CN100452202C - Phase change optical disk - Google Patents
Phase change optical disk Download PDFInfo
- Publication number
- CN100452202C CN100452202C CNB2005100920103A CN200510092010A CN100452202C CN 100452202 C CN100452202 C CN 100452202C CN B2005100920103 A CNB2005100920103 A CN B2005100920103A CN 200510092010 A CN200510092010 A CN 200510092010A CN 100452202 C CN100452202 C CN 100452202C
- Authority
- CN
- China
- Prior art keywords
- phase change
- optical disk
- dielectric layer
- change optical
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
An optical disc of phase variation is prepared as setting the first dielectric layer in optical thickness of 86nm-46nm on base plate and the first recording layer on the first dielectric layer, setting the first reflection layer on the first recording layer and the second base plate on the first reflection layer.
Description
Technical field
The present invention relates to a kind of media for storing optical information, particularly a kind of phase change optical disk.
Background technology
Past mainly contains two wholly when development repeatable read writing optical disk, one be magneto-optical disc (Magneto-Optical Disc, MO); Another then is phase change optical disk (Phase-ChangeOptical Disc).Along with the evolution of technology and the variation in market, be to preponderate at present with phase-change type recording medium, comprise rewritable type discs (CD-RW), erasable formula Video CD (DVD-RW, DVD+RW) and dynamic random memory Video CD (DVD-RAM) or the like.
Phase change optical disk adopts the laser radiation disc, by the energy of laser beam, the recording layer material of phase change optical disk is changed between crystallization phase (crystalline) and amorphous phase (amorphous) structure.
At present, the ubiquitous problem of phase change optical disk promptly is that phase change optical disk damages easily, and can't continue to use through after repeatedly repeating to write the process with erase data.
Yet, good and bad the closing of decision media for storing optical information quality lain in shake deviation (Jitter), reflectivity (Reflectivity), and three factors of modulation ratio (Modulation rate), certainly, the factor that influences phase change optical disk is no exception, in the specifications for phase change optical disk and be the scope formulated of the shake deviation of a Video CD (DVD+RW) less than 8.0%, reflectivity should be between 18% to 30%, modulation ratio then needs greater than 0.55.
See also Fig. 3, be a kind of phase change optical disk 3, having one first substrate 31, is located at dielectric build-up 32, on first substrate 31 and is located at recording layer 33, on the dielectric build-up 32 and is located at a reflection horizon 34 on the recording layer 33 and second substrate 35 of being located on the reflection horizon 34.
So, the inventor is by defining the dielectric build-up optical thickness of phase change optical disk, make the scope that the measurement of phase change optical disk can book up to specification be formulated, compare numerical value with the preferred modulation that obtains preferable phase change optical disk, when making the crystallization of phase change optical disk and the reflectivity ratio difference when noncrystalline bigger, thus, make that phase change optical disk can repeat to write to erase repeatedly, and have preferable production quality.
Summary of the invention
Because above-mentioned problem the objective of the invention is to overcome the deficiencies in the prior art and defective, a kind of phase change optical disk is proposed, it can repeat to write to erase repeatedly.
For reaching above-mentioned purpose, the invention provides a kind of phase change optical disk, comprise one first substrate; One dielectric build-up has one first dielectric layer, one second dielectric layer in regular turn, and one the 3rd dielectric layer, and the refractive index of the refractive index of this first dielectric layer and the 3rd dielectric layer is greater than the refractive index of this second dielectric layer; This dielectric build-up, it is located on first substrate, and the optical thickness of this dielectric build-up is between between the 86nm to 460nm; One first recording layer, it is located on this dielectric build-up; One first reflection horizon, it is located on this first recording layer; And one second substrate, it is located on this first reflection horizon.
From the above, comply with because of phase change optical disk of the present invention, the formulation of the optical thickness by dielectric build-up, make in the scope that the measurement of phase change optical disk all can book up to specification formulates, and has the numerical value of preferred modulation ratio, and then increase phase change optical disk and repeated to read the number of times that writes, this shows that phase change optical disk of the present invention has good production quality really.
Description of drawings
Fig. 1 is the synoptic diagram of the phase change optical disk of first embodiment of the invention;
Fig. 2 is the synoptic diagram of the phase change optical disk of second embodiment of the invention;
Fig. 3 is the synoptic diagram of existing phase change optical disk;
Table 1 is measured employed condition and method for the present invention carries out the optical thickness scope;
Table 2 is an experimental data, shows the phase change optical disk with different optical thickness;
Table 3 is an experimental result, the measurement of each phase change optical disk of indicator gauge 2.
Symbol description among the figure
1 phase change optical disk
11 first substrates
12 first dielectric build-ups
121 first dielectric layers
122 second dielectric layers
123 the 3rd dielectric layers
13 first recording layers
14 first reflection horizon
15 second substrates
16 the 4th dielectric layers
2 phase change optical disks
21 first substrates
22 first dielectric build-ups
23 first recording layers
24 first reflection horizon
25 bonding coats
26 second dielectric build-ups
27 second recording layers
28 second reflection horizon
29 second substrates
3 phase change optical disks
31 first substrates
32 dielectric build-ups
33 recording layers
34 reflection horizon
35 second substrates
Embodiment
Hereinafter with reference to relevant drawings, the phase change optical disk (Phase-Change Optical Disk) according to preferred embodiment of the present invention is described.
See also shown in Figure 1, phase change optical disk 1 for the present invention's first preferred embodiment, in the present embodiment, phase change optical disk 1 is the Video CD (DVD+RW) of a single-surface single-layer (single side single layer), it includes one first substrate 11, one first dielectric build-up 12, one first recording layer 13, one first reflection horizon 14, and one second substrate 15.
It is made that the material of first substrate 11 can be polycarbonate (polycarbonate), and have a wobble groove (wobbling groove), and gash depth is about 0.74 μ m.In addition, first substrate 11 has birefraction (birefringence) less than 60nm, and the refractive index of first substrate 11 is between 1.50 to 1.65, and the thickness of first substrate 11 is between between the 0.59mm to 0.61mm.
It is located at first dielectric build-up 12 on first substrate 11, and the optical thickness of first dielectric build-up 12 is between between the 86nm to 460nm.First dielectric build-up 12 can be the dielectric build-up that only has a dielectric layer, and in the present embodiment, first dielectric build-up 12 has one first dielectric layer 121, one second dielectric layer of being located in regular turn on first substrate 11 122, and one the 3rd dielectric layer 123, in the present embodiment, first dielectric layer 121 and the 3rd dielectric layer 123 are by zinc sulphide-silicon dioxide (ZnS-SiO
2) material makes, so the refractive index of first dielectric layer 121 and the 3rd dielectric layer 123 is about 2.1, the second dielectric layers 122 by silicon dioxide (SiO
2) material make, so the refractive index of second dielectric layer 122 is about 1.5.Certainly, the present invention does not limit the material of each dielectric layer in first dielectric build-up 12, but, must follow the refractive index that first dielectric layer 121 in first dielectric build-up 12 and the 3rd dielectric layer 123 have must be greater than the rule that is provided with of the refractive index of second dielectric layer 122.In addition, first dielectric build-up 12 also can have a plurality of dielectric layers, similarly, the refractive index of each the even number dielectric layer refractive index less than each odd number dielectric layer must be got final product.
In the present embodiment, phase change optical disk 1 more comprises one the 4th dielectric layer 16, and it is located between first recording layer 13 and first reflection horizon 14, and the 4th dielectric layer 16 is by zinc sulphide-silicon dioxide (ZnS-SiO
2) material makes, so the refractive index of the 4th dielectric layer 16 is about 2.1.
Following according to the experiment condition in the table 1, place wavelength under 650nm to 665nm phase change optical disk 1, use multiple-pulse recording strategy (multipulse writing strategy) to carry out burning, then, please refer to the experimental data of table 2 and table 3, define the experiment of phase change optical disk 1 each layer optical thickness of the present invention:
As shown in table 2, in the experimental group 1, first dielectric build-up, first recording layer, and the optical thickness in the 4th reflection horizon is respectively 158.5nm, 34.5nm, and 77.7nm, in the experimental group 2, first dielectric build-up, first recording layer, and the optical thickness of the 4th dielectric layer is respectively 403.5nm, 50.6nm, and 71.4nm.Measurement in the corresponding tables 3, the shake deviation of experimental group 1, modulation ratio, and reflectivity is respectively 7.1%, 0.69, and 26.0%, the shake deviation of experimental group 2, modulation ratio, and reflectivity is respectively 7.0%, 0.67, and 24.5%, in the scope of being formulated in the book all up to specification, and control group 1 is slightly adjusted the optical thickness of first recording layer and first dielectric layer to control group 4, as shown in table 3, control group 1 to shake deviation, modulation ratio or the reflectivity of control group 4 exceeds outside the scope that specifications formulate.Know by inference thus, the optical thickness of first recording layer is between between the 20nm to 60nm, and the optical thickness of the 4th dielectric layer is between between the 21nm to 95nm.In the present embodiment, the material of first recording layer 13 is silver/indium/antimony/tellurium/germanium (Ag/In/Sb/Te/Ge) alloy, and, first recording layer 13 has the germanium (Ge) of about atomic percent one to atomic percent five, its refractive index is about 2.3, the thickness of first recording layer 13 is between between the 9nm to 26nm the time, and satisfying its optical thickness must be between the demand of 20nm to 60nm.The 4th dielectric layer 16 is by zinc sulphide-silicon dioxide (ZnS-SiO
2) material makes, the refractive index of the 4th dielectric layer 16 is about 2.1, when the thickness of the 4th dielectric layer between between the 10nm to 45nm the time, satisfying its optical thickness must be between the demand of 21nm to 95nm.
Then, first dielectric layer of experimental group 3, second dielectric layer in the table 2, and the optical thickness of the 3rd dielectric layer is respectively 126.0nm, 135.0nm, and 199.4nm, the total optical thickness that makes the dielectric build-up of winning is 460.4nm.The measurement of experimental group 3 shows that shake deviation, modulation ratio, reflectivity are respectively 7.5%, 0.67, and 24.0%, and its repetitive read-write ability is 7500 times, in the scope that book up to specification is formulated.
Please comparative control group 5, when the optical thickness of the 3rd dielectric layer increases to 203.7nm gradually, at this moment, the optical thickness of first dielectric build-up is 464.7nm, table 3 shows that the measurement of control group 5 exceeds outside the scope that specifications formulate as a result, control group 6 is fixed as 226.8nm with the optical thickness of the 3rd dielectric layer, and reduces the thickness of second dielectric layer gradually.By finding in the experimental data, when second medium thickness is 109.0nm, the optical thickness of first dielectric build-up is 461.8nm, the measurement of control group 6 exceeds the scope that specifications are formulated, but, if continue to reduce the thickness of second dielectric layer, in the measurement of control group 6 scope that then book up to specification is formulated, this shows, first dielectric layer, second dielectric layer, and the optical thickness of the 3rd each layer of dielectric layer directly do not influence measurement, and the main cause that really influences measurement is the optical thickness of first dielectric build-up.In like manner, ask comparative experiments group 5 and control group 9, control group 10, and experimental group 6 and control group 11, control group 12, so via experimental results reduction, the optical thickness scope that can push away the dielectric build-up of winning is between between the 86nm to 460nm.
See also shown in Figure 2, phase change optical disk 2 for the present invention's second preferred embodiment, it is the Video CD (DVD+RW) of a single-surface double-layer (single side dual layer), include one first substrate 21 and one second substrate 29, and by folded in regular turn one first dielectric build-up 22 that is provided with of first substrate, 21 to second substrates, 29 directions, one first recording layer 23, one first reflection horizon 24, one bonding coat 25, one second dielectric build-up 26, one second recording layer 27, and one second reflection horizon 28, because, first substrate 21, first dielectric build-up 22, first recording layer 23, first reflection horizon 24, and the structure of second substrate 29 is not given unnecessary details in this appearance with before to take off embodiment identical.
Because the optical thickness of first dielectric build-up 22 between between the 86nm to 460nm, makes phase change optical disk of the present invention to formulate shake deviation, reflectivity by book up to specification, and the scope of modulation ratio, makes phase change optical disk 2 have good quality.
From the above, comply with because of phase change optical disk of the present invention, the formulation of the optical thickness by dielectric build-up, make in the scope that the measurement of phase change optical disk all can book up to specification formulates, and has the numerical value of preferred modulation ratio, and then increase phase change optical disk and repeated to read the number of times that writes, this shows that phase change optical disk of the present invention has good production quality really.
The above only is an illustrative, but not is restricted.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the scope of claims its equivalent modifications of carrying out or change.
Claims (14)
1. a phase change optical disk is characterized in that, comprises:
One first substrate;
One dielectric build-up has one first dielectric layer, one second dielectric layer in regular turn, and one the 3rd dielectric layer, and the refractive index of the refractive index of this first dielectric layer and the 3rd dielectric layer is greater than the refractive index of this second dielectric layer;
This dielectric build-up, it is located on first substrate, and the optical thickness of this dielectric build-up is between between the 86nm to 460nm;
One first recording layer, it is located on this first dielectric build-up;
One first reflection horizon, it is located on this first recording layer; And
One second substrate, it is located on this first reflection horizon.
2. phase change optical disk as claimed in claim 1, wherein, this dielectric build-up the 3rd dielectric layer that continues more has additional at least one dielectric layer, and the refractive index of the even level in a plurality of dielectric layers that this first dielectric layer, this second dielectric layer, the 3rd dielectric layer and the dielectric layer set up are formed is less than the refractive index of odd-level.
3. phase change optical disk as claimed in claim 1 wherein, more comprises:
One the 4th dielectric layer, it is located between this first recording layer and first reflection horizon.
4. phase change optical disk as claimed in claim 1, wherein, the optical thickness of this first recording layer is between between the 20nm to 60nm.
5. phase change optical disk as claimed in claim 3, wherein, the optical thickness of the 4th dielectric layer between between the 21nm to 95nm or the thickness of the 4th dielectric layer between between the 10nm to 45nm.
6. phase change optical disk as claimed in claim 1, wherein, the material of this first recording layer is silver/indium/antimony/tellurium/germanium alloy.
7. phase change optical disk as claimed in claim 1, wherein, this first recording layer has the germanium of atomic percent one to atomic percent five.
8. phase change optical disk as claimed in claim 3, wherein, the material of the 4th dielectric layer is zinc sulphide-silicon dioxide.
9. phase change optical disk as claimed in claim 1, wherein, the thickness of this first recording layer is between between the 9nm to 26nm.
10. phase change optical disk as claimed in claim 1, wherein, this first reflection horizon be selected from aluminium alloy, titanium alloy, aldary and silver alloy at least one of them.
11. phase change optical disk as claimed in claim 1, wherein, the thickness in this first reflection horizon is between between the 60nm to 200nm.
12. phase change optical disk as claimed in claim 1, wherein, the refractive index of this first substrate is between 1.50 to 1.65.
13. phase change optical disk as claimed in claim 1, wherein, the thickness of this first substrate is between between the 0.59mm to 0.61mm.
14. phase change optical disk as claimed in claim 1 wherein, more comprises:
One second recording layer, it is located between this first reflection horizon and this second substrate; And
One second reflection horizon, it is located between this second recording layer and this second substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100920103A CN100452202C (en) | 2005-08-16 | 2005-08-16 | Phase change optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100920103A CN100452202C (en) | 2005-08-16 | 2005-08-16 | Phase change optical disk |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1917058A CN1917058A (en) | 2007-02-21 |
| CN100452202C true CN100452202C (en) | 2009-01-14 |
Family
ID=37738033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100920103A Expired - Fee Related CN100452202C (en) | 2005-08-16 | 2005-08-16 | Phase change optical disk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100452202C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1298176A (en) * | 1999-11-24 | 2001-06-06 | 三星电子株式会社 | Phase conversion optical disc |
| CN1461475A (en) * | 2001-04-12 | 2003-12-10 | 皇家菲利浦电子有限公司 | Rewritable optical data storage medium and use of such medium |
| US6827999B2 (en) * | 2001-02-09 | 2004-12-07 | Ricoh Company, Ltd. | Optical information recording medium |
| JP2005216486A (en) * | 2005-04-18 | 2005-08-11 | Toshiba Corp | Phase-change optical recording medium |
-
2005
- 2005-08-16 CN CNB2005100920103A patent/CN100452202C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1298176A (en) * | 1999-11-24 | 2001-06-06 | 三星电子株式会社 | Phase conversion optical disc |
| US6827999B2 (en) * | 2001-02-09 | 2004-12-07 | Ricoh Company, Ltd. | Optical information recording medium |
| CN1461475A (en) * | 2001-04-12 | 2003-12-10 | 皇家菲利浦电子有限公司 | Rewritable optical data storage medium and use of such medium |
| JP2005216486A (en) * | 2005-04-18 | 2005-08-11 | Toshiba Corp | Phase-change optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1917058A (en) | 2007-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1773601B1 (en) | Optical recording medium | |
| CN1551161A (en) | Optical information recording medium | |
| JP2005025900A (en) | Optical recording medium, optical recording and reproducing device, optical recording device, optical reproducing device, and data recording and reproducing method, data recording method, and data reproducing method on optical recording medium | |
| CN104123953A (en) | Optical recording medium | |
| JP4025139B2 (en) | Phase change recording element for write-once applications | |
| CN101512647B (en) | Multi-layered phase-change optical recording medium | |
| EP1987515A1 (en) | Method for determining optimum laser beam power and optical recording medium | |
| CN100540325C (en) | Optical record medium | |
| CN100452202C (en) | Phase change optical disk | |
| WO2005101394A1 (en) | 2-layer type optical recording medium and recording/reproducing method therefor, and optical recording/reproducing device | |
| US20070087155A1 (en) | Optical information recording medium | |
| JP2006035618A (en) | Optical information recording medium and its manufacturing method | |
| CN100411033C (en) | Blue light light disk | |
| JP4397838B2 (en) | Multilayer phase change optical recording medium | |
| CN100378836C (en) | Phase change type optical disc | |
| JP4521282B2 (en) | Rewritable optical record carrier | |
| CN101604540B (en) | Optical information recording medium | |
| JP4322719B2 (en) | Optical information recording medium, method for producing the same, and sputtering target | |
| TWI245286B (en) | Phase change optical disk | |
| CN101091215B (en) | Power determining method, recording method, and optical disk apparatus | |
| CN100429711C (en) | Optical information storage medium | |
| JP2002269825A (en) | Optical recording medium | |
| CN101248490A (en) | Optical recording medium | |
| CN102804269B (en) | Optical recording media | |
| JP2002245665A (en) | Information recording medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 |