CN100468091C - Manufacturing method of absorption near infrared ray and orange coloured light substrate of PDP protective screen - Google Patents
Manufacturing method of absorption near infrared ray and orange coloured light substrate of PDP protective screen Download PDFInfo
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- CN100468091C CN100468091C CNB2005100205479A CN200510020547A CN100468091C CN 100468091 C CN100468091 C CN 100468091C CN B2005100205479 A CNB2005100205479 A CN B2005100205479A CN 200510020547 A CN200510020547 A CN 200510020547A CN 100468091 C CN100468091 C CN 100468091C
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- substrate
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- infrared ray
- near infrared
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Abstract
This invention provides a method for manufacturing optical substrates of the PDP protection screen for absorbing near infrared rays and orange including: 1, brushing a substrate with a 50-60deg.C neutral detergent, then washing the substrate with a deionized water with the resistivity of 15-17Momega.cm by supersonic washing, 2, baking the substrate evenly under the temperature field of 50-80deg.C, 3, charging a medium gas to a reaction and sputtering chamber to carry out vacuum sputtering and coating to the substrate.
Description
Technical field
The present invention relates to a kind of method for making of absorption near infrared ray and orange coloured light substrate of PDP protection screen.
Background technology
Plasm TV (PDP) is the large-screen high-resolution flat pannel display TV after rear-projection, LCD TV, have visual effects such as clear picture, brightness height, angle be big, also having advantages such as in light weight, thin thickness simultaneously, is the best candidate of following real high-definition large-screen flat pannel display TV.But, because there is following problem in plasma display: very high light reflection is arranged, the orange-colored light of the 590nm that Ne gas sends can reduce excitation, and the glass that discharges interference of harmful electromagnetic interference (EMI) and near infrared and plasma display can not bear too big pressure as thin as a wafer.Therefore; use protection screen to overcome above-mentioned defective in the place ahead of plasma display at present; as US6150754, JP13-134198 and JP11-74683; the protection screen structure of its description mainly contains two kinds: first kind is to replace laminated metal layer and high refractive index oxide layer in a top-cross of half tempered glass baseplate; to form EMI (ELECTROMAGNETIC RADIATION SHIELDING film)/NIR (near-infrared absorption film) screen layer; and at the opposite side formation AR (subtracting the visible light reflectance coating) of glass baseplate elimination high light reflectivity layer, its structure is: AR/ half tempered glass/NIR/EMI.Second kind is to place conductive grid to form the EMI layer between two-layer PET (mylar), at the side adhesion AR of half tempered glass or organic glass base material film, adheres to the NIR layer at opposite opposite side.Its structure is: ARPET (mylar with antireflection function)/adhesive coating/half tempered glass or organic glass/adhesive coating/NIRPET (mylar with near-infrared absorbing function)/Ne_cut (590nm orange-colored light absorbing film)/adhesive coating/EMIPET (mylar with ELECTROMAGNETIC RADIATION SHIELDING function).
But owing to reasons such as self structure and manufacturing process, there are many defectives in the protection screen of above-mentioned two kinds of structures.The defective of first kind of structure is: only adopt single metal materials such as Ag, Au to prepare the NIR layer, so the near-infrared shielding poor performance; The defective of second kind of structure is: the NIR layer is by organic absorbing dye is doped in the resin, be coated to again and form on the PET film, because the heat resistance of this near-infrared absorbing dyestuff is poor, therefore at high temperature decompose easily, and the NIR film adhesion of this structure is poor, film mist degree height, the compactness of film and lack of homogeneity, excitation is relatively poor.
Summary of the invention
Technical matters to be solved by this invention is the method for making that a kind of absorption near infrared ray and orange coloured light substrate of PDP protection screen will be provided, and it is good and excitation is pure to have the near-infrared shielding performance.
The technical scheme that technical solution problem of the present invention is adopted is: the method for making of absorption near infrared ray and orange coloured light substrate is: 1) scrub substrate with 50 ℃～60 ℃ neutral detergent earlier, adopting ultrasonic cleaning way resistivity again is the deionized water of 15～17M Ω .CM, and substrate is cleaned; 2) in temperature is 50 ℃～80 ℃ temperature field, substrate is evenly toasted; 3) in the reactive sputtering chamber, charge into dielectric gas above-mentioned substrate is after treatment carried out vacuum sputtering coating.
The invention has the beneficial effects as follows: absorb 780nm～1100nm near infrared ray (NIR) and absorb the substrate of 590nm orange-colored light (Ne_cut) owing to adopt directly sputter deielectric-coating and metal film on substrate, removed PET, therefore the optical signature that has good absorption near infrared ray and orange-colored light, excitation is pure and mist degree rete is low, the contrast height.
Description of drawings:
Fig. 1 is the structural representation of PDP protection screen.
Embodiment
The basic structure of PDP protection screen as shown in Figure 1, it is arranged in order and is AR, PET, adhesive linkage, NIR, Ne_cut, substrate, black surround silk-screen layer, adhesive linkage, PET, EMI Mesh Film and copper-foil conducting electricity or nickel foil.Wherein: AR eliminates high light reflectivity, keeps the cleanliness of screen, and PET prevents that substrate is subjected to the accidental pressure fragmentation, increases the intensity of protection screen, and AR and PET form elimination high light reflectivity film (ARPET); 590nm orange-colored light absorption layer (Ne_cut) is the orange-colored light that absorption of N e gas sends, keep excitation pure, NIR covers 780nm～1100nm near infrared ray that the red, green, blue three-color phosphor is sent, the elimination near infrared disturbs, substrate is the protection panel, avoid being subjected to accidental pressure to impact, NIR, Ne_cut and substrate are formed the substrate of absorption near infrared ray and 590nm orange-colored light; Black surround silk-screen layer is the contrast that increases light; EMI Mesh Film is the shielding electromagnetic wave radiation, eliminates the radiation injury to the people, avoids having an effect with other electronic equipment, and PET and EMI Mesh Film form electromagnetic shielding film (EMI Mesh Film/PET); Copper-foil conducting electricity or nickel foil have been the ground connection effects; Adhesive linkage is functional membranes such as bonding ARPET, EMI Mesh Film/PET, adopts PSA transparent adhesive tapes such as (pressure sensitive adhesives) usually.Said structure is respectively to adopt: nano particle disperses dipping, coating technology to prepare ARPET; The alternately laminated technology of vacuum sputtering prepares the substrate of NIR and Ne_cut; Spatter film forming and etching grid film preparation EMI Mesh Film/PET; The roll extrusion film coating technique is made protection screen.Below its method for making will be described respectively.
One, eliminate high light reflectivity film (ARPET):
According to " n
Highd
1=n
Lowd
2=n
Highd
1=n
Lowd
2=λ/4 (or 3 λ/4, λ/8) " the anti-reflective optical film preparation principle; the present invention adopts high-index material and low-index material earlier after " nano intercalated arching pushing or the nanometer vibromill dispersion method of dividing " handled in " nano particle dispersion technology "; the batching of mixing; be mixed with the nano particle transparent resin with high and low refractive index; on the PET film; alternately laminated dipping, coating high refractive index resins and low refractive index resin, prepares densification, ARPET film uniformly.
Above-mentioned high-index material can adopt: magnesium fluoride (MgF
2), zinc paste (ZnO), titania (TiO
2), titanium nitride (TiN), indium sesquioxide (In
2O
3), tin ash (SnO
2), chrome green (Cr
2O
3), zirconium dioxide (ZrO
2), tantalum pentoxide (Ta
2O
5), lanthanum hexaboride (LaB
6), niobium oxide (NbO, Nb
2O
3, Nb
2O
5) etc.; Low-index material can adopt: silicon dioxide (SiO
2), silicon nitride (Si
3N
4), silit (SiC), alundum (Al (Al
2O
3) etc.
Embodiment 1: coating structure is: PET/TiO
2/ SiO
2/ TiO
2/ SiO
2/ MgF
2/ SiO
2The ARPET film
1, Electrostatic Treatment: the pet sheet face is carried out static discharge processing, guarantee the cleaning surfaces of PET film.Can adopt " air ionization " mode to neutralize or discharge static on the PET film, also can adopt " grenz ray " mode.
2, doping batching: will adopt the nano intercalated nanometer particle material TiO that divides after arching pushing is handled with high index of refraction and low-refraction
2, SiO
2And MgF
2, be doped to respectively in the heatproof transparent resin, be mixed with nano particle transparent resin with high and low refractive index.The heatproof transparent resin can adopt melamine resin, acryl resin, epoxy resin, silicone resin or PVB (polyvinyl butyral) polyester etc.
3, dipping, coating: with the deployed nano particle transparent resin with high and low refractive index, on the PET film surface after the above-mentioned Electrostatic Treatment, even, fine and close film is made in alternately laminated dipping, coating respectively.Usually, ground floor TiO
2The thickness of film is 10nm～50nm; Second layer SiO
2The thickness of film is 10nm～50nm; The 3rd layer of TiO
2The thickness of film is 20nm～35nm; The 4th layer of SiO
2The thickness of film is 20nm～35nm; Layer 5 Al
2O
3The thickness of film is 20nm～30nm; Layer 6 Si
3N
4The thickness of film is 20nm～30nm.
4, oven dry: in 60 ℃～80 ℃ clean environment, heating, drying.
The performance characteristic of the ARPET antireflection film by method for preparing is:
(1), film densification, evenly, accomplish that really nanometer particle disperses, film adhesion is strong;
(2), the mist degree of film is low, the contrast height, the desirable and full light ray anti-reflection of antireflection optical property feature is controlled easily.
Two, the substrate of absorption near infrared ray (NIR) and orange-colored light (Ne_cut):
The present invention utilizes the magnetron sputtering principle, in the environment of high vacuum, gas ionization produces glow discharge, ionization goes out positive and negative ion and electronics, at a high speed bombard rake thin, make the atom of various rake thins or molecule, be splashed on the high-quality substrate by alternately laminated mode, combining closely with substrate surface forms fine and close, optical thin film uniformly, thus the substrate of preparation absorption near infrared ray and 590nm wavelength orange-colored light.
The sputtering method that the present invention adopts usually comprises: RF-reactively sputtered titanium, medium frequency reactive sputtering, high frequency reactive sputtering, dc reactive sputtering or electron gun sputter.
Above-mentioned rake thin can adopt: silicon dioxide (SiO
2), silit (SiC), zinc paste (ZnO), titania (TiO
2), titanium nitride (Ti
3N
4), indium sesquioxide (In
2O
3), tin ash (SnO
2), chrome green (Cr
2O
3), zirconia (ZrO
2), tantalum pentoxide (Ta
2O
5), lanthanum hexaboride (LaB
6), niobium oxide (NbO, Nb
2O
3, Nb
2O
5), alundum (Al (Al
2O
3), zinc sulphide (ZnS), silicon nitride (Si
3N
4), zinc selenide deielectric-coating such as (ZnSe) and silver (Ag), gold metal films such as (Au).
The present invention adopts " RF-reactively sputtered titanium, medium frequency reactive sputtering, high frequency reactive sputtering or electron gun sputter " technology to prepare usually: silicon dioxide (SiO
2), silicon nitride (Si
3N
4), silit optical thin films such as (SiC); Usually adopt " vacuum dc reactive sputtering or electron gun sputter " technology to prepare: zinc paste (ZnO), titania (TiO
2), titanium nitride (Ti
3N
4), indium sesquioxide (In
2O
3), tin ash (SnO
2), chrome green (Cr
2O
3), zirconia (ZrO
2), tantalum pentoxide (Ta
2O
5), lanthanum hexaboride (LaB
6), niobium oxide (NbO, Nb
2O
3, Nb
2O
5), alundum (Al (Al
2O
3), zinc sulphide (ZnS), zinc selenide optical thin films such as (ZnSe).
Above-mentioned substrate can adopt tempered glass, half tempered glass.
Embodiment 2: preparation has " Ag/Au/Ta
2O
5/ TiO
2/ SiO
2/ Y
2O
5/ Nb
2O
5/ Ti
3N
4/ SiO
2" the half tempered glass of film layer structure
1, scrub the half tempered glass baseplate with spool roll brush or rotary broom with 50 ℃～60 ℃ neutral detergent earlier, adopting ultrasonic cleaning way resistivity again is the deionized water of 15～17M Ω .CM, and glass baseplate is cleaned.If the glass surface Electrostatic Treatment is thorough or the glass surface cleaning is unclean, true hole will appear in the optical thin film of preparation, causes film adhesion to reduce.
2, in temperature was 50 ℃～80 ℃ temperature field, double tempered glass base material evenly toasted, and can adopt the infrared ray roasting mode.If toast inhomogeneously, can cause the reflection of optical thin film inhomogeneous, influence rete component and structure, also can reduce the adhesion of rete.
3, vacuum coating: in the reactive sputtering chamber, charge into dielectric gas above-mentioned half tempered glass is after treatment carried out vacuum sputtering coating.Its main technologic parameters is:
Wherein: 1) rake-cardinal distance: distance between rake thin and the glass baseplate, it influences adhesion of thin film and uniformity of film; 2) Ar is a blanket gas, NO
2, O
2It is the reacting gas of preparation film; 3) rake voltage, rake electric current: gas ionization produces " glow discharge " and ionization goes out positive and negative ion and electronics and bombard the energy of rake thin at a high speed.
According to the optical thin film of method for preparing, the thickness 5nm～10nm of ground floor Ag film; The thickness of second layer Au film is 5nm～10nm; The 3rd layer of Ta
2O
5The thickness of film is 10nm～35nm; The 4th layer of TiO
2The thickness of film is 20nm～35nm; Layer 5 SiO
2The thickness of film is 10nm～30nm; Layer 6 Y
2O
5The thickness of film is 10nm～30nm; Layer 7 Nb
2O
5The thickness of film is 10nm～30nm; The 8th layer of Ti
3N
4The thickness of film is 20nm～30nm; The 9th layer of SiO
2The thickness of film is 20nm～30nm.
Above-mentioned optical thin film of the present invention is owing to adopt directly sputter deielectric-coating and metal film on substrate, and removed PET, therefore the absorption near infrared ray for preparing than " adopting the single metal film of vacuum sputtering " and methods such as " adopt dipping, apply organic absorbing dye " and the substrate of orange-colored light have better optical signature:
(1), the optical property feature of good " absorption near infrared ray (between 780nm～1200nm) and absorption 590nm wavelength orange-colored light ";
(2), the mist degree of rete is low, visible light transmissivity is controlled easily;
(3), the surface adhesion force height of rete, the skin hardness height, heat-resisting, moisture-proof, resistance to low temperature are good;
(4), adopt the contrast height of the protection screen of this structural membrane preparation, excitation is pure.
Three, electromagnetic shielding film (EMI Mesh Film/PET)
At first, adopt the vacuum magnetic-control sputtering coating technique, on the PET film, prepare metallic film, then, adopt high-accuracy plasma etching technology, preparation printing opacity electromagnetic screen mesh film.
Above-mentioned vacuum magnetic-control sputtering coating technique can adopt vacuum magnetically controlled DC sputtering or electron gun sputter.
Above-mentioned high-accuracy plasma etching technology has: inductively coupled plasma lithographic technique (ICP, TCP), Ecr plasma lithographic technique (ECR).
The present invention also can adopt the photoetching technique of " mask, exposure ", prepares electromagnetic wave shielding mesh mesoporous metal film.
Usually the metal material of sputter has: silver (Ag), copper (Cu), nickel (Ni), gold (Au) etc.;
The dry etching system that is adopted in the high-accuracy plasma etching technology used in the present invention comprises: five parts such as vacuum system that the reaction chamber of etching reaction, the radio-frequency power supply that produces plasma, gas flow control system, removal etching product and gas take place.This lithographic technique adopts " in magnetic field " or adopts the mode of " electron cyclotron resonace ", produces etching and decomposes, and obtains the ionization level up to 10%, and etching wire netting pore membrane prepares the electromagnetic wave shielding printing opacity mesh film that optical filter is used.
Electromagnetic screen printing opacity mesh film prepared according to the methods of the invention, the line of the tinsel of its nethike embrane directly can be controlled between 10 μ m～25 μ m, and the mesh spacing is between 250 μ m～300 μ m, and silk thread is from the horizontal by 45.This mesh film has very high full light transmission rate, does not have optical skew, and the surface resistance of nethike embrane is very low, the electromagnetic wave shielding performance is very good.
Embodiment 3: preparation copper (Cu) mesh film
1, Electrostatic Treatment: the pet sheet face is carried out static discharge processing, guarantee the cleaning surfaces of PET film.Can adopt " air ionization " mode to neutralize or discharge static on the PET film, also can adopt " grenz ray " mode, neutralize or discharge static on the PET film by producing " ion pair ".
2, vacuum sputtering copper film: adopt vacuum magnetically controlled DC sputtering technology, on above-mentioned PET film after treatment, the splash-proofing sputtering metal copper film.
3, plasma etching nethike embrane: adopt the Ecr plasma lithographic technique, on above-mentioned metal copper film, etched line directly is 10 μ m, and the aperture is the copper mesh pore membrane of 300 μ m.
4, the removing of photoresist by plasma: remove behind the etching glue on the above-mentioned copper mesh pore membrane.Can adopt oxygen gas plasma to remove etching glue.
Four, the making of PDP protection screen
Adopt dry type drum-type overlay film to attach machine; substrate, black surround silk-screen layer, EMI Mesh Film/PET and conductive copper or nickel foil with ARPET, absorption near infrared ray (NIR) and absorption 590nm orange-colored light (Ne_cut); by the roll extrusion mode, be pasted together and make protection screen.
Dry type drum-type overlay film attaching machine comprises: automatically transmit, automatically compound, automatic rolling, cut apart dispatch control system automatically.
Protection screen by adopting roll extrusion coating technique method to make has the following advantages: 1) do not have flaws such as " fold, bubbles "; 2) increased the adhesion of ARPET, EMI Mesh Film/PET film and substrate, each function filter membrane is held tightly together; 3), process stabilizing, easily control, constant product quality.
The present invention can also adopt: coating technique methods such as vacuum Filming Technology, aqueous plaster embrane method, High Temperature Gas platen press, water-based UV stickup; the substrate and the EMI Mesh Film/PET of ARPET, absorption near infrared ray (NIR) and absorption 590nm orange-colored light (Ne_cut) are pasted together, prepare the PDP protection screen.
Claims (4)
1, the method for making of the absorption near infrared ray of PDP protection screen and orange coloured light substrate, its method for making is: 1) scrub substrate with 50 ℃～60 ℃ neutral detergent earlier, adopting ultrasonic cleaning way resistivity again is the deionized water of 15～17M Ω CM, and substrate is cleaned; 2) in temperature is 50 ℃～80 ℃ temperature field, substrate is evenly toasted; 3) in the reactive sputtering chamber, charge into dielectric gas above-mentioned substrate is after treatment carried out vacuum sputtering coating.
2, the method for making of the absorption near infrared ray of PDP protection screen as claimed in claim 1 and orange coloured light substrate is characterized in that: described substrate adopts tempered glass or half tempered glass.
3, the method for making of the absorption near infrared ray of PDP protection screen as claimed in claim 1 or 2 and orange coloured light substrate is characterized in that: step 2) baking of described baking employing infrared ray.
4, the method for making of the absorption near infrared ray of PDP protection screen as claimed in claim 1 or 2 and orange coloured light substrate is characterized in that: the described vacuum sputtering coating method of step 3) adopts RF-reactively sputtered titanium, medium frequency reactive sputtering, high frequency reactive sputtering, dc reactive sputtering or electron gun sputter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100205479A CN100468091C (en) | 2005-03-21 | 2005-03-21 | Manufacturing method of absorption near infrared ray and orange coloured light substrate of PDP protective screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100205479A CN100468091C (en) | 2005-03-21 | 2005-03-21 | Manufacturing method of absorption near infrared ray and orange coloured light substrate of PDP protective screen |
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| Publication Number | Publication Date |
|---|---|
| CN1758076A CN1758076A (en) | 2006-04-12 |
| CN100468091C true CN100468091C (en) | 2009-03-11 |
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ID=36703547
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100205479A Expired - Fee Related CN100468091C (en) | 2005-03-21 | 2005-03-21 | Manufacturing method of absorption near infrared ray and orange coloured light substrate of PDP protective screen |
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|---|---|
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100973647B1 (en) * | 2007-11-20 | 2010-08-02 | 삼성코닝정밀소재 주식회사 | Filter for display apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150754A (en) * | 1997-12-22 | 2000-11-21 | Bridgestone Corporation | Electromagnetic-wave shielding and light transmitting plate and display panel |
| US6255031B1 (en) * | 1996-04-18 | 2001-07-03 | Kanebo, Ltd. | Near infrared absorbing film, and multi-layered panel comprising the film |
| CN1392580A (en) * | 2001-06-19 | 2003-01-22 | 株式会社日立制作所 | Plasma display panel |
| WO2004066342A1 (en) * | 2003-01-23 | 2004-08-05 | Skc Limited | Plasma display panel filter |
-
2005
- 2005-03-21 CN CNB2005100205479A patent/CN100468091C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255031B1 (en) * | 1996-04-18 | 2001-07-03 | Kanebo, Ltd. | Near infrared absorbing film, and multi-layered panel comprising the film |
| US6150754A (en) * | 1997-12-22 | 2000-11-21 | Bridgestone Corporation | Electromagnetic-wave shielding and light transmitting plate and display panel |
| CN1392580A (en) * | 2001-06-19 | 2003-01-22 | 株式会社日立制作所 | Plasma display panel |
| WO2004066342A1 (en) * | 2003-01-23 | 2004-08-05 | Skc Limited | Plasma display panel filter |
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| Publication number | Publication date |
|---|---|
| CN1758076A (en) | 2006-04-12 |
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