CN100440447C - Method of making inclined-planes used in semiconductor preparing process - Google Patents
Method of making inclined-planes used in semiconductor preparing process Download PDFInfo
- Publication number
- CN100440447C CN100440447C CNB2004100785709A CN200410078570A CN100440447C CN 100440447 C CN100440447 C CN 100440447C CN B2004100785709 A CNB2004100785709 A CN B2004100785709A CN 200410078570 A CN200410078570 A CN 200410078570A CN 100440447 C CN100440447 C CN 100440447C
- Authority
- CN
- China
- Prior art keywords
- degree
- etching
- planes
- semiconductor substrate
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000005530 etching Methods 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000013078 crystal Substances 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 10
- 239000010432 diamond Substances 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 5
- 230000002146 bilateral effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Weting (AREA)
Abstract
The present invention relates to a method for fabricating a bevel, which is applied to a semiconductor preparation process. The present invention comprises the following steps: a semiconductor substrate of a diamond crystal structure is provided, and the semiconductor substrate has a surface which is a (100) or (110) equivalent crystal surface; the upper part of the surface of the semiconductor substrate is formed with an etching mask, an etching window is arranged on the etching mask, wherein the etching window has a side wall which extends in a first direction, and a deviation angle is kept between the first direction and the (100) or (110) equivalent crystal surface of the semiconductor substrate; the range of the deviation angle is greater than or equal to 0 DEG and smaller than 45 DEG or smaller than or equal to 90 DEG but is greater than 45 DEG; the etching mask and the etching window are used for carrying out selectivity aeolotropism etching on the substrate so as to etch out a bevel, the surface of which is the (110) or (100) equivalent crystal surface, on the surface of the substrate in the first direction. The present invention can greatly enhance flatness and overcome the restriction of a silicon wafer in a crystal direction.
Description
Technical field
The present invention is a kind of method of making inclined-planes, and finger is applied to the method for making inclined-planes in the semiconductor preparing process especially.
Background technology
Be the single LASER Light Source encapsulating structure schematic diagram that utilizes reflecting surface in the known technology in the traditional optical read/write head shown in Fig. 1 (a) and 1 (b), Fig. 1 (b) is along the cutaway view of A-A ' line among Fig. 1 (a).In Fig. 1 (b), silicon substrate 100 is provided with laser diode 102 and optical receiver 103, and the laser 104 that laser diode 102 sent reflexes to top camera lens (not shown) via one 45 degree inclined-planes 101.Have the step that the silicon substrate of structure like this can be removed extra assembling microprism (Microprism) from, effectively save step of preparation process and cost.
Find out that by last figure must form one 45 degree inclined-plane 101 and can finish said structure on above-mentioned silicon substrate 100, this 45 degree inclined-plane 101 can be used as optical reflection face required in the various photoelectric subassembly.And Fig. 2 (a) demonstrates the surface of end face in the known technology and presses after the direction shown in the dotted line cuts for the crystal bar 200 of (100) equivalent crystal planes, can produce a surface and be the silicon wafer 201 of (100) equivalent crystal planes (shown in Fig. 2 (b)), and form an etching mask (not shown) again in the surface of silicon wafer 201 by existing technology, has at least one etching window 299 on this etching mask, this etching window 299 has a sidewall 298, and existing technology is with this sidewall 298 and this substrate＜100〉deviation angle in 297 in equivalent crystal orientation painstakingly is controlled at 45 and spends, thus, behind an anisotropic etching (for example etching of potassium hydroxide etch solution), inclined-planes 101 are spent for 45 of (110) equivalent crystal planes in the surface that can obtain shown in Fig. 2 (c).But, showing that through actual fabrication the surface flatness on the 45 degree inclined-planes of being finished in above-mentioned existing mode 101 is not good, surface average roughness (average surface roughness) is usually about 200 nanometers.
And because the surface roughness of optical reflection face can cause the incident scattering of light, in order not influence the image quality after reverberation incides the subsequent optical assembly, surface roughness need be lower than uses 1/10th of wavelength.The light source of optical communication utilization is contained part visible light and infrared band; Aspect the light storage, under the situation along with the neither disconnected raising of packing density of light storing technology, the laser that laser diode 102 is sent, its wavelength is shorter and shorter, therefore on these are used, the 45 degree inclined-planes 101 of surface average roughness about 200 nanometers can't satisfy the requirement of follow-up laser for the reflecting surface roughness, and investigate the not good main cause of its surface roughness, mainly be to occur because said method can bring out the small plane of crystalline phase more stable (111) equivalent crystal planes in a large number on the surface on 45 degree inclined-planes 101, cause the reflecting surface flatness to decline to a great extent, this type of relevant discussion can be consulted among Sensors and Actuators A 48 (1995) 229-238, the Silicon anisortropic etching in KOH-isopropanoletchant paper content that IrenaBarycka and Irena Zubel are shown, the present invention repeats no more.
In addition, when anisotropic etching (for example etching of potassium hydroxide etch solution) is carried out for the silicon wafer 201 (shown in Fig. 2 (b)) of (100) equivalent crystal planes in the surface, inclined-planes 199 are spent for 54.74 of (111) equivalent crystal planes in the surface that also can obtain shown in Fig. 2 (d), and because the surperficial crystalline phase state of (111) equivalent crystal planes is comparatively stable, so flatness significantly improves.
So, someone finds out the shortcoming that following method attempts to improve the above-mentioned practice, show as Fig. 3 (a), its be with end face surface for the crystal bar 300 of (100) equivalent crystal planes press the direction shown in the dotted line when cutting after, can produce the silicon wafer 301 (shown in Fig. 3 (b)) that has 9.74 degree angles between the crystal orientation of the crystal orientation on a surface and (100) equivalent crystal planes, and then form an etching mask (not shown) in the surface of silicon wafer 301, has at least one etching window 399 on this etching mask, this etching window 399 has a sidewall 398, with this sidewall 398 and this substrate＜100〉equivalent crystal orientation 397 deviation angles are controlled at about 0 degree, thus, behind an anisotropic etching (for example etching of potassium hydroxide etch solution), the surface that can obtain shown in Fig. 3 (c) is the 45 degree inclined-planes 101 that (111) equivalent crystal planes and flatness significantly improve, itself and substrate surface 390 folders 45 degree, but 380 on another inclined-plane can and 390 folders of substrate surface, one 64.4 degree angles.
Therefore, can know by last figure and to find out that this preparation technology needs especially with oblique angle 9.74 degree cutting crystal bars, and is different with general patterning method, must order especially, and can can't behind etching preparation technology, obtain two orthogonal 45 degree inclined-planes of normal vector simultaneously because of the crystal orientation of silicon wafer itself.
Summary of the invention
Therefore, main purpose of the present invention is to provide preparation technology's method, and it can significantly improve flatness and reach making bilateral 45 degree inclined-planes with overcoming the restriction in silicon wafer crystal orientation.
The present invention is a kind of method of making inclined-planes, is applied on the semiconductor preparation technology, and its manufacture method comprises the following step: the Semiconductor substrate of a diamond crystal structures is provided, and this Semiconductor substrate has a surface, and this surface is (100) equivalent crystal planes; This surface in this Semiconductor substrate forms an etching mask, has an etching window on this etching mask, this etching window has a sidewall that extends along a first direction, and this first direction and this Semiconductor substrate＜having a deviation angle between 100〉equivalent crystal orientation, the scope of this deviation angle is more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than 45 degree; And use this etching mask and this etching window that this substrate is carried out a selective anisotropic etching (selected anisotropic etching), and then on this substrate surface, etch the surperficial inclined-plane of (110) equivalent crystal planes that is along this first direction.
According to above-mentioned conception, wherein the Semiconductor substrate of this diamond crystal structures can be-silicon substrate, and this selective anisotropic is etched to a wet etching.
According to above-mentioned conception, wherein the angle on this substrate surface and this inclined-plane is controlled at 45 degree+/-1 when spending, the scope of this deviation angle then needs more than or equal to 22 degree and less than 45 degree or smaller or equal to 68 degree but greater than 45 degree.
According to above-mentioned conception, wherein this inclined-plane is an optical reflection face by utilization.
According to above-mentioned conception, wherein the employed etching solution of this anisotropic etching can be in potassium hydroxide: water: isopropyl alcohol forms according to required etch-rate ratio is mixed, the temperature of the employed etching solution of this anisotropic etching can be heated to 60 degree Celsius to the scope of 95 degree, and this anisotropic etching needs when carrying out with an agitating device the continuous disturbance of employed this anisotropic etching solution, and the bubble that produces in order to avoid in the heating process is attached on this inclined-plane and influences the flatness on this inclined-plane.
Another aspect of the present invention is a kind of method of making inclined-planes, be applied on the semiconductor preparation technology, its manufacture method comprises the following step: the Semiconductor substrate of a diamond crystal structures is provided, and this Semiconductor substrate has a surface, and this surface is (110) equivalent crystal planes; This surface in this Semiconductor substrate forms an etching mask, has an etching window on this etching mask, this etching window has a sidewall that extends along a first direction, and this first direction and this Semiconductor substrate＜having a deviation angle between 110〉equivalent crystal orientation, the scope of this deviation angle is more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than 45 degree; And use this etching mask and this etching window that this substrate is carried out a selective anisotropic etching, and then on this substrate surface, etch the surperficial inclined-plane of (100) equivalent crystal planes that is along this first direction.
According to above-mentioned conception, method of making inclined-planes of the present invention, wherein the Semiconductor substrate of this diamond crystal structures can be a silicon substrate.
According to above-mentioned conception, method of making inclined-planes of the present invention, wherein this selective anisotropic etching can be a wet etching.
According to above-mentioned conception, method of making inclined-planes of the present invention wherein is controlled at the angle on this substrate surface and this inclined-plane 45 degree+/-1 when spending, and the scope of this deviation angle then needs more than or equal to 22 degree and less than 45 degree or smaller or equal to 68 degree but greater than 45 degree.
According to above-mentioned conception, method of making inclined-planes of the present invention, wherein this inclined-plane is an optical reflection face by utilization.
According to above-mentioned conception, method of making inclined-planes of the present invention, wherein the employed etching solution of this anisotropic etching can be in potassium hydroxide: water: isopropyl alcohol forms according to required etch-rate ratio is mixed.
According to above-mentioned conception, method of making inclined-planes of the present invention, wherein the temperature of the employed etching solution of this anisotropic etching can be heated to 60 degree Celsius to the scope of 95 degree.
According to above-mentioned conception, method of making inclined-planes of the present invention, need when wherein this anisotropic etching carries out with an agitating device the continuous disturbance of employed this anisotropic etching solution, the bubble that produces in order to avoid in the heating process is attached on this inclined-plane and influences the flatness on this inclined-plane.
Method of making inclined-planes of the present invention can significantly improve flatness and reach making bilateral 45 degree inclined-planes with overcoming the restriction in silicon wafer crystal orientation, (Micro-Eelectro-MechanicalSystem is MEMS) in the manufacturing in semiconductor preparing process and photovoltaic applications field to can be applicable to MEMS (micro electro mechanical system).
Description of drawings
It shown in Fig. 1 (a) and 1 (b) the single LASER Light Source encapsulating structure schematic diagram that utilizes reflecting surface in the known technology in the traditional optical read/write head.
Fig. 2 (a), 2 (b), 2 (c) and 2 (d) show the process schematic diagram that forms one 45 degree inclined-planes and 54.74 degree inclined-planes in the known technology.
Fig. 3 (a), 3 (b) and 3 (c) show the process schematic diagram that forms one 45 degree inclined-planes in another known technology.
Fig. 4 (a), 4 (b) and 4 (c), it develops out the method for making inclined-planes process schematic diagram that can be applicable to semiconductor preparing process for the present invention for the above-mentioned prior art of improvement.
Fig. 5 (a), 5 (b) and 5 (c), it develops out another method of making inclined-planes process schematic diagram that can be applicable to semiconductor preparing process for the present invention for the above-mentioned prior art of improvement.
Fig. 6 (a) and 6 (b), it is the above-mentioned existing double inclined plane manufacture method process schematic diagram that can be applicable to semiconductor preparing process that develops out of improvement for the present invention.
Wherein, description of reference numerals is as follows:
100 silicon substrates, 102 laser diodes
103 optical receivers, 104 laser
101 45 degree inclined-planes, 200 crystal bars
201 silicon wafers, 299 etching windows
298 sidewalls 297＜100〉equivalent crystal orientation
199 54.74 degree inclined-planes, 101 45 degree inclined-planes
300 crystal bars, 301 silicon wafers
399 etching windows, 398 sidewalls
397＜100〉equivalent crystal orientation 390 substrate surfaces
380 inclined-planes, 500 Semiconductor substrate
530 etching masks, 540,541,548,549 etching windows
549 sidewalls, 550 inclined-planes
Embodiment
Though this patent can be applicable to the various devices of using the optical reflection face such as optical communication and optics storage, saves as the application that example illustrates this patent at this with optics.
See also Fig. 4 (a), 4 (b) and 4 (c), it develops out the method for making inclined-planes that can be applicable to semiconductor preparing process for the present invention for the above-mentioned prior art of improvement, at first, provide a surface to be the Semiconductor substrate 500 of (100) crystal face earlier, the semiconductor material of diamond lattic structures such as these Semiconductor substrate 500 available silicon is finished, and then form an etching mask 530 in the surface of this Semiconductor substrate 500, utilize a photomask through pattern transfer and carry out dry ecthing and form an etching window 540 on this etching mask 530, this etching window 540 has along the sidewall 549 of a first direction D-D ' and E-E ' extension, and this first direction D-D ' and this substrate＜having a deviation angle between 100〉equivalent crystal orientation, the small plane that this deviation angle avoids using 45 degree to avoid bringing out in a large number comparatively stable (111) crystal face of crystalline phase state occurs and the phenomenon that causes the reflecting surface flatness to decline to a great extent.Therefore the scope of deviation angle is adjusted into can be more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than 45 degree in the present invention, and in this example, this deviation angle is made as 22 balanced degree of effect.And then utilize this selective anisotropic etching (selectedanisotropic etching) mode to place an anisotropic etching solution to carry out wet etching this silicon wafer 500, wherein the composition of this anisotropic etching solution can be in potassium hydroxide: water: isopropyl alcohol forms according to required etch-rate ratio is mixed.And in etching process, the temperature of this anisotropic etching solution can be heated to 60 degree Celsius to the scope of 95 degree, in addition, must be during etching with agitating device with the continuous disturbance of this anisotropic etching solution, the bubble that its purpose is to avoid in the heating process and is produced is attached on the formed special angle inclined-plane and influences the flatness on this inclined-plane.
Fig. 4 (b) and Fig. 4 (c) are that Semiconductor substrate 500 among Fig. 4 (a) is respectively along the cutaway view of D-D ' and E-E ' line.Among Fig. 4 (b), etching solution utilizes etching window 540 respectively to form the structure on an inclined-plane 550 in both sides, and this inclined-plane 550 is positioned on (110) equivalent crystal planes on these Semiconductor substrate 500 surfaces, and presss from both sides miter angle with (100) equivalent crystal planes.In addition in Fig. 4 (c), etching solution also utilizes etching window 540 respectively to form the structure on an inclined-plane 550 in both sides, this inclined-plane 550 also is positioned on (110) equivalent crystal planes for the Semiconductor substrate 500 of (110) equivalent crystal planes of surface, and presss from both sides miter angle with (100) equivalent crystal planes.
In like manner, Fig. 5 (b) is to have had the Semiconductor substrate 500 of an etching window 541 behind anisotropic etching among Fig. 5 (a) with Fig. 5 (c), respectively along the cutaway view of G-G ' and F-F ' line, wherein this etching window 541 and Semiconductor substrate 500＜100〉equivalent crystal orientation deviation angle is 68 degree.In Fig. 5 (b), etching solution utilizes etching window 541 each structure on formation inclined-plane 550, both sides, and this inclined-plane 550 is positioned on (110) equivalent crystal planes on these Semiconductor substrate 500 surfaces, and presss from both sides miter angle with (100) equivalent crystal planes.In Fig. 5 (c), this etching window 541 respectively forms the structures on inclined-plane 550 in both sides in addition, and this inclined-plane 550 is positioned on (110) equivalent crystal planes on these Semiconductor substrate 500 surfaces, and presss from both sides miter angle with (100) equivalent crystal planes.
From the above, major technique of the present invention is characterised in that still uses modal surface to be the Semiconductor substrate of (100) equivalent crystal planes, but avoids using the deviation angles of 45 degree to avoid bringing out in a large number that comparatively stable (111) equivalent crystal planes of crystalline phase state occurs and the phenomenon that causes the reflecting surface flatness to decline to a great extent.Therefore, the present invention only to need to propose deviation angle is adjusted to and can be more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than 45 degree, just can effectively improve the flatness that the back reflection face is finished in etching.And wherein deviation angle is more near 0 degree or 90 when spending, and formed reflecting surface flatness is good more, but this inclined-plane 550 is big more with the error on required 45 degree inclined-planes.Otherwise, when deviation angle is spent near 45 more, though formed inclined-plane 550 is less with the error on required 45 degree inclined-planes.But formed reflecting surface flatness is relatively poor, so do as can be known according to real, desire is controlled at 45 degree+/-1 when spending with the angle on this substrate surface and this inclined-plane, and the scope of this deviation angle then needs more than or equal to 22 degree and less than 45 degree or smaller or equal to 68 degree but greater than 45 degree.
In addition, the material of this etching mask 530 can be silicon dioxide (SiO
2) or silicon nitride (Si
3N
4) one of them, so the available hydrogen fluoric acid comes this etching mask of flush away.And this semiconductor substrate surface also can be used (110) equivalent crystal planes instead, but this moment this first direction just will be adjusted into and this Semiconductor substrate＜have one between 110〉equivalent crystal orientation more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than the deviation angles of 45 degree, the surface on the inclined-plane that etches then is one (100) equivalent crystal planes.The relevant practice and Fig. 4 (a), 4 (b) and 4 (c) and Fig. 5 (a), 5 (b) and 5 (c) must not have too different, can be considered the change of equivalence, therefore repeat no more.
See also Fig. 6 (a) and 6 (b) again, it is provided with the Semiconductor substrate 500 of both direction according to the set etching window 548,549 of notion of the present invention for flat shape, (100) on these Semiconductor substrate 500 surfaces or (110) or equivalent crystal planes, and etching solution utilizes etching window 548,549 each structure on formation inclined-plane 550, both sides, thus, the present invention bilateral 45 degree inclined-planes that flatness significantly improves of can producing once out, and then improve the defective of prior art.
In sum; the present invention can be applied to MEMS (micro electro mechanical system) (Micro-Eelectro-MechanicalSystem; MEMS) in the manufacturing in semiconductor preparing process and photovoltaic applications field; though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those of ordinary skill in the art, without departing from the spirit and scope of the present invention; can do various changes and retouching, so protection scope of the present invention defines and is as the criterion when looking claim.
Claims (10)
1. a method of making inclined-planes is applied on the semiconductor preparation technology, and its manufacture method comprises the following step:
The Semiconductor substrate of one diamond crystal structures is provided, and this Semiconductor substrate has a surface, and this surface is (100) equivalent crystal planes;
This surface in this Semiconductor substrate forms an etching mask, has an etching window on this etching mask, this etching window has a sidewall that extends along a first direction, and this first direction and this Semiconductor substrate＜having a deviation angle between 100〉equivalent crystal orientation, the scope of this deviation angle is more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than 45 degree; And
Use this etching mask and this etching window that this substrate is carried out a selective anisotropic etching, and then on this substrate surface, etch the surperficial inclined-plane of (110) equivalent crystal planes that is along this first direction.
2. method of making inclined-planes as claimed in claim 1, the Semiconductor substrate that it is characterized in that this diamond crystal structures is a silicon substrate, this selective anisotropic is etched to a wet etching.
3. method of making inclined-planes as claimed in claim 1 is characterized in that angle with this substrate surface and this inclined-plane is controlled at 45 degree+/-1 when spending, and the scope of this deviation angle is more than or equal to 22 degree and less than 45 degree or smaller or equal to 68 degree but greater than 45 degree.
4. method of making inclined-planes as claimed in claim 1 is characterized in that this inclined-plane is an optical reflection face by utilization.
5. method of making inclined-planes as claimed in claim 1, it is characterized in that the employed etching solution of this anisotropic etching is in potassium hydroxide: water: isopropyl alcohol forms according to required etch-rate ratio is mixed, the temperature of the employed etching solution of this anisotropic etching is heated to 60 degree Celsius to the scope of 95 degree, and this anisotropic etching needs when carrying out with an agitating device the continuous disturbance of employed this anisotropic etching solution, and the bubble that produces in order to avoid in the heating process is attached on this inclined-plane and influences the flatness on this inclined-plane.
6. a method of making inclined-planes is applied on the semiconductor preparation technology, and its manufacture method comprises the following step:
The Semiconductor substrate of one diamond crystal structures is provided, and this Semiconductor substrate has a surface, and this surface is (110) equivalent crystal planes;
This surface in this Semiconductor substrate forms an etching mask, has an etching window on this etching mask, this etching window has a sidewall that extends along a first direction, and this first direction and this Semiconductor substrate＜having a deviation angle between 110〉equivalent crystal orientation, the scope of this deviation angle is more than or equal to 0 degree and less than 45 degree or smaller or equal to 90 degree but greater than 45 degree; And
Use this etching mask and this etching window that this substrate is carried out a selective anisotropic etching, and then on this substrate surface, etch the surperficial inclined-plane of (100) equivalent crystal planes that is along this first direction.
7. method of making inclined-planes as claimed in claim 6, the Semiconductor substrate that it is characterized in that this diamond crystal structures is a silicon substrate, this selective anisotropic is etched to a wet etching.
8. method of making inclined-planes as claimed in claim 6 is characterized in that angle with this substrate surface and this inclined-plane is controlled at 45 degree+/-1 when spending, and the scope of this deviation angle is more than or equal to 22 degree and less than 45 degree or smaller or equal to 68 degree but greater than 45 degree.
9. method of making inclined-planes as claimed in claim 6 is characterized in that this inclined-plane is an optical reflection face by utilization.
10. method of making inclined-planes as claimed in claim 6, it is characterized in that the employed etching solution of this anisotropic etching is in potassium hydroxide: water: isopropyl alcohol forms according to required etch-rate ratio is mixed, the temperature of the employed etching solution of this anisotropic etching is heated to 60 degree Celsius to the scope of 95 degree, and this anisotropic etching needs when carrying out with an agitating device the continuous disturbance of employed this anisotropic etching solution, and the bubble that produces in order to avoid in the heating process is attached on this inclined-plane and influences the flatness on this inclined-plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100785709A CN100440447C (en) | 2004-09-15 | 2004-09-15 | Method of making inclined-planes used in semiconductor preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100785709A CN100440447C (en) | 2004-09-15 | 2004-09-15 | Method of making inclined-planes used in semiconductor preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1606136A CN1606136A (en) | 2005-04-13 |
| CN100440447C true CN100440447C (en) | 2008-12-03 |
Family
ID=34765499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100785709A Active CN100440447C (en) | 2004-09-15 | 2004-09-15 | Method of making inclined-planes used in semiconductor preparing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100440447C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010062009B4 (en) * | 2010-11-26 | 2019-07-04 | Robert Bosch Gmbh | Method for producing inclined surfaces in a substrate and wafer with inclined surface |
| CN106990461B (en) * | 2016-01-20 | 2020-05-15 | 安徽中科米微电子技术有限公司 | Silicon echelle grating with right angle and vertex angle and manufacturing method thereof |
| CN106986299B (en) * | 2016-01-20 | 2021-03-09 | 安徽中科米微电子技术有限公司 | Optical right-angle reflector and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194328A (en) * | 1984-10-16 | 1986-05-13 | Oki Electric Ind Co Ltd | Etching method |
| US5441600A (en) * | 1993-07-09 | 1995-08-15 | Boston University | Methods for anisotropic etching of (100) silicon |
| CN1447990A (en) * | 2000-07-18 | 2003-10-08 | 索尼株式会社 | Semiconductor light-emitting device and method for mfg. semiconductor light-emitting device |
-
2004
- 2004-09-15 CN CNB2004100785709A patent/CN100440447C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194328A (en) * | 1984-10-16 | 1986-05-13 | Oki Electric Ind Co Ltd | Etching method |
| US5441600A (en) * | 1993-07-09 | 1995-08-15 | Boston University | Methods for anisotropic etching of (100) silicon |
| CN1447990A (en) * | 2000-07-18 | 2003-10-08 | 索尼株式会社 | Semiconductor light-emitting device and method for mfg. semiconductor light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1606136A (en) | 2005-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10393826B2 (en) | Extended signal paths in microfabricated sensors | |
| US7349140B2 (en) | Triple alignment substrate method and structure for packaging devices | |
| US7031566B2 (en) | Spectral filter for green and shorter wavelengths | |
| JP3352057B2 (en) | Manufacturing method of micro optical member | |
| Xu et al. | Formation of ultra-smooth 45 micromirror on (1 0 0) silicon with low concentration TMAH and surfactant: techniques for enlarging the truly 45 portion | |
| TWI489160B (en) | Inverted 45 degree mirror for photonic integrated circuits | |
| CN103018852A (en) | Optical element module and manufacturing method thereof | |
| CN101738668B (en) | Polarizing cube and method of fabricating the same | |
| EP2019081B1 (en) | Boron doped shell for MEMS device | |
| CN108897089A (en) | Broadband reflective half-wave plate and preparation method thereof based on silicon nano brick array | |
| CN101876725A (en) | Method for forming substrate with periodic structure | |
| US5271801A (en) | Process of production of integrated optical components | |
| CN100440447C (en) | Method of making inclined-planes used in semiconductor preparing process | |
| CN105161507A (en) | Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure | |
| US20220075259A1 (en) | Monolithically framed pellicle membrane suitable for lithography in the fabrication of integrated circuits | |
| JP2000304956A (en) | Manufacture of optical waveguide device, and optical waveguide device | |
| JP2011523466A (en) | Fabrication of thin pellicle beam splitter | |
| CN102285636B (en) | Wet etching preparation processes for polygonal section silicon beam | |
| JP4707173B2 (en) | Method for forming a specific crystallographically equivalent surface of a silicon substrate | |
| CN109387893A (en) | The manufacturing method of micro-reflector | |
| Rosengren et al. | Micromachined optical planes and reflectors in silicon | |
| US6912081B2 (en) | Optical micro-electromechanical systems (MEMS) devices and methods of making same | |
| US6786968B2 (en) | Method for low temperature photonic crystal structures | |
| JP2003207612A (en) | Method for manufacture of electromagnetic radiation reflecting device | |
| CN118226557A (en) | Processing technology of 45-degree silicon reflector based on chip processing technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170614 Address after: Chinese Taiwan Taoyuan City Patentee after: Hong Bo science and Technology Development Co.,Ltd. Address before: Virgin Islands (British) Patentee before: Taylor engineering Co.,Ltd. |
|
| TR01 | Transfer of patent right |