CN100451172C - Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof - Google Patents
Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof Download PDFInfo
- Publication number
- CN100451172C CN100451172C CNB2006101127912A CN200610112791A CN100451172C CN 100451172 C CN100451172 C CN 100451172C CN B2006101127912 A CNB2006101127912 A CN B2006101127912A CN 200610112791 A CN200610112791 A CN 200610112791A CN 100451172 C CN100451172 C CN 100451172C
- Authority
- CN
- China
- Prior art keywords
- film
- room
- nitrate
- oxide based
- magnetic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000010409 thin film Substances 0.000 title claims description 18
- 238000002360 preparation method Methods 0.000 title claims description 16
- 230000005307 ferromagnetism Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910001428 transition metal ion Inorganic materials 0.000 claims abstract description 9
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 61
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 57
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 38
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 38
- 230000005294 ferromagnetic effect Effects 0.000 claims description 23
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 claims description 22
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910002651 NO3 Inorganic materials 0.000 claims description 8
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 238000005303 weighing Methods 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 7
- 229910006703 Li—Ni—Mn—O Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 229910017135 Fe—O Inorganic materials 0.000 claims description 3
- 229910013553 LiNO Inorganic materials 0.000 claims description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 3
- 229910006463 Li—Ni—Co—O Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 150000001768 cations Chemical class 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 1
- AMDUMQZTBRMNMG-UHFFFAOYSA-N nickel nitric acid Chemical compound [Ni].O[N+]([O-])=O AMDUMQZTBRMNMG-UHFFFAOYSA-N 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
- 235000015165 citric acid Nutrition 0.000 description 11
- 230000001105 regulatory effect Effects 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 nickelous nitrates Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Compounds Of Iron (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses an oxide base rare magnetic conductive film and preparing method with indoor temperature magnet in the material scientific domain, which is characterized by the following: displaying the component as LixNi1-x-yMyO (o<=x<=0.1; o<y <=0.1); adopting gel-sol method to prepare Li and transition metal ion M NiO film on the Si substrate; disposing in the rapid heat disposal furnace; obtaining the indoor-temperature magnetic film; adjusting the magnet and conductive rate through changing doping transition metal kind and Li ion content.
Description
Technical field
The invention belongs to material science, particularly a kind of oxide based diluted magnetic semiconductor thin film and preparation method thereof with room-temperature ferromagnetic.
Background technology
Dilute magnetic semiconductor (Diluted Magnetic Semiconductors, DMS), owing to utilize the electric charge attribute and the spin attribute of electronics simultaneously, have excellent magnetic, magneto-optic, magnetic electricity performance, make it wide application prospect be arranged, become research focus new in the material field in fields such as magnetic inductor, high-density storage, optoisolator, semiconductor lasers.And can develop in view of the above based on the electric charge of electronics and the high performance spin electric device of spin properties work simultaneously, it has, and speed is fast, volume is little, low power consumption and other advantages, make information storage and information processing just can carry out simultaneously, thereby device structure is simplified greatly, function is enhanced, at electronic information field, will play important effect.Utilize the property of dilute magnetic semiconductor, designed and successfully prepared spin field effect pipe (spin-FETs), spin light emitting diode devices such as (spin-LEDs).
The more magnetic semiconductor material of early stage research is as the chalkogenide of europium (Eu), because Curie temperature does not have actual using value well below room temperature.At present, existing in the world a plurality of research groups have carried out the research of oxide-base DMS film, and major part concentrates on ZnO, TiO
2, SnO
2On matrix, comprise the ZnO of doped with Mn, Co, Ni, V, and Co-SnO
2, Cr-ZnTe, Fe-In
2O
3, Mn-Cu
2System such as O, Mn-GaN.People such as Dietl utilized the Zener model to calculate the Curie temperature of the adulterated semiconductor material of a series of p types theoretically in 2000, its calculation result shows, when magnetic atom or ionic content and hole concentration satisfied certain condition, GaN and zno-based dilute magnetic semiconductor material had the ferromegnetism of room temperature.In calendar year 2001, at first find that have room-temperature ferromagnetic is the adulterated TiO of Co
2The system film.The saturation magnetic moment of this film when 300K can reach 0.32 μ
B/ Co, Curie temperature is higher than 400K.Subsequently, more the multicurie temperature dilute magnetic semiconductor system that is higher than room temperature is in the news, and comprises the ZnO of doped with Mn, Co, Ni, V, and Co-SnO
2, Cr-ZnTe, Fe-In
2O
3, Mn-Cu
2System such as O, Mn-GaN.Wherein the research of ZnO dilute magnetic semiconductor is more extensive, but the technology circulation ratio is relatively poor, and is wayward, and the report result difference is bigger.Show that hole its ferromegnetism of doped p type ZnO semi-conductor can be regulated and control although calculate in theory, in fact, be difficult to preparation stable p-type ZnO semi-conductor.Therefore seek, develop new DMS material system, significance will be arranged.
We have found first that in 2005 the adulterated NiO nano-powder of Fe at room temperature has ferromegnetism, and still, this conductivity of electrolyte materials is very low, the difficult regulation and control of ferromegnetism.The present invention regulates the concentration of hole carrier in the NiO thin-film material by adding Li, and by adding different transition-metal ions, realizes the regulation and control of the room-temperature ferromagnetic of material.
Summary of the invention
The purpose of this invention is to provide a kind of novel oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic and preparation method thereof that has.It is characterized in that described composition Li with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic
xN
I-x-yM
yO represents, o≤x≤0.1, o＜y≤0.1; Wherein M is transition-metal ion Fe, Mn, Co or Cr.Its x, y are molar weight.
Described preparation method with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic adopts sol-gel method, the method of employing spin coating whirl coating prepares the NiO film of Li and transition-metal ion M on the Si substrate, in rapid heat-treatment furnace, handle then, promptly obtain the room-temperature ferromagnetic thin-film material.Concrete preparation technology is as follows:
1) with nickelous nitrate (Ni (NO
3)
26H
2O), iron nitrate (Fe (NO
3)
39H
2O), manganous nitrate (Mn (NO
3)
2), Xiao Suangu (Co (NO
3)
26H
2O), chromium nitrate (Cr (NO
3)
39H
2O), lithium nitrate (LiNO
3) take by weighing raw material by the stoichiometric ratio of following formula, ethylene glycol monoemethyl ether (CH
3OCH
2CH
2OH) be solvent, citric acid (C
6H
8O
7H
2O) be complexing agent preparation Li-Ni-Fe-O and Li-Ni-Mn-O, the colloidal sol of Li-Ni-Co-O and Li-Ni-Cr-O system.At first with nickelous nitrate, citric acid (cation concn is 1: 1.3 with the mol ratio of citric acid) and different transition group nitrate are dissolved in the ethylene glycol monoemethyl ether, the dissolving back makes colloidal sol by the ethylene glycol monoemethyl ether solution of the molar ratio adding lithium nitrate of lithium ion in the sample component fully.
2) prepare colloidal sol after, at Si/SiO
2Adopt the method for spin coating whirl coating to prepare film on the/Ti/Pt substrate, after the whirl coating, earlier wet film is dried.
3) in rapid heat-treatment furnace, carry out anneal then, anneal under 250-350 ℃ condition is decomposed the organism in the film earlier, repeats this process to needed film thickness (50-200nm), again 550-700 ℃ of annealing down, promptly make NiO base DMS film at last.By changing the kind of adulterated magnesium-yttrium-transition metal, thereby reach best ferromegnetism, and Li ionic content is regulated the room temperature ferromagnetic of film.
The invention has the beneficial effects as follows by using novel broad-band gap body material and changing carrier concentration, obtain a kind of novel transition element doped oxide based diluted magnetic semiconductor material with adjustable room-temperature ferromagnetic.This material preparation method is simple, and film at room temperature has ferromegnetism and very high specific conductivity, and the size of the room-temperature ferromagnetic of film and specific conductivity can pass through to change the kind of adulterated magnesium-yttrium-transition metal, and Li ionic content is regulated.Characteristics such as it is simple that this technology has technology, and repeatability is strong, and product performance are stable.
Description of drawings
The XRD curve of film among Fig. 1 embodiment 1
The M-H curve of film among Fig. 2 embodiment 1
The XRD curve of film among Fig. 3 embodiment 2
The M-H curve of film among Fig. 4 embodiment 2
The XRD curve of film among Fig. 5 embodiment 3
The M-H curve of film among Fig. 6 embodiment 3
The XRD curve of film among Fig. 7 embodiment 4
The M-H curve of film among Fig. 8 embodiment 4
The XRD curve of film among Fig. 9 embodiment 5
The M-H curve of film among Figure 10 embodiment 5
Embodiment
The purpose of this invention is to provide a kind of novel oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic and preparation method thereof that has.It is characterized in that described composition Li with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic
xNi
1-x-yM
yO represents, o≤x≤0.1, o＜y≤0.1; Wherein M is transition-metal ion Fe, Mn, Co or Cr.Its x, y are molar weight.
Described preparation method with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic adopts sol-gel method, the method of employing spin coating whirl coating prepares the NiO film of Li and transition-metal ion M on the Si substrate, in rapid heat-treatment furnace, handle then, promptly obtain the room-temperature ferromagnetic thin-film material.Concrete technology is as follows:
1) with nickelous nitrate (Ni (NO
3)
26H
2O), iron nitrate (Fe (NO
3)
39H
2O), manganous nitrate (Mn (NO
3)
2), Xiao Suangu (Co (NO
3)
26H
2O), chromium nitrate (Cr (NO
3)
39H
2O), lithium nitrate (LiNO
3) take by weighing raw material by the stoichiometric ratio of following formula, ethylene glycol monoemethyl ether (CH
3OCH
2CH
2OH) be solvent, citric acid (C
6H
8O
7H
2O) be complexing agent preparation Li-Ni-Fe-O and Li-Ni-Mn-O, the colloidal sol of Li-Ni-Co-O and Li-Ni-Cr-O system.At first with nickelous nitrate, citric acid (cation concn is 1: 1.3 with the mol ratio of citric acid) and different transition group nitrate are dissolved in the ethylene glycol monoemethyl ether, the dissolving back makes colloidal sol by the ethylene glycol monoemethyl ether solution of the molar ratio adding lithium nitrate of lithium ion in the sample component fully.
2) prepare colloidal sol after, at Si/SiO
2Adopt the method for spin coating whirl coating to prepare film on the/Ti/Pt substrate, after the whirl coating, earlier wet film is dried.
3) in rapid heat-treatment furnace, carry out anneal then, anneal under 250-350 ℃ of gram condition is decomposed the organism in the film earlier, repeats this process to needed film thickness (50-200nm), again 550-700 ℃ of annealing down, promptly make NiO base DMS film at last.
Below be embodiments of the invention:
Embodiment 1: take by weighing an amount of nickelous nitrate, manganous nitrate, citric acid according to the prescription in the table 1, be dissolved in them in the ethylene glycol monoemethyl ether together, the concentration of dissolving back adding 0.4mL is the ethylene glycol monoemethyl ether solution of the lithium nitrate of 0.1mol/L fully, makes the colloidal sol of the Li-Ni-Mn-O system of different Mn content at last.Use above-mentioned colloidal sol, adopt the method for spin coating to get rid of film, earlier wet film is dried, in rapid heat-treatment furnace, under 300 ℃ condition, anneal then, repeat this process, at last 600 ℃ of annealing down up to required thickness, obtain the film of needs, Figure 1 shows that the XRD curve of film; Figure 2 shows that the M-H curve of film.
The prescription of each component among table 1 embodiment 1
Embodiment 2: take by weighing an amount of nickelous nitrate, manganous nitrate, citric acid according to the prescription in the table 2, be dissolved in them in the ethylene glycol monoemethyl ether together, the dissolving back an amount of concentration of adding is the ethylene glycol monoemethyl ether solution of the lithium nitrate of 0.1mol/L fully, makes the colloidal sol of the Li-Ni-Mn-O system of Different L i content at last.Use above-mentioned colloidal sol, adopt the method for spin coating to get rid of film, earlier wet film is dried, in rapid heat-treatment furnace, under 300 ℃ condition, anneal then, repeat this process, 600 ℃ of annealing down, obtain the film that needs at last up to required thickness.Figure 3 shows that the XRD curve of film; Figure 4 shows that the M-H curve of film.
The prescription of each component among table 2 embodiment 2
Embodiment 3: take by weighing 0.564 gram nickelous nitrate, and 0.016 gram iron nitrate, 0.546 gram citric acid is dissolved in them in the ethylene glycol monoemethyl ether together, and adding 1ml concentration after the dissolving fully is the ethylene glycol monoemethyl ether solution of the lithium nitrate of 0.1mol/L, and making proportioning at last is Li
0.01Ni
0.97Fe
0.02The colloidal sol of O.Use above-mentioned colloidal sol, adopt the method for spin coating to get rid of film, earlier wet film is dried, in rapid heat-treatment furnace, under 300 ℃ condition, anneal then, repeat this process, 600 ℃ of annealing down, obtain the film that needs at last up to required thickness.Figure 5 shows that the XRD curve of film; Figure 6 shows that the M-H curve of film.
Embodiment 4: take by weighing 1.140 gram nickelous nitrates, 0.012 the gram Xiao Suangu, 1.092 gram citric acids are dissolved in them in the ethylene glycol monoemethyl ether together, dissolving back adding 0.4mL concentration is the ethylene glycol monoemethyl ether solution of the lithium nitrate of 0.1mol/L fully, and making proportioning at last is Li
0.01Ni
0.98Co
0.01The colloidal sol of O.Use above-mentioned colloidal sol, adopt the method for spin coating to get rid of film, earlier wet film is dried, in rapid heat-treatment furnace, under 300 ℃ condition, anneal then, repeat this process, 600 ℃ of annealing down, obtain the film that needs at last up to required thickness.Figure 7 shows that the XRD curve of film; Figure 8 shows that the M-H curve of film.
Embodiment 5: take by weighing 1.128 gram nickelous nitrates, 0.016 the gram chromium nitrate, 1.092 gram citric acids are dissolved in them in the ethylene glycol monoemethyl ether together, dissolving back adding 0.8mL concentration is the ethylene glycol monoemethyl ether solution of the lithium nitrate of 0.1mol/L fully, and making proportioning at last is Li
0.02Ni
0.97Cr
0.01The colloidal sol of O.Use above-mentioned colloidal sol, adopt the method for spin coating to get rid of film, earlier wet film is dried, in rapid heat-treatment furnace, under 300 ℃ condition, anneal then, repeat this process, 600 ℃ of annealing down, obtain the film that needs at last up to required thickness.Figure 9 shows that the XRD curve of film; Figure 10 shows that the M-H curve of film.
From the foregoing description, pass through to change the kind of adulterated magnesium-yttrium-transition metal as can be seen, thereby reach best ferromegnetism, and Li ionic content is regulated the room temperature ferromagnetic of film.
Claims (3)
1. the oxide based diluted magnetic semiconductor thin film with room-temperature ferromagnetic is characterized in that, described composition Li with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic
xNi
1-x-yM
yO represents, o≤x≤0.1, o＜y≤0.1; Wherein M is a transition-metal ion, and x, y are molar weight.
2. according to the described oxide based diluted magnetic semiconductor thin film of claim 1, it is characterized in that described transition-metal ion M is Fe, Mn, Co or Cr with room-temperature ferromagnetic.
3. the described preparation method of claim 1 with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic, it is characterized in that, described preparation method with oxide based diluted magnetic semiconductor thin film of room-temperature ferromagnetic adopts sol-gel method, the method of employing spin coating whirl coating prepares the NiO film of Li and transition-metal ion M on the Si substrate, in rapid heat-treatment furnace, handle then, promptly obtain the room-temperature ferromagnetic thin-film material, concrete preparation technology is as follows:
1) with nitric acid nickel (NO
3)
26H
2O, iron nitrate Fe (NO
3)
39H
2O, manganous nitrate Mn (NO
3)
2, Xiao Suangu Co (NO
3)
26H
2O, chromium nitrate Cr (NO
3)
39H
2O, lithium nitrate LiNO
3Stoichiometric ratio by following formula takes by weighing raw material, ethylene glycol monoemethyl ether CH
3OCH
2CH
2OH is a solvent, citric acid C
6H
8O
7H
2O is complexing agent preparation Li-Ni-Fe-O and Li-Ni-Mn-O, the colloidal sol of Li-Ni-Co-O and Li-Ni-Cr-O system; It at first is 1: 1.3 ratio in the mol ratio of cation concn and citric acid, with nickelous nitrate, citric acid is dissolved in the ethylene glycol monoemethyl ether with different transition group nitrate, and the dissolving back makes colloidal sol by the ethylene glycol monoemethyl ether solution of the molar ratio adding lithium nitrate of lithium ion in the sample component fully;
2) prepare colloidal sol after, at Si/SiO
2Adopt the method for spin coating whirl coating to prepare film on the/Ti/Pt substrate, after the whirl coating, earlier wet film is dried;
3) in rapid heat-treatment furnace, carry out anneal then, anneal under 250-350 ℃ of gram condition is decomposed the organism in the film earlier, and repeating this process is 50-200nm to needed film thickness, again 550-700 ℃ of annealing down, promptly make NiO base DMS film at last; By changing the kind of adulterated magnesium-yttrium-transition metal, thereby reach best ferromegnetism, and regulate the room temperature ferromagnetic of film by changing Li ionic content.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101127912A CN100451172C (en) | 2006-09-01 | 2006-09-01 | Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101127912A CN100451172C (en) | 2006-09-01 | 2006-09-01 | Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1924095A CN1924095A (en) | 2007-03-07 |
| CN100451172C true CN100451172C (en) | 2009-01-14 |
Family
ID=37816912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101127912A Expired - Fee Related CN100451172C (en) | 2006-09-01 | 2006-09-01 | Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100451172C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305964B (en) * | 2013-06-24 | 2015-08-12 | 清华大学 | NiO base diluted magnetic semiconductor nano fiber and preparation method thereof |
| CN107103992B (en) * | 2017-04-28 | 2019-06-25 | 武汉科技大学 | Ti adulterates CrO2Epitaxial film and preparation method thereof |
| CN107240624B (en) * | 2017-05-08 | 2019-04-16 | 上海大学 | NiO laminated film, quantum dot light emitting device and its preparation and application |
| CN108682842B (en) * | 2018-03-23 | 2021-03-30 | 格林美（无锡）能源材料有限公司 | Y-doped CaMnO3Coated ternary positive electrode material and preparation method thereof |
| CN113600454B (en) * | 2021-08-03 | 2023-04-07 | 广西大学 | Method for preparing lead-free ferroelectric film on wide bandgap semiconductor substrate |
| CN116332623B (en) * | 2023-03-27 | 2024-06-11 | 深圳众诚达应用材料股份有限公司 | NMO oxide semiconductor material, and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1383161A (en) * | 2002-05-31 | 2002-12-04 | 南京大学 | Diluted magnetic ZnO-base semiconductor prepared by sol-gel method |
| KR20030087393A (en) * | 2002-05-09 | 2003-11-14 | 김철성 | Composition of diluted magnetic semiconductor |
-
2006
- 2006-09-01 CN CNB2006101127912A patent/CN100451172C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030087393A (en) * | 2002-05-09 | 2003-11-14 | 김철성 | Composition of diluted magnetic semiconductor |
| CN1383161A (en) * | 2002-05-31 | 2002-12-04 | 南京大学 | Diluted magnetic ZnO-base semiconductor prepared by sol-gel method |
Non-Patent Citations (2)
| Title |
|---|
| 溶胶-凝胶法制备ZnO基稀释磁性半导体薄膜. 修向前，张荣等.高技术通讯，第3期. 2003 |
| 溶胶-凝胶法制备ZnO基稀释磁性半导体薄膜. 修向前，张荣等.高技术通讯，第3期. 2003 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1924095A (en) | 2007-03-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100451172C (en) | Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof | |
| Deka et al. | Synthesis and Ferromagnetic Properties of Lightly Doped Nanocrystalline Zn1-x Co x O | |
| CN100524623C (en) | Preparation of ZnO base thin-magnetic semi-conductor film using electric-magnetic field restricted jigger coupling plasma sputtering sedimentation | |
| CN101892425B (en) | Soft magnetic alloy powder, magnetic powder core and preparation methods thereof | |
| CN100559595C (en) | The BiFeO that is used for ferroelectric memory 3-based sandwich structural membrane and preparation method thereof | |
| CN101913854B (en) | Preparation method of nanometer strontium ferrite magnetic powder | |
| Wang et al. | Improved Thermoelectric Properties of La1− x Sr x CoO3 Nanowires | |
| CN110911150B (en) | Method for improving coercive force of neodymium iron boron sintered permanent magnet | |
| CN1948221A (en) | Method of preparing high temperature ferromagnetism ZnO:(Co,Al) nano-material using sol-gel method | |
| Dung et al. | Defect-mediated room temperature ferromagnetism in lead-free ferroelectric Na 0.5 Bi 0.5 TiO 3 materials | |
| CN105206367A (en) | Sintered neodymium-iron-boron magnet and preparing method thereof | |
| CN101488387A (en) | P type doping CuCrO2 based diluted magnetic semiconductor material and preparation thereof | |
| CN103943863A (en) | Anion doped modified lithium-excess (5:3:2) type ternary lithium ion battery cathode material | |
| CN103074576B (en) | Zno-based diluted semi-conductor thin-film and preparation method thereof | |
| CN103341624A (en) | Method for preparing Cu-Cu2O core-shell ferromagnetic nano-particles | |
| CN103265281B (en) | Cr-doped Bi2Fe4O9 multiferroic ceramic material and preparation method thereof | |
| Gazzali et al. | Low-temperature magnetic properties of vanadium-doped ZnO nanoparticles | |
| CN104876279A (en) | Method for preparing Co-doped BiFeO3 | |
| CN102747398A (en) | Functional material with CuO and In2O3 micro-nano heterogeneous periodic structure and preparation method thereof | |
| Yang et al. | Effects of dopants on magnetic properties of Cu-doped ZnO thin films | |
| Tang et al. | Preparation and enhanced ferromagnetic properties in Co doped BiFeO3 nanoparticles prepared by sol–gel method | |
| CN103715349B (en) | A kind of preparation method of Ni doping ZnO texture thermoelectric material | |
| CN115947387A (en) | B-site five-element high-entropy double perovskite structure oxide electrode material and preparation method thereof | |
| CN100537084C (en) | Process for producing Mn doping SnO2 room temperature diluted magnetic semiconductor nano-powder | |
| CN110723967B (en) | Direct-current bias resistant low-temperature sintered ferrite material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20210901 |