CN100472794C - Large-area photovoltaic device and methods of making same - Google Patents
Large-area photovoltaic device and methods of making same Download PDFInfo
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- CN100472794C CN100472794C CN200480042595.1A CN200480042595A CN100472794C CN 100472794 C CN100472794 C CN 100472794C CN 200480042595 A CN200480042595 A CN 200480042595A CN 100472794 C CN100472794 C CN 100472794C
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
An organic photovoltaic ('PV') device comprises a plurality of organic PV cells connected in series to cover a large area. The organic PV device optionally has an electrical circuit element connected in parallel to each organic PV cell. The organic PV device allows for continued operation even when short circuits develop or electrical interruption occurs in one of the cells. The device is conveniently manufactured using a shadow mask, which allows for the formation of several consecutive layers in one apparatus.
Description
Background of invention
The present invention relates to the light absorption photonic element. particularly, the present invention relates to have large-area photoelectricity (" PV ") device and manufacture method thereof.
Semiconductor PV device is based on formed electron-hole pair after absorbing photon. and this separation of charge needs electric field usually. and this electric field may result from Schottky (Schottky) contact, wherein the metal-semiconductor interface place have built-in current potential or result from the p type and the n N-type semiconductor N between the p-n junction of material. such device is usually by inorganic semiconductor, particularly (it can be a monocrystalline to silicon, polycrystalline or impalpable structure) make. why select silicon usually, be because silicon has higher photon transformation efficiency. yet silicon technology has high cost and complicated manufacturing process usually, thereby cause device with respect to their produce of a high price.
Recently, progress along with organic semiconducting materials, organic PV device based on the active semiconductor organic material has caused more concern. these materials are expected to provide a kind of better efficient of using organic PV device in the past not reach. typically, the active component of organic PV device comprises the two-layer at least organic semiconducting materials layer that is in contact with one another layout. first organic semiconducting materials is an electron acceptor, second is electronq donor. electron acceptor is because its higher electron affinity, thereby be the material that can accept electronics from other adjacent materials. electronq donor is because its lower ionization potential, thereby be the material that can accept the hole from other adjacent materials. absorb the electron-hole pair that causes forming combination behind the photon organic photoconductive material, it must separate before the accumulation taking place. independent electronics and hole pass they separately acceptor (semi-conducting material) thus assemble at opposite electrode place.
In order to obtain the practical energy from the PV device, yet need large-area device to capture many daylight., making large-area flawless PV device but is a kind of challenge. usually, defective in the manufacturing of device, for example allow a kind of defective of being short-circuited, will cause whole device can not move with useless.
Therefore, even a kind of large tracts of land and PV device more tolerant to manufacturing defect of covering need be provided in a hurry. also need provide a kind of short circuit that in the initial element of making, has a microcosmic also still can move and produce the large tracts of land PV device of electric energy in a hurry.
Summary of the invention
The invention provides the large-area organic PV device of a kind of covering. this organic PV device comprises organic PV battery of many series connection.
According to an aspect of the present invention, organic PV battery comprises at least a organic electronic acceptor and at least a organic electronic donor. junction point of this organic electronic acceptor and electronq donor formation disposed adjacent one another, and be positioned between the pair of electrodes (negative electrode and anode) in sandwich mode jointly. the negative electrode of an organic PV battery is electrically connected with the anode of an adjacent organic PV battery.
According to a further aspect in the invention, the circuit element of the passage in a path that can be provided for the electronics bypass is in parallel with each organic PV battery.
Another aspect of the present invention provides the method for making large tracts of land PV device. and this method comprises: (a) form many organic PV batteries on substrate, each battery comprises at least two organic semiconducting materials that are arranged between a pair of first and second electrodes; (b) between second electrode of first electrode of a battery and adjacent cell, forming an electric contact. the step that forms many organic PV batteries comprises: (1) forms many first different electrodes on substrate; (2) ground floor of layout first organic semiconducting materials on each first electrode, each ground floor and other layer are separated from each other; (3) second layer of layout second organic semiconducting materials on each described ground floor, described first and second organic semiconducting materials form the junction point of electron acceptor and electronq donor; (4) on each layer of second organic semiconducting materials, arrange second electrode.
According to a further aspect in the invention, the method for making large tracts of land PV device also comprises: (a) form many independent organic PV batteries, each battery comprises two organic semiconducting materials that are arranged between a pair of first and second electrodes at least; (b) on substrate, arrange many independent organic PV batteries; (c) between second electrode of first electrode of a battery and another adjacent cell, forming and electrically contact. the step that forms independent organic PV battery comprises: (1) provides first electrode layer; (2) on described first electrode layer, arrange first organic semiconducting materials; (3) on described first organic semiconducting materials, arrange second organic semiconducting materials; (4) on described second organic semiconducting materials, arrange the second electrode lay.
Other features and advantages of the present invention are embodied in following in detailed description of the invention and the accompanying drawing, and wherein identical numeral is meant same element.
Brief description of drawings
Fig. 1 shows a PV device that comprises the PV battery of several series connection.
Fig. 2 shows the end view of embodiment of the PV device of a PV battery that comprises several series connection.
Fig. 3 shows the end view of different embodiments of the PV device of a PV battery that comprises several series connection.
Fig. 4 shows a PV device that comprises the PV battery of several series connection, and wherein circuit element is in parallel with each PV battery.
Fig. 5 shows the step of the method for the PV device of making the PV battery that contains several series connection.
Detailed description of the invention
Fig. 1 has illustrated according to the present invention the PV device of first embodiment. should be understood that, element among the figure is not to draw in proportion. and the PV device 10 among Fig. 1 comprises many organic PV batteries 12, and it is connected in series and arranges to cover large tracts of land. and term " large tracts of land " is meant that area is greater than about 100cm
2. for example yet Fig. 1 has enumerated number that six organic PV batteries 12. can select organic PV battery as required to cover available area, and condition is that all batteries is series connection. and the number that can also select organic PV battery to be to provide desired output voltage V.
Each single organic PV battery 12 all has an anode 14 to be connected with the series connection form with a negative electrode 16. these organic PV batteries 12, for example, be connected to negative electrode 16. about this point from anode 14 as shown in Figure 1, each anode and negative electrode can be electrically connected via interconnecting lead shown in Figure 1 18. and each organic PV battery 12 can absorb photon energy and produce electromotive force between its anode 14 and the negative electrode 16. and can be obtained from the output voltage V of many organic PV batteries 12 at the lead 22 of the anode 14 that connects first battery and 20 places that connect between the lead 24 of negative electrode 16 of last battery in this series connection. output voltage V is the total voltage that all independent batteries 12 are produced.
In addition, in any required device, several groups of PV batteries (wherein, every group of PV battery that comprises many series connection) can provide an overall work PV device with required voltage by any desired connected mode (for example series, parallel or its combination).
Fig. 2 shows many organic PV batteries series connection and is arranged in end view on the substrate 150.Substrate 150 can be any non electrically conductive material, glass for example, pottery, timber, paper or polymeric material. polymeric material for example is a polyester, Merlon, poly-(ethylene terephthalate) (" PET "), polyimides, Polyetherimide or silicones, be suitable. negative electrode 16 is disposed on the substrate 150, each negative electrode and other negative electrode are separated from each other. and the layer 15 of organic semiconductor electron acceptor material is arranged on the negative electrode 16, and keeping the 16 exposed electrical connections that are used for subsequently of a part of negative electrode. organic semiconductor electronq donor material layer 17 is arranged in layer 15. and anode layer 14 is arranged in layer 17: the anode 14 that forms the electrical connection 18 that comprises high conductive material organic PV battery that the negative electrode 16 of an organic PV battery 12 is adjacent with another is connected. alternatively, as shown in Figure 3, anode 14 by extending PV battery 12 is to the negative electrode 16 of adjacent PV battery, can save independent electrical connection 18. should be understood that, electrode 14 and 16 role can exchange. promptly, electrode 14 can be anode, and electrode 16 can be negative electrode. in this case, layer 15 is electron acceptor layers, and layer 17 is electronq donor layers.This PV battery pack 12 can further be protected by the protective finish of substantial transparent.Term " substantial transparent " is meant that permission has 80% during less than film by about 0.5 micron thickness of electromagnetism (" the EM ") radiation of about 10 degree incidents at least with incidence angle, preferred 90%, more preferably 95% transmissivity. term " electromagnetic radiation " is meant to have from ultraviolet (" UV ") to infrared (" IR ") wave-length coverage the electromagnetic radiation of for example about 100nm~about 1mm. preferably strong absorption day optical wavelength range organic semiconducting materials. the suitable material that is used for each element of PV device discloses as follows.
The photon that absorbs in organic semiconductor layer 15 and 17 produces excited electron-hole to (or exciton), it moves to the junction point between the layer 15 and 17, they are separated into free electron and hole there, they transfer to the electrode place that will assemble separately. and the life-span of exciton and diffusion length depend on the kind of organic semiconducting materials, but it is generally all very short. the diffusion length of estimating exciton is that the theoretic throat of about 10nm. layer 15 and 17 should be not a lot of greater than diffusion length, yet be preferably less than about 100nm., when the thickness of layer 15 and 17 reduces, the probability that is short-circuited by the defective in the organic semiconductor layer will increase. in addition, when the surface area of battery increases, the probability of introducing defective in battery also will increase. and these defectives can be, pin hole for example, scratch, tear, conduction impurity etc. when these defectives are present in this thin organic layer, be easy between electrode 14 and 16, be short-circuited by defective. because electric charge preferentially flows by defective, this short circuit makes battery 12 lose efficacy and will can not produce separation of charge. therefore, there is a defective if only can satisfy the PV device that the big PV battery of energy requirement forms by a surface area, then its whole element will can produce power. on the contrary, can avoid this situation even contain the PV device of the present invention of many PV battery series connection. one or more PV batteries are short-circuited, and remaining battery still can turn round and produce electric energy.
Alternatively, electrode 16 can be an anode, and electrode 14 can be a negative electrode. at this moment, layer 17 comprises electron acceptor material, and layer 15 comprises the electronq donor material.
In another instantiation of the present invention, each organic PV battery also comprises one or more layers, this layer is used to strengthen the transmission of electric charge to electrode. for example can be between negative electrode and electron acceptor material layer the arranging electronic transport layer. suitable electron transport material is the organometallic complex of oxine, for example three (oxine closes) aluminium; The stibene derivative; Anthracene derivant; The perylene derivative; Metal thia cyclohexene compound; Oxadiazole derivative and metallo-chelate; The derivative of pyridine; Pyrimidine derivatives; Quinoline; Quinoxaline derivant; Two quinone derivatives; Fluorine derivative and triazine that nitro replaces. can between anode and electronq donor material layer, arrange hole mobile material. suitable hole mobile material is the triaryl diamines, the tetraphenyl diamines, aromatic nitrile base, hydazone derivative, carbazole derivates, triazole derivative, imdazole derivatives, have amino oxadiazole derivative and polythiophene. can use mask by being selected from for example physical vapor deposition, chemical vapor deposition, the method of spin coating and spraying is deposited on this electronics and hole mobile material on the bottom.
Another instantiation of the present invention .PV device 10 PV battery 12. each organic PV battery 12 of comprising many series connection as shown in Figure 3 comprises above-mentioned disclosed element. in addition, circuit element 30 is in parallel with organic PV battery 12. when the flow of charge that flows to the male or female of organic PV battery by organic semiconductor layer is interrupted, circuit element 30 provides a current bypass for relevant organic PV battery. and this interruption may take place, for example between two adjacent layers in the PV battery, there is the gap, for example between organic semiconductor layer, or when having the gap between electrode and the adjacent organic semiconductor layer. this gap may be, by for example making or by the defective due to the long-term use of organic PV battery. circuit element 30 is selected from resistor, diode, rheostat or its combination.
Each comprises the module of organic PV battery of many series connection, can be arranged to cover needed large tracts of land with from the solar ray collecting photon energy and produce electric energy. need organic PV battery be installed at flexible base, board (thin polymer film that for example comprises one of above-mentioned disclosed polymer). module is settled on the surface that has any curvature then. and an instantiation, module can be positioned on the exterior wall of roof or building.
Usually, electrode is made by the material with different work functions so that induce electric field PV battery on the PV battery. and negative electrode 16 is typically by the metal with low work function, for example be selected from K, Li, Na, Mg, La, Ce, Ca, Sr, Ba, Al, Ag, In, Sn, Zn, Zr, Sm, Eu, and composition thereof or the metal of its alloy make. cathode material can use mask by being selected from physical vapor deposition, chemical vapor deposition, electron beam evaporation, sputter or electric plating method are deposited on the substrate 150 and form independent negative electrode 16. alternatively, metallic film can be deposited on the whole base plate 150, optionally etching and stay the pattern of negative electrode 16 then. as another kind of alternative methods, on substrate, form a negative pattern (for example using photolithography), resulting pattern obtains the pattern of negative electrode 16 through electroplating processes. and usually, the thickness range of negative electrode 16 is about 10nm~about 1000nm.
Be used for layer 15 suitable electron acceptor material Shi perylene 4 formyl-2-imide, perylene tetramethyl acyl diimidazole, anthraquinone acridine ketone pigment, encircle quinone, naphthalene tetramethyl acyl diimidazole, CN-or CF more
3Poly-(phenylene vinylidene), the buckminster fullerenes (C of-replacement
60).
The suitable electronq donor material that is used for layer 17 is metal-free phthalocyanine; The phthalocyanine color that comprises copper, zinc, nickel, platinum, magnesium, lead, iron, aluminium, indium, titanium, scandium, yttrium, cerium, praseodymium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium; Quinacridone pigment; Indigo and thioindigo pigment; The merocyanine compound; Cyanine compound; Side's acid compound; Hydrazone; Pyrazoline; Triphenyl methane; Triphenylamine; The electric conductive polymer of conjugation, for example polypyrrole, polyaniline, polythiophene, polyhenylene, poly-(phenylene vinylidene), poly-(inferior thienyl ethenylidene), poly-(different thia naphthalene) and poly-(silane).
Typically, the thickness range of layer 15 and 17 is about 5nm~about 300nm, be preferably that about 10nm~about 100nm. typically, this organic semiconducting materials is by being selected from vacuum moulding machine, spin coating, the method of spraying or ink jet printing is deposited on the bottom. and use mask can carry out vacuum moulding machine easily, spin coating, spraying. can use a computer Aided Design or computer assisted production software of ink jet printing carries out position with the control deposition materials. alternatively, deposit one deck organic semiconducting materials on whole surf zone, use then laser ablation methods with its patterning so that stay material in desired position. when material requested is polymer, at first the deposit monomer whose carries out polymerization then.
In another instantiation of the present invention; can protect organic PV battery pack of a series connection to prevent erosion or the mechanical damage that it is subjected to the active component in the environment by the protective barrier coating that is deposited on whole group is provided. this protective barrier can advantageously comprise many alternating layers that are made of organic material and inorganic material at least. for example at first will be selected from polyacrylate; epoxy resin; silicones; the epoxy resin of silicones-functionalization; the polymeric layer of Merlon and polyester is deposited on whole group. and can be by being selected from vacuum moulding machine; physical vapor deposition; chemical deposition; cast; spin coating; the method of dip-coating and spraying is come this polymer of deposit. then by being selected from physical vapor deposition; chemical vapor deposition; sputter; electron beam deposition and electric plating method; one deck inorganic material is deposited on the polymeric layer. the suitable inorganic material that is used for this layer is a metal; metal nitride; metal carbides; metal boride; metal oxide and composition thereof. alternatively, protective barrier can comprise the polymer of (for example oxidizability species and the steam) diffusion coefficient that has low active gases.
In the instantiation of a method of making many PV batteries, form continuous layer 16,15,17 and 14. by deposition process by a series of masks of continuous use (each provides suitable pattern at special layer)
The limiting examples of suitable deposition process comprises physical vapor deposition, chemical vapor deposition, spin coating, spraying, cast, sputter and electron beam evaporation. and the material of method selected and deposit is compatible. and alternatively, patterning forms the PV battery layers by being used in combination mask and coming optionally by cutting, etching or ablation.
In the instantiation of a method of making many PV batteries, use continuously shadow mask form organic semiconducting materials layer 15 and 17 and anode layer 14. Fig. 4 show the step of this method. at first, in step (a), provide a substrate 150. that contains one of above-mentioned disclosed baseplate material by for example physical vapor deposition, chemical vapor deposition, sputter or electron beam deposition, use mask can be deposited on the whole surface of substrate 150 forming first electrode, 16. first electrode material layers on the substrate 150 with many different separation, then this layer etching formed first electrode pattern. in step (b), on each electrode 16, to settle dividing plate 50. dividing plates 50 to form forming many dividing plates 50. on the electrode 16 and on the edge, for example form by spin coating with by the lithographic process steps patterning by the negative photoresist composition. dividing plate 50 provides shadow mask for the deposit of succeeding layer.In step (c), with first semi-conducting material with angle θ with respect to substrate 150 normals to a surface
1If be deposited on the electrode 16 cambium layer 15. for example first electrode 16 are negative electrodes, if layer 15 comprises electron acceptor so. electrode 16 is anodes, and layer 15 comprises electronq donor so. in step (d), with second semi-conducting material with angle θ
2Cambium layer comprises electron acceptor for 17. layers 15 if be deposited on the layer 15, if layer 17 comprises electronq donor so. and layer 15 comprises electronq donor, and layers 17 comprise electron acceptor so. angle θ
2Can with angle θ
1Identical or different. in step (e), with second electrode material with angle θ
3The deposit that is deposited on the layer 17 and forms the masking effect of second electrode 14. use dividing plate 50 disclosed herein has reduced at cambium layer 15, the effort of being paid in 17 and 14. this workpiece keeps original position, only need to change the source and the angle of deposit that are deposited thing. subsequently randomly by removing dividing plate 50. in step (f) as laser ablation or etching, form interconnected 18, each interconnected 18 is connected first electrode 16 of PV battery with second electrode 14 of adjacent PV battery. and can be by any suitable method, physical vapor deposition for example, chemical vapor deposition, sputter or electron beam deposition use mask to form interconnected 18.
After can forming each electrode 16, dividing plate 50, layer 15,17 and 14 and interconnected 18. all depositing step with the bar form of extending and finishing, the substrate that has formed coating is in the above sheared to form the PV battery pack of series connection along the second dimension direction of substrate 150 along substrate 150 first dimension.
Although this paper has described various instantiations; but should be appreciated that from the explanation of specification; the person skilled in the art can carry out various combinations to various elements, variable, equivalent, and these combinations are still in protection scope of the present invention as defined by the appended claims.
Claims (5)
1. an organic photoelectric (" PV ") installs (10), and it comprises:
The substrate of substantial transparent (150);
Many series connection and be arranged in organic PV battery (12) on the substrate (150), each described organic PV battery (12) comprises: at least the first and second organic semiconducting materials at first electrode (16), second electrode (14) and formation arranged adjacent one another junction point, described first organic semiconducting materials (17) is the electronq donor material, described second organic semiconducting materials (15) is an electron acceptor material, and described organic semiconducting materials is arranged between described first electrode and described second electrode;
At least one with described organic PV battery (12) at least one engage and the interconnect portion (18) that be arranged in first conductivity on the described substrate (150) of first electrode (16) electricity;
At least one with described organic PV battery (12) at least one engage and the interconnect portion (18) that be arranged in second conductivity on the described substrate (150) of second electrode (14) electricity;
First electrode of a wherein said PV battery is electrically connected to described second electrode of adjacent PV battery by the interconnect portion (18) of described first and second conductivity.
2. organic PV device according to claim 1 (10), it also comprises a circuit element (30) in parallel with organic PV battery (12), and described circuit element is selected from resistor, diode, rheostat and combination thereof.
3. organic PV device according to claim 1, wherein said first electrode (16) is an anode, it comprises the metal that is selected from substantial transparent and the material of electroconductive oxide.
4. organic PV device according to claim 1 (10), wherein said electronq donor material (17) is selected from metal-free phthalocyanine; The phthalocyanine color that comprises copper, zinc, nickel, platinum, magnesium, lead, iron, aluminium, indium, titanium, scandium, yttrium, cerium, praseodymium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium; Quinacridone pigment; Indigo and thioindigo pigment; The merocyanine compound; Cyanine compound; Side's acid compound; Hydrazone; Pyrazoline; Triphenyl methane; Triphenylamine; The electric conductive polymer of conjugation, for example polypyrrole, polyaniline, polythiophene, polyhenylene, poly-(phenylene vinylidene), poly-(inferior thienyl ethenylidene), poly-(different thia naphthalene) and poly-(silane).
5. organic PV device according to claim 1 (10), wherein said electron acceptor material (15) Xuan Zi perylene 4 formyl-2-imide, perylene tetramethyl acyl diimidazoles, anthraquinone acridine ketone pigment, encircles quinone, naphthalene tetramethyl acyl diimidazole, CN-or CF more
3Poly-(phenylene vinylidene), the buckminster fullerenes that replace.
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KR100785954B1 (en) * | 2006-05-04 | 2007-12-14 | 부산대학교 산학협력단 | Organic Photovoltaic Devices with Improved Power Conversion Efficiency and Method for Fabricating the same |
JP5580976B2 (en) * | 2008-10-30 | 2014-08-27 | 出光興産株式会社 | Organic thin film solar cell |
JP5609537B2 (en) * | 2010-10-26 | 2014-10-22 | 住友化学株式会社 | Power generator |
DE102012103448B4 (en) * | 2012-04-19 | 2018-01-04 | Heliatek Gmbh | Method of optimizing serially connected photoactive devices on curved surfaces |
JP6049556B2 (en) * | 2013-07-01 | 2016-12-21 | 株式会社東芝 | SOLAR CELL, SOLAR CELL MODULE, AND SOLAR CELL MANUFACTURING METHOD |
KR102052358B1 (en) * | 2014-03-28 | 2019-12-05 | 코오롱인더스트리 주식회사 | Flexible device |
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US6657378B2 (en) * | 2001-09-06 | 2003-12-02 | The Trustees Of Princeton University | Organic photovoltaic devices |
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Title |
---|
Solar Electricity. TOMAS MARKVART,84-85,JOHN WILEY AND SONS. 1994 |
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