CN100438584C - Image process unit - Google Patents
Image process unit Download PDFInfo
- Publication number
- CN100438584C CN100438584C CNB2005100921356A CN200510092135A CN100438584C CN 100438584 C CN100438584 C CN 100438584C CN B2005100921356 A CNB2005100921356 A CN B2005100921356A CN 200510092135 A CN200510092135 A CN 200510092135A CN 100438584 C CN100438584 C CN 100438584C
- Authority
- CN
- China
- Prior art keywords
- photodiode
- photosensitive area
- process unit
- photodiodes
- those
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention comprises multi photodiodes lined up in the image sensor; the photodiodes have different sizes of sensing areas due to their different locations and the sizes of their sensing area are gradually increased from central area of the sensor to its edge in order to compensate the low sensibility caused by larger light angle.
Description
Technical field
The present invention relates to a kind of image sensor, relate in particular to the image process unit of a kind of CMOS (Complementary Metal Oxide Semiconductor) image sensor (CMOS image sensor).
Background technology
The CMOS image sensor is a kind ofly can convert light signal to photoelectric conversion device that computer can be recognized, handles and store with image pattern through scanning motion.Because the CMOS image sensor is the light and shade of coming sensing image with integrated photovoltaic module, complicated optical imaging concept compared to charge coupled cell (CCD), can accomplish that simpler, assembling easily, low-cost, and meeting light, thin, short, the little requirements of the times of product trend, the product of its application comprises low order scanner, digital camera/video camera or the like.
In image processing, the CMOS image sensor is that the pixel cell that the photodiode (photodiode) by arrayed is constituted comes pick-up image, and on behalf of the light signal that is projeced on the photodiode, the susceptibility of each pixel cell (sensitivity) convert the intensity performance of electronic signal to, if when photodiode reduces the susceptibility of light, will directly influence the validity and the saturation of image capture.
It should be noted that, existing C MOS image sensor is arranged in the pixel cell of array kenel or the pixel cell of linear kenel with the photodiode of same size, yet the photodiode of fringe region or two side areas is for the photodiode of middle section, has bigger angle of light, also because of so causing the excessive susceptibility that makes of angle of light to reduce.The effect of this kind edge decay (attenuation) directly influences the quality of imaging, causes central authorities' situation darker than bright limb.Though on the light compensation technique, can strengthen the light signal of fringe region by the focusing of software or lenticule (microlens), or calculate the effective area of preferable photosensitive region via the image size, effect still is limited.
Summary of the invention
The purpose of this invention is to provide a kind of image process unit, use the susceptibility of the photodiode that improves fringe region or two side areas.
The present invention proposes a kind of image process unit, be applicable to an image sensor, this image process unit comprises: a plurality of photodiodes, be arranged in this image sensor, these photodiodes have the photosensitive area of different size according to the difference of position, the photosensitive area of these photodiodes is outwards increased progressively in regular turn by middle section, the transverse width of photosensitive area that wherein is arranged in those photodiodes of same row is increased progressively to both sides in regular turn by middle section, and the vertical width that is arranged in the photosensitive area of those photodiodes of delegation is increased progressively to both sides in regular turn by middle section.
Described according to the preferred embodiments of the present invention, above-mentioned image sensor for example is the CMOS image sensor.
Described according to the preferred embodiments of the present invention, above-mentioned photodiode for example is arranged in the image sensor with array kenel or linear kenel.
Described according to the preferred embodiments of the present invention, above-mentioned photodiode is for example outwards divided into a plurality of blocks by middle section, and the photosensitive area of the photodiode in each block is identical.
Described according to the preferred embodiments of the present invention, the wherein proportional increase of the sine value of the photosensitive area of each photodiode and its incident light.
Described according to the preferred embodiments of the present invention, the wherein photosensitive area of each photodiode and the proportional increase of susceptibility attenuation.
The present invention compensates susceptibility and becomes the problem that reduces greatly with angle of light because of adopting the different photodiode of photosensitive area ratio.Therefore, the photodiode that is positioned at fringe region or two side areas so can increase susceptibility, has effect that edge decay to overcome because of having bigger photosensitive area.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 illustrates the schematic diagram of a kind of image process unit of one embodiment of the present invention;
Fig. 2 illustrates the configuration schematic diagram between image process unit of the present invention and the incident light.
The main element symbol description
100: image process unit
110: photodiode
111: photosensitive area is the photodiode of A0
112～115: photosensitive area is the photodiode of A1
116～119: photosensitive area is the photodiode of A2
122～125: photosensitive area is A
MaxPhotodiode
310: lens
311～314: photodiode
Embodiment
Fig. 1 illustrates the schematic diagram of a kind of image process unit of first embodiment of the invention.But the prior art before the principle application reference of the type of drive of relevant image process unit 100 and imaging, to obtain more detailed description, content is what follows only done detailed explanation at the mode of image process unit 100 arrangements and the variation of size.
Please refer to Fig. 1, image process unit 100 mainly comprises a plurality of transversely arranged and vertical photodiodes of arranging 110,120.On arrangement mode, photodiode 110,120 can be formed the pixel cell of array kenel by the layout designs of semiconductor element, is incident in light signal on the photodiode 110,120 with acquisition, and converts the electronic signal that can read to.The present invention unlike the prior art be, photodiode 110,120 has the photosensitive area of different size according to the difference of position, particularly, the photosensitive area of photodiode 110,120 is outwards increased progressively in regular turn by middle section.
As shown in Figure 1, the photodiode 111 that is positioned at middle section C has minimum photosensitive area A0, that is transverse width W0 and vertical width H0 with minimum, and all the other photodiodes 110,120 that are positioned at beyond the middle section C increase its photosensitive area along horizontal axis or vertical axial with certain proportion respectively, make the photodiode 112～119 in outermost peripheral edge zone have bigger photosensitive area A1, A2 relatively.Photodiode 110 with same row (N row) is an example, and the transverse width W1 of photosensitive area A1 is that the transverse width W0 by middle section increases progressively with certain proportion in regular turn to both sides.In addition, vertical width H2 of the photosensitive area A2 of the photodiode 120 of same delegation (M is capable) also can be increased progressively with certain proportion to both sides in regular turn by vertical width H0 of middle section.
In Fig. 1, when photodiode 110,120 is arranged with the array kenel, and the transverse width of different line numbers and the photodiode 110,120 of different columns or when vertically width increased simultaneously in certain proportion, the photodiode 122～125 of four corner regions had maximum photosensitive area A respectively
Max, but the present invention is not limited to this.That is to say that photodiode can also linear kenel be arranged except arranging with the array kenel.For example, when a plurality of photodiodes came same row, the transverse width of these photodiodes was increased progressively to both sides in regular turn by middle section C, so the photodiode of two side areas has maximum photosensitive area A
MaxSimilarly, when a plurality of photodiodes came with delegation, vertical width of these photodiodes was increased progressively to both sides in regular turn by middle section C, so the photodiode of two side areas has maximum photosensitive area A
Max
Among above-mentioned two embodiment, the photodiode of " middle section " for example comprises a plurality of adjacent and photodiodes that photosensitive area is identical, and all the other photodiodes are outwards divided into a plurality of blocks by middle section, have a plurality of adjacent and photodiodes that photosensitive area is identical in each block.No matter divide into a plurality of blocks but have or not, these photodiodes all can improve the effect of edge decay by the variation (outwards being increased progressively in regular turn by middle section) of size, and details are as follows.
Please refer to Fig. 2, it illustrates the configuration schematic diagram between image process unit of the present invention and the incident light.With the CMOS image sensor is example, and the light signal of external image sees through after the refraction of lens 310, is incident on arrayed or the linearly aligned photodiode 311～314 with different incidence angles.Wherein, light signal is incident to the photodiode 311 of middle section C with the incidence angle of minimum, but along with the change of incidence angle is big, the photodiode 314 of fringe region or two side areas has maximum incidence angle, relatively has maximum susceptibility attenuation.It should be noted that the present invention by the photosensitive area that increases fringe region or two side areas, the susceptibility that compensates photodiode 314 becomes the problem that reduces greatly with angle of light.
Learn that by sine the angle of the incident light big resulting sine value of healing is also just big more.According to this principle, when the photosensitive area of design photodiode 310, can increase with certain proportion according to the sine value of incident light.For instance, suppose, the photosensitive area of the photodiode 311 of middle section C is A0, and the sine value of incident light is when being sin30 °, this moment, the photosensitive area of photodiode 312 was increased to A0 (1+sin30 °) by A0, and when the sine value of incident light became greatly sin45 °, this moment, the photosensitive area of photodiode 313 was increased to A0 (1+sin45 °) by A0, the rest may be inferred, and the photosensitive area of outermost photodiode 314 is increased to A0 (1+sin θ by A0
Max).
In addition, the photosensitive area of photodiode 310 also can increase with certain proportion according to the attenuation of susceptibility.For example, learn that the susceptibility of the photodiode 314 of edge or two side areas was decayed at 30% o'clock, the photosensitive area of photodiode 314 can be increased to A0 (1+30%) by A0, to overcome the effect of edge decay via experimental data.It only is an illustrative examples that aforesaid area increases mode, and practical situation adjusts in the time of can be according to design.
Hence one can see that, no matter is the phenomenons such as susceptibility decay that effect or other factors caused that incidence angle becomes the big edge decay that causes, and all can be compensated by above-mentioned rule, and brightness is even to obtain, the high-quality clearly image of color.
In sum, image process unit of the present invention is made up of the photodiode of different photosensitive areas, particularly photosensitive area is increased progressively to two side areas in regular turn by middle section, or is increased progressively in regular turn to the zone, edge by middle section, and is excessive and susceptibility is reduced to avoid angle of light.Therefore, central authorities' situation darker than bright limb that existing edge attenuation effect is produced can be improved, to improve the quality of image capture.In addition, the photosensitive area of photodiode can increase with certain proportion according to the sine value of incident light or according to the susceptibility attenuation, thus can obtain brightness evenly, the high-quality clearly image of color.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (7)
1. an image process unit is applicable to an image sensor, and this image process unit comprises:
A plurality of photodiodes, be arranged in this image sensor, those photodiodes have the photosensitive area of different size according to the difference of position, the photosensitive area of those photodiodes is outwards increased progressively in regular turn by middle section, the transverse width of photosensitive area that wherein is arranged in those photodiodes of same row is increased progressively to both sides in regular turn by middle section, and the vertical width that is arranged in the photosensitive area of those photodiodes of delegation is increased progressively to both sides in regular turn by middle section.
2. image process unit as claimed in claim 1, wherein this image sensor comprises the CMOS image sensor.
3. image process unit as claimed in claim 1, wherein those photodiodes are arranged in this image sensor with array kenel or linear kenel, described array kenel is lined up the matrix of multirow and multiple row for those photodiodes, and described linear kenel comes same row or comes same delegation for those photodiodes.
4. image process unit as claimed in claim 1, wherein those photodiodes are outwards divided into a plurality of blocks by middle section, and those blocks are adjacent one another are, and the photosensitive area of the photodiode in each those block is identical.
5. image process unit as claimed in claim 1, the wherein proportional increase of the sine value of the photosensitive area of each those photodiode and its incident light.
6. image process unit as claimed in claim 1, the wherein photosensitive area of each those photodiode and the proportional increase of susceptibility attenuation.
7. image process unit as claimed in claim 1 also comprises lens, is disposed on those photodiodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100921356A CN100438584C (en) | 2005-08-19 | 2005-08-19 | Image process unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100921356A CN100438584C (en) | 2005-08-19 | 2005-08-19 | Image process unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1917591A CN1917591A (en) | 2007-02-21 |
| CN100438584C true CN100438584C (en) | 2008-11-26 |
Family
ID=37738470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100921356A Active CN100438584C (en) | 2005-08-19 | 2005-08-19 | Image process unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100438584C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI533079B (en) * | 2014-05-06 | 2016-05-11 | Univ Nat Taiwan Normal | Panoramic imaging system and method thereof |
| CN105812685A (en) * | 2014-12-29 | 2016-07-27 | 格科微电子（上海）有限公司 | Pixel array and method for improving light response uniformity of pixel array |
| CN104810379B (en) * | 2015-05-05 | 2019-01-08 | 苏州晶方半导体科技股份有限公司 | image sensor |
| CN108416247A (en) * | 2017-02-09 | 2018-08-17 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN108416248A (en) * | 2017-02-09 | 2018-08-17 | 上海箩箕技术有限公司 | Display module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065140A (en) * | 1996-08-14 | 1998-03-06 | Sony Corp | Image pick-up element |
| US6376822B1 (en) * | 1997-08-12 | 2002-04-23 | Rohm Co., Ltd. | Image reading apparatus |
| CN1464737A (en) * | 2002-06-27 | 2003-12-31 | 力捷电脑股份有限公司 | Image sensor having multiple pixel size |
-
2005
- 2005-08-19 CN CNB2005100921356A patent/CN100438584C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065140A (en) * | 1996-08-14 | 1998-03-06 | Sony Corp | Image pick-up element |
| US6376822B1 (en) * | 1997-08-12 | 2002-04-23 | Rohm Co., Ltd. | Image reading apparatus |
| CN1464737A (en) * | 2002-06-27 | 2003-12-31 | 力捷电脑股份有限公司 | Image sensor having multiple pixel size |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1917591A (en) | 2007-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9324754B2 (en) | Imaging sensors including photodetecting devices with different well capacities and imaging devices including the same | |
| US6969877B2 (en) | Solid-state imaging device | |
| US9818783B2 (en) | Solid-state image pickup apparatus and electronic apparatus | |
| JP4307497B2 (en) | Solid-state imaging device, solid-state imaging device, and electronic information device | |
| CN100562069C (en) | Be provided with the solid-state image pickup device of light converging micro-lenses and adopt its camera apparatus | |
| CN108156400A (en) | Picture pick-up device and its driving method and photographic device | |
| CN103208499A (en) | Solid-state imaging device and electronic apparatus | |
| US20090027541A1 (en) | Solid State Imaging Device | |
| CN106888358A (en) | The driving method and electronic installation of solid imaging element, solid imaging element | |
| US9525005B2 (en) | Image sensor device, CIS structure, and method for forming the same | |
| US11659289B2 (en) | Imaging apparatus and method, and image processing apparatus and method | |
| CN100438584C (en) | Image process unit | |
| JP2011103359A (en) | Solid-state image sensor and electronic information apparatus | |
| CN101278399A (en) | Solid state imaging device, its manufacturing method, and electronic information device | |
| CN111414901A (en) | Fingerprint sensing module and electronic device | |
| US20070029580A1 (en) | Image-processing unit | |
| CN212783451U (en) | Optical biological characteristic sensor with anti-interference structure of stray light | |
| CN111223882A (en) | Image sensor, image processing method and storage medium | |
| JP2006344880A (en) | Imaging apparatus comprising microlens | |
| JPS63147365A (en) | Solid-state image sensing device | |
| CN108111727A (en) | A kind of imaging sensor and camera module | |
| CN210836126U (en) | Photosensitive pixel, image collector, fingerprint collection equipment and display equipment | |
| US20230035728A1 (en) | Color-infrared sensor with a low power binning readout mode | |
| TWI268102B (en) | Image processing unit | |
| KR100238641B1 (en) | Colour image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |