CN100430814C - Control system capable of adjusting wavelengh of laser and method thereof - Google Patents
Control system capable of adjusting wavelengh of laser and method thereof Download PDFInfo
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- CN100430814C CN100430814C CNB2006100600449A CN200610060044A CN100430814C CN 100430814 C CN100430814 C CN 100430814C CN B2006100600449 A CNB2006100600449 A CN B2006100600449A CN 200610060044 A CN200610060044 A CN 200610060044A CN 100430814 C CN100430814 C CN 100430814C
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Abstract
This invention discloses one control system and method of resonance laser wavelength, which comprises the following steps: a, selecting the designed DFB laser through wavelength selection module; b, processing temperature control through temperature or wavelength control circuit and adjusting the laser output for designed laser; c, calibrating the laser path of the designed wavelength through MEMS calibration control circuit.
Description
Technical field
The present invention relates to digital fiber transmission system technical field, particularly relate to a kind of control system and method thereof of tunable laser wavelength.
Background technology
At DWDM (Dense Wave Division Multiplexing; dense wave division multipurpose) in the system; DFB (Distributed Feed Back; distributed Feedback) the humorous laser instrument of array adjustable is at ROADM (Reconfigurable Optical Add/Drop Multiplexer; Reconfigurable Optical Add/drop Multiplexer), field such as wavelength protection, spare parts for engineering project has broad application prospects; standby quantity of light source and specification in can the minimizing system; be easy to form standardized communication system, the operation cost of system and maintenance cost can be reduced significantly.But the commercialization of tunable DFB array laser just just starts, and does not form unified technical scheme as yet, and the scheme that each producer adopts is not quite similar.Can be divided into 3 kinds substantially: DFB array+MEMS (Micro Electro Mechanical Systems, microelectromechanical systems) tilting mirror, SG-DBR (Sampled Grating Distributed Bragg Reflector, the distributed loudspeaker lattice of sampling grating reflection laser) and exocoel (External Cavity Laser, ECL) formula.Wherein the DFB array laser adopts comparatively ripe DFB array laser and MEMS technology based on the DFB array+MEMS tilting mirror type is tunable, and its reliability has stood the test in market, is a kind of proven technique scheme.For example the humorous laser instrument of DFB array adjustable of Santur company is compared with the single wavelength DFB type D laser instruments of a large amount of uses now, its size dimension is all more similar to integrated complexity, many dfb laser array have just been comprised, as shown in Figure 1, by rotating MEMS tilting mirror 102, select different Distributed Feedback Lasers, its output wavelength scope will be different, make stable output wavelength output at assigned I TU (International Telecommunication Union by temperature control simultaneously, International Telecommunications Union (ITU)) standard wavelength reaches tunable purpose.Regulate temperature control wavelength owing to adopt; therefore compare with other two class tunable laser; its wavelength is longer relatively switching time; generally in level second; do not fit in quick protective switch and use, still still can yet be regarded as a kind of reliability height, performance height, lower-cost solution in the field of ROADM, spare parts for engineering project.
Traditional single wavelength Distributed Feedback Laser of comparing, the control of the humorous laser instrument of DFB array adjustable is more complex; And the solution that standard is not arranged at present as yet.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of control system and method thereof of tunable laser wavelength, is used to realize the simple optimizing control to DFB array+MEMS type tunable laser.
To achieve these goals, the invention provides a kind of control system of tunable laser wavelength, be applicable to DFB+MEMS type tunable laser, comprise and be provided with the TEC controller, 4 quadrant detector, the DFB array laser instrument of MEMS tilting mirror, be provided with wavelength and select module, temperature/wavelength control module, the CPU/MCU of MEMS control module, TEC control circuit and MEMS driving circuit, described wavelength selects module to connect described DFB array laser instrument, be used to select one to specify Distributed Feedback Laser, also comprise one temperature/wavelength control loop, one MEMS collimates control loop;
Described temperature/wavelength control loop is carried out temperature control by described temperature/wavelength control module, described TEC control circuit to described TEC controller, adjusts the laser of described appointment Distributed Feedback Laser output specified wavelength;
Described MEMS collimation control loop is controlled described MEMS drive circuit works by described MEMS control module, and described MEMS driving circuit drives described MEMS tilting mirror and rotates, and realizes the beam path alignment of the laser of described specified wavelength.
The control system of described tunable laser wavelength, wherein, described wavelength selects module to select described appointment Distributed Feedback Laser by a communication interface.
The control system of described tunable laser wavelength, wherein, comprise that also one is integrated in a TEC refrigerator and the temperature sensor in the described DFB array laser instrument, the steering order that described TEC refrigerator is used to accept described TEC controller heats described DFB array laser instrument or refrigeration control, and described temperature sensor is used to respond to the temperature variation of described DFB array laser instrument.
The control system of described tunable laser wavelength, wherein, comprise that also one is arranged at the wavelength locking control loop on the described MCU, be used for being arranged at by detection the temperature of Etalon on the described DFB array laser instrument, control is finished wavelength locking corresponding to the temperature assembly of described Etalon.
To achieve these goals, the present invention also provides a kind of control method of tunable laser wavelength of control system as described, it is characterized in that, comprising:
Step 2 is carried out temperature control by temperature/wavelength control loop to described appointment Distributed Feedback Laser, adjusts the laser of described appointment Distributed Feedback Laser output specified wavelength;
Step 3 is carried out beam path alignment by MEMS collimation control loop to the laser of described specified wavelength.
The control method of described tunable laser wavelength wherein, in the described step 1, comprises that also one selects the step of described appointment Distributed Feedback Laser by a communication interface.
The control method of described tunable laser wavelength, wherein, in the described step 1, also comprise-when receiving power-on reset signal or wavelength switching command, the step of described system closing DFB array laser instrument and MEMS tilting mirror.
The control method of described tunable laser wavelength wherein, also comprises one by judging the current step that whether has temperature warning information to determine whether entering temperature/wavelength control loop of described system between described step 1, the step 2.
The control method of described tunable laser wavelength wherein, also comprises one by judging the current step that whether has the collimation warning information to determine whether entering MEMS collimation control loop of described system between described step 2, the step 3.
The control method of described tunable laser wavelength wherein, in the described step 3, also comprises one after beam path alignment is finished, and described system receives that temperature warning information returns the step that described step 2 is carried out.
Adopt the inventive method, owing to take cpu system, the application software control method need not nonshared control unit; In addition can be flexibly carry out parameter adjustment, reach optimum control according to the wavelength characteristic of controll plant; Simplify Hardware Design, saved hardware cost, improved dirigibility, versatility.
Description of drawings
Fig. 1 is DFB array DFB array laser and an interface synoptic diagram in the prior art;
Fig. 2 is a basic structure synoptic diagram of the present invention;
Fig. 3 is the control method process flow diagram of tunable laser wavelength of the present invention;
Fig. 4 is the overall control flow chart of the present invention;
Fig. 5 is temperature of the present invention/wavelength control process flow diagram;
Fig. 6 is MEMS collimation control flow chart of the present invention;
Fig. 7 is the circuit structure diagram of the embodiment of the invention one;
Fig. 8 is the circuit structure diagram of the embodiment of the invention two.
Embodiment
Be described in detail below in conjunction with the enforcement of the drawings and specific embodiments technical scheme of the present invention, but not as a limitation of the invention.
Figure 1 shows that DFB array DFB array laser and interface synoptic diagram in the prior art.In general, the humorous laser instrument 10 of DFB array adjustable comprises following components: DFB array laser 101, MEMS tilting mirror 102,4 quadrant detector 103, temperature controller (TEC) 104 and DFB array laser are selected circuit 105 etc.DFB array laser 101 is many dfb laser array making in same substrate.Each Distributed Feedback Laser is operated in certain wavelength coverage (being generally 400GHz), similar with common single wavelength Distributed Feedback Laser, in this working range, output light wavelength is by control Distributed Feedback Laser temperature, regulate output wavelength, make it to be operated on the specific wavelength of hope.Every Distributed Feedback Laser covers different wavelength coverages, therefore, switches any output wavelength, need at first select the Distributed Feedback Laser of respective wavelength scope, then by regulating temperature, obtains required wavelength output.Compare with common single wavelength Distributed Feedback Laser, the main difference of the humorous laser instrument 10 of DFB array adjustable in control is the control of the collimated light path of the selection of many Distributed Feedback Lasers and different Distributed Feedback Lasers.For different Distributed Feedback Lasers, need with the output optical alignment of Distributed Feedback Laser, and to be coupled in the output optical fibre 108 by adjusting MEMS tilting mirror 102.The laser that DFB array laser 101 sends incides on the MEMS tilting mirror 102 after collimating by collimation lens.MEMS tilting mirror 102 is the rotary catoptrons of a kind of bidimensional.By changing the voltage of MEMS electrode (MEMS X+, MEMS X-, MEMS Y+, MEMS Y-), can control the anglec of rotation of MEMS tilting mirror 102.Pass through the reflection of MEMS tilting mirror 102, and make laser be divided into two bundles by optical branching device 106: wherein a part is coupled to output optical fibre 108 by plus lens 107; Another part exports 4 quadrant detector 103 to, by 4 quadrant detector 103, can detect the locus of laser facula, by regulating the anglec of rotation of MEMS tilting mirror 102 both directions, makes hot spot drop on the center of 4 quadrant detector 103.This moment also just corresponding the hot spot of another part light beam aim at the center of output optical fibre 108.
Figure 2 shows that basic structure synoptic diagram of the present invention.This basic structure comprises: DFB array laser instrument 21, TEC (temperature) control circuit 201, wavelength are selected module 202, temperature/wavelength control module 203, MEMS control module 204 and MEMS driving circuit 205.Wherein, also be provided with TEC (temperature) controller 211,4 quadrant detector 212 and MEMS tilting mirror 213 on the DFB array laser instrument 21; Wavelength selects module 202, temperature/wavelength control module 203, MEMS control module 204 to be arranged on CPU (Central Processing Unit, central processing unit) or MCU (Micro-Controller Unit, the microcontroller) control system 22.
Have one in this structure and select circuit: Distributed Feedback Laser is selected circuit 11, and this circuit 11 selects module 202 to select corresponding Distributed Feedback Laser by (LS CLK, LS DATE) communication interface 33 by wavelength.
There are two control loops in this structure: temperature/wavelength control loop 12 and MEMS collimation control loop 13, finish control jointly to this DFB array+MEMS type tunable laser.In temperature/wavelength control loop 12, temperature/wavelength control module 203 is carried out temperature control by 201 pairs of TEC controllers of TEC control circuit 211, thereby makes the appointment Distributed Feedback Laser of selecting be operated in the temperature spot of appointment, and then the laser of output specified wavelength; In the MEMS collimation control loop 13, MEMS driving circuit 205 is worked under 204 controls of MEMS control module, and drives 213 rotations of MEMS tilting mirror, thereby adjusts the beam path alignment of specified wavelength laser.
Wavelength is adjusted by the control temperature in temperature/wavelength control loop 12; MEMS collimation control loop 13 rotates the realization beam path alignment by adjusting MEMS tilting mirror 213.In real work, these two loops cooperatively interact, and realize the wavelength control of tunable laser jointly.
Figure 3 shows that the control method process flow diagram of tunable laser wavelength of the present invention.And in conjunction with shown in Fig. 1,2, this control method flow process specifically comprises the steps:
When electrification reset or wavelength switching command were received by system, for guaranteeing safety, system can close DFB array laser instrument 21 earlier; In addition, system adjusts MEMS tilting mirror 213, makes the light path no-output.System takes out the wavelength channel of setting from the significant data district then, and wavelength selects module 202 to select corresponding Distributed Feedback Laser by (LS CLK, LS DATE) communication interface 33.
After selecting to specify Distributed Feedback Laser, carry out temperature control and make the appointment Distributed Feedback Laser be operated in the temperature spot of appointment, thereby can produce correct specified wavelength, begin to enter temperature/wavelength control loop 12 this moment.
The setting that realize assigned temperature by TEC control circuit 201 in temperature/wavelength control loop 12; Be integrated with TEC refrigerator and temperature sensor 214 in DFB array laser instrument 21 inside, system determines whether reaching predetermined temperature by the error that detects actual temperature and design temperature.Wherein temperature sensor is used to respond to the temperature variation of DFB array laser instrument 21, and the steering order that the TEC refrigerator is used to accept TEC controller 211 heats DFB array laser instrument 21 or refrigeration control.
After the temperature locking was finished, the laser of the Distributed Feedback Laser output specified wavelength of appointment entered MEMS collimation control loop 13 this moment; By 4 quadrant detector 212, can detect the locus of laser facula, after mould/number conversion AD gathers,, make hot spot drop on the center of 4 quadrant detector 212 by regulating the anglec of rotation of MEMS tilting mirror 213 both directions; At this moment, the hot spot of also just corresponding another part light beam is aimed at the center of output optical fibre 108.
Figure 4 shows that the overall control flow chart of the present invention.And in conjunction with shown in Figure 2, this flow process is to finish the overall system control flow that the complete control function of the present invention is carried out, and basic process comprises the steps:
In step 404, after MEMS collimation control loop 13 was finished the control of MEMS collimation, if passage switching command or power-on reset signal are received by system, then system returned step 401; If system does not detect any warning information, then return step 402 and carry out the current state judgement; If system detects temperature warning information, then return step 403 and carry out temperature/wavelength control.
Figure 5 shows that temperature of the present invention/wavelength control process flow diagram.And in conjunction with shown in Figure 2, this control flow specifically comprises the steps:
See also shown in Figure 6ly, be MEMS collimation control flow chart of the present invention.And in conjunction with shown in Figure 2, this control flow specifically comprises the steps:
Step 605 judges whether locking, if step 603 is then returned in locking; If non-locking, then step continues to carry out; And
Step 606 by D/A switch DA output DA, drives MEMS tilting mirror 213 high pressure, that is, in order to guarantee 213 work of MEMS tilting mirror, it is controlled, and makes it reach voltage near 200V.
Shown in Fig. 7,8, be respectively the circuit structure diagram of the embodiment of the invention one, two.And in conjunction with shown in Figure 2, embodiment two shown in Figure 8 is with the difference of embodiment one shown in Figure 7, has increased the wavelength locking function in embodiment two.This functional requirement increases Etalon and corresponding TEC assembly 231 in DFB array laser instrument 21, corresponding with it, at MCU (Micro-Controller Unit, microcontroller) to increase wavelength locking control loop 232 in the control system 22, promptly, after system finished temperature/wavelength control, by the temperature of detection Etalon, and then the corresponding TEC assembly of control was finished the wavelength locking task; This function is necessary in needing 50G wavelength-division system at interval.In addition, the mark 241 among Fig. 7,8 is A/D converter ADC, and 242 is D/A DAC, is respectively applied for to realize mould/number conversion AD among Fig. 5,6, D/A switch DA.
Adopt the method for the invention, owing to take the CPU/MCU system, the application software control method need not nonshared control unit; Can carry out parameter adjustment flexibly according to the wavelength characteristic of controll plant in addition, reach optimum control; Simplify Hardware Design, saved hardware cost, improved dirigibility, versatility.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (10)
1, a kind of control system of tunable laser wavelength, be applicable to DFB+MEMS type tunable laser, comprise the DFB array laser instrument that is provided with TEC controller, 4 quadrant detector, MEMS tilting mirror, CPU/MCU, TEC control circuit and the MEMS driving circuit that is provided with wavelength selection module, temperature/wavelength control module, MEMS control module, described wavelength selects module to connect described DFB array laser instrument, be used to select one to specify Distributed Feedback Laser, it is characterized in that, comprise that also one temperature/wavelength control loop, a MEMS collimate control loop;
Described temperature/wavelength control loop is carried out temperature control by described temperature/wavelength control module, described TEC control circuit to described TEC controller, adjusts the laser of described appointment Distributed Feedback Laser output specified wavelength;
Described MEMS collimation control loop is controlled described MEMS drive circuit works by described MEMS control module, and described MEMS driving circuit drives described MEMS tilting mirror and rotates, and realizes the beam path alignment of the laser of described specified wavelength.
2, the control system of tunable laser wavelength according to claim 1 is characterized in that, described wavelength selects module to select described appointment Distributed Feedback Laser by a communication interface.
3, the control system of tunable laser wavelength according to claim 1 and 2, it is characterized in that, comprise that also one is integrated in a TEC refrigerator and the temperature sensor in the described DFB array laser instrument, the steering order that described TEC refrigerator is used to accept described TEC controller heats described DFB array laser instrument or refrigeration control, and described temperature sensor is used to respond to the temperature variation of described DFB array laser instrument.
4, the control system of tunable laser wavelength according to claim 1 and 2, it is characterized in that, comprise that also one is arranged at the wavelength locking control loop on the described MCU, be used for being arranged at by detection the temperature of Etalon on the described DFB array laser instrument, control is finished wavelength locking corresponding to the temperature assembly of described Etalon.
5, a kind of control method of tunable laser wavelength of control system according to claim 1 is characterized in that, comprising:
Step 1 selects to specify Distributed Feedback Laser;
Step 2 is carried out temperature control by temperature/wavelength control loop to described appointment Distributed Feedback Laser, adjusts the laser of described appointment Distributed Feedback Laser output specified wavelength;
Step 3 is carried out beam path alignment by MEMS collimation control loop to the laser of described specified wavelength.
6, the control method of tunable laser wavelength according to claim 5 is characterized in that, in the described step 1, comprises that also one selects the step of described appointment Distributed Feedback Laser by a communication interface.
7, according to the control method of claim 5 or 6 described tunable laser wavelength, it is characterized in that, in the described step 1, also comprise one when receiving power-on reset signal or wavelength switching command, the step of described system closing DFB array laser instrument and MEMS tilting mirror.
8, according to the control method of claim 5 or 6 described tunable laser wavelength, it is characterized in that, also comprise one between described step 1, the step 2 by judging the current step that whether has temperature warning information to determine whether entering temperature/wavelength control loop of described system.
9, according to the control method of claim 5 or 6 described tunable laser wavelength, it is characterized in that, also comprise one between described step 2, the step 3 by judging the current step that whether has the collimation warning information to determine whether entering MEMS collimation control loop of described system.
10, according to the control method of claim 5 or 6 described tunable laser wavelength, it is characterized in that, in the described step 3, also comprise one after beam path alignment is finished, described system receives that temperature warning information returns the step that described step 2 is carried out.
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| CNB2006100600449A CN100430814C (en) | 2006-03-24 | 2006-03-24 | Control system capable of adjusting wavelengh of laser and method thereof |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447635B (en) * | 2007-11-27 | 2011-07-13 | 中兴通讯股份有限公司 | Method and device for switch control compatibility of different tunable lasers |
| CN102572621A (en) * | 2012-02-02 | 2012-07-11 | 中兴通讯股份有限公司 | Optical module and wavelength division multiplexing system |
| CN102566041A (en) * | 2012-02-20 | 2012-07-11 | 无锡微奥科技有限公司 | Electrothermic micro electro mechanical system (MEMS) micro mirror system |
| CN104466669A (en) * | 2013-09-23 | 2015-03-25 | 南京威宁锐克信息技术有限公司 | Tunable laser device |
| CN105300419B (en) * | 2015-12-03 | 2018-02-23 | 珠海市光辰科技有限公司 | A kind of fiber grating demodulation device based on semiconductor laser |
| CN105514781B (en) * | 2016-01-11 | 2019-09-10 | 深圳新飞通光电子技术有限公司 | Wavelength locker |
| CN106684703B (en) * | 2017-03-08 | 2019-12-31 | 成都优博创通信技术股份有限公司 | TWDM ONU wavelength control method and system and turn-off depth control circuit |
| CN111064520B (en) * | 2019-12-19 | 2021-06-04 | 成都优博创通信技术股份有限公司 | Optical module |
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| US20020064192A1 (en) * | 2000-08-09 | 2002-05-30 | Mark Missey | Tunable distributed feedback laser |
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| US20020064192A1 (en) * | 2000-08-09 | 2002-05-30 | Mark Missey | Tunable distributed feedback laser |
| US6839364B1 (en) * | 2000-09-29 | 2005-01-04 | Triquint Technology Holding Co. | Feedback control loop operating system for tunable source |
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