CN100461465C - Infrared detector of gallium arsenic/aluminium gallium arsenic myriametric wave quanta trap - Google Patents

Infrared detector of gallium arsenic/aluminium gallium arsenic myriametric wave quanta trap Download PDF

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CN100461465C
CN100461465C CNB2006101480694A CN200610148069A CN100461465C CN 100461465 C CN100461465 C CN 100461465C CN B2006101480694 A CNB2006101480694 A CN B2006101480694A CN 200610148069 A CN200610148069 A CN 200610148069A CN 100461465 C CN100461465 C CN 100461465C
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quantum well
layer
gaas
infrared detector
gallium arsenic
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CN1996622A (en
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陆卫
熊大元
李宁
甄红楼
张波
陈平平
李天信
陈效双
李志锋
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Abstract

This invention discloses one indium arsenic or aluminum indium arsenic wave quantum well infrared detector, which is formed by electrode layer with low mixture and quantum well layer of high mixture, wherein, under work temperature, well mixture improvement cannot change dark current and greatly lower noise and dark current.

Description

Gallium arsenide/potassium arsenic aluminate very long wave quantum trap infrared detector
Technical field
The present invention relates to gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs) very long wave quantum trap infrared detector, specifically be meant n type GaAs/Al xGa 1-xAs very long wave (15～16 μ m) quantum trap infrared detector.
Background technology
In nearest 20 years, along with the fast development of low-dimensional materials, the laboratory research of quantum trap infrared detector and business development are very active.Compared with traditional cadmium-telluride-mercury infrared detector, the advantage of quantum well detector is the good uniformity of material, the device making technics maturation, and anti-irradiation, cost are low, for the focal plane array detector, these advantages performances more obvious.But because the base quantity minor structure of conventional quantum well detector has determined that the dark current of quantum well detector is big and the quantum absorption efficiency is lower, the photoelectric current of Chan Shenging is less for this reason, has been subjected to very big restriction on using.At present, generally good is the application future of GaAs/AlGaAs Multiple Quantum Well detector aspect the very long wave wave band.Because conventional n type GaAs/AlGaAs Multiple Quantum Well detector is to utilize the GaAs of narrow band gap and the AlGaAs of broad-band gap to form quantum well structure, Electron absorption infrared light on the bound state in the quantum well structure is to the transition of high energy band, under the extra electric field effect, transport, form the detection of photoelectric current realization to infrared light, entire device comprises n type injection region (emitter), Multiple Quantum Well uptake zone and n type collecting region (collector electrode).Room behind the formation photoelectric current in the quantum well is then replenished by the offset current that injects.The injection electronics of emitter forms the dark current of device when unglazed the photograph.Because the similar resistance of conventional structure, its resistance is about 10 megaohm magnitudes (the photosensitive elemental areas of typical 200 * 200 square microns) under unglazed radiation situation, therefore dark current will reach the submicron magnitude when operating voltage is 2～3 volts, and the dark current (Yue Naan magnitude) in using than typical cadmium-telluride-mercury infrared detector is big.Its main mechanism is auxiliary tunnelling of heat and thermionic emission mechanism.Theoretical Calculation by strictness shows that the dark current of conventional multiple quantum well infrared detector mainly depends on the height and the thickness of potential barrier in the device, and potential barrier is high more, thick more, and dark current is just more little.But take all factors into consideration characteristics such as the detection wavelength of device and detectivity, what the potential barrier in the device architecture can not be done is very high, very thick, otherwise photoelectric current also can be subjected to very strong inhibition, so the dark current of device can not significantly reduce always.Because the noise of device is proportional to the dark current of device, the therefore detectivity of conventional GaAs/AlGaAs Multiple Quantum Well detector never bigger raising for many years.
Summary of the invention
The objective of the invention is to propose a kind of by changing n type GaAs/Al xGa 1-xThe doping content of As very long wave quantum trap infrared detector reaches the reduction dark current, the purpose of the detectivity of the absorption coefficient of light of enhance device and raising detector.
Very long wave quantum trap infrared detector of the present invention comprises GaAs substrate layer 1, successively grows successively by molecular beam epitaxy or Organometallic Chemistry gas deposition on the GaAs substrate layer:
The GaAs bottom electrode 2 that the n type mixes;
The multiple quantum well layer 3 in 50 cycles;
The Al of 55～60nm xGa 1-xAs barrier layer 4;
The GaAs upper electrode layer 5 that the n type mixes;
It is characterized in that:
The doping content that said n type mixes is 1.0～2.0 * 10 17Cm -3
Said Al xGa 1-xAs barrier layer 4, wherein x=0.14-0.15;
The multiple quantum well layer 3 in said 50 cycles, each cycle comprises the Al of 1 55～60nm xGa 1-xAs barrier layer, wherein x=0.14～0.15; The GaAs quantum well layer of 1 6～7nm, wherein the doping content of quantum well layer is 1.0～2.0 * 10 18Cm -3
Device of the present invention based on operation principle be: for n type GaAs/Al xGa 1-xAs (x=0.14-0.15) very long wave quantum trap infrared detector, because potential barrier is very thick, directly the potential barrier tunnelling can be ignored, dark current is mainly derived from the charge carrier on the continuous state that is higher than potential barrier.Under the profound hypothermia work of 40K～50K, the resistance of device reaches the megaohm magnitude, under 2～3 volts common small voltage, the electric current of device is very little, the conduction band of entire device can be with and change not quite, electronics in each quantum well is a local, because the condition of continuity of electric current, the hole that forms after the electronics thermal excitation in the quantum well can be replenished by the electron institute that continuous state is captured again, the dark current of whole very long wave device is determined that with main doping content by electrode layer the change of the doping content of quantum well layer does not exert an influence to the dark current of entire device basically under such condition.Reduce the dark current and the noise of device by the doping content that reduces electrode layer, and suitably improve the doping content of quantum well on this basis, thereby the absorption coefficient and the photoelectric current of raising quantum well finally make the detectivity level of device be promoted.
At the suitable doping content of electrode layer and quantum well layer design, the effective dark current of suppression device, the photoelectric current of enhance device.
Advantage of the present invention is:
1 compares with the GaAs/AlGaAs very long wave quantum well detector of routine, and the dark current and the noise of GaAs/AlGaAs very long wave quantum trap infrared detector of the present invention significantly reduce.
2 compare with the GaAs/AlGaAs long-wave quantum well infrared detector of routine, and the absorption coefficient of light of GaAs/AlGaAs very long wave quantum trap infrared detector of the present invention significantly promotes, thereby makes the photoelectric current of device and responsiveness be able to remarkable enhancing.
The factor of 3 above-mentioned two aspects makes the detectivity level of GaAs/AlGaAs very long wave quantum trap infrared detector of the present invention significantly promote together.
Description of drawings
Fig. 1 is the structural representation of very long wave quantum trap infrared detector of the present invention;
Fig. 2 is dark current curve chart (the device working temperature: 40K) of very long wave quantum trap infrared detector of the present invention and conventional long-wave quantum well device;
Fig. 3 is a curve chart (device working temperature: 40K) very long wave quantum trap infrared detector of the present invention and the lambda1-wavelength conventional long-wave quantum well infrared detector and the absorption coefficient of light;
Fig. 4 is a relation (device working temperature: 40K) very long wave quantum trap infrared detector of the present invention and detectivity conventional long-wave quantum well infrared detector and bias voltage;
Embodiment
Be example with near the very long wave quantum trap infrared detector of peak detection wavelength 16 μ m below, in conjunction with the accompanying drawings the specific embodiment of the present invention be described in further detail.
See accompanying drawing, device of the present invention comprises: GaAs substrate layer 1, on the GaAs substrate layer, successively grow successively: the GaAs bottom electrode 2 that the n type mixes by molecular beam epitaxy or Organometallic Chemistry gas deposition; The multiple quantum well layer 3 in 50 cycles; The Al that 60nm is thick xGa 1-xAs barrier layer 4; The GaAs upper electrode layer 5 that the n type mixes; Said multiple quantum well layer 3, each cycle comprises the Al of 1 60nm 0.15Ga 0.85The GaAs quantum well layer of As barrier layer and 1 6nm, the doping content of quantum well are 1.0 * 10 18Cm -3Emitter and collector is the Al that the n type mixes 0.15Ga 0.85As, doping content is 2.0 * 10 17Cm -3
According to the foregoing description, strict Theoretical Calculation shows, the very long wave quantum trap infrared detector under the working temperature of 40K, when the doping content of the lower electrode layer (emitter layer) of device from 1.0 * 10 of routine 18Cm -3Be reduced to 2.0 * 10 17Cm -3, reduce by 2 to 3 magnitudes at 3.0 volts of bias condition dark current of following time, 1 magnitude of corresponding devices noise decline; When the quantum well layer doping content of device from 2.0 * 10 of routine 17Cm -3Be increased to 1.0 * 10 18Cm -3The time, strengthening 3 to 4 times at the absorption coefficient of light of 3.0 volts of bias condition devices of following time, the corresponding devices responsiveness improves 3 times, and (the device cross-sectional area is all with 240 * 240 μ m 2Calculate).Thereby the detectivity of device can improve 30 to 40 times.
Device is concrete at first to be reduced to 40K with the device working temperature in using, and regulates operating voltage to 3 volt.Be meter relatively, can be simultaneously (the electrode layer doping content is 1.0 * 10 with the GaAs/AlGaAs of routine 18Cm -3, the quantum well layer doping content is 2.0 * 10 17Cm -3) test simultaneously under identical condition of work, the detectivity of very long wave quantum trap infrared detector of the present invention is significantly improved.

Claims (1)

1. gallium arsenide/potassium arsenic aluminate very long wave quantum trap infrared detector comprises: GaAs substrate layer (1), on the GaAs substrate layer by molecular beam epitaxy or the growth successively successively of Organometallic Chemistry gas deposition:
The GaAs bottom electrode (2) that the n type mixes;
The multiple quantum well layer in 50 cycles (3);
The Al of 55-60nm xGa 1-xAs barrier layer (4);
The GaAs upper electrode layer (5) that the n type mixes;
It is characterized in that:
The doping content scope of said n type doped electrode layer is in 1.0-2.0 * 10 17Cm -3
Said Al xGa 1-xAs barrier layer (4), wherein x=0.14-0.15;
The multiple quantum well layer in said 50 cycles (3), each cycle comprises the Al of 1 55-60nm xGa 1-xAs barrier layer, wherein x=0.14-0.15; The GaAs quantum well layer of 1 6-7nm, wherein the doping content scope of quantum well layer is 1.0-2.0 * 10 18Cm -3
CNB2006101480694A 2006-12-27 2006-12-27 Infrared detector of gallium arsenic/aluminium gallium arsenic myriametric wave quanta trap Expired - Fee Related CN100461465C (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859808A (en) * 2010-05-07 2010-10-13 无锡沃浦光电传感科技有限公司 Quantum well infrared detector
CN102201482A (en) * 2010-03-22 2011-09-28 无锡沃浦光电传感科技有限公司 Quantum well infrared detector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107665930B (en) * 2017-08-30 2023-05-05 中国科学院上海技术物理研究所 Quantum well infrared detector for realizing wavelength expansion function and design method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012974A (en) * 2004-06-23 2006-01-12 Fujitsu Ltd Optical detection device

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2006012974A (en) * 2004-06-23 2006-01-12 Fujitsu Ltd Optical detection device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Detection wavelengths and photocurrentsofverylongwavelength quantum-well infraredphotodetectors. Ning Li 等.Infrared Physics ＆Tecnology,Vol.47 . 2005 *
Tuning of detection wavelength ofGaAs/AlGaAsquantum-well IR photo-detectors by thermalinterdiffusion. Xingquan Liu 等.Optoelectronic and Microelectronic Materials Devices. 1999 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201482A (en) * 2010-03-22 2011-09-28 无锡沃浦光电传感科技有限公司 Quantum well infrared detector
CN101859808A (en) * 2010-05-07 2010-10-13 无锡沃浦光电传感科技有限公司 Quantum well infrared detector

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