CN100461435C - Very-long-wave mercury cadmium telluride infrared focal plane detector antireflective membrane and its preparing method - Google Patents
Very-long-wave mercury cadmium telluride infrared focal plane detector antireflective membrane and its preparing method Download PDFInfo
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- CN100461435C CN100461435C CNB2006100310164A CN200610031016A CN100461435C CN 100461435 C CN100461435 C CN 100461435C CN B2006100310164 A CNB2006100310164 A CN B2006100310164A CN 200610031016 A CN200610031016 A CN 200610031016A CN 100461435 C CN100461435 C CN 100461435C
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Abstract
The antireflection coating is placed on photosensitive element array, area of signal extraction electrode, and common electrode area. The antireflection coating placed on the photosensitive element array is ZnS material with thickness 0.8-1.5 micros. The antireflection coating placed on the area of signal extraction electrode, and common electrode area is indium film with thickness 150 - 200 micros. Characters of the preparation method are that after indium film of antireflection coating is formed, oxygen plasma process is carried out for indium film. Thus, surface of the indium film becomes more smoothing and compact, and grey indium becomes grayer so that reflection coefficient reaches low limit of the material. Advantages are: receiving signal of incident light in maximum so as to raise photoelectric efficiency of apparatus. The invention is suitable to apparatus with large coverage of electrode area.
Description
Technical field
The present invention relates to mercury cadmium telluride photoconduction infrared focal plane detector, specifically be meant the photosensitive area of very long wave mercury cadmium telluride photoconduction infrared focal plane detector and the preparation method of anti-anti-film on the electrode district and the anti-anti-film on the electrode district.
Background technology
The photoelectric efficiency of mercury cadmium telluride photoconduction infrared focal plane detector is one of its important performance characteristic, if the reflectivity of mercury cadmium telluride photosurface can reduce, then the photoelectric efficiency of device is improved, thereby the responsiveness of tellurium-cadmium-mercury (HgCdTe) infrared focal plane array device and detectivity all are improved.Therefore, the ZnS of existing intermediate waves (1-5 μ m) and long wave (8-14 μ m) device photosurface surface coverage different-thickness is as anti-reflection or anti-anti-film usefulness in this field at present, and this thickness is generally less than 4000
, this is by the decision of the character of the service band of device and optical thin film.And up to the present, the electrode district of device all exposes on the mercury cadmium telluride surface with the original metal looks, and the reflectivity of common metal material all approaches 100%, so this a part of incident radiation loss also is sizable.Especially for multicomponent device, because the weld zone of its electrode of traditional devices structure does not reach reliability requirement, develop well for this reason and stretched the electrode deriving structure, see Chinese patent: CN1812137, " have the mercury cadmium telluride infrared photoconductivity detector that well is stretched electrode ", because this structure electrode district accounts for bigger area, causes the incident light major part to be reflected by electrode district, thereby reduce the performance of device.Therefore, must seek a kind of at specific band, i.e. very long wave section (15-16 μ m), the one deck of growing on device photosensitive unit surface and electrode district has the most effective anti-reflective film, improves the performance of device, satisfies instructions for use.
Summary of the invention
Purpose of the present invention is exactly that a kind of photosensitive area of very long wave mercury cadmium telluride photoconduction infrared focal plane detector and the preparation method of anti-anti-film on the electrode district and the anti-anti-film on the electrode district will be provided, and further improves the photoelectric efficiency of device by anti-anti-film.
The object of the present invention is achieved like this, a kind of anti-anti-film of very long wave mercury cadmium telluride photoconduction infrared focal plane detector, described very long wave mercury cadmium telluride photoconduction infrared focal plane detector, comprise: substrate, be fixed on mercury cadmium telluride thin slice on the substrate by epoxy glue, by the semiconductor integrated device technology of routine, the photosensitive first array that on the mercury cadmium telluride thin slice, forms and lay respectively at the signal extraction electrode district and the common electrode area of photosensitive unit two sides.Described anti-anti-film is put on photosensitive first array, signal extraction electrode district and common electrode area.Placing the anti-anti-film on photosensitive first array is the ZnS material of 0.8-1.5 micron thickness, and the anti-anti-film of putting on signal extraction electrode district and common electrode area is that thickness is 150
～200
The indium film.Signal extraction electrode district and common electrode area are to be made of indium floor and the gold floor put on the mercury cadmium telluride thin slice successively.Photosensitive unit is made of mercury cadmium telluride and the oxide layer on it.
The preparation method of the anti-anti-film of a kind of very long wave mercury cadmium telluride photoconduction infrared focal plane detector, concrete steps are as follows:
A. on photosensitive first array of the mercury cadmium telluride photoconduction infrared focal plane detector for preparing, utilize the ZnS layer of conventional semiconductor technology growth 0.8-1.5 micron thickness;
B. utilize conventional photoetching and masking method, in the argon ion coating machine, adopt high purity indium, the signal extraction electrode district and the common electrode area of above-mentioned device are carried out ion film plating, the indium film thickness is controlled at 150
～200
C. long good indium film is carried out oxygen plasma and handles treatment conditions again:
Throughput: 5-10 (ml/min);
Air pressure: 200-600mtorr;
Strength frequency: 8-12MHz;
Time: 6-20 minute.
Can make the more smooth densification in surface of indium film through above-mentioned oxygen plasma treatment, make gloomy indium itself more dim, reflection coefficient reaches the low Limiting Level of this material.
The present invention has following beneficial effect
1. adopt the processing method of anti-anti-film on anti-anti-film of the present invention and the electrode district, can receive the signal of incident light to greatest extent, improved the photoelectric efficiency of device.
2. the present invention is particularly suitable for the device in broad-area electrode district, as has the mercury cadmium telluride infrared photoconductivity detector that well is stretched electrode.
Description of drawings
Fig. 1 is that 64 yuan of wells are stretched electrode very long wave photoconduction HgCdTe infrared focal plane detector plane schematic diagram;
Fig. 2 is certain the monobasic cross-sectional view among Fig. 1;
Fig. 3 is the reflectance curve figure on electrode district surface, and curve 1 is the reflectance curve of the anti-film of electrode district nonreactive, the reflectance curve when curve 2 has the anti-anti-film of indium for electrode district, and curve 3 passes through reflectance curve after the oxygen plasma treatment for indium film of antireflection coating.
Fig. 4 is the reflectance curve figure on photosensitive unit surface, the reflectance curve the when reflectance curve when curve 1 be the anti-film of the surperficial nonreactive of photosensitive unit, curve 2 have the ZnS of 1 micron thickness to resist anti-film for photosensitive first surface.
Embodiment
The photoconductive HgCdTe infrared focal plane detector of stretching electrode 15-16 mu m waveband with 64 yuan of wells is embodiment below, in conjunction with the accompanying drawings the specific embodiment of the present invention is described in further detail:
See Fig. 2, detector comprises substrate 1, is fixed on mercury cadmium telluride thin slice 2 on the substrate by epoxy glue, thin slice 2 thickness are 10 μ m, adopt conventional device preparation technology, on the mercury cadmium telluride thin slice, form 64 yuan of photosensitive units 3 and the signal extraction electrode district 4 and the common electrode area 5 of each photosensitive unit two side.Photosensitive unit 3 is made of mercury cadmium telluride and the oxide layer 301 on it.Signal extraction electrode district 4 is made of the indium floor 401 on the mercury cadmium telluride thin slice, gold floor 402 successively.Common electrode area 5 is made of the indium layer 501 on the mercury cadmium telluride thin slice, gold layer 502 successively.Have a well to stretch electrode district 403 in the signal extraction electrode district 4, well is stretched electrode district by by the round hole of argon ion etching to substrate, is filled with the chromium metal level 4031 by vacuum coating, golden layer 4032, indium layer 4033 and gold layer 4034 in the circle hole successively and constitutes.Well is stretched the ball bonding district that electrode district 403 is drawn as signal, the not anti-anti-film in surface, and the introducing that well is stretched electrode district has solved the integrity problem that device electrode is drawn, but has also increased the area of electrode district simultaneously.Therefore, the anti-anti-film of large-area electrode district surface plating is even more important.Placing the anti-anti-film on photosensitive first array oxide layer 301 is the ZnS layer 302 of 1 micron thickness.The anti-anti-film of putting on signal extraction electrode district gold floor 402 and common electrode area gold floor 502 is that thickness is 150
～200
Indium layer 6.
The growth of device preparation of the present invention and anti-anti-film all is to adopt conventional semiconductor device to prepare equipment and process conditions, and choosing of anti-anti-membrane material and thickness is to determine through a large amount of experiments, especially indium film thickness, too thick meeting causes and comes off and reflection coefficient increases on the contrary, and too thin gold layer below then is exposed and do not have an effect of coverage.Indium film of antireflection coating is carried out oxygen plasma treatment, can further reduce the reflectivity of indium film.Fig. 3 is the reflectance curve figure on present embodiment electrode district surface, and curve 1 is the reflectance curve of the anti-film of electrode district nonreactive, the reflectance curve when curve 2 has the anti-anti-film of indium for electrode district, and curve 3 passes through reflectance curve after the oxygen plasma treatment for indium film of antireflection coating.Oxygen plasma treatment condition: oxygen flow: 7SCFH; Air pressure: 350mtorr; Strength frequency: 10.7MHz; Time: 8 minutes.After can seeing long indium layer, reflectivity drops to below 60%, and through after the oxygen plasma treatment, reflectivity continues to descend, and has reached best anti-reflection effect.Fig. 4 is the reflectance curve figure on the photosensitive unit of present embodiment surface, curve 1 is the reflectance curve on photosensitive first mercury cadmium telluride oxide layer surface, reflectance curve when curve 2 has the anti-anti-film of the ZnS of 1 micron thickness for photosensitive first surface, from following figure as can be seen, the reflectivity of anti-anti-film ZnS presents vibration, and is lower than the reflectivity that oxide layer is only arranged.
Claims (3)
1. the anti-anti-film of a very long wave HgCdTe infrared focal plane detector is characterized in that; Described anti-anti-film is ZnS anti-reflective film (302) and the signal extraction electrode district (4) and the common electrode area (5) last 150 of putting the 0.8-1.5 micron thickness on photosensitive first array (3) of very long wave HgCdTe infrared focal plane detector
Thick antireflection indium film (6).
2. according to the anti-anti-film of a kind of very long wave HgCdTe infrared focal plane detector of claim 1, it is characterized in that: said antireflection indium film (6) only is coated on the gold layer (402) of signal draw-out area (4).
3. the preparation method of the anti-anti-film of very long wave mercury cadmium telluride photoconduction infrared focal plane detector is characterized in that concrete steps are as follows:
§ a. utilizes the ZnS layer of conventional semiconductor technological condition growth 0.8-1.5 micron thickness on photosensitive first array of the mercury cadmium telluride photoconduction infrared focal plane detector for preparing;
§ b. utilizes conventional photoetching and masking method, in the argon ion coating machine, adopts high purity indium, and the signal extraction electrode district and the common electrode area of above-mentioned device are carried out ion film plating, and the indium film thickness is controlled at 150
～200
§ c. carries out oxygen plasma to long good indium film and handles treatment conditions again:
Throughput: 5-10ml/min;
Air pressure: 200-600mtorr;
Strength frequency: 8-12MHz;
Time: 6-20 minute.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100310164A CN100461435C (en) | 2006-09-11 | 2006-09-11 | Very-long-wave mercury cadmium telluride infrared focal plane detector antireflective membrane and its preparing method |
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|---|---|---|---|
| CNB2006100310164A CN100461435C (en) | 2006-09-11 | 2006-09-11 | Very-long-wave mercury cadmium telluride infrared focal plane detector antireflective membrane and its preparing method |
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| CN1937233A CN1937233A (en) | 2007-03-28 |
| CN100461435C true CN100461435C (en) | 2009-02-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100541808C (en) * | 2008-04-18 | 2009-09-16 | 中国科学院上海技术物理研究所 | The preparation method of HgCdTe long wave photoconductive infrared array detector and multi-layered electrode |
| CN101726364B (en) * | 2009-11-18 | 2011-04-27 | 中国科学院上海技术物理研究所 | Method for enhancing internal absorption factor of infrared focal plane array device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291036A (en) * | 1989-12-28 | 1994-03-01 | Minnesota Mining And Manufacturing Company | Amorphous silicon sensor |
| JP2001007354A (en) * | 1999-06-22 | 2001-01-12 | Fujitsu Ltd | Infrared detector and manufacture thereof |
| CN2511955Y (en) * | 2001-12-07 | 2002-09-18 | 中国科学院上海技术物理研究所 | Te-Cd-Hg multi-element infrared detector with stretching electrodes |
| CN1812137A (en) * | 2005-12-09 | 2006-08-02 | 中国科学院上海技术物理研究所 | Tellerium-cadmium-mercury infrared photoelectric detector with pit electrode |
-
2006
- 2006-09-11 CN CNB2006100310164A patent/CN100461435C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291036A (en) * | 1989-12-28 | 1994-03-01 | Minnesota Mining And Manufacturing Company | Amorphous silicon sensor |
| JP2001007354A (en) * | 1999-06-22 | 2001-01-12 | Fujitsu Ltd | Infrared detector and manufacture thereof |
| CN2511955Y (en) * | 2001-12-07 | 2002-09-18 | 中国科学院上海技术物理研究所 | Te-Cd-Hg multi-element infrared detector with stretching electrodes |
| CN1812137A (en) * | 2005-12-09 | 2006-08-02 | 中国科学院上海技术物理研究所 | Tellerium-cadmium-mercury infrared photoelectric detector with pit electrode |
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