CN100437311C - Picture element structure - Google Patents
Picture element structure Download PDFInfo
- Publication number
- CN100437311C CN100437311C CNB2006100784809A CN200610078480A CN100437311C CN 100437311 C CN100437311 C CN 100437311C CN B2006100784809 A CNB2006100784809 A CN B2006100784809A CN 200610078480 A CN200610078480 A CN 200610078480A CN 100437311 C CN100437311 C CN 100437311C
- Authority
- CN
- China
- Prior art keywords
- drain
- element structure
- image element
- extension
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a picture element structure controlled by scanning line and data line on the base, which consists of film transistor and picture element electrode, wherein the film transistor contains first dielectric layer, semiconductor layer, Ohm contact layer, source and drain, second dielectric layer; the first dielectric layer covers the scanning line; the semiconductor layer is set on the first dielectric layer on the scanning line; the semiconductor layer has host and at least one extending part to connect the host with extending part projected from host rim between source and drain; the Ohm contact layer is set on the part of the host; the source and drain are place on the Ohm contact layer with source connecting data line electrically; the second dielectric layer covers the source and part of the drain; the picture element electrode connecting the drain of film transistor electrically. Therefore, the picture element structure can reduce the leakage current.
Description
Technical field
The invention relates to a kind of image element structure, and particularly relevant for a kind of image element structure that is applied to Thin Film Transistor-LCD.
Background technology
(Cathode Ray Tube has been since the black and white television set invention of mode of operation CRT), and display technique is just with the continuous evolution of very fast speed with cathode-ray tube (CRT) since first.Yet, since with the display of cathode ray tube manufacturers have that volume is big, shortcoming such as Heavy Weight, radiant quantity height and image quality are relatively poor, therefore new plane display technique just constantly is developed out.In these plane display techniques, compact to have again, power saving, low radiation, full-color and LCD (LiquidCrystal Display, LCD) the most skillful and universalness of technology of advantage such as be convenient for carrying.Such as mobile phone, digital camera, digital code camera, personal digital assistant (Personal Digital Assistant, PDA), mobile computer, LCD TV etc. all have its range of application.
Because LCD develops gradually towards high resolving power (High Resolution) and develops, yet in the display panels manufacture process, on display panels, can form some flaws (defect) unavoidably, and these flaws will cause the quality of image to descend.Below be that example describes with regard to Thin Film Transistor-LCD.
Figure 1A is shown as the vertical view of known a kind of image element structure, and Figure 1B shows the sectional view along the A-A ' line among Figure 1A.Please jointly with reference to Figure 1A and Figure 1B, this image element structure 100 is suitable for being controlled by sweep trace on the substrate 25 50 and data line 75.Image element structure 100 comprises thin film transistor (TFT) 110 and pixel electrode 120.Thin film transistor (TFT) 110 comprises the first dielectric layer 112a, semiconductor layer 114, ohmic contact layer 116, source electrode 118a, drain 118b and the second dielectric layer 112b.Wherein, thin film transistor (TFT) 110 is to utilize sweep trace 50 partly as gate, and the first dielectric layer 112a covers sweep trace 50.Semiconductor layer 114 is disposed on the first dielectric layer 112a of sweep trace 50 tops, and ohmic contact layer 116 is disposed on the semiconductor layer 114.Source electrode 118a and drain 118b are disposed on the ohmic contact layer 116, and wherein source electrode 118a and data line 75 electrically connect.The second dielectric layer 112b covers source electrode 118a and part drain 118b, and the second dielectric layer 112b has contact window 130.Pixel electrode 120 just electrically connects via the drain 118b of contact window 130 with thin film transistor (TFT) 110.
Referring again to Figure 1B, in general thin film transistor (TFT) processing procedure, can utilize photoresist layer (not shown) and source electrode 118a and drain 118b as etch mask, the ohmic contact layer 116 of semiconductor layer 114 tops is removed, (Back Channel Etching BCE) finishes the making of thin film transistor (TFT) 110 just can to carry on the back the passage etching.Yet this kind mode is in the making of large tracts of land panel, because whole etch-rate uniformity coefficient difference to some extent, so 116 etchings of part ohmic contact layer are incomplete.Because ohmic contact layer 116 has favorable conductive character, thus leakage current easily in Figure 1A shown path S1 take place.
Hold above-mentionedly, being known as the practice that reduces leakage phenomenon has following two kinds.First kind of mode is the interfloor distance that increases between semiconductor layer 114 and source electrode 118a and the drain 118b, shown in Figure 1B.And first kind of mode is to increase the load capacitance (load capacitance) of circuit and the aperture opening ratio (aperture ratio) that reduces image element structure 100, therefore causes distortion and the phenomenons such as flicker (Flicker) and display brightness reduction that drive signal.
Please refer to Fig. 2, second method is to increase source electrode 218a and the drain 218b distance at marginal position, and it is disclosed among the U.S. Patent Publication No. US2005/0041169A1.As shown in Fig. 2, the distance between source electrode 218a and the drain 218b is L1 (being passage length), and distance is L2 between the edge of source electrode 218a and drain 218b.That is to say that the distance at marginal position between source electrode 218a and the drain 218b has increased Δ L, and wide variety Δ w.Therefore, under the situation that does not reduce firing current, this design can reduce the generation of leakage current.Though the leakage current in this design reduces, the leakage current degree that reduces can not promote the On/Off current ratio (Ion/Ioff) that arrives needed standard.
Summary of the invention
The purpose of this invention is to provide a kind of image element structure, to reduce the incomplete leakage current that is produced of ohmic contact layer etching.
For achieving the above object, image element structure provided by the invention is suitable for by one scan line on the substrate and data line control, and this image element structure comprises:
One thin film transistor (TFT) comprises:
One first dielectric layer covers this sweep trace;
Semi-conductor layer is disposed on this first dielectric layer of this sweep trace top at least, and this semiconductor layer comprises a main body and at least one extension, and wherein this extension is connected with this main body;
One ohmic contact layer is disposed on this main body of part;
An one source pole and a drain are disposed on this ohmic contact layer, and this source electrode and this data line electrically connect, and this extension of this semiconductor layer this body rim between this drain and this source electrode is outstanding;
One second dielectric layer covers this source electrode and this drain of part; And
One pixel electrode is with this drain electric connection of this thin film transistor (TFT).
Described image element structure, wherein the bearing of trend of this extension is parallel with the bearing of trend of this sweep trace.
Described image element structure, wherein this source electrode has a breach, and this drain of part is positioned at this breach.
Described image element structure, wherein the bearing of trend of this extension is parallel with the bearing of trend of this sweep trace.
Described image element structure, wherein this main body of the part of this semiconductor layer is positioned at this data line below, and this extension of this semiconductor layer this body rim between this drain and this data line is outstanding.
Described image element structure, wherein this pixel electrode comprises transparency electrode, reflecting electrode or semi-penetration semi-reflective electrode.
Described image element structure, wherein the material of this pixel electrode comprises indium tin oxide or indium-zinc oxide.
According to the present invention, a kind of image element structure also is provided, be suitable for by one scan line on the substrate and data line control, this image element structure comprises:
One thin film transistor (TFT) comprises:
One gate electrically connects with this sweep trace;
One first dielectric layer covers this gate;
Semi-conductor layer is disposed on this first dielectric layer of this gate top at least, and this semiconductor layer comprises a main body and at least one extension, and wherein this extension is connected with this main body;
One ohmic contact layer is disposed on this main body of part;
An one source pole and a drain are disposed on this ohmic contact layer, and this source electrode and this data line electrically connect, and this extension of this semiconductor layer this body rim between this drain and this source electrode is outstanding;
One second dielectric layer covers this source electrode and this drain of part; And
One pixel electrode is with this drain electric connection of this thin film transistor (TFT).
Described image element structure, wherein the bearing of trend of this extension is parallel with the bearing of trend of this data line.
Described image element structure, wherein this pixel electrode comprises transparency electrode, reflecting electrode or semi-penetration semi-reflective electrode.
Described image element structure, wherein the material of this pixel electrode comprises indium tin oxide or indium-zinc oxide.
In other words, image element structure of the present invention, it is suitable for by the sweep trace on the substrate and data line and controls, and image element structure comprises thin film transistor (TFT) and pixel electrode.Thin film transistor (TFT) comprises first dielectric layer, semiconductor layer, ohmic contact layer, source electrode, drain and second dielectric layer.Wherein, first dielectric layer covers sweep trace, and semiconductor layer is disposed on first dielectric layer of sweep trace top at least.Semiconductor layer comprises main body and at least one extension, and wherein extension is connected with main body, and ohmic contact layer is disposed on the part main body.Source electrode and drain then are disposed on the ohmic contact layer, and source electrode and data line electrically connect, and the body rim of the extension of semiconductor layer between drain and source electrode is outstanding.Second dielectric layer covers source electrode and part drain, and pixel electrode and drain of film transistor electrically connect.
In one embodiment of this invention, the bearing of trend of the extension of semiconductor layer is parallel with the bearing of trend of sweep trace.
In one embodiment of this invention, source electrode has a breach, and the part drain is positioned at breach.
In one embodiment of this invention, the bearing of trend of the extension of semiconductor layer is parallel with the bearing of trend of sweep trace.
In one embodiment of this invention, the part main body of semiconductor layer is positioned at the data line below, and the body rim of the extension of semiconductor layer between drain and data line is outstanding.
In one embodiment of this invention, pixel electrode comprises transparency electrode, reflecting electrode or semi-penetration semi-reflective electrode.
In one embodiment of this invention, the material of pixel electrode comprises indium tin oxide or indium-zinc oxide.
According to the present invention, another kind of image element structure is proposed, be suitable for by sweep trace on the substrate and data line control.This image element structure comprises thin film transistor (TFT) and pixel electrode.Thin film transistor (TFT) comprises gate, first dielectric layer, semiconductor layer, ohmic contact layer, source electrode, drain and second dielectric layer.Wherein, gate and sweep trace electrically connect, and first dielectric layer covers gate.Semiconductor layer is disposed on first dielectric layer of gate top at least, and semiconductor layer comprises main body and at least one extension, and wherein extension is connected with main body.Ohmic contact layer is disposed on the part main body.Source electrode and drain are disposed on the ohmic contact layer, and source electrode and data line electrically connect.The body rim of the extension of semiconductor layer between drain and source electrode is outstanding.Second dielectric layer covers source electrode and part drain.And pixel electrode and drain of film transistor electrically connect.
In one embodiment of this invention, above-mentioned semiconductor layer extension, its bearing of trend is parallel with the bearing of trend of data line.
In one embodiment of this invention, pixel electrode comprises transparency electrode, reflecting electrode or semi-penetration semi-reflective electrode.
In one embodiment of this invention, the material of pixel electrode comprises indium tin oxide or indium-zinc oxide.
Based on above-mentioned, the incomplete ohmic contact layer of etching is arranged owing to the semiconductor layer edge is residual easily, and leakage current produces along the semiconductor layer edge easily, so the present invention adopts the semiconductor layer with extension, and this extension can increase the required path of passing through of leakage current.Because ohmic contact layer is the high resistance material, so this image element structure can reduce the generation of leakage current, and then promotes On/Off current ratio (Ion/Ioff).
Description of drawings
Figure 1A is the vertical view of known a kind of image element structure.
Figure 1B is the sectional view along the A-A ' line among Figure 1A.
Fig. 2 is the vertical view of known another kind of thin-film transistor structure.
Fig. 3 A is the vertical view of a kind of image element structure of the first embodiment of the present invention.
Fig. 3 B is the sectional view along the B-B ' line among Fig. 3 A.
Fig. 4 is the vertical view of a kind of image element structure of the second embodiment of the present invention.
Fig. 5 is the vertical view of a kind of image element structure of the third embodiment of the present invention.
Fig. 6 A is the vertical view of a kind of image element structure of the fourth embodiment of the present invention.
Fig. 6 B is the sectional view along the C-C ' line among Fig. 6 A.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
First embodiment
Fig. 3 A is the vertical view of a kind of image element structure of first embodiment of the invention, and Fig. 3 B is the sectional view along the B-B ' line among Fig. 3 A.Please jointly with reference to Fig. 3 A and Fig. 3 B, this image element structure 300 is suitable for being controlled with data line 75 by the sweep trace on the substrate 25 50.This image element structure 300 comprises thin film transistor (TFT) 310 and pixel electrode 320.Wherein, pixel electrode 320 electrically connects with thin film transistor (TFT) 310.In addition, thin film transistor (TFT) 310 comprises the first dielectric layer 312a, semiconductor layer 314, ohmic contact layer 316, source electrode 318a, drain 318b and the second dielectric layer 312b.
In more detail, the first dielectric layer 312a covers sweep trace 50, and semiconductor layer 314a is disposed on the first dielectric layer 312a of sweep trace 50 tops.In other words, the part of sweep trace 50 is as the gate of thin film transistor (TFT) 310.Yet gate and sweep trace 50 also can be independent individually, as shown in Figure 6A.Semiconductor layer 314 has main body 314a and at least one extension 314b, and extension 314b is connected with main body 314a.Ohmic contact layer 316 is disposed on the main body 314a of part semiconductor layer 314, and source electrode 318a and drain 318b then are disposed on the ohmic contact layer 316, and wherein source electrode 318a and data line 75 electrically connect.The body rim of extension 314b between drain 318b and source electrode 318a that it should be noted that semiconductor layer 314 is outstanding.In the present embodiment, the bearing of trend of extension 314b is parallel with sweep trace 50 bearing of trends.Yet the bearing of trend of extension 314b is also different along with the kenel of thin film transistor (TFT) 310, its describe in detail as after.In addition, the second dielectric layer 312b covers source electrode 318a and part drain 318b, and the second dielectric layer 312b has contact window 330, and it exposes part drain 318b.Pixel electrode 320 just electrically connects via the drain 318b of contact window 330 with thin film transistor (TFT) 310.
Sweep trace 50 for example is aluminium alloy conductor or the formed lead of other suitable conductor material.The material of source electrode 318a and part drain 318b then can be chromium metal, aluminium alloy or other suitable conductor material.The material of the second dielectric layer 312b for example is silicon nitride (silicon nitride) or other suitable material.In addition, pixel electrode 320 for example is a transparency electrode (transmissive electrode), reflecting electrode (reflective electrode) or semi-penetration semi-reflective electrode (transflectiveelectrode).Wherein, the material of transparency electrode can be indium tin oxide (Indium Tin Oxide, ITO) or indium-zinc oxide (Indium Zinc Oxide, IZO).
Produce (just by the path S1 of drain 118b) easily along semiconductor layer 114 edges compared to leakage current in known technology along semiconductor layer 114 edges to source electrode 118a, the present invention increases the length (just setting up extension 314b) at semiconductor layer 314 edges, to reduce the probability of leakage current along the edge generation of semiconductor layer 314, path S2 just, therefore image element structure 300 of the present invention can suppress the generation of leakage current, and promotes the required On/Off current ratio (Ion/Ioff) of image element structure arrival.
Second embodiment
Fig. 4 is the vertical view of a kind of image element structure of second embodiment of the invention.Please refer to Fig. 4, present embodiment is similar to first embodiment, and its difference is: in the thin film transistor (TFT) 410 in the present embodiment, source electrode 418a has a breach 440, and source electrode 418a and electrically connect with data line 75.In addition, part drain 418b then is positioned at the breach 440 of source electrode 418a.Similarly, at least one extension 414b that semiconductor layer 414 comprises a main body 414a and links to each other with main body 414a, wherein the main body 414a edge of extension 414b between drain 418b and source electrode 418a is outstanding.In addition, the bearing of trend of extension 414b is parallel with sweep trace 50 bearing of trends.As aforementioned, because leakage current takes place along the edge of semiconductor layer easily, so extension 414b can increase the path S3 to source electrode 418a by drain 418b, to suppress the generation of leakage current.
The 3rd embodiment
Fig. 5 is the vertical view of a kind of image element structure of third embodiment of the invention.Please refer to Fig. 5, present embodiment is similar to first embodiment, its difference is: in the thin film transistor (TFT) 510 of present embodiment, the part main body 514a of semiconductor layer 514 is positioned at data line 75 belows, and the main body 514a edge of the extension 514b of semiconductor layer 514 between drain 518b and data line 75 is outstanding.Similarly, owing to residual on the semiconductor layer 514 ohmic contact layer 516 is arranged, so leakage current will transmit along path S4.In order to further specify the ability that extension 514b suppresses leakage current, will be that example describes below with the described image element structure of present embodiment.
Table 1
Extension length (μ m) 05 10 20 30
Leakage current (pico-Ampere, pA) 1.44 0.57 0.86 0.60 0.43
Please refer to table 1 and Fig. 5, the length that extension 514b has is respectively 0 μ m, 5 μ m, 10 μ m, 20 μ m and five kinds of different lengths of 30 μ m.The voltage that is applied is Vg=-6 (Vol.), and measures the leakage current value along path S4.The leakage current value that the extension 514b of all lengths is measured is respectively 1.44pA, 0.57pA, 0.86pA, 0.60pA, 0.43pA.As shown in Table 1, leakage current value is along with the length of extension 514b increases and reduces.More specifically, the length of extension 514b is 0 μ m (known technology) and the length of extension 514b is that the leakage current ratio of 30 μ m is about 3.7 times.Therefore, compared to known technology, the image element structure of present embodiment can reduce leakage current, to promote On/Off current ratio (Ion/Ioff).In other words, compared to known technology, adopt the display panels of the image element structure of present embodiment to have good display quality.
The 4th embodiment
Fig. 6 A is the vertical view of a kind of image element structure in the fourth embodiment of the invention, and Fig. 6 B is the sectional view along the C-C ' line among Fig. 6 A.Please refer to Fig. 6 A and Fig. 6 B, present embodiment is similar to first embodiment, and its difference is: in the image element structure 600 of present embodiment, thin film transistor (TFT) 610 has gate 618c, and gate 618c and sweep trace 50 electrically connect.The first dielectric layer 612a covers gate 618c.Semiconductor layer 614 is disposed on the first dielectric layer 612a of gate 618c top, and semiconductor layer 614 have main body 614a and with at least one extension 614b, wherein extension 614b is connected with main body 614a.In addition, 616 of ohmic contact layers are disposed on the main body 614a of part semiconductor layer 614.Source electrode 618a and drain 618b then are disposed on the ohmic contact layer 616, and source electrode 618a and electrically connect with data line 75.Similarly, extension 614b also is that main body 614a edge between drain 618b and source electrode 618a is outstanding.In the present embodiment, the bearing of trend of extension 614b is parallel with data line 75 bearing of trends.The second dielectric layer 612b covers source electrode 618a and drain 618b partly, and the second dielectric layer 612b has contact window 630, and it exposes part drain 618b.Pixel electrode 620 is just electrically connected by the drain of contact window 630 with thin film transistor (TFT) 610.
Similarly, present embodiment will be the ability that example explanation extension 614b suppresses leakage current with the extension 614b of different length.
Table 2
Extension length (μ m) 05 10 20
Leakage current (pico-Ampere, pA) 0.74 0.44 0.36 0.38
Please refer to table 2 and Fig. 6 A, the length that extension 614b has is respectively 0 μ m, 5 μ m, 10 μ m and four kinds of different lengths of 20 μ m.The voltage that is applied is Vg=-6 (Vol.), and measures the leakage current value along path S5.The leakage current value that the extension 614b of all lengths is measured is respectively 0.74pA, 0.44pA, 0.36pA, 0.38pA.
Similarly, as shown in Table 2, leakage current value is elongated and reduce along with extension 614b length.For example, when the length of extension 614b when to be 0 μ m (known technology) with the length of extension 614b be 10 μ m, both leakage current ratios are about 2.1 times.Therefore, compared to known technology, the image element structure of present embodiment can reduce leakage current, to promote On/Off current ratio (Ion/Ioff).
In sum, image element structure of the present invention has following advantage:
One, because leakage current takes place along the edge of semiconductor layer easily, so the present invention utilizes extension to increase the length at semiconductor layer edge, to reduce leakage current.
Two, because the present invention can reduce leakage current, so On/Off current ratio (Ion/Ioff) can improve.In other words, because On/Off current ratio (Ion/Ioff) can improve, therefore adopt the difficult flicker and the string shadow etc. of producing of display panels of image element structure of the present invention to show bad phenomenon, with the raising display quality.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this technician; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when the content that claim defines that look application.
Claims (11)
1. an image element structure is suitable for by one scan line on the substrate and data line control, and this image element structure comprises:
One thin film transistor (TFT) comprises:
One first dielectric layer covers this sweep trace;
Semi-conductor layer is disposed on this first dielectric layer of this sweep trace top at least, and this semiconductor layer comprises a main body and at least one extension, and wherein this extension is connected with this main body;
One ohmic contact layer is disposed on this main body of part;
An one source pole and a drain are disposed on this ohmic contact layer, and this source electrode and this data line electrically connect, and this extension of this semiconductor layer this body rim between this drain and this source electrode is outstanding;
One second dielectric layer covers this source electrode and this drain of part; And
One pixel electrode is with this drain electric connection of this thin film transistor (TFT).
2. image element structure as claimed in claim 1, wherein the bearing of trend of this extension is parallel with the bearing of trend of this sweep trace.
3. image element structure as claimed in claim 1, wherein this source electrode has a breach, and this drain of part is positioned at this breach.
4. image element structure as claimed in claim 3, wherein the bearing of trend of this extension is parallel with the bearing of trend of this sweep trace.
5. image element structure as claimed in claim 1, wherein this main body of the part of this semiconductor layer is positioned at this data line below, and this extension of this semiconductor layer this body rim between this drain and this data line is outstanding.
6. image element structure as claimed in claim 1, wherein this pixel electrode comprises transparency electrode, reflecting electrode or semi-penetration semi-reflective electrode.
7. image element structure as claimed in claim 6, wherein the material of this pixel electrode comprises indium tin oxide or indium-zinc oxide.
8. an image element structure is suitable for by one scan line on the substrate and data line control, and this image element structure comprises:
One thin film transistor (TFT) comprises:
One gate electrically connects with this sweep trace;
One first dielectric layer covers this gate;
Semi-conductor layer is disposed on this first dielectric layer of this gate top at least, and this semiconductor layer comprises a main body and at least one extension, and wherein this extension is connected with this main body;
One ohmic contact layer is disposed on this main body of part;
An one source pole and a drain are disposed on this ohmic contact layer, and this source electrode and this data line electrically connect, and this extension of this semiconductor layer this body rim between this drain and this source electrode is outstanding;
One second dielectric layer covers this source electrode and this drain of part; And
One pixel electrode is with this drain electric connection of this thin film transistor (TFT).
9. image element structure as claimed in claim 8, wherein the bearing of trend of this extension is parallel with the bearing of trend of this data line.
10. image element structure as claimed in claim 8, wherein this pixel electrode comprises transparency electrode, reflecting electrode or semi-penetration semi-reflective electrode.
11. image element structure as claimed in claim 10, wherein the material of this pixel electrode comprises indium tin oxide or indium-zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100784809A CN100437311C (en) | 2006-05-30 | 2006-05-30 | Picture element structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100784809A CN100437311C (en) | 2006-05-30 | 2006-05-30 | Picture element structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101082743A CN101082743A (en) | 2007-12-05 |
| CN100437311C true CN100437311C (en) | 2008-11-26 |
Family
ID=38912382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100784809A Expired - Fee Related CN100437311C (en) | 2006-05-30 | 2006-05-30 | Picture element structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100437311C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001177104A (en) * | 1999-12-21 | 2001-06-29 | Furontekku:Kk | Thin film transistor, method of manufacturing the same, and liquid crystal display device equipped therewith |
| US6303946B1 (en) * | 1997-07-18 | 2001-10-16 | Lg. Philips Lcd Co., Ltd. | Thin film transistor substrate and liquid crystal display unit having a low-resistance silicon compound film |
| JP2002329726A (en) * | 2001-04-26 | 2002-11-15 | Advanced Display Inc | Tft array substrate and liquid crystal display device using it |
| CN1399164A (en) * | 2001-07-23 | 2003-02-26 | 日本电气株式会社 | Liquid crystal display |
-
2006
- 2006-05-30 CN CNB2006100784809A patent/CN100437311C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303946B1 (en) * | 1997-07-18 | 2001-10-16 | Lg. Philips Lcd Co., Ltd. | Thin film transistor substrate and liquid crystal display unit having a low-resistance silicon compound film |
| JP2001177104A (en) * | 1999-12-21 | 2001-06-29 | Furontekku:Kk | Thin film transistor, method of manufacturing the same, and liquid crystal display device equipped therewith |
| JP2002329726A (en) * | 2001-04-26 | 2002-11-15 | Advanced Display Inc | Tft array substrate and liquid crystal display device using it |
| CN1399164A (en) * | 2001-07-23 | 2003-02-26 | 日本电气株式会社 | Liquid crystal display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101082743A (en) | 2007-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11417716B2 (en) | Organic light emitting display substrate and panel with photodetector for light compensation of subpixel | |
| US10497620B2 (en) | TFT substrate and manufacturing method thereof and manufacturing method of OLED panel | |
| US7507998B2 (en) | System for displaying images and method for fabricating the same | |
| US10727322B2 (en) | Multi-layered passivation layer of a back-channel-etched thin film transistor having different oxygen concentration | |
| US20230255065A1 (en) | Display device | |
| US11637134B2 (en) | Array substrate, method for manufacturing the same, and display device | |
| CN1976084A (en) | Organic semiconductor thin film transistor and method of fabricating the same | |
| US20110134045A1 (en) | Method of fabricating an organic electroluminescent device and system of displaying images | |
| US11121226B2 (en) | Thin film transistor and method for manufacturing the same, array substrate and display device | |
| US7795807B2 (en) | Organic light emitting display | |
| CN109309122A (en) | Array substrate and its manufacturing method, display device | |
| CN109166892B (en) | OLED display substrate, manufacturing method thereof and OLED display panel | |
| US7053977B2 (en) | Laser repair structure of liquid crystal display device and method thereof | |
| CN110071148A (en) | Organic LED display device and its manufacturing method | |
| US10714514B2 (en) | Back-channel-etched TFT substrate | |
| US11329194B2 (en) | Display panel and display device | |
| CN100437311C (en) | Picture element structure | |
| US20220271060A1 (en) | Display device | |
| CN107808885B (en) | Back channel etching type oxide semiconductor TFT substrate and manufacturing method thereof | |
| US20240032337A1 (en) | Display panel, manufacturing method thereof, and display device | |
| CN100412632C (en) | Manufacturing method of array substrate of semi-reflection semi-penetration liquid crystal display | |
| CN114300541A (en) | Thin film transistor, manufacturing method thereof and array substrate | |
| CN1519618A (en) | Liquid crystal display with reflection being reduced | |
| US11521993B2 (en) | Display panel and method of manufacturing the same | |
| CN113555513B (en) | OLED display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20200530 |