CN100444016C - photonic crystal frequency conversion device - Google Patents
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- CN100444016C CN100444016C CNB2004100091191A CN200410009119A CN100444016C CN 100444016 C CN100444016 C CN 100444016C CN B2004100091191 A CNB2004100091191 A CN B2004100091191A CN 200410009119 A CN200410009119 A CN 200410009119A CN 100444016 C CN100444016 C CN 100444016C
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- 238000007737 ion beam deposition Methods 0.000 claims abstract description 3
- 238000001259 photo etching Methods 0.000 claims abstract description 3
- 238000012545 processing Methods 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000035939 shock Effects 0.000 claims description 12
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
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- 239000010703 silicon Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
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- 239000004408 titanium dioxide Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
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Abstract
The photonic crystal can be a one-dimensional photonic crystal and a two-dimensional photonic crystal, the one-dimensional photonic crystal is composed of a substrate and a medium film layer, the medium film layer is formed by alternately arranging materials with high refractive index and low refractive index and is distributed in a periodic structure, the medium film layer is manufactured on the substrate by the techniques of an ion beam deposition method, a vacuum magnetron sputtering method, hot pressing, sol-gel, a chemical vapor deposition method, a vacuum evaporation method and the like, and the material and the thickness of the film layer can be selected according to the required bands of incident light waves and variable frequency light waves; the two-dimensional photonic crystal is formed by a high-low refractive index material in an air column or medium column structure, the air column or medium column forms a periodic unit with a lattice structure such as a triangle, a square, a honeycomb, a checkerboard, a compound grid and the like, and is manufactured by adopting micro-processing technologies such as photoetching, dry etching and the like, photoelectrochemical corrosion and the like, and the lattice constant, the cylinder diameter and the cylinder height of the two-dimensional photonic crystal can be selected according to the required bands of incident light waves and frequency conversion light waves. The invention has the advantages of no dependence on incident light intensity, high conversion efficiency, large conversion range and the like.
Description
Technical field
The present invention relates to a kind of photonic crystal converter plant that is used for laser frequency.
Background technology
The laser frequency technology has important use and is worth and wide application prospect in Optoelectronic Countermeasure Technology, national defence scientific research and industrial circles such as modern new pattern laser weapon, laser ACM active countermeasures, lasing safety.
Existing laser frequency technology is mainly utilized the nonlinear characteristic of inorganic crystal material such as BBO, KDP, ADP, CDA etc., adopts traditional methods such as frequency multiplication, difference frequency, mixing and parametric oscillation to realize frequency conversion.And there are many shortcomings in this traditional converter technique: the higher incident intensity of (1) needs causes that the nonlinear effect of material could realize frequency inverted, causes experimental cost increase, difficulty to increase; (2) frequency inverted is subjected to the restriction of conditions such as the position is complementary, and conversion efficiency is not high; (3) adopt methods such as frequency multiplication, difference frequency, parametric oscillation to realize frequency inverted, not only need two to multi-beam, and the experimental provision complexity, cause energy loss serious, the output light frequency scope that is produced simultaneously is directly relevant with the incident light frequency, causes frequency inverted to be limited in scope.
And realize laser frequency research also being in the fundamental research stage at present based on some non-linear organic compounds and macromolecular material, there are inherent defects such as low thermal stability, machining property is poor, the anti-damage threshold of optics is low in organic material simultaneously.
Photonic crystal is the material that the enough modes that is similar to the semiconductor operating electronic of a kind of energy are handled photon, is called as the semiconductor of light.These new ideas were almost proposed by Yablonovitch and John simultaneously in 1987.Photonic crystal is the periodic structure that the materials arranged in alternating by differing dielectric constant constitutes, when electromagnetic wave is propagated therein, the light wave dispersion curve structure that becomes band, the electromagnetic wave that " forbidden photon band " that occurs being similar to the semiconductor forbidden band between band and the band, frequency drop in the forbidden band is forbidden propagating by strictness.Thereby the motion of light in photonic crystal by the optical band gap structure control.Photonic crystal is under modulation such as external shock wave, electric field, magnetic field, temperature, and its grating constant, specific inductive capacity will change, and cause its bandgap center position and width to change, and become a kind of dynamic photon crystal.
The E.J.Reed of masschusetts, u.s.a Polytechnics, M.Soljacic, with J.D.Joannopoulos first at Phys.Rev.Lett, 90, May, 2003:203904 have delivered the theoretical analysis that utilizes shock wave modulation 1-D photon crystal to realize frequency translation, the high-q cavity theoretical model has been proposed, by the effect of shock wave wavefront, make the high-q cavity compression, cause the incident light frequency inverted.The same year is at Phys.Rev.Lett, and 91, September, 2003:133901 have delivered the theoretical model that utilizes anti-Doppler effect to realize the incident light frequency inverted.But these two pieces of documents are mainly studied the theoretical model analysis of 1-D photon crystal frequency conversion, do not relate to the shock wave dynamic modulation and realize that frequency conversion is to problems the such as how requirement of photon crystal structure, material, making and shock wave produce.Simultaneously, present domestic and international other research groups that do not appear in the newspapers carry out the research work of this respect.
Summary of the invention
Technology of the present invention is dealt with problems and is: realize the existing problem of frequency inverted at above-mentioned nonlinear effect based on material, a kind of photonic crystal converter plant that does not rely on advantages such as incident intensity, conversion efficiency height and conversion range are big that has is provided.
One of technical solution of the present invention is: the photonic crystal converter plant, constitute 1-D photon crystal by substrate and media coating, wherein media coating is alternately arranged by high low-index material and is the periodic structure distribution, the material of described media coating is silicon or silicon dioxide or gallium arsenide or tellurium or zinc sulphide or germanium or zinc telluridse or aluminium oxide or titanium dioxide, or the organic synthesis material.
The grating constant of described 1-D photon crystal and specific inductive capacity change with the shock wave modulation.Described media coating is made on substrate by technology such as ion beam deposition method, vacuum magnetic-control sputtering method, hot pressing, sol-gel, chemical vapour deposition technique, vacuum vapor deposition methods and is obtained.Film material and thickness can be selected according to desired incident light wave and frequency conversion light-wave band,
Two of technical solution of the present invention is: the photonic crystal converter plant, be air column or the distribution of medium column type periodic structure by high low-index material, constitute the two dimensional crystal converter plant, described high low-index material is silicon or silicon dioxide or gallium arsenide or tellurium or zinc sulphide or germanium or zinc telluridse or aluminium oxide or titanium dioxide, or the organic synthesis material.
The grating constant of described 2 D photon crystal and specific inductive capacity change with the shock wave modulation.Cycle unit such as described air column or medium cylindricality triangularity, square, honeycombed, tessellate, compound grid.Adopt Micrometer-Nanometer Processing Technology, photoelectrochemical etching fabrication techniques such as photoetching and dry etching.
The present invention has compared following advantage with the conventional laser converter technique:
(1) do not rely on incident intensity.The key of photonic crystal converter technique is to utilize the shock wave modulation, realizes the change of photonic crystal internal wave forbidden photon band position, front interface both sides and width.Frequency inverted does not also rely on incident intensity.
(2) conversion efficiency height.Incident light enters forbidden band frequency growth simultaneously in localization at the interface by adiabatic conversion of continuous absorption phonon.Be transformed into the forbidden band coboundary, just in time be positioned at the forbidden band of modulated back photonic crystal, reflected fully, realize effective conversion.
(3) conversion range is big.Frequency inverted scope key depends on the photonic crystal band width, realizes the wide range of frequencies conversion by design, making large band gap photonic crystal.
(4) only need the single-frequency incident light.
Description of drawings
Fig. 1 is the one-dimensional crystal photon structure synoptic diagram of one of technical solution of the present invention;
Fig. 2 is the photonic crystal band structure synoptic diagram of one of technical solution of the present invention;
Fig. 3 is two a two-dimensional photon crystal structure synoptic diagram of technical solution of the present invention;
Fig. 4 is a photonic crystal frequency conversion system synoptic diagram of the present invention.
Embodiment
As shown in Figure 1, one of technical scheme of the present invention is the 1-D photon crystal that is made of converter plant substrate and media coating, and media coating is alternately arranged by high low-index material and is the periodic structure distribution.The refractive index of two kinds of materials is respectively n among Fig. 1
1, n
2, suppose n
1＞n
2, the thickness of two kinds of materials is respectively h
1, h
2, grating constant is a, a=h
1+ h
2The film material of 1-D photon crystal and thickness can be selected according to desired incident light wave and frequency conversion light-wave band.Film material must be transparent for incident and frequency conversion light wave, and thicknesses of layers is h
1+ h
2Must be complementary with lambda1-wavelength.Generally speaking, thicknesses of layers approximates 1/3 of lambda1-wavelength.Manufacturing materials can be silicon, silicon dioxide, gallium arsenide, tellurium, zinc sulphide, germanium, zinc telluridse, aluminium oxide, titanium dioxide and organic synthesis material.
The selection of photon crystal material of the present invention is according to following condition: (1) is to the transmitance height of incident and frequency conversion light wave; (2) absorption of shock wave and scattering are little, and resonant coefficient is big; (3) refringence of high low-index material is big.
Embodiment 1, is that 1064nm is an example with the lambda1-wavelength, can select GaAs and SiO
2Two kinds of materials, refractive index is respectively n
1=3.37 and n
2=1.54, and meet above-mentioned condition.The thickness of two kinds of materials is respectively GaAs, h
1=99.4nm, SiO
2, h
2=211.1nm.
Embodiment 3, are that 532nm is an example with the lambda1-wavelength, can select TeO
2And SiO
2Two kinds of materials, refractive index is respectively n
1=2.26 and n
2=1.54, and meet above-mentioned condition.The thickness of two kinds of materials is respectively TeO
2, h
1=64.58nm, SiO
2, h
2=98.92nm.
As shown in Figure 2, be 1-D photon crystal band structure of the present invention.Horizontal ordinate is the high symmetric points of photonic crystal Brillouin zone among the figure, and ordinate is the frequency of photonic crystal band structure correspondence.Grid regions among the figure is the forbidden band district, and pairing ordinate is the forbidden band frequency range, promptly can not propagate at photonic crystal when the incident light frequency is arranged in the forbidden band frequency range; Clear area among the figure is the conduction band district, and pairing ordinate is the conduction band frequency range, and the incident light that promptly is arranged in the conduction band frequency range can be propagated at photonic crystal.
As shown in Figure 3, be two-dimensional photon crystal structure synoptic diagram of the present invention.(1) when being air column type structure, the high refractive index medium material, refractive index is n
1And air, refractive index is n
2Form the periodic unit of triangular lattice structure.Can also constitute the periodic unit of crystalline networks such as square, honeycombed, tessellate, compound grid in addition.(2) when being medium type structure, high low-index material distributes just opposite, n
2Be high refractive index medium material, n
1Be air.Distance among the figure between the center of circle and the center of circle is grating constant a, and body diameter is 2r, and the cylinder height is d.The grating constant of 2 D photon crystal, cylinder height can be selected according to desired incident light wave and frequency conversion light-wave band.At first, the high-index material of making 2 D photon crystal must be transparent for incident and frequency conversion light wave.Generally speaking, the grating constant a of 2 D photon crystal approximates 1/2 of lambda1-wavelength.For air column type structure, cylinder height d approximates 1/2 of lambda1-wavelength, and for medium type structure, cylinder height d approximates 2 times of lambda1-wavelength.
Manufacturing materials can be silicon, silicon dioxide, gallium arsenide, tellurium, zinc sulphide, germanium, zinc telluridse, aluminium oxide, titanium dioxide and organic synthesis material.
Embodiment 4, are that 10.6 μ m are example with lambda1-wavelength, can select high index of refraction Ge to constitute triangular lattice air column type photonic crystal, and refractive index is respectively n
1=4.0 and n
2=1.0, grating constant a=5.63 μ m, air column diameter 2r=5.51 μ m, the air column height is d=5.3 μ m.
Embodiment 5, are that 5.0 μ m are example with lambda1-wavelength, can select high index of refraction Si to constitute triangular lattice air column type photonic crystal, and refractive index is respectively n
1=3.4 and n
2=1.0, grating constant a=2.44 μ m, air column diameter 2r=2.33 μ m, the air column height is d=2.5 μ m.
Embodiment 6, are that 4.0 μ m are example with lambda1-wavelength, can select high index of refraction Si to constitute honeycombed patterned media column type photonic crystal, and refractive index is respectively n
1=1.0 and n
2=3.4, grating constant a=2.24 μ m, medium column diameter 2r=1.08 μ m, medium post height is d=8.0 μ m.
Fig. 4 is a photonic crystal frequency conversion system synoptic diagram.The black square district is one dimension or 2 D photon crystal sample among the figure, and incident light wave and shock wave are coupled to the sample from the sample above-below direction respectively.
Claims (7)
1, photonic crystal converter plant, it is characterized in that: constitute 1-D photon crystal by substrate and media coating, wherein media coating is alternately arranged by high low-index material and is the periodic structure distribution, the high low-index material of described media coating is silicon or silicon dioxide or gallium arsenide or tellurium or zinc sulphide or germanium or zinc telluridse or aluminium oxide or titanium dioxide, or the organic synthesis material.
2, photonic crystal converter plant according to claim 1 is characterized in that: the grating constant of described 1-D photon crystal and specific inductive capacity change with the shock wave modulation.
3, photonic crystal converter plant according to claim 1 is characterized in that: described media coating is made on substrate by ion beam deposition method or vacuum magnetic-control sputtering method or hot pressing or sol-gel or chemical vapour deposition technique or vacuum evaporation law technology and is obtained.
4, photonic crystal converter plant, it is characterized in that: be air column or the distribution of medium column type periodic structure by high low-index material, constitute the two dimensional crystal converter plant, described high low-index material is silicon or silicon dioxide or gallium arsenide or tellurium or zinc sulphide or germanium or zinc telluridse or aluminium oxide or titanium dioxide, or the organic synthesis material.
5, photonic crystal converter plant according to claim 4 is characterized in that: the grating constant of described 2 D photon crystal and specific inductive capacity change with the shock wave modulation.
6, photonic crystal converter plant according to claim 4 is characterized in that: the periodic unit of described air column or medium cylindricality triangularity or square or honeycombed or tessellate or compound grid crystalline network.
7, photonic crystal converter plant according to claim 4 is characterized in that: described air column or medium column type structure adopt photoetching, dry etching Micrometer-Nanometer Processing Technology or photoelectrochemical etching fabrication techniques.
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| CNB2004100091191A CN100444016C (en) | 2004-05-24 | 2004-05-24 | photonic crystal frequency conversion device |
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|---|---|---|---|
| CNB2004100091191A CN100444016C (en) | 2004-05-24 | 2004-05-24 | photonic crystal frequency conversion device |
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| CN100444016C true CN100444016C (en) | 2008-12-17 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105113006A (en) * | 2015-09-21 | 2015-12-02 | 陕西科技大学 | Mono-dispersed spherical zinc sulfide photonic crystal with rough surface and preparation method thereof |
| CN107315222B (en) * | 2017-06-01 | 2024-02-02 | 深圳凌波近场科技有限公司 | surface wave photonic crystal |
| CN117141073B (en) * | 2023-10-31 | 2024-02-02 | 中国科学技术大学先进技术研究院 | Infrared stealth multilayer film and preparation method thereof |
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|---|---|---|---|---|
| WO1998026316A1 (en) * | 1996-12-13 | 1998-06-18 | Massachusetts Institute Of Technology | Tunable microcavity using nonlinear materials in a photonic crystal |
| WO1998057207A1 (en) * | 1997-06-09 | 1998-12-17 | Massachusetts Institute Of Technology | High efficiency channel drop filter with absorption induced on/off switching and modulation |
| CN1288275A (en) * | 2000-10-11 | 2001-03-21 | 南京大学 | Biperiod superlattice and its application in laser frequency converter |
| EP1255136A2 (en) * | 2001-04-30 | 2002-11-06 | Agilent Technologies, Inc. | Phototonic crystal waveguide tunable by a resonant stub |
| WO2003025661A1 (en) * | 2001-09-19 | 2003-03-27 | Universiteit Van Amsterdam | Photonic crystal switch |
| EP1341010A2 (en) * | 2002-02-27 | 2003-09-03 | Agilent Technologies, Inc. | Continuously tunable photonic crystal drop filter |
| WO2003091775A1 (en) * | 2002-04-25 | 2003-11-06 | Massachusetts Institute Of Technology | Optimal bistable switching in non-linear photonic crystals |
| WO2004015452A2 (en) * | 2002-08-09 | 2004-02-19 | Energy Convertion Devices, Inc. | Photonic crystals and devices having tunability and switchability |
| US20040080726A1 (en) * | 2002-10-11 | 2004-04-29 | Wonjoo Suh | Photonic crystal reflectors/filters and displacement sensing applications |
-
2004
- 2004-05-24 CN CNB2004100091191A patent/CN100444016C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998026316A1 (en) * | 1996-12-13 | 1998-06-18 | Massachusetts Institute Of Technology | Tunable microcavity using nonlinear materials in a photonic crystal |
| WO1998057207A1 (en) * | 1997-06-09 | 1998-12-17 | Massachusetts Institute Of Technology | High efficiency channel drop filter with absorption induced on/off switching and modulation |
| CN1288275A (en) * | 2000-10-11 | 2001-03-21 | 南京大学 | Biperiod superlattice and its application in laser frequency converter |
| EP1255136A2 (en) * | 2001-04-30 | 2002-11-06 | Agilent Technologies, Inc. | Phototonic crystal waveguide tunable by a resonant stub |
| WO2003025661A1 (en) * | 2001-09-19 | 2003-03-27 | Universiteit Van Amsterdam | Photonic crystal switch |
| EP1341010A2 (en) * | 2002-02-27 | 2003-09-03 | Agilent Technologies, Inc. | Continuously tunable photonic crystal drop filter |
| WO2003091775A1 (en) * | 2002-04-25 | 2003-11-06 | Massachusetts Institute Of Technology | Optimal bistable switching in non-linear photonic crystals |
| WO2004015452A2 (en) * | 2002-08-09 | 2004-02-19 | Energy Convertion Devices, Inc. | Photonic crystals and devices having tunability and switchability |
| US20040080726A1 (en) * | 2002-10-11 | 2004-04-29 | Wonjoo Suh | Photonic crystal reflectors/filters and displacement sensing applications |
Non-Patent Citations (5)
| Title |
|---|
| Color of shock waves in photonic crystals. JOHN D. Joannopoulos et al.PHYSICAL REVIEW LETTERS,Vol.90 No.20. 2003 * |
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