CN100467672C - Mechanical chemical polishing method - Google Patents
Mechanical chemical polishing method Download PDFInfo
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- CN100467672C CN100467672C CNB2004100968447A CN200410096844A CN100467672C CN 100467672 C CN100467672 C CN 100467672C CN B2004100968447 A CNB2004100968447 A CN B2004100968447A CN 200410096844 A CN200410096844 A CN 200410096844A CN 100467672 C CN100467672 C CN 100467672C
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Abstract
The invention discloses a mechanochemistry polishing method. The method includes the following steps: normal mechanochemistry polishing for wafer including preliminary test light pressing and heavy pressing phases; entering final light pressing phase after heavy pressing polishing; using cleaning solution to replace polishing solution until the end. The cleaning solution is water solution. Solvent includes surface active agent. Its density is between 10ppm to 20%. The cleaning solution also includes pH value conditioning agent or oxidizing agent. Each of their density is between 10ppm to 20%. The cleaning solution can reduce frictional force to reduce wafer flying. The invention can improve wafer hydrophilicity, and effectively remove polishing solution grain. It is flavourable for the next cleaning effect.
Description
Technical field
The invention belongs to the semiconductor wafer polishing technical field, particularly the processing method in a kind of last water throwing stage of chemical mechanical polishing.
Background technology
Chemical mechanical polishing is as main finishing method, no matter in the semiconductor wafer manufacturing still is the leveling of making of follow-up semiconducter device, circuit, all has a wide range of applications.Along with the continuous reduction with live width of improving constantly of large-scale integrated circuit integrated level, the polishing precision and the specification of quality of chemical mechanical polishing also improved constantly.The polishing fluid that chemical mechanical polishing uses comprises refined abrasive (silicon oxide, aluminum oxide and cerium oxide etc.) and chemical (alkali, oxygenant, additive etc.).Under the mechanical effect of the chemical action of these chemical and abrasive material, can make the wafer high polish.But these abrasive materials if be not eliminated, just become the important contamination of wafer as molecule after polishing, bring disadvantageous effect to subsequent technique.Fig. 1 is traditional polishing machine, and it is furnished with polishing fluid bucket 1 and polishing liquid pump 2, controls the supply of polishing fluid by polishing fluid valve 3 and polishing liquid pump 2, in addition also has a deionized water pipeline.During polishing, wafer 5 is installed on the polishing machine, open polishing liquid pump 2 and polishing fluid valve 3, polishing fluid is supplied on the polishing machine polish.Before polishing finishes, close polishing liquid pump 2 and polishing fluid valve 3, open deionization water valve 4, supply water on the polishing machine, use water throwing for some time, to remove the polishing fluid on the wafer 5.But this has brought other problems again, during water throwing, because the frictional force between wafer and polishing cloth becomes big, makes that the probability that wafer film flying and wafer draw occurring becomes big.American documentation literature 6719823 B2 have provided a kind of method that addresses this problem.By aerator aerating in pure water, thereby greatly reduce the film flying phenomenon.Though it is certain that this method can play a part, the wafer that some technology is dished out is a hydrophobic surface, and polishing fluid attaches on wafer surface, can not remove by simple water throwing, and also be difficult in the cleaning afterwards removing.
Summary of the invention
The purpose of this invention is to provide a kind of improved finishing method.Adopt this finishing method, polishing fluid can be removed from wafer surface, do not allow the polishing fluid particle attach on wafer surface as far as possible, thereby provide preferably the basis for follow-up cleaning.This method is applicable to the polishing of semiconductor wafers such as silicon, gallium arsenide and the planarization process in the ic manufacturing process.
Finishing method of the present invention may further comprise the steps:
(1) wafer is placed on carries out the conventional mechanical chemical rightenning on the polishing machine, comprise that preliminary examination is light to press and the weight stage;
(2) after the weight polishing finishes, enter the final light pressure stage, stop polishing fluid and supply with, supply with the cleaning solution of certain flow, finish up to polishing.
The used cleaning solution of finishing method of the present invention is the aqueous solution, and solvent comprises tensio-active agent, and concentration preferably is controlled between the 10ppm to 20%.In addition, cleaning solution also can comprise pH value conditioning agents such as mineral alkali, organic bases or basic salt, and oxygenant such as hydrogen peroxide, hypohalous acid, hypohalite, and the concentration of each composition all is controlled between the 10ppm to 20% to well.Basic salt comprises Na
2CO3, NaHCO3 etc.
The flow of cleaning solution can be adjusted in 250 ml/min to 5 liter/minute scope.
Time in the above-mentioned steps (3), be advisable in the scope to be controlled at 10 seconds to 5 minutes with the cleaning solution polishing.
The inventive method both can be used for single side polishing machine, also can be used for Twp-sided polishing machine.The inventive method is not only applicable to the polishing of semiconductor wafer, also is applicable to the planarization process in the ic manufacturing process.
Cleaning solution can reduce the frictional force of polishing cloth and wafer, thereby reduces wafer film flying phenomenon, has also reduced the probability that wafer is drawn to occur.Polishing fluid is removed from wafer surface, various compositions in the solution can increase the wetting ability of wafer, thereby make under the washing action of the mechanical effect of polishing cloth and solution, polishing fluid particle with wafer surface, remove from wafer surface to greatest extent, even that do not remove and wafer attach also a little less than, in follow-up cleaning, be easy to remove.
Obviously, the inventive method has following beneficial effect:
1, can significantly reduce the film flying phenomenon of wafer;
2, can reduce and the probability that wafer is drawn occurs;
3, improve the wetting ability of wafer, it is more effective to remove the polishing fluid particle, and helps follow-up cleaning performance.
Description of drawings
Fig. 1 is conventional glossing synoptic diagram.
Fig. 2 is a finishing method synoptic diagram of the present invention.
Among the figure, 1 is the polishing fluid bucket, and 2 are the polishing liquid pump, and 3 is the polishing fluid valve, and 4 is the deionization water valve, and 5 is wafer, and 20 is polishing machine, and 21 is the polishing fluid bucket, and 22 is the cleaning solution bucket; 23 are the polishing liquid pump, and 24 is the cleaning solution pump, and 25 is the polishing fluid valve, and 26 is the cleaning solution valve.
Embodiment
The present invention is described further below in conjunction with accompanying drawing and specific embodiment.
Fig. 2 is a finishing method synoptic diagram of the present invention.As shown in the figure, among the present invention, polishing machine 20 also is connected with a cleaning solution pipeline except that being connected with a polishing fluid pipeline.The supply of polishing fluid is by polishing liquid pump 23 and 25 controls of polishing fluid valve, and the supply of cleaning solution is by cleaning solution pump 24 and 26 controls of cleaning solution valve.
At first prepare polishing fluid and cleaning solution.Polishing fluid is used identical with common process, and the composition of cleaning solution comprises tensio-active agent, and concentration preferably is controlled between the 10ppm to 20%.In addition, cleaning solution also can comprise pH value conditioning agents such as mineral alkali, organic bases or basic salt, and oxygenant such as hydrogen peroxide, hypohalous acid, hypohalite, and the concentration of each composition all is controlled between the 10ppm to 20% to well.Basic salt comprises Na
2CO3, NaHCO3 etc.Wafer 5 is put on the polishing machine 20, opens polishing liquid pump 23 and polishing fluid valve 25 and supply with polishing fluid, carry out the routine polishing to polishing machine 20.When polishing will finish, turn off polishing liquid pump 23 and polishing fluid valve 25, open cleaning solution pump 24 and cleaning solution valve 26, supply with cleaning solution to polishing machine 20, with cleaning solution polishing fluid residual on the polished section is washed away, and the wetting ability of increase wafer 5, under the effect of the rubbing effect of polishing cloth and cleaning solution, as far as possible polishing fluid particle residual on the wafer 5 is removed, stop polishing machine after 10 seconds to 5 minutes, close cleaning solution pump 24 and cleaning solution valve 26, wafer 5 is taken off from polishing machine 20 put into water, carry out follow-up cleaning again.The introducing of cleaning solution has reduced the frictional force of polishing cloth and wafer 5, has also reduced wafer 5 film flyings and has drawn the probability in road.
Two embodiments of the present invention are disclosed below:
Embodiment one:
To 4 inches silicon chip single-sided polishings, concrete technology is as follows:
1, determines the cleaning solution proportioning: adopt Wako 601 as tensio-active agent, concentration 50ppm, ammoniacal liquor 0.2%, hydrogen peroxide 0.2%;
2, wafer 5 is installed on the polishing machine 20, open polishing liquid pump 23 and polishing fluid valve 25, start polishing machine 20 and polish polishing time 30 minutes;
3, close polishing liquid pump 23 and polishing fluid valve 25, open cleaning solution pump 24 and cleaning solution valve 26,, supply on the polishing machine 20 flow of cleaning solution with 1 liter/minute;
4, stop polishing machine 20 with the cleaning solution polishing after 2 minutes, close cleaning solution pump 24 and cleaning solution valve 26;
5, wafer 5 is taken off put into water, wait for follow-up cleaning.
The surface quality contrast of the following table wafer that to be this technology obtain with conventional glossing, the probable value in the table is to polish respectively 30 times two kinds of technologies, each is thrown, and statistics draws behind 1,200 4 inches silicon chips.
| Finishing method | Draw the road probability | Every surface particles number (〉 0.2 μ m after cleaning) probability greater than 10 | The one-pass finished rate |
| |
5％ | 10％ | 85％ |
| The |
1％ | 4％ | 95％ |
Embodiment two:
To 4 inches gallium arsenide twin polishings, concrete technology is as follows:
1, determines the cleaning solution proportioning: adopt Wako 601 as tensio-active agent, concentration 50ppm, KOH 500ppm;
2, wafer 5 is installed on the polishing machine 20, open polishing liquid pump 23 and polishing fluid valve 25, start polishing machine 20 and polish polishing time 30 minutes;
3, close polishing liquid pump 23 and polishing fluid valve 25, open cleaning solution pump 24 and cleaning solution valve 26,, supply on the polishing machine 20 flow of cleaning solution with 1 liter/minute;
4, stop polishing machine 20 with the cleaning solution polishing after 2 minutes, close cleaning solution pump 24 and cleaning solution valve 26;
5, wafer 5 is taken off put into water, wait for follow-up cleaning.
The surface quality contrast of the following table wafer that to be this technique obtain with conventional glossing, the probable value in the table is to polish respectively 20 times two kinds of techniques, each is thrown, and statistics draws behind 400 4 inches gallium arsenide wafers.
| Finishing method | Draw the road probability | Every front surface granule number (〉 0.2 μ m after cleaning) probability greater than 50 | The one-pass finished rate |
| | 3％ | 17％ | 80％ |
| The | 1％ | 6％ | 93％ |
Claims (6)
1, a kind of chemical mechanical polishing method is characterized in that may further comprise the steps:
(1) wafer is placed on carries out the conventional mechanical chemical rightenning on the polishing machine, comprise that preliminary examination is light to press and the weight stage;
(2) after finishing, the weight polishing enters the final light pressure stage, stopping polishing fluid supplying with, supply with the cleaning solution of certain flow, finish up to polishing, cleaning solution is the aqueous solution, and solvent comprises concentration tensio-active agent, the concentration mineral alkali as the pH value conditioning agent, organic bases or basic salt between 10ppm to 20% between 10ppm to 20%.
2, chemical mechanical polishing method according to claim 1 is characterized in that, described cleaning solution also comprises hydrogen peroxide, hypohalous acid or the hypohalite as oxygenant, and concentration is between 10ppm to 20%.
3, chemical mechanical polishing method according to claim 1 is characterized in that, the flow of cleaning solution can be adjusted in 250 ml/min to 5 liter/minute scope; With the time of cleaning solution polishing, between 10 seconds to 5 minutes.
4, chemical mechanical polishing method according to claim 2 is characterized in that, the flow of cleaning solution can be adjusted in 250 ml/min to 5 liter/minute scope; With the time of cleaning solution polishing, between 10 seconds to 5 minutes.
5, chemical mechanical polishing method according to claim 4 is characterized in that, described finishing method is used for 4 inches silicon chip single-sided polishings:
Cleaning solution adopts Wako 601 as tensio-active agent, and concentration is 50ppm, and ammoniacal liquor is as the pH value conditioning agent, and concentration is 0.2%, and hydrogen peroxide is as oxygenant, and concentration is 0.2%;
The flow of supplying with cleaning solution is 1 liter/minute; Stop polishing machine with the cleaning solution polishing after 2 minutes.
6, chemical mechanical polishing method according to claim 3 is characterized in that, described finishing method is used for 4 inches gallium arsenide twin polishings:
Cleaning solution adopts Wako to fall thousand zhang 601 as tensio-active agent, and concentration is 50ppm, and KOH is as the pH value conditioning agent, and concentration is 500ppm;
The flow of supplying with cleaning solution is 1 liter/minute; Stop polishing machine with the cleaning solution polishing after 2 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100968447A CN100467672C (en) | 2004-12-08 | 2004-12-08 | Mechanical chemical polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100968447A CN100467672C (en) | 2004-12-08 | 2004-12-08 | Mechanical chemical polishing method |
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| Publication Number | Publication Date |
|---|---|
| CN1786275A CN1786275A (en) | 2006-06-14 |
| CN100467672C true CN100467672C (en) | 2009-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100968447A Expired - Fee Related CN100467672C (en) | 2004-12-08 | 2004-12-08 | Mechanical chemical polishing method |
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| CN (1) | CN100467672C (en) |
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2004
- 2004-12-08 CN CNB2004100968447A patent/CN100467672C/en not_active Expired - Fee Related
Non-Patent Citations (6)
| Title |
|---|
| ULSI衬底硅单晶片清洗技术现况与展望. 刘玉岭，古海云，檀柏梅，桑建新.稀有金属，第25卷第2期. 2001 |
| ULSI衬底硅单晶片清洗技术现况与展望. 刘玉岭，古海云，檀柏梅，桑建新.稀有金属，第25卷第2期. 2001 * |
| φ300mm硅片抛光后清洗工艺的挑战--清除深亚微米颗粒的方案. Steven，He，Wang.电子工业专用设备，第117期. 2004 |
| φ300mm硅片抛光后清洗工艺的挑战--清除深亚微米颗粒的方案. Steven，He，Wang.电子工业专用设备，第117期. 2004 * |
| 超大规模集成电路二氧化硅介质化学机械抛光研究. 刘立威.河北工业大学硕士研究生学位论文. 2000 |
| 超大规模集成电路二氧化硅介质化学机械抛光研究. 刘立威.河北工业大学硕士研究生学位论文. 2000 * |
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| CN1786275A (en) | 2006-06-14 |
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Owner name: ZHE JIANG XI SHENG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: NO.46 RESEARCH INSTITUTE, CHINA ELECTRONIC SCIENCE GROUP CO.,LTD. Effective date: 20090710 |
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