CN100435199C - Organic illuminating display and relative pixel circuit - Google Patents
Organic illuminating display and relative pixel circuit Download PDFInfo
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- CN100435199C CN100435199C CNB2006101380380A CN200610138038A CN100435199C CN 100435199 C CN100435199 C CN 100435199C CN B2006101380380 A CNB2006101380380 A CN B2006101380380A CN 200610138038 A CN200610138038 A CN 200610138038A CN 100435199 C CN100435199 C CN 100435199C
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Abstract
The invention relates to a pixel circuit that includes first to fifth transistors, storage capacitance and emitting component. When the first transistor receives a starting signal voltage, a supplying voltage would be transferred from the voltage supplying end. The second transistor receives scan signal voltage, and a grounding voltage would be transferred from grounding end. The storage capacitance connects to the first transistor and the second transistor. The third transistor receives scan signal voltage, and turns on a data signal voltage. The fourth transistor would generate a ducting current without scan signal voltage. The fifth transistor connects to a second transistor and the second end of storage capacitance to form storage capacitance and the ducting path without scan signal voltage. The light emitting component connects to the third transistors and is used to emit according to the current of the third transistor.
Description
Technical field
The present invention relates to a kind of image element circuit that is used for organic light emitting display, relate in particular to a kind of image element circuit that compensates organic light emitting display brightness.
Background technology
Display with advanced function becomes the valuable feature of electric consumers now gradually, and wherein LCD has become the display that various electronic equipments such as mobile phone, PDA(Personal Digital Assistant), digital camera, computer screen or the widespread use of mobile computer screen institute have high-resolution color/graphics gradually.
Be different from LCD common on the market and promptly utilize the angle of the voltage decision liquid crystal deflection that is added in liquid crystal pixel and then the penetrance of control light, (Organic Light EmittingDisplay, luminous intensity OLED) is by OLED forward bias voltage drop electric current decision pixel intensity to organic light emitting display.Organic light emitting display is utilized the autoluminescence technology, does not only need back lighting, can also provide than LCD response time faster.In addition, organic light emitting display also has preferable correlative value and broad advantages such as visual angle.
With reference to Fig. 1, Fig. 1 is the circuit diagram of image element circuit 10 of the organic light emitting display of prior art.Image element circuit 10 comprises a first transistor T1, a transistor seconds T2, a memory capacitance Cst and an Organic Light Emitting Diode 12.When scanning voltage signal is imported into by scanning end SCAN and when opening the first transistor T1, voltage data signal Vdata then can be sent by data terminal DATA, is sent to the grid of transistor seconds T2 via the first transistor T1.When transistor seconds T2 was in saturation region (saturation regain), then the last conducting electric current I d of transistor seconds T2 was promptly determined by grid and the voltage between the source electrode (Vsg=Vdd-Vdata) of transistor seconds T2, that is to say Id=K (Vsg-Vt)
2=K (Vdd-Vdata-Vt)
2Because the luminosity of Organic Light Emitting Diode 12 is proportional to conducting electric current I d, so Organic Light Emitting Diode 12 is promptly adjusted the feasible corresponding different GTG of pixel generation of luminosity according to voltage data signal Vdata.In addition, because voltage data signal Vdata can be stored in memory capacitance Cst, so the brightness on Organic Light Emitting Diode 12 pixels can keep during picture changes.
With reference to Fig. 2, Fig. 2 be transistor when different starting potential, the conducting electric current with show time relation figure.Because adopt polycrystalline SiTFT circuit (Polysilicon Thin Film TransistorCircuit) when technology is made panel at present, image element circuit 10 shown in Figure 1 can be different at starting potential (threshold voltage) Vt of the transistor seconds T2 of diverse location.As can be seen from Figure 2, the starting potential of different transistor seconds T2 can cause conducting electric current I d difference to some extent, and then causes the panel luminance of Organic Light Emitting Diode 12 inconsistent.
In addition, because the load effect that conductor resistance causes, can make voltage Vdd descend, relatedly influence grid and source voltage pressure drop Vsg also and then descends, cause the conducting electric current to descend and then influence display quality.
Therefore degradation problem under the conducting electric current that load effect caused that how to improve the inconsistent of starting potential between each transistor that causes because of technology in the prior art and cause because of conductor resistance is a problem demanding prompt solution.
Summary of the invention
Therefore, fundamental purpose of the present invention provides a kind of image element circuit and a kind of organic light emitting display of using this image element circuit, to solve above-mentioned problems of the prior art.
According to above-mentioned purpose of the present invention, the invention provides a kind of image element circuit, it comprises a first transistor, a transistor seconds, one the 5th transistor, one the 3rd transistor, one the 4th transistor, a memory capacitance and a light-emitting component.Described the first transistor is coupled to a supply voltage end, is used for when being subjected to an enabling signal voltage triggered, transmits a supply voltage by described supply voltage end.Described transistor seconds is to be coupled to an earth terminal, is used for transmitting a ground voltage by described earth terminal when being subjected to the triggering of one scan signal voltage.Described memory capacitance comprises one first end and one second end, is respectively coupled to described the first transistor and described transistor seconds.Described the 3rd transistor is coupled to a data terminal, is used for when being subjected to described scanning voltage signal and triggering conducting one voltage data signal.Described the 4th transistor is used for producing a conducting electric current according to described voltage data signal when not being subjected to described scanning voltage signal and triggering.Described the 5th transistor is coupled to second end of described transistor seconds and described memory capacitance, is used for forming described memory capacitance and the described the 5th transistorized guiding path when not being subjected to described scanning voltage signal and triggering.Described light-emitting component is coupled to described the 4th transistor, is used for emitting beam according to the described the 4th transistorized conducting electric current.
The present invention also provides a kind of organic light emitting display, and it comprises a gate drivers, one source pole driver and a plurality of pixel cell.Gate drivers is used to produce one scan signal voltage and an enabling signal voltage.Source electrode driver is used to produce a voltage data signal.Each pixel cell comprises a first transistor, a transistor seconds, one the 5th transistor, one the 3rd transistor, one the 4th transistor, a memory capacitance and a light-emitting component.Described the first transistor is coupled to a supply voltage end, is used for when being subjected to an enabling signal voltage triggered, transmits a supply voltage by described supply voltage end.Described transistor seconds is coupled to an earth terminal, is used for transmitting a ground voltage by described earth terminal when being subjected to the triggering of one scan signal voltage.Described memory capacitance comprises one first end and one second end, is respectively coupled to described the first transistor and described transistor seconds.Described the 3rd transistor is coupled to a data terminal, is used for when being subjected to described scanning voltage signal and triggering conducting one voltage data signal.Described the 4th transistor is used for producing a conducting electric current according to described voltage data signal when not being subjected to described scanning voltage signal and triggering.Described the 5th transistor is coupled to second end of described transistor seconds and described memory capacitance, is used for forming described memory capacitance and the described the 5th transistorized guiding path when not being subjected to described scanning voltage signal and triggering.Described light-emitting component is coupled to described the 4th transistor, is used for emitting beam according to the described the 4th transistorized conducting electric current.
According to one embodiment of the invention, described the first transistor, described transistor seconds and described the 3rd transistor are N type metal oxide semiconductor transistors, and described transistor seconds and the 4th transistor are the P-type mos transistors.
According to another embodiment of the present invention, described the first transistor, described the 5th transistor are N type metal oxide semiconductor transistors, and described transistor seconds, described the 3rd transistor and the 4th transistor are the P-type mos transistors.
According to still another embodiment of the invention, described the first transistor, described transistor seconds, described the 3rd transistor and the 4th transistor are the P-type mos transistors, and described the 3rd transistor is a N type metal oxide semiconductor transistor.
Description of drawings
Fig. 1 is the circuit diagram of image element circuit of the organic light emitting display of prior art;
Fig. 2 be transistor when different starting potential, the graph of a relation of demonstration time and drain current;
Fig. 3 is the synoptic diagram of organic light emitting display of the present invention;
Fig. 4 is the circuit diagram of the image element circuit of the first embodiment of the present invention;
Fig. 5 to Fig. 7 illustrates image element circuit each transistorized conducting state in the display cycle of Fig. 4;
Fig. 8 is enabling signal end and the drive signal end sequential chart in the display cycle;
Fig. 9 is the circuit diagram of the image element circuit of the second embodiment of the present invention;
Figure 10 is the circuit diagram of the image element circuit of the third embodiment of the present invention.
Wherein, Reference numeral is:
10,20 image element circuits, 12 Organic Light Emitting Diodes
T1, T2 transistor 40,50 image element circuits
21,41,51 the first transistors, 22,42,52 transistor secondses
23,43,53 the 3rd transistors, 24,44,54 the 4th transistors
25,45,55 the 5th transistors, 26,46,56 light-emitting components
100 organic light emitting display, 102 gate drivers
104 source electrode drivers, 106 viewing areas
Cst memory capacitance A, B, C node
Embodiment
With reference to Fig. 3, it is the synoptic diagram of organic light emitting display 100 of the present invention.Organic light emitting display 100 comprises a gate drivers 102, one source pole driver 104 and a viewing area 106.Viewing area 106 is made up of a plurality of image element circuits 20.The image element circuit 20 that enabling signal that gate drivers 102 produces and drive signal are opened each row in regular turn, make the image element circuit 20 of same row produce different GTGs, cause viewing area 106 to present various image according to the data-signal of source electrode driver 104 generations.
With reference to Fig. 4, Fig. 4 is the circuit diagram of the image element circuit 20 of Fig. 3.Each image element circuit 20 comprises a first transistor 21, a transistor seconds 22, one the 3rd transistor 23, one the 4th transistor 24, one the 5th transistor 25, a memory capacitance Cst and a light-emitting component 26.The first transistor 21, transistor seconds 22 and the 3rd transistor 23 are N type metal oxide semiconductor transistors, and the 4th transistor 24 and the 5th transistor 25 are P-type mos transistors.The grid of the first transistor 21 is electrically connected on enabling signal end [n] EM, and its drain electrode is coupled to supply voltage end Vdd, and wherein enabling signal end [n] EM is electrically connected on gate drivers 102.The grid of transistor seconds 22 is coupled to drive signal end [n] SCAN, and its source electrode is coupled to an earth terminal, and wherein drive signal end [n] SCAN is electrically connected on gate drivers 102.The grid of the 5th transistor 25 also is coupled to drive signal end [n] SCAN, and its source electrode is coupled to the drain electrode of transistor seconds 22.The grid of the 3rd transistor 23 also is coupled to drive signal end [n] SCAN, and its source electrode is coupled to data terminal DATA, and wherein data terminal DATA is electrically connected with source electrode driver 104.The grid of the 4th transistor 24 then is coupled to the drain electrode of the 5th transistor 25 and the drain electrode of the 3rd transistor 23, and its source electrode is coupled to the source electrode of the first transistor 21, and drain electrode then is coupled to light-emitting component 26.The two ends of memory capacitance Cst then are respectively coupled to the first transistor 21 and transistor seconds 22.Light-emitting component 26 can be an Organic Light Emitting Diode, can be according to the size of current decision luminosity that flows through self.
With reference to Fig. 5 to Fig. 8, Fig. 5 to Fig. 7 illustrates image element circuit 20 each transistorized conducting state in the display cycle of Fig. 4, and Fig. 8 is enabling signal end and the drive signal end sequential chart in the display cycle.At first with reference to Fig. 5 and Fig. 8, when the period of Fig. 8 T0-T1, enabling signal end [n] EM triggers an enabling signal voltage, makes the first transistor 21 open; And the supply voltage end is to node C forward voltage Vdd, and simultaneously drive signal end [n] SCAN triggers a drive signal voltage, makes transistor seconds 22 and 23 conductings of the 3rd transistor.At this moment, to Node B conducting one ground voltage GND, and 23 conductings of the 3rd transistor are from the grid (be node A) of data-signal end DATA to the 4th transistor 24 conductings one voltage data signal Vdata from earth terminal for transistor seconds 22.During period T0-T1, the pressure reduction of memory capacitance Cst is Vdd, but the 5th transistor 25 is in closed condition.
With reference to 6 figure and Fig. 8, when the period of Fig. 8 T1-T2, enabling signal end [n] EM does not trigger described enabling signal voltage, institute so that the first transistor 21 close.Described drive signal voltage still triggers in drive signal end [n] SCAN simultaneously, makes transistor seconds 22 and the 3rd transistor 23 still open.At this moment the 4th transistor 24 promptly becomes one source pole follower (source follower), makes the voltage that is positioned at node C can drop to Vdata+Vt (Vt represents the starting potential of the 4th transistor 24) gradually.At this moment, the pressure reduction of memory capacitance Cst is Vdata+Vt.
With reference to Fig. 7 and Fig. 8, behind the time point T2 of Fig. 8, enabling signal end [n] EM can trigger enabling signal voltage, make the first transistor 21 open, and the supply voltage end is to node C forward voltage Vdd, drive signal end [n] SCAN then can not trigger drive signal voltage simultaneously, makes transistor seconds 22 and the 3rd transistor 23 close, and opens the 5th transistor 25.Like this, the current potential of node C can be because of the unlatching of the first transistor 21 via supply voltage end forward voltage Vdd.Because the pressure reduction of memory capacitance Cst is Vdata+Vt before, in order to keep the consistance of memory capacitance Cst institute stored charge, so the current potential of Node B also can jump to Vdd-Vdata-Vt.The 5th transistor 25 meeting conductings of opening this moment make that the current potential of node A is consistent with the current potential of Node B, so node A current potential at this moment is Vdd-Vdata-Vt.The 4th transistor 24 conducting electric current I d=K (Vsg-Vt) at this moment
2=K (Vdd-(Vdd-Vdata-Vt)-Vt)
2=K (Vdata)
2That is to say, only relevant during the size of the conducting electric current I d of the 4th transistor 24 is showing with voltage data signal Vdata, and irrelevant with the initial voltage Vt and the supply supply voltage Vdd that voltage end provided of the 4th transistor 24.So the disclosed image element circuit 20 of present embodiment is (being period T2-T3) during showing, the conducting electric current I d size of light-emitting component 26 of flowing through only is subjected to the influence of voltage data signal, only is subjected to the control of voltage data signal and can cause brightness irregularities owing to the influence of each transistor technology so be positioned at the luminosity of the light-emitting component of different pixels.
With reference to Fig. 9, Fig. 9 is the circuit diagram of the image element circuit 40 of the second embodiment of the present invention.Be similar to the embodiment of Fig. 4, the image element circuit 40 of present embodiment comprises a first transistor 41, a transistor seconds 42, one the 3rd transistor 43, one the 4th transistor 44, one the 5th transistor 45, a memory capacitance Cst and a light-emitting component 46.The first transistor 41 and the 5th transistor 45 are N type metal oxide semiconductor transistors, and transistor seconds 42, the 3rd transistor 43 and the 4th transistor 44 are P-type mos transistors.Light-emitting component 46 can be an Organic Light Emitting Diode, can be according to the size of current decision luminosity that flows through self.The described image element circuit of its operation logic and Fig. 4 20 is identical, and just in the size of drive signal end [n] scanning voltage signal that SCAN provided difference to some extent, this difference can be understood by ordinary skill in the art, so do not repeat them here its method of operation.
With reference to Figure 10, Figure 10 is the circuit diagram of the image element circuit 50 of the third embodiment of the present invention.Be similar to the embodiment of Fig. 4, the image element circuit 50 of present embodiment comprises a first transistor 51, a transistor seconds 52, one the 3rd transistor 53, one the 4th transistor 54, one the 5th transistor 55, a memory capacitance Cst and a light-emitting component 56.The first transistor 51, transistor seconds 52, the 3rd transistor 53 and the 4th transistor 54 are P-type mos transistors, and the 5th transistor 55 is N type metal oxide semiconductor transistors.Light-emitting component 56 can be an Organic Light Emitting Diode, can be according to the size of current decision luminosity that flows through self.The described image element circuit of its operation logic and Fig. 4 20 is identical, just in the size of drive signal end [n] scanning voltage signal that SCAN provided and enabling signal end [n] the enabling signal voltage that EM provided difference to some extent, this difference can be understood by ordinary skill in the art, so do not repeat them here its function mode.
Compared with prior art, image element circuit of the present invention is during showing, it is only relevant with voltage data signal to control the conducting electric current that flows through light-emitting component, and is not subjected to the influence of transistor initial voltage and supply voltage.Like this, although when adopting the polycrystalline SiTFT circuit engineering to make panel, the transistorized starting potential of diverse location can be variant, still can the luminosity of Organic Light Emitting Diode not impacted, and then solved the inconsistent situation problem of organic LED panel brightness.In addition, image element circuit of the present invention has also solved the problem that the load effect that causes because of conductor resistance makes that supply voltage Vdd descends, and has improved the problem that descends and cause the conducting electric current to descend and then influence display quality because of supply voltage Vdd.
Although below disclose preferential embodiment of the present invention; yet it is not in order to limit the present invention; for those of ordinary skills; without departing from the spirit and scope of the present invention; can make various changes and modification, so protection scope of the present invention should be as the criterion with the following content that claims were limited.
Claims (16)
1. an image element circuit is characterized in that, comprises:
One the first transistor is coupled to a supply voltage end, is used for when being subjected to an enabling signal voltage triggered, transmits a supply voltage by described supply voltage end;
One transistor seconds is coupled to an earth terminal, is used for transmitting a ground voltage by described earth terminal when being subjected to the triggering of one scan signal voltage;
One memory capacitance comprises one first end and one second end, is respectively coupled to described the first transistor and described transistor seconds;
One the 3rd transistor is coupled to a data terminal, is used for when being subjected to described scanning voltage signal and triggering conducting one voltage data signal;
One the 4th transistor is used for producing a conducting electric current according to described voltage data signal when not being subjected to described scanning voltage signal and triggering;
One the 5th transistor is coupled to second end of described transistor seconds and described memory capacitance, is used for forming described memory capacitance and the described the 5th transistorized guiding path when not being subjected to described scanning voltage signal and triggering; And
One light-emitting component is coupled to described the 4th transistor, is used for emitting beam according to the described the 4th transistorized conducting electric current.
2. image element circuit according to claim 1 is characterized in that, described the 4th transistor is a P-type mos transistor.
3. image element circuit according to claim 2 is characterized in that, described the first transistor is a N type metal oxide semiconductor transistor.
4. image element circuit according to claim 3 is characterized in that, described transistor seconds and described the 3rd transistor are N type metal oxide semiconductor transistors, and described the 5th transistor is a P-type mos transistor.
5. image element circuit according to claim 3 is characterized in that, described transistor seconds and described the 3rd transistor are P-type mos transistors, and described the 5th transistor is a N type metal oxide semiconductor transistor.
6. image element circuit according to claim 2 is characterized in that, described the first transistor is a P-type mos transistor.
7. image element circuit according to claim 6 is characterized in that, described transistor seconds and described the 3rd transistor are P-type mos transistors, and described the 5th transistor is a N type metal oxide semiconductor transistor.
8. image element circuit according to claim 1 is characterized in that, described light-emitting component is an Organic Light Emitting Diode.
9. an organic light emitting display is characterized in that, comprises:
One gate drivers is used to produce one scan signal voltage and an enabling signal voltage;
The one source pole driver is used to produce a voltage data signal; And
A plurality of pixel cells, each pixel cell comprises:
One the first transistor is coupled to a supply voltage end, is used for when being subjected to described enabling signal voltage triggered, transmits a supply voltage by described supply voltage end;
One transistor seconds is coupled to an earth terminal, is used for transmitting a ground voltage by described earth terminal when being subjected to described scanning voltage signal and triggering;
One memory capacitance comprises one first end and one second end, is respectively coupled to described the first transistor and described transistor seconds;
One the 3rd transistor is coupled to a data terminal, is used for when being subjected to described scanning voltage signal and triggering conducting one voltage data signal;
One the 4th transistor is used for producing a conducting electric current according to described voltage data signal when not being subjected to described scanning voltage signal and triggering;
One the 5th transistor is coupled to second end of described transistor seconds and described memory capacitance, is used for forming described memory capacitance and the described the 5th transistorized guiding path when not being subjected to described scanning voltage signal and triggering; And
One light-emitting component is coupled to described the 4th transistor, is used for emitting beam according to the described the 4th transistorized conducting electric current.
10. organic light emitting display according to claim 9 is characterized in that, described the 4th transistor is a P-type mos transistor.
11. organic light emitting display according to claim 10 is characterized in that, described the first transistor is a N type metal oxide semiconductor transistor.
12. organic light emitting display according to claim 11 is characterized in that, described transistor seconds and described the 3rd transistor are N type metal oxide semiconductor transistors, and described the 5th transistor is a P-type mos transistor.
13. organic light emitting display according to claim 11 is characterized in that, described transistor seconds and described the 3rd transistor are P-type mos transistors, and described the 5th transistor is a N type metal oxide semiconductor transistor.
14. organic light emitting display according to claim 10 is characterized in that, described the first transistor is a P-type mos transistor.
15. organic light emitting display according to claim 14 is characterized in that, described transistor seconds and described the 3rd transistor are P-type mos transistors, and described the 5th transistor is a N type metal oxide semiconductor transistor.
16. organic light emitting display according to claim 10 is characterized in that, described light-emitting component is an Organic Light Emitting Diode.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101380380A CN100435199C (en) | 2006-11-03 | 2006-11-03 | Organic illuminating display and relative pixel circuit |
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| CNB2006101380380A CN100435199C (en) | 2006-11-03 | 2006-11-03 | Organic illuminating display and relative pixel circuit |
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| CN1949342A CN1949342A (en) | 2007-04-18 |
| CN100435199C true CN100435199C (en) | 2008-11-19 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102651195B (en) | 2011-09-14 | 2014-08-27 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) pixel structure for compensating light emitting nonuniformity and driving method |
| CN102654976B (en) * | 2012-01-12 | 2014-12-24 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof, and displau device |
| CN104078003B (en) * | 2014-06-18 | 2016-08-31 | 京东方科技集团股份有限公司 | Image element circuit and display device |
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| CN1577453A (en) * | 2003-07-07 | 2005-02-09 | 三星Sdi株式会社 | Organic light emitting device pixel circuit and driving method therefor |
| KR20050113706A (en) * | 2004-05-25 | 2005-12-05 | 삼성에스디아이 주식회사 | Light emitting display |
| CN1758308A (en) * | 2004-10-08 | 2006-04-12 | 三星Sdi株式会社 | Pixel circuit and light emitting display comprising the same |
| KR20060033831A (en) * | 2004-10-16 | 2006-04-20 | 삼성에스디아이 주식회사 | Light emitting display |
| KR20060064194A (en) * | 2004-12-08 | 2006-06-13 | 엘지.필립스 엘시디 주식회사 | Light emitting display and driving method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577453A (en) * | 2003-07-07 | 2005-02-09 | 三星Sdi株式会社 | Organic light emitting device pixel circuit and driving method therefor |
| KR20050113706A (en) * | 2004-05-25 | 2005-12-05 | 삼성에스디아이 주식회사 | Light emitting display |
| CN1758308A (en) * | 2004-10-08 | 2006-04-12 | 三星Sdi株式会社 | Pixel circuit and light emitting display comprising the same |
| KR20060033831A (en) * | 2004-10-16 | 2006-04-20 | 삼성에스디아이 주식회사 | Light emitting display |
| KR20060064194A (en) * | 2004-12-08 | 2006-06-13 | 엘지.필립스 엘시디 주식회사 | Light emitting display and driving method thereof |
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