (10)
1, a kind of semi-conductor chip cmp agent is characterized in that: formulated by appended weight percent by following material:
Polishing particles: 0.01-20%;
First oxygenant: 0.01-50%; Described first oxygenant is a pyrophosphate salt;
Second oxygenant: 0.001-50%; Described second oxygenant is one or more the mixture in iodate, hydrogen peroxide, azanol or the nitrate;
Stablizer: 0.1-5%;
Additive: 0.01-10%; Described additive is one or more the mixture in tetramethylphosphonihydroxide hydroxide base amine and its esters, hydroxide four hexyl amines and its esters, carboxylic acid and its esters; With
Water: surplus.
2, semi-conductor chip cmp according to claim 1 agent is characterized in that: described water is deionized water; Described polishing particles is one or more the mixture in silicon-dioxide, aluminum oxide, zirconium white, silicon carbide, cerium dioxide, the manganese oxide; Described stablizer is one or more the mixture in phosphoric acid salt, phosphoric acid, vinylformic acid or the polyacrylic acid.
3, semi-conductor chip cmp according to claim 1 agent is characterized in that: the particle size range of described polishing particles secondary particle is 20-400nm; The B.E.T specific surface area of primary partical is 20m
2/ g-400m
2/ g.
4, semi-conductor chip cmp according to claim 1 agent is characterized in that: the concentration range of described polishing particles is: 0.1-10%; The concentration range of first oxygenant is: 0.1-10%; The concentration range of second oxygenant is: 0.01-10%; The concentration range of additive is: 0.05-10%.
5, semi-conductor chip cmp according to claim 1 agent is characterized in that: the concentration range of described polishing particles is: 4-7%; The concentration range of first oxygenant is: 1-5%; The concentration range of second oxygenant is: 0.05-5%; The concentration range of additive is: 0.1-5%.
6, the compound method of a kind of semi-conductor chip cmp agent, it is characterized in that: take off the row material and prepare burden: polishing particles 0.01-20% by appended weight percent, the first oxygenant 0.01-50%, the second oxygenant 0.001-50%, stablizer 0.1-5%, additive 0.01-10%, moisturizing to 100%, use by following three kinds of forms preparation:
Described first oxygenant is a pyrophosphate salt;
Described second oxygenant is one or more the mixture in iodate, hydrogen peroxide, azanol or the nitrate;
Described additive is one or more the mixture in tetramethylphosphonihydroxide hydroxide base amine and its esters, hydroxide four hexyl amines and its esters, carboxylic acid and its esters;
1): polishing particles, stablizer, first oxygenant, second oxygenant, additive and the deionized water of dosage are mixed the single component form in the container that is placed on;
2): polishing particles, stablizer, first oxygenant, additive and the deionized water mixing of dosage are placed in the container as first component, second oxygenant of dosage is placed in the container as the two-pack form of second component, during use above-mentioned two components is accurately mixed by stoichiometry;
3): polishing particles, stablizer, additive and the deionized water mixing of dosage are placed in the container as first component, first oxygenant of dosage is placed in the container as second component, second oxygenant of dosage is placed in the container as three component forms of the 3rd component, during use above-mentioned three components is accurately mixed by stoichiometry.
7, the compound method of semi-conductor chip cmp according to claim 6 agent is characterized in that: described polishing particles is one or more the mixture in silicon-dioxide, aluminum oxide, zirconium white, silicon carbide, cerium dioxide, the manganese oxide; Described stablizer is one or more the mixture in phosphoric acid salt, phosphoric acid, vinylformic acid or the polyacrylic acid.
8, the compound method of semi-conductor chip cmp according to claim 6 agent is characterized in that: the particle size range of described polishing particles secondary particle is 20-400nm; The B.E.T specific surface area of primary partical is 20m
2/ g-400m
2/ g.
9, the compound method of semi-conductor chip cmp according to claim 6 agent, it is characterized in that: the concentration range of described polishing particles is: 0.1-10%; The concentration range of first oxygenant is: 0.1-10%; The concentration range of second oxygenant is: 0.01-10%; The concentration range of additive is: 0.05-10%.
10, the compound method of semi-conductor chip cmp according to claim 6 agent, it is characterized in that: the concentration range of described polishing particles is: 4-7%; The concentration range of first oxygenant is: 1-5%; The concentration range of second oxygenant is: 0.05-5%; The concentration range of additive is: 0.1-5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100175799A CN100475927C (en) | 2004-04-09 | 2004-04-09 | Chemical mechanical grinder of semiconductor chips and formulation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100175799A CN100475927C (en) | 2004-04-09 | 2004-04-09 | Chemical mechanical grinder of semiconductor chips and formulation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1680508A CN1680508A (en) | 2005-10-12 |
| CN100475927C true CN100475927C (en) | 2009-04-08 |
Family
ID=35067272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100175799A Expired - Fee Related CN100475927C (en) | 2004-04-09 | 2004-04-09 | Chemical mechanical grinder of semiconductor chips and formulation thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100475927C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012055153A1 (en) * | 2010-10-29 | 2012-05-03 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method of tungsten |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101358125B (en) * | 2007-08-03 | 2013-07-10 | 安集微电子（上海）有限公司 | Slurry products of concentrating chemical-mechanical planarization and method of use thereof |
| CN101649162A (en) * | 2008-08-15 | 2010-02-17 | 安集微电子（上海）有限公司 | Polishing solution used for chemical mechanical grounding |
| CN102782066B (en) * | 2010-02-22 | 2015-04-15 | 巴斯夫欧洲公司 | Chemical-mechanical planarization of substrates containing copper, ruthenium, and tantalum layers |
| JP6004943B2 (en) | 2010-02-24 | 2016-10-12 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Aqueous abrasives and graft copolymers and their use in polishing processes for patterned and unstructured metal surfaces |
| CN103137452B (en) * | 2011-11-25 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Control the method for replacement gate structure height |
| CN107894359B (en) * | 2017-12-13 | 2021-04-02 | 武汉电信器件有限公司 | Laser chip failure positioning analysis sample preparation method and middleware |
-
2004
- 2004-04-09 CN CNB2004100175799A patent/CN100475927C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012055153A1 (en) * | 2010-10-29 | 2012-05-03 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method of tungsten |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1680508A (en) | 2005-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3210237B1 (en) | Cobalt dishing control agents | |
| CN1158373C (en) | Chemical mechanical polishing slurry useful for copper/tantalum substrate | |
| JP2002511650A (en) | Slurry for polishing chemical-mechanical metal surfaces | |
| KR101123210B1 (en) | Non-polymeric organic particles for chemical mechanical planarization | |
| KR100732078B1 (en) | Composition and method for planarizing surfaces | |
| TWI619805B (en) | Polishing composition for a hard and brittle material, a method for polishing and manufacturing a hard and brittle material substrate | |
| US9263296B2 (en) | Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors | |
| KR20180115359A (en) | A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine | |
| CN104745086A (en) | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof | |
| TWI546371B (en) | Polishing slurry composition | |
| CN104745089A (en) | Chemically mechanical polishing liquid for flattening barrier layer and use method thereof | |
| CN100475927C (en) | Chemical mechanical grinder of semiconductor chips and formulation thereof | |
| CN104745088A (en) | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof | |
| CN101955732B (en) | A kind of chemical mechanical polishing liquid | |
| US20160013066A1 (en) | Chemical mechanical polishing (cmp) composition | |
| CN108250976A (en) | A kind of chemical mechanical polishing liquid | |
| CN102477259A (en) | Chemically mechanical polishing slurry | |
| CN104745090A (en) | Chemically mechanical polishing liquid and application thereof | |
| KR20030063763A (en) | Slurry for tungsten cmp | |
| JP5460933B1 (en) | Polishing composition | |
| CN102115635A (en) | Low-dielectric material polishing solution containing mixed abrasive materials | |
| CN104647197B (en) | It is a kind of for polishing the cmp method of tantalum | |
| WO2024075546A1 (en) | Polishing agent, polishing method, and method for manufacturing semiconductor component | |
| CN102337079B (en) | Chemically mechanical polishing agent | |
| CN106928863A (en) | A kind of acid polishing slurry for barrier polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: WELCH MATERIALS (SHANGHAI) INC. Free format text: FORMER NAME: YUEXU SEMICONDUCTOR SCIENCE AND TECHNOLOGY CO., LTD., SHANGHAI |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 351 Patentee after: Welch Materials Technology (Shanghai) Co.,Ltd. Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 351 Patentee before: Yuexu Semiconductor Science and Technology Co., Ltd., Shanghai |
|
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhao Yuexing Inventor after: Yao Lixin Inventor before: Yao Lixin |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: YAO LIXIN TO: ZHAO YUEXING YAO LIXIN |
|
| ASS | Succession or assignment of patent right |
Owner name: ZHEJIANG WELCH MATERIALS, INC. Free format text: FORMER OWNER: WELCH MATERIALS HANGHAI INC. Effective date: 20130115 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 321000 JINHUA, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130115 Address after: 6-7, building 01, 321000, R & D center, 855 Xian Yuan Road, Zhejiang, Jinhua Patentee after: Zhejiang welch Materials, Inc. Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 351 Patentee before: Welch Materials Technology (Shanghai) Co.,Ltd. |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Chemical mechanical grinder of semiconductor chips and formulation thereof Effective date of registration: 20140922 Granted publication date: 20090408 Pledgee: Agricultural Bank of China Limited by Share Ltd Jinhua Economic Development Zone Branch Pledgor: Zhejiang Xu Yue Mstar Technology Ltd|Asahi material technology (Shanghai) Co., Ltd. Registration number: 2014990000782 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090408 Termination date: 20170409 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |