CN100447073C - Stack structure and method of manufacturing the same - Google Patents
Stack structure and method of manufacturing the same Download PDFInfo
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- CN100447073C CN100447073C CNB2005800002932A CN200580000293A CN100447073C CN 100447073 C CN100447073 C CN 100447073C CN B2005800002932 A CNB2005800002932 A CN B2005800002932A CN 200580000293 A CN200580000293 A CN 200580000293A CN 100447073 C CN100447073 C CN 100447073C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A stack structure (1) is formed by stacking and bonding a plurality of substrates (2). The stack structure includes. Bonding films (4) each of which is interposed in a bonding region between, adjacent glass substrates (2), and bonded to oxygen atoms in the glass of the substrate by anodic bonding.
Description
Technical field
The present invention relates to a kind of by piling up stacked structure and the manufacture method thereof that a plurality of substrates of comprising at least one substrate form.
Background technology
In recent years, the mini-reactor that is called " microreactor " has developed and has dropped into actual use.Microreactor is to make multiple reactant, the mini-reactor that reacts each other when mixing as raw material, reagent and fuel.Microreactor is used to chemical reaction experiment, drug development, man-made organ development, the genome/DNA analysis instrument in little field and is used for the fundamental analysis instrument of microfluid engineering.Use the chemical reaction of microreactor to have the characteristic feature that is different from the general chemical reaction that uses beaker or flask.For example, because whole reactor is very small, so heat exchanger effectiveness is very high, can effectively carry out temperature control.Therefore, even need the reaction of precision temperature control or the reaction that needs sharply heat or cool off, can easily carry out.
More particularly, microreactor has one or more passage (runner) and reactors (reactive tank) that reactant reacts therein each other that make reagent flow.In Japanese Patent Application Publication publication No.2001-228159, a groove is piled up and the anode combination with silicon substrate and PYREX (registration mark) substrate that constitutes of glass that predetermined pattern is formed at wherein, form passage in the closed area between two substrates thus.A kind of combination technology represented in term " anode combination ".In this technology, in thermal environment, a positive pole is placed on above the silicon substrate, and a negative pole is placed on above the glass substrate.High voltage is applied between two electrodes so that produce electric field in glass substrate.The oxygen atom that has negative electrical charge in the glass substrate is moved to silicon substrate one side, to such an extent as to be attached between by atom on the interface of the oxygen atom in the glass substrate between glass substrate and silicon substrate in the silicon atom in the silicon substrate.The combination because substrate can not use any bonding agent, perhaps substrate can combination in air, this technology particularly substrate in conjunction with in exhibits excellent and well-known.
The someone attempt alternately piling up a plurality of glass substrates and a plurality of silicon substrate and with their anodes in conjunction with the microreactor that has stacked structure with generation.In this case, be difficult to silicon substrate is attached on two surfaces of glass substrate.Therefore, almost can not make stacked structure.As shown in Figure 12 A, in first anode integrating step, a silicon substrate 301 and glass substrate 302 are set, make a surperficial 301a of a surperficial 302a contact silicon substrate 301 of glass substrate 302.Between them, apply voltage with the electric field of generation, and on the interface between surperficial 301a and the 302a, cause combination towards direction shown in the solid arrow.Subsequently, in the second plate integrating step, as shown in Figure 12B, a new silicon substrate 303 and glass substrate 302 are set, make another surperficial 302b of a surperficial 303a contact glass substrate 302 of silicon substrate 303.Between silicon substrate, apply voltage to produce electric field towards direction shown in the solid arrow.The direction of this electric field is opposite with direction of an electric field (dotted arrow among Figure 12 B) in the first anode integrating step.This has a negative impact to silicon substrate 303 and anode is attached between another surface of the silicon substrate 302 on the silicon substrate 301 in first anode integrating step combination.
Summary of the invention
Advantageously, the invention enables and to adopt at least three substrates to make stacked structures.
Stacked structure according to first aspect present invention is by piling up and in conjunction with the stacked structure that a plurality of substrates form, comprising:
A binding film, this binding film are placed in first substrate in described a plurality of substrate and comprise in the calmodulin binding domain CaM between second substrate of glass, and by anode in conjunction with on the oxygen atom in the glass that is incorporated into second substrate.
According to stacked structure in this respect, can be combined in well between first substrate and second substrate in conjunction with the binding film on the oxygen atom in the glass that is incorporated into second substrate by anode.When binding film is arranged on the predetermined surface of substrate, this surface and comprise between the substrate of glass anode in conjunction with in electric field can set along predetermined direction.
Stacked structure according to second aspect present invention is by piling up and in conjunction with the stacked structure that a plurality of substrates that comprise at least one glass substrate form, comprising:
A buffer film, this buffer film places the calmodulin binding domain CaM of described a plurality of substrate glass substrates, and holds in the glass substrate the mobile alkali metal component because put on voltage on the glass substrate.
Stacked structure manufacture method according to third aspect present invention is the method that a kind of manufacturing comprises the stacked structure of a plurality of substrates, comprising:
Carry out the anode combination, will place described a plurality of substrate first substrate and to comprise on the oxygen atom of glass that binding film between second substrate of glass is attached to second substrate.
According to this manufacture method, can be combined in well between first substrate and second substrate in conjunction with the binding film on the oxygen atom in the glass that is incorporated into second substrate by anode.When binding film is arranged on the predetermined surface of substrate, this surface and comprise between the substrate of glass anode in conjunction with in electric field can set along predetermined direction.
Stacked structure manufacture method according to fourth aspect present invention is the method that a kind of manufacturing comprises the stacked structure of a plurality of substrates, comprises step:
A surface and another substrate contacts with glass substrate in a plurality of substrates; And
With certain state the glass substrate anode is attached on another substrate, in this state, the buffer film that can hold the alkali metal component in the glass substrate is arranged on another surface of glass substrate.
In the manufacture method according to fourth aspect present invention, even when the alkali metal component in the glass substrate moves to another face side of glass substrate because of the electric field in the anode combination, buffer film also holds alkali metal component.Therefore, can restrain deposition at another alkali metal component above face side of glass substrate.
Description of drawings
Figure 1A to 1D is the sectional view that shows the manufacturing step that piles up microreactor according to an embodiment of the invention;
Fig. 2 is the sectional view that is used to illustrate a step that replaces Fig. 1 C;
Fig. 3 shows a sectional view that piles up microreactor of finishing;
Fig. 4 A to 4C is the sectional view that is used to illustrate the manufacturing step that piles up microreactor in accordance with another embodiment of the present invention;
Fig. 5 be one show voltage and and the distance on buffer film 3 surfaces between the curve map of relation;
Fig. 6 shows from the curve map of anode in conjunction with the relation between the electric current that flows between time that begins and the electrode;
Fig. 7 A and 7B are respectively sectional view and the vertical views that is used to illustrate the manufacturing step of a kind of microreactor with stacked structure;
Fig. 8 is the sectional view that is used for key diagram 7A and 7B next procedure;
Fig. 9 is the sectional view that is used for key diagram 8 next procedures;
Figure 10 is the sectional view that is used for key diagram 9 next procedures;
Figure 11 is the sectional view of a microreactor of finishing 200; With
Figure 12 A and 12B are the sectional views that is used to illustrate an anode integrating step.
The specific embodiment
Illustrate below with reference to the accompanying drawings and be used to realize best mode of the present invention.Among the embodiment that will illustrate below technical preferred various limitation are added in realizing process of the present invention.But the spirit and scope of the present invention are not limited to following embodiment and described example.
[first embodiment]
Used first manufacture method of piling up microreactor of the present invention below with reference to Figure 1A to 4 explanation.
As shown in Figure 1A, prepare an ionic conducting glass substrate 2, this substrate is by adding alkali metal compound, as alkali metal oxide (for example, sodium oxide molybdena (Na
2O), lithia (Li
2O) or potassium oxide (K
2Or alkali carbonate (for example, lithium carbonate (Li O))
2CO
3)) and contain alkali metal, as sodium, lithium or potassium.Specifically, therefore the preferred glass that contains lithium that uses because lithium ion has very little radius, and move in glass in electric field easily.For example, the glass substrate (SW-YY that can obtain from ASAHI TECHNOGLASSCORPORATION) that contains PYREX (registration mark) glass of sodium atom or contain lithium atom can be used as glass substrate 2.
As shown in Figure 1B, a conductie buffer film 3 is formed on the whole surperficial 2a of glass substrate 2, and this buffer film has the alkali metal ion penetrability of appropriateness and is lower than glass substrate 2 and is higher than the resistivity of independent metal.A binding film 4 is formed at above the buffer film 3, and this binding film comprises by metal or comprises monofilm or its multilayer film that the alloy of metal constitutes.A zigzag groove 2c is formed in another surperficial 2b of glass substrate 2.When another surperficial 2b was attached to another glass substrate 2 (Fig. 1 D) that the back will illustrate and goes up by binding film 4, groove 2c formed the gap (runner) of a generation chemical reaction in the microreactor of the upper surface with sealing.The width of runner and the degree of depth be, for example 500 μ m or littler.
More particularly, contain Ta, Si and the O compound (below will be called " Ta-Si-O sill ") as constituent, with La: Sr: Mn: O=0.7: 0.3: 1: ratio (3-x) contains La, Sr, Mn and O (below will be called " La as the compound of constituent
0.7Sr
0.3MnO
3-x"), perhaps lead glass can be used as buffer film 3.In this case, 0≤x＜1.Ta-Si-O sill and La
0.7S
R0.3MnO
3-xIt all is amorphous oxide.
For the buffer film 3 that forms the Ta-Si-O sill, glass substrate 2 is placed in the sputtering unit as sputter target.By in the atmosphere that comprises argon gas and oxygen, using a plate that constitutes and contain Si by Ta to carry out sputter as target.In the sputter step, when ionic bombardment was on target, secondary ion was launched from target.To such an extent as to the secondary ion of launching impinges upon the buffer film 3 of Ta-Si-O sill on the glass substrate 2 and is formed on the lower surface of glass substrate 2.Specifically, when binding film 4 was made of Ta, the buffer film 3 of Ta-Si-O sill had between the two well in conjunction with effect.
In order to form La
0.7Sr
0.3MnO
3-xBuffer film 3, at first, with lanthanum nitrate (La (NO
3)
36H
2O), strontium nitrate (Sr (NO
3)
3) and manganese nitrate (Mn (NO
3)
36H
2O) be dissolved in the 1-Methyl-2-Pyrrolidone respectively separately.Then lanthanum nitrate hexahydrate, strontium nitrate solution and manganese nitrate solution are mixed.The solution of preparation is put on the surface of glass substrate 2.Make the surface that has applied solution glass substrate 2 be placed vacuum desiccator up.When obtaining vacuum pressure by the use vavuum pump in vacuum desiccator, the solution evaporation and the viscosity that are applied increase.Subsequently, glass substrate 2 is taken out and places an electric furnace from vacuum desiccator.When acquisition vacuum pressure and glass substrate 2 heat therein in electric furnace, La
0.7Sr
0.3MnO
3-x Buffer film 3 forms.
Preparation has order separately and is formed at buffer film 3 on the glass substrate 2 surperficial 2a and a plurality of samples of binding film 4 as stated above.
As shown in Fig. 1 C, a conductive silicon substrate 5 is attached on another surperficial 2b of glass substrate 2 by anode.At this moment, the negative pole of anode coupling apparatus 10 links to each other with binding film 4 by a conducting plate 8.The positive pole of anode coupling apparatus 10 links to each other with silicon substrate 5.To such an extent as to applying the electromotive force of voltage silicon substrate 5 becomes and is higher than binding film 4.Because binding film 4 is formed on the buffer film 3, so silicon substrate 5 has the electromotive force that is higher than buffer film 3.Dull and stereotyped 8 itself are used as stratie or comprise that in addition a heating element heater is used for glass substrate 2 to predetermined temperature.Silicon substrate 5 is pressed on the glass substrate 2 along the weight plate 9 that direction in the face evenly applies load by use.Then, apply voltage, and dull and stereotyped 8 glass substrate 2 is heated to predetermined temperature,, carry out the anode combination thus as 300 ℃ to 400 ℃ by generating heat by anode coupling apparatus 10.Alkali metal ion in the glass substrate 2 attracted near in the buffer film 3 of negative pole.Electronics in the glass substrate 2 gathers the surperficial 2b that contacts with silicon substrate 5.Taking place between glass substrate 2 and the silicon substrate 5 between firm atom in conjunction with (covalent bond) to such an extent as to two substrate 2,5 anode combinations.The silicon substrate 5 that uses can be a non-crystalline silicon or by silicon metal, the substrate that constitutes as monocrystalline silicon or polysilicon.
Because can hold on the surperficial 2a that the buffer film 3 of alkali metal ion is formed at glass substrate 2.Therefore the alkali metal ion appropriateness in the glass substrate 2 is distributed in the buffer film 3, and alkali metal ion passes through buffer film 3 in the anode combination.Because alkali metal ion is not confined on the interface or the interface between buffer film 3 and the binding film 4 between (in the above fully distribute) glass substrate 2 and the buffer film 3, therefore restrained any on these interfaces in conjunction with losing efficacy.In addition, because solid, the oxide that constitutes as alkali metal ion is deposited on the surface of binding film 4 hardly, therefore can prevent lip-deep any negative effect in conjunction with effect.
As shown in Figure 2, the glass substrate 6 that has on a surperficial 6a by metal film, alloy film or the film formed binding film 7 of its multilayer can replace silicon substrate 5 to use, and surperficial 6a can be attached on the glass substrate 2 by anode under 300 ℃ to 400 ℃ temperature.In this case, binding film 7 is selected from the above-mentioned material of binding film 4. Binding film 4,7 can use same material composition or different materials composition.The negative pole of anode coupling apparatus 10 is electrically connected (that is, the negative pole (not shown) being linked to each other with dull and stereotyped 8) with the binding film 4 of glass substrate 2 by dull and stereotyped 8.The positive pole of anode coupling apparatus 10 is electrically connected with the binding film 7 of glass substrate 6.To such an extent as to applying the electromotive force of voltage binding film 7 then becomes and is higher than binding film 4.Solid arrow represents that anode is in conjunction with the direction of an electric field that produces among Fig. 2.When using the substrate 6 of glass formation, the film as buffer film 3 can be placed between glass substrate 6 and the binding film 7.
After binding film 7 anodes with silicon substrate 5 or glass substrate 6 are attached on first glass substrate 2, as shown in Fig. 1 D, to have be formed at one on the surperficial 2a buffer film 3 and another or second glass substrate 2 of binding film 4 be placed on the glass substrate 2 of previous combination, to such an extent as to another surperficial 2b of second glass substrate 2 contacts with the binding film 4 of first glass substrate 2.Then, two substrate 2 anode combinations under 300 ℃ to 400 ℃ temperature.The surface portion that second glass substrate 2 is configured such that the binding film 4 of the glass substrate 2 of winning exposes.The positive pole of anode coupling apparatus 10 links to each other with the exposed surface of the binding film 4 of first glass substrate 2.The negative pole of anode coupling apparatus 10 links to each other with the binding film 4 of second glass substrate 2 by conducting plate 8.To such an extent as to applying the electromotive force of the new binding film of voltage 4 then becomes and is higher than previous binding film 4.Dotted arrow is represented the direction of an electric field that the first anode produces in conjunction with (anode combination among Fig. 1 C) among Fig. 1 D.Solid arrow represents that new anode is in conjunction with the direction of an electric field that produces.New anode in conjunction with interface on, be included in atom in the binding film 4 of first glass substrate 2 by on the oxygen atom of strong bonded in second glass substrate 2.
In this case, anode subsequently is in conjunction with can be according to carrying out in conjunction with identical direction of an electric field with anode previous shown in Fig. 1 C.Therefore, not can not reduced in the part of previous anode combination by the electric field in the anode combination subsequently in conjunction with effect.
When another surperficial 2b of second glass substrate 2 will be attached on the binding film 4 of first glass substrate 2 by anode, binding film 4 needn't always be formed on second substrate 2.In this case, the negative pole of anode coupling apparatus 10 links to each other with the buffer film 3 of second glass substrate 2 by dull and stereotyped 8.The positive pole of anode coupling apparatus 10 links to each other with the exposure binding film 4 of first glass substrate 2.After the anode combination, binding film 4 is formed on the buffer film 3 of new glass substrate 2.
Afterwards, repeat step shown in Fig. 1 D with continue to pile up with anode in conjunction with a plurality of glass substrates 2 that have buffer film 3 and binding film 4 separately, as shown in Figure 3.In Fig. 3, anode in conjunction with from upper glass substrate 2 to following glass substrate 2 the order carry out.Like this, finish and pile up microreactor 1 by piling up glass substrate 2 as chemical-reacting furnace.Have buffer film 3 and the binding film 4 that is formed in proper order on following glass substrate 2 one side surfaces with reference to upper glass substrate 2 in 3, two adjacent glass substrate 2 of figure.Following glass substrate 2 is attached on the binding film 4 of upper glass substrate 2 by anode.
As another example of anode combination, buffer film 3 is set on dull and stereotyped 8.Do not have buffer film 3 also not have binding film 4 to be formed on the surperficial 2a of glass substrate 2, its another surperficial 2b should be attached on silicon substrate 5 or the glass substrate 6 by anode.Be positioned at surperficial 2a contact buffer film 3 on dull and stereotyped 8 to such an extent as to have the glass substrate 2 of silicon substrate 5 or glass substrate 6 on it.The negative pole of anode coupling apparatus 10 is electrically connected with buffer film 3 by dull and stereotyped 8.The positive pole of anode coupling apparatus 10 is electrically connected with the binding film 7 of silicon substrate 5 or glass substrate 6.Anode is in conjunction with carrying out in this state.At this moment, the alkali metal ion deposit can produce on dull and stereotyped 8 by buffer film 3 hardly.After binding film 4 was formed on the surperficial 2a that does not almost have sedimental previous or first glass substrate 2, new or second glass substrate 2 was attached on the surperficial 2a of first glass substrate 2 by anode.
With reference to figure 3, be higher than following binding film 4 by the electromotive force that applies the binding film 4 (silicon substrate 5 that is used for uppermost glass substrate 2) of voltage above making and make each glass substrate 2 be attached to following binding film 4 by anode.Therefore, in the anode combination, the electric field under pointing to is put on all glass substrates 2, shown in the solid line arrow.The anode that arrow shown in Fig. 3 is illustrated in each glass substrate 2 in conjunction with in the direction of an electric field of generation effect.
In example shown in Figure 3, glass substrate 2 carries out the anode combination one by one.In fact, as shown in Fig. 4 A to 4C, the glass substrate of a plurality of anode combinations can carry out the anode combination.With reference to figure 4A, be placed in that binding films 4 contacts flat board 8 above the conducting plate 8 to such an extent as to have first glass substrate 2 that order is formed at a buffer film 3 on the surperficial 2a and binding film 4.To such an extent as to will have another surface that order is formed at second glass substrate 2 of a buffer film 3 on the surperficial 2a and binding film 4 ' be placed on, first glass substrate 2 go up second glass substrate 2 ' binding film 4 contact first glass substrate 2.By weight 9 with load put on second glass substrate 2 ' another surperficial 2b on.In this state, the positive pole of anode coupling apparatus 10 be arranged on second glass substrate 2 ' the exposed surface of binding film 4 of surperficial 2a one side be electrically connected.The negative pole of anode coupling apparatus 10 is electrically connected with binding film 4 on being arranged on first glass substrate 2 by conducting plate 8.To such an extent as to carry out the first anode in conjunction with producing electric field along direction shown in the solid arrow.
Subsequently, as shown in Fig. 4 B, will have be arranged at one on the surperficial 2a buffer film 3 and the 3rd glass substrate 2 of binding film 4 " be placed between dull and stereotyped 8 and first glass substrate 2.At this moment, the positive pole of anode coupling apparatus 10 is electrically connected with the exposure binding film 4 of first glass substrate 2.Negative pole by dull and stereotyped 8 and the 3rd glass substrate 2 " binding film 4 be electrically connected.In this state, carry out the second plate combination.Direction of an electric field and the first anode in conjunction with in direction of an electric field (dotted line) identical.Form like this glass substrate 2,2 of combination ' and 2 " first substrate in batch 11.
Afterwards, as first substrate in batch 11, by first anode combination and second plate in conjunction with second substrate in batch 11 that forms ' be placed between first substrate in batch 11 and dull and stereotyped 8.The positive pole of anode coupling apparatus 10 and the 3rd glass substrate 2 that is arranged on first substrate in batch 11 " on binding film 4 link to each other.The negative pole of anode coupling apparatus 10 by conducting plate 8 be arranged on second substrate in batch 11 ' the 3rd glass substrate 2 " on binding film 4 link to each other.In this state, carry out the third anode combination.Direction of an electric field (dotted line) in direction of an electric field (solid line) and the first anode combination of this moment and the second plate combination is identical.
As mentioned above, in this embodiment, can be formed at by the binding film 4 of the oxygen atom oxidation in the glass substrate 2 by the anode combination will be by surperficial 2a one side of anode combination.Therefore, as shown in Fig. 1 D, can carry out anode combination near the part of surperficial 2a as negative pole as anodal and new glass substrate 2 by using binding film 4.At this moment, because voltage is applied between two surfaces of new glass substrate 2, therefore in new glass substrate 2, produce electric field.But, can produce electric field hardly in the glass substrate 2 of combination formerly.Specifically, in process in conjunction with new glass substrate 2, the rightabout electric field of electric field in not having generation in the glass substrate 2 formerly and previous anode combining.When binding film 4 be formed at the glass substrate 2 mating surface facing surfaces that before combined on the time, new glass substrate 2 can be incorporated on the glass substrate 2 of previous combination.In addition, because therefore variable color does not take place in not generation effect in opposite direction in glass substrate 2 of the electric field in each anode binding operation because of reversed electric field in glass substrate 2.Therefore, can easily make stacked structure.
In addition, as shown in Fig. 4 A to 4C, the glass substrate 2 of anode combination is a side of anode combination once more, and promptly surperficial 2a has can be by the anode combination by the binding film 4 of the oxygen atom oxidation in the glass substrate 2.When the anode combination was repeatedly carried out, electric field pointed to equidirectional in each anode binding operation.Therefore, do not take place in conjunction with losing efficacy or reducing in conjunction with effect because of reversed electric field.
The glass substrate 2 of anode combination is a side of anode combination once more, and promptly surperficial 2a has buffer film 3.Alkali metal ion in the glass substrate 2 is dispersed in the buffer film 3 of previous anode combination.Therefore, the lip-deep any deposition that can restrain interface between the surperficial 2a of buffer film 3 and anode combination once more or buffer film 3.This point can description below.As shown in Figure 5, after the anode combination, in glass substrate 2, flow to such an extent as to alkali metal component in the glass substrate 2 and oxygen are ionized at once and be used as the carrier Weak current.Therefore, the electric field E in the glass substrate 2
aBe higher than the electric field E in the buffer film 3
bAt this moment, each electric field E
aAnd E
bBy distance buffer film 3 surfaces apart from d with apart from the function representation of time t of anode in conjunction with beginning.Notice that binding film 4 is made of metal or alloy, therefore have the resistivity and the sheet resistance of the buffer film 3 that forms far below high resistance glass substrate 2 or by metal oxide film.Therefore, the voltage distribution rate can be ignored.In the anode combination, alkali metal ion is attracted and moves to negative pole one side.Suppose that q is the electric charge of alkali metal ion.The following expression of the power F that alkali metal ion is subjected in the glass substrate 2:
F＝q·E
a
On the other hand, the following expression of power f that alkali metal ion is subjected in the buffer film 3:
f＝q·E
b
Therefore, for the power that alkali metal ion is subjected to, can be with electric field E
aAnd E
bCompare.When time t is zero or enough hour, obtain the electric field E shown in Fig. 5
aAnd E
bNo matter the position in glass substrate 2 and the buffer film 3, electric field E
aAnd E
bHas almost predetermined value.Because the electrical conductivity of buffer film 3 is higher than glass substrate 2, so electric field E
bLess than electric field E
aIn addition, electric field E
bNon-vanishing, and alkali metal ion is subjected to the small power towards the direction on buffer film 3 surfaces.Therefore, the alkali metal ion in the glass substrate 2 moves to buffer film 3 to a certain extent.
When time t is fully passed (anode is in conjunction with start-up time), electric field E
aAnd E
bIn glass substrate 2 and buffer film 3, do not have predetermined value.Curve map shown in Fig. 5 becomes the curve that extends upwardly from straight line.This is to take place because of the screen effect of cation, in nature near the oxidation film of MOS device (MOS) or similar near the electronics in the semiconductor layer of electrode in the electrolytic solution.If buffer film 3 does not exist, alkali metal ion just moves always and disappears up near electric charge negative pole.Therefore, alkali metal ion with, for example the form of alkali metal oxide is deposited on the surface of glass substrate 2.When buffer film 3 does not exist, with the electric field E in the glass substrate 2
AAlso use a function representation, its position in curve map extends upwardly because of screen effect.Say electric field E qualitatively
b＜electric field E
a＜electric field E
AWhen buffer film 3 did not exist, the gathering of alkali metal ion concentrated near on the face or interface on glass substrate 2 surfaces.But, when the buffer film 3 that can hold alkali metal ion to a certain extent and have the resistivity that is lower than glass substrate 2 exists, by anode in conjunction with disperseing electric-field intensity can prevent that the gathering of the alkali metal ion in the glass substrate 2 from concentrating on the surperficial 2a.
The gathering that can prevent the alkali metal ion in the glass substrate 2 concentrates on the interface between buffer film 3 and the glass substrate 2.In addition, can prevent to be deposited on the surface of binding film 4 by the compound that alkali metal ion forms.Even when new glass substrate 2 is attached on the binding film 4 of glass substrate 2 of previous anode combination by anode, new glass substrate 2 can not peeled off from the binding film 4 of the glass substrate 2 of previous anode combination yet.Therefore, can provide and have the very stacked structure of high bond strength.
The gathering that can prevent the alkali metal ion in the glass substrate 2 concentrates on the interface between buffer film 3 and the glass substrate 2.In addition, can prevent to be deposited on the surface of binding film 4 by alkali metal ion.Therefore, other material can be attached on the binding film 4.
(for example, when SW-YY) being used as glass substrate 2, the voltage that applies in the anode combination can be very low when the glass substrate that contains lithium.Fig. 6 is a curve map, has shown in use to contain relation between the electric current that the anode combination of glass substrate (SW-YY) of lithium and the anode that uses the glass substrate (production number that can obtain from CORNING be 7740 PYREX (registration mark)) do not contain lithium flow between in conjunction with time of beginning and electrode in conjunction with the middle distance anode.Buffer film 3 is made of the Ta-Si-O sill with 300nm thickness.For the glass substrate that contains lithium, the voltage that applies between electrode is 300V.For the glass substrate that does not contain lithium, the voltage that applies between electrode is 800V.In Fig. 6, can be clear that, though when the glass substrate that contains lithium under 300V voltage anode in conjunction with the time, electric current and time change almost with the glass substrate that does not contain lithium under 800V voltage anode in conjunction with in performance identical.Therefore, when the glass substrate that contains lithium (for example, the SW-YY that can obtain from ASAHI TECHNOGLASS CORPORATION) when being used as glass substrate 2, anode in conjunction with in the voltage that applies can be very low.Lithium ion has approximately
Radius, this is much smaller than sodium ion, therefore anode in conjunction with in glass substrate 2, move easily.
As shown in Figure 3, has binding film 4 and do not have a plurality of glass substrates 2 of anode combination to be stacked separately.The binding film 4 of uppermost glass substrate 2 links to each other with the positive pole of anode coupling apparatus 10.The negative pole of anode coupling apparatus 10 links to each other with the binding film 4 of nethermost glass substrate 2 or nethermost glass substrate 2.In this state, a plurality of glass substrates 2 and a plurality of binding films 4 anode combination at once that is in contact with it.If glass substrate 2 is not joined on another glass substrate or the conducting film after the anode combination, nethermost glass substrate 2 needn't always have buffer film 3 and binding film 4.
When in identical direction of an electric field, carrying out a plurality of anodes by above-mentioned manufacture method when handling, go up and do not have a buffer film 3 even binding film 4 is set directly at the surperficial 2a of glass substrate 2, also might in conjunction with.
In above-mentioned manufacture method, new glass substrate 2 by sequence stack in dull and stereotyped 8 one sides and anode combination.But the present invention is not limited to this.Glass substrate 2 shown in silicon substrate 5 shown in Figure 1A to 1D and glass substrate 2, Fig. 2 and 6 or Fig. 4 shown in glass substrate 2,2 ' and 2 ", if put upside down on the relative position of vertical direction and upper and lower surface also can the anode combination for they.More particularly, the flat board 8 of silicon substrate 5, glass substrate 6 or glass substrate 2 ' put thereon is placed on downside.Glass substrate 2 is placed with the upper surface that makes the surperficial 2b contact of another that have groove 2c silicon substrate 5, and binding film 7 is arranged on the upper surface of glass substrate 6, perhaps binding film 4 be arranged on glass substrate 2 ' upper surface one side.Weight plate 9 is placed in above the binding film 4 on surperficial 2a one side that is arranged at glass substrate 2.Silicon substrate 5, be arranged on the binding film 7 on the glass substrate 6 or be arranged on glass substrate 2 ' the binding film 4 of surperficial 2a one side link to each other with the positive pole of anode coupling apparatus 10.The binding film 4 that is arranged on surperficial 2a one side of glass substrate 2 links to each other with negative pole.Carry out the anode combination in this state.New glass substrate 2 sequence stacks that will have buffer film 3 and binding film 4 in subsequently, on making surperficial 2a sensing.Weight plate 9 is placed on the new glass substrate 2.The binding film 4 of uppermost glass substrate 2 links to each other with negative pole.In this state, carry out the anode combination.When using the weight plate 9 of conductive material formation, the negative pole of anode coupling apparatus 10 can be electrically connected with uppermost binding film 4 by weight plate 9.
This stacked structure (piling up microreactor 1) is used to by the convert hydrocarbons class A fuel A, and acquisition will be fed to the converter of the hydrogen of fuel cell as methyl alcohol.Specifically, this stacked structure can be used to evaporate the evaporimeter of HC fuel, the HC fuel of evaporation is changed into the hydrogen converter of hydrogen or remove the carbon monoxide removal device of the carbon monoxide that is produced as byproduct by the hydrogen converter by chemical reaction.
In the above-described embodiments, buffer film 3 is arranged on glass substrate 2 and mating surface facing surfaces one side.But the present invention is not limited to this.Can carry out the anode combination by on the whole apparent surface's of contact flat board 8, buffer film 3 being set.Consider the dislocation that takes place when glass substrate 2 is placed on dull and stereotyped 8, preferably, buffer film 3 has greater than the area of glass substrate 2 so that the whole surface of glass substrate 2 can be capped.
In the above-described embodiments, binding film 4 is arranged on the glass substrate 2.But buffer film 3 can be set directly on the glass substrate 2 and binding film 4 is not set.As selection, there is not the glass substrate 2 of binding film 4 can be placed on above the buffer film 3 on dull and stereotyped 8 and the anode combinations yet.
[second embodiment]
Used second manufacture method of piling up microreactor of the present invention below with reference to the explanation of sectional view shown in Fig. 7 A to 11.
Fig. 7 B is the vertical view of first glass substrate 101.Fig. 7 A is the sectional view that obtains along Fig. 7 B center line VIIA-VIIA.
As shown in Figure 7A and 7B, prepare first glass substrate 101.A zigzag groove 101a is formed in the surface of first glass substrate 101.A binding film 102 is formed at above first glass substrate, the 101 described parts of surface except groove 101a.The constituent of first glass substrate 101 is identical with glass substrate 2 among first embodiment.All glass substrates that are used for second embodiment have and the identical constituent of glass substrate 2 among first embodiment.
In order to form groove 101a, the known processing of sandblasting can be accepted in a surface of first glass substrate 101.As selection, can carry out known photoetching and etching.
In order to form binding film 102, can use the method for peeling off.More particularly, when keeping groove 101a to be covered by resist, binding film is completed on a described surface of first glass substrate 101 by evaporation.Binding film is removed with resist with the overlapping part of groove 101a, thus binding film 102 is stayed above the part except that groove 101a.The composition of binding film 102 is identical with binding film 4 (Figure 1A to 1D) among first embodiment.All binding films that use among second embodiment have and the identical composition of binding film 4 among first embodiment.
As shown in Figure 8, preparation has second glass substrate 103 that is formed at a lip-deep zigzag groove 103a.A buffer film 104 is formed on another surface of second glass substrate 103.A binding film 105 is formed at above the buffer film 104.The composition of buffer film 104 is identical with the buffer film 3 of first embodiment with the formation method.All buffer films that use among second embodiment have and the identical constituent of buffer film 3 among first embodiment.The groove 101a plane symmetry of the groove 103a and first glass substrate 101.
As shown in Figure 9, when keeping groove 101a relative with groove 103a, with the described surface pressure of second glass substrate 103 on binding film 102.By power supply 10 voltage is applied between binding film 102 and 105, is higher than binding film 102 to such an extent as to the electromotive force of binding film 105 becomes.In addition, structure is heated to 300 ℃ to 400 ℃.Adopt this processing to carry out the anode combination.Because buffer film 104 is formed on second glass substrate 103, therefore can prevent that the gathering of alkali metal ion from concentrating on another surface of second glass substrate 103.
As shown in Figure 10, preparation is used for the 3rd heat insulation glass substrate 106, and this substrate has order and is formed at a lip-deep buffer film 107 and binding film 108.With another surface pressure of the 3rd glass substrate 106 on binding film 105.By voltage source 10 voltage is applied between binding film 105 and 108, is higher than binding film 105 to such an extent as to the electromotive force of binding film 108 becomes.In addition, structure is heated to 300 ℃ to 400 ℃.Adopt this processing to carry out the anode combination.A thin film heater 151 (Figure 11) that is made of thermo electric material is formed at above the part of binding film 108.The structure that obtains is used as combustion fuel evaporator 171, and this evaporimeter evaporates the combustion fuel that flows through the runner that groove 101a and 103a by glass substrate 101 and 103 form by the heat from thin film heater 151.The runner that the combustion fuel of evaporation is supplied to the runner that formed by the groove 115a that is formed in the glass substrate 115 (back will illustrate), formed by the groove 124a that is formed in the glass substrate 124 and by being formed at the runner that groove 133a in glass substrate 133 and 136 and 136a form.
Below, just as first glass substrate 101 being attached on second glass substrate 103 or when being attached to the 3rd glass substrate 106 on second glass substrate 103, glass substrate 109,112,115,118,121,124,127,130,133 and 136 is repeated below step (a) and (b) presses this order combination by order.
(a) buffer film and binding film are formed on the surface of new glass substrate in proper order.
(b) another surface of new glass substrate is crushed on the binding film that forms on the glass substrate of previous anode combination.Voltage is applied between previous binding film and the new binding film, is higher than the binding film of new glass substrate to such an extent as to the conjunctival electromotive force of previous glass substrate becomes.In addition, structure is heated to 300 ℃ to 400 ℃.That is to say, carry out the anode combination.
When glass substrate 109,112,115,118,121,124,127,130,133 and 136 as stated above order in conjunction with the time, be accomplished as the microreactor 200 that piles up of chemical-reacting furnace shown in a kind of Figure 11.With reference to Figure 11, to such an extent as to each glass substrate 103,106,109,112,115,118,121,124,127,130,133 and 136 has and is higher than top conjunctival electromotive force and anode is attached on the top binding film by applying the following binding film of voltage.Therefore, in each glass substrate 103,106,109,112,115,118,121,124,127,130,133 and 136, in the anode combination, apply the electric field in the sensing.In example shown in Figure 11, the endface position of glass substrate matches.In order easily structure to be connected on the anode coupling apparatus, preferably, the endface position of glass substrate is shifted, as shown in Fig. 4 C.
Below explanation is piled up microreactor 200.
When forming the gap around the thin film heater 151, the 4th glass substrate 109 is attached on the binding film 108 by anode.In the surperficial facing surfaces that zigzag groove 109a is formed on the 4th glass substrate 109 with binding film 108 combines.Buffer film 110 and binding film 111 orders are formed on the part of this surface except that groove 109a.
The 5th glass substrate 112 is attached on the binding film 111 by anode.In the surface that groove 112a with groove 109a plane symmetry is formed on the 5th glass substrate 112 with binding film 111 combines.Buffer film 113 and binding film 114 orders be formed at the mating surface facing surfaces on.
The 6th glass substrate 115 is attached on the binding film 114 by anode.In the surface that zigzag groove 115a is formed on the 6th glass substrate 115 with binding film 114 combines.A kind of combustion catalyst 152 is formed on the wall surface of groove 115a.On the surperficial facing surfaces that buffer film 116 and binding film 117 orders are formed on the 6th glass substrate 115 with binding film 114 combines.A thin film heater 153 is formed at above the part of binding film 117.Transform fuel vaporizer 172 and comprise that a microreactor, one transform fuel vaporization combustion chamber and thin film heater 153, this microreactor comprises glass substrate 109 and 112, buffer film 110 and binding film 111, transforms the combustion catalyst 152 that the fuel vaporization combustion chamber comprises the 6th glass substrate 115 and heating microreactor.The conversion fuel that conversion fuel vaporizer 172 will evaporate is fed to hydrogen converter 174 (back will illustrate).
When forming the gap around the thin film heater 153, the 7th glass substrate 118 anodes are attached on the binding film 117.In the surperficial facing surfaces that zigzag groove 118a is formed on the 7th glass substrate 118 with binding film 117 combines.A kind of carbon monoxide oxidation catalyst 154 is formed on the wall surface of groove 118a.Buffer film 119 and binding film 120 orders are formed at this apparent surface and go up on the part except that groove 118a.
The 8th glass substrate 121 is attached on the binding film 120 by anode.One with the zigzag groove 121a of groove 118a plane symmetry is formed on the 8th glass substrate 121 with binding film 120 combines surface in.A kind of carbon monoxide oxidation catalyst 155 is formed on the wall surface of groove 121a.On the surperficial facing surfaces that buffer film 122 and binding film 123 orders are formed on the 8th glass substrate 121 with binding film 120 combines.
The 9th glass substrate 124 is attached on the binding film 123 by anode.In the surface that zigzag groove 124a is formed on the 9th glass substrate 124 with binding film 123 combines.A kind of combustion catalyst 142 is formed on the wall surface of groove 124a.On the surperficial facing surfaces that buffer film 125 is formed on the 9th glass substrate 124 with binding film 123 combines.A binding film 126 forms around buffer film 125.A thin film heater 156 is formed at the core of buffer film 125.
Carbon monoxide removal device 173 has a microreactor, carbon monoxide removal combustion chamber and thin film heater 156, wherein microreactor comprises glass substrate 118 and 121, buffer film 119 and binding film 120, and the carbon monoxide removal combustion chamber comprises the combustion catalyst 142 of glass substrate 124 and heating microreactor.Carbon monoxide removal device 173 is oxidized to carbon dioxide with the carbon monoxide that hydrogen converter 174 (back will illustrate) produces.
When forming the gap around the thin film heater 156, the tenth glass substrate 127 anodes are attached on the binding film 126.In the surperficial facing surfaces that zigzag groove 127a is formed on the tenth glass substrate 127 with binding film 126 combines.A kind of fuel reforming catalyst 157 is formed on the wall surface of groove 127a.Buffer film 128 and binding film 129 orders are formed at this apparent surface and go up on the part except that groove 127a.
The 11 glass substrate 130 is attached on the binding film 129 by anode.In the surface that groove 130a with groove 127a plane symmetry is formed on the 11 glass substrate 130 with binding film 129 combines.A kind of fuel reforming catalyst 158 is formed on the wall surface of groove 130a.On the surperficial facing surfaces that buffer film 131 and binding film 132 orders are formed on the 11 glass substrate 130 with binding film 129 combines.
The 12 glass substrate 133 is attached on the binding film 132 by anode.Zigzag groove 133a be formed at the mating surface facing surfaces in.A kind of combustion catalyst 159 is formed on the wall surface of groove 133a.Buffer film 134 and binding film 135 orders are formed on the part of this apparent surface except that groove 133a.
The 13 glass substrate 136 is attached on the binding film 135 by anode.One with the zigzag groove 136a of groove 133a plane symmetry is formed on the 13 glass substrate 136 with binding film 135 combines surface in.A kind of combustion catalyst 160 is formed on the wall surface of groove 136a.On the surperficial facing surfaces that buffer film 137 and binding film 138 orders are formed on the 13 glass substrate 136 with binding film 135 combines.A thin film heater 161 is formed on the part of binding film 138.
Hydrogen converter 174 has a microreactor, a hydrogen transforms combustion chamber and thin film heater 161, wherein microreactor comprises glass substrate 127 and 130, buffer film 128 and binding film 129, and hydrogen transforms the combustion catalyst 159 and 160 that the combustion chamber comprises glass substrate 133 and 136, buffer film 134, binding film 135 and heating microreactor.The conversion fuel that hydrogen converter 174 will transform fuel vaporization 172 evaporations changes into hydrogen.Hydrogen transforms 174 will comprise hydrogen and the fluid-mixing of the carbon monoxide that produces as byproduct is fed to carbon monoxide removal device 173.
In the combustion fuel evaporator 171 of microreactor 200, work as combustion fuel, when flowing through groove 101a and 103a as methyl alcohol, combustion fuel is by heat heating and evaporation from thin film heater 151 or combustion chamber (back will illustrate).The combustion chamber of mixing and being supplied to hydrogen remover 174, carbon monoxide removal device 173 and conversion fuel vaporizer 172 by the combustion fuel of evaporator evaporation with air.That is to say that combustion fuel flows to the runner that the runner that formed by groove 133a and 136a, runner that groove 124a forms and groove 115a form.
The combustion fuel of evaporation is the oxidized and burning by the catalytic action of combustion catalyst 152 when flowing through the runner of groove 115a.Equally, the combustion fuel of evaporation oxidized and burning by the catalytic action of combustion catalyst 142 when flowing through the runner of groove 124a.The fuel of evaporation is the oxidized and burning by the catalytic action of combustion catalyst 159 and 160 when flowing through the runner of groove 133a and 136a.Burning produces heat, with thermal conversion fuel vaporizer 172, carbon monoxide removal device 173 and hydrogen converter 174 to promote to transform the reaction in fuel vaporizer 172, carbon monoxide removal device 173 and the hydrogen converter 174.Preferably, the main thermal source that transforms in fuel vaporizer 172, carbon monoxide removal device 173 and the hydrogen converter 174 is these combustion chambers.Preferably, thin film heater 153,156 and 161 is used as auxiliary thermal source to regulate required temperature in conversion fuel vaporization 172, carbon monoxide removal device 173 and the hydrogen converter 174.
Evaporimeter is made of the 4th glass substrate 109 and the 5th glass substrate 112.More particularly, water and combustion fuel mainly pass through calory burning and thin film heater 153 heating and the evaporation of the 6th glass substrate 115 when flowing through the runner that is formed by groove 109a and 112a as methanol mixture.The combustion fuel of evaporation and the mixture of water flow to the runner that is formed by groove 127a and 130a.
The calory burning that the combustion chambers that the mixture of combustion fuel and water mainly forms by glass substrate 133 and 136 when flowing through groove 127a and 130a produce and from the heat heating of thin film heater 161, and change into hydrogen by fuel reforming catalyst 157 and 158.Also promptly, steam converter by glass substrate 127 and 130 and fuel reforming catalyst 157 and 158 form.In this steam transponder, carbon monoxide and carbon dioxide also produce as byproduct.Product mixes with air and is supplied to the runner that is formed by groove 118a and 121a as hydrogen.
Work as product, when flowing through the runner that is formed by groove 118a and 121a as hydrogen, the carbon monoxide in the product is by the catalytic action oxidation of carbon monoxide oxidation catalyst 154 and 155.By this processing, carbon monoxide is removed.
Product is fed to the fuel electrode of fuel cell from the carbon monoxide removal device as hydrogen.Airborne oxygen is supplied to air electrode.Electric energy produces by the electrochemical reaction in the fuel cell.
Even in microreactor 200, also can prevent alkali-metal gathering or alkali-metal deposition in each glass substrate.Therefore, the bond strength of anode mating surface is very high.Therefore, can provide and have the very microreactor 200 of high bond strength.
As mentioned above, in this embodiment, in post processing, the silicon substrate anode is attached to the electric field of generation effect in glass substrate in lip-deep process of glass substrate and has identical direction with the electric field that in pre-treatment, another silicon substrate anode is attached to generation effect in glass substrate in another lip-deep process of glass substrate.Therefore can prevent that the combination between another surface of the silicon substrate of previous anode combination and glass substrate is subjected to negative effect.In addition, in anode combination, in glass substrate, produce positive charge, during as sodium ion, can prevent that a near surface at glass substrate deposits as compound ion because of the electric field that produces in the pre-treatment as carrier in pre-treatment.Therefore, the combination between silicon substrate and the glass baseplate surface is not restrained in the post processing.
Because there is not reversed electric field generation effect in glass substrate 103,106,109,112,115,118,121,124,127,130,133 and 136, therefore in glass substrate 103,106,109,112,115,118,121,124,127,130,133 and 136 variable color does not take place.Therefore, can easily make microreactor 200 with stacked structure.
When the glass substrate that contains lithium was used as glass substrate 103,106,109,112,115,118,121,124,127,130,133 and 136, the voltage in the anode combination can be very low.
Claims (28)
1, a kind of by piling up and, comprising in conjunction with the stacked structure (1,200) that a plurality of substrates (2,101,103,106,109,112,115,118,121,124,127,130,133,136) form:
Be placed in first substrate in described a plurality of substrate and comprise binding film (4,102,105,108,111,114,117,120,123,126,129,132,135,138) in the calmodulin binding domain CaM between second substrate of glass, described binding film by anode in conjunction with on the oxygen atom that is incorporated in the glass of second substrate
Wherein when binding film not by anode in conjunction with and when combining with oxygen, binding film contains a kind of material, this material has its fusing point and is one of at least 2000 ℃ metal and alloy.
2, stacked structure according to claim 1, wherein when binding film not by anode in conjunction with and when combining with oxygen, binding film has a kind of material, this material contains Ta, W, Mo, TaSi
2, WSi
2And MoSi
2In at least a.
3, stacked structure according to claim 1 and 2, also comprise buffer film (3,104,107,110,113,116,119,122,125,128,131,134,137), described buffer film places between the binding film of oxidation and first substrate and has the resistivity that is lower than described a plurality of substrates.
4, stacked structure according to claim 1 and 2, at least one has the gap that chemical reaction wherein takes place in wherein said first substrate and second substrate.
5, stacked structure according to claim 1 and 2 only contains alkali metal in the glass of wherein said second substrate.
6, stacked structure according to claim 1 and 2, wherein the glass of second substrate is added with in sodium oxide molybdena, lithia, potassium oxide and the lithium carbonate at least a.
7, stacked structure according to claim 1 and 2 also comprises the binding film between the 3rd substrate that is placed in second substrate and comprises glass, this binding film by anode in conjunction with on the oxygen atom that is incorporated in the glass of the 3rd substrate.
8, stacked structure according to claim 1, wherein first substrate comprises glass substrate.
9, stacked structure according to claim 1 and 2 also comprises the converter (1,171,172,173,174) that is arranged in described a plurality of substrate, has the gap that conversion reaction wherein takes place.
10, a kind of by piling up and, comprising in conjunction with the stacked structure (1,200) that a plurality of substrates (2,101,103,106,109,112,115,118,121,124,127,130,133,136) that comprise at least one glass substrate form:
Buffer film (3,104,107,110,113,116,119,122,125,128,131,134,137), described buffer film places the calmodulin binding domain CaM of described a plurality of these glass substrates of substrate, and hold in this glass substrate mobile alkali metal component because put on voltage on the glass substrate
Be placed in the binding film (4,102,105,108,111,114,117,120,123,126,129,132,135,138) in the described calmodulin binding domain CaM, described binding film by anode in conjunction with on the oxygen atom that is incorporated in the glass of described glass substrate,
Wherein when binding film not by anode in conjunction with and when combining with oxygen, binding film contains a kind of material, this material has its fusing point and is one of at least 2000 ℃ metal and alloy.
11, stacked structure according to claim 10, wherein buffer film has a kind of material, and this material has the resistivity that is lower than glass substrate.
12, stacked structure according to claim 10, wherein buffer film has amorphous oxide.
13, stacked structure according to claim 10 wherein contains Ta, Si and the O compound as constituent, contains La, Sr, Mn and O as at least a buffer film that is used as in the compound of constituent and the lead glass.
14, according to arbitrary described stacked structure in the claim 10 to 13, wherein said buffer film is placed on the whole mating surface between glass substrate and another substrate.
15,, also comprise the converter (1,171,172,173,174) that is arranged in described a plurality of substrate, has the gap that conversion reaction wherein takes place according to arbitrary described stacked structure in the claim 10 to 13.
16, a kind of manufacturing comprises the method for the stacked structure (1,200) of a plurality of substrates (2,101,103,106,109,112,115,118,121,124,127,130,133,136), comprising:
Carry out the anode combination, will place described a plurality of substrate first substrate and to comprise on the oxygen atom of glass that binding film (4,102,105,108,111,114,117,120,123,126,129,132,135,138) between second substrate of glass is attached to second substrate
Wherein when binding film not by anode in conjunction with and when combining with oxygen, binding film contains a kind of material, this material has its fusing point and is not less than one of 2000 ℃ metal and alloy.
17, stacked structure manufacture method according to claim 16 also comprises and carries out the anode combination, will place described a plurality of substrate second substrate and to comprise on the oxygen atom of glass that binding film between the 3rd substrate of glass is attached to second substrate.
18, stacked structure manufacture method according to claim 17, wherein between first substrate and second substrate anode in conjunction with in direction of an electric field and second substrate and the 3rd substrate between direction of an electric field in the anode combination identical.
19, stacked structure manufacture method according to claim 17, wherein the anode between first substrate and second substrate in conjunction with second substrate and the 3rd substrate between anode combine respectively and carry out.
20, stacked structure manufacture method according to claim 17, wherein the anode between first substrate and second substrate in conjunction with second substrate and the 3rd substrate between anode combine simultaneously and carry out.
21, stacked structure manufacture method according to claim 16, wherein the anode between first substrate and second substrate carries out in conjunction with the glass that the negative pole that is connected to binding film and anode coupling apparatus by the positive pole with the anode coupling apparatus is connected to second substrate.
22, according to arbitrary described stacked structure manufacture method in the claim 16 to 21, wherein when binding film not by anode in conjunction with and when combining with oxygen, binding film has a kind of material, this material contains Ta, W, Mo, TaSi
2, WSi
2And MoSi
2In at least a.
23, a kind of manufacturing comprises the method for the stacked structure (1,200) of a plurality of substrates (2,101,103,106,109,112,115,118,121,124,127,130,133,136), may further comprise the steps:
A surface and another substrate contacts with a glass substrate in described a plurality of substrates; And
With certain state this glass substrate anode is attached on another substrate, in this state, the buffer film (3,104,107,110,113,116,119,122,125,128,131,134,137) that can hold the alkali metal component in this glass substrate is arranged on another surface of this glass substrate
Wherein be provided with binding film (4,102,105,108,111,114,117,120,123,126,129,132,135,138) in the calmodulin binding domain CaM between described substrate, described binding film by anode in conjunction with on the oxygen atom that is incorporated in the glass of glass substrate
Wherein when binding film not by anode in conjunction with and when combining with oxygen, binding film contains a kind of material, this material has its fusing point and is one of at least 2000 ℃ metal and alloy.
24, stacked structure manufacture method according to claim 23 is wherein carried out the anode combination so that the electromotive force of described surface one side of this glass substrate is higher than described another surperficial side.
25, stacked structure manufacture method according to claim 23, wherein said buffer film has a kind of material, and this material has the resistivity that is lower than this glass substrate.
26, according to arbitrary described stacked structure manufacture method in the claim 23 to 25, wherein said buffer film contains amorphous oxide.
27, according to arbitrary described stacked structure manufacture method in the claim 23 to 25, wherein contain Ta, Si and O compound, contain La, Sr, Mn and O as at least a buffer film that is used as in the compound of constituent and the lead glass as constituent.
28, according to arbitrary described stacked structure manufacture method in the claim 23 to 25, wherein said buffer film is placed on the whole mating surface between this glass substrate and another substrate.
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|---|---|---|---|
| JP084939/2004 | 2004-03-23 | ||
| JP2004084846A JP2005270727A (en) | 2004-03-23 | 2004-03-23 | Stack structure and its manufacturing method |
| JP084907/2004 | 2004-03-23 | ||
| JP084846/2004 | 2004-03-23 |
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| CN1774388A CN1774388A (en) | 2006-05-17 |
| CN100447073C true CN100447073C (en) | 2008-12-31 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4136075A1 (en) * | 1991-10-30 | 1993-05-06 | Siemens Ag, 8000 Muenchen, De | Anodic bonding of insulating and conductive discs to sandwich - involves using two hot plates for heating and applying pressure to minimise distortion and allow more than two discs to be bonded |
| US20020069960A1 (en) * | 2000-12-13 | 2002-06-13 | Applied Materials, Inc. | Anodic bonding of a stack of conductive and glass layers |
| WO2003082460A1 (en) * | 2002-03-29 | 2003-10-09 | Casio Computer Co., Ltd. | Chemical reaction apparatus and power supply system |
-
2004
- 2004-03-23 JP JP2004084846A patent/JP2005270727A/en active Pending
-
2005
- 2005-03-11 CN CNB2005800002932A patent/CN100447073C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4136075A1 (en) * | 1991-10-30 | 1993-05-06 | Siemens Ag, 8000 Muenchen, De | Anodic bonding of insulating and conductive discs to sandwich - involves using two hot plates for heating and applying pressure to minimise distortion and allow more than two discs to be bonded |
| US20020069960A1 (en) * | 2000-12-13 | 2002-06-13 | Applied Materials, Inc. | Anodic bonding of a stack of conductive and glass layers |
| WO2003082460A1 (en) * | 2002-03-29 | 2003-10-09 | Casio Computer Co., Ltd. | Chemical reaction apparatus and power supply system |
Non-Patent Citations (4)
| Title |
|---|
| Glass-to-glass anodic bonding with standard IC technology thhin films as intermediate layers. A. Berthold et al.Sensors and Actuators A,Vol.82 No.1-3. 2000 * |
| Glass-to-glass anodic bonding with standard IC technology thin films as intermediate layers. A. Berthold et al.Sensors and Actuators,Vol.82 No.1-3. 2000 * |
| Glass-to-glass anodic bonding with standard IC technologythhin films as intermediate layers. A. Berthold et al.Sensors and Actuators A,Vol.82 No.1-3. 2000 |
| Glass-to-glass anodic bonding with standard ICtechnology thin films as intermediate layers. A. Berthold et al.Sensors and Actuators,Vol.82 No.1-3. 2000 |
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