CN100440725C - 功率放大器 - Google Patents

功率放大器 Download PDF

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Publication number
CN100440725C
CN100440725C CNB038124270A CN03812427A CN100440725C CN 100440725 C CN100440725 C CN 100440725C CN B038124270 A CNB038124270 A CN B038124270A CN 03812427 A CN03812427 A CN 03812427A CN 100440725 C CN100440725 C CN 100440725C
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output
driver
level
stage
input
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CN1656672A (zh
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P·-O·布兰德特
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Telefonaktiebolaget LM Ericsson AB
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0233—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier

Abstract

一种控制具有驱动器级和输出级的功率放大器的输出功率的方法。测量驱动器电流并根据所测得的驱动器电流对输出级偏置。

Description

功率放大器
技术领域
本发明涉及功率放大器。
背景技术
在GSM等系统中，发射器的发送方式中的输出功率由功率放大器(PA)控制。通常，通过控制由功率放大器抽取的电流来控制功率放大器。该电流与输出功率成比例。或者，可以调节其它与输出功率成比例的参数。
通过感应提供给功率放大器的电流，并将其馈送给误差信号放大器用以反馈给功率放大器的控制输入，可以改变功率放大器的偏置从而调整功率放大器的输出。通常，可以在反馈环路中使用滤波器以便限制引入系统中的噪声量。
然而，功率放大器的典型传递函数或其增益(控制信号与电流消耗或输出功率之比)不是恒定的。当天线发生不匹配时，功率放大器上的负载变化。这也意味着对于给定的电压驻波比(VSWR)水平，输出功率误差变得更大。如上所述，通常调整提供给功率放大器的DC电流，但是这意味着只有PA的输出处的负载恒定时才能得知功率输出和DC电流之间的关系。当天线的负载变化时，在高VSWR下对于不同相位PA的输出功率有不同变化。例如，如果对功率输出没有其它限制，在VSWR为8∶1时，不同相位下输出功率可能变化+/-9dB之多。P＝I2RL/2可以证明事实如此，其中在VSWR为8∶1时项RL实际从6.25ohms变化到400ohms。因此，如果需要更好的控制，必须用与输出功率或反射功率有关的信息来代替提供给功率放大器的总DC功率。
发明内容
因此，希望获得在负载变化时对输出功率的改进的控制。这对于在频带中VSWR从1∶1变化到5∶1的天线的频带很窄的情况尤其需要。
根据本发明，提供了一种控制功率放大器的功率输出的方法，该方法包括：测量提供给功率放大器的驱动器级的DC电流，并根据所测得的DC驱动器电流向功率放大器的驱动器级和输出级提供偏置控制信号。
需要强调的是，虽然本说明书中使用的术语“包括”指明所述的特征、整数、步骤或部件，但是并不排除增加一个或多个另外的特征、整数、步骤或部件或其组合。
附图说明
图1示出了体现本发明的功率放大器电路的框图。
图2示出了从图1的电路输出的电流和输出信号。
具体实施方式
图1的框图示出了体现本发明的功率放大器电路。该电路包括RF输入2，RF输入2通过驱动器级12和RF匹配级16连接到功率放大器的输出级10。PA输出级10的输出连接到RF负载14(通常是天线)。在本发明的一个实施例中，DC电流检测器20用于检测提供给驱动器级12和输出级10的DC电流。电流检测器20由电池21供电。DC电流检测器20产生等于Idriver+K*Ioutput的输出信号以提供给调整器22。下面讨论K值的选择。调整器22接收参考电流输入24并将其与DC电流检测器20的输出结合以产生提供给偏置控制信号单元26的信号。偏置控制信号单元26向驱动器级12和输出级10提供偏置信号。这些偏置信号(分别是28和30)分别用于偏置驱动器级12和输出级10的输入。
驱动器级12的输出通过RF匹配电路16连接到输出级10的输入。该匹配电路目的在于将输出级输入的低阻抗与驱动器级的输出处的高负载阻抗匹配。理想的是应当选择该匹配电路具有零度相移，或者有这样的相移：使得输出级的输出处的高欧姆负载转移到驱动器级输出处的低欧姆负载。
通常，输出晶体管是反相元件并且较低的电流摆动(高欧姆负载下)向来自发射极电感的输入产生较低的同相反馈电压。输出处的较高的电压摆动通过在输出级的基极和发射极之间的电容降低阻抗。反馈路径都工作在相同的方向，使得高欧姆负载在输入处转化成低欧姆负载，反之亦然。
如果输出晶体管的输入和驱动器级的输出之间的匹配网络取得零度相移，则输出晶体管处的高欧姆负载转化为驱动器级处的低欧姆负载。这意味着对于输出级处的高欧姆负载，如果驱动器的DC电流和输出级的DC电流之和是常数，那么驱动器的DC电流将增加且输出级的DC电流将减小。然后，输出功率将会增加，直至电压极限、摆动值或直至驱动器中的电流密度限制最大电流消耗，或者直至总DC电流达到小VSWR的DC电流。由于在高VSWR下输出级的增益甚至可能是负的，所以这种情况是非常戏剧性的。
因此，在本发明的实施例中，使用驱动器级电流来调整(偏置)输出级和驱动器级，如上所述。
图2示出了当负载变化时驱动器电流可以是比总电流更好的用于控制输出功率的变量。图2a示出了驱动器级和输出级电流，同时图2b示出了输出功率变化。
理想地，驱动器级和输出级都应当工作在饱和模式下。
输出Idriver+K*Ioutput的DC电流检测器应当使得K的选择使输出级的输出功率变成理想的直线。K通常根据很多因素被选择，这些因素有例如输出级的增益以及放大器的各种不同级的效率。

Claims (7)

1、一种功率放大器，包括：
驱动器级，具有接收RF输入信号的输入，以及用于提供驱动器信号的输出；
连接在驱动器级的输出和输出级的输入之间的RF匹配级；
输出级，具有用于接收驱动器信号的输入，以及用于提供RF输出信号的输出；以及
偏置控制单元，用于测量提供给驱动器级的电流以从其中产生测得的驱动器电流值，并且根据所测得的驱动器电流值向输出级提供偏置信号。
2、权利要求1的放大器，其中偏置控制单元测量提供给输出级的电流，从而从其中产生测得的输出电流值，并且根据所测得的驱动器电流值和所测得的输出电流值向输出级提供偏置信号。
3、权利要求1或2的放大器，其中偏置控制单元根据所测得的驱动器电流值向驱动器级施加偏置信号。
4、权利要求2的放大器，其中偏置控制单元根据所测得的驱动器电流和根据所测得的输出电流值向驱动器级提供偏置信号。
5、权利要求3的放大器，其中RF匹配级在驱动器级的输出和输出级的输入之间产生基本为0°的相移。
6、权利要求5的放大器，其中RF匹配级产生的相移使得输出级的输出处的高欧姆负载转化为驱动器级处的低欧姆负载。
7、一种控制功率放大器的输出功率的方法，该功率放大器具有用于接收射频输入的驱动器级，用于施加射频输出信号的输出级，和连接在驱动器级的输出和输出级的输入之间的RF匹配级，该方法包括测量驱动器电流并且根据所测得的驱动器电流偏置输出级。
CNB038124270A 2002-05-31 2003-05-19 功率放大器 Expired - Fee Related CN100440725C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP02253860A EP1367710B1 (en) 2002-05-31 2002-05-31 Power amplifiers
EP02253860.7 2002-05-31
US38817202P 2002-06-11 2002-06-11
US60/388,172 2002-06-11

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CN1656672A CN1656672A (zh) 2005-08-17
CN100440725C true CN100440725C (zh) 2008-12-03

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US (1) US7268618B2 (zh)
EP (2) EP1367710B1 (zh)
JP (1) JP4343831B2 (zh)
KR (1) KR100998101B1 (zh)
CN (1) CN100440725C (zh)
AT (1) ATE385625T1 (zh)
AU (1) AU2003227754A1 (zh)
DE (1) DE60224922D1 (zh)
WO (1) WO2003103109A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145385B2 (en) 2003-12-05 2006-12-05 Telefonaktiebolaget Lm Ericsson (Publ) Single chip power amplifier and envelope modulator
US7808312B2 (en) * 2008-10-31 2010-10-05 Micro Mobio Corporation Broadband RF linear amplifier
JP5858281B2 (ja) * 2011-12-21 2016-02-10 株式会社村田製作所 半導体装置
US9806405B2 (en) * 2013-01-31 2017-10-31 Atmel Corporation Integrated circuit for remote keyless entry system
US9379669B2 (en) 2014-05-14 2016-06-28 Telefonaktiebolaget Lm Ericsson (Publ) Method for class-B amplifier mismatch correction
CN116346050A (zh) * 2023-05-24 2023-06-27 广州慧智微电子股份有限公司 一种功率放大器系统和放大器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924191A (en) * 1989-04-18 1990-05-08 Erbtec Engineering, Inc. Amplifier having digital bias control apparatus
CN1117774A (zh) * 1993-12-13 1996-02-28 摩托罗拉公司 适合用于无线电话的放大器
US5532648A (en) * 1991-12-30 1996-07-02 Harris Corporation Radio frequency amplifiers with compensation signal to accommodate changes in the conduction point due to temperature changes
US5673001A (en) * 1995-06-07 1997-09-30 Motorola, Inc. Method and apparatus for amplifying a signal
US6008698A (en) * 1998-05-18 1999-12-28 Omnipoint Corporation Amplifier with dynamically adaptable supply current
US20010020270A1 (en) * 1998-06-29 2001-09-06 Minerva M. Yeung Fragile watermarking for objects

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442407A (en) * 1982-06-11 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Two loop automatic level control for power amplifier
US4547746A (en) * 1984-04-09 1985-10-15 Rockwell International Corporation VSWR Tolerant linear power amplifier
JPH08501197A (ja) * 1993-03-26 1996-02-06 クァルコム・インコーポレーテッド 電力増幅器バイアス制御回路および方法
DE19834209C1 (de) * 1998-07-29 2000-04-20 Siemens Ag Verstärkerausgangsstufe
JP4014072B2 (ja) * 2000-03-31 2007-11-28 株式会社ルネサステクノロジ 電力増幅器モジュール
US6831517B1 (en) * 2002-12-23 2004-12-14 Intersil Americas, Inc. Bias-management system and method for programmable RF power amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924191A (en) * 1989-04-18 1990-05-08 Erbtec Engineering, Inc. Amplifier having digital bias control apparatus
US5532648A (en) * 1991-12-30 1996-07-02 Harris Corporation Radio frequency amplifiers with compensation signal to accommodate changes in the conduction point due to temperature changes
CN1117774A (zh) * 1993-12-13 1996-02-28 摩托罗拉公司 适合用于无线电话的放大器
US5673001A (en) * 1995-06-07 1997-09-30 Motorola, Inc. Method and apparatus for amplifying a signal
US6008698A (en) * 1998-05-18 1999-12-28 Omnipoint Corporation Amplifier with dynamically adaptable supply current
US20010020270A1 (en) * 1998-06-29 2001-09-06 Minerva M. Yeung Fragile watermarking for objects

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JP4343831B2 (ja) 2009-10-14
KR100998101B1 (ko) 2010-12-02
AU2003227754A8 (en) 2003-12-19
WO2003103109A3 (en) 2004-05-21
JP2005528835A (ja) 2005-09-22
AU2003227754A1 (en) 2003-12-19
US20050212601A1 (en) 2005-09-29
EP1367710A1 (en) 2003-12-03
US7268618B2 (en) 2007-09-11
EP1523794A2 (en) 2005-04-20
WO2003103109A2 (en) 2003-12-11
DE60224922D1 (de) 2008-03-20
CN1656672A (zh) 2005-08-17
KR20050007571A (ko) 2005-01-19
ATE385625T1 (de) 2008-02-15
EP1367710B1 (en) 2008-02-06

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