CN100467224C

CN100467224C - Abrasive cloth, polishing device and method for manufacturing semiconductor device

Info

Publication number: CN100467224C
Application number: CNB2005100785987A
Authority: CN
Inventors: 平林英明; 斋藤晶子; 樱井直明; 押部义宏; 石户谷昌洋
Original assignee: Toshiba Corp; NOF Corp
Current assignee: Toshiba Corp; NOF Corp
Priority date: 2000-10-12
Filing date: 2001-10-03
Publication date: 2009-03-11
Anticipated expiration: 2021-10-03
Also published as: CN1699017A

Abstract

There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.

Description

Polishing cloth, the preparation method of burnishing device and semiconductor equipment

The application be that October 3 calendar year 2001, application number are 01818564.9 the applying date, invention and created name divides an application for the application of " polishing cloth, the preparation method of burnishing device and semiconductor equipment ".

Technical field

The present invention relates to a kind of polishing cloth, the preparation method of burnishing device and semiconductor equipment.

Background technology

When hope is carried out mirror finish (for example semiconductor chip) to semiconductor substrate, to being placed on the insulation film equating on the semiconductor chip, or metallic film carried out back etched when forming buried wiring, the burnishing device that will be equipped with polishing cloth usually is used to prepare semiconductor devices.

This burnishing device is usually by comprising turntable; The rubbing paste that is used for containing abrasive grain is conducted to the feeder sleeve of polishing cloth; Be arranged in turntable on, structure rotatable and the vertical anchor clamps that move forms; The surface of described turntable is made of basalis and polishing cloth, lower floor is made up of rigid polyurethane foams or is made up of double-decker, described double-decker is made up of rigid polyurethane foams layer and polyurethane nonwoven fabric layer, and described polishing cloth has rough surface and covers described basalis.For example, when wishing that equating is placed in insulation film in the wiring that forms on the semiconductor chip surface, this burnishing device can followingly be operated.At first, face the such mode of polishing cloth with polished insulation film, utilize fixedly semiconductor chip of anchor clamps, and when the rubbing paste that will contain abrasive grain is delivered on the polishing cloth, by anchor clamps the load of hope is applied on the semiconductor chip and semiconductor chip is contacted with polishing cloth.In this case, anchor clamps keep rotation mutually with turntable on identical direction.

In this polishing operation, the clearance gap of polishing cloth (usually 40-50 micron diameter) is 0.2 micron of diameter and be included in abrasive grain in the rubbing paste abrim, whereby, abrasive grain can be dispersed on the contact-making surface between polishing cloth and the semiconductor chip.Simultaneously, the abrasive grain polishing cloth that can also be retained between clearance gap is partly located.Therefore, insulation film can mechanically polish, and thus, has obtained the equating to the insulation film surface.

Yet when this polishing operation for a long time the time, abrasive grain is accumulated in the clearance gap, thus, will increase in the quantity of abrasive grain on this part between the polishing cloth clearance gap.Just, the polishing ability of abrasive grain will be increased.Therefore, compare with initial polishing speed, polishing speed at this moment will increase, and thus, will cause the fluctuation of so-called polishing performance.

The trimming device that the polishing cloth of fluctuation is equipped with refacer by use usually aspect the polishing performance processing of regenerating as mentioned above, described tapper has the diamond particles of many electro-deposition on metal base.Yet, be difficult to avoid the fluctuation of this polishing performance of polishing cloth, handle unless after finishing each time polishing operation, all carry out above-mentioned trimming.Handle owing to comprise above-mentioned trimming, so this will make that polishing operation extremely bothers.

Summary of the invention

The object of the present invention is to provide a kind of polishing cloth, this polishing cloth is not having can to demonstrate stable polishing performance in long-time relatively under the essential trimming processing.

Another object of the present invention is to provide a kind of polishing cloth, and this polishing cloth has the automatic supply capacity of abrasive grain and do not having can to demonstrate stable polishing performance in long-time relatively under the essential trimming processing.

Another object of the present invention is to provide a kind of burnishing device that can demonstrate the above-mentioned polishing cloth of stablizing polishing performance that is equipped with.

Another object of the present invention is to provide a kind of preparation method of semiconductor devices, this method enables to form reliably conducting parts, as the buried wiring layer, it has high accuracy at least one inlet part, described inlet part is selected from: groove that forms in the insulation film that is deposited on the semiconductor substrate and opening.

According to the present invention, a kind of polishing cloth that comprises the polishing layer that contains polymeric material is provided, described polymeric material can be used the water-bearing media hydrolysis.

According to the present invention, a kind of polishing layer and at least a polishing cloth that is selected from following abrasive grain that contains polymeric material that comprise also is provided, described polymeric material can be used the water-bearing media hydrolysis, abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, abrasive grain is scattered in the polymeric material.

According to the present invention, a kind of polishing cloth that comprises the polishing layer that contains polymeric material also is provided, described polymeric material is soluble in water-bearing media.

According to the present invention, a kind of polishing layer and at least a polishing cloth that is selected from following abrasive grain that contains polymeric material that comprise also is provided, described polymeric material is soluble in water-bearing media, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material.

According to the present invention, a kind of polishing cloth that comprises the polishing layer also is provided, be dispersed with at least a cerium oxide that is selected from the described polishing layer, manganese oxide, silica, aluminium oxide and zirconic abrasive grain, wherein, before the polishing layer stood friction stree, the surface portion of polishing layer was forbidden wash-out in the presence of water-bearing media; And when the polishing layer is subjected to friction stree, in the presence of water-bearing media, allow to carry out wash-out, make abrasive grain can be conducted to the surface of polishing layer simultaneously.

According to the present invention, a kind of burnishing device also is provided in addition, comprising:

Turntable with the surface that is coated with polishing cloth, described polishing cloth have the polishing layer that contains polymeric material, and described polymeric material can be used the water-bearing media hydrolysis;

Rotatable and vertically move, be arranged in the clamp mechanism on the turntable, it is designed to fixing polished object parts; This clamp mechanism also is designed to the load of hope is added on the object parts, whereby, makes the abrasive cloth of object parts and turntable add press contacts; Also be designed in addition on identical direction, rotate with turntable; With

The rubbing paste that is used for comprising abrasive grain is delivered to the feeder of polishing cloth.

Turntable with the surface that is coated with polishing cloth; Described polishing cloth has and contains polymeric material and at least a polishing layer that is selected from following abrasive grain, and described polymeric material can be in the water-bearing media hydrolysis; Described abrasive grain is selected from cerium oxide, manganese oxide, and silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material.

The polishing composition that is used for will comprising water at least and not contain abrasive grain is delivered to the feeder of polishing cloth.

Turntable with the surface that is coated with polishing cloth, described polishing cloth have the polishing layer that contains polymeric material, and described polymeric material is soluble in water-bearing media;

Turntable with the surface that is coated with polishing cloth, described polishing cloth has and contains polymeric material and at least a polishing layer that is selected from following abrasive grain, described polymeric material is soluble in water-bearing media, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material;

Turntable with the surface that is coated with polishing cloth, described polishing cloth includes the polishing layer, and when the polishing layer was subjected to friction stree, in the presence of water-bearing media, the surface portion of polishing layer can carry out wash-out;

Turntable with the surface that is coated with polishing cloth, described polishing cloth comprises at least a polishing layer that is selected from following abrasive grain that is dispersed in wherein, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, wherein, when the polishing layer was subjected to friction stree, the surface portion of polishing layer allowed to carry out wash-out in the presence of water-bearing media, made abrasive grain can be conducted to the surface of polishing layer simultaneously;

According to the present invention, a kind of preparation method of semiconductor devices also is provided, described method comprises:

In the insulation film on being deposited on semiconductor substrate, form at least one inlet part, described inlet part is selected from: corresponding to the groove of wiring layer configuration with corresponding to the opening of the configuration of filling vias (via-fill) (path of filling);

To be formed on by the wiring material film that copper or copper alloy are made on the surface of the insulation film that comprises the inlet part inner surface; With

Utilize burnishing device to polish this wiring material film, form at least one whereby and be selected from the filling vias in the inlet part and the conducting parts of wiring layer;

Wherein, described burnishing device comprises the turntable with the surface that is coated with polishing cloth, and described polishing cloth has the polishing layer that contains polymeric material, and described polymeric material is hydrolyzable in water-bearing media; Rotatable and the vertical clamp mechanism that moves is arranged in the turntable top and is designed to fixing polished object parts, this clamp mechanism also is designed to the load of hope is added on the object parts, make the object parts add press contacts whereby, also be designed to the direction rotation identical in addition with turntable with the abrasive cloth of turntable; With the feeder that is used to carry the rubbing paste that comprises abrasive grain to polishing cloth.

In the insulation film on being deposited on semiconductor substrate, form at least one inlet part, described inlet part is selected from: corresponding to the groove of wiring layer configuration with corresponding to the opening of the configuration of filling vias;

Wherein, burnishing device comprises the turntable with the surface that is coated with polishing cloth, described polishing cloth has and contains polymeric material and at least a polishing layer that is selected from following abrasive grain, described polymeric material is hydrolyzable in water-bearing media, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material; Rotatable and the vertical clamp mechanism that moves is arranged in the top of turntable and is designed to fixing polished object parts, this clamp mechanism also is designed to the load of hope is added on the object parts, make the object parts add press contacts whereby, and also be designed to the direction rotation identical with turntable with the abrasive cloth of turntable; With the feeder that is used for polishing agent combination is delivered to polishing cloth, described composition comprises water at least and does not contain abrasive grain.

To be formed on by the wiring material film that copper or copper alloy are made: comprise on the surface of insulation film of inlet part inner surface; With

Wherein, burnishing device comprises the turntable with the surface that is coated with polishing cloth, described polishing cloth has the polishing layer that contains polymeric material, described polymeric material is soluble in water-bearing media, rotatable and the vertical clamp mechanism that moves is arranged in the top of turntable and is designed to fixing polished object parts, this clamp mechanism also is designed to the load of hope is added on the object parts, make the object parts add press contacts whereby, and also be designed to the direction rotation identical with turntable with the abrasive cloth of turntable; The rubbing paste that is used for comprising abrasive grain is delivered to the feeder of polishing cloth.

Wherein, burnishing device comprises the turntable with the surface that is coated with polishing cloth, described polishing cloth has the polishing layer that contains polymeric material and at least a following abrasive grain, described polymeric material is soluble in water-bearing media, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material; Rotatable and the vertical clamp mechanism that moves is arranged in the top of turntable and is designed to fixing polished object parts, this clamp mechanism also is designed to the load of hope is added on the object parts, make the object parts add press contacts whereby, also be designed to the direction rotation identical in addition with turntable with the abrasive cloth of turntable; Be used for polishing agent combination is delivered to the feeder of polishing cloth, described composition comprises water at least and does not contain abrasive grain.

Wherein, burnishing device comprises the turntable with the surface that is coated with polishing cloth, and described polishing cloth includes the polishing layer, and when the polishing layer was subjected to friction stree, its surface portion allowed to carry out wash-out in the presence of water-bearing media; Rotatable and the vertical clamp mechanism that moves is arranged in the top of turntable and is designed to fixing polished object parts, also be designed in addition the load of hope is added on the object parts, make the object parts add press contacts whereby, also be designed to the direction rotation identical with turntable with the abrasive cloth of turntable; With the feeder that is used to carry the rubbing paste that comprises abrasive grain to polishing cloth.

Wherein, burnishing device comprises the turntable with the surface that is coated with polishing cloth, described polishing cloth is included in the polishing layer that wherein is dispersed with at least a following abrasive grain, and described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, wherein, when the polishing layer is subjected to friction stree, its surface portion allows to carry out wash-out in the presence of water-bearing media, makes abrasive grain can be conducted to the surface of polishing layer simultaneously; Rotatable and the vertical clamp mechanism that moves is arranged in the top of turntable and is designed to fixing polished object parts, this clamp mechanism also is designed to the load of hope is added on the object parts, make main part add press contacts whereby, also be designed to the direction rotation identical in addition with turntable with the abrasive cloth of turntable; Carry the feeder of polishing agent combination to polishing cloth, described composition to comprise water at least and do not contain abrasive grain with being used to.

Description of drawings

Fig. 1 is the sketch of illustrating burnishing device one embodiment of the present invention;

Fig. 2 illustrates: when the burnishing device that utilizes embodiment 1 and Comparative Examples 1 polishes silica membrane, and the curve map that concerns between polishing time and the polishing speed; With

Fig. 3 A, 3B and 3C show respectively: the cross-sectional view of illustrating semiconductor devices preparation process in the embodiment of the invention 8.

Implement best mode of the present invention

Then, will explain in detail the present invention.

At first, will explain six kinds of polishing cloths of the present invention.

(1) polishing cloth:

This polishing cloth comprises the polishing layer that contains polymeric material, and described polymeric material can be used the water-bearing media hydrolysis.The specific embodiment of this polishing cloth comprises: those polishing cloths of forming by the polishing layer only, and described polishing layer can be by to the injection moulding of above-mentioned polymeric material and molded; Or comprising base material that makes by following material and those polishing cloths that for example are deposited on the polishing layer on the described base material by casting to above-mentioned polymeric material, the material of wherein said formation base material is selected from various materials such as metal.

Described polymeric material is preferably selected from: comprise those polymeric materials of the main chain that has side chain, described side chain has with the hydrolyzable structure of water-bearing media.

With regard to regard to water-bearing media hydrolyzable structure, what can enumerate is following formula (I) or (II) those structures of expression:

In the formula, R ¹, R ²And R ³Can be identical or different, and the hydrogen atom of respectively doing for oneself, alkyl or aryl:

In the formula, R ⁴, R ⁵And R ⁶Can be identical or different, and the organic group of respectively do for oneself hydrogen atom or 1-18 carbon atom; R ⁷Organic group for the 1-18 carbon atom; And R ⁶And R ⁷Can be joined together to form and have Y ¹The heterocycle of (hetero atom), Y ¹Be oxygen atom or sulphur atom.

In following formula (I), R ¹, R ²And R ³The hydrogen atom of respectively doing for oneself, alkyl or aryl.In this case, alkyl is preferably selected from: the alkyl of 1-18 carbon atom, more preferably be selected from linear alkyl, and most preferably be selected from the linear alkyl of 1-4 carbon atom.

The concrete example of described alkyl comprises: methyl, and ethyl, just-and propyl group, isopropyl, just-and butyl, the second month in a season-butyl, isobutyl group, just-and amyl group, isopentyl, the second month in a season-amyl group, just-amyl group, just-and octyl group, dodecyl, cetyl, stearyl, or the like.

With regard to above-mentioned aryl, may use phenyl, the phenyl of replacement, naphthyl, the naphthyl of replacement, or the like.

Under the situation that the side chain that is connected on its main chain is made up of the structure of following formula (I) expression, with regard to regard to the example of hydrolyzable this polymeric material of water-bearing media, may use α by for example trialkylsilkl, the homopolymerization of beta-unsaturated carboxylic acid ester or copolymerization and the homopolymers or the copolymer that obtain, described carboxylate can pass through carboxylic α, the reaction between β-unsaturated monomer and the chlorination trialkyl monosilane and preparing.Just contain carboxyl α as used herein, the object lesson of β-unsaturated monomer may use acrylic acid, methacrylic acid, and itaconic acid, mesaconic acid, maleic acid, fumaric acid, or the like.In addition, with regard to the object lesson of chlorination trialkyl monosilane, may use trimethyl, triethyl group, three just-and propyl group, three-isopropyl, three-just-butyl, three-second month in a season-butyl, three-isobutyl group, three-just-amyl group, three-isopentyl, three-second month in a season-amyl group, three-just-amyl group, three-just-octyl group, three decyls, three cetyls, triphenyl, three-right-aminomethyl phenyl, the silicyl chlorination thing of tribenzyl or the like.

Under the situation that the side chain that is connected on its main chain is made up of the structure of following formula (I) expression, with regard to regard to the object lesson of hydrolyzable this polymeric material of water-bearing media, may use α, β-undersaturated homopolymers or copolymer, they have separately by the following formula (III) or (IV) repetitive of monomer of expression:

As the trialkylsilkl α that is equivalent to by the weight cell of the monomer of following formula (III) expression, the object lesson of beta-unsaturated carboxylic acid ester (acrylic acid monosilane ester), specifiable is compound by following formula (III-1) to (III-22) expression.As the trialkylsilkl α that is equivalent to by the weight cell of the monomer of following formula (IV) expression, the object lesson of beta-unsaturated carboxylic acid ester (methyl methacrylate silicon ester), specifiable is compound by following formula (IV-1) to (IV-22) expression.

Acrylic acid trimethyl silyl ester:

Acrylic acid triethylsilyl ester:

Acrylic acid three-just-the propyl group silyl ester:

Acrylic acid three-different-propyl group silyl ester:

Acrylic acid three-just-the butyl silyl ester:

Acrylic acid three-different-butyl silyl ester:

Three-second month in a season of acrylic acid-butyl silyl ester:

Acrylic acid three-just-the amyl group silyl ester:

Acrylic acid three-just-the hexyl silyl ester:

Acrylic acid three-just-the octyl group silyl ester:

Acrylic acid three-just-the dodecyl silyl ester:

Acrylic acid triphenyl silyl ester:

Acrylic acid three-right-aminomethyl phenyl ester:

Acrylic acid tribenzyl silyl ester:

Acrylic acid ethyl dimetylsilyl ester:

Acrylic acid just-butyl dimetylsilyl ester:

Acrylic acid two-different-propyl group-just-the butyl silyl ester:

Acrylic acid just-octyl group-two-just-butyl silyl ester:

Acrylic acid two-different-propyl group stearyl silyl ester:

Acrylic acid dicyclohexyl phenylester:

Acrylic acid tert-butyl phenyl silyl ester:

Acrylic acid lauryl diphenyl silyl ester:

Methacrylic acid trimethyl silyl ester:

Methacrylic acid triethylsilyl ester:

Methacrylic acid three-just-the propyl group silyl ester:

Methacrylic acid three-different-propyl group silyl ester:

Methacrylic acid three-just-the butyl silyl ester:

Methacrylic acid three-different-butyl silyl ester:

Three-second month in a season of methacrylic acid-butyl silyl ester:

Methacrylic acid three-just-the amyl group silyl ester:

Methacrylic acid three-just-the hexyl silyl ester:

Methacrylic acid three-just-the octyl group silyl ester:

Methacrylic acid three-dodecyl silyl ester:

Methacrylic acid triphenyl silyl ester:

Methacrylic acid three-right-aminomethyl phenyl ester:

Methacrylic acid tribenzyl silyl ester:

Methacrylic acid ethyl dimetylsilyl ester:

Methacrylic acid just-butyl dimetylsilyl ester:

Methacrylic acid two-different-propyl group-just-the butyl silyl ester:

Methacrylic acid just-octyl group-di-n-butyl silyl ester:

Methacrylic acid two-different-propyl group stearyl silyl ester:

Methacrylic acid dicyclohexyl phenylester:

Methacrylic acid tert-butyl phenyl silyl ester:

Methacrylic acid lauryl diphenyl silyl ester:

In addition, trialkylsilkl α, the preferred example of beta-unsaturated carboxylic acid ester is represented by following formula (VII-1) to (VII-10).

Maleic acid three-different-propyl group silicyl methyl ester:

Maleic acid three-isopropyl silicyl amyl group ester:

Maleic acid three-normal-butyl silicyl-just-butyl ester:

Maleic acid tert-butyl diphenylmethyl silylation methyl ester:

Maleic acid tert-butyl diphenylmethyl silylation-n-butyl:

Fumaric acid three-different-propyl group silicyl methyl ester:

Fumaric acid three-different-propyl group silicyl amyl group ester:

Fumaric acid three-just-butyl silicyl-n-butyl:

Fumaric acid tert-butyl diphenylmethyl silylation methyl ester:

Fumaric acid tert-butyl diphenylmethyl silylation-n-butyl:

If above-mentioned polymeric material is formed by copolymer, so, it can pass through trialkylsilkl α, the copolymerisation of beta-unsaturated carboxylic acid ester and another kind of monomer and obtaining.With regard to the object lesson of this monomer as used herein, may use α, β-unsaturated monomer.As this α, the object lesson of β-unsaturated monomer, may use: (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) acrylic acid n-propyl, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (methyl) sec-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) cyclohexyl acrylate, (methyl) 2-EHA, (methyl) lauryl acrylate, (methyl) stearyl acrylate ester, styrene, AMS, right-vinyltoluene, acrylonitrile, (methyl) acrylic acid 2-hydroxyethyl ester, perhaps polyethylene glycol or polypropylene glycol and (methyl) acrylic acid 2-hydroxyethyl ester, or the adduct of its methyl ether or ether.

Radicals R in following formula (II) ⁴, R ⁵And R ⁶Can identical or different and respectively the do for oneself organic group such as the alkyl of a hydrogen atom or 1-18 carbon atom, aryl, alkanol or the like; R ⁷For the 1-18 carbon atom being arranged respectively and being with or without substituent alkyl, aryl or alkanol; And R ⁶And R ⁷Can be connected to together and have Y with formation ¹(hetero atom) and be with or without substituent heterocycle.As the object lesson of described alkyl, the preferred use: methyl, ethyl, just-and propyl group, isopropyl, just-and butyl, the second month in a season-butyl, isobutyl group, just-and amyl group, isopentyl, the second month in a season-amyl group, just-amyl group, just-and octyl group, dodecyl, cetyl, stearyl, or the like.

The compound of representing and having the hydrolyzable structure of usefulness water-bearing media by following formula (II), (for example per molecule has one or more to compound that for example can be by having carboxyl, the compound of preferred 1-120 carboxyl) and be selected from the compound of the vinyl ether compound of representing by following formula (VII), the vinyl sulfide compound, and have olefinic double bond and the compound of the heteroatomic heterocyclic compound that constitutes by oxygen atom or sulphur atom between reaction and obtain easily.

Radicals R in following formula (VIII) ⁴, R ⁵And R ⁶Can identical or different and respectively the do for oneself organic group such as the alkyl of a hydrogen atom or 1-18 carbon atom, aryl, alkanol or the like; R ⁷For the 1-18 carbon atom being arranged respectively and being with or without substituent alkyl, aryl or alkanol; And R ⁶And R ⁷Can be connected to together and have Y with formation ¹(hetero atom) and be with or without substituent heterocycle.

Object lesson by the compound of following formula (VIII) expression is: the aliphatic vinyl ether compound, as ethylene methacrylic ether, ethyl vinyl ether, isopropyl-ethylene base ether, just-propyl vinyl ether, just-butyl vinyl ether, IVE, 2-ethylhexyl vinyl ethers, cyclohexyl vinyl ether, or the like; Corresponding to any aliphatic vinyl sulfide compound of above-mentioned ether; The cyclic vinyl ether compound, as 2,3-dihydrofuran, 3,4-dihydro-2H-pyrans or the like; And corresponding to any cyclic vinyl sulfide compound of above-mentioned cyclic vinyl ether.

The object lesson that per molecule has the polymeric material of a carboxyl at least comprises: for example, mylar, acrylic resin, the maleic acid polybutadiene, or the like.

At least the reaction that has at per molecule between the compound of the compound of a carboxyl and following formula (VIII) expression is being carried out in the presence of the acid catalyst and under the temperature in room temperature to 100 ℃ usually.

Under the situation that the side chain that is connected on its main chain is made up of the structure of following formula (II) expression, with regard to regard to the example of hydrolyzable this polymeric material of water-bearing media, may use by containing carboxyl α the homopolymerization of the β-unsaturated monomer and the product of producing by the reaction between the compound of following formula (VIII) expression or copolymerization and the homopolymers or the copolymer that obtain.Just contain carboxyl α as used herein, the object lesson of β-unsaturated monomer may use acrylic acid, methacrylic acid, and itaconic acid, mesaconic acid, maleic acid, fumaric acid, or the like.

Under the situation that the side chain that is connected on its main chain is made up of the structure of following formula (II) expression, with regard to regard to the object lesson of hydrolyzable this polymeric material of water-bearing media, may use α, β-undersaturated homopolymers or copolymer, they have separately by the following formula (V) or (VI) repetitive of monomer of expression:

Following formula (V-1) to (V-8) is the object lesson of product (acrylic acid hemiacetal ester), and these examples can be by corresponding to containing carboxyl α β-unsaturated monomer and obtained by the reaction between the compound of following formula (VIII) expression by the repetitive of the monomer of following formula (V) expression.In addition, following formula (V-1) to (V-8) is the object lesson of product (acrylic acid hemiacetal ester), and these examples can be by corresponding to containing carboxyl α β-unsaturated monomer and obtained by the reaction between the compound of following formula (VIII) expression by the repetitive of the monomer of following formula (VI) expression.

Acrylic acid 1-methoxyl group ethyl ester:

Acrylic acid 1-ethoxy ethyl ester:

Acrylic acid 1-just-the propoxyl group ethyl ester:

Acrylic acid 1-is different-the propoxyl group ethyl ester:

Acrylic acid 1-just-the butoxy ethyl ester:

Acrylic acid 1-is different-the butoxy ethyl ester:

Acrylic acid 1-(2-ethyl hexyl oxy) ethyl ester:

Acrylic acid pyrans ester:

Methacrylic acid 1-methoxyl group ethyl ester:

Methacrylic acid 1-ethoxy ethyl ester:

Methacrylic acid 1-just-the propoxyl group ethyl ester:

Methacrylic acid 1-is different-the propoxyl group ethyl ester:

Methacrylic acid 1-just-the butoxy ethyl ester:

Methacrylic acid 1-is different-the butoxy ethyl ester:

Methacrylic acid 1-(2-ethyl hexyl oxy) ethyl ester:

Methacrylic acid pyrans ester:

Other preferred example of the product that can obtain by carboxylic α β-unsaturated monomer with by the reaction between the compound of following formula (VIII) expression is enumerated by following formula (IX-1) to (IX-8).

Maleic acid two-1-methoxyl group ethyl ester:

Maleic acid two-1-ethoxy ethyl ester:

Maleic acid two-1-positive propoxy ethyl ester:

Maleic acid two-1-is different-the propoxyl group ethyl ester:

Maleic acid two-1-just-the butoxy ethyl ester:

Maleic acid two-1-is different-the butoxy ethyl ester:

Maleic acid two-1-(2-ethyl hexyl oxy) ethyl ester:

Maleic acid pyrans ester:

If above-mentioned polymeric material is made of copolymer, it can be by containing carboxyl α β-unsaturated monomer and being obtained by the product of the acquisition of the reaction between the compound of following formula (VIII) expression and the combined polymerization of another kind of monomer.With regard to the object lesson of this monomer as used herein, may use α, β-unsaturated monomer.As this α, the object lesson of β-unsaturated monomer, may use: (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) acrylic acid n-propyl, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (methyl) sec-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) cyclohexyl acrylate, (methyl) 2-EHA, (methyl) lauryl acrylate, (methyl) stearyl acrylate ester, styrene, AMS, right-vinyltoluene, acrylonitrile, (methyl) acrylic acid 2-hydroxyethyl ester, perhaps polyethylene glycol or polypropylene glycol and (methyl) acrylic acid 2-hydroxyethyl ester, or the adduct of its methyl ether or ether.

By following formula (III), (IV), (V) or (VI) content of repetitive in above-mentioned polymeric material of the monomer of expression is preferably limited in the scope of 20-100% weight, more preferably in 40-100% weight.If the content of monomeric repeating unit is lower than 20% weight, the carboxyl quantity of being regenerated when the polymeric material hydrolysis will become very little so, reduce the dissolubility of polymeric material in water-bearing media whereby, therefore, make the polishing performance variation of polishing cloth.

Polymeric material is preferably selected from number-average molecular weight from 500-500,000, more preferably from 500-100,000, and glass transition temperature from 30-100 ℃, more preferably from those materials of 40-80 ℃.In addition, comprise the polishing cloth of polymeric material, when polished object parts are polished, can further make its polishing performance stabilisation with above-mentioned certain number average molecular weight and glass transition temperature range.

Above-mentioned polishing layer preferably should constitute like this, is scattered in the polymeric material with the particle that causes the dissolubility material higher than polymeric material.

With regard to described examples of substances, may use rosin, cellulose, polyvinyl alcohol or the like.With the polymeric material is benchmark, and the particle of described material preferably should be with the ratios diverge of 1-50% volume.This is because if the amount of discrete particles is lower than 1% volume, may will be difficult to increase fully the effect (promoting the effect of polishing layer dissolving in polishing step) of these discrete particles.On the other hand, if the amount of discrete particles is higher than 50% volume, in case the polishing layer immerses in the aqueous solution, it may be decomposed at once, therefore polishing cloth can not be worked.

(2) polishing cloth:

This polishing cloth comprises the polishing layer that contains polymeric material and at least aly is selected from following abrasive grain; Described polymeric material can be in the water-bearing media hydrolysis; Described abrasive grain is selected from cerium oxide, manganese oxide, and silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material.The object lesson of this polishing cloth comprises: those polishing cloths of forming by the polishing layer only, and described polishing layer can be by to the injection moulding of above-mentioned polymeric material and molded; Or comprising base material that makes by following material and those polishing cloths that for example are deposited on the polishing layer on the described base material by casting to above-mentioned polymeric material, the material of wherein said preparation base material is selected from various materials such as metal.

The polymeric material of Shi Yonging can be identical with the polymeric material of use in the above-mentioned polishing cloth (1) in this case.

Abrasive grain is preferably with the ratio of 0.5-20% weight, evenly mixes and is scattered in the polymeric material.

Described abrasive grain preferably should be spherical or subglobular, and its average grain diameter is in the scope of 0.02-0.1 micron.

(3) polishing cloth:

This polishing cloth comprises the polishing layer that contains polymeric material, and described polymeric material is soluble in water-bearing media.The object lesson of this polishing cloth comprises: those polishing cloths of forming by the polishing layer only, and described polishing layer can be by to the injection moulding of above-mentioned polymeric material and molded; Or comprising base material that makes by following material and those polishing cloths that for example are deposited on the polishing layer on the described base material by casting to above-mentioned polymeric material, the wherein said material that makes base material is selected from various materials such as metal.

When by applying 300gf/cm to the object parts ²Load and under the condition that makes it to contact with the polishing layer, when the relative velocity between polishing layer and the polished object parts is arranged on 1.0m/sec, preferably, this polymeric material is selected from water-bearing media with soluble those materials of 0.01-10.0mg/min speed.When the rate of dissolution of polymeric material is lower than 0.01mg/min, when by polishing layer and object parts are rotated mutually, the rubbing paste that is applied to the load of hope on the object parts simultaneously and will comprises abrasive grain and water simultaneously is delivered to the polishing layer, and polished object parts are subjected to when polishing, it may be difficult to recover satisfactorily the surface of polishing layer, therefore may cause the local accumulation of abrasive grain on the polishing layer.On the other hand, when the rate of dissolution of described polymeric material is higher than 10.0mg/min, because during the polishing of polished object parts, the rate of dissolution that the polishing laminar surface increases, therefore, rubbing paste may be discharged from the polishing layer by compulsion, makes it to be difficult to fully abrasive grain with rubbing paste thus and is delivered on the contact-making surface between polishing layer and the object parts.

This polymeric material can be: by at least a acrylic acid that is selected from, methacrylic acid, itaconic acid, fumaric acid, maleic acid, acrylic acid hydroxy alkyl ester, hydroxyalkyl methacrylate, N-vinyl-2-Pyrrolidone, methyl vinyl ether, the polymerization of the monomer of N-vinyl formamide and N,N-DMAA and the homopolymers or the copolymer that obtain.

(4) polishing cloth:

This polishing cloth comprises the polishing layer, and it is polymer soluble material and be selected from cerium oxide that described polishing layer is included in water-bearing media, manganese oxide, and silica, aluminium oxide and zirconic at least a abrasive grain, this abrasive grain is scattered in the polymeric material.The object lesson of this polishing cloth comprises: those polishing cloths of forming by the polishing layer only, and described polishing layer can be by to the injection moulding of above-mentioned polymeric material and molded; Or comprising base material that makes by following material and those polishing cloths that for example are deposited on the polishing layer on the described base material by casting to above-mentioned polymeric material, the wherein said material that makes base material is selected from various materials such as metal.

In this case the polymeric material of Shi Yonging can with above-mentioned polishing cloth (3) in use identical.

(5) polishing cloth:

This polishing cloth comprises the polishing layer, and before this polishing layer was subjected to friction stree, its surface forbade carrying out wash-out in the presence of water-bearing media, and when the polishing layer is subjected to friction stree, allows to carry out wash-out in the presence of water-bearing media.

In this case, " friction stree " refers to: passing through 150-500gf/cm ²Load be applied on the object parts and make under object parts and the condition that the polishing layer contacts, when the relative velocity between polishing layer and the polished object parts is arranged on 0.2-3.0m/sec, be applied to the power on the polishing layer.

The object lesson of this polishing cloth comprises: those polishing cloths of forming by the polishing layer only, or comprise by being selected from the base material that various materials such as metal make and those polishing cloths that are deposited on the above-mentioned polishing layer on this base material.

The polishing layer is by comprising polymeric material (especially, have by following formula (III) (IV), (V) or (VI) homopolymers or the copolymer of the monomeric repeating unit of expression separately) material form, as described in above-mentioned polishing cloth (1), described polymeric material can pass through the water-bearing media hydrolysis.

(6) polishing cloth:

This polishing cloth comprises the polishing layer, be dispersed with at least a cerium oxide that is selected from, manganese oxide, silica in the described polishing layer, aluminium oxide and zirconic abrasive grain, wherein, before the polishing layer stood friction stree, the surface portion of polishing layer was forbidden wash-out in the presence of water-bearing media, and when the polishing layer is subjected to friction stree, in the presence of water-bearing media, allow to carry out wash-out,, make abrasive grain can be conducted to the surface of polishing layer with advancing.

The object lesson of polishing cloth comprises: the polishing cloth of being made up of the polishing layer that contains above-mentioned abrasive grain only; Or comprise by being selected from the base material that various materials such as metal make and those polishing cloths that contain the above-mentioned polishing layer of above-mentioned abrasive grain, polishing is deposited upon on the base material.

The polishing layer is by comprising polymeric material (especially, have separately by following formula (III), (IV), (V) or (VI) homopolymers or the copolymer of the monomeric repeating unit of expression) material and above-mentioned abrasive grain form, as described in above-mentioned polishing cloth (1), described polymeric material can pass through the water-bearing media hydrolysis.

Abrasive grain is preferably with the ratio of 0.5-20% weight, evenly mixes and is scattered in the polishing layer.

Then, 1 pair of burnishing device of the present invention makes an explanation with reference to the accompanying drawings.

Cover with polishing cloth 2 on the turntable 1.Feeder sleeve 3 is arranged on the polishing cloth 2, described feeder sleeve is used to carry and comprises abrasive grain and water and the surfactant that contains if desired or do not contain and the rubbing paste of dispersant, or carries do not contain abrasive grain and the surfactant that contains if desired or do not contain and the polishing composition of dispersant except that moisture.Rotatable and vertical being arranged in movably above the polishing cloth 2 in the substrate holder 5 that has bolster 4 on its top surface.

Be included in the rubbing paste or in the polishing agent combination example of surfactant comprise: for example non-ionic surface active agent such as polyethylene glycol phenyl ether, ethylene glycol aliphatic acid ester or the like; Amphoteric surfactant such as imidazoles betaine; Anion surfactant such as lauryl sodium sulfate; With cationic surfactant such as stearin trimethyl ammonium chloride.

With regard to polishing cloth, may use to have and above-mentioned (1) those polishing cloths to same structure described in (6).Yet when above-mentioned polishing cloth (1), when (3) and (5) were used for the polishing of object parts, the rubbing paste that comprises abrasive grain and water was delivered to polishing cloth by feed pipe 3.On the other hand, when above-mentioned polishing cloth (2), when (4) and (6) are used for the polishing of object parts, comprise water but the polishing composition that do not contain abrasive grain and contain surfactant and dispersant if necessary is delivered to polishing cloth by feed pipe 3.Below, will explain concrete finishing method.

(a) polishing that utilizes burnishing device to carry out, described device have has said structure (1), (3) and (5) any polishing cloth:

At first, utilize anchor clamps 5 to catch polished object parts 6 by this way, for example a base material is faced polishing cloth 2 to cause polished surface.Then, when making the rubbing paste that comprises abrasive grain and water constantly be delivered to polishing cloth 2, be applied on the object parts 6, so that object parts 6 are contacted with polishing cloth 2 by the load of bolster 4 with hope by feed pipe 3.Meanwhile, make anchor clamps 5 on identical direction, keep rotation mutually with turntable 1.Therefore, object parts 6 polished surfaces are transported to the polishing of the abrasive grain in the rubbing paste on the interface between object parts 6 and the polishing cloth 2.

(b) polishing that utilizes burnishing device to carry out, described device have has said structure (2), (4) and (6) any polishing cloth:

At first, utilize anchor clamps 5 to catch polished object parts 6 by this way, for example a base material is faced polishing cloth 2 to cause polished surface.Then, making the polishing composition that comprises water at least and do not contain abrasive grain constantly be delivered to polishing cloth 2, be applied on the object parts 6 by the load of bolster 4, so that object parts 6 are contacted with polishing cloth 2 with hope by feed pipe 3.Meanwhile, make anchor clamps 5 on identical direction, keep rotation mutually with turntable 1.Therefore in this case, be scattered in the abrasive grain in the polishing cloth polishing layer, owing to the wash-out of polishing layer material can be delivered on the interface between 6 polished of object parts and the polishing layer.Therefore, by the abrasive grain of supplying with by the polishing layer and in the presence of the polishing composition of being carried by feed pipe 3 that comprises water, 6 polished of object parts are polished.

Then, will the preparation method of semiconductor device of the present invention be made an explanation.

(first step)

Form the inlet part that at least one is selected from groove and opening at substrate surface, and will be deposited on by the wiring material film that copper or copper alloy are made on the whole surface that comprises the base material inlet part.

With regard to base material, may use for example semiconductor substrate or glass baseplate.

This inlet part can form in the insulation film on being formed at base material.With regard to the object lesson of insulation film, may use for example silica membrane, the glass film of boron-dipping (BPSG film), glass film of phosphorus-dipping (PSG film) or the like.Employing is by being selected from silicon nitride, carbon, and aluminium oxide, boron nitride, polishing-preventions (stopper) film that the material of diamond or the like forms can be with this insulation film covering in its surface.

With regard to copper base metal, may use copper (Cu) or copper alloy such as Cu-Si alloy, Cu-Al alloy, Cu-Si-Al alloy, Cu-Ag alloy or the like.

Described wiring material film can be by for example sputtering sedimentation, vacuum deposition or plating and form.

Conductive barrier layers can be deposited on the insulation film, and the latter is included in wiring material film and is deposited into the inlet part that forms before on the insulation film on the surface of semiconductor substrate.When such conductive barrier layers is deposited on the insulation film that comprises inlet part, at least one is selected from conductive member wiring layer and filling vias, that imbed and can forms in inlet part, described inlet part is after wiring material film deposition, because polishing as described later, that carried out and the conductibility barrier layer surrounds.Therefore, the copper that is used as conductive member can prevent to diffuse in the insulation film by this conductibility barrier film, so stoped semiconductor substrate to be polluted by copper.

This conductibility barrier film can be formed by simple layer or multilayer material, and described material for example is selected from: TiN, Ti, Nb, W, WN, TaN, TaSiN, Ta, Co, Zr, ZrN and CuTa.Preferably, can form the conductibility barrier film like this, to cause its thickness from 15-50nm.

(second step)

The wiring material film that utilizes burnishing device to make to form on base material stands polishing, copper base metal is embedded in imbeds components interior, therefore, forms the conductive member of imbedding, as the buried wiring layer of being made up of copper or copper alloy.

Particularly, the conductive member of imbedding can be formed by following method.

(a) at first, utilize the fixing semiconductor substrates 6 as polished object parts of anchor clamps 5, its fixed form makes the wiring material film of being made by copper or copper alloy can face polishing cloth (having said structure (1), (3) and (5) any polishing cloth) 2.Then, when making the rubbing paste 7 that comprises abrasive grain and water constantly be delivered to polishing cloth 2, be applied on the semiconductor substrate 6, so that semiconductor substrate 6 is contacted with polishing cloth 2 by the load of bolster 4 with hope by feed pipe 3.Meanwhile, make anchor clamps 5 on identical direction, keep rotation mutually with turntable 1.Therefore, the wiring material film of semiconductor substrate 6 mainly is delivered to the abrasive grain polishing in the rubbing paste of contact-making surface between wiring material film and the polishing cloth 2, whereby, form wherein copper or copper alloy and be embedded in conductive member inlet part inside, that imbed.

(b) at first, utilize the fixing semiconductor substrates 6 as polished object parts of anchor clamps 5, its fixed form makes the wiring material film of being made by copper or copper alloy can face polishing cloth (having said structure (2), (4) and (6) any polishing cloth) 2.Then, when making the polishing composition that comprises water at least and do not contain abrasive grain constantly be delivered to polishing cloth 2, be applied on the semiconductor substrate 6, so that semiconductor substrate 6 is contacted with polishing cloth 2 by the load of bolster 4 with hope by feed pipe 3.Meanwhile, make anchor clamps 5 on identical direction, keep rotation mutually with turntable 1.Therefore in this case, be scattered in the abrasive grain in the polishing cloth polishing layer, owing to the wash-out of polishing layer material can enter the wiring material film of base material 6 and the interface between the polishing layer.Therefore, by the abrasive grain of polishing layer supply and in the presence of the polishing composition of carrying by feed pipe 3 that comprises water, the wiring material film of base material 6 is polished, whereby, has formed wherein copper or copper alloy and has been embedded in conductive member inlet part inside, that imbed.

Above-mentioned rubbing paste or polishing agent combination can also comprise in addition: can produce copper complex formazan water-soluble organic acid (first organic acid) with copper reaction, water insoluble basically and its mechanical strength of described complex compound is lower than the mechanical strength of copper and oxidant.

This first organic acid object lesson comprises for example 2-quinoline carboxylic acid (quinaldinic acid), 2-Pyridinecarboxylic Acid, 2,6-picolinic acid, quinolinic acid or the like.

The mixing ratio of this first organic acid in rubbing paste or polishing agent combination is preferably in 0.1% weight or higher.In addition, if this first organic acid mixing ratio less than 0.1% weight, it may be difficult to produce fully: its mechanical strength is lower than the copper complex of the mechanical strength of copper on copper or the copper alloy thin films surface.Therefore, it may be difficult to promote fully to polish at it polishing speed of stage copper or copper alloy thin films.More preferably, this first organic acid mixing ratio is in the scope of 0.3-1.2% weight.

When rubbing paste or polishing agent combination contact copper or copper alloy thin films, above-mentioned oxidant can produce copper hydrate effectively.The object lesson of this oxidant is hydrogen peroxide (H ₂O ₂), clorox (NaClO) or the like.

In rubbing paste or polishing agent combination, the mixing ratio of oxidant preferably is at least ten times of first organic acids (by weight).This be because, if with respect to the mixing ratio of first this oxidant of organic acid less than ten times (by weight), it may be difficult to promote fully produce copper complex on copper or copper alloy thin films surface.With respect to first organic acid, the preferred mixing ratio of this oxidant is not less than 30 times of first organic acids (by weight), more preferably is not less than 50 times (by weight).

Above-mentioned rubbing paste or polishing agent combination can also comprise in addition: the organic acid (second organic acid) that has a carboxyl and a hydroxyl.

Above-mentioned second organic acid is the above-mentioned effect of accelerating oxidation agent generation copper hydrate effectively.This second organic acid object lesson comprises: lactic acid, and tartaric acid, mandelic acid, malic acid, or the like.These acid can be used separately or use with two or more mixture.In these acid, lactic acid is most preferred.

In the first organic acid weight, the second organic acid blending ratio preferably is limited to 20-250% weight in rubbing paste or polishing agent combination.This is because if the second organic acid blending ratio is lower than 20% weight, it may be difficult to the work of accelerating oxidation agent fully in order to produce copper hydrate.On the other hand, if this second organic acid blending ratio surpasses 250% weight, may be etched by the wiring material film that copper or copper alloy form, make it thus to form wiring diagram.More preferably, in the first organic acid weight, the second organic acid mixing ratio is in the scope of 40-200% weight.

As mentioned above, comprise the polishing layer that contains polymeric material according to polishing cloth of the present invention [polishing cloth (1)], described polymeric material can be used the water-bearing media hydrolysis.

When the rubbing paste that will comprise abrasive grain and water is delivered on the polishing cloth that constitutes as mentioned above, wherein this polishing cloth keeps rotation simultaneously the object parts to be pressed on the polishing cloth, and the polished surface of object parts mainly is delivered to the abrasive grain polishing in the rubbing paste at interface between object parts and the polishing cloth.In this case, because polishing cloth comprises with the hydrolyzable polymeric material of water-bearing media, therefore, under the pressure of object parts, apply the polishing layer region of mechanical force partly to it by sliding-contact, can be by the water hydrolysis and the dissolving that are included in the rubbing paste that it provides, therefore, making the total surface of polishing cloth is to be updated.Therefore, can prevent that now the abrasive grain in the rubbing paste from accumulating on (polishing surface) and increase on the polishing cloth surface.The result is, under the situation of not carrying out the surface regeneration operation, in considerable time, polishing cloth can be demonstrated almost be equivalent to the gratifying polishing performance of initial burnishing performance (to be compared with the polishing speed in initial burnishing stage, more or less will descend to some extent), described surface regeneration operation utilizes the refacer of trimming device to carry out after the polishing of object parts and before polishing next time usually.Therefore, may provide a kind of polishing cloth now, this polishing cloth can stably polish the object parts in long-time relatively under essential trimming handles not having.

Particularly, when homopolymers or the copolymer of the polymeric material that constitutes polishing layer main component by the monomeric repeating unit (acrylic acid silyl ester or methacrylic acid silicyl ester) that has following formula (III) separately or (IV) represent forms, or by having following formula (V) separately or (VI) when the homopolymers of monomeric repeating unit (acrylic acid hemiacetal ester or methacrylic acid hemiacetal ester) of expression or copolymer form, can further increase the dissolubility of polishing cloth by hydrolysis, therefore, enable further to improve the update efficiency on polishing cloth surface.

Just, has following formula (III) separately, (IV), (V) or (VI) homopolymers or the copolymer of the monomeric repeating unit of expression have: be bonded to silicyl ester group or hemiacetal ester group on its main chain separately, to cause, when these ester hydrolysis, free hydrophilic carboxyl will be regenerated, whereby, make it to dissolve more reposefully the surface of polishing cloth, and therefore further promote the renewal on polishing cloth surface.

In addition,, will stem from the dissolving of these particles, whereby, make it further to promote the renewal on polishing cloth surface when the particle (for example rosin) of the dissolubility material higher when being scattered in the polishing cloth than polymeric material.

Another kind comprises the polishing layer that contains polymeric material and at least a following abrasive grain according to polishing cloth of the present invention [polishing cloth (2)], described polymeric material can be used the water-bearing media hydrolysis, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia and be scattered in the polymeric material.

In the time will not moisturely being delivered on the polishing cloth that constitutes as mentioned above with polishing composition abrasive grain, this polishing cloth keeps rotation simultaneously the object parts to be pressed on the polishing cloth, because polishing cloth comprises the polymeric material of available water-bearing media hydrolysis, under the pressure of object parts, apply the polishing layer region of mechanical force by sliding-contact partly to it, be hydrolyzed and wash-out by the water that is included in the polishing composition that it provides.The result is, is scattered in abrasive grain in the polishing cloth and can enters interface between object parts and the polishing cloth, and therefore, it is at the interface above-mentioned that abrasive grain can automatically be delivered to, and makes the burnishing surface of object parts mainly to be polished by abrasive grain thus.In addition, because polishing cloth can dissolve by its hydrolysis, and the surface of polishing cloth can always be updated, and therefore, may prevent that now abrasive grain from accumulating and increase on the surface of polishing cloth.The result is, under the situation of not carrying out the surface regeneration operation, in considerable time, polishing cloth can be demonstrated almost be equivalent to the gratifying polishing performance of initial burnishing performance (to be compared with the polishing speed in initial burnishing stage, more or less will descend to some extent), described surface regeneration operation utilizes the refacer of trimming device to carry out after the polishing of object parts and before polishing next time usually.Therefore, may provide a kind of polishing cloth now, this polishing cloth can stably polish the object parts in long-time relatively under essential trimming handles not having.

Particularly, the homopolymers or the copolymer of the monomeric repeating unit (acrylic acid silyl ester or methacrylic acid silicyl ester) of expression form by following formula (III) or (IV) by having separately when the polymeric material that constitutes polishing layer main component, or by having by following formula (V) separately or (VI) when the homopolymers of monomeric repeating unit (acrylic acid hemiacetal ester or methacrylic acid hemiacetal ester) of expression or copolymer form, dissolubility by the polishing cloth hydrolysis can further be increased, therefore, enable to transport reposefully abrasive grain from polishing cloth, simultaneously, also will improve the update efficiency on polishing cloth surface.

In addition, when the particle (for example rosin) of the dissolubility material higher when being scattered in the polishing cloth, will stem from the dissolving of these particles, whereby than polymeric material, make it to transport more reposefully abrasive grain, further promote the renewal on polishing cloth surface simultaneously from polishing cloth.

Another kind comprises the polishing layer that contains polymeric material according to polishing cloth of the present invention [polishing cloth (3)], and described polymeric material dissolves in water-bearing media.

When the rubbing paste that will comprise abrasive grain and water is delivered on the polishing cloth that constitutes as mentioned above, wherein this polishing cloth keeps rotation simultaneously the object parts to be pressed on the polishing cloth, and the polished surface of object parts mainly is delivered to the abrasive grain polishing in the rubbing paste at interface between object parts and the polishing cloth.In this case, because polishing cloth comprises the polymeric material that dissolves in water-bearing media, therefore, under the pressure of object parts, can be included in water-soluble separating in the rubbing paste that it provides by sliding-contact to its polishing layer region that applies mechanical force partly, therefore making the total surface of polishing cloth is to be updated.Therefore, can prevent that now the abrasive grain in the rubbing paste from accumulating on (polishing surface) and increase on the polishing cloth surface.The result is, under the situation of not carrying out the surface regeneration operation, in considerable time, polishing cloth can be demonstrated almost be equivalent to the gratifying polishing performance of initial burnishing performance (to be compared with the polishing speed in initial burnishing stage, more or less will descend to some extent), described surface regeneration operation utilizes the refacer of trimming device to carry out after the polishing of object parts and before polishing next time usually.Therefore, may provide a kind of polishing cloth now, this polishing cloth can stably polish the object parts in long-time relatively under essential trimming handles not having.

Particularly, passing through 300gf/cm ²Load be applied on the object parts and make its with condition that the polishing layer contacts under, when the relative velocity between polishing layer and polished object parts is arranged on 1.0m/sec, when the polymeric material that constitutes polishing layer main component is formed by the material of speed dissolving that can 0.01-10.0mg/min in water-bearing media, the dissolubility of polishing cloth will further increase in polishing step, therefore, enable further to improve the update efficiency on polishing cloth surface.

The another kind of polishing layer that contains polymeric material and at least a following abrasive grain that comprises according to polishing cloth of the present invention [polishing cloth (4)], described polymeric material is soluble in water-bearing media, abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia and be scattered in the polymeric material.

In the time will not moisturely being delivered on the polishing cloth that constitutes as mentioned above with polishing composition abrasive grain, this polishing cloth keeps rotation simultaneously the object parts to be pressed on the polishing cloth, because polishing cloth is included in polymer soluble material in the water-bearing media, sliding-contact by the object parts applies the polishing layer region of mechanical force to it, carries out wash-out by the water that is included in the polishing composition that it provides.The result is, is scattered in abrasive grain in the polishing cloth and can enters interface between object parts and the polishing cloth, and therefore, it is at the interface above-mentioned that abrasive grain can automatically be delivered to, and makes the burnishing surface of object parts mainly to be polished by abrasive grain thus.In addition, because polishing cloth can be dissolved in the water, and the surface of polishing cloth can always be updated, and therefore, may prevent that now abrasive grain from accumulating and increase on the surface of polishing cloth.The result is, under the situation of not carrying out the surface regeneration operation, in considerable time, polishing cloth can be demonstrated almost be equivalent to the gratifying polishing performance of initial burnishing performance (to be compared with the polishing speed in initial burnishing stage, more or less will descend to some extent), described surface regeneration operation utilizes the refacer of trimming device to carry out after the polishing of object parts and before polishing next time usually.Therefore, may provide a kind of polishing cloth now, this polishing cloth can stably polish the object parts in long-time relatively under essential trimming handles not having.

Particularly, passing through 300gf/cm ²Load be applied on the object parts and make its with condition that the polishing layer contacts under, when the relative velocity between polishing layer and polished object parts is arranged on 1.0m/sec, when the polymeric material that constitutes polishing layer main component is formed by the material of speed dissolving that can 0.01-10.0mg/min in water-bearing media, the dissolubility of polishing cloth will further increase in polishing step, therefore, enable to transport more reposefully abrasive grain, enable further to improve the update efficiency on polishing cloth surface simultaneously from polishing cloth.

Another kind comprises the polishing layer according to polishing cloth of the present invention [polishing cloth (5)], and before the polishing layer was subjected to friction stree, wash-out in the presence of water-bearing media was forbidden on its surface; When the polishing layer was subjected to friction stree, its surface allowed to carry out wash-out in the presence of water-bearing media.

When the rubbing paste that will comprise abrasive grain and water is delivered on the polishing cloth that constitutes as mentioned above, wherein this polishing cloth keeps rotation simultaneously the object parts to be pressed in polishing cloth, and the polished surface of object parts mainly is delivered to the abrasive grain polishing in the rubbing paste at interface between object parts and the polishing cloth.In this case, the polishing layer region of the mechanical force (frictional force or friction stree) that acceptance applies by the sliding-contact to the pressurization of object parts and object parts, be included in water in the rubbing paste that it provides in the presence of carry out wash-out, therefore, the surface of polishing cloth can always be updated.Therefore, can prevent that now the abrasive grain in the rubbing paste from accumulating on (polishing surface) and increase on the polishing cloth surface.The result is, under the situation of not carrying out the surface regeneration operation, in considerable time, polishing cloth can be demonstrated almost be equivalent to the gratifying polishing performance of initial burnishing performance (to be compared with the polishing speed in initial burnishing stage, more or less will descend to some extent), described surface regeneration operation utilizes the refacer of trimming device to carry out after the polishing of object parts and before polishing next time usually.Therefore, may provide a kind of polishing cloth now, this polishing cloth can stably polish the object parts in long-time relatively under essential trimming handles not having.

Another kind of comprise according to polishing cloth of the present invention [polishing cloth (6)]: its be designed to the contacted face of polished object parts at least one polishing layer, be dispersed with at least a cerium oxide that is selected from the described polishing layer, manganese oxide, silica, aluminium oxide and zirconic abrasive grain.The surface portion of polishing layer was forbidden wash-out in the presence of water-bearing media before the polishing layer stands friction stree; And when the polishing layer is subjected to friction stree, in the presence of water-bearing media, allow to carry out wash-out, make abrasive grain can be conducted to the surface of polishing layer simultaneously.

In the time will not moisturely being delivered on the polishing cloth that constitutes as mentioned above with polishing composition abrasive grain, this polishing cloth keeps rotation simultaneously the object parts to be pressed on the polishing cloth, the polishing layer region of the mechanical force (friction stree) that acceptance applies by the sliding-contact to object parts pressurizations and object parts, be included in water in the polishing composition that it provides in the presence of carry out wash-out.The result is, is scattered in abrasive grain in the polishing cloth and can enters interface between object parts and the polishing cloth, and therefore, it is at the interface above-mentioned that abrasive grain can automatically be delivered to, and makes the burnishing surface of object parts mainly to be polished by abrasive grain thus.In addition, because polishing cloth can be owing to the acting on water and carry out wash-out under existing of above-mentioned friction stree, and the surface of polishing cloth can always be updated, and therefore, may prevent that now abrasive grain is in lip-deep accumulation of polishing cloth and increase.The result is, under the situation of not carrying out the surface regeneration operation, in considerable time, polishing cloth can be demonstrated almost be equivalent to the gratifying polishing performance of initial burnishing performance (to be compared with the polishing speed in initial burnishing stage, more or less will descend to some extent), described surface regeneration operation utilizes the refacer of trimming device to carry out after the polishing of object parts and before polishing next time usually.Therefore, may provide a kind of polishing cloth now, this polishing cloth can stably polish the object parts in long-time relatively under essential trimming handles not having.

Burnishing device according to one embodiment of the present invention comprises: have the turntable on the surface that is coated with polishing cloth, described polishing cloth has by said structure (1), the polishing layer of (3) and (5) any formation; Rotatable and vertically move, be arranged in the clamp mechanism on the turntable, it is designed to fixing polished main element; This clamp mechanism also is designed to the load of hope is added on the main element, whereby, makes the abrasive cloth of main element and turntable add press contacts; Also be designed in addition on identical direction, rotate with turntable; Be delivered to the feeder of polishing cloth with the rubbing paste that is used for to comprise abrasive grain.Owing to have a said structure (1), (3) and (5) any effect of abrasive cloth, therefore, this burnishing device can stably polish the object parts for a long time, and needn't rebuild processing.

Burnishing device according to another embodiment of the invention comprises: the turntable with surface of the polishing cloth that is coated with band polishing layer, wherein said polishing layer is by said structure (2), (4) and (6) any formation and comprise at least a cerium oxide that is selected from, manganese oxide, silica, aluminium oxide and zirconic abrasive grain; Rotatable and vertically move, be arranged in the fixed mechanism on the turntable, it is designed to fixing polished main element; This clamp mechanism also is designed to the load of hope is added on the main element, whereby, makes the abrasive cloth of main element and turntable add press contacts; Also be designed in addition on identical direction, rotate with turntable; Be delivered to the feeder of polishing cloth with the polishing composition that is used for to comprise water at least and not contain abrasive grain.Owing to have a said structure (2), (4) and (6) any effect of abrasive cloth, this burnishing device can be with the abrasive grain auto-feed to polished surface and can polish the object parts long-term and stably, and needn't rebuild processing.

The preparation method of burnishing device according to another embodiment of the invention comprises the steps: in the insulation film on being deposited on semiconductor substrate, form at least one inlet part, described inlet part is selected from: corresponding to the groove of wiring layer configuration with corresponding to the opening of the configuration of filling vias; To be formed on by the wiring material film that copper or copper alloy are made on the surface of the insulation film that comprises the inlet part inner surface; And utilize burnishing device that the polishing wiring material film is polished, said device is equipped with and is selected from any polishing cloth of said structure (1)-(6), forms at least one whereby and is selected from the filling vias in inlet part and the conductive member of wiring layer.

According to the present invention, because wiring material film is designed to polish by the step of the simplification of using burnishing device, described device is equipped with the polishing cloth that can keep stablizing polishing performance and needn't carry out above-mentioned trimming, therefore, may make such semiconductor devices in a large number now, wherein, conductive member is embedded in the inlet part as the wiring layer of film thickness with hope.

Then, will explain in detail embodiments of the invention.

The specific embodiment

＜synthesis example 1 〉

At first, 40.0 weight portion dimethylbenzene and the adding of 10.0 weight portion butyl acetates are equipped with in the flask of agitator, and the mixture that obtains is heated to 134 ℃ temperature.Then, in 3 hours, stir down, to contain 60.0 parts by weight of acrylic acid three-different-propyl group silyl ester (by the compound of following formula (III-4) expression), 15.0 weight portion methacrylic acid 2-ethoxy ethyl ester, 20.0 parts by weight of methylmethacrylate, 5.0 weight portion n-BMAs and 1.0 weight portion polymerization catalysts or perbutyl I (trade name, NOF CORPOPATION; BPIC t butyl peroxy isopropyl carbonate) drops in the said mixture in the flask.After adding end, the mixture that obtains is incubated 30 minutes in this temperature, to obtain reactant mixture.Then, within 20 minutes, will drop in the above-mentioned reactant mixture, and when keeping this temperature, reactant mixture was stirred 2 hours, to finish polymerisation by the mixture that 10.0 weight portion dimethylbenzene and 1.0 weight portion perbutyl I form.At last, dilute the reactant mixture that obtains by add 48.0 weight portion dimethylbenzene to it, thereby obtain 50% xylene solution of copolymer, described copolymer has the acrylic acid silyl ester repetitive by the structural formula of following formula (X) expression.

In addition, the number-average molecular weight of the copolymer that obtains with this mode is 67,000, and its glass transition temperature is 56 ℃.Gross weight with copolymer is a benchmark, and the ratio of described acrylic acid silyl ester repetitive is 60% weight.

(by weight percentage) at the ratio of components shown in this structural formula X

＜synthesis example 2 〉

At first, 40.0 weight portion dimethylbenzene and the adding of 10.0 weight portion butyl acetates are equipped with in the flask of agitator, and the mixture that obtains is heated to 134 ℃ temperature.Then, in 3 hours, stir down, to contain 43.7 weight portion methacrylic acid lists-different-butoxy ethyl ester (by the compound of above-mentioned (VI-6) expression), 52.0 parts by weight of methylmethacrylate, the mixed solution of 4.3 parts by weight of acrylic acid 2-Octyl Nitrites and 1.0 weight portion polymerization catalysts or perbutyl I drop in the said mixture in the flask.After adding end, the mixture that obtains is incubated 30 minutes in this temperature, to obtain reactant mixture.Then, within 20 minutes, will drop in the above-mentioned reactant mixture, and when keeping this temperature, reactant mixture was stirred 2 hours, to finish polymerisation by the mixture that 10.0 weight portion dimethylbenzene and 1.0 weight portion perbutyl I form.At last, dilute the reactant mixture that obtains by add 48.0 weight portion dimethylbenzene to it, thereby obtain 50% xylene solution of copolymer, described copolymer has the methacrylic acid hemiacetal ester repetitive by the structural formula of following formula (XI) expression.

In addition, the number-average molecular weight of the copolymer that obtains with this mode is 38,000, and its glass transition temperature is 50 ℃.

Gross weight with copolymer is a benchmark, and the ratio of described methacrylic acid hemiacetal ester repetitive is 43.7% weight.

(by weight percentage) at the ratio of components shown in this structural formula XI

＜synthesis example 3 〉

At first, 40.0 weight portion dimethylbenzene and the adding of 10.0 weight portion butyl acetates are equipped with in the flask of agitator, and the mixture that obtains is heated to 134 ℃ temperature.Then, in 3 hours, stir down, will contain 64.0 parts by weight of acrylic acid, the mixed solution of 36.0 parts by weight of acrylic acid methoxyl group ethyl esters and 1.0 weight portion polymerization catalysts or perbutyl I drops in the said mixture in the flask.After adding end, the mixture that obtains is incubated 30 minutes in this temperature, to obtain reactant mixture.Then, within 20 minutes, will drop in the above-mentioned reactant mixture, and when keeping this temperature, reactant mixture was stirred 2 hours, to finish polymerisation by the mixture that 10.0 weight portion dimethylbenzene and 1.0 weight portion perbutyl I form.

At last, by to wherein adding 48.0 weight portion dimethylbenzene with the dilution of the reactant mixture that obtains, thereby obtain the xylene solution of 50% polymer, described polymer is soluble in water-bearing media.

In addition, the number-average molecular weight of the copolymer that obtains with this mode is 21,000, and its glass transition temperature is 35 ℃.

＜synthesis example 4 〉

At first, 40.0 weight portion dimethylbenzene and the adding of 10.0 weight portion butyl acetates are equipped with in the flask of agitator, and the mixture that obtains is heated to 134 ℃ temperature.Then, in 3 hours, stir down, will contain 15.0 parts by weight of methylmethacrylate, the mixed solution of 85.0 weight portion butyl methacrylates and 1.0 weight portion polymerization catalysts or perbutyl I drops in the said mixture in the flask.After adding end, the mixture that obtains is incubated 30 minutes in this temperature, to obtain reactant mixture.Then, within 20 minutes, will drop in the above-mentioned reactant mixture, and when keeping this temperature, reactant mixture was stirred 2 hours, to finish polymerisation by the mixture that 10.0 weight portion dimethylbenzene and 1.0 weight portion perbutyl I form.

At last, by to wherein adding 48.0 weight portion dimethylbenzene, thereby obtain the xylene solution of 50% polymer with the dilution of the reactant mixture that obtains, when polymer stands friction stree, its surface can be in water-bearing media wash-out.

In addition, the number-average molecular weight of the copolymer that obtains with this mode is 17,000, and its glass transition temperature is 44 ℃.

(embodiment 1)

With the ratio of 0.5% weight, be that 0.2 micron cerium oxide abrasives grain is scattered in the pure water with average grain diameter, with the preparation rubbing paste.

In addition, the xylene solution of copolymer 50% is cast to the surface of turntable, described copolymer has the structural formula of structure (X) expression synthetic in above-mentioned synthesis example 1, and dry then is 50 microns and the polishing cloth that is made of above-mentioned copolymer to obtain thickness.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

Then, preparation has square silicon substrate silica membrane, 20mm thereon.Then, by this way silicon substrate 6 is fixed on the anchor clamps 5 of burnishing device shown in Figure 1, to cause the polishing cloth 2 of its silica membrane in the face of on turntable 1 surface, forming.Thereafter, by the bolster 4 of anchor clamps 5, by will about 300g/cm ²Load be applied on the silicon substrate 6 and the polishing cloth 2 that forms on this silicon substrate 6 and the turntable 1 contacted, turntable 1 is rotated on identical mutually direction with anchor clamps 5, its speed of rotation is respectively 100rpm and 103rpm, flow rate with 20mL/min is delivered to rubbing paste on the polishing cloth 2 by feeder sleeve 3, whereby the silica membrane that forms is gone up on silicon substrate 6 surfaces and is polished 60 minutes.

(Comparative Examples 1)

With condition identical described in the embodiment 1 under, the silica membranes that form are gone up on silicon substrate 6 surfaces are carried out 60 minutes polishing, different is, with rigid polyurethane foams (IC1000 (trade name); Rodel Co. Ltd) is assembled in the burnishing device as polishing cloth.

Measure the polishing time and the polishing speed of silica membrane in embodiment 1 and the Comparative Examples 1, the results are shown among Fig. 2.

As seen from Figure 2, under the situation of Comparative Examples 1, promptly utilize the burnishing device be equipped with the traditional polishing cloth that is formed by rigid polyurethane foams, under the situation that the silica membrane that forms on the silicon substrate is polished, polishing speed will increase with the passage of polishing time proportionally.More precisely, when polishing time continues 60 minutes, polishing speed will increase by 30% than initial burnishing speed, therefore show the fluctuation of polishing speed.

On the contrary, under the situation of embodiment 1, promptly utilize and be equipped with the burnishing device of polishing cloth under the situation of polishing at the silica membrane that forms on the silicon substrate, described polishing cloth is formed by the copolymer with the structural formula shown in the following formula (X), although polishing speed more or less increases pro rata with the passage of polishing time, but when the polishing time that continues 60 minutes, its polishing speed only increases by 10% than initial burnishing speed, has therefore shown metastable polishing speed.

(embodiment 2)

The xylene solution of copolymer 50% is cast to the surface of turntable, and described copolymer has the structural formula of structure (XI) expression synthetic in above-mentioned synthesis example 2, and dry then is 50 microns and the polishing cloth that is made of above-mentioned copolymer to obtain thickness.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

Then, preparation has square silicon substrate silica membrane, 20mm thereon.Then, by this way silicon substrate 6 is fixed on the anchor clamps 5 of burnishing device shown in Figure 1, to cause the polishing cloth 2 of its silica membrane in the face of on turntable 1 surface, forming.Then, use and identical mode described in the embodiment 1, the silica membrane that forms is gone up on silicon substrate 6 surfaces polished.

In addition, utilize #80 diamond electro-deposition trimmer and at 200g/cm ²Under the turntable speed conditions of load and 160rpm, be used to regulate the trimming of polishing cloth surface state.

The result proves, by carrying out in advance 5 minutes or longer above-mentioned trimming, may carry out stable polishing to silica membrane with the polishing speed of about 40nm/min.

(embodiment 3)

The xylene solution (copolymer of methyl methacrylate/butyl methacrylate) of copolymer 50% is applied to IC1000/Suba-400, and (on polishing face Ltd), dry then is 85 microns polishing cloth to obtain thickness for trade name, Rodel Co.; Wherein said copolymer is synthetic in above-mentioned synthesis example 4, and promptly when it was subjected to friction stree, its surface is eluted polymer in water-bearing media.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

Then, preparation has the silica membrane square silicon substrate (P-TEOS film), 20mm that forms thereon.Then, by this way silicon substrate 6 is fixed on the anchor clamps 5 of burnishing device shown in Figure 1, to cause the polishing cloth 2 of its silica membrane in the face of on turntable 1 surface, forming.Then, by the bolster 4 of anchor clamps 5, by applying about 300g/cm to silicon substrate 6 ²Load and the polishing cloth 2 that forms on silicon substrate 6 and the turntable 1 is contacted, simultaneously, turntable 1 is rotated on identical direction respectively with the rotating speed of 50rpm and 160rpm with anchor clamps 5; With the flow velocity of 20mL/min, the rubbing paste that will be comprised pure water and 1% weight cerium oxide abrasives grain by feeder sleeve 3 is delivered on the polishing cloth 2, whereby the silica membrane that forms is gone up on silicon substrate 6 surfaces and is polished; The average grain diameter of wherein said abrasive grain is 0.2 micron and is scattered in the pure water.

＜embodiment 4 〉

The xylene solution (copolymer of acrylic acid/acrylic acid methoxyl group ester) of copolymer 50% is applied to IC1000/Suba-400, and (on polishing face Ltd), thickness is 55 microns for trade name, Rodel Co., and is dry then to obtain polishing cloth; Wherein said copolymer is synthetic in above-mentioned synthesis example 3, promptly is polymer soluble in water-bearing media.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

Then, preparation has the silica membrane square silicon substrate (P-TEOS film), 25mm that forms thereon.Then, by this way silicon substrate 6 is fixed on the anchor clamps 5 of burnishing device shown in Figure 1, to cause the polishing cloth 2 of its silica membrane in the face of on turntable 1 surface, forming.Thereafter, with identical mode described in the embodiment 3, the silica membranes that form are gone up on silicon substrate 6 surface are polished.

The result proves, by carrying out in advance 5 minutes or longer above-mentioned trimming, may carry out stable polishing to silica membrane with the polishing speed of about 50nm/min.

(embodiment 5)

With the xylene solution of copolymer 50% be applied to IC1000/Suba-400 (trade name, Rodel Co., Ltd.) on, thickness is 70 microns, and is dry then to obtain polishing cloth; Wherein said copolymer is synthetic in synthesis example 2, promptly has the copolymer of methacrylic acid hemiacetal ester repetitive.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

(embodiment 6)

With the xylene solution of copolymer 50% be applied to IC1000/Suba-400 (trade name, Rodel Co., on polishing face Ltd.), about 50 microns of thickness, dry then to obtain polishing cloth; Wherein said copolymer has acrylic acid silyl ester repetitive and is synthetic in above-mentioned synthesis example 1, and in addition, xylene solution also comprises the cerium oxide abrasives grain of 0.2 micron of 3% weight (in copolymer weight), average grain diameter.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

Then, preparation has the silica membrane square silicon substrate (P-TEOS film), 25mm that forms thereon.Then, by this way silicon substrate 6 is fixed on the anchor clamps 5 of burnishing device shown in Figure 1, to cause the polishing cloth 2 of its silica membrane in the face of on turntable 1 surface, forming.Thereafter, by the bolster 4 of anchor clamps 5, by applying about 300g/cm to silicon substrate 6 ²Load and the polishing cloth 2 that forms on silicon substrate 6 and the turntable 1 is contacted, simultaneously, make turntable 1 and anchor clamps 5 respectively with the rotating speed of 50rpm and 160rpm in identical direction rotation, with the flow velocity of 20mL/min the aqueous hydrogen peroxide solution (polishing agent combination) of 4.3% weight is delivered to polishing cloth 2 by feeder sleeve 3.Whereby, the silica membrane that forms on the silicon substrate surface is polished.

The result proves, although polishing agent combination does not contain abrasive grain, by carrying out the trimming in 10 seconds in advance, may silica membrane be polished with the polishing speed of about 4nm/min.

(embodiment 7)

With the xylene solution of copolymer 50% be applied to IC1000/Suba-400 (trade name, Rodel Co., on polishing face Ltd.), about 50 microns of thickness, dry then to obtain polishing cloth; Wherein said copolymer has acrylic acid silyl ester repetitive and is synthetic in above-mentioned synthesis example 1, and in addition, xylene solution also comprises the alumina abrasive grain of 0.6 micron of 3% weight (in copolymer weight), the average grain diameter that are dispersed in wherein.Then, the turntable that is coated with polishing cloth is assembled in as shown in Figure 1 the above-mentioned burnishing device.

Then, preparation has the square silicon substrate copper film, 25mm that forms thereon.Then, by this way silicon substrate 6 is fixed on the anchor clamps 5 of burnishing device shown in Figure 1, to cause the polishing cloth 2 of its copper pellicular front on turntable 1 surface, forming.Thereafter, by the bolster 4 of anchor clamps 5, by applying about 300g/cm to silicon substrate 6 ²Load and the polishing cloth 2 that forms on silicon substrate 6 and the turntable 1 is contacted, simultaneously, turntable 1 is rotated in identical direction with the rotating speed of 50rpm and 160rpm respectively with anchor clamps 5, flow velocity with 20mL/min is delivered to polishing cloth 2 with polishing agent combination by feeder sleeve 3, whereby the copper film that forms is gone up on silicon substrate 6 surfaces and is polished.In addition, polishing agent combination is by the quinaldinic acid that comprises 0.5% weight as used herein, the lactic acid of 0.6% weight, and the aqueous solution of the hydrogen peroxide of the surfactant of 0.9% weight and 4.5% weight forms.

The result proves, although polishing agent combination does not contain abrasive grain, by carrying out the trimming in 10 seconds in advance, may copper film be polished with the polishing speed of about 11nm/min.

(embodiment 8)

At first, preparation is by 3.6% weight colloidal silica, 1.1% weight colloidal alumina, 0.6% weight 2-quinoline carboxylic acid (quinaldinic acid), 0.35% weight lactic acid, 1.8% weight ammonium lauryl sulfate, 3.9% weight hydrogen peroxide, the rubbing paste that the water of 0.5% weight hydroxyethyl cellulose and aequum is formed.

Then, by the CVD method, as the layer insulation film, for example the silica membrane 22 with thickness 1000nm is deposited on the surface of the silicon substrate 21 that has diffusion layer source-drain layer as shown in Figure 3A in its surface.Thereafter, by the photetching technology, form a plurality of grooves 23, the width of each groove is 100 microns, and the degree of depth is that 8 microns and configuration are corresponding to wiring layer.In addition, shown in Fig. 3 B, by sputtering method, on the whole surface of the silica membrane 22 that comprises above-mentioned groove surfaces, with mentioned order, sequentially form by TiN and make and thickness is the barrier layer 24 of 15 nanometers and the copper film 25 that thickness is 1.6 microns.

Then, utilize burnishing device as shown in Figure 1, this device has the turntable that its surface coverage has the thick polishing cloth of 0.8mm, and described polishing cloth is formed by the copolymer with same structure formula of using in embodiment 1, i.e. structural formula (X); In such a way, the silicon substrate 21 that will have the copper film 25 that forms thereon is fixed on the anchor clamps 5 of burnishing device on the contrary, goes up the polishing cloth 2 that forms to cause its copper film 25 in the face of turntable 1 surface.Thereafter, by the bolster 4 of anchor clamps 5, by silicon substrate 21 is applied about 500gf/cm ²Load and it is depressed on the turntable 1 on the polishing cloth that forms, make turntable 1 and anchor clamps 5 in identical direction rotation with the rotating speed of 103rpm and 100rpm respectively simultaneously, flow velocity with 50mL/min is delivered to polishing cloth 2 by feeder sleeve 3 with rubbing paste, whereby copper film 25 and barrier layer 24 are carried out about 40 minutes polishing, till silica membrane 22 and barrier layer 24 exposures, therefore, formed and be blocked layer 24 copper wiring layer 26 that surround, that imbed, shown in Fig. 3 C.As a result, made semiconductor devices with copper wiring layer 26 of imbedding.

As mentioned above, according to the present invention, may provide a kind of polishing cloth now, this polishing cloth is not having can to demonstrate stable polishing performance in long-time relatively under the essential trimming processing.

In addition, according to the present invention, also may provide a kind of polishing cloth, this polishing cloth has the automatic supply capacity of abrasive grain and is not having can to demonstrate stable polishing performance in long-time relatively under the essential trimming processing.

In addition, according to the present invention, a kind of burnishing device that has above-mentioned polishing cloth may be provided, and described polishing cloth can demonstrate stable polishing performance and be applicable to the chemically mechanical polishing (CMP) that forms the buried wiring layer of imbedding conductive member such as semiconductor device.

In addition, according to the present invention, a kind of preparation method of semiconductor devices also may be provided, this method makes it and may form conductive member such as high-precision buried wiring layer reliably at least one inlet part, and described inlet part is selected from: be deposited on the groove and the opening that form in the insulation film on the semiconductor substrate.

Claims

1. burnishing device comprises:

Turntable with the surface that is coated with polishing cloth, described polishing cloth comprises the polishing layer that contacts and contain polymeric material with polished main element, described polymeric material can be used the water-bearing media hydrolysis, wherein said polymeric material comprises the main chain that has side chain, described side chain has with the hydrolyzable structure of water-bearing media, and this structure is represented by following formula (I) or (II):

In the formula, R ⁴, R ⁵And R ⁶Can be identical or different, and the organic group of respectively do for oneself hydrogen atom or 1-18 carbon atom; R ⁷Organic group for 1-18 carbon atom; And R ⁶And R ⁷Can be joined together to form and have hetero atom Y ¹Heterocycle, Y ¹Be oxygen atom or sulphur atom;

Rotatable and vertically move, be arranged in the clamp mechanism on the turntable, it is designed to fixing polished main element, this clamp mechanism also is designed to the load of hope is added on the main element, whereby, make the abrasive cloth of main element and turntable add press contacts, also be designed in addition on identical direction, rotate with turntable; With

2. the burnishing device of claim 1, wherein, described polymeric material is α, β-undersaturated homopolymers or copolymer, and they have by the following formula that has formula (I) separately (III) separately or (IV) or separately have the formula (V) of formula (II) or (VI) repetitive of monomer of expression:

In the formula, R ⁴, R ⁵And R ⁶Can be identical or different, and the organic group of respectively do for oneself hydrogen atom or 1-18 carbon atom; R ⁷Organic group for 1-18 carbon atom; And R ⁶And R ⁷Can be joined together to form and have hetero atom Y ¹Heterocycle, Y ¹Be oxygen atom or sulphur atom.

3. burnishing device comprises:

Turntable with the surface that is coated with polishing cloth, described polishing cloth comprises and contacts with polished main element and contain polymeric material that can hydrolysis in water-bearing media and contain the polishing layer of at least a following abrasive grain, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material, wherein said polymeric material comprises the main chain that has side chain, described side chain has with the hydrolyzable structure of water-bearing media, and this structure is represented by following formula (I) or (II):

4. the burnishing device of claim 3, wherein, described polymeric material is α, β-undersaturated homopolymers or copolymer, and they have by the following formula that has formula (I) separately (III) separately or (IV) or separately have the formula (V) of formula (II) or (VI) repetitive of monomer of expression:

5. the preparation method of a semiconductor devices, described method comprises the steps:

Wherein, described burnishing device comprises the turntable with the surface that is coated with polishing cloth, described polishing cloth comprises the polishing layer that contacts and contain polymeric material with wiring material film, described polymeric material is hydrolyzable in water-bearing media, wherein said polymeric material comprises the main chain that has side chain, described side chain has with the hydrolyzable structure of water-bearing media, and this structure is represented by following formula (I) or (II):

Rotatable and vertically move, be arranged in the clamp mechanism on the turntable, it is designed to fixing polished main element, this clamp mechanism also is designed to the load of hope is added on the main element, make main element add press contacts whereby, also be designed to the direction rotation identical in addition with turntable with the abrasive cloth of turntable; With

6. the semiconductor devices preparation method of claim 5, wherein, described polymeric material is α, β-undersaturated homopolymers or copolymer, they have by the following formula that has formula (I) separately (III) separately or (IV) or separately have the formula (V) of formula (II) or (VI) repetitive of monomer of expression:

7. the preparation method of a semiconductor devices, described method comprises the steps:

Wherein, burnishing device comprises the turntable with the surface that is coated with polishing cloth, described polishing cloth comprises and contacts with wiring material film and contain polymeric material and at least a polishing layer that is selected from following abrasive grain, described polymeric material is hydrolyzable in water-bearing media, described abrasive grain is selected from cerium oxide, manganese oxide, silica, aluminium oxide and zirconia, this abrasive grain is scattered in the polymeric material, wherein said polymeric material comprises the main chain that has side chain, and described side chain has with the hydrolyzable structure of water-bearing media, and this structure is represented by following formula (I) or (II):

Rotatable and vertically move, be arranged in the clamp mechanism on the turntable, it is designed to fixing polished main element, this clamp mechanism also is designed to the load of hope is added on the main element, make main element add press contacts whereby, and also be designed to the direction rotation identical with turntable with the abrasive cloth of turntable; With

Be used for carrying moisture at least and not containing the feeder of the polishing agent combination of abrasive grain to polishing cloth.

8. the semiconductor devices preparation method of claim 7, wherein, described polymeric material is α, β-undersaturated homopolymers or copolymer, they have by the following formula that has formula (I) separately (III) separately or (IV) or separately have the formula (V) of formula (II) or (VI) repetitive of monomer of expression: