CN100446269C - Organic electroluminescent displaying devices - Google Patents
Organic electroluminescent displaying devices Download PDFInfo
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- CN100446269C CN100446269C CNB2004100455291A CN200410045529A CN100446269C CN 100446269 C CN100446269 C CN 100446269C CN B2004100455291 A CNB2004100455291 A CN B2004100455291A CN 200410045529 A CN200410045529 A CN 200410045529A CN 100446269 C CN100446269 C CN 100446269C
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- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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Abstract
The present invention relates to an organic electroluminescent display which comprises an active assembly array base board, an organic luminescent layer, a cathode layer and a conducting layer, wherein the active assembly array base board is provided with a light transmission area and an opacity area or a total opacity area; the organic luminescent layer is positioned on the active assembly array base board, and the cathode layer is positioned on the active assembly array base board and the organic luminescent layer; the conducting layer is distributed on the active assembly array base board, and contacts the cathode layer, wherein the conducting layer can select thickness which is larger than the thickness of the cathode layer or select resistance which is smaller than the resistance of the cathode layer, and thus, the transmission of current in the cathode layer is ensured. The area of the display which does not contact an anode is provided with a thick conducting layer by the present invention, and the conducting layer contacts the cathode layer. Thus, the current transmission at the cathode layer is in the charge of the conducting layer, and the present invention prevents the cathode layer from being burnt in a short time, ensures the transmission of the current in the display, and accordingly, is suitable for practicality.
Description
Technical field
The present invention relates to a kind of display of organic electroluminescence, particularly relate to a kind of display of organic electroluminescence of opening circuit can avoided.
Background technology
Along with high-tech growing, video product, particularly digitized video signal or device for image become in general daily life common product.In these digitized video signals or device for image, display is a significant components, to show relevant information.The user can read information by display, or and then the running of control device.
In order to cooperate modern life pattern, it is frivolous that the volume of video signal or device for image day by day is tending towards.Traditional cathode layer ray display though still have its advantage, need take large volume and power consumption.Therefore, cooperate photoelectric technology and semiconductor fabrication, the display of panel type has been developed into common display product, for example LCD or active organic light-emitting display at present.
The technology of LCD develops for many years, so difficulty has breakthrough.But the active organic light-emitting Display Technique is the new development technology, can become the main flow of display with LCD.The characteristic of the maximum of active (active matrix) display of organic electroluminescence is to utilize thin-film transistor (thin film transistor, be called for short TFT) technology driving organic electroluminescent, and directly be produced on drive IC on the panel, reach the demand that volume is compact and reduce cost, can be used on the small-medium size panels such as mobile phone, PDA, digital camera and handheld game device, Portable DVD player and vehicle navigation device, in the future even can be used in large size panel such as computer and flat-surface television etc.
Fig. 1 is the schematic top plan view that has known active system organic electroluminescent display now, and Fig. 2 is the generalized section of the active system organic electroluminescent display of II-II section among Fig. 1.Please consult Fig. 1 and shown in Figure 2 simultaneously, existing known display of organic electroluminescence 10 comprises base material 100, scan wiring 102, data wiring 104, polycrystalline SiTFT 106, pixel electrode 108, cap layer 110, organic luminous layer 112 and cathode layer 114.Data wiring 104 intermeshes 106 staggered places at scan wiring 102 and data wiring 104 of polycrystalline SiTFT with scan wiring 102.
Please continue to consult Figure 1 and Figure 2; the polycrystalline SiTFT 106 of display of organic electroluminescence 10 generally includes: island polysilicon 120, gate insulation layer (gate insulatingfilm) 122, gate 124, interlayer dielectric layer (inter-layer dielectric; be called for short ILD) 126 form with protective layer 128; wherein, island polysilicon layer 120 comprises channel region (channel region) 120a that is positioned under the gate 124 and the source/drain doped region 120b of channel region 120a both sides.And the configuration relation of above-mentioned each layer is that gate insulation layer 122 is between gate 124 and island polysilicon 120, and interlayer dielectric layer 126 covers on gate 124 and the gate insulation layer 122, wherein more comprises the source/drain contacting metal (source/drain contactmetal) 130 that links to each other with source/drain doped region 120b in the interlayer dielectric layer 126 of gate 124 both sides and gate insulation layer 122.128 of protective layers are to be positioned on the said modules.108 of pixel electrodes are electrical connected by opening in the protective layer 128 129 and source/drain contacting metal 130, and cap layer 110 is to cover on the substrate 100 and expose part pixel electrode 108.112 of organic luminous layers cover whole base plate 100, and cathode layer 114 is to cover on the organic luminous layer 112.
Yet, existing known display of organic electroluminescence is difficult especially with make progress light-emitting organic electroluminescent display or double-sided light emitting organic electroluminescence display in the making of cathode layer, because in order to take into account higher transparency, lower impedance and can not damage to some extent to organic luminous layer, so generally be to be coated with thin negative electrode, cathode layer 114 as shown in Figure 2.But so Bao cathode layer is for active large size panel, but might just burn at short notice because impedance is high.Another kind of way is to use the transparent cathode layer, makes assembly performance variation yet the resistance of transparent cathode layer is too high usually.
This shows that above-mentioned existing display of organic electroluminescence obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem that display of organic electroluminescence exists, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing display of organic electroluminescence exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of display of organic electroluminescence of new structure, can improve general existing display of organic electroluminescence, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that existing display of organic electroluminescence exists, and provide a kind of display of organic electroluminescence of new structure, technical problem to be solved is to make it can avoid cathode layer just to burn at short notice, and then can guarantee the transmission of electric current in the display, thereby be suitable for practicality more.
Another object of the present invention is to, a kind of display of organic electroluminescence is provided, technical problem to be solved is to make it can avoid cathode layer just to burn at short notice, and then can guarantee the transmission of electric current in the display of organic electroluminescence of polycrystalline SiTFT, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of display of organic electroluminescence according to the present invention's proposition, it is characterized in that this display of organic electroluminescence comprises: an active assembly array base plate, wherein said active assembly array base plate has a transmission region and a light tight zone, and comprise on the described active assembly array base plate and dispose many data wires, multi-strip scanning line, a plurality of thin-film transistor and a plurality of pixel electrode, wherein said data wire, scan line and thin-film transistor are to be positioned at light tight zone, and described pixel electrode is to be positioned at transmission region; One organic luminous layer is positioned on this active assembly array base plate; One cathode layer is positioned on this active assembly array base plate and this organic luminous layer; An and conductive layer, be distributed on the light tight zone of this active assembly array base plate and and contact with this cathode layer, wherein the impedance of this conductive layer is less than the impedance of this cathode layer, and described conductive layer is to be positioned at this data wire, this scan line and this thin-film transistor top in the zone at one of them place at least.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid display of organic electroluminescence, wherein said conductive layer comprises netted conductive layer.
Aforesaid display of organic electroluminescence, wherein said conductive layer is positioned on this cathode layer.
Aforesaid display of organic electroluminescence, wherein said cathode layer is positioned on this conductive layer.
Aforesaid display of organic electroluminescence, wherein said active assembly array base plate comprises an anode layer, this anode layer is positioned at the transmission region of described active assembly array base plate, and is positioned under this organic luminous layer.
Aforesaid display of organic electroluminescence, wherein said conductive layer and this anode layer are isolated.
Aforesaid display of organic electroluminescence, the material of wherein said anode layer comprise tin indium oxide, indium zinc oxide or tin indium oxide zinc.
Aforesaid display of organic electroluminescence, wherein said active assembly array base plate also comprises: a cap layer, cover described many data wires, described multi-strip scanning line and this thin-film transistor, and this cap layer exposes this pixel electrode of part in each picture element zone.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of display of organic electroluminescence, it comprises at least: an active assembly array base plate, an organic luminous layer, a cathode layer and a conductive layer, wherein active assembly array base plate has a transmission region and a light tight zone, or complete light tight zone.And organic luminous layer is positioned on the active assembly array base plate, and cathode layer then is positioned on active assembly array base plate and the organic luminous layer.Conductive layer is to be distributed on the active assembly array base plate and with cathode layer to contact, and wherein the thickness of conductive layer is greater than the thickness of cathode layer.
According to the described display of organic electroluminescence of embodiments of the present invention, above-mentioned organic luminous layer can be selected to be positioned on the whole active assembly array base plate, or in the zone that selection only exists in anode contacts.In addition, above-mentioned conductive layer and the position between cathode layer can be that conductive layer is positioned on the cathode layer or cathode layer is positioned on the conductive layer.
The present invention also proposes a kind of display of organic electroluminescence, it comprises at least: an active assembly array base plate, an organic luminous layer, a cathode layer and a conductive layer, wherein active assembly array base plate has a transmission region and a light tight zone, or complete light tight zone.And organic luminous layer is positioned on the active assembly array base plate, and cathode layer then is positioned on active assembly array base plate and the organic luminous layer.Conductive layer is to be distributed on the active assembly array base plate and with cathode layer to contact, and wherein the impedance of conductive layer is less than the impedance of cathode layer.
According to the described display of organic electroluminescence of embodiments of the present invention, above-mentioned organic luminous layer can be selected to be positioned on the whole active assembly array base plate, or in the zone that selection only exists in anode contacts.In addition, above-mentioned conductive layer and the position between cathode layer can be that conductive layer is positioned on the cathode layer or cathode layer is positioned on the conductive layer.And active assembly array base plate more comprises an anode layer, is positioned under this organic luminous layer.
The present invention is because at the non-of display and the thick conductive layer of anode contact area configuration one deck, and this conductive layer contacts with cathode layer, therefore the current delivery of cathode layer thus conductive layer be responsible for, and then can avoid cathode layer to burn at short notice, use the transmission of guaranteeing electric current in the display.In addition, if when the material of cathode layer and conductive layer is identical, then there is not the problem of tack.
Via as can be known above-mentioned, the invention relates to a kind of display of organic electroluminescence, it comprises an active assembly array base plate, an organic luminous layer, a cathode layer and a conductive layer, and wherein active assembly array base plate has a transmission region and a light tight zone or complete light tight zone.And organic luminous layer is positioned on the active assembly array base plate, and cathode layer then is positioned on active assembly array base plate and the organic luminous layer.Conductive layer is to be distributed on the active assembly array base plate and with cathode layer to contact, and wherein conductive layer can select thickness greater than the thickness of cathode layer or select the impedance of its impedance less than cathode layer.Thus, can guarantee the transmission of electric current in cathode layer.
By technique scheme, display of organic electroluminescence of the present invention has following advantage at least:
1, the non-and anode contact area of the present invention beyond anode region disposes a conductive layer, and wherein conductive layer can be selected the thickness of its thickness much larger than cathode layer, therefore can avoid the cathode layer of thin thickness to burn at short notice because of big electric current.
2, in addition, conductive layer also can be selected the impedance of its impedance less than cathode layer, therefore the current delivery of cathode layer thus conductive layer be responsible for, and then can lower the danger that cathode layer is as thin as a wafer burnt at short notice greatly, can guarantee the transmission of electric current in the display by this.
3 moreover, because conductive layer is avoided anode region, so can avoid conductive layer and pixel electrode to be short-circuited.
4, in addition, the material of cathode layer can be identical with the material of conductive layer, and can promote tack between the two.
In sum, the display of organic electroluminescence of special construction of the present invention can be avoided cathode layer just to burn at short notice, and then can guarantee the transmission of electric current in the display.The present invention can also avoid cathode layer just to burn at short notice, and then can guarantee the transmission of electric current in the display of organic electroluminescence of polycrystalline SiTFT.It has above-mentioned many advantages and practical value, and in like product, do not see have similar structural design to publish or use and really genus innovation, no matter it structurally or bigger improvement all arranged on the function, have large improvement technically, and produced handy and practical effect, and more existing display of organic electroluminescence has the multinomial effect of enhancement, thus be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the schematic top plan view that has known active system organic electroluminescent display now.
Fig. 2 is the generalized section of the active system organic electroluminescent display of II-II section among Fig. 1.
Fig. 3 A is the schematic top plan view according to the display of organic electroluminescence of first embodiment of the invention.
Fig. 3 B is the schematic top plan view according to the another kind of display of organic electroluminescence of first embodiment of the invention.
Fig. 3 C is the schematic top plan view according to another display of organic electroluminescence of first embodiment of the invention.
Fig. 4 A is the amplification schematic top plan view of the display of organic electroluminescence of IV part among Fig. 3 A.
Fig. 4 B is the generalized section of the display of organic electroluminescence of IV ' among Fig. 4 A-IV ' section.
Fig. 5 A is the part schematic top plan view according to the display of organic electroluminescence of second embodiment of the invention
Fig. 5 B is the generalized section of the display of organic electroluminescence of V-V section among Fig. 5 A.
Fig. 6 is the generalized section according to the display of organic electroluminescence of third embodiment of the invention.
10,30,50: display of organic electroluminescence 100,300: base material
102: scan wiring 104: the data distribution
106,306,506: thin-film transistor 108,308: pixel electrode
110,310: cap layer 112,312: organic luminous layer
114,314,614: cathode layer 120,320: island polysilicon
120a, 320c: channel region 120b: source/drain doped region
122,322,522: gate insulation layer 124,324,524: gate
126,326,526: interlayer dielectric layer 128,328: protective layer
130,330: source/drain contacting metal 129,329,529: opening
301a: resilient coating 301b: brake-pole dielectric layer
302,304: distribution 316a, 316b, 316c: conductive layer
318: picture element zone 319: transmission region
320a, 320b: source/drain doped region 520: channel layer
530a: source electrode 530b: drain
616a: conductive layer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of display of organic electroluminescence, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Structure of the present invention can be applied to various display of organic electroluminescence (organicelectroluminescence display, OELD), below will lift two kinds of display of organic electroluminescence and describe, yet it is not in order to limit the present invention as example.
First embodiment
Seeing also shown in Fig. 3 A, is the schematic top plan view according to the display of organic electroluminescence of first embodiment of the invention, and wherein the abridged partial component will be described later.The display of organic electroluminescence 30 of present embodiment, comprise and intermeshing and electrically isolated many distributions 302 and 304, thin-film transistor 306, pixel electrode 308, cap layer 310 and conductive layer 316a, wherein, pixel electrode 308 is as anode layer, its material for example comprise tin indium oxide (ITO), indium zinc oxide (IZO) or tin indium oxide zinc (indium-tin-zinc-oxide, ITZO).And the position of organic luminous layer in the present embodiment and cathode layer will be described at back segment.Constitute several picture element zones 318 at the staggered distribution 302 and 304 shown in this figure.306 of thin-film transistors are to be disposed in each picture element zone 318, and the thin-film transistor of present embodiment is a kind of polycrystalline SiTFT 306, and it comprises an island polysilicon layer 320, a gate 324 and source/drain contacting metal 330 at least.Wherein, 324 of gates are positioned on the island polysilicon layer 320 and with each scan wiring 302 and link to each other, and source/drain contacting metal 330 is to be positioned at gate 324 both sides, and wherein source/drain contacting metal 330 links to each other with each data distribution 304.In addition, also have the layer protective layer (not shown) to have an opening 329 and expose one of source/drain contacting metal 330, so as to be formed in each picture element zone 318 pixel electrode 308 by this opening 329 be electrical connected with thin-film transistor 306.Cap layer 310 then covers distribution 302,304 and thin-film transistor 306.And cap layer 310 exposes the part pixel electrode 308 in each picture element zone 318, to define a transmission region 319 (oblique line part); In addition, active assembly array base plate of the present invention (zone that promptly comprises base material, distribution 302,304, thin-film transistor 306, pixel electrode 308 and the cap layer 310 of present embodiment) also can be the complete light tight zone that is.And conductive layer 316a is disposed at transmission region 319 light tight zone (that is the zone at the conductive layer 316a place among Fig. 3 A) in addition, for example comprise netted conductive layer, and be distributed in as contacting on the distribution 302 and 304 and with the cathode layer (not shown), wherein the thickness of conductive layer 316a also can be selected the impedance of its impedance less than cathode layer much larger than the thickness or the conductive layer 316a of cathode layer.Moreover conductive layer 316a more can comprise on the thin-film transistor 306 that is disposed in each picture element zone 318.And, conductive layer 316a preferably and transmission region 319 segment distance is arranged, be short-circuited to avoid conductive layer 316a and pixel electrode 308.
In addition, the distribution kenel of conductive layer can also have various deformation, sees also shown in Fig. 3 B and Fig. 3 C, and it is respectively the schematic top plan view according to other kind display of organic electroluminescence of first embodiment of the invention.At first see also shown in Fig. 3 B, wherein each member all as shown in Figure 3A, the grid that difference only is to present netted conductive layer 316b is as a unit with per four picture element zones 318.In addition, see also shown in Fig. 3 C, wherein each member all as shown in Figure 3A, difference only is that the grid of conductive layer 316b is interconnected.In a word, though adopt the distributional pattern of above 3 kinds of conductive layers to describe among first embodiment, be not in order to qualification the present invention as legend, and as illustrative purposes only.
Please consult simultaneously shown in Fig. 4 A and Fig. 4 B, Fig. 4 A is the amplification schematic top plan view of the display of organic electroluminescence of IV part among Fig. 3 A, and Fig. 4 B is the generalized section of the display of organic electroluminescence of IV ' among Fig. 4 A-IV ' section.This display of organic electroluminescence 30, comprise base material 300, scan wiring 302, data wiring 304, polycrystalline SiTFT 306, pixel electrode 308, cap layer 310, organic luminous layer 312, cathode layer 314 and conductive layer 316a, wherein the material of cathode layer 314 comprises silver (Ag), aluminium (Al), calcium (Ca), lithium fluoride (LiF), magnesium silver alloy (MgAg alloy), tin indium oxide (IT0), indium zinc oxide (IZO) or tin indium oxide zinc (ITZO); The material of conductive layer 316a comprises titanium/aluminium/titanium (Ti/Al/Ti), molybdenum/aluminium/molybdenum (Mo/Al/Mo), molybdenum (Mo) or chromium (Cr), or all can with the identical or different person of material of cathode layer 314 or distribution 302,304.Especially when the material of conductive layer 316a and cathode layer 314 when being identical for example, then there is not the problem of tack.
Please continue to consult shown in Fig. 4 A and Fig. 4 B, scan wiring 302 and data wiring 304 are that cross-over configuration is on base material 300 and constitute several picture element zones 318 (asking for an interview Fig. 3 A).And be disposed at polycrystalline SiTFT 306 in each picture element zone except the island polysilicon layer 320 shown in Fig. 3 A, gate 324 and source/drain contacting metal 330, also comprise a gate insulation layer 322, an interlayer dielectric layer 326 and a protective layer 328.Wherein, an one source pole doped region 320a and a drain doped region 320b that island polysilicon layer 320 has a channel region 320c and lays respectively at channel region 320c both sides, gate insulation layer 322 is between gate 324 and island polysilicon layer 320,326 of interlayer dielectric layers are disposed on gate 324 and the gate insulation layer 322, and source/drain contacting metal 330 is the gate insulation layer 322 and interlayer dielectric layer 326 that are arranged in gate 324 both sides, and wherein source dopant zone 320a connects data distribution 304 by source/drain contacting metal 330.Protective layer 328 is to be positioned on interlayer dielectric layer 326 and the source/drain contacting metal 330, and wherein protective layer 326 has opening 329, so as pixel electrode 308 by this opening 329 link to each other with source/drain contacting metal 330.
Please continue to consult shown in Fig. 4 B, the organic luminous layer 312 in the display of organic electroluminescence 30 of present embodiment is to be positioned on the base material 300 and the pixel electrode 308 of the transmission region 319 that defined with cap layer 310 contacts.Wherein, on the pixel electrode 308 of organic luminous layer 312 in only being present in transmission region 319 as shown in this figure, can also for example be positioned on the whole base material 300 and cover cap layer 310 and the pixel electrode 308 that exposes.And cathode layer 314 is to be positioned on the base material 300 and with the organic luminous layer 312 of transmission region 319 to contact.Conductive layer 316a is disposed at cathode layer 314 belows in transmission region 319 (being anode layer) light tight zone in addition and is in contact with it, and wherein the thickness of conductive layer 316a can be greater than the thickness of cathode layer 314; For instance, when the thickness of cathode layer 314 is tens of to hundreds of dusts, then the thickness of conductive layer 316a is preferably than between big 1～100 times of the thickness of cathode layer 314, and promptly the thickness of conductive layer 316a is about thousands of dusts.In addition, conductive layer 316a can select the impedance of its impedance less than cathode layer 314, so that a large amount of electric current transmits therein.And can have one deck resilient coating 301a and the brake-pole dielectric layer 301b between resilient coating 301a and island polysilicon layer 320 between base material 300 and above-mentioned each layer usually.
Since the light tight area configurations of present embodiment beyond transmission region 319 one deck conductive layer 316a, and this conductive layer 316a contacts with cathode layer 314, therefore inciting somebody to action thus in the current delivery of cathode layer 314, conductive layer 316a is responsible for, and then can lower the danger that cathode layer 314 is as thin as a wafer burnt at short notice greatly, can guarantee the transmission of electric current in the display 30 by this.
Second embodiment
Please consult simultaneously shown in Fig. 5 A and Fig. 5 B, Fig. 5 A is the part schematic top plan view according to the display of organic electroluminescence of the second embodiment of the present invention, and Fig. 5 B is the generalized section of the display of organic electroluminescence of V-V section among Fig. 5 A.The display of organic electroluminescence 50 of present embodiment, it comprises: base material 300, scan wiring 302, data wiring 304, amorphous silicon film transistor 506, pixel electrode 308, cap layer 310, organic luminous layer 312, cathode layer 314 and conductive layer 316a.The present embodiment and the first embodiment difference are that thin-film transistor wherein is an amorphous silicon membrane transistor 506, and the configuration of all the other members and first embodiment are roughly the same.And amorphous silicon membrane transistor 506 comprises a gate 524, a channel layer 520, a gate insulation layer 522, one source pole 530a and a drain 530b and an interlayer dielectric layer 526, wherein gate 524 links to each other with scan wiring 302,520 of channel layers are positioned on the gate 524, and gate insulation layer 522 is between gate 524 and channel layer 520.Source electrode 530a and drain 530b then lay respectively on the channel layer 520 of gate 524 both sides, and source electrode 530a links to each other with data distribution 504.And interlayer dielectric layer 526 is to be positioned on the base material 300 to cover channel layer 520, source electrode 530a and drain 530b, and wherein interlayer dielectric layer 526 has an opening 529 and exposes drain 530b, so as pixel electrode 308 by this opening 529 link to each other with drain 530b.
The 3rd embodiment
Fig. 6 is the generalized section according to the display of organic electroluminescence of third embodiment of the invention, and wherein the partial component and first embodiment are identical, and difference will be described in detail at back segment.
Please consult simultaneously shown in Fig. 6, Fig. 4 A and Fig. 4 B, each layer of the display of organic electroluminescence 60 of present embodiment configuration and its material etc. are all similar to first embodiment.But, cathode layer 614 wherein is to be positioned on the base material 300 and to cover light tight zone beyond the transmission region 319, conductive layer 616a is disposed on the cathode layer 614 in transmission region 319 (being anode layer) light tight zone in addition, wherein the thickness of conductive layer 616a can be selected the impedance of its impedance less than cathode layer greater than the thickness or the conductive layer 316a of cathode layer 614, so that a large amount of electric current transmits therein.
Because the light tight area configurations one deck conductive layer 616a of present embodiment beyond its transmission region 319, and this conductive layer 616a contacts with cathode layer 614, therefore inciting somebody to action thus in the current delivery of cathode layer 614, conductive layer 616a is responsible for, and then can lower the danger that cathode layer 614 is as thin as a wafer burnt at short notice greatly, use the transmission of guaranteeing electric current in the display 60.In addition, the layout that conductive layer is disposed on the cathode layer in light tight zone also can be applicable among second embodiment (asking for an interview Fig. 5 B), does not repeat them here.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (11)
1, a kind of display of organic electroluminescence is characterized in that it comprises:
One active assembly array base plate, wherein said active assembly array base plate has a transmission region and a light tight zone, and comprise on the described active assembly array base plate and dispose many data wires, multi-strip scanning line, a plurality of thin-film transistor and a plurality of pixel electrode, wherein said data wire, scan line and thin-film transistor are to be positioned at light tight zone, and described pixel electrode is to be positioned at transmission region;
One organic luminous layer is positioned on this active assembly array base plate;
One cathode layer is positioned on this active assembly array base plate and this organic luminous layer; And
One conductive layer, be distributed on the light tight zone of this active assembly array base plate and and contact with this cathode layer, wherein the impedance of this conductive layer is less than the impedance of this cathode layer, and described conductive layer is to be positioned at this data wire, this scan line and this thin-film transistor top in the zone at one of them place at least.
2, display of organic electroluminescence according to claim 1 is characterized in that wherein said conductive layer comprises netted conductive layer.
3, display of organic electroluminescence according to claim 1 is characterized in that wherein said conductive layer is positioned on this cathode layer.
4, display of organic electroluminescence according to claim 1 is characterized in that wherein said cathode layer is positioned on this conductive layer.
5, display of organic electroluminescence according to claim 1 is characterized in that wherein said active assembly array base plate comprises an anode layer, and this anode layer is positioned at the transmission region of described active assembly array base plate, and is positioned under this organic luminous layer.
6, display of organic electroluminescence according to claim 5 is characterized in that the isolation of wherein said conductive layer and this anode layer.
7, display of organic electroluminescence according to claim 5 is characterized in that the material of wherein said anode layer comprises tin indium oxide, indium zinc oxide or tin indium oxide zinc.
8, display of organic electroluminescence according to claim 1 is characterized in that wherein said active assembly array base plate also comprises:
One cap layer covers described many data wires, described multi-strip scanning line and this thin-film transistor, and this cap layer exposes this pixel electrode of part in each picture element zone.
9, display of organic electroluminescence according to claim 1 is characterized in that wherein said conductive layer can not cover this pixel electrode.
10, display of organic electroluminescence according to claim 1, the thickness that it is characterized in that wherein said conductive layer are than the thick 1-100 of thickness of described cathode layer doubly.
11, display of organic electroluminescence according to claim 1 is characterized in that the material of wherein said conductive layer is identical with the material of described cathode layer, to promote tack between the two.
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| CNB2004100455291A CN100446269C (en) | 2004-05-28 | 2004-05-28 | Organic electroluminescent displaying devices |
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| CNB2004100455291A CN100446269C (en) | 2004-05-28 | 2004-05-28 | Organic electroluminescent displaying devices |
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| CN100446269C true CN100446269C (en) | 2008-12-24 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255774B1 (en) * | 1996-09-04 | 2001-07-03 | Cambridge Display Technology, Ltd. | Multilayer cathode for organic light-emitting device |
| US20010049153A1 (en) * | 1999-12-28 | 2001-12-06 | Nec Corp | Method for manufacturing organic electroluminescence display device |
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2004
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255774B1 (en) * | 1996-09-04 | 2001-07-03 | Cambridge Display Technology, Ltd. | Multilayer cathode for organic light-emitting device |
| US20010049153A1 (en) * | 1999-12-28 | 2001-12-06 | Nec Corp | Method for manufacturing organic electroluminescence display device |
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