CN100433387C - Light-emitting diode chip - Google Patents
Light-emitting diode chip Download PDFInfo
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- CN100433387C CN100433387C CNB2005800112896A CN200580011289A CN100433387C CN 100433387 C CN100433387 C CN 100433387C CN B2005800112896 A CNB2005800112896 A CN B2005800112896A CN 200580011289 A CN200580011289 A CN 200580011289A CN 100433387 C CN100433387 C CN 100433387C
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Abstract
The present invention relates to a thin-film light-emitting diode chip, in which the distance between a reflective layer (4) and a light-generating active zone (3) is adjusted in such a manner that radiation from the active zone (3) can be made interfere with light reflected by the reflective layer (4), the interference affects the internal quantum efficiency of the active zone (3), and consequently realizes the emission characteristic with at least one preferred direction in the active zone (3).
Description
The present invention relates to a kind of light-emitting diode chip for backlight unit, especially relate to a kind of thin-film light emitting diode chip.
Known a kind of FCLED chip (light-emitting diode chip for backlight unit in the flip-chip device) from people's such as Y.C.Shen document " Optical cavity effects in InGaN/GaNquantum-well-heterostructure flip-chip light-emmitingdiodes (optical cavity effects the flip-chip LED of InGaN/GaN quantum well heterostructure) " (Appl.Phys.Lett. the 82nd volume, the 14th phase, the 2221st page) based on GaN.Sapphire Substrate is here as the output coupling layer.
Known a kind of film LED chip growth substrates, that have the AlGaInN epitaxial structure that do not have from document US 2003/0143772A1.
Task of the present invention is a kind of thin-film light emitting diode chip with high efficiency and low absorption loss of explanation.
A kind of thin-film light emitting diode chip has been described, wherein, has come the accommodation reflex layer like this and produce distance between the active region of light, made and interfere with the light that reflects by the reflector from the radiation of active region.By this interference effect the internal quantum of active region, and realize the radiation characteristic relevant of active region with direction.Should the radiation characteristic relevant have at least one preferred orientations with direction.It is semiconductive output coupling layer at least that thin-film light emitting diode chip has.At this, the output coupling layer is not to eliminate the reflector.
The feature of thin-film light emitting diode chip especially is following sign feature:
-in the coating on first interarea of carrier element of the epitaxial loayer sequence that produces radiation or constructed the layer that reflects, this layer that reflects is produced at least a portion in the extension sequence of layer ELECTROMAGNETIC RADIATION REFLECTION returns in this epitaxial loayer sequence;
-epitaxial loayer sequence has the thickness in 20 μ m or scope still less, especially has the thickness in the scope between 4 μ m and 10 μ m; With
-epitaxial loayer sequence comprises at least one semiconductor layer with at least one face, this semiconductor layer has a kind of mixing structure, this mixing structure causes light to be close to ergodic distribution in the ideal case in the epitaxial loayer sequence of extension, and just this mixing structure has a kind of at random scattering properties as far as possible ergodicly.
The thin-film light emitting diode chip good approximation is a kind of bright Bert (Lambert ' s cher) surface radiator.For example in people's such as I.Schnitzer document (Appl.Phys.Lett.63 (16), on October 18th, 1993,2174-2176 page or leaf), the basic principle of thin layer light-emitting diode chip for backlight unit has been described.
Now film LED chip especially is interpreted as light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit has the layer structure that has epitaxially grown layer, preferably, removes growth substrates from this light-emitting diode chip for backlight unit after growth.At least a portion of epitaxially grown layer is a semiconductor layer.Chip can have the carrier that is different from growth substrates, has applied layer structure on this carrier.
Illustrated film LED chip does not have resonator.Opposite with RCLED (resonant cavity light-emitting diode (Resonant Cavity Light Emmiting Diode)), illustrated film LED chip includes only unique minute surface.Opposite with RCLED, the layer structure of film LED chip and especially extension advantageously do not comprise Prague minute surface.
In the preferred variation scheme, thin-film light emitting diode chip is based on GaN.Opposite with the flip-chip LED on the Sapphire Substrate based on GaN, output coupling from semiconductor body that the light that is produced in semiconductor body directly (does not promptly have absorption loss and reflection loss ground) owing to the substrate after the epitaxial loayer sequence that is placed in emitted radiation.
Influenced to optical near-field effect high level the output couple efficiency in the film LED.The advantage of Application Optics near-field effect is to have improved the radial component by the coupling that semiconductor is exported that produces light.Thin film chip described herein is characterised in that and surpasses 70% high output couple efficiency.
The active region for example has usually, and form is a plurality of sublayers of single quantum well structure or multiple quantum trap structure.
Semiconductor body have first conduction type at least one first semiconductor layer, second conduction type at least one second semiconductor layer and be disposed in therebetween active region.First semiconductor layer preferably p mixes, and second semiconductor layer preferably n mix.These semiconductor layers are preferably transparent, are transparent for the radiation that is produced in the active region just.
Semiconductor body for example can comprise the barrier layer, and this barrier layer is disposed between first semiconductor layer and the reflector, and for example works as the charge carrier diffusion barrier, just stops charge carrier to be overflowed from first semiconductor layer on the direction in reflector.Carrier barrier layer is preferably semiconductive to small part, and can be included among the flexible program A1.Carrier barrier layer is transparent for the radiation that is produced in the active region preferably.
The semiconductor body preferably epitaxially grown layer structure with chip is identical.On the growth substrates that exists as wafer, the layer of the semiconductor body of having grown.At first preferably extension is separated second semiconductor layer that n mixes.In addition, epitaxial growth one after the other first semiconductor layer that mixes of the sublayer of active region or active region, p and carrier barrier layer in case of necessity.After this, preferably apply the reflector by sputter or evaporation.
The reflector is metal level preferably.Preferably broadband high reflection of reflector, wherein, at least 70%, preferably at least 80% incident light is for example reflected in this reflector.For example, the reflector produces by Ag, Au, Pt or Al and/or by two kinds alloy in these metals at least.The reflector also can be to have a plurality of layers the multilayer sequence that is made of different above-mentioned metal or alloy.
The layer complex (Schichtenver bund) that comprises epitaxial loayer sequence, growth substrates and reflector preferably fixedlyed connected with carrier by meltable adhesive, this carrier is optimised aspect electricity and/or thermal characteristics, and does not claim for the optical characteristics of this carrier.That carrier preferably conducts electricity or be semiconductive at least.For example germanium, GaAs, SiC, AlN or Si are suitable for as carrier material.The surface of the orientating reflex layer of carrier is the plane preferably., with after carrier is connected growth substrates is thrown off from semiconductor body at layer complex.
At least one can be set between reflector and carrier increase attached layer (Haftvermittlungs-schicht).Preferably the attached layer that increases of conduction is connected carrier with the epitaxial loayer sequence, and wherein, the reflector is towards this carrier.This increases the metal level that attached layer especially can for example be made of PbSn (scolder), AuGe, AuBe, AuSi, Sn, In or PdIn.By for example comprise Ti and/or W, can protect the reflector towards the diffusion impervious layer that increases attached layer.Diffusion impervious layer stops material to penetrate in the reflector from increase attached layer.
Layer, the especially active region that all of light-emitting diode chip for backlight unit are described here and the semiconductor layer of semiconductor body can be made up of a plurality of sublayers respectively.
Semiconductor body comprises the output coupling layer with output coupling surface.Radiation profiles in the output coupling layer has preferred orientations.The output coupling layer is preferably identical with second semiconductor layer that for example n mixes.For example first semiconductor layer of p doping preferably is disposed between reflector and the active region.
With the reflector arrange so near light source, be the active region so that when interfering, the optical near-field effect obviously works.Pass through that produced and the interference light wave that is reflected, influenced the spontaneous emission in the active region, especially influenced the life-span of the recombinant of radiation, and therefore influenced the internal quantum in the layer that produces light.Some minute surface distance (for example λ/4,3 λ/4,5 λ/4) apart from active layer occurs along with the raising of internal quantum, and these minute surfaces are apart from producing favourable (relevant with angle) radiation characteristic.
Distance between minute surface and the light source for example is 2 λ to the maximum, wherein, and λ=λ
0/ n is the optical wavelength in the light medium (being semiconductor body here), and λ
0It is the optical wavelength in the vacuum.In flexible program, the layer of generation light and the distance between the reflector are less than 1.75 λ.In other favourable flexible program, this distance is less than 1.5 λ.Little distance has the following advantages, i.e. spontaneous emission by being produced in the active region and control the active region by the reciprocation of minute surface institute radiation reflected.
By light source produced and can some distance between light source and minute surface interfere textural by minute surface institute radiation reflected.For example in the radiation on the interface that impinges perpendicularly on the light medium, if the distance between light source and the minute surface is (2m+1) λ/4n, the maximum of radiation profiles then appears, wherein, n is the refractive index of light medium, and m=0,1,2... have illustrated the order (Ordnung) of output coupling.When zeroth order output coupling, be substantially perpendicular to all photons of radiation in the cone of exporting coupled interface at its rotation axes of symmetry.When the output coupling of first rank, there be the additional beam of radiation (Abstrahlkeule) bigger with the angle of the normal of exporting coupling surface.When the output coupling of m rank, there be m additional this beam of radiation.
Produce the layer of light and the distance that is essentially (2m+1) λ/4 between the reflector by adjusting, realized the directed radiation of active region, the radiation characteristic of this active region departs from the Lang Baite radiation characteristic, and this active region has the zone that has high strength and low intensive arranged alternate.Select the distance of minute surface like this, and therefore also within semiconductor, so regulate radiation characteristic, so that high radial component is positioned within the critical angle of total reflection when be mapped on the interface of exporting coupling light the first time apart from the layer of generation light.
Distance between reflector and the active region for example in different flexible programs is:
1) 0.16 λ to 0.28 λ, i.e. about λ/4; Radiation profiles has a preferred orientations perpendicular to the output coupling surface;
2) 0.63 λ and 0.78 λ, i.e. about 3 λ/4; Radiation profiles has two preferred orientations, is perpendicular to the preferred orientations of output coupling surface and the preferred orientations of relative this output coupling surface inclination or rather;
3) 1.15 λ and 1.38 λ, i.e. about 5 λ/4; Radiation profiles has three preferred orientations, and a preferred orientations is perpendicular to the output coupling surface, and two preferred orientations should tilt by the output coupling surface relatively.
The wavelength of the radiation of coupling of exporting can be arranged in infrared ray wave band, visible wave band or ultraviolet wave band.Apparent wavelength and deciding, semiconductor body can be made based on different semiconductor material system.For example based on In
xGa
yAl
1xyThe semiconductor body of As is suitable for the radiation of long wave, based on I n
xGa
yAl
1xyThe semiconductor body of P for example is suitable for visible redness to yellow radiation, and based on In
xGa
yAl
1xyThe semiconductor body of N for example is suitable for visible (green extremely blueness) or the UV radiation of shortwave, wherein, is suitable for 0≤y≤1 and 0≤y≤1.The spectral width of the radiation of overflowing for example can be for 15 to 40nm., the half breadth of the spectrum of the radiation that is produced is not limited to illustrated scope.
Preferably the bed thickness with the p layer is identical to produce the layer of light and the distance between the reflector.
In flexible program, second semiconductor layer has the output coupling surface on plane.In this case, the radiation characteristic of the light of overflowing from chip has departed from the Lang Baite radiation characteristic, and has high radiation density at least one preferred direction, and has small radiation density in other angular range.
In other flexible program, make the output coupling surface of second semiconductor layer coarse like this, do not export radiation diffusion on different directions of coupling when making on being mapped to this interface and return in this semiconductor.Avoid so-called waveguiding effect by the redistribution radiation direction, and therefore improved output couple efficiency.The radiation characteristic of the radiation of overflowing from chip in this case, is bright Bert formula basically.
Can arrange second semiconductor layer between active region and elimination reflector, the thickness in this elimination reflector equals quarter-wave approx.Eliminate preferably dielectric layer of reflector, this dielectric layer is applied to after having removed growth substrates on the output coupling surface of semiconductor body.
In optics, light-emitting diode chip for backlight unit preferably is arranged in the recess of housing, wherein, this recess can have the surface of reflecting.Light-emitting diode chip for backlight unit can be encapsulated in this recess with filler.Be used for the resin (for example epoxy resin or silicones) that the height packaging film chip, refractive index n＞1.55 reflect by application, can improve the output couple efficiency of optics.
Below elaborate the present invention by embodiment and affiliated accompanying drawing.Accompanying drawing shows various embodiment of the present invention by the diagrammatic sketch of schematic and not to scale (NTS).Part identical or same function is represented with identical reference symbol.
Fig. 1 schematically shows the exemplary film LED chip of the output coupling surface with plane;
Fig. 2 schematically shows to have the semiconductor body that comprises the barrier layer and has the film LED chip of eliminating the reflector;
Fig. 3 schematically shows the film LED chip with the output coupling surface that is roughened;
Fig. 4 schematically shows the optics of tool led chip.
Fig. 1 schematically part shows the exemplary film LED chip 100 with carrier 6 and sandwich construction 10.Between carrier 6 and sandwich construction 10, arranged and increased attached layer 5.Sandwich construction 10 comprises the radiative active region 3 between second semiconductor layer 2 of first semiconductor layer 1 that is disposed in the p conducting and n conducting.First semiconductor layer 1 is disposed between active region 3 and the metallic reflector 4.The reflector 4 of conduction not only as minute surface, but also work as the electric contacting layer of first semiconductor layer.Protect reflector 4 by the diffusion impervious layer 45 that is disposed in reflector 4 and increase between the attached layer 5.First and second semiconductor layers 1 and 2 and active region 3 constituted semiconductor body 123 jointly.This semiconductor body 123 has constituted sandwich construction 10 jointly with diffusion impervious layer 45 and reflector 4.
In the technology that is used for making this film LED chip, on the unshowned here growth substrates, extension ground produces second semiconductor layer 2, active region 3 and first semiconductor layer 1 in succession.For example reflector 4 is coated on this epitaxial layer structure by sputter or evaporation.By increasing attached layer 5 sandwich construction 10 is connected with the carrier of for example being made by Ge or have Ge on major part 6.After this remove growth substrates.After having removed this substrate, constituted the output coupling layer towards second semiconductor layer 2 of growth substrates, and the surface in the away from active district 3 of this output coupling layer constituted output coupling surface 20, this output coupling surface 20 is the plane in the present embodiment.
In Fig. 1, show the radiation that in active region 3, produced and by the direction of propagation of 4 radiation reflected in reflector by arrow 7 or 70.The light that interference produced by two radial components 7 and 70 is overflowed from sandwich construction 10 on the direction that deviates from carrier 6.
Come distance between accommodation reflex layer 4 and the active region 3, that in this flexible program, equal the thickness of first semiconductor layer 1 like this, make from the radiation of active region 3 with interfere by 4 radiation reflected in reflector, and make and interfere the life-span of the recombinant that influences the radiation in the active region 3 by this.
The near-field effect of being utilized in illustrated film LED chip is can be with cavity effect, just compare with the fluctuation effect (Welleneffekten) that occurs in optical resonantor (resonant cavity).Can within the semiconductor that produces light, so regulate its radiation characteristic by these effects, so that most of photon is exported on the interface of coupling with the arrival of the angle under the angle that is positioned at total reflection.Thus, in the time of on being mapped to for the first time the interface (=output coupling surface 20) of exporting coupling, from chip, export the part of the maximum possible of the radiation that has been coupled.Have only sub-fraction to be reflected back toward in the semiconductor 1,2,3.Before this part light arrived on the interface of exporting coupling again, this part light has been subjected to the loss of reflex time on reflector 4 and also owing to the absorption again in the active region 3 is subjected to loss, the quantum efficiency of this active region 3 only is about 50%.Therefore reduced recirculation rate significantly by in film LED chip, using cavity effect.
Other advantage of application cavity effect is to influence the radiation characteristic outside the semiconductor in film LED.How and minute surface and produce distance dependent between the layer of light according to the angular distribution of the photon within the semiconductor is, (on the output coupling surface that is not roughened) can change the radiation characteristic outside the semiconductor, and especially realizes having the radiation profiles of preferred orientations.
For wavelength X
0=455nm is (corresponding to the radiation of the wavelength X in the semiconductor of refractive index n=2.5=182nm), layer preferred value apart from d apart from the reflector that produces light is about d=40nm at zeroth order output coupling, be about d=130nm at the output coupling of first rank, and be about d=230nm at the output coupling of second rank.
These the value when zeroth order corresponding to d=0.22 λ, when first rank corresponding to d=0.71 λ, and when second rank corresponding to d=1.26 λ.For other wavelength, must correspondingly demarcate d.
The order of output coupling is low more, and the efficient of film LED chip is just high more.If for example be coupled to the output of first rank, then obtain about 25% efficient raising from second rank output coupling transform.In the preferred variation scheme, therefore regulated zeroth order output coupling.
Suitable concrete structure based on the film LED chip of GaN has following sequence of layer:
-front side-contact metallization
-highly doped GaN:Si (bed thickness: 700-1500nm)
-more low-doped a little GaN:Si (bed thickness: 4000nm)
-plain GaN (bed thickness: 30nm)
-InGaN quantum well (bed thickness: about 1nm; In content about 10%)
-barrier layer (the plain GaN of the about 5nm of GaN+ that the plain GaN+6-7nm Si of about 5nm mixes)
-InGaN quantum well as above
-barrier layer as above
-InGaN quantum well as above
-barrier layer as above
-InGaN quantum well (the about 2-3nm of bed thickness, In content about 20%)
-plain GaN layer (the about 5-10nm of bed thickness)
AlGaN layer (the bed thickness 20-40nm that-p mixes; Electronic barrier layer; Al content 10-25%)
The GaN:Mg (terminating layer) that-p mixes
-minute surface (the Pt layer do not seal+other layer+articulamentum of the Ag layer+diffusion barrier+in case of necessity)
-Ge carrier
In second embodiment according to Fig. 2, be different from embodiment according to Fig. 1, between the semiconductor layer (i.e. first semiconductor layer 1) of active region 3 and orientating reflex layer 4, arranged at least one other, be preferably thin carrier barrier layer 11.Carrier barrier layer 11 is the part of semiconductor body preferably, and is epitaxially grown and semiconductive therefore.
Among this external embodiment according to Fig. 2, be provided with passivation layer 8 on second semiconductor layer 2, this passivation layer 8 is constructed to eliminate the reflector by regulating certain thickness in suitable improvement project.After removing growth substrates, for example can apply this elimination reflector by separating.This elimination reflector 8 is not that extension produces, and for example is made up of silica or silicon nitride.
Be different from embodiment, have the output coupling surface 20 that is roughened according to the embodiment of the film LED chip of Fig. 3 according to Fig. 2.Be the gain that has weakened by utilizing cavity effect to reach thus micro-ly.Turn out to be favourable by active layer apart from the radiation characteristic that the distance fluctuation of minute surface influences only micro-ly.
Figure 4 illustrates optics, this optics for example comprises the light-emitting diode chip for backlight unit that adds housing 100 according to the embodiment that is introduced in Fig. 1 to 3.Light-emitting diode chip for backlight unit 100 is installed on the lead frame 92, and is cut off in the recess of housing 91.The recess of housing 91 preferably has catoptrical surface.Light-emitting diode chip for backlight unit encapsulates with filler 90.
The present invention of course not is limited to these embodiment by the exemplary illustrated by embodiment.Or rather, the present invention includes any new feature and the combination in any of these features, this has comprised any combination of the single feature of different claims or different embodiment especially mutually, even relevant feature or relevant combination itself are not described in claim or embodiment significantly.
Claims (15)
1. thin-film light emitting diode chip,
Wherein, reflector (4) and produce distance between the active region (3) of light at 0.16 λ between 0.28 λ, perhaps at 0.63 λ between 0.78 λ, perhaps at 1.15 λ between 1.38 λ, wherein, λ is the optical wavelength in the described semiconductor body, so that the radiation of sending in the direction of the radiation of described thin-film light emitting diode chip output coupling surface from described active region (3) with interfere by described reflector (4) institute radiation reflected, and influence the internal quantum of described active region (3) thus, the feasible radiation characteristic that realizes described active region (3) with at least one preferred orientations, and
Wherein, the output coupling layer is semiconductive.
2. by the described thin-film light emitting diode chip of claim 1, has the semiconductor body (1,2,3) that comprises described active region (3) and described output coupling layer.
3. by the described thin-film light emitting diode chip of claim 2, this thin-film light emitting diode chip does not comprise resonator.
4. press claim 2 or 3 described thin-film light emitting diode chips,
Wherein, described active region (3) are disposed between second semiconductor layer (2) of first semiconductor layer (1) of first conduction type and second conduction type,
Wherein, described second semiconductor layer (2) constituted described output coupling layer and
Wherein, described first semiconductor layer (1) is disposed between described reflector (4) and described active region (3).
5. press the described thin-film light emitting diode chip of claim 4,
Wherein, described second semiconductor layer (2) is disposed in described active region (3) and eliminates between the reflector (7).
6. by one of claim 1 to 3 described thin-film light emitting diode chip, wherein, ground, broadband, described reflector (4) reflects.
7. by the described thin-film light emitting diode chip of claim 6, wherein, described reflector (4) are metal levels.
8. by the described thin-film light emitting diode chip of claim 4, wherein, the distance between described reflector (4) and described active region (3) equals the thickness of described first semiconductor layer (1).
9. by one of claim 1 to 3 described thin-film light emitting diode chip, wherein, the distance between described reflector (4) and described active region (3) is less than 2 λ, and wherein, λ is the optical wavelength in the described semiconductor body.
10. by one of claim 1 to 3 described thin-film light emitting diode chip, wherein, described semiconductor body comprises GaN or GaN compound.
11. by one of claim 1 to 3 described thin-film light emitting diode chip, have the carrier (6) towards described reflector (4), this carrier (6) is not the growth substrates of described semiconductor body (1,2,3).
12., wherein, between described reflector (4) and described carrier (6), be provided with at least one and increase attached layer (5) by the described thin-film light emitting diode chip of claim 11.
13. by one of claim 2 to 3 described thin-film light emitting diode chip, wherein, described semiconductor body (1,2,3) has the output coupling surface on plane.
14. by one of claim 2 to 3 described thin-film light emitting diode chip, wherein, described semiconductor body (1,2,3) has the output coupling surface that is roughened.
15. by the described thin-film light emitting diode chip of claim 14, wherein, described carrier (6) conducts electricity, and described first semiconductor layer (1) contacts by this carrier (6).
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|---|---|---|---|
| DE102004018484.4 | 2004-04-14 | ||
| DE102004018484 | 2004-04-14 | ||
| DE102005016592.3 | 2005-04-11 |
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| CN100433387C true CN100433387C (en) | 2008-11-12 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102006035627A1 (en) | 2006-07-31 | 2008-02-07 | Osram Opto Semiconductors Gmbh | LED semiconductor body |
| WO2009106063A1 (en) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Monolithic, optoelectronic semi-conductor body and method for the production thereof |
| DE102008011848A1 (en) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body and method for producing such |
| KR101064011B1 (en) * | 2009-04-28 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting device and manufacturing method |
| US8084776B2 (en) * | 2010-02-25 | 2011-12-27 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package, and lighting system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810674A2 (en) * | 1996-05-31 | 1997-12-03 | Sumitomo Electric Industries, Ltd. | Light emitting device, wafer for light emitting device, and method of preparing the same |
| DE19921987A1 (en) * | 1998-05-13 | 1999-11-18 | Toyoda Gosei Kk | Light-radiating flip chip semiconductor device |
| EP0977277A1 (en) * | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| CN1460300A (en) * | 2001-02-21 | 2003-12-03 | 索尼公司 | Semiconductor light-emitting device, mfg. method thereof and electrode layer connection structure |
| US20040026703A1 (en) * | 2002-08-07 | 2004-02-12 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
| US20040061101A1 (en) * | 2001-01-31 | 2004-04-01 | Nobuhiko Noto | Light emitting device |
-
2005
- 2005-04-12 TW TW094111429A patent/TWI254469B/en active
- 2005-04-14 CN CNB2005800112896A patent/CN100433387C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810674A2 (en) * | 1996-05-31 | 1997-12-03 | Sumitomo Electric Industries, Ltd. | Light emitting device, wafer for light emitting device, and method of preparing the same |
| DE19921987A1 (en) * | 1998-05-13 | 1999-11-18 | Toyoda Gosei Kk | Light-radiating flip chip semiconductor device |
| EP0977277A1 (en) * | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| US20040061101A1 (en) * | 2001-01-31 | 2004-04-01 | Nobuhiko Noto | Light emitting device |
| CN1460300A (en) * | 2001-02-21 | 2003-12-03 | 索尼公司 | Semiconductor light-emitting device, mfg. method thereof and electrode layer connection structure |
| US20040026703A1 (en) * | 2002-08-07 | 2004-02-12 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
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| TW200536162A (en) | 2005-11-01 |
| TWI254469B (en) | 2006-05-01 |
| CN1943046A (en) | 2007-04-04 |
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