CN100461495C - Green diode with optical microcavity structure and production thereof - Google Patents
Green diode with optical microcavity structure and production thereof Download PDFInfo
- Publication number
- CN100461495C CN100461495C CNB2006100124739A CN200610012473A CN100461495C CN 100461495 C CN100461495 C CN 100461495C CN B2006100124739 A CNB2006100124739 A CN B2006100124739A CN 200610012473 A CN200610012473 A CN 200610012473A CN 100461495 C CN100461495 C CN 100461495C
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive glass
- electro
- diphenyl
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The preparation method takes 8-hydroxyquinoline, N, N'-bis(1-napgthel)-N, N'-diphenyl-1, 1'-dipheny-4, 4'-diamine (NPD), lithium fluoride, aluminum and gold as raw materials, and takes Salicylidenc-Ethylenediamine Zinc as a materials for luminescing green light. The conducting glass tin indium oxide is taken as the substrate of light emitting device. The absolute ethyl alcohol, toluene, acetone, and cleaning agent is taken as detergent. The diluted hydrochloric acid is taken as etching agent. The optical micro-cavity structure of two light-emitting units is adopted, namely 15 layers structure. Through etching conductive glass, cleaning with detergent by ultrasound, drying in vacuum, finely selecting chemical materials, finally the green light emitting diode is acquired. Both thicknesses of potential barrier and potential well in the optical micro-cavity are 3nm+/-0.5nm. The lithium fluoride/aluminum/gold are used to make intermediate layer with a thickness of 8nm+/-0.5nm between cathode and anode. The voltages in each layer are evenly and consistent. The green light emitting diode thereof has high luminous efficiency and better green color purity, and the color coordinate is x=0.3246, y=0.5386.
Description
Technical field
The present invention relates to a kind of green diode and preparation method, belong to organometallic complex electroluminescent device and preparation method's technical field with optical microcavity structure.
Background technology
Since the 1980s, organic electroluminescent LED emerged, significant progress has been arranged technically, because it has high brightness, high efficiency, low-voltage, advantages such as DC driven, be with a wide range of applications at electronics and luminous field, because its vibration sideband and the inhomogeneous broad effect that adds, its organic molecule, the spectral half width of high molecular polymer luminescent material is greater than 80nm, thereby utilize red, green, utilance is very low in the synthetic preparation of the blue three primary colors color monitor, the rare-earth complexes luminous material of narrow emission, device brightness is little, luminous efficiency and stability are lower, not as the device with the broadband emission material preparation.
In the organic electroluminescent diode apparatus of existing preparation green light, the normal single heterojunction structure that adopts, wherein active area in electron transfer layer near in the very narrow scope of hole transmission layer, because how sub the hole is, in electron transfer layer, unavoidably there is unnecessary hole not participate in radiation recombination, and the unnecessary hole in electron transfer layer is the main inner reason that causes device aging, the double quantum well structure is significantly improved this, but potential barrier and potential well are cross layered, luminosity, luminous efficiency is all not ideal enough, can't satisfy the needs of high-grade green glow two machine pipe luminosity.
Summary of the invention
Goal of the invention
Purpose of the present invention is exactly at disadvantages of background technology, design a kind of diode of novel green light, adopt optical microcavity structure, make the diode structure layer reach 15 layers, set up a positive pole and negative pole layer in the centre of structure sheaf, make structure sheaf form two optical microcavities, significantly to improve the luminosity of diode, efficient, with salicylidene ethylenediamine zinc green luminescent material is potential well and luminescent layer, with 8-hydroxyquinoline aluminum is barrier layer and electron transfer layer, with lithium fluoride/aluminium/golden anode and cathode intercalation is half-reflecting mirror, with lithium fluoride/aluminium is that completely reflecting mirror is made negative electrode, constitute two optical microcavity structures, to reach the brightness that improves green diode, intensity, efficient, green glow is pure, the purpose that greenness is high.
Technical scheme
The chemical substance material that the present invention uses is: salicylidene ethylenediamine zinc, 8-hydroxyquinoline aluminum, lithium fluoride, aluminium, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD), gold, deionized water, watery hydrochloric acid, toluene, ethanol, acetone, detergent, electro-conductive glass, mask template, adhesive tape, its combination matching is: with gram, milliliter, millimeter is unit of measurement
Salicylidene ethylenediamine zinc: ZnL
21g ± 0.1g
8-hydroxyquinoline aluminum: Alq
32g ± 0.1g
Lithium fluoride: LiF 0.1g ± 0.01g
Aluminium: Al 2g ± 0.1g
Gold: Au 0.5g ± 0.01g
N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD): 0.5g ± 0.01g
Absolute ethyl alcohol: CH
3CH
2OH 200ml ± 5ml
Toluene: C
7H
8200ml ± 5ml
Acetone: CH
3COCH
3200ml ± 5ml
Watery hydrochloric acid: HCl 50ml ± 5ml
Detergent: 50ml ± 5ml
Electro-conductive glass: tin indium oxide ITO 40 * 40 * 5mm water white transparency 60 Ω/
Mask template: 40 * 40 * 5mm plastic cement flexible material
Adhesive tape: 40 * 2 * 0.08mm
Described green diode is the optical microcavity stepped construction, totally 15 layers, the 1st layer is anode layer, it is conductive glass layer, the 1st layer of top is the 2nd layer, it is hole transmission layer, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) layer, the 2nd layer of top is the 3rd layer, i.e. oxine aluminium lamination, and the 3rd layer of top is the 4th layer, it is salicylidene ethylenediamine zinc layer, the 4th layer of top is the 5th layer, i.e. oxine aluminium lamination, and the 5th layer of top is the 6th layer, it is salicylidene ethylenediamine zinc layer, the 6th layer of top is the 7th layer, i.e. oxine aluminium lamination, and the 7th layer of top is the 8th layer, the i.e. male-female utmost point intercalation of forming by lithium fluoride/aluminium/gold, the 8th layer of top is the 9th layer, i.e. hole transmission layer, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) layer, the 9th layer of top is the 10th layer, be the oxine aluminium lamination, the 10th layer of top is 11th layer, i.e. salicylidene ethylenediamine zinc layer, 11th layer top is the 12nd layer, be the oxine aluminium lamination, the 12nd layer of top is the 13rd layer, i.e. salicylidene ethylenediamine zinc layer, the 13rd layer of top is the 14th layer, be the oxine aluminium lamination, the 14th layer of top is the 15th layer, i.e. the cathode layer of being made up of lithium fluoride/aluminium; 8 layers of intercalation of the 1st layer of electro-conductive glass anode layer to the are formed optical microcavity I, form optical microcavity II for the 8th layer to the 15th layer, the 8th layer of male-female utmost point intercalation promptly is the cathode layer of optical microcavity I, is the anode layer of optical microcavity II again that the 15th layer is the cathode layer of optical microcavity II.
Preparation method of the present invention is as follows:
(1) selected chemical substance
To carry out selectedly to the required chemical substance material fine powder of preparation, and carry out purity, fineness, precision control:
8-hydroxyquinoline aluminum: 99.995%
Salicylidene ethylenediamine zinc: 99.95%
Aluminium: 99.9%
Lithium fluoride: 99.95%
Gold: 99.95%
Deionized water: 99.995%
Absolute ethyl alcohol: 99.7%
Toluene: 99.5%
Acetone: 99.5%
Watery hydrochloric acid: concentration 20%
Detergent: concentration 20%
Electro-conductive glass: tin indium oxide ITO, side's resistance 10 Ω/-60 Ω/ transmissivity 80%-88% water white transparency
Mask template: 40 * 40 * 5mm plastic cement flexible material
Adhesive tape: 40 * 2 * 0.08mm
Solid state chemistry material fineness of powder≤300 orders.
(2) etching conductive glass
The electric conductivity of testing conductive glass, determine that conducting surface is positive, symmetry is pasted two adhesive tape 40 * 2 * 0.08mm on conducting surface top, and the electro-conductive glass of pasting adhesive tape is placed beaker, adds watery hydrochloric acid 50ml ± 5ml then, corrode and etching, time is 2min ± 0.2min, and the electro-conductive glass after the etching is wiped erosion electro-conductive glass obverse and reverse repeatedly with white soft fibre material, makes its cleaning, throw off the adhesive tape on the electro-conductive glass then, in order to cleaning.
(3) make mask aperture
Make 6 equidistant rectangular through-hole pattern hole 2 * 2 * 5mm in the last symmetry cutting of mask template 40 * 40 * 5mm
(4) clean electro-conductive glass
Electro-conductive glass after the etching is placed beaker, be placed in the ultrasonic cleaner and clean, put absolute ethyl alcohol 100ml ± 5ml, toluene 100ml ± 5ml, acetone 100ml ± 5ml respectively successively in beaker, each scavenging period is respectively 15min ± 1min.
(5) clean mask template, mask aperture
The mask template is placed beaker, beaker is placed ultrasonic cleaner, put into absolute ethyl alcohol, toluene, acetone successively respectively in beaker, carry out ultrasonic cleaning, order is:
Absolute ethyl alcohol: 100ml ± 5ml time 12min ± 1min
Toluene: 100ml ± 5ml time 12min ± 1min
Acetone: 100ml ± 5ml time 12min ± 1min
(6) vacuum drying treatment
Place vacuum drying chamber to carry out dried electro-conductive glass, mask template after cleaning, baking temperature is 30 ℃ ± 2 ℃, and the time is 5min ± 0.2min
(7) put electro-conductive glass, mask template
Etching, cleaning, dried electro-conductive glass, mask template are placed on the star formula basal disc platform in the vacuum evaporation stove, and mask aperture is aimed at the conducting surface of electro-conductive glass, pastes fixing with adhesive tape.
(8) vacuum ionic bombardment
Ultrasonic cleaning, dried electro-conductive glass, mask template are placed the vacuum evaporation stove, close the vacuum evaporation stove, open oil-sealed rotary pump, when the pressure in the vacuum evaporation stove during at 15Pa ± 5Pa, open vacuum evaporation stove ion bombardment current controller, with 50mA electric current bombardment induced conductivity glass, mask template 10min ± 1min, improve the work function of anode.
(9) vacuum evaporation, vapour deposition, form conversion, film growth, formed product
With the electro-conductive glass after the ion bombardment, the mask template places the centre position of star formula basal disc platform and fixes, chemical substance salicylidene ethylenediamine zinc 0.1g ± 0.1g that preparation is required, 8-hydroxyquinoline aluminum 2g ± 0.1g, lithium fluoride 0.1g ± 0.01g, aluminium 2g ± 0.1g, gold 0.5g ± 0.01g, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) 0.5g ± 0.01g places the evaporation source crucible in the vacuum furnace respectively, open oil-sealed rotary pump, molecular pump, when pressure≤0.002Pa, oven is opened, temperature rises to 50 ℃ ± 2 ℃, prepares evaporation;
Open quartzy calibrator, by the deposit film thickness on the quartz probe detection electro-conductive glass;
Open star formula basal disc platform in the evaporation stove, electro-conductive glass is rotated with platform, star formula basal disc platform velocity of rotation is 20r/min, the used chemical substance of conductive film growth is carried out the gas phase fission and is transformed under the heating in vacuum state, transform to gaseous state by solid-state, the material powder of gaseous state is molecularity, solidifies the back and becomes solid-state conductive film, carries out as follows:
Carry out the evaporation moulding in the vacuum evaporation stove, the vacuum evaporation furnace temperature is 50 ℃ ± 2 ℃;
The 1st step: connect evaporation source N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) powder crucible, make it be warming up to 600 ℃ ± 12 ℃, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) gaseous molecular deposition growing on the 1st layer of electro-conductive glass becomes the 2nd layer, both hole transmission layers, thickness is 20nm ± 0.5nm
The 2nd step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 2nd layer becomes the 3rd layer, i.e. barrier layer, and thickness is 3nm ± 0.5nm
The 3rd step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 3rd layer becomes the 4th layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 4th step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 4th layer becomes the 5th layer, both barrier layers, and thickness is 3nm ± 0.5nm
The 5th step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 5th layer becomes the 6th layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 6th step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 6th layer becomes the 7th layer, i.e. barrier layer and electron transfer layer, and thickness is 30nm ± 0.5nm
The 7th step: connect evaporation source LiF, Al and Au powder crucible respectively, make its be warming up to 900 ℃ ± 12 ℃, 800 ℃ ± 12 ℃, 1200 ℃ ± 12 ℃,, the gaseous molecular of LiF, Al and Au deposition growing on the 7th layer becomes the 8th layer, i.e. the moon-anode intercalation, and thickness is 8nm ± 0.5nm
The 8th step: connect evaporation source N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) powder crucible, make it be warming up to 600 ℃ ± 12 ℃, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) gaseous molecular deposition growing on the 8th layer becomes the 9th layer, both hole transmission layers, thickness is 20nm ± 0.5nm
The 9th step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 9th layer becomes the 10th layer, i.e. barrier layer, and thickness is 3nm ± 0.5nm
The 10th step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 10th layer becomes 11th layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 11st step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on 11th layer becomes the 12nd layer, i.e. barrier layer, and thickness is 3nm ± 0.5nm
The 12nd step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 12nd layer becomes the 13rd layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 13rd step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 13rd layer becomes the 14th layer, i.e. barrier layer, and thickness is 30nm ± 0.5nm
The 14th step: connect evaporation source LiF and Al powder crucible respectively, make it be warming up to 900 ℃ ± 12 ℃, 800 ℃ ± 12 ℃, the gaseous molecular of LiF and Al deposition growing on the 14th layer becomes 15 layers, i.e. cathode layer, and thickness is that 30nm ± 0.5nm 1-8 layer is optical microcavity I
The 8-15 layer is optical microcavity II
Vacuum evaporation deposition growing form is: solid-state (S)
Gaseous state (V)
Solid-state (S) is the conversion of physics attitude;
In preparation process, quartzy thickness meter probe is omnidistance to be opened, and measures the thickness of each conductive layer and make demonstration;
The film deposition rate organic material is 0.1-0.2nm/s, and metal material is 0.2-0.3nm/s.
(10) vacuum cooled
After device preparation is finished, the closure molecule vacuum pump, stop to vacuumize, product cools off with stove, and be 10min ± 0.5min cooling time, and cooling rate is 3 ℃/min, to 20 ℃ ± 3 ℃ of normal temperature.
(11) demoulding, cutting
Mask plate on the electro-conductive glass is removed, electro-conductive glass is cut into 6 homalographic devices, be 6 green diode products with specific purpose tool.
(12) check and analysis
Luminosity, green light color purity to green diode under vacuum state detect, analyze;
With described point formula luminance meter this device is carried out the luminosity test;
Detect with the green light color purity of spectrum Emanations Analysis instrument this device.
(13) encapsulation stores
With epoxy resin green diode is encapsulated,, be stored in drying, ventilation, lucifuge place to prevent cathode oxidation.
Described green diode carries out in the vacuum evaporation stove, vacuum degree in the vacuum evaporation stove is 0.002Pa, the evaporation temperature is warming up to 50 ℃ ± 2 ℃ by 20 ℃ ± 3 ℃ of normal temperature, programming rate is 3 ℃/min, heating-up time is 10min ± 0.5min, and constant temperature, insulation, evaporation temperature are 50 ℃ ± 2 ℃, and the time is 200min ± 10min, with the stove cooling rate is 3 ℃/min, and the time is 10min ± 0.5min.
It is solid-state with the chemical substance material that described chemical substance form transforms, and converts gaseous molecular under the heating in vacuum state, and vapor deposition film growth back gaseous molecular converts to solid-state, makes green diode with solid-state form.
Temperature value in the described vacuum evaporation stove in the evaporation source crucible, evaporation oxine aluminium temperature is 600 ℃ ± 12 ℃, evaporation salicylidene ethylenediamine zinc temperature is 700 ℃ ± 12 ℃, the AM aluminum metallization temperature is 800 ℃ ± 12 ℃, evaporation lithium fluoride temperature is 900 ℃ ± 12 ℃, the gold evaporation temperature is 1200 ℃ ± 12 ℃, evaporation N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) temperature is 600 ℃ ± 12 ℃, various chemical substances are by the solid-state gaseous state that is converted into, vapour deposition in the mask aperture on the electro-conductive glass face when temperature raises, film growth, be converted into solid-state rete, the green diode moulding.
Effect
The present invention compares with background technology has tangible advance, green diode has adopted the optical microcavity structure design, with the electro-conductive glass is anode, with lithium fluoride, aluminium, gold conduction intercalation is a negative electrode, form optical microcavity I, be anode with lithium fluoride/aluminium/gold conduction intercalation simultaneously, with lithium fluoride/aluminium lamination is that negative electrode is formed optical microcavity II, form two micro-cavity structures, the brightness and the luminous efficiency of diode have been improved greatly, in overall structure, with N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) is a hole transmission layer, with oxine aluminium is potential barrier and electron transfer layer, with salicylidene ethylenediamine zinc is potential well and green luminescence layer, adopt vacuum evaporation, vapour deposition, film growth method generates the conducting film of diode, solid-state chemical substance material carries out physics under the state of heating in vacuum solid-state, gaseous state, solid-state conversion, gaseous molecular is converted into solid-state after film forming on the electro-conductive glass, form the green diode of solid-state-gaseous state-solid-state conversion cycles preparation, do not use dye adulterated, directly use the salicylidene ethylenediamine Zinc material of green light, preparation technology's flow process is simple, cost is low, effective, luminous intensity, brightness, the efficient height, green glow is pure, the greenness height, chromaticity coordinates: X=0.3246, Y=0.5386 is the very good method for preparing green diode.
Description of drawings
Fig. 1 is a green diode preparation technology flow chart
Fig. 2 is green diode optical microcavity structure figure
Fig. 3 is vacuum evaporation, vapour deposition, form conversion, film growth temperature-time coordinate graph of a relation
Fig. 4 is a vacuum evaporation furnace accretion composition
Fig. 5 is electro-conductive glass, the state diagram of mask template
Fig. 6 is electro-conductive glass and green diode state diagram
Fig. 7 is a green diode current-voltage coordinate graph of a relation
Fig. 8 is a green diode electroluminescence collection of illustrative plates
Fig. 9 is green diode luminosity-voltage coordinate graph of a relation
Figure 10 green diode chromaticity coordinates figure
Shown in the figure, the piece number inventory is as follows:
1, electro-conductive glass, 2, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) layer, 3, the oxine aluminium lamination, 4, salicylidene ethylenediamine zinc layer, 5, the oxine aluminium lamination, 6, salicylidene ethylenediamine zinc layer, 7, the oxine aluminium lamination, 8, lithium fluoride/aluminium/gold layer, 9, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) layer, 10, the oxine aluminium lamination, 11, salicylidene ethylenediamine zinc layer, 12, the oxine aluminium lamination, 13, salicylidene ethylenediamine zinc layer, 14, the oxine aluminium lamination, 15, lithium fluoride/aluminium lamination, 16, electro-conductive glass/mask template, 17, furnace base, 18, body of heater, 19, star formula basal disc platform, 20, interior electrode, 21, crucible, 22, rotate suspension ring, 23, quartzy Thicknesser probe, 24, vacuum chamber, 25, the substrate hole, 26, crucible holder, 27, the crucible heater switch, 28, body of heater intensification switch, 29, the suspension ring rotating switch, 30, machinery, the molecular pump switch, 31, lead, 32, lead, 33, bell, 34, mask plate, 35, mask aperture, 36, the luminous zone, 37, non-light-emitting area, 38, green glow two machine pipes, 39, conducting surface, 40, nonconductive surface.
Execution mode
The present invention will be further described below in conjunction with accompanying drawing:
Shown in Figure 1, be green diode preparation technology flow chart, each preparation parameter is wanted strict control, operation according to the order of sequence.
To preparing required raw chemical material 8-hydroxyquinoline aluminum, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD), salicylidene ethylenediamine zinc, lithium fluoride, aluminium, gold want strict weighing, and carry out purity and control, must not there be impurity to get involved, the generation accessory substance prevents to mix, the etching and the amount of the detergent that cleans electro-conductive glass, watery hydrochloric acid, absolute ethyl alcohol, toluene, acetone, deionized water are wanted strict control, can not exceed maximum, minimum zone.
Will carry out fineness control to preparing required solid state chemistry material, fineness is advisable with 〉=300 orders, and guarantees the value abundance, must not be less than minimum zone.
Electro-conductive glass is the luminous carrier of green diode, strict etching, cleaning, oven dry, keeps clean, can not pollute.
The vacuum evaporation stove is the capital equipment of preparation diode, strict sealing, and vacuum degree will remain on 0.002Pa, will connect by dystectic tungsten filament or molybdenum sheet between the internal and external electrode, makes the crucible heating that fills deposition material after the energising.
Quartzy thickness meter probe is to measure the evaporation layer thickness, operate accurately.
Star formula substrate platform is to put electro-conductive glass, rotate evenly, and speed should be controlled at 20r/min, moves with uniform velocity, and bonding the wanting of electro-conductive glass and star formula substrate platform firmly will be noted the locality of electro-conductive glass upper conductive film.
To keep clean to preparing green diode equipment needed thereby and tester and environment.
Each layer thickness of green diode is wanted strict control, is measured, and can not exceed thickness range, otherwise influence luminescent properties.
The required raw chemical material proportioning of preparation green diode, being to determine in the number range that sets in advance, is unit of measurement with gram, milliliter, millimeter, when industrialization is produced, with kilogram, liter, millimeter is unit of measurement, and the thickness of its product all is unit with the nanometer.
Shown in Figure 2, be the green diode structure chart, electro-conductive glass is an anode, and the 1-8 layer is optical microcavity I, the 8th layer is the mixed layer of lithium fluoride/aluminium/gold, being the negative electrode of optical microcavity I, is again the anode of optical microcavity II, and the 8-15 layer is optical microcavity II, the 15th layer is the mixed layer of lithium fluoride/aluminium, be the negative electrode of optical microcavity II, its electric conductivity is good, and light is from the back side outgoing of anode.
Shown in Figure 3, be the intensification of vacuum evaporation stove, constant temperature, insulation, evaporation, chilling temperature and time coordinate graph of a relation, vacuum evaporation stove baking temperature is warming up to 50 ℃ ± 2 ℃ of A points by 20 ℃ ± 3 ℃ E point, and programming rate is 3 ℃/min, needs 10min; Constant temperature insulation film made growth section is the A-B section, and the time is 200min ± 10min, then for vacuum cooled by the B point to the F point, the 10min that takes time wants strict control temperature-time.
Shown in Figure 4, be vacuum evaporation furnace accretion composition, the top of stove seat 17 is body of heater 18, the top of body of heater 18 is bell 33, the bottom of body of heater 18 is a crucible holder 26, be symmetrical arranged crucible 21 on the crucible holder 26 side by side, interior electrode 20, between interior electrode and the crucible by lead 31,32 connect, the middle upper portion of body of heater 18 is a star formula basal disc platform 19, star formula basal disc platform 19 connects with bell 33 by rotating suspension ring 22, on the star formula basal disc platform 19 several substrate holes 25 are arranged, electro-conductive glass/mask lamina membranacea 16 is installed on the substrate hole 25, the upper left quarter of body of heater 18 is provided with quartzy Thicknesser probe 23, and to foresight formula basal disc platform 19, crucible heater switch 27 is arranged on the stove seat 17, furnace cover lifting switch 28, suspension ring rotating switch 29, machinery, molecular pump switch 30, vacuum degree remains on 0.002Pa, and temperature remains on 50 ℃ ± 2 ℃, and the vacuum evaporation stove is the capital equipment of preparation green diode.
Fig. 5 is electro-conductive glass, the state diagram of mask template, after the electro-conductive glass etching with mask template vertical symmetry up and down, mask aperture 35 corresponding luminous zones 36.
Shown in Figure 6, electro-conductive glass and green diode state diagram, the front of electro-conductive glass 1 is a conducting surface 39, and reverse side is a nonconductive surface 40, and the top symmetry has 6 green diodes 38 side by side, is non-light-emitting area 37 between the green diode 38.
Shown in Figure 7, be green diode electric current and voltage relationship coordinate diagram, ordinate is current strength A, abscissa is magnitude of voltage V, among the figure as can be known green device have good diode rectification characteristic.
Shown in Figure 8, be green diode electroluminescence spectrogram, ordinate is a relative intensity, abscissa is wavelength nm, among the figure as can be known: the green diode electricity causes the spectrum main peak and is positioned at the 495nm place, is in green light band.
Shown in Figure 9, be green diode luminosity and voltage coordinate graph of a relation, ordinate is luminosity 273cd/m
2, abscissa is magnitude of voltage V, among the figure as can be known: when voltage reaches 24V, reach its high-high brightness 273cd/m
2
Shown in Figure 10, be green diode chromaticity coordinates figure, chromaticity coordinates: X=0.3246, Y=0.5386 is positioned at the green glow zone.
Vacuum evaporation stove, control desk, etching apparatus, ultrasonic cleaner, vacuum drying chamber, beaker, container that preparation is used all are in quasi-operating status;
Selected chemical substance material; Carry out purity, fineness, precision control, material fineness 〉=300 orders, electro-conductive glass side hinders 10 Ω/-60 Ω/, transmissivity 80-88%, water white transparency, 40 * 40 * 5mm, adhesive tape 40 * 2 * 0.08mm;
Etching conductive glass: test positive and negative conductivity determines that the front is a conducting surface;
Make mask aperture: scribe 6 of equidistant rectangular through-hole type mask aperture on the mask template, mask aperture is of a size of 2 * 2 * 5mm;
Etching conductive glass: on conducting surface, symmetry is pasted two adhesive tapes, places beaker to add watery hydrochloric acid 50ml ± 5ml then, and 2min ± 0.2min is scribed in corrosion, with the soft material wiped clean of the electro-conductive glass after the etching, throw off the adhesive tape on the conducting surface;
Clean electro-conductive glass: place the beaker that fills absolute ethyl alcohol, toluene, acetone soln to carry out ultrasonic cleaning respectively respectively the electro-conductive glass of throwing off adhesive tape after the etching at ultrasonic cleaning machine;
Absolute ethyl alcohol: 100ml ± 5ml 15min ± 1min
Toluene: 100ml ± 5ml 15min ± 1min
Acetone: 100ml ± 5ml 15min ± 1min
Clean the mask template: the mask template is placed the beaker that fills absolute ethyl alcohol 100ml, toluene 100ml, acetone 100ml respectively, in ultrasonic cleaning machine, carry out ultrasonic cleaning 12min ± 1min respectively;
Vacuumize: place vacuum drying chamber to carry out dried the electro-conductive glass after the ultrasonic cleaning, mask template, 30 ℃ ± 2 ℃ of temperature, 5min ± 2min;
The vacuum ionic bombardment: electro-conductive glass mask template is placed in the vacuum evaporation stove, close the vacuum evaporation stove, open oil-sealed rotary pump, making pressure values is 15Pa ± 5Pa; Current strength is 50mA;
Vacuum evaporation, vapour deposition, form conversion, film growth, formed product:
Required chemical substance is placed in the vapor deposition source crucible in the vacuum evaporation stove: salicylidene ethylenediamine zinc 0.1g ± 0.1g, 8-hydroxyquinoline aluminum 2g ± 0.1g, lithium fluoride 0.1g ± 0.01g, aluminium 2g ± 0.1g, golden 0.5g ± 0.01g, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) 0.5g ± 0.01g
Put electro-conductive glass, mask template:
The mask template is seated on the electro-conductive glass, and with adhesive tape electro-conductive glass, mask template is pasted and fixed on the star formula basal disc platform in the vacuum evaporation stove together, the mask aperture on the mask template is aimed at the conducting surface of electro-conductive glass;
Pressure is when 0.002Pa in the vacuum evaporation stove, and the evaporation stove heats up, and speed is 3 ℃/min, and time 10min ± 0.5min is to 50 ℃ ± 3 ℃;
Chemical substance material solid state powder under the heating in vacuum state, by the solid-state gaseous molecular that is converted into, then vapour deposition, growing film in the mask nib on the conducting surface of electro-conductive glass, be converted into solid-state rete, formed product;
Open star formula substrate platform and rotate, rotating speed 20r/min press 15 layers of structure of green diode, evaporation successively, and the chemical substance powder that the evaporation source crucible is interior is connected electrode respectively by its gaseous state conversion temperature difference, with the bed thickness of quartzy calibrator controlling diaphragm.
On electro-conductive glass, in 6 fenestras of mask template, successively carry out evaporation simultaneously, finish until the 15th layer of evaporation and produce 6 diode products;
Cooling: after evaporation was finished, closure molecule vacuum pump, oil-sealed rotary pump stopped heated baking, and 6 green diodes cool off with stove, 3 ℃/min of cooling rate, and time 10min opens the vacuum evaporation stove then, takes out electro-conductive glass and mask template;
Demoulding, excision forming: the mask template on the electro-conductive glass is removed, with 6 conductive film layers on the specific purpose tool cutting electro-conductive glass, and moulding respectively, i.e. 6 green diode products, thus finished the overall process of preparation.
Claims (5)
1. preparation method with green diode of optical microcavity structure, it is characterized in that: the chemical substance material of use is: salicylidene ethylenediamine zinc, 8-hydroxyquinoline aluminum, lithium fluoride, aluminium, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD), gold, deionized water, watery hydrochloric acid, toluene, ethanol, acetone, detergent, electro-conductive glass, mask template, adhesive tape, its combination matching is: with gram, milliliter, millimeter is unit of measurement
Salicylidene ethylenediamine zinc: ZnL
21g ± 0.1g
8-hydroxyquinoline aluminum: Alq
32g ± 0.1g
Lithium fluoride: LiF 0.1g ± 0.01g
Aluminium: Al 2g ± 0.1g
Gold: Au 0.5g ± 0.01g
N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD): 0.5g ± 0.01g
Absolute ethyl alcohol: CH
3CH
2OH 200ml ± 5ml
Toluene: C
7H
8200ml ± 5ml
Acetone: CH
3COCH
3200ml ± 5ml
Watery hydrochloric acid: HCl 50ml ± 5ml
Detergent: 50ml ± 5ml
Electro-conductive glass: tin indium oxide ITO 40 * 40 * 5mm water white transparency 60 Ω/mouths
Mask template: 40 * 40 * 5mm plastic cement flexible material
Adhesive tape: 40 * 2 * 0.08mm
Preparation method of the present invention is as follows:
(1) selected chemical substance
To carry out selectedly to the required chemical substance material fine powder of preparation, and carry out purity, fineness, precision control:
8-hydroxyquinoline aluminum: 99.995%
Salicylidene ethylenediamine zinc: 99.95%
Aluminium: 99.9%
Lithium fluoride: 99.95%
Gold: 99.95%
Deionized water: 99.995%
Absolute ethyl alcohol: 99.7%
Toluene: 99.5%
Acetone: 99.5%
Watery hydrochloric acid: concentration 20%
Detergent: concentration 20%
Electro-conductive glass: tin indium oxide ITO, side's resistance 10 Ω/-60 Ω/ transmissivity 80%-88% water white transparency
Mask template: 40 * 40 * 5mm plastic cement flexible material
Adhesive tape: 40 * 2 * 0.08mm
Solid state chemistry material fineness of powder≤300 orders;
(2) etching conductive glass
The electric conductivity of testing conductive glass, determine that conducting surface is positive, symmetry is pasted two adhesive tape 40 * 2 * 0.08mm on conducting surface top, and the electro-conductive glass of pasting adhesive tape is placed beaker, adds watery hydrochloric acid 50ml ± 5ml then, corrode and etching, time is 2min ± 0.2min, and the electro-conductive glass after the etching is wiped erosion electro-conductive glass obverse and reverse repeatedly with white soft fibre material, makes its cleaning, throw off the adhesive tape on the electro-conductive glass then, in order to cleaning;
(3) make mask aperture
Make 6 equidistant rectangular through-hole pattern hole 2 * 2 * 5mm in the last symmetry cutting of mask template 40 * 40 * 5mm
(4) clean electro-conductive glass
Electro-conductive glass after the etching is placed beaker, be placed in the ultrasonic cleaner and clean, put absolute ethyl alcohol 100ml ± 5ml, toluene 100ml ± 5ml, acetone 100ml ± 5ml respectively successively in beaker, each scavenging period is respectively 15min ± 1min
(5) clean mask template, mask aperture
The mask template is placed beaker, beaker is placed ultrasonic cleaner, put into absolute ethyl alcohol, toluene, acetone successively respectively in beaker, carry out ultrasonic cleaning, order is:
Absolute ethyl alcohol: 100ml ± 5ml time 12min ± 1min
Toluene: 100ml ± 5ml time 12min ± 1min
Acetone: 100ml ± 5ml time 12min ± 1min
(6) vacuum drying treatment
Place vacuum drying chamber to carry out dried electro-conductive glass, mask template after cleaning, baking temperature is 30 ℃ ± 2 ℃, and the time is 5min ± 0.2min
(7) put electro-conductive glass, mask template
Etching, cleaning, dried electro-conductive glass, mask template are placed on the star formula basal disc platform in the vacuum evaporation stove, and mask aperture is aimed at the conducting surface of electro-conductive glass, pastes fixing with adhesive tape;
(8) vacuum ionic bombardment
Ultrasonic cleaning, dried electro-conductive glass, mask template are placed the vacuum evaporation stove, close the vacuum evaporation stove, open oil-sealed rotary pump, when the pressure in the vacuum evaporation stove during at 15Pa ± 5Pa, open vacuum evaporation stove ion bombardment current controller, with 50mA electric current bombardment induced conductivity glass, mask template 10min ± 1min, improve the work function of anode;
(9) vacuum evaporation, vapour deposition, form conversion, film growth, formed product
With the electro-conductive glass after the ion bombardment, the mask template places the centre position of star formula basal disc platform and fixes, chemical substance salicylidene ethylenediamine zinc 0.1g ± 0.1g that preparation is required, 8-hydroxyquinoline aluminum 2g ± 0.1g, lithium fluoride 0.1g ± 0.01g, aluminium 2g ± 0.1g, gold 0.5g ± 0.01g, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) 0.5g ± 0.01g places the evaporation source crucible in the vacuum furnace respectively, open oil-sealed rotary pump, molecular pump, when pressure≤0.002Pa, oven is opened, temperature rises to 50 ℃ ± 2 ℃, prepares evaporation;
Open quartzy calibrator, by the deposit film thickness on the quartz probe detection electro-conductive glass;
Open star formula basal disc platform in the evaporation stove, electro-conductive glass is rotated with platform, star formula basal disc platform velocity of rotation is 20r/min, the used chemical substance of conductive film growth is carried out the gas phase fission and is transformed under the heating in vacuum state, transform to gaseous state by solid-state, the material powder of gaseous state is molecularity, solidifies the back and becomes solid-state conductive film, carries out as follows:
Carry out the evaporation moulding in the vacuum evaporation stove, the vacuum evaporation furnace temperature is 50 ℃ ± 2 ℃;
The 1st step: connect evaporation source N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) powder crucible, make it be warming up to 600 ℃ ± 12 ℃, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) gaseous molecular deposition growing on the 1st layer of electro-conductive glass becomes the 2nd layer, both hole transmission layers, thickness is 20nm ± 0.5nm
The 2nd step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 2nd layer becomes the 3rd layer, i.e. barrier layer, and thickness is 3nm ± 0.5nm
The 3rd step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 3rd layer becomes the 4th layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 4th step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 4th layer becomes the 5th layer, both barrier layers, and thickness is 3nm ± 0.5nm
The 5th step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 5th layer becomes the 6th layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 6th step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 6th layer becomes the 7th layer, i.e. barrier layer and electron transfer layer, and thickness is 30nm ± 0.5nm
The 7th step: connect evaporation source LiF, Al and Au powder crucible respectively, make its be warming up to 900 ℃ ± 12 ℃, 800 ℃ ± 12 ℃, 1200 ℃ ± 12 ℃,, the gaseous molecular of LiF, Al and Au deposition growing on the 7th layer becomes the 8th layer, i.e. the moon-anode intercalation, and thickness is 8nm ± 0.5nm
The 8th step: connect evaporation source N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) powder crucible, make it be warming up to 600 ℃ ± 12 ℃, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) gaseous molecular deposition growing on the 8th layer becomes the 9th layer, both hole transmission layers, thickness is 20nm ± 0.5nm
The 9th step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 9th layer becomes the 10th layer, i.e. barrier layer, and thickness is 3nm ± 0.5nm
The 10th step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 10th layer becomes 11th layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 11st step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on 11th layer becomes the 12nd layer, i.e. barrier layer, and thickness is 3nm ± 0.5nm
The 12nd step: connect evaporation source ZnL
2The powder crucible makes it be warming up to 700 ℃ ± 12 ℃, ZnL
2Gaseous molecular deposition growing on the 12nd layer becomes the 13rd layer, i.e. potential well layer, and thickness is 3nm ± 0.5nm
The 13rd step: connect evaporation source Alq
3The powder crucible makes it be warming up to 600 ℃ ± 12 ℃, Alq
3Gaseous molecular deposition growing on the 13rd layer becomes the 14th layer, i.e. barrier layer, and thickness is 30nm ± 0.5nm
The 14th step: connect evaporation source LiF and Al powder crucible respectively, make it be warming up to 900 ℃ ± 12 ℃, 800 ℃ ± 12 ℃, the gaseous molecular of LiF and Al deposition growing on the 14th layer becomes 15 layers, i.e. cathode layer, and thickness is 30nm ± 0.5nm
The 1-8 layer is optical microcavity I
The 8-15 layer is optical microcavity II
Vacuum evaporation deposition growing form is:
, be the conversion of physics attitude;
In preparation process, quartzy thickness meter probe is omnidistance to be opened, and measures the thickness of each conductive layer and make demonstration;
The film deposition rate organic material is 0.1-0.2nm/s, and metal material is 0.2-0.3nm/s;
(10) vacuum cooled
After device preparation is finished, the closure molecule vacuum pump, stop to vacuumize, product cools off with stove, and be 10min ± 0.5min cooling time, and cooling rate is 3 ℃/min, to 20 ℃ ± 3 ℃ of normal temperature;
(11) demoulding, cutting
Mask plate on the electro-conductive glass is removed, electro-conductive glass is cut into 6 homalographic devices, be 6 green diode products with specific purpose tool;
(12) check and analysis
Luminosity, green light color purity to green diode under vacuum state detect, analyze
With described point formula luminance meter this device is carried out the luminosity test
Detect with the green light color purity of spectrum Emanations Analysis instrument this device
(13) encapsulation stores
With epoxy resin green diode is encapsulated,, be stored in drying, ventilation, lucifuge place to prevent cathode oxidation.
2. the preparation method with green diode of optical microcavity structure according to claim 1, it is characterized in that: described green diode carries out in the vacuum evaporation stove, vacuum degree in the vacuum evaporation stove is 0.002Pa, the evaporation temperature is warming up to 50 ℃ ± 2 ℃ by 20 ℃ ± 3 ℃ of normal temperature, programming rate is 3 ℃/min, heating-up time is 10min ± 0.5min, constant temperature, insulation evaporation temperature are 50 ℃ ± 2 ℃, time is 150min ± 10min, with the stove cooling rate is 3 ℃/min, and the time is 10min ± 0.5min.
3. the preparation method with green diode of optical microcavity structure according to claim 1, it is characterized in that: it is solid-state with the chemical substance material that the form of described chemical substance transforms, under the heating in vacuum state, convert gaseous molecular to, vapor deposition film growth back gaseous molecular converts to solid-state, makes green diode with solid-state form.
4. the preparation method with green diode of micro-cavity structure according to claim 1, it is characterized in that: the temperature value in the evaporation source crucible in the described vacuum evaporation stove, evaporation oxine aluminium temperature is 600 ℃ ± 12 ℃, evaporation salicylidene ethylenediamine zinc temperature is 700 ℃ ± 12 ℃, the AM aluminum metallization temperature is 800 ℃ ± 12 ℃, evaporation lithium fluoride temperature is 900 ℃ ± 12 ℃, the gold evaporation temperature is 1200 ℃ ± 12 ℃, evaporation N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) temperature is 600 ℃ ± 12 ℃, various chemical substances are by the solid-state gaseous state that is converted into when temperature raises, vapour deposition in the mask aperture on the electro-conductive glass face, film growth, be converted into solid-state rete, the green diode moulding.
5. the green diode that preparation method according to claim 1 is prepared with optical microcavity structure, it is characterized in that: described green diode is the optical microcavity stepped construction, totally 15 layers, the 1st layer is anode layer, it is conductive glass layer, the 1st layer of top is the 2nd layer, be hole transmission layer, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) layer, the 2nd layer of top is the 3rd layer, it is the oxine aluminium lamination, the 3rd layer of top is the 4th layer, i.e. salicylidene ethylenediamine zinc layer, and the 4th layer of top is the 5th layer, it is the oxine aluminium lamination, the 5th layer of top is the 6th layer, i.e. salicylidene ethylenediamine zinc layer, and the 6th layer of top is the 7th layer, it is the oxine aluminium lamination, the 7th layer of top is the 8th layer, i.e. the male-female utmost point intercalation of forming by lithium fluoride/aluminium/gold, and the 8th layer of top is the 9th layer, it is hole transmission layer, N, N '-two (how basic 1-is)-N, N '-diphenyl-1,1 '-diphenyl-4,4 '-diamines (NPD) layer, the 9th layer of top is the 10th layer, i.e. the oxine aluminium lamination, the 10th layer of top is 11th layer, be salicylidene ethylenediamine zinc layer, 11th layer top is the 12nd layer, i.e. the oxine aluminium lamination, the 12nd layer of top is the 13rd layer, be salicylidene ethylenediamine zinc layer, the 13rd layer of top is the 14th layer, i.e. the oxine aluminium lamination, the 14th layer of top is the 15th layer, i.e. the cathode layer of being made up of lithium fluoride/aluminium; 8 layers of intercalation of the 1st layer of electro-conductive glass anode layer to the are formed optical microcavity I, form optical microcavity II for the 8th layer to the 15th layer, the 8th layer of male-female utmost point intercalation promptly is the cathode layer of optical microcavity I, is the anode layer of optical microcavity II again that the 15th layer is the cathode layer of optical microcavity II.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100124739A CN100461495C (en) | 2006-03-07 | 2006-03-07 | Green diode with optical microcavity structure and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100124739A CN100461495C (en) | 2006-03-07 | 2006-03-07 | Green diode with optical microcavity structure and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1819305A CN1819305A (en) | 2006-08-16 |
| CN100461495C true CN100461495C (en) | 2009-02-11 |
Family
ID=36919100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100124739A Expired - Fee Related CN100461495C (en) | 2006-03-07 | 2006-03-07 | Green diode with optical microcavity structure and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100461495C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105493307B (en) * | 2015-10-29 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of organic LED structure and its manufacture method and related display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004327373A (en) * | 2003-04-28 | 2004-11-18 | Shoka Kagi Kofun Yugenkoshi | Organic el full color panel capable of adjusting light color purity and its manufacturing method |
| US6905788B2 (en) * | 2003-09-12 | 2005-06-14 | Eastman Kodak Company | Stabilized OLED device |
| US6917159B2 (en) * | 2003-08-14 | 2005-07-12 | Eastman Kodak Company | Microcavity OLED device |
| CN1728413A (en) * | 2004-12-21 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | Organic microcavity white light-emitting diode |
-
2006
- 2006-03-07 CN CNB2006100124739A patent/CN100461495C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004327373A (en) * | 2003-04-28 | 2004-11-18 | Shoka Kagi Kofun Yugenkoshi | Organic el full color panel capable of adjusting light color purity and its manufacturing method |
| US6917159B2 (en) * | 2003-08-14 | 2005-07-12 | Eastman Kodak Company | Microcavity OLED device |
| US6905788B2 (en) * | 2003-09-12 | 2005-06-14 | Eastman Kodak Company | Stabilized OLED device |
| CN1728413A (en) * | 2004-12-21 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | Organic microcavity white light-emitting diode |
Non-Patent Citations (2)
| Title |
|---|
| 有机微腔绿色发光二极管. 张春玉，刘星元，马凤英，朱万彬，王立军.光学学报 ACTA OPTICA SINICA，第26卷第1期. 2006 |
| 有机微腔绿色发光二极管. 张春玉，刘星元，马凤英，朱万彬，王立军.光学学报 ACTA OPTICA SINICA，第26卷第1期. 2006 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1819305A (en) | 2006-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105895803B (en) | Perovskite photoelectric device, preparation method and perovskite material | |
| Shi et al. | High-performance planar green light-emitting diodes based on a PEDOT: PSS/CH 3 NH 3 PbBr 3/ZnO sandwich structure | |
| Duggal et al. | Organic light-emitting devices for illumination quality white light | |
| JP5669283B2 (en) | Singlet capture by organic molecules for optoelectronic devices | |
| CN100466332C (en) | Method for preparing organic ELD capable of regulating light emitting colors | |
| CN102394278B (en) | Preparation method of phosphorescent diode with electronic transmission layer doped with lithium fluoride | |
| CN102136550A (en) | White light organic electroluminescent device and preparation method thereof | |
| CN111740033A (en) | Near-infrared perovskite light-emitting diode and preparation method thereof | |
| CN101094543A (en) | Color organic electroluminescence device with emission structure at top, and preparation method | |
| CN101794864B (en) | Tandem organic light emitting device (OLED) and method for producing same | |
| CN106340594A (en) | White-light organic electroluminescent device and preparation method thereof | |
| CN109256473A (en) | White organic LED and preparation method | |
| CN100477325C (en) | A blue and green light emitting LED and manufacture method thereof | |
| Xiang et al. | Vacuum-deposited perovskite CsPbBr3 thin-films for temperature-stable Si based pure-green all-inorganic light-emitting diodes | |
| CN100461495C (en) | Green diode with optical microcavity structure and production thereof | |
| CN109119544A (en) | A kind of perovskite electroluminescent device of novel light-emitting layer structure and preparation method thereof | |
| CN101771136B (en) | Method for preparing white organic light-emitting diode (WOLED) with high color purity | |
| CN100550473C (en) | Green diode and preparation method with interspersed interactive structure | |
| CN105837602A (en) | Yellow-green light cuprous complex with thermally activated delayed fluorescence properties and preparation method thereof | |
| CN110416420A (en) | Light emitting diode with quantum dots and preparation method thereof | |
| CN100446301C (en) | Organic electroluminescence LED of emitting yellow light and preparing method | |
| CN110396050B (en) | White light organic light emitting diode and preparation method thereof | |
| CN110791282B (en) | Mn-doped steel wire4+Alkali metal fluoferrite red luminescent material and preparation method thereof | |
| Afandi et al. | Anti-thermal quenching in phytochrome-active ac-driven electroluminescence from β-ga2o3: Cr3+ powder phosphor | |
| Wang et al. | Distinctive electroluminescence characteristics behind efficient mesoscopic perovskite solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20110307 |