CN100461335C - Method for forming a layer, method for manufacturing an active matrix substrate, and method for manufacturing a multilayered wiring substrate - Google Patents
Method for forming a layer, method for manufacturing an active matrix substrate, and method for manufacturing a multilayered wiring substrate Download PDFInfo
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- CN100461335C CN100461335C CNB200610126156XA CN200610126156A CN100461335C CN 100461335 C CN100461335 C CN 100461335C CN B200610126156X A CNB200610126156X A CN B200610126156XA CN 200610126156 A CN200610126156 A CN 200610126156A CN 100461335 C CN100461335 C CN 100461335C
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Abstract
A method for forming a layer includes: 1. disposing a first droplet to two parts on an base surface so as to form two dot patterns isolated each other on the base surface; 2. fixing the two dot patterns to the base surface; 3. giving lyophilicity with respect to a second droplet to at least the base surface between the two dot patterns; 4. disposing the second droplet to the base surface between the two dot patterns so as to join the two dot patterns after the step 3, wherein the third working procedure can be included in the working procedure having each one of the fixed two dot patterns disposed with the third droplet. Provided is a method with excellent dense form patterns disposing the droplet on the surface of the substrate.
Description
Technical field
[0001]
The present invention relates to follow layer formation method, the manufacture method of active-matrix substrate and the manufacture method of multi-layer wire substrate of the arrangement step of drop.
Background technology
[0002]
Use droplet ejection apparatus to form the technology of linear pattern, (patent documentation 1) is widely known by the people.
[0003]
[patent documentation 1] spy of Japan opens communique 2005-No. 34837
[0004]
Ink-jetting process (process) comprises the use droplet ejection apparatus, the liquid material that is known as functional liquid is configured in the operation of body surface.This droplet ejection apparatus, possess usually with functional liquid as the head of drop ejection and make this for the substrate surface bidimensionality that becomes object the mechanism that relatively moves.After adopting this structure, can be in the optional position of substrate surface, the drop that configuration is made of functional liquid.
[0005]
Utilize this ink-jetting process, when having no to cover with gap the substrate surface with the big area of the area that scatters than a droplets wet with functional liquid, a plurality of drops of configuration on this substrate surface just are so that overlap each other moistening scope of scattering.Like this, can form the pattern that has no to cover with gap this substrate surface., when this substrate surface has the fluidity of scolding to functional liquid, the power that drop near each other attracts under capillary effect each other, the power of attracting each other greater than substrate surface and drop just is so functional liquid can be concentrated locally.After this concentrate occurring, just can not cover substrate surface equably with functional liquid, during the worst situation, a part of substrate surface also exposes owing to lacking functional liquid.
Summary of the invention
[0006]
The present invention is at this problem development, and one of its purpose is to provide the method that droplet configuration is provided with good dense shape pattern (favorable pattern) at substrate surface.
[0007]
Of the present invention layer formation method comprises: the 1st operation, and this operation disposes the 1st drop, so that form 2 isolated mutually round point shape patterns on described substrate surface on each of 2 positions of substrate surface; The 2nd operation, this operation are fixed on the described substrate surface described 2 round point shape patterns; The 3rd operation, this operation make described substrate surface between described 2 round point shape patterns for the 2nd drop lyophilyization at least; The 4th operation, this operation after described the 3rd operation, the described substrate surface between described 2 round point shape patterns, configuration connects described the 2nd drop of the pattern of described 2 round point shapes.Here, described the 3rd operation also can be included in the operation that disposes the 3rd drop on each of fixing described 2 round point shape patterns respectively.In addition, described the 3rd operation can also comprise the operation to described substrate surface irradiation ultraviolet radiation, perhaps described substrate surface is exposed to the operation in the plasma.
[0008]
After adopting the 2nd operation, 2 round point shape patterns are fixed on substrate surface.So after the 2nd operation, 2 round point shape patterns are not just allowed movability on substrate surface.
[0009]
And then, adopt the 3rd operation after, connect in configuration before the 2nd drop of pattern of 2 round point shapes, the substrate surface between 2 round point shape patterns is by for the 2nd drop lyophilyization.Through after the 3rd operation, for substrate surface, the 2nd drop is not just allowed movability.
[0010]
Like this, after the 2nd operation and the 3rd operation, even when carrying out the 4th operation on the substrate surface, 2 round point shape patterns and the 2nd drop are connected to each other, and round point shape pattern and the 2nd drop are not all allowed movability yet on substrate surface.So, being not easy to occur the part set of functional liquid, its result can be reduced in the possibility that the cavity appears in the layer that forms on the substrate surface.
[0011]
In other sample attitude of the present invention, described layer formation method after described the 4th operation, can also comprise the activate of described 2 round point shape patterns or the 5th dry operation that make connection.
[0012]
After adopting above-mentioned feature, the layer that the round point shape pattern that is produced by the configuration drop finally forms, the possibility that the cavity occurs is little.
[0013]
In addition, in described layer formation method, at least one in average one volume of described the 2nd drop and average one volume of described the 3rd drop can be different with average one volume of described the 1st drop.
[0014]
Layer formation method of the present invention, comprise: the 1st operation, this operation disposes the 1st drop, so that can form a plurality of round point shape patterns of arranging with the array-like of the 1st direction the 2nd direction decision different with described the 1st direction on described substrate surface on each of a plurality of positions of substrate surface; The 2nd operation, this operation are fixed on the described substrate surface described a plurality of round point shape pattern; The 3rd operation, this operation between each of described a plurality of round point shape patterns that described the 1st direction array-like is arranged, dispose the 2nd drop respectively after described the 2nd operation, connect the pattern of described a plurality of round point shapes on described the 1st direction; The 4th operation, this operation between each of described a plurality of round point shape patterns that described the 2nd direction array-like is arranged, dispose the 3rd drop respectively after described the 3rd operation, connect the pattern of described a plurality of round point shapes on described the 2nd direction; The 5th operation, this operation between each of described a plurality of round point shape patterns that the compound direction array-like of described the 1st direction and described the 2nd direction is arranged, dispose the 4th drop respectively after described the 4th operation.
[0015]
After adopting above-mentioned feature, dispose each of a plurality of round point shape patterns of forming behind the 1st drop, be fixed on each of a plurality of positions of substrate surface.Its result, even substrate surface has the fluidity of scolding to the 1st drop, when the 2nd drop and the 3rd drop and the 1st drop were overlapping, the 1st drop did not move yet.
[0016]
Described layer formation method preferably and then also is included between described the 2nd operation and described the 3rd operation, with described the 6th operation of described substrate surface lyophilyization.Here, described the 6th operation also can comprise respectively the operation of configuration the 5th drop on each of described a plurality of round point shape patterns.In addition, described the 6th operation can also comprise the operation to described substrate surface irradiation ultraviolet radiation, perhaps described substrate surface is exposed to the operation in the plasma.
[0017]
One of effect that is formed by above-mentioned feature, even be on a plurality of round point shape patterns that formed during overlapping the 2nd drop, the 2nd drop can not be pulled to a side of a plurality of round point shape patterns yet.
[0018]
In other sample attitude of the present invention, described layer formation method, and then also be included in after described the 5th operation, make activate of described a plurality of round point shape pattern or the 7th dry operation.
[0019]
After adopting above-mentioned feature, the layer that the round point shape pattern that is produced by the configuration drop finally forms, the possibility that the cavity occurs is little.
[0020]
In addition, in described layer formation method, in average one volume of average one volume of average one volume of average one volume of described the 2nd drop, described the 3rd drop, described the 4th drop, described the 5th drop at least one can be different with average one volume of described the 1st drop.
[0021]
The manufacture method of active-matrix substrate of the present invention comprises: the 1st operation, and this operation disposes the 1st drop, so that form 2 isolated mutually round point shape patterns on described substrate surface on each of 2 positions of substrate surface; The 2nd operation, this operation are fixed on the described substrate surface described 2 round point shape patterns; The 3rd operation, this operation make described substrate surface between described 2 round point shape patterns for the 2nd drop lyophilyization at least; The 4th operation, this operation after described the 3rd operation, the described substrate surface between described 2 round point shape patterns, configuration connects described the 2nd drop of the pattern of described 2 round point shapes.
[0022]
The manufacture method of multi-layer wire substrate of the present invention comprises: the 1st operation, and this operation disposes the 1st drop, so that form 2 isolated mutually round point shape patterns on described substrate surface on each of 2 positions of substrate surface; The 2nd operation, this operation are fixed on the described substrate surface described 2 round point shape patterns; The 3rd operation, this operation make described substrate surface between described 2 round point shape patterns for the 2nd drop lyophilyization at least; The 4th operation, this operation after described the 3rd operation, the described substrate surface between described 2 round point shape patterns, configuration connects described the 2nd drop of the pattern of described 2 round point shapes.
Description of drawings
Fig. 1 is expression and the schematic diagram of the block of the surperficial corresponding present embodiment of substrate.
Fig. 2 is the figure that is illustrated in the order of configuration drop D on the block.
Fig. 3 is illustrated in the figure that C11 goes up the operation of configuration drop D.
Fig. 4 is illustrated in the figure that C31 goes up the operation of configuration drop D.
Fig. 5 is illustrated in the schematic diagram that C31 goes up the linear pattern that obtains behind the configuration drop D.
Fig. 6 is illustrated in the figure that C13 goes up the operation of configuration drop D.
Fig. 7 is illustrated in the schematic diagram that C13 goes up the lattice-like pattern that obtains behind the configuration drop D.
Fig. 8 is illustrated in the figure that C33 goes up the operation of configuration drop D.
Fig. 9 is illustrated in the schematic diagram that C33 goes up the dense shape pattern that obtains behind the configuration drop D.
Figure 10 is the schematic diagram of the conductive layer that obtains after the dense shape pattern activate of expression with Fig. 9.
Figure 11 is the figure that is illustrated in other orders of configuration drop D on the block.
Figure 12 is the figure that is illustrated on the block another other order of configuration drop D.
Figure 13 is the figure that is illustrated on the block another other order of configuration drop D.
Figure 14 is the schematic diagram after the part of the active-matrix substrate of present embodiment is amplified.
Figure 15 is the schematic diagram of section of the active-matrix substrate of expression present embodiment.
Figure 16 is the figure of manufacture method of telling about the active-matrix substrate of present embodiment.
Figure 17 is the schematic diagram of structure of the multi-layer wire substrate of expression present embodiment.
Figure 18 is the figure of manufacture method of telling about the multi-layer wire substrate of present embodiment.
Figure 19 is the figure of manufacture method of telling about the multi-layer wire substrate of present embodiment.
Embodiment
[0023]
After the layer formation method of telling about below the employing,, the conductive layer 8 (Figure 10) of dense shape is set finally at surface (Fig. 1) configuration drop as the substrate 10A of substrate surface.Then, the operation of configuration drop in layer formation method utilizes suitable droplet ejection apparatus to carry out.Here, droplet ejection apparatus example is an ink discharge device.
[0024]
Droplet ejection apparatus specifically, possesses: the head of ejection drop; Place the platform of the substrate 10A of configuration drop; Make the head and platform at least one another is relatively moved, make the mechanism of women's head-ornaments to the optional position on the substrate 10A.And, by the volume of drop ejection, variable between below the above 42pl of 1.5pl (picoliter).In the droplet ejection apparatus of this structure, head is behind the ejection of the given position on substrate 10A drop, just at this given position configuration drop.
[0025]
But, also can not utilize droplet ejection apparatus sometimes.Specifically, so long as can just can carry out of the present invention layer of formation method with the form of drop device at substrate surface configuration feature liquid.For example can replace droplet ejection apparatus, with little pipette configuration drop.And the volume of drop both can be less than 1.5pl, also can be greater than 42pl.
[0026]
Below, specifically tell about the layer formation method of present embodiment.
[0027]
(1, block)
As shown in Figure 1, with imaginary a plurality of blocks 1, corresponding with the scope that forms conductive layer in the surface of substrate 10A at least.These a plurality of blocks 1 are arranged in the array-like by X-direction and Y direction decision.Here, the length along X-direction separately of a plurality of blocks 1 is 11 μ m; Along the length of Y direction, be 15 μ m.In addition, X-direction and Y direction are the directions of mutually orthogonal.And substrate 10A is the substrate that is made of polyimides, has banded shape.In the present embodiment, the surface of substrate 10A is an example of substrate surface of the present invention.To need to form the scope of conductive layer in this substrate surface, also souvenir is " a layer formation scope ".
[0028]
Each of a plurality of blocks 1 is that the zone that can dispose drop is the position.In the present embodiment, when certain block 1 configuration drop, make the center of the drop of the center of this block 1 and configuration roughly as one man dispose drop.In addition, the spacing of the X-direction of a plurality of blocks 1, corresponding with the minimum distance between centers of 2 drops adjacent on X-direction.Equally, the spacing of the Y direction of a plurality of blocks 1, corresponding with the minimum distance between centers of 2 drops adjacent on Y direction.In addition, in Fig. 1,, depict 144 (12 * 12) blocks, but the number of actual block 1 is not limited thereto for the ease of telling about.
[0029]
And each is defined as block group 1G with the set of 16 blocks 1 of 4 blocks * 4 block determining.And in order to discern each of 1 16 block 1 among the block group 1G, each of these 16 blocks 1 is with symbol (for example C11) souvenir of the suffix formation of letter " C " and two figure places.Here, the numerical value on suffix right side along the position of Y direction, is 1～4 integer among the expression block group 1G.On the other hand, the numerical value in suffix left side, the position of X-direction among the expression block group 1G is 1～4 integer.
[0030]
Then, be conceived to a plurality of C11 after, on the surface of substrate 10A, a plurality of C11 are in the array-like that is being arranged in by the decision of X-direction and Y direction.Specifically, a plurality of C11 periodically are positioned at given position on X-direction, Y direction and their compound direction U.In the present embodiment, the distance between centers of adjacent any 2 C11 on X-direction all is 44.0 μ m.In addition, the distance between centers of adjacent any 2 C11 on Y direction all is 60.0 μ m.And then the distance between centers of adjacent any 2 C11 on the compound direction U of X-direction and Y direction all is 74.4 μ m.In addition, the compound direction U of X-direction and Y direction is the diagonal of block 1.
[0031]
(2, functional liquid)
, the operation of conductive layer 8 is set here, comprises the operation of the drop of configuration feature liquid.So-called " functional liquid " is meant as nozzle liquid material ejection, that have viscosity of drop from the head setting of droplet ejection apparatus." functional liquid " both can be water-based, also can be oiliness.Can be as long as have from the flowability (viscosity) of nozzle ejection, even sneak into solid matter, as long as be liquid as a whole.The viscosity of " functional liquid " is preferably in below the above 50mPas of 1mPas.If viscosity is more than 1mPas, when the drop of ejection " functional liquid ", the peripheral position of nozzle just is difficult for being polluted by " functional liquid ".On the other hand, if viscosity below 50mPas, the frequency of spray nozzle clogging is just lower, can spray slicker and more sly drop.
[0032]
The functional liquid of present embodiment comprises dispersant and as the silver of conductive material.Here, the silver in the functional liquid, the form of employing silver granuel, the average grain diameter of this silver granuel is about 10nm.And in functional liquid, the silver granuel applying coating with the silver granuel of applying coating, can stably disperse in dispersant.In addition, average grain diameter is that 1nm arrives the particle about hundreds of nm, goes back souvenir and is " nano particle ".After adopting this souvenir, functional liquid comprises the nano particle of silver.
[0033]
As dispersant (or solvent), so long as can and not cause that the material of cohesion gets final product with the dispersion of electrically conductive microparticles such as silver granuel, there is no particular limitation.For example, except water, can also enumerate: methyl alcohol, ethanol, propyl alcohol, alcohol types such as butanols, n-heptane, n-octane, decane, dodecane, the tetradecane, toluene, dimethylbenzene, cymol, dull coal, indenes, dipentene, tetrahydronaphthalene, decahydronaphthalenes, hydrocarbons such as cyclohexylbenzene, or ethylene glycol, dimethyl ether, ethylene glycol diethyl ether, the Ethylene Glycol Methyl ethylether, diethyl carbitol, the diethylene glycol (DEG) methyl ethyl ether, Ethyl Methyl Ether, two (2 one methoxyl group) ethanol, alcohol compounds such as P one dioxanes, and propene carbonate, r one fourth lactones, N monomethyl one pyrrolidones, dimethyl formamide, methyl-sulfoxide, cyclohexanone isopolarity compound.Wherein, on aspect the stability of the dispersiveness of electrically conductive microparticle and dispersion liquid and the easy degree in drop ejection method, used, say, preferably make water, alcohol type, hydrocarbon, alcohol compound.As better dispersant, can enumerate water, hydrocarbon.
[0034]
In addition, above-mentioned coating, be can with the compound of silver atoms coordination.As coating, amine, ethanol, sulfo-etc. are widely known by the people.In particular, the amines that 2-methyl aminoethanol, diethanol amine, diethyl methylamine, 2-dimethylamino-ethanol, first (replacing) diethanol amine etc. are arranged, alkyl amine, ethylene diamin(e), alkyl alcohol class, ethylene glycol, propylene glycol, alkylthio class, dithioglycol etc.The nano particle of the silver that covers with coating can more stably disperse in dispersant.
[0035]
The configuration sequence of drop (3)
Below, as benchmark, the layer formation scope corresponding with 9 blocks * 9 blocks is arranged on dense shape pattern all continuous on X-direction, Y direction and the compound direction U with the upper right block 1 of Fig. 2.Here so-called " dense shape pattern " is through becoming the layer of conductive layer after the activate operation of hereinafter telling about.In addition, the drop of configuration is owing to there being some moistening expansions from the teeth outwards, so the layer corresponding with 9 blocks * 9 blocks forms the area of scope, greater than the area of 9 blocks * 9 blocks.
[0036]
Undoubtedly, in other practical range, layer formation scope can be corresponding in addition with 9 blocks * 9 blocks.For example, a layer formation scope both can be and the scope that 100 blocks * 100 blocks are corresponding, also can with the scope that 1 block * 5 blocks are corresponding.Perhaps, 1) it is corresponding with the outermost that layer forms scope to comprise the row or column of C11, and/or 2) C11 and layer form a jiao of scope a layer formation scope be set accordingly.In addition, so-called here " OK " is meant the set of the block 1 that forms a line on X-direction; So-called " row " are meant the set of the block 1 that forms a line on Y direction.
[0037]
Below, with reference to Fig. 2, tell about operation at layer formation scope configuration drop.As shown in Figure 2, in any one of a plurality of block group 1G (Fig. 1), the order of configuration drop is all identical.Specifically, in any one of a plurality of block group 1G, the order of configuration drop all is the order of C11, C31, C13, C33.
[0038]
But at upper left block group 1G that is arranged in Fig. 2 and the block group 1G that is positioned at left side central authorities, C11, C13 are corresponding with layer formation scope, and C31, C33 are not corresponding with layer formation scope.Therefore, in these block groups 1G, skipped to the configuration drop of C31, C33.Equally, the block group 1G in the lower-left that is arranged in Fig. 2, C11 is corresponding with layer formation scope, to form scope not corresponding and C31, C13, C33 are with layer.Therefore, in this block group 1G, skipped to the configuration drop of C31, C13, C33.And then at the block group 1G and the block group 1G that is positioned at the bottom right that are arranged under the central authorities of Fig. 2, C11, C31 are corresponding with layer formation scope, and C13, C33 are not corresponding with layer formation scope.Therefore, in these block groups 1G, skipped to the configuration drop of C13, C33.
[0039]
(arrangement step of 3A, basic round dot)
At first, set the diameter of hitting of drop for 30 μ m.So-called " hitting diameter " can be described as the diameter in the drop that disposes on the substrate 10A moistening scope of scattering on substrate 10A.Here, because the shape of firm drop after the nozzle ejection of droplet ejection apparatus, for emission direction, roughly axial symmetry so be mapped to the shape of the drop scope behind the substrate 10A, roughly becomes circle.In this manual, will be mapped to the drop on the substrate 10A or the scope of drop, also souvenir is " round dot ".
[0040]
Then, as shown in Figure 3, form 1 drop D of configuration on each of a plurality of C11 of scope at layer respectively.In other words, in each of a plurality of block group 1G, configuration drop D on 1 of 4 blocks 1 corresponding with four jiaos.At this moment, make the middle heart configuration drop D that is centered close to C11 of drop D.In addition, in the scope corresponding with block group 1G, also with the drop D of initial configuration, souvenir is " a basic round dot ".
[0041]
As mentioned above, because the diameter of hitting of drop D is 30 μ m, so behind configuration drop D on the C11, drop D just is diffused into the scope of 15 μ m from the center of C11.Then, its result obtains round point shape pattern 4.Here, in the heart distance is 44 μ m in X-direction 2 C11 adjacent to each other, and in the heart distance is 60 μ m in Y direction 2 C11 adjacent to each other.And then, on the compound direction U of X-direction and Y direction 2 C11 adjacent to each other in the heart distance be approximately 74.4 μ m.So, the round point shape pattern 4 on the C11 arbitrarily, not with the C11 of adjacency on round point shape pattern 4 join.In other words, the round point shape pattern 4 on the C11 arbitrarily, all isolated mutually with the round point shape pattern 4 on the C11 of adjacency.
[0042]
The result of above operation, on the surface of substrate 10A, a plurality of round point shape patterns 4 are arranged in the array-like by X-direction and Y direction decision respectively isolatedly.In addition, because a plurality of C11 and a plurality of round point shape pattern 4 correspondences, so the quantity of C11 is identical with the quantity of round point shape pattern 4.In addition, be " reference area " also with the C11 souvenir
[0043]
(the fixedly operation of 3B, basic round dot)
Then, be fixed on each drop D of configuration on each of a plurality of C11.In other words, a plurality of round point shape patterns 4 are fixed on the corresponding C11.Specifically, make round point shape pattern 4 be dried to the degree that solvent (or dispersant) gasifies from the functional liquid that constitutes round point shape pattern 4.In the present embodiment, hot blast is blown to from hair-dryer on the round point shape pattern 4 on each of a plurality of C11.Usually, have on the surface of scolding fluidity, functional liquid moves easily., in the present embodiment, because the dry like this round point shape pattern 4 that constitutes by functional liquid, so round point shape pattern 4 just loses flowability.Therefore, round point shape pattern 4 is fixed by C11.Its result, the round point shape pattern 4 on the C11 even be connected with each the drop D that disposes on C31, C13 and C33 later, also can reduce to C31, C13 or the close possibility of C33.Therefore, the possibility in the final conductive layer appearance cavity that obtains diminishes.
[0044]
(3C, lyophilyization)
Then, though do not illustrate, the lyophily processing is carried out on the surface of substrate 10A.In the present embodiment, on fixing round point shape pattern 4, configuration drop D.In other words, on each of a plurality of C11, dispose a drop D once more respectively.So for the drop D that disposes on C31 later, C31 is lyophily.Its result, the drop D that disposes on C31 is even be connected with drop D that disposes on C31 or round point shape pattern 4, to close can property also the diminishing of C11.Therefore, the possibility in the final conductive layer appearance cavity that obtains diminishes.In addition, after disposing drop D once more on the C11, the surface of substrate 10A (C31) is the mechanism of lyophily, can't understand fully.But the inventor infers at present: be the solvent atmosphere that the drop D that disposes once more brings, impel substrate 10A or C31 to present lyophily.
[0045]
Here, the volume of drop D of configuration once more on C11 can be less than the volume of the drop D of initial configuration on C11.Specifically, can be when C31 present lyophily, make round point shape pattern 4 on the C11 continue not the drop D of the volume of the degree that is connected with adjacent round point shape pattern 4 in configuration on the C11 once more.Undoubtedly, the volume of drop D of configuration once more on C11 also can be greater than the volume of the drop D of initial configuration on C11.
[0046]
In addition, for functional liquid, when substrate 10A is to a certain degree lyophily, also can omit above-mentioned lyophily chemical industry preface.
[0047]
(3D, the 1st connects the arrangement step of round dot)
After C11 in the layer formation scope disposes drop D, will set 32 μ m for by the diameter of hitting of the drop D of droplet ejection apparatus ejection.In other words, change the drive waveforms of droplet ejection apparatus, so that the ejection volume is greater than the drop D of the volume of the drop D of C11 configuration.In addition, change the detailed content of technology (realizing the technology of so-called variable round dot) of the drive waveforms of droplet ejection apparatus, in the spy opens Fig. 5～Fig. 8 of 2001-No. 58433 communiques, telling about, so do not repeat them here.
[0048]
Then, as shown in Figure 4, dispose a drop D respectively on each of a plurality of C31 in layer formation scope.At this moment, make the middle heart configuration drop D that is centered close to C31 of drop D.Here, C31 is located at the centre of two adjacent on X-direction C11.Therefore, C31 and and the hithermost C11 of C31 between distance, be 22 μ m.And the round point shape pattern 4 on the C11 is diffused into the scope of 15 μ m from the center of C11.On the other hand, on C31, drop D is diffused into the scope of 16 μ m from the center of C31.Therefore, be connected with round point shape pattern 4 on the C11 at the drop D that disposes on the C31, in addition, in this manual, the drop D souvenir that also will dispose on C31, C13, C33 is " a connection round dot ".
[0049]
Like this, in this operation, for C11, be positioned at configuration drop D on the C31 of X-direction.Then, round point shape pattern 4 extends to X-direction.And then in this operation, a plurality of round point shape patterns 4 of arranging on X-direction connect on X-direction.And, after the C11 in the layer formation scope has disposed drop D, as shown in Figure 5, a plurality of linear pattern 5 that constitute by at the drop D that disposes on the C11 and the drop D that disposes appear on C31.Each of these linear pattern 5, when X-direction is extended, also isolated mutually.
[0050]
(3E, the 2nd connects the arrangement step of round dot)
After C31 in the layer formation scope has disposed drop D, will set 32 μ m for by the diameter of hitting of the drop D of droplet ejection apparatus ejection.Then, as shown in Figure 6, dispose a drop D respectively on each of a plurality of C13 in layer formation scope.At this moment, make the middle heart configuration drop D that is centered close to C13 of drop D.Here, C13 is located at the centre of two adjacent on Y direction C11.Therefore, C13 and and the hithermost C11 of C13 between distance, be 30 μ m.And the drop D of the configuration on the C11 is diffused into the scope of 15 μ m from the center of C11.On the other hand, on C13, drop D is diffused into the scope of 16 μ m from the center of C13.Therefore, the drop D that disposes on C13 is connected with linear pattern 5.
[0051]
Like this, in this operation, for C11, be positioned at configuration drop D on the C13 of Y direction.Then, each of a plurality of linear pattern 5 is extended to X-direction.And then in this operation, these a plurality of linear pattern 5 connect on Y direction.And, as shown in Figure 7, after the C13 in the layer formation scope has disposed drop D, the lattice-like pattern 6 that constitutes by at the drop D that disposes on the C11, at the drop D that disposes on the C31 and the drop D that disposes appears on C13.
[0052]
(3F, the 3rd connects the arrangement step of round dot)
After C13 in the layer formation scope has disposed drop D, will set 32 μ m for by the diameter of hitting of the drop D of droplet ejection apparatus ejection.Then, as shown in Figure 8, dispose a drop D respectively on each of a plurality of C33 in layer formation scope.At this moment, make the middle heart configuration drop D that is centered close to C33 of drop D.Here, C33 is located at the centre of two adjacent on the compound direction U of X-direction and Y direction C11.And the drop D that disposes on C33 buries the cavity of the lattice-like pattern 6 that is made of the drop D that has been configured.Therefore, behind configuration drop D on the C33, the lattice-like pattern 6 that is made of the drop D that has been configured just extends to compound direction U.
[0053]
And then, after the C33 in the layer formation scope has disposed drop D, as shown in Figure 9, occur by at the drop D that disposes on the C11, the dense shape pattern 7 that constitutes at the drop D that disposes on the C31, at the drop D that disposes on the C13 and the drop D that on C33, disposes.In the present embodiment, the layer formation scope corresponding with lip-deep 9 blocks * 9 blocks of substrate 10A had no to cover with gap by dense shape pattern 7.In addition, as mentioned above, owing to drop D spreads from the teeth outwards, so the area that dense shape pattern 7 covers (layer forms the area of scope) is more some greatly than the area of 9 blocks * 9 blocks.
[0054]
Like this, in layer formation scope, on C11, C31, C13, C33, according to this order, configuration drop D separately.Like this, even the surface of substrate 10A has the fluidity of scolding, also can under the effect of the drop D of configuration on these 4 kinds of blocks 1, form each continuous dense shape pattern 7 by C11 and X-direction, Y direction and compound direction U.In other words, form the dense shape pattern 7 that does not have the cavity.
[0055]
(3G, activate operation)
Then, with dense shape pattern 7 activates.In the present embodiment, specifically, with 7 heating of dense shape pattern, so that make the silver granuel sintering in the dense shape pattern 7 or melting.So, under the effect of sintering or the silver granuel that melting, in the dense shape pattern 7 conductivity appears, and its result can obtain conductive layer shown in Figure 10 8.
[0056]
During the lack of homogeneity of the thickness of the conductive layer 8 of acquisition, can before activate, as shown in figure 11, in block group 1G separately, and then dispose 12 drop D here.Specifically, can be on the basis of 4 blocks 1 such as C11, C31, C13, C33, again on each of 12 blocks 1 such as C21, C41, C23, C43, C12, C32, C14, C34, C22, C42, C24, C44, according to this order, configuration drop D.In other words, can on all blocks 1 among the block group 1G, all dispose drop D.Like this, can obtain more uniform conductive layer 8 of thickness.In addition, append the volume of 12 drops of configuration, can be less than the volume of previous 4 drops that dispose.
[0057]
Like this, after the employing present embodiment, at first on substrate 10A, dispose a plurality of round point shape patterns 4.Then, appearance is to a plurality of linear pattern 5 of X-direction extension.Again then, a plurality of linear pattern 5 connect in Y direction, form lattice-like pattern 6.At last, the spatial configuration drop D remaining forms the continuous dense shape pattern 7 in two-dimentional shape ground.Then, make dense shape pattern 7 activates after, can obtain not have the conductive layer 8 in cavity.
[0058]
The configuration sequence of drop D in the block group 1G is not limited to above-mentioned order, to the order between a plurality of block group 1G without limits.For example, when going up configuration drop D, constitute a plurality of block group 1G of row that extend to X-direction, can roughly handle simultaneously at the block 1 of identical type (for example 11).Equally, constitute a plurality of block group 1G of row that extend to Y direction, also can roughly handle simultaneously.In addition, when disposing drop D on the block 1 of identical type, whenever next block group 1G handles on ground successively.
[0059]
And then, and the sequence independence between the block group 1G, after the layer formation method of employing present embodiment, in the process of formation as the conductive layer 8 of purpose, before lattice-like pattern 6, the linear pattern 5 of extending to X-direction appears., the present invention is not limited to this form.Specifically, also can dispose drop D,, the linear pattern 5 of extending occur to Y direction so that before lattice-like pattern 6.Specifically, as shown in figure 12, can be according to the order of C11, C31, C13, C33, on each of this 4 blocks 1, configuration drop D separately.And then, as shown in figure 13, can be on the basis of C11, C31, C13, C33, again on each of C12, C14, C32, C34, C21, C23, C41, C43, C22, C24, C42, C44, according to this order, configuration drop D.Like this, can obtain more uniform conductive layer 8 of thickness.
[0060]
The manufacture method of active-matrix substrate (4)
The present invention can use when making active-matrix substrate.At first, with reference to accompanying drawing, tell about an example using active-matrix substrate of the present invention.Active-matrix substrate of the present invention as switch element, possesses TFT (Thin Film Transistor) element.
[0061]
(example of 4A, active-matrix substrate)
Figure 14 is the schematic diagram after the part of the active-matrix substrate of present embodiment is amplified.Figure 15 is the schematic diagram of section of the active-matrix substrate of expression present embodiment.
[0062]
Active-matrix substrate 20 as shown in figure 14, possesses substrate 21, gate insulating film 31 (with reference to Figure 15), active layer 32, contact layer 33, grid wiring 40, gate electrode 41, source wiring 42, source electrode 43 and drain electrode 44.And, comprise the part of gate insulating film 31, active layer 32, contact layer 33, gate electrode 41, source electrode 43 and drain electrode 44, be TFT30.And then in the present embodiment, pixel capacitors 45 is positioned on the active-matrix substrate 20.
[0063]
A plurality of grid wirings 40 on substrate 21, extend to X-direction.Grid wiring 40 separately is connected with each gate electrode 41 on the substrate 21.On the other hand, gate insulating film 31 covers a plurality of grid wirings 40 and a plurality of gate electrode 41.A plurality of gate electrodes 41 on gate insulating film 31, extend to Y direction.In addition, X-direction and Y direction are orthogonal.
[0064]
Semiconductor layer is positioned on the gate insulating film 31.Here, with semiconductor layer in the semiconductor layer and the part that gate electrode 41 overlaps each other, souvenir is " active layer 32 of TFT30 ".Below, be conceived to a TFT30 and tell about.
[0065]
On active layer 32, spaced-apart two contact layers 33 giving set a distance are being set.Source electrode 43 is positioned on the contact layer 33, and drain electrode 44 is positioned on another contact layer 33.Source electrode 43 and corresponding source wiring 42 electrical connections.In addition, drain electrode 44 is done media by contact hole 45 (aftermentioned), with corresponding pixel capacitors 45 electrical connections.
[0066]
Source wiring 42, source electrode 43,44,2 contact layers 33 of drain electrode and active layer 32 are covered by the interlayer insulating barrier.One of function of interlayer insulating film is to absorb to result from substrate concavo-convex of source wiring 42, active layer 32 etc., and the surperficial S of general planar is provided.In addition, though will tell about later, the interlayer insulating film of present embodiment comprises a plurality of cofferdam 61 and a plurality of insulation material layer 65.
[0067]
Run through the contact hole 66 that interlayer insulating film arrives drain electrode 44, be located on the drain electrode 44.In addition, pixel capacitors 45 is positioned on the surperficial S of interlayer insulating film.And drain electrode 44 and pixel capacitors 45 are touched the electric conductor that is provided with in the hole 66 and connect.
[0068]
(example of the manufacture method of 4B, active-matrix substrate)
Then, with reference to accompanying drawing, tell about an example of the manufacture method of using active-matrix substrate of the present invention.Figure 16 is the figure of manufacture method of telling about the active-matrix substrate of present embodiment.At first, prepared substrate 21.The material of substrate 21 can use various materials such as glass, quartz glass, Si wafer, plastic film, metallic plate.In addition, substrate 21 can also as the substrate surface layer, form semiconductor film, metal film, dielectric film, organic membrane etc. on the surface of these various materials.
[0069]
Then, shown in Figure 16 (a), on washed substrate 21, for example adopt the photoengraving art, form the cofferdam 51 of 1/20～1/10 the peristome 52 be intended to be provided with a pixel pitch.In the present embodiment, owing to cofferdam 51 possesses photopermeability and scolds fluidity after formation, so, can suitably use macromolecular materials such as propylene, polyimides, alkene, melamine as material.The processing of scolding fluidity on surface is implemented to be intended to improve in cofferdam 51 after formation, but also can replace, and scolds liquid composition (fluorine-based etc.) to the filling of the material in cofferdam 51 own in advance.At this moment, can omit the processing of scolding fluidity that is intended to improve the surface etc.
[0070]
Then, adopt ink-jetting process, the drop of configuration feature liquid is so that in the peristome 52 of filling with cofferdam 51 divisions, form grid wiring 40 (not shown) and gate electrode 41.Here, the electrically conductive microparticle as functional liquid contains for example except the metal particle that contains gold, silver, copper, tin, lead etc., can also use their oxide and the particulate of conductive poly zoarium and superconductor etc.These electrically conductive microparticles, also can in order to improve dispersiveness in back uses such as surface applied organic substances.
[0071]
At this moment and since give in advance cofferdam 51 enough scold fluidity, so can form not the pattern of the trickle grid wiring 40 that overflows from peristome 52.And, behind dry through preparation then, the firing process, can on substrate 21, form have by cofferdam 51 and grid wiring 40, gate electrode 41 constitute smooth above layer.In addition, in order in peristome 52, to obtain good ejection result, shown in Figure 16 (a),, preferably adopt open horn-like towards ejection side as the shape of this peristome 52.Like this, can make the droplet jet of functional liquid of ejection to the bosom.
[0072]
Then, shown in Figure 16 (b), adopt layer formation method of the present invention, form gate insulating film 31.But the conductive layer that replaces the dense shape in the execution mode that preamble tells about forms the insulating barrier of dense shape.In order to form the insulating barrier of dense shape, can replace electric conducting material, prepare to contain the functional liquid of insulating material.Here, this functional liquid as insulating material, can suitably contain the insulating resin of photo-hardening and the organic solvent of this insulating resin of dissolving.And, when functional liquid contained this insulating material, fixedly operation that preamble is told about and activate operation all were for the insulating resin that hardens, and the round point shape pattern that constitutes by functional liquid with rayed or the operation of dense shape pattern, or with the operation of these round point shape patterns or the heating of dense shape pattern.In addition, here, concerning gate insulating film 31, the surface of grid wiring 40 and gate electrode 41 is its substrate surfaces.
[0073]
Then, adopt plasma CVD method, carry out the continuous film forming of active layer 32 and contact layer 33.Specifically, unstrpped gas and plasma condition are changed, thereby, form amorphous silicon film as active layer 32; As contact layer 33, form n+ type silicon fiml.When adopting the CVD method to form, need be through 300 ℃～350 ℃ heat treatment.But when in the cofferdam, using the material of mineral-type, can avoid the relevant transparency, stable on heating problem.
[0074]
Then, shown in Figure 16 (c), on gate insulating film 31, for example adopt the photoengraving art, form the cofferdam 61 of 1/20～1/10 and the peristome 62 that intersects with peristome 52 be intended to be provided with a pixel pitch.In the present embodiment, owing to cofferdam 61 possesses photopermeability and scolds fluidity after formation, so, can suitably use macromolecular materials such as propylene, polyimides, alkene, melamine as material.The processing of scolding fluidity on surface is implemented to be intended to improve in cofferdam 61 after formation, but also can replace, and scolds liquid composition (fluorine-based etc.) to the filling of the material in cofferdam 61 own in advance.At this moment, can omit the processing of scolding fluidity that is intended to improve the surface etc.
[0075]
Then, adopt ink-jetting process, the drop of configuration feature liquid, so that cover the face that exposes with gate insulating film 31, active layer 32 and contact layer 33 in the peristome 62 of cofferdam 61 divisions, shown in Figure 16 (d), form the source wiring 42 (not shown), source electrode 43 and the drain electrode 44 that intersect with grid wiring 40.The time, the electrically conductive microparticle that contains as functional liquid for example except the metal particle that contains gold, silver, copper, aluminium etc., can also use their oxide and conductive poly zoarium etc.Source wiring 42, source electrode 43 and drain electrode 44 and since give in advance cofferdam 61 enough scold fluidity, so can form the trickle wiring pattern that does not overflow from peristome 62.
[0076]
Then, configuration insulation material layer 65 is so that the peristome 62 of source wiring 42, source electrode 43 and drain electrode 44 has been disposed in filling.Like this, on substrate 21, form 65 that constitute by cofferdam 61 and insulation material layer, have a smooth top layer.Then, as shown in figure 15, on insulation material layer 65, form contact hole 66.Like this, just can produce active-matrix substrate 20.
[0077]
In the present embodiment, and then use of the present invention layer formation method, in cofferdam 61, a plurality of insulation material layer 65 and above the contact hole 66, form pixel capacitors 45.As the method that forms pixel capacitors 45, can use the formation method of the conductive layer of the dense shape in the execution mode that preamble tells about.Because pixel capacitors 45 is transparency electrodes, so as the electrically conductive microparticle that is comprised by this material, for example use ITO.Pixel capacitors 45 is done media by contact hole 66, is electrically connected with drain electrode 44.In addition, here, concerning pixel capacitors 45, the surface of insulation material layer 65 and contact hole 66 is its substrate surfaces.
[0078]
In the present embodiment, according to the formation method of the insulating barrier of dense shape, form gate insulating film 31, the formation method according to the conductive layer of dense shape forms pixel capacitors 45.Like this, final insulating barrier and the conductive layer that obtains, the possibility that the cavity occurs is little.In addition, when using this active-matrix substrate 20 to constitute liquid crystal indicators, on pixel capacitors 45, form and be intended to oriented film (not shown) that the molecule of liquid crystal is arranged towards certain orientation.But when forming this oriented film, also can use layer formation method of the present invention.In addition, when using active-matrix substrate 20 to constitute liquid crystal indicator, can also on active-matrix substrate 20, design maintenance capacity line.
[0079]
The manufacture method of multi-layer wire substrate (5)
The present invention also can use when making multi-layer wire substrate.At first, with reference to accompanying drawing, tell about an example using multi-layer wire substrate of the present invention.The multi-layer wire substrate of present embodiment on a face of substrate, forms multilayer wiring.
[0080]
(example of 5A, multi-layer wire substrate)
Figure 17 is the schematic diagram of structure of the multi-layer wire substrate of expression present embodiment.Multi-layer wire substrate 70 as shown in figure 17, possesses: substrate 71, and conductive pattern 72, conductive pole 73, by the insulating barrier 74 that auxiliary insulating layer 81,82 constitutes, a plurality of pseudo-posts 75, insulating barrier 76, conductive layer 77.
[0081]
(example of the manufacture method of 5B, multi-layer wire substrate)
Then, with reference to accompanying drawing.Tell about an example of the manufacture method of using multi-layer wire substrate of the present invention.Figure 18 and Figure 19 are the figures of manufacture method of telling about the multi-layer wire substrate of present embodiment.
[0082]
At first, prepare the sort of matrix 70A shown in Figure 18 (a).Matrix 70A possesses substrate 71 and the conductive pattern 72 that is positioned on the substrate 71.Here, substrate 71 is substrates of the softness that is made of polyimides.Substrate 71 has trumpet-shaped shape, so therefore also substrate 71 is called " loudspeaker substrate ".In addition, in the present embodiment, so-called " matrix 70A " is to comprise substrate 71 and the general name of the more than one pattern of setting on substrate 71 or layer.
[0083]
Then, shown in Figure 18 (b), adopt ink-jetting process, conductive pole 73 is set on the part of conductive pattern 72.Conductive pole 73 adopts the electric conducting material formation that comprises conductive layer 77 the being adjacent to property excellences of hereinafter telling about.In the present embodiment, because conductive layer 77 is made of silver,, conductive pole 73 constitutes so also containing silver-coloredly.Therefore, conductive pole 73 and conductive layer 77 can be adjacent to.
[0084]
After forming conductive pole 73,, form insulating barrier 74 as Figure 18 (c) and (d).Insulating barrier 74 also covers conductive pattern 72 in the bottom of the side that surrounds conductive pole 73.Here, as following telling about, use layer formation method of the present invention and form insulating barrier 74, it is made of mutual stacked 2 auxiliary insulating layers 81,82.
[0085]
At first, in the lip-deep part of substrate 71, do not form the part of conductive pattern 72, form auxiliary insulating layer 81 (Figure 18 (c)).As the method that forms auxiliary insulating layer 81, can use the formation method of the insulating barrier of dense shape.Here, the thickness of auxiliary insulating layer 81 is roughly set with the consistency of thickness ground of conductive pattern 72.Therefore, after forming auxiliary insulating layer 81, the surface of the surface of auxiliary insulating layer 81 and conductive pattern 72 roughly is positioned at identical level.In addition, the auxiliary insulating layer 81 of present embodiment contains allyl resin.In addition, here, the surface of substrate 71 is substrate surfaces of auxiliary insulating layer 81.
[0086]
Then, on the face of conductive pattern 72 and auxiliary insulating layer 81, form auxiliary insulating layer 82 (Figure 18 (d)).As the method that forms auxiliary insulating layer 82, can use the formation method of the insulating barrier of dense shape.Here, auxiliary insulating layer 82 is in the conductive pattern 72 and auxiliary insulating layer 81 that cover substrate, and the ground, bottom that also surrounds the side of conductive pole 73 forms.In addition, auxiliary insulating layer 82 contains allyl resin.In addition, here, the surface of conductive pattern 72 and auxiliary insulating layer 81 is substrate surfaces of auxiliary insulating layer 82.
[0087]
Then, shown in Figure 19 (a), adopt ink-jetting process, on insulating barrier 74, form a plurality of pseudo-posts 75.Here, make a plurality of pseudo-posts 75 each top and the top of conductive pole 73, be located substantially on a plurality of pseudo-posts 75 of identical formation flatly.Each of a plurality of pseudo-posts 75, for the conductive layer of hereinafter telling about 77, the electric conducting material ground that contains being adjacent to property excellence constitutes.In the present embodiment, because conductive layer 77 is made of silver, so each of a plurality of pseudo-posts 75 also contains the formation of silver.Therefore, each of a plurality of pseudo-posts 75 and conductive layer 77 can be adjacent to.
[0088]
Then, shown in Figure 19 (b), on insulating barrier 74, in the side of each that surrounds a plurality of pseudo-posts 75, also on insulating barrier 74, surround the insulating barrier of formation laterally 76 of outstanding conductive pole 73.Here, the thickness of insulating barrier 76 is set the top separately that makes a plurality of pseudo-posts 75 and the top of conductive pole 73 for and is spilt from insulating barrier 76.As the method that forms insulating barrier 76, can use the formation method of the insulating barrier of dense shape.In addition, here, the surface of insulating barrier 74, be the surface of auxiliary insulating layer 82, become the substrate surface of insulating barrier 76.
[0089]
After insulating barrier 76 is set in this wise,, a plurality of pseudo-posts 75 be extracted out from insulating barrier 76, can not be extracted out a plurality of pseudo-posts 75 from insulating barrier 76 even apply the external force of Z-direction to a plurality of pseudo-posts 75.In other words, each of a plurality of pseudo-posts 75 all is fixed on the insulating barrier 76.
[0090]
And then insulating barrier 76 adopts the insulating material that contains insulating barrier 74 being adjacent to property excellences to constitute.In the present embodiment, because insulating barrier 74 adopts the structure that contains allyl resin, so insulating barrier 76 adopts the structure that contains allyl resin too.Therefore, insulating barrier 76 and insulating barrier 74 abut against each other.In other words, insulating barrier 76 is fixed on the insulating barrier 74.
[0091]
Then, shown in Figure 19 (c), on insulating barrier 76, adopt of the present invention layer formation method,, also form conductive layer 77 with being connected with the top of conductive pole 73 with when a plurality of pseudo-posts 75 top separately is connected.As the method that forms conductive layer 77, can use the formation method of the insulating barrier of dense shape.Here, the surface of insulating barrier 76 and a plurality of pseudo-posts 75 becomes the substrate surface of conductive layer 77.
[0092]
In the present embodiment, through after such operation, can obtain multi-layer wire substrate 70 from matrix 70A.Here, conductive layer 77 contains silver.As mentioned above, because each of a plurality of pseudo-posts 75 also contains silver, so each of conductive layer 77 and a plurality of pseudo-posts 75 abuts against each other.In other words, conductive layer 77 is fixed on a plurality of pseudo-posts 75.
[0093]
In sum, because each of a plurality of pseudo-posts 75 is fixed on the conductive layer 77, so conductive layer 77 also is fixed on the insulating barrier 76.And, owing to insulating barrier 76 is fixed on the insulating barrier 74, so as its result, conductive layer 77 also is fixed on the insulating barrier 74 of substrate.
[0094]
In the present embodiment, according to the formation method of the insulating barrier of dense shape, form the insulating barrier 74 and the insulating barrier 76 that are made of auxiliary insulating layer 81,82, the formation method according to the conductive layer of dense shape forms conductive layer 77.Like this, final insulating barrier and the conductive layer that obtains, the possibility that produces the cavity is little.
[0095]
In addition, in the present embodiment, from constituting its undermost substrate 71, till the conductive layer 77 that constitutes its superiors, multi-layer wire substrate 70 is by constituting at 5 stacked layers of Z-direction., in fact, between substrate 71 and insulating barrier 74, can there be more layer.In addition, in multi-layer wire substrate 70, can also imbed electronic units such as resistor, capacitor, LSI chip bare chip or LSI assembly.In addition, replace the substrate 71 that constitutes by polyimides, utilize ceramic substrate, glass substrate, epoxy resin base plate, glass epoxy resin substrate or silicon substrate etc. after, the same effect of effect that also can obtain He tell about in the above-described embodiment.
[0096]
(variation 1)
In the above-described embodiment, after round point shape pattern 4 dryings that make on the C11, configuration drop D on C11 once more, thus with the surperficial lyophilyization of C31,, the present invention is not limited to this mode.Specifically, after the drop D drying that makes on the C11, both the surface of substrate 10A can be exposed in the oxygen plasma, thereby with the surperficial lyophilyization of C31; Also can be with the surface of the wavelength illumination substrate 10A in ultraviolet territory.Thereby surperficial lyophilyization with C31.
[0097]
(variation 2)
In the above-described embodiment, in functional liquid, comprise the nano particle of silver for the conductive layer that forms dense shape., can replace the nano particle of silver, use the nano particle of other metal.,, for example both can utilize some in gold, platinum, copper, palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, chromium, titanium, tantalum, tungsten, the indium here, can also utilize the alloy of certain plural combination as other metal.But, if silver owing to can reduce, so be easy to handle, on this point, when utilizing droplet ejection apparatus, preferably utilizes the functional liquid of the nano particle that contains silver in lower temperature.
[0098]
In addition, functional liquid also can replace the nano particle of silver, comprises organo-metallic compound.Here, described organo-metallic compound is the sort of compound that can utilize the heating and decomposition precipitating metal.In this compound.One chloroethene phosphine gold (I) (chlorotriethylphosphine gold (I)) is arranged, one chloromethane phosphine gold (I) (chlorotrimethylphosphine gold (I)), monochloro-benzene phosphine gold (I) (chlorotriphenylphosphine gold (I)), silver (I) 2,4-pentanedione complex (silver (I) 2,4-pentanedionato complexes), trimethyl-phosphine (hexafluoro closes the acetylacetone,2,4-pentanedione dentate) silver (I) complex (trimethylphosphine (hexafluoroacetylacetonato) silver (I) complexes), copper (I) hexafluoro pentanedione cyclo-octadiene complex (copper (I) hexafluoropentane dionato cyclooctadiene complexes) etc.
[0099]
Like this, the form of the metal that is comprised by functional liquid both can be to be the form of the particle of representative with the nano particle, also can be the form of the such compound of organo-metallic compound.
[0100]
And then substituted metal, functional liquid can also be to comprise polyaniline, polythiophene, poly-(two) styrene support, poly-(3,4 second dioxies support thiophene) (PEDOT) to wait the capacitive material of electroconductive polymer.
[0101]
(variation 3)
After adopting above-mentioned execution mode, on the substrate 10A that drop is configured to be made of polyimides., also can replace this substrate 10A, utilize ceramic substrate, glass substrate, epoxy resin base plate, glass epoxy resin substrate or silicon substrate etc. after, the same effect of effect that also can obtain He tell about in the above-described embodiment.In addition, dispose the substrate surface of drop, be not limited to the surface of substrate.It also can be the surface of the conductive layer of the surface of insulating barrier of general planar or general planar.
[0102]
(variation 4)
In the above-described embodiment, the quantity of the block 1 that the size of block 1, block group 1G comprise and drop D hit diameter, are not limited to the value of present embodiment.Specifically, can set in the diameter at least one hit of the quantity of the size of block 1, block 1 that block group 1G comprises and drop D, so that the round point shape pattern 4 that round point shape pattern 4 on the C11 is arbitrarily all got along well on the adjacent C11 connects.
[0103]
(variation 5)
After adopting above-mentioned execution mode, the drop D that disposes on the C31 hit diameter, at the diameter of hitting of the drop D that hits diameter and on C33, dispose of the drop D that disposes on the C13, all identical.But also can replace this structure, what make them hits the diameter difference, so that obtain more uniform conductive layer 8 of thickness.In addition, make drop D hit the diameter difference when, also can change the volume of the drop D of ejection.
[0104]
(variation 6)
Before C11, C31, C13, C33 configuration drop D, surfaction is implemented on the surface of substrate 10A handled, so that the degree of scolding fluidity of substrate surface is risen.Like this, the shape at the edge of dense shape pattern 7 is more sharp-pointed.In addition,, form the technology of fluoroalkyl silanes (FIS) film on the surface of substrate 10A, be widely known by the people as the processing of scolding fluidity that improves the surface.In addition, contain the particle methods such as atmospheric pressure of the processing gas of fluorine, the surface is exposed to handles in the gas, also can improve the fluidity of scolding on surface according to use.
[0105]
(variation 7)
In the above-described embodiment, with dense shape pattern 7 activates, obtain conductive layer 6 as purpose.But, in other embodiments, also can replace dense shape pattern 7 activates according to the material that constitutes dense shape pattern 7, make dense shape pattern 7 dryings.
Claims (14)
1. layer formation method comprises: the 1st operation, and this operation disposes the 1st drop, so that form 2 isolated mutually round point shape patterns on described substrate surface on each of 2 positions of substrate surface;
The 2nd operation, this operation is fixed on the described substrate surface described 2 round point shape patterns by solvent or the dispersant of removing in the drop;
The 3rd operation, this operation make described substrate surface between described 2 round point shape patterns for the 2nd drop lyophilyization at least;
The 4th operation, this operation are after described the 3rd operation, and the described substrate surface between described 2 round point shape patterns disposes described the 2nd drop that connects described 2 round point shape patterns.
2. layer formation method as claimed in claim 1 is characterized in that:
Described the 3rd operation is included in the operation that disposes the 3rd drop on each of described 2 round point shape patterns of being fixed respectively.
3. layer formation method as claimed in claim 1 is characterized in that:
Described the 3rd operation comprises to the operation of described substrate surface irradiation ultraviolet radiation or with described substrate surface and is exposed to operation in the plasma.
4. as each described layer formation method of claim 1～3, it is characterized in that:
After also being included in described the 4th operation, make the activate of described 2 round point shape patterns or the 5th dry operation of connection.
5. layer formation method as claimed in claim 2 is characterized in that:
In average one volume of described the 2nd drop and average one volume of described the 3rd drop at least one is different with average one volume of described the 1st drop.
6. as each described layer formation method of claim 1～3, it is characterized in that:
Average one volume of described the 2nd drop, different with average one volume of described the 1st drop.
7. layer formation method comprises:
The 1st operation, this operation disposes the 1st drop on each of a plurality of positions of substrate surface, so that can form with the 1st direction on described substrate surface and be different from a plurality of round point shape patterns that the array-like of the 2nd direction decision of described the 1st direction is arranged;
The 2nd operation, this operation is fixed on the described substrate surface described a plurality of round point shape pattern by solvent or the dispersant of removing in the drop;
The 3rd operation, this operation is with described substrate surface lyophilyization;
The 4th operation after described the 2nd operation, between each of described a plurality of round point shape patterns that described the 1st direction is arranged, disposes the 2nd drop respectively, and described a plurality of round point shape patterns are connected on described the 1st direction;
The 5th operation, this operation between each of described a plurality of round point shape patterns that described the 2nd direction is arranged, dispose the 3rd drop respectively after described the 4th operation, described a plurality of round point shape patterns are connected on described the 2nd direction;
The 6th operation, this operation between each of described a plurality of round point shape patterns that the compound direction of described the 1st direction and described the 2nd direction is arranged, dispose the 4th drop respectively after described the 5th operation.
8. layer formation method as claimed in claim 7 is characterized in that:
Described the 3rd operation comprises respectively the operation of configuration the 5th drop on each of described a plurality of round point shape patterns.
9. layer formation method as claimed in claim 7 is characterized in that:
Described the 3rd operation comprises to the operation of described substrate surface irradiation ultraviolet radiation or with described substrate surface and is exposed to operation in the plasma.
10. as each described layer formation method of claim 7～9, it is characterized in that:
Also be included in after described the 6th operation, make activate of described a plurality of round point shape pattern or the 7th dry operation.
11., it is characterized in that as each described layer formation method of claim 7～9:
In average one volume of average one volume of described the 2nd drop, described the 3rd drop and average one volume of described the 4th drop at least one is different with average one volume of described the 1st drop.
12. layer formation method as claimed in claim 8 is characterized in that:
In average one volume of average one volume of average one volume of described the 2nd drop, described the 3rd drop, described the 4th drop and average one volume of described the 5th drop at least one is different with average one volume of described the 1st drop.
13. the manufacture method of an active-matrix substrate comprises: the 1st operation, this operation disposes the 1st drop, so that form 2 isolated mutually round point shape patterns on described substrate surface on each of 2 positions of substrate surface;
The 2nd operation, this operation is fixed on the described substrate surface described 2 round point shape patterns by solvent or the dispersant of removing in the drop;
The 3rd operation, this operation make described substrate surface between described 2 round point shape patterns for the 2nd drop lyophilyization at least;
The 4th operation, this operation are after described the 3rd operation, and the described substrate surface between described 2 round point shape patterns disposes described the 2nd drop that connects described 2 round point shape patterns.
14. the manufacture method of a multi-layer wire substrate comprises: the 1st operation, this operation disposes the 1st drop, so that form 2 isolated mutually round point shape patterns on described substrate surface on each of 2 positions of substrate surface;
The 2nd operation, this operation is fixed on the described substrate surface described 2 round point shape patterns by solvent or the dispersant of removing in the drop;
The 3rd operation, this operation make described substrate surface between described 2 round point shape patterns for the 2nd drop lyophilyization at least;
The 4th operation, this operation are after described the 3rd operation, and the described substrate surface between described 2 round point shape patterns disposes described the 2nd drop that connects described 2 round point shape patterns.
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| JP2005245359 | 2005-08-26 | ||
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| JP2006207550 | 2006-07-31 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110385926A (en) * | 2018-04-18 | 2019-10-29 | 松下知识产权经营株式会社 | Printing process, printing equipment, EL and solar battery manufacturing method |
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| CN1531389A (en) * | 2003-03-11 | 2004-09-22 | ������������ʽ���� | Image forming method and device, manufacture of device, conductive film layout, photoelectric device and electronic machine |
| CN1530227A (en) * | 2003-03-13 | 2004-09-22 | ������������ʽ���� | Manufacturing method for electrooptics face-plate and electronic equipment, electrooptics face-plate, electrooptics device and electronic equipment |
| CN1536949A (en) * | 2003-03-27 | 2004-10-13 | ������������ʽ���� | Image forming method, image forming device and its mfg. method |
| WO2004096451A1 (en) * | 2003-04-25 | 2004-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern and droplet discharging device |
| CN1573368A (en) * | 2003-06-02 | 2005-02-02 | 精工爱普生株式会社 | Method of manufacturing color filter substrate, method of manufacturing electroluminescent substrate, electro-optical device |
| JP2005034837A (en) * | 2002-04-16 | 2005-02-10 | Seiko Epson Corp | Pattern forming method, pattern forming apparatus, conductive membrane wiring, production method of device, optoelectronic device, and electronic equipment |
| CN1589412A (en) * | 2001-12-06 | 2005-03-02 | 大日本印刷株式会社 | Method for manufacturing pattern-forming body and pattern manufacturing apparatus |
| CN1612012A (en) * | 2003-10-29 | 2005-05-04 | 精工爱普生株式会社 | Film forming method, film forming machine, device manufacturing method, apparatus and electronic equipment |
-
2006
- 2006-08-28 CN CNB200610126156XA patent/CN100461335C/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1589412A (en) * | 2001-12-06 | 2005-03-02 | 大日本印刷株式会社 | Method for manufacturing pattern-forming body and pattern manufacturing apparatus |
| JP2005034837A (en) * | 2002-04-16 | 2005-02-10 | Seiko Epson Corp | Pattern forming method, pattern forming apparatus, conductive membrane wiring, production method of device, optoelectronic device, and electronic equipment |
| CN1531389A (en) * | 2003-03-11 | 2004-09-22 | ������������ʽ���� | Image forming method and device, manufacture of device, conductive film layout, photoelectric device and electronic machine |
| CN1530227A (en) * | 2003-03-13 | 2004-09-22 | ������������ʽ���� | Manufacturing method for electrooptics face-plate and electronic equipment, electrooptics face-plate, electrooptics device and electronic equipment |
| CN1536949A (en) * | 2003-03-27 | 2004-10-13 | ������������ʽ���� | Image forming method, image forming device and its mfg. method |
| WO2004096451A1 (en) * | 2003-04-25 | 2004-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern and droplet discharging device |
| CN1573368A (en) * | 2003-06-02 | 2005-02-02 | 精工爱普生株式会社 | Method of manufacturing color filter substrate, method of manufacturing electroluminescent substrate, electro-optical device |
| CN1612012A (en) * | 2003-10-29 | 2005-05-04 | 精工爱普生株式会社 | Film forming method, film forming machine, device manufacturing method, apparatus and electronic equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110385926A (en) * | 2018-04-18 | 2019-10-29 | 松下知识产权经营株式会社 | Printing process, printing equipment, EL and solar battery manufacturing method |
| CN110385926B (en) * | 2018-04-18 | 2021-07-16 | 松下知识产权经营株式会社 | Printing method, printing apparatus, EL, and method for manufacturing solar cell |
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| CN1921067A (en) | 2007-02-28 |
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