CN100466247C - Internal connection wire structure and its manufacturing method - Google Patents
Internal connection wire structure and its manufacturing method Download PDFInfo
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- CN100466247C CN100466247C CNB2005101184959A CN200510118495A CN100466247C CN 100466247 C CN100466247 C CN 100466247C CN B2005101184959 A CNB2005101184959 A CN B2005101184959A CN 200510118495 A CN200510118495 A CN 200510118495A CN 100466247 C CN100466247 C CN 100466247C
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Abstract
An internal wire connection structure is prepared as arranging the first dielectric layer on substrate, setting the first light absorption layer between the first dielectric layer and substrate, arranging double-embedded structure in the first dielectric layer and in the first light absorption layer as well as electric-connecting it to the first conductive region on substrate, setting the second dielectric layer on the first one and setting the second light absorption layer between two said dielectric layer.
Description
Technical field
The present invention relates to a kind of semiconductor structure and preparation method thereof, relate in particular to a kind of internal connection-wire structure and preparation method thereof.
Background technology
Growing along with science and technology, the component size of integrated circuit is also constantly dwindled, and causes the spacing density in the intraconnections constantly to increase.And in internal connection-wire structure, in/use of the dielectric layer (as the silicon oxide dielectric layer) of high-k but is easy to cause RC to postpone.So in present technology, during the low-k material often is used to replace/and high dielectric constant material, to improve above-mentioned shortcoming.General low-k material can effectively reduce the parasitic capacitance of intraconnections, postpones thereby reduce RC, or the interference between the mitigation metal wire, improve service speed.So the low-k material very extensively is used as metal intermetallic dielectric layer (inter-metal dielectrics, material IMD) in the High Speed ICs.
General low-k material can strengthen its physical characteristic by the slaking of ultraviolet light irradiation (UV curing), as modulus (modulus), hardness (hardness) and adhesive force (adhesion).But owing to have the above dielectric layer of one deck in the common metal internal connection-wire structure mostly; must carry out once above ultraviolet light irradiation slaking in the manufacturing process and make; yet; since dielectric layer this as transparent and light-permeable; therefore; do not penetrated by can not allowed ultraviolet light downwards by the dielectric layer that metal interconnecting structure blocked; and make the dielectric layer of lower level usually can be subjected to repeatedly irradiation slaking; that is more the dielectric layer of lower floor receive ultraviolet light chance just the more, cause the physical characteristic difference to some extent between each dielectric layer.
Figure 1A is the graph of a relation of the modulus/hardness added value and the ultraviolet light irradiation slaking condition of dielectric material.Figure 1B is the graph of a relation of dielectric constant (K) added value and the ultraviolet light irradiation slaking condition of dielectric material.Fig. 1 C is the graph of a relation of stress (stress) added value and the ultraviolet light irradiation slaking condition of dielectric material.By learning among the figure, the modulus/hardness of dielectric material, dielectric constant and stress all can promote along with the increase of irradiation slaking number of times.Therefore, if when the irradiation slaking number of times accepted is different between each dielectric layer, the physical characteristic between between each dielectric layer will be different fully also.
Summary of the invention
The structure that the purpose of this invention is to provide a kind of intraconnections makes the physical property of the dielectric layer in its structure not be subjected to the influence of irradiation slaking number of times.
Another object of the present invention provides a kind of structure of intraconnections, utilizes the light absorbing zone that is positioned on each layer dielectric layer to avoid dielectric layer to be subjected to the UV-irradiation of repetition.
A further object of the present invention provides a kind of manufacture method of internal connection-wire structure, helps to make in the internal connection-wire structure each dielectric layer through after the ultraviolet light irradiation slaking repeatedly, and the physical characteristic of each layer dielectric layer can not produce excessive difference.
The present invention proposes a kind of internal connection-wire structure, and this internal connection-wire structure comprises a substrate, one first dielectric layer, a dual-damascene structure, one first light absorbing zone, one second dielectric layer and one second light absorbing zone.Substrate has a conduction region.First dielectric layer is disposed on the substrate.First light absorbing zone is disposed between the substrate and first dielectric layer.Dual-damascene structure is disposed in first dielectric layer and first light absorbing zone, and electrically connects with the conduction region of substrate.Second dielectric layer is disposed on first dielectric layer.Second light absorbing zone is disposed between first dielectric layer and second dielectric layer.First light absorbing zone and second light absorbing zone absorb ultraviolet light.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned light absorbing zone and the material of second light absorbing zone comprise nitrogen-containing compound, carbon compound or oxygenatedchemicals, as silicon oxynitride.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned light absorbing zone and the thickness of second light absorbing zone are for example between 100
～1000
Between.
According to the described internal connection-wire structure of the embodiment of the invention, also comprise an etch stop layer, be disposed between first light absorbing zone and first dielectric layer or be disposed between first light absorbing zone and the substrate.
According to the described internal connection-wire structure of the embodiment of the invention, also comprise an etch stop layer, be disposed between second light absorbing zone and this second dielectric layer or be disposed between second light absorbing zone and first dielectric layer.
According to the described internal connection-wire structure of the embodiment of the invention, first, second above-mentioned light absorbing zone for example is a composite bed.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned dielectric layer and the material of second dielectric layer for example are the porousness advanced low-k materials.
The present invention also proposes a kind of internal connection-wire structure, and this internal connection-wire structure comprises a substrate, one first light absorbing zone, one first dielectric layer, one second light absorbing zone, a dual-damascene structure and one second dielectric layer.First light absorbing zone is disposed on the substrate, and has a conduction region in first light absorbing zone and the part substrate.First dielectric layer is disposed on first light absorbing zone.Second light absorbing zone is disposed on first dielectric layer.Dual-damascene structure is disposed in second light absorbing zone and first dielectric layer, and electrically connects with conduction region.Second dielectric layer is disposed on second light absorbing zone.First light absorbing zone and second light absorbing zone absorb ultraviolet light.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned light absorbing zone and the material of second light absorbing zone for example are nitrogen-containing compound, carbon compound or oxygenatedchemicals, as are silicon oxynitride.
According to the described internal connection-wire structure of the embodiment of the invention, first, second above-mentioned light absorbing zone is a composite bed.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned light absorbing zone and the thickness of second light absorbing zone for example be between
Between.
According to the described internal connection-wire structure of the embodiment of the invention, one deck etch stop layer can also be arranged, be disposed between first light absorbing zone and first dielectric layer.
According to the described internal connection-wire structure of the embodiment of the invention, one deck etch stop layer can also be arranged, be disposed between second light absorbing zone and second dielectric layer.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned dielectric layer and the material of second dielectric layer for example are the porousness advanced low-k materials.
The present invention also proposes a kind of manufacture method of internal connection-wire structure, at first, provides a substrate, and this substrate has a conduction region.Then, on substrate, form one deck first light absorbing zone.Afterwards, on first light absorbing zone, form one deck first dielectric layer.Next, carry out the first irradiation maturation stage., in first dielectric layer and first light absorbing zone in form dual-damascene structure, to electrically connect conduction region thereafter.Next, on first dielectric layer, form second light absorbing zone.Then, on second light absorbing zone, form second dielectric layer.Afterwards, carry out the second irradiation maturation stage.First light absorbing zone and second light absorbing zone absorb ultraviolet light.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned light absorbing zone and the material of second light absorbing zone are nitrogen-containing compound, carbon compound or oxygenatedchemicals for example, as silicon oxynitride.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, the thickness of above-mentioned light absorbing zone for example between
Between.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, can also and form first dielectric layer after first light absorbing zone forms before, formation one deck etch stop layer on first light absorbing zone.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, can also before forming, first light absorbing zone on substrate, form one deck etch stop layer.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, can also and form second dielectric layer after forming second light absorbing zone before, on second light absorbing zone, form one deck etch stop layer.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, can also after forming dual-damascene structure and before second light absorbing zone, on first dielectric layer, form one deck etch stop layer.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned light absorbing zone and second light absorbing zone for example are composite bed.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned irradiation maturation stage and the second irradiation maturation stage for example are ultraviolet light irradiation slaking method.
According to the manufacture method of the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned dielectric layer and the material of second dielectric layer for example are the porousness advanced low-k materials.
The present invention is because form one deck light absorbing zone between each dielectric layer in interconnect structure, utilize light absorbing zone can effectively absorb the characteristic of ultraviolet light, make and be arranged in the dielectric layer of lower level at illumination light curing process, can not be subjected to repeatedly the photocurable influence of ultraviolet lighting, change along with the increase of irradiation maturation process number of times with the physical property of avoiding dielectric layer, and then cause physical property difference to some extent between each layer dielectric layer.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is the graph of a relation of modulus/hardness (modulus/hardness) added value and the ultraviolet light irradiation slaking condition of dielectric material;
Figure 1B is the graph of a relation of dielectric constant (K) added value and the ultraviolet light irradiation slaking condition of dielectric material;
Fig. 1 C is the graph of a relation of the stress added value and the ultraviolet light irradiation slaking condition of dielectric material;
Fig. 2 A is the generalized section according to the intraconnections structure that one embodiment of the invention illustrated;
Fig. 2 B is the generalized section according to the internal connection-wire structure that another embodiment of the present invention illustrated;
Fig. 2 C is the generalized section according to the internal connection-wire structure that further embodiment of this invention illustrated;
Fig. 2 D is the generalized section according to the internal connection-wire structure that yet another embodiment of the invention illustrated;
Fig. 2 E is the generalized section according to the internal connection-wire structure that yet another embodiment of the invention illustrated;
Fig. 3 A is absorption coefficient and the variations in refractive index figure of different light absorbing zone materials under ultraviolet light according to the embodiment of the invention illustrated;
Fig. 3 B is the reflectance varies figure of different light absorbing zone materials under ultraviolet light according to the embodiment of the invention illustrated;
Fig. 4 A to Fig. 4 B is the making flow process profile according to the internal connection-wire structure that the embodiment of the invention illustrated.
The main element symbol description
200,400: substrate
202,402: conduction region
204,208,404,408: dielectric layer
206,406: dual-damascene structure
207,210,407,410: light absorbing zone
212,, 213,403,412: barrier layer
405,411: the irradiation maturation stage
Embodiment
Fig. 2 A is the generalized section according to the internal connection-wire structure that one embodiment of the invention illustrated.Please refer to Fig. 2 A, substrate 200 has conduction region 202, has for example formed dielectric layer (not illustrating) on the substrate 200.Conduction region 202 for example is a lead.Dielectric layer 204 is disposed on the substrate 200, and the material of dielectric layer 204 is as being the porousness advanced low-k materials, and its dielectric constant K is less than 4.Dual-damascene structure 206 is disposed in the dielectric layer 204, and electrically connects with the conduction region 202 of substrate 200, and wherein the material of dual-damascene structure 206 for example is a metal.Light absorbing zone 207 is disposed between substrate 200 and the dielectric layer 204.Dielectric layer 208 is disposed on the dielectric layer 204, and wherein the material of dielectric layer 208 for example is the porousness advanced low-k materials, and its dielectric constant K is less than 4.Light absorbing zone 210 is disposed between dielectric layer 204 and the dielectric layer 208, and covers dual-damascene structure 206.The material of light absorbing zone 207,210 for example is nitrogen-containing compound, carbon compound or oxygenatedchemicals, and wherein the preferably for example is a silicon oxynitride, and the thickness of light absorbing zone 207,210 for example between
Between.
Therefore, when the dielectric layer 208 that is positioned at the upper strata is accepted the slaking of ultraviolet light irradiation, the ultraviolet light that light absorbing zone 210,207 can absorb from the upper strata, dielectric layer 204 and the dielectric layer on the substrate 200 avoiding being positioned at lower floor are subjected to the slaking of ultraviolet light irradiation, its physical characteristic is affected, so that the physical characteristic of each layer dielectric layer produces the difference of certain degree.
In addition, please refer to Fig. 2 B, in another is implemented, also can between light absorbing zone 210 and dielectric layer 208, dispose one deck etch stop layer 212, and between light absorbing zone 207 and dielectric layer 204, dispose one deck etch stop layer 213.Etch stop layer 212,213 for example is a nitration case.Perhaps, please refer to Fig. 2 C, in another embodiment, etch stop layer 212 also can be configured between light absorbing zone 210 and the dielectric layer 204, and etch stop layer 213 also can be configured between light absorbing zone 207 and the substrate 200.
Fig. 2 D is the generalized section according to the internal connection-wire structure that yet another embodiment of the invention illustrated.Please refer to Fig. 2 D, in this internal connection-wire structure, be that conduction region 202 is arranged in light absorbing zone 207 and part substrate 200, and dual-damascene structure 206 is disposed in light absorbing zone 210 and the dielectric layer 204 with the difference of Fig. 2 A.
Similarly, please refer to Fig. 2 E, in another embodiment, also can between light absorbing zone 207 and dielectric layer 204, dispose etch stop layer 213.In addition, etch stop layer 212 also can be disposed between light absorbing zone 210 and the dielectric layer 208.
What deserves to be mentioned is, in the above-described embodiment, light absorbing zone 207,210 also can be a composite bed, this composite bed is made up of the rete that more than two layers ultraviolet light is had different traps, so that the light absorbing zone 207,210 in the internal connection-wire structure of the present invention can have better assimilation effect to ultraviolet light.
Fig. 3 A is absorption coefficient and the variations in refractive index figure of different light absorbing zone materials under ultraviolet light according to the embodiment of the invention illustrated.Please refer to Fig. 3 A, respectively with the material of 5 kinds of light absorbing zones: silicon nitride (SiN), ultraviolet light silicon nitride (UVSiN), silicon oxynitride (SiON), nitrogen-doped silicon carbide (Nitrogen-Doped Carbide, NDC) (Oxygen-Doped Carbide ODC) absorbs and the refraction test ultraviolet light with oxygen-doped carborundum.By can obviously learning among the figure, silicon oxynitride between 300nm～400nm, has best absorption and refraction at wavelength, therefore is that the light absorbing zone of material can present best effect with the silicon oxynitride.
Fig. 3 B is the reflectance varies figure of different light absorbing zone materials under ultraviolet light according to the embodiment of the invention illustrated.Please refer to Fig. 3 B, same material with 5 kinds of light absorbing zones: silicon nitride, ultraviolet light silicon nitride, silicon oxynitride, NDC and ODC carry out the test of reflectivity to ultraviolet light.Equally by can obviously learning among the figure, between 300nm～400nm, be that the light absorbing zone of material can present best effect with the silicon oxynitride at wavelength.
Fig. 4 A to Fig. 4 B is the making flow process profile according to the internal connection-wire structure that the embodiment of the invention illustrated.Please refer to Fig. 4 A, at first, provide substrate 400, for example be formed with dielectric layer (not illustrating) on the substrate 400.Substrate 400 has conduction region 402, and conduction region 402 for example is a lead.Then, on substrate 400, form light absorbing zone 407 and etch stop layer 413 in regular turn.The material of light absorbing zone 407 for example is nitrogen-containing compound, carbon compound or oxygenatedchemicals, and wherein the preferably for example is a silicon oxynitride, and the thickness of light absorbing zone 407 for example between
Between.Etch stop layer 413 for example is a nitration case.Then, form dielectric layer 404 on etch stop layer 413, the material of dielectric layer 404 for example is the porousness advanced low-k materials, and its dielectric constant K is less than 4.Then, carry out irradiation maturation stage 405, with slaking dielectric layer 404.Irradiation maturation stage 405 for example is a ultraviolet light irradiation slaking method.
Then, please refer to Fig. 4 B, form dual-damascene structure 406 in dielectric layer 404, dual-damascene structure 406 electrically connects conduction region 402.Next, on dielectric layer 404, form light absorbing zone 410.The material of light absorbing zone 410 for example is nitrogen-containing compound, carbon compound or oxygenatedchemicals, and wherein the preferably for example is a silicon oxynitride, and the thickness of light absorbing zone 410 for example between
Between.Then, on light absorbing zone 410, form etch stop layer 412 and dielectric layer 408 in regular turn.The material of dielectric layer 408 for example is the porousness advanced low-k materials, and its dielectric constant K is less than 4.Etch stop layer 412 for example is a nitration case.Afterwards, carry out irradiation maturation stage 411, with irradiation slaking dielectric layer 408.Irradiation maturation stage 411 for example is a ultraviolet light irradiation slaking method.
In addition, in another embodiment, etch stop layer 413 can be formed on earlier on the substrate 400 before light absorbing zone 407 forms.In addition, etch stop layer 412 also can be formed on the dielectric layer 404 before light absorbing zone 410 forms.
It should be noted that, in above-mentioned steps, because be formed with one deck light absorbing zone 410 on the dielectric layer 404, therefore when dielectric layer 408 carries out irradiation maturation stage 411, light absorbing zone 410 can absorb the ultraviolet light from the upper strata, avoids dielectric layer 404 to be subjected to UV-irradiation and carries out the irradiation slaking once more.In addition, above-mentioned barrier layer 412 also can be formed on earlier on the dielectric layer 404 before forming light absorbing zone 410, forms light absorbing zone 410 and dielectric layer 408 again on barrier layer 412 in regular turn.In addition, light absorbing zone 410 also can be made up of the rete that more than two layers ultraviolet light is had different traps, so that light absorbing zone 410 can have better assimilation effect to ultraviolet light.
In sum, be formed with one deck light absorbing zone in the internal connection-wire structure of the present invention between each dielectric layer, this light absorbing zone can absorb the ultraviolet light from the upper strata, therefore can avoid being positioned at the dielectric layer of lower level after carrying out repeatedly the irradiation maturation process, produce ultraviolet light irradiation slaking effect accumulation phenomenon, and influence the physical characteristic of each dielectric layer, cause the physical characteristic of each dielectric layer to have excessive difference.
Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, any those skilled in the art, under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (33)
1. internal connection-wire structure comprises:
One substrate, this substrate has a conduction region;
One first dielectric layer is disposed on this substrate;
One first light absorbing zone is disposed between this substrate and this first dielectric layer;
One dual-damascene structure is disposed in this first dielectric layer and this first light absorbing zone, and this dual-damascene structure and the electric connection of this conduction region;
One second dielectric layer is disposed on this first dielectric layer; And
One second light absorbing zone is disposed between this first dielectric layer and this second dielectric layer,
Wherein, this first light absorbing zone and this second light absorbing zone absorb ultraviolet light.
2. internal connection-wire structure as claimed in claim 1, wherein the material of this first light absorbing zone and this second light absorbing zone comprises nitrogen-containing compound, carbon compound or oxygenatedchemicals.
3. internal connection-wire structure as claimed in claim 2, wherein the material of this first light absorbing zone and this second light absorbing zone comprises silicon oxynitride.
4. internal connection-wire structure as claimed in claim 1, wherein the thickness of this first light absorbing zone between
Between.
5. internal connection-wire structure as claimed in claim 1, wherein the thickness of this second light absorbing zone between
Between.
6. internal connection-wire structure as claimed in claim 1 also comprises an etch stop layer, is disposed between this first light absorbing zone and this first dielectric layer.
7. internal connection-wire structure as claimed in claim 1 also comprises an etch stop layer, is disposed between this first light absorbing zone and this substrate.
8. internal connection-wire structure as claimed in claim 1 also comprises an etch stop layer, is disposed between this second light absorbing zone and this second dielectric layer.
9. internal connection-wire structure as claimed in claim 1 also comprises an etch stop layer, is disposed between this second light absorbing zone and this first dielectric layer.
10. internal connection-wire structure as claimed in claim 1, wherein this first light absorbing zone is a composite bed.
11. internal connection-wire structure as claimed in claim 1, wherein this second light absorbing zone is a composite bed.
12. internal connection-wire structure as claimed in claim 1, wherein the material of this first dielectric layer and this second dielectric layer comprises the porousness advanced low-k materials.
13. an internal connection-wire structure comprises:
One substrate;
One first light absorbing zone is disposed on this substrate, and has a conduction region in this first light absorbing zone and this substrate of part;
One first dielectric layer is disposed on this first light absorbing zone;
One second light absorbing zone is disposed on this first dielectric layer;
One dual-damascene structure is disposed in this second light absorbing zone and this first dielectric layer, and this dual-damascene structure and the electric connection of this conduction region; And
One second dielectric layer is disposed on this second light absorbing zone,
Wherein, this first light absorbing zone and this second light absorbing zone absorb ultraviolet light.
14. internal connection-wire structure as claimed in claim 13, wherein the material of this first light absorbing zone and this second light absorbing zone comprises nitrogen-containing compound, carbon compound or oxygenatedchemicals.
15. internal connection-wire structure as claimed in claim 14, wherein the material of this first light absorbing zone and this second light absorbing zone comprises silicon oxynitride.
16. internal connection-wire structure as claimed in claim 13, wherein the thickness of this first light absorbing zone and this second light absorbing zone between
Between.
17. internal connection-wire structure as claimed in claim 13 also comprises an etch stop layer, is disposed between this first light absorbing zone and this first dielectric layer.
18. internal connection-wire structure as claimed in claim 13 also comprises an etch stop layer, is disposed between this second light absorbing zone and this second dielectric layer.
19. internal connection-wire structure as claimed in claim 13, wherein this first light absorbing zone is a composite bed.
20. internal connection-wire structure as claimed in claim 13, wherein this second light absorbing zone is a composite bed.
21. internal connection-wire structure as claimed in claim 13, wherein the material of this first dielectric layer and this second dielectric layer comprises the porousness advanced low-k materials.
22. the manufacture method of an internal connection-wire structure comprises:
One substrate is provided, and this substrate has a conduction region;
On this substrate, form one first light absorbing zone;
On this first light absorbing zone, form one first dielectric layer;
Carry out one first irradiation maturation stage;
In this first dielectric layer and this first light absorbing zone, form a dual-damascene structure, to electrically connect this conduction region;
On this first dielectric layer, form one second light absorbing zone;
On this second light absorbing zone, form one second dielectric layer; And
Carry out one second irradiation maturation stage,
Wherein, this first light absorbing zone and this second light absorbing zone absorb ultraviolet light.
23. the manufacture method of internal connection-wire structure as claimed in claim 22, wherein the material of this first light absorbing zone and this second light absorbing zone comprises nitrogen-containing compound, carbon compound or oxygenatedchemicals.
24. the manufacture method of internal connection-wire structure as claimed in claim 23, wherein the material of this first light absorbing zone and this second light absorbing zone comprises silicon oxynitride.
25. the manufacture method of internal connection-wire structure as claimed in claim 22, wherein the thickness of this first light absorbing zone and this second light absorbing zone between
Between.
26. the manufacture method of internal connection-wire structure as claimed in claim 22 also is included in and forms behind this first light absorbing zone and before forming this first dielectric layer, form an etch stop layer on this first light absorbing zone.
27. the manufacture method of internal connection-wire structure as claimed in claim 22, also be included in form this first light absorbing zone before, on this substrate, form an etch stop layer.
28. the manufacture method of internal connection-wire structure as claimed in claim 22 also is included in and forms behind this second light absorbing zone and before forming this second dielectric layer, form an etch stop layer on this second light absorbing zone.
29. the manufacture method of internal connection-wire structure as claimed in claim 22 also is included in and forms behind this dual-damascene structure and before forming this second light absorbing zone, form an etch stop layer on this first dielectric layer.
30. the manufacture method of internal connection-wire structure as claimed in claim 22, wherein this first light absorbing zone is a composite bed.
31. the manufacture method of internal connection-wire structure as claimed in claim 22, wherein this second light absorbing zone is a composite bed.
32. the manufacture method of internal connection-wire structure as claimed in claim 22, wherein this first irradiation maturation stage and this second irradiation maturation stage comprise ultraviolet light irradiation slaking method.
33. the manufacture method of internal connection-wire structure as claimed in claim 22, wherein the material of this first dielectric layer and this second dielectric layer comprises the porousness advanced low-k materials.
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| CNB2005101184959A CN100466247C (en) | 2005-10-27 | 2005-10-27 | Internal connection wire structure and its manufacturing method |
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|---|---|---|---|---|
| US6221761B1 (en) * | 1999-12-20 | 2001-04-24 | United Microelectronics Corp. | Method of stabilizing anti-reflection coating layer |
| US6319809B1 (en) * | 2000-07-12 | 2001-11-20 | Taiwan Semiconductor Manfacturing Company | Method to reduce via poison in low-k Cu dual damascene by UV-treatment |
| US20040080050A1 (en) * | 2002-10-24 | 2004-04-29 | Lam Research Corporation | Method and apparats for detecting endpoint during plasma etching of thin films |
| US20050014362A1 (en) * | 2002-06-04 | 2005-01-20 | Bang-Chien Ho | Dual damascene process |
| US20050042889A1 (en) * | 2001-12-14 | 2005-02-24 | Albert Lee | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
-
2005
- 2005-10-27 CN CNB2005101184959A patent/CN100466247C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6221761B1 (en) * | 1999-12-20 | 2001-04-24 | United Microelectronics Corp. | Method of stabilizing anti-reflection coating layer |
| US6319809B1 (en) * | 2000-07-12 | 2001-11-20 | Taiwan Semiconductor Manfacturing Company | Method to reduce via poison in low-k Cu dual damascene by UV-treatment |
| US20050042889A1 (en) * | 2001-12-14 | 2005-02-24 | Albert Lee | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
| US20050014362A1 (en) * | 2002-06-04 | 2005-01-20 | Bang-Chien Ho | Dual damascene process |
| US20040080050A1 (en) * | 2002-10-24 | 2004-04-29 | Lam Research Corporation | Method and apparats for detecting endpoint during plasma etching of thin films |
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| CN1956185A (en) | 2007-05-02 |
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Effective date of registration: 20180103 Address after: No. 88 Lianhua Avenue, Jinjiang City, Quanzhou, Fujian Patentee after: Fujian Jincheng integrated circuit Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: United Microelectronics Corporation |
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