CN100463364C - Resonator of microelectronic mechanical system and its production - Google Patents
Resonator of microelectronic mechanical system and its production Download PDFInfo
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- CN100463364C CN100463364C CNB2006100128496A CN200610012849A CN100463364C CN 100463364 C CN100463364 C CN 100463364C CN B2006100128496 A CNB2006100128496 A CN B2006100128496A CN 200610012849 A CN200610012849 A CN 200610012849A CN 100463364 C CN100463364 C CN 100463364C
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Abstract
The resonator thereof comprises a substrate, a resonance structure, an anchorage device for securing the resonance structure, an electrode and an output electrode. The resonance structure is secured in the substrate using the anchorage device; the input electrode is connected to the resonance structure using a variable parallel plate capacitor; the output electrode is connected to the resonance structure using a variable parallel plate capacitor. The substrate and the resonance structure are made of one kind of material from silicon, germanium, carbide and piezoelectric ceramic. The resonator can be integrated with one kind of component from micro-electronic chip, bipolar transistor, MOS component, CMOS component, MOSFET, JFET and IGFET.
Description
Technical field
The present invention relates to a kind of resonator device based on micro-electronic mechanical system technique in the wireless communication field and preparation method thereof, particularly relate to a kind of resonator of microelectronic mechanical system and preparation method thereof.
Background technology
Communication science is the foundation stone of high-tech information-intensive society, also is the core of high-tech information industry.Radio communication is to realize one of topmost method in the communication science, and the quality of wireless communication technology has directly determined the quality and the performance of communication system.Wireless communication system mainly is made up of input modulator, transmitting apparatus, receiving equipment, output demodulator and channel, and the reliability of its information communication and validity depend mainly on precision, phase noise and the stability of a system of the frequency oscillator of system.Input modulator, transmitting apparatus, receiving equipment and output demodulator all need to utilize reference-frequency oscillator to carry out carrier frequency mixing and frequency modulation(FM).Resonance device in the current frequency oscillator mainly is to realize that by the crystal resonator of high quality factor and surface wave acoustic resonator their shortcoming is that volume is big, and the energy consumption height is difficult to integrated.Yet development along with aeronautical and space technology and mobile communication, miniaturization of devices has become the inexorable trend of Wireless Telecom Equipment development, this just makes that the shortcoming of crystal resonator and surface wave acoustic resonator is outstanding all the more, and a kind of invention of novel resonator is ready to appear.
Summary of the invention
Defective and technical deficiency that purpose of the present invention is exactly at the crystal resonator and surface wave acoustic resonator volume is big, energy consumption is high, it is integrated to be difficult to, be difficult to miniaturization provide a kind of and have had that volume is little, energy consumption is low, quality factor are high, it is integrated to be easy to, noise is little, temperature drift is little, stability is high, cost is low, output is big, be easy to resonator of microelectronic mechanical system of industrialization characteristics and preparation method thereof.
The object of the present invention is achieved like this: the microelectron-mechanical resonator mainly is made up of following four parts, substrate, the resonant structure that carries out mechanical oscillation, the anchoring device that is used for fixing resonant structure, capacitor type output and input electrode.Its syndeton main points are: the resonant structure that carries out mechanical oscillation relies on anchoring device to be fixed on the substrate, and input electrode relies on variable plane-parallel capacitor to link to each other with resonant structure, and output electrode relies on variable plane-parallel capacitor to link to each other with resonant structure.
The manufacture method of described resonator is: substrate and resonant structure are made with silicon, germanium, carbide, the one kind of material of piezoelectric ceramic respectively; Described resonator can one of them carries out integrated with microelectronic chip, bipolar transistor, metal oxide semiconductor device, complementary mos device, field-effect transistor, technotron device, insulation coral field effect transistor.
Advantage of the present invention is:
1, volume is little, and energy consumption is low, and the quality factor height is easy to integratedly, and noise is little, and temperature drift is little, and stability is high, and cost is low, and output is big, is easy to industrialization.
2, can be integrated in the chip owing to the present invention, so high-frequency signal is little to external radiation, and is easy to shielding, can reduce signal radiation harm significantly.
3, it is extensive to make the material that this device mechanical oscillation structure can use, and comprising: silicon materials and silicide material (monocrystalline silicon, polysilicon, non-crystalline silicon, silica, silicon nitride); Diamond (single crystal carbon, polycrystalline carbon, single-crystal diamond, polycrystalline diamond, noncrystal diamond); Carborundum; Carbon nano-tube; Germanium material and germanide material (monocrystalline germanium, polycrystalline germanium, noncrystal germanium, germanium oxide, germanium nitride); Aluminum and aluminide material (metallic aluminium, aluminium nitride, aluminium oxide); Nickel material and nickel compound material (metallic nickel, nickel oxide, nickel oxide); Chromium material and chromium compounds material (crome metal, chromium nitride, chromium oxide); Piezoceramic material; Ferroelectric ceramic material; Alloy material; Thin-film material; Polymeric material.
4, can carry out integratedly with multiple systems or device, wherein have: microelectronic chip or bipolar transistor devices; Metal oxide semiconductor device; Complementary mos device; FET device; The junction field tube device; Insulation coral field effect transistor.
5, this device can be integrated in the multiple material, comprising: metal, nonmetal, metallic compound, metal oxide, metal nitride, nonmetallic compound, nonmetal oxide, non-metal nitride, conductor, semiconductor, insulator, crystal, noncrystal, ceramic, thin-film material, alloy material, carbon nano-tube, polymer.
6, this device can work in a vacuum, in the air, in the nitrogen, in the inert gas.
7, this method is safe in utilization, effective, economical, reasonable.
The explanation of accompanying drawing drawing
Fig. 1 is a structured flowchart of the present invention.
Fig. 2 is circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with drawings and Examples in detail the present invention is described in detail.
Hardware of the present invention is made up of substrate, the resonant structure that carries out mechanical oscillation, the anchoring device that is used for fixing resonant structure, capacitor type output and input electrode.Its syndeton is seen accompanying drawing 1: the resonant structure that carries out mechanical oscillation relies on anchoring device to be fixed on the substrate, and input electrode relies on variable plane-parallel capacitor to link to each other with resonant structure, and output electrode relies on variable plane-parallel capacitor to link to each other with resonant structure.
Concrete embodiment such as the accompanying drawing 2 of connecting: in resonator and interlock circuit IC, 8 pin of IC1 are connected with 12 pin of IC2,3 pin of IC1 are connected with 14 pin of IC2, and 5 pin of IC1 are connected with 15 pin of IC2, and 13 pin of IC2 are connected with 8 pin of IC3,3 pin of IC2 are connected with 7 pin of IC3,10 pin of IC2 are connected with positive source, and 5 pin of IC2 are connected with power cathode, and 7 pin of IC3 are connected with 5 pin of IC3,2 pin of IC3 and IC1 connect dc power cathode, and 6 pin of IC3 and IC1 connect dc power anode.
Preparation method of the present invention is: (1) preparation substrate (2) deep reaction ion etching obtains minim gap (3) and adopts micromachined and nanometer technology to obtain the unsettled resonant structure of part (4) outfit output and input electrode.Substrate is made with silicon, germanium, carbide or piezoceramic material.The resonant structure of mechanical oscillation is made with silicon, germanium, carbide or piezoceramic material.Resonator and microelectronic chip, bipolar transistor, metal oxide semiconductor device, complementary mos device, field-effect transistor, technotron device or insulation coral field effect transistor are carried out integrated.Resonator of microelectronic mechanical system is operated in vacuum, air, nitrogen or the inert gas.
The course of work of the present invention is as follows: drive at resonant structure and electrode two ends making alive, input signal on the input electrode, output signal on the output electrode, when the signal frequency of input electrode during near the mechanical oscillation frequency of resonant structure, resonant structure can resonate, and causes the variation of minim gap, causes the variation of input variable capacitance and output variable capacitance, cause the variation of device whole impedance, thereby on output electrode, obtain the oscillator signal of needs.
Claims (2)
1. resonator of microelectronic mechanical system, it is made up of substrate, the resonant structure that carries out mechanical oscillation, the anchoring device that is used for fixing resonant structure, capacitor type output and four parts of input electrode, it is characterized in that, the resonant structure that carries out mechanical oscillation is fixed on the substrate with anchoring device, input electrode is connected with variable plane-parallel capacitor with resonant structure, and output electrode is connected with variable plane-parallel capacitor with resonant structure.
2. the preparation method of a resonator of microelectronic mechanical system as claimed in claim 1 is characterized in that, substrate and resonant structure are made with silicon, germanium, carbide, the one kind of material of piezoelectric ceramic respectively; Described resonator can one of them carries out integrated with microelectronic chip, bipolar transistor, metal oxide semiconductor device, complementary mos device, field-effect transistor, technotron device, insulation coral field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100128496A CN100463364C (en) | 2006-06-16 | 2006-06-16 | Resonator of microelectronic mechanical system and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100128496A CN100463364C (en) | 2006-06-16 | 2006-06-16 | Resonator of microelectronic mechanical system and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1897460A CN1897460A (en) | 2007-01-17 |
| CN100463364C true CN100463364C (en) | 2009-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100128496A Expired - Fee Related CN100463364C (en) | 2006-06-16 | 2006-06-16 | Resonator of microelectronic mechanical system and its production |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270975B (en) | 2010-06-04 | 2013-10-09 | 上海丽恒光微电子科技有限公司 | Crystal oscillator and manufacturing method |
| FI123933B (en) * | 2011-05-13 | 2013-12-31 | Teknologian Tutkimuskeskus Vtt | A micromechanical device and method for its design |
| TWI566446B (en) | 2013-11-20 | 2017-01-11 | 財團法人工業技術研究院 | Surface elastic wave generator, transceiver, and generation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2291752Y (en) * | 1997-05-06 | 1998-09-16 | 无锡宝通电子有限公司 | Chip-type ceramic resonant device |
| US6621134B1 (en) * | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
| WO2005011116A1 (en) * | 2003-07-25 | 2005-02-03 | Sony Corporation | Mems type resonator, process for fabricating the same and communication unit |
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2006
- 2006-06-16 CN CNB2006100128496A patent/CN100463364C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2291752Y (en) * | 1997-05-06 | 1998-09-16 | 无锡宝通电子有限公司 | Chip-type ceramic resonant device |
| US6621134B1 (en) * | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
| WO2005011116A1 (en) * | 2003-07-25 | 2005-02-03 | Sony Corporation | Mems type resonator, process for fabricating the same and communication unit |
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| Publication number | Publication date |
|---|---|
| CN1897460A (en) | 2007-01-17 |
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Granted publication date: 20090218 Termination date: 20110616 |