CN100444700C - An organic EL part - Google Patents
An organic EL part Download PDFInfo
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- CN100444700C CN100444700C CNB2007101522634A CN200710152263A CN100444700C CN 100444700 C CN100444700 C CN 100444700C CN B2007101522634 A CNB2007101522634 A CN B2007101522634A CN 200710152263 A CN200710152263 A CN 200710152263A CN 100444700 C CN100444700 C CN 100444700C
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- electron injecting
- injecting layer
- electron injection
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Abstract
The utility model relates to an organic light emitting diode, comprising an electron injection layer between a cathode and an organic layer, which is characterized in that: the electron injection layer with thickness of 0.5nm to 0.7nm is provided with LiCoO2 material; the material of the electron injection layer can also be made from aluminum and LiCoO2 material. The utility model has the advantages of high efficiency of electron injection of the organic electroluminescent device from the cathode into the organic layer, low working voltage, high brightness and efficiency of the device, and long service life of parts.
Description
The application is an application number: 200510000284.5, and the applying date: on January 10th, 2005, title: the dividing an application of a kind of application for a patent for invention of organic electroluminescence device.
Technical field
The present invention relates to a kind of organic electroluminescence device, relate in particular to the electron injecting layer of organic electroluminescence device.
Background technology
In organic electroluminescence device, for reducing device operating voltage, the injection in balance electronic and hole.The injectability of electronics needs to improve.
Adopt low workfunction metal can effectively improve the injectability of electronics, but low workfunction metal is too active, easily reacts with water oxygen as negative electrode.
The another kind of method that improves the electronics injectability is to add the electron injecting layer that one deck inorganic compound is formed between negative electrode and organic layer, facts have proved that LiF/Al is the good cathode construction of a kind of electronics injectability, is widely used in the 0LED product.But the existence meeting of halogen atom is to luminous generation quencher.
Summary of the invention
The purpose of this invention is to provide the good electron injecting layer material of a kind of electronics injectability.
Technical scheme of the present invention is: a kind of organic electroluminescence device, one deck electron injecting layer is arranged between negative electrode and organic layer, and it is characterized in that electron injecting layer contains LiCoO
2Material, the thickness of described electron injecting layer are 0.5-0.7nm.
Another technical scheme of the present invention is: a kind of organic electroluminescence device is characterized in that described electron injecting layer material is by aluminium and LiCoO
2Material is formed.
The thickness of electron injecting layer is preferably 0.5-20nm.
The invention has the beneficial effects as follows: organic electroluminescence device injects the electron injection efficiency height of organic layer from negative electrode, and operating voltage is low, device brightness and efficient height, device lifetime are long.
Description of drawings
Fig. 1 is the layer structure of 0LED.
Fig. 2 is the bright voltage-contrast figure that rises of embodiment 1 and Comparative Examples 1.
Fig. 3 is the brightness-voltage-contrast figure of embodiment 1 and Comparative Examples 1.
Fig. 4 is the efficient-current density comparison diagram of embodiment 1 and Comparative Examples 1.
Fig. 5 is the life-span comparison diagram of embodiment 1 and Comparative Examples 1.
Embodiment
Electron injecting layer of the present invention is the layer between negative electrode and organic layer (for example luminescent layer, electron transfer layer).
As shown in Figure 1, existing that the composition and the Action Specification of each layer of pie graph 10LED device is as follows:
Substrate 101 is used for supporting other layer of 0LED device.
Send from anode 102 in the hole when switching on to device.
Hole injection layer 103 has the efficient of organic layer is injected the hole in raising from anode effect.
Hole transmission layer 104 has the effect of hole transport to luminescent layer 105.
Luminescent layer 105 provides the place of electronics and hole-recombination, and compound back is luminous.
Electron transfer layer 106 has the effect of electric transmission to organic layer.
Electronics sends from negative electrode 108 when switching on to device.
The function of above-mentioned each layer of 0LED device, material and preparation technology thereof are well known to those of ordinary skill in the art, do not give unnecessary details at this.
The electron injecting layer that above-mentioned material constituted that the present invention proposes can evaporation on luminescent layer 105 or electron transfer layer 106.Its thickness is preferably 0.5-20nm, and thickness is not easy to form the electron injecting layer film if be lower than 0.5nm, and thickness can reduce electronics again and inject effect if is higher than 20nm, but it should be understood that under other thickness and remain available.Co is the very important transition metal of a class as the group VIII element, and its outermost layer s electron number and internal layer d electron number sum are more than or equal to 8; Because the particularity of this electronic configuration causes the 8th family's metallic element to possess the characteristics of appraising at the current rate, therefore also make the 8th subgroup metallic element possess higher electronics injection and ducting capacity with the composite oxides of alkali metal and alkaline-earth metal.
What will be understood by those skilled in the art that is: the embodiment of the layer structure of 0LED shown in Figure 1 is preferred, does not adopt hole injection layer 103, hole transmission layer 104 and electron transfer layer 106 also can produce device.Thought of the present invention is to add one deck LiCoO between negative electrode and the organic layer
2The electron injecting layer that material is formed.Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description and accompanying drawing, for example adopt the device architecture of top outgoing also to be fine, be to be understood that, under the guiding of the present invention's design, those skilled in the art can carry out various modifications and improvement, and claims have been summarized scope of the present invention.
Embodiment 1:
ITO/CuPc(15nm)/NPB(60nm)/TADN(40nm)/Alq3(10nm)/LiCoO
2(0.7nm)/Al(150nm)
(1) is carved with the cleaning of the glass substrate of ITO in advance: utilize the ultrasonic and ultrasonic method of deionized water of the washing agent of heat that the transparent conduction base sheet ito glass is cleaned, place it in oven dry under the infrared lamp after the cleaning, ito glass to oven dry carries out the preliminary treatment that UV ozone is cleaned and the low energy oxygen ion beam bombards then, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 50 Ω, and thickness is 150nm;
(2) preparation of organic luminous layer: place in the vacuum chamber with above-mentioned cleaning, drying and through pretreated ito glass, be evacuated to 1 * 10
-3Pa, the CuPc film of evaporation 15nm, evaporation speed is 0.05nm/s, evaporation one deck hole mobile material NPB on above-mentioned CuPc film then, the evaporation speed of material film is 0.3nm/s, thickness is 60nm; On hole transmission layer, the TADN that evaporation 40nm is thick makees luminescent layer, and 10nmAlq3 does electron transfer layer.
(3) preparation of electron injecting layer:
The LiCoO2 that evaporation 0.7nm is thick behind electron transfer layer is as the electron injecting layer of device, and this layer evaporation speed is 0.04nm/s.
(4) preparation of negative electrode:
Negative electrode is made up of the thick Al film of 150nm in this luminescent device, and Al layer evaporation speed is 0.2nm/s.
(5) with the encapsulation of glass packaging sheet.
Comparative Examples 1:
ITO/CuPc(15nm)/NPB(60nm)/TADN(40nm)/Alq3(10nm)/LiF(0.7nm)/Al(150nm)
Preparation process is the LiF of evaporation 0.7nm behind electron transfer layer as embodiment 1.
Comparative Examples 2:
ITO/CuPc(15nm)/NPB(60nm)/Alq3(30nm):C545T[1％]/Alq3(20nm)/LiF(0.5nm)/A1(150nm)
Preparation process is with reference to embodiment 1.
Embodiment 3:
ITO/CuPc(15nm)/NPB(60nm)/Alq3(40nm)/Al(20nm):LiCoO2[10％]/Al(120nm)
Al (20nm): LiCoO2[10%] preparation:
The method of using double source to steam altogether, preparation thickness is Al, the LiCoO2 mixed electronic implanted layer of 20nm, and this layer evaporation speed is 0.1nm/s, and the LiCoO2 doping content is controlled to be 10%.
Other preparation process is with reference to embodiment 1.
The LiCoO2 device of the LiF device of Comparative Examples 1 and embodiment 1 is 1cd/m in brightness as seen from Figure 2
2The time voltage be respectively 3.67v and 3.55v.
Depress in same electrical as seen from Figure 3, the brightness of the LiCoO2 device of embodiment 1 is higher than the brightness of the LiF device of Comparative Examples 1.
The LiCoO of embodiment 1 as seen from Figure 4
2The efficient of device is higher than the brightness of the LiF device of Comparative Examples 1.
The LiCoO of embodiment 1 as seen from Figure 5
2The life-span of device is higher than the brightness of the LiF device of Comparative Examples 1.
| Device | Emission wavelength | Efficient (5mA/cm 2) | Life-span (1000nit) |
| |
520nm | 12.1cd/A | 5000 hours |
| Comparative Examples 2 | 520nm | 11.5cd/A | 4000 hours |
From last table, as can be known, see the LiCoO of embodiment 3
2: the efficient of Al device, life-span are better than efficient, the life-span of Comparative Examples 2LiF device.
Claims (3)
1, a kind of organic electroluminescence device has one deck electron injecting layer between negative electrode and organic layer, it is characterized in that electron injecting layer contains LiCoO
2Material, the thickness of described electron injecting layer are 0.5-0.7nm.
2, a kind of organic electroluminescence device is characterized in that described electron injecting layer is by aluminium and LiCoO
2Material is formed.
3, organic electroluminescence device as claimed in claim 2, the thickness that it is characterized in that described electron injecting layer is 0.5-20nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101522634A CN100444700C (en) | 2005-01-10 | 2005-01-10 | An organic EL part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101522634A CN100444700C (en) | 2005-01-10 | 2005-01-10 | An organic EL part |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100002845A Division CN100454603C (en) | 2005-01-10 | 2005-01-10 | Organic electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101128077A CN101128077A (en) | 2008-02-20 |
| CN100444700C true CN100444700C (en) | 2008-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101522634A Expired - Fee Related CN100444700C (en) | 2005-01-10 | 2005-01-10 | An organic EL part |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343572A (en) * | 2001-03-14 | 2002-11-29 | Canon Inc | Light-emitting element and display device employing porphyrin derivative compound |
| CN1505449A (en) * | 2002-10-28 | 2004-06-16 | �����ձ������ƶ���ʾ��ʽ���� | Organic electroluminescence device |
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2005
- 2005-01-10 CN CNB2007101522634A patent/CN100444700C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343572A (en) * | 2001-03-14 | 2002-11-29 | Canon Inc | Light-emitting element and display device employing porphyrin derivative compound |
| US6835471B2 (en) * | 2001-03-14 | 2004-12-28 | Canon Kabushiki Kaisha | Light emitting device and display unit which make use of porphyrin derivative compound |
| CN1505449A (en) * | 2002-10-28 | 2004-06-16 | �����ձ������ƶ���ʾ��ʽ���� | Organic electroluminescence device |
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|---|---|
| CN101128077A (en) | 2008-02-20 |
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Address after: Beijing, Haidian District on the East Road, No. 1 hospital building on the first floor of the ring Co-patentee after: Weixinnuo Science and Technology Co., Ltd., Beijing Address before: Rainbow Building, No. 11, information road, Beijing, Haidian District Co-patentee before: Weixinnuo Science and Technology Co., Ltd., Beijing |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081217 Termination date: 20180110 |
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| CF01 | Termination of patent right due to non-payment of annual fee |