CN100428493C - Heat resistance structure on plastic substrate and forming method - Google Patents
Heat resistance structure on plastic substrate and forming method Download PDFInfo
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- CN100428493C CN100428493C CNB2004100888438A CN200410088843A CN100428493C CN 100428493 C CN100428493 C CN 100428493C CN B2004100888438 A CNB2004100888438 A CN B2004100888438A CN 200410088843 A CN200410088843 A CN 200410088843A CN 100428493 C CN100428493 C CN 100428493C
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Abstract
The present invention relates to a heat resisting structure on a plastic base plate, which is characterized in that the heat resisting structure comprises a plastic base plate, a multi-hole gap layer and a buffer layer, wherein the multi-hole gap layer is formed on the plastic base plate and is provided with a plurality of hollow oxides, the buffer layer is formed on the multi-hole gap layer, and the multi-hole layer can provide protection so as to prevent heat energy produced in the process of fabrication from damaging the plastic base plate. The present invention uses the method that the multi-hole gap structure is formed on the plastic base plate to enhance the heat endurance of the plastic base plate so as to obtain the purpose of forming a polysilicon film on the plastic base plate, is convenient to form a thin film transistor on the plastic base plate to fabricate a plane display, and obtains the purposes of lightness, thinness and flexing. In addition, the heat resisting structure on a plastic base plate is convenient to form an electronic element with high efficiency on the plastic base plate so as to reduce cost. The present invention uses the method that the multi-hole gap heat resisting structure is formed on the plastic base plate to obtain the purpose of smoothing the plastic base plate.
Description
Technical field
The present invention relates to heat insulation structure and formation method on a kind of plastic base, particularly relate to a kind of multi-pore structure oxide that utilizes and be formed on the plastic base, a kind of heat insulation structure and the formation method of the heat energy infringement plastic base that is produced to avoid in the manufacturing process.
Background technology
Development trend at following display, two important development trends are arranged, first is as the how low-cost display of making light, thin and deflection, second for the associated electronic components characteristic of wishing display can to have the electronics translational speed fast, characteristics such as reaction speed is fast also form main flow gradually so polysilicon membrane replaces amorphous silicon membrane.
Because flat-panel screens is made on the glass substrate more at present,,, then must change the material of substrate if will reach advantage light, thin, deflection though this kind manufacture method can realize large tracts of land and mass-produced advantage.Wherein the potentiality of plastic base and advantage are gazed at most.Though plastic base can satisfy gently, thin and deflection advantage, but in the manufacturing process of traditional polycrystalline SiTFT, owing to will convert amorphous silicon to polysilicon by laser tempering (Laser Annealing), so required making temperature is at least at 600 degree Celsius, but because glass transition temperature (the glasstransition temperature of plastic base, Tg) very low, so thermal endurance is not good, can't bear the stronger laser energy polysilicon membrane of directly on plastic base, growing up.
Even so, on the whole, the advantage of plastic base still is quite a lot of, so how to overcome in the manufacturing process pyrolytic damage to plastic base, the patent of input research and application also quite more than, U.S.Pat.No.5 for example, 817,550, this patent has disclosed and has a kind ofly formed polysilicon with low-energy laser on plastic base.This method is for forming earlier silicon dioxide layer on plastic base.And then deposition of amorphous silicon (a-Si) is on this silicon dioxide layer, and then with the excimer laser (308nm) of short pulse (short-pulse) chlorination xenon (XeCl), in less than ten million/one second (100ns) Production Time, convert this amorphous silicon to polysilicon layer.U.S.Pat.No.6 and for example, 680,485, this patent also is to have disclosed a kind of going up in low form plastic base (low-temperature plastic substrate) with low-energy laser to form polycrystalline SiTFT, this low temperature is no more than 250 degree Celsius.This method is about 0.1 to 5.0 micron for form a silicon dioxide layer thickness earlier on plastic base.And then deposit amorphous silicon (a-Si) that a thickness is about 10 to 500 nanometers on this silicon dioxide layer, then with at least one the excimer laser (308nm) of short pulse (short-pulse) chlorination xenon (XeCl), on this amorphous silicon layer, form local or polysilicon layer completely, and then carry out the making of thin-film transistor.
Comprehensive above-mentioned prior art, though can be so that the making temperature on the plastic base reduce, or need not use resistant to elevated temperatures plastic material, for example: poly-acid imide (Kapton).But still have following several shortcomings:
1) reduce laser energy and reduce the laser tempering time and can influence the grain size of polysilicon layer, with and element characteristic.
2) because prior art must form oxide layer earlier on this plastic base, be example with silicon dioxide, the silicon dioxide layer that form 4 microns on plastic base probably needs 30 to 40 minutes, badly influences batch process thus.
3) though in addition because thick oxide layer can reach heat insulation, but the thicker oxide layer of thickness its easily situation crisp and easy be full of cracks can make the more bad control of manufacturing process, and cause element to use.
Therefore, be badly in need of heat insulation structure and formation method on a kind of plastic base, to solve the shortcoming of above-mentioned prior art.
Summary of the invention
Technical problem to be solved by this invention is to provide heat insulation structure and the formation method on a kind of plastic base, and it utilizes multi-pore structure to be formed on the plastic base, improves the thermal endurance of plastic base, reaches the purpose that forms polysilicon membrane on plastic base.
Another technical problem to be solved by this invention is to provide heat insulation structure and the formation method on a kind of plastic base, utilize porous crack heat insulation structure to improve the plastic base thermal endurance, so that form thin-film transistor on this plastic base, make flat-panel screens, reach the purpose of light, thin and deflection.
The 3rd technical problem to be solved by this invention is to provide heat insulation structure and the formation method on a kind of plastic base, utilize porous crack heat insulation structure to improve the plastic base thermal endurance, so that form dynamical electronic component on this plastic base, reach the purpose that reduces cost.
The 4th technical problem to be solved by this invention is to provide heat insulation structure and the formation method on a kind of plastic base, utilizes porous crack heat insulation structure to be formed on the plastic base, reaches the purpose of smooth plastic base.
To achieve these goals, the invention provides the heat insulation structure on a kind of plastic base, its characteristics are, include: a plastic base; Pore layer more than one is formed on this plastic base, and these many pore layers have a plurality of hollow structure oxides, and those hollow structure oxides are to form this many pore layers via sol-gel process; And a resilient coating, this resilient coating is formed on these many pore layers; Wherein, these many pore layers heat energy that can provide protection to be produced to avoid in the manufacturing process damages this plastic base.
Above-mentioned this hollow structure oxide is spherical hollow structure, disc hollow structure or cylindrical hollow configuration.
Heat insulation structure on the above-mentioned plastic base, its characteristics be, cylindrical hollow configuration can be selected upright or on this plastic base one of them of couching.
Heat insulation structure on the above-mentioned plastic base, its characteristics are, also include a template layer, and it is formed between this plastic base and this many pore layers, and this template layer is for selecting one of silicon, titanium, zinc and aluminium.
Heat insulation structure on the above-mentioned plastic base, its characteristics are, also include a conductive layer, and it is formed between this plastic base and this template layer.
Heat insulation structure on the above-mentioned plastic base, its characteristics are also have a flatness layer and be formed on these many pore layers.
Heat insulation structure on the above-mentioned plastic base, its characteristics be, this flatness layer be a high molecular polymer and inorganic flatness layer one of them.
Heat insulation structure on the above-mentioned plastic base, its characteristics are also have an amorphous silicon layer on this resilient coating, can form a polysilicon layer by a heat treatment.
The present invention also provides the formation method of the heat insulation structure on a kind of plastic base, and its characteristics are that this heat insulation structure is formed on the plastic base, and this formation method includes the following step: step 1 forms a plurality of multi-pore structures on an anodic oxidation template; Step 2 is removed this anodic oxidation aluminium formwork; Step 3 should be coated formation pore layer more than on this plastic base by a plurality of multi-pore structures; And step 4, form a resilient coating on these many pore layers.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics be, this coating be for passing through sol-gel by a plurality of multi-pore structures, again by rotary coating on this plastic base.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics are that this multi-pore structure is for selecting one of Si oxide, titanium oxide, zinc oxide and aluminum oxide.
The present invention also provides the formation method of the heat insulation structure on a kind of plastic base, and its characteristics are that this heat insulation structure is formed on the plastic base, and this formation method includes the following step: step 1 forms a material layer on this plastic base; Step 2 forms this material layer oxidation the porous crack template layer with a thickness template in the anodic oxidation mode; And step 3, form a resilient coating on these many pore layers.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics are, also comprise forming a flatness layer between this resilient coating and this many pore layers.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics be, this flatness layer for select a high molecular polymer and inorganic flatness layer one of them.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics are that this material layer is for selecting one of silicon, titanium, zinc and aluminium.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics are that these many pore layers have a plurality of hollow structure oxides, and this hollow structure oxide is for selecting one of Si oxide, titanium oxide, zinc oxide and aluminum oxide.
The formation method of the heat insulation structure on the above-mentioned plastic base, its characteristics are, can form a conductive layer before this step 2 earlier between this plastic base and this template layer, and then carry out this step 2 to step 3.
Effect of the present invention is as follows:
1) utilizes multi-pore structure to be formed on the plastic base, improve the thermal endurance of plastic base, reach the purpose that on plastic base, forms polysilicon membrane.
2) utilize porous crack heat insulation structure to improve the plastic base thermal endurance,, make flat-panel screens, reach the purpose of light, thin and deflection so that form thin-film transistor on this plastic base.
3) utilize porous crack heat insulation structure to improve the plastic base thermal endurance,, reach the purpose that reduces cost so that form dynamical electronic component on this plastic base.
4) utilize porous crack heat insulation structure to be formed on the plastic base, reach the purpose of smooth plastic base.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Figure 1A is the first preferred embodiment generalized section of the heat insulation structure on the plastic base of the present invention;
Figure 1B is the second preferred embodiment schematic diagram of the heat insulation structure on the plastic base of the present invention;
Fig. 2 A is the spherical hollow structure oxide schematic diagram of the heat insulation structure on the plastic base of the present invention;
Fig. 2 B is the disc hollow structure oxide schematic diagram of the heat insulation structure on the plastic base of the present invention;
Fig. 2 C is the cylindrical hollow configuration oxide schematic diagram of the heat insulation structure on the plastic base of the present invention;
Fig. 3 A to Fig. 3 D is the formation method flow schematic diagram of first preferred embodiment of the present invention;
Fig. 4 A to 4F is the formation method flow schematic diagram of second preferred embodiment of the present invention;
Fig. 5 A to Fig. 5 F is the last grid type transistor implementing procedure schematic diagram that utilizes the heat insulation structure on the plastic base of the present invention;
Fig. 6 A to Fig. 6 F is the following grid type transistor implementing procedure schematic diagram that utilizes the heat insulation structure on the plastic base of the present invention.
Wherein, Reference numeral:
Heat insulation structure on the 1-plastic base
The 11-plastic base, the many pore layers of 12-
121-hollow structure oxide, the 13-resilient coating
Heat insulation structure on the 2-plastic base
The 21-plastic base, the 22-conductive layer
The 23-template layer, the many pore layers of 24-
241-hollow structure oxide
The 25-flatness layer, the 26-resilient coating
The 31-plastic base, the many pore layers of 32-
The spherical hollow structure of 32a-, 32b-disc hollow structure
The 32c-cylindrical hollow configuration
The 4-flow process
4a ~ 4d-step
The 41-anodic oxidation aluminium formwork (Anodic Aluminum Oxide, AAO)
41a-mould post hole, 43-hollow structure oxide
The 44-plastic base, the many pore layers of 45-
The 46-resilient coating
The 5-flow process
5a ~ 5e-step
The 51-plastic base, the 52-conductive layer
The 53-material layer, 54-porous crack template layer
54a-mould post hole, 54b-thickness template
The 56-flatness layer, the 57-resilient coating
The last gate type transistor of 6-, the 61-plastic base
The many pore layers of 62-, 62a-hollow structure oxide
The 63-buffer oxide layer, the 64-amorphous silicon layer
The 65-polysilicon layer, 65a-source/drain region
The 66-gate dielectric, 67-gate metal electrode
The 68-insulating barrier, 69-Metal Contact electrode
Gate type transistor under the 7-
The 71-plastic base, the many pore layers of 72-
72a-hollow structure oxide, the 73-buffer oxide layer
74-gate metal electrode, the 75-gate dielectric
The 76-amorphous silicon layer, the 77-polysilicon layer
77a-source/drain region, the 78-insulating barrier
79-Metal Contact electrode
Embodiment
In order to improve the usability of plastic base on industry, the present invention utilizes and selects coefficient of heat conduction materials with smaller and the slow-footed notion of heat biography under air, on the template of porous crack, form porous crack oxide, utilize the thermal insulation layer of this porous crack oxide then for plastic base, to improve the energy of laser crystallization, make plastic base avoid Yin Gaowen in manufacturing process and the pyrolytic damage that produces.
For clearer understanding meaning of the present invention, see also shown in Figure 1A, this figure is the first preferred embodiment generalized section of the heat insulation structure on the plastic base of the present invention.Heat insulation structure 1 on this plastic base has a plastic base 11, pore layer more than one 12 and a resilient coating 13.These many pore layers 12, it is formed on this plastic base 11, and these many pore layers 12 are for having a plurality of hollow structure oxides 121.This resilient coating 13 is formed on these many pore layers 12.Intercept the heat energy that in manufacturing process, is produced by these many pore layers 12, prevent that this plastic base 11 is subjected to pyrolytic damage and smooth this plastic base 11.Wherein, this hollow structure oxide 121 is one of selection Si oxide, titanium oxide, zinc oxide and aluminum oxide person, and these many pore layers 32 are for selecting one of spherical hollow structure 32a (consulting Fig. 2 A), disc hollow structure 32b (consulting Fig. 2 B) and cylindrical hollow configuration 32c (consulting Fig. 2 C).This cylindrical hollow configuration 32c, it can lie low and intersperse among in these many pore layers 12.This resilient coating 13 is silicon dioxide layer in the present embodiment.
Please continue to consult shown in Figure 1B, this figure is the second preferred embodiment schematic diagram of the heat insulation structure on the plastic base of the present invention.Heat insulation structure 2 on this plastic base has a plastic base 21, a conductive layer 22, a template layer 23, pore layer more than one 24, a flatness layer 25 and a resilient coating 26.This conductive layer 22 is formed between this plastic base 21 and this template layer 23.This conductive layer 22 can be tin indium oxide, and (indiumtinoxide ITO), can improve the uniformity of these many pore layers 24.This template layer 23 is formed between this conductive layer 22 and this many pore layers 24, and this template layer 23 is for selecting one of silicon, titanium, zinc and aluminium.These many pore layers 24 have a plurality of hollow structure oxides 241, and this hollow structure oxide 241 is for selecting one of Si oxide, titanium oxide, zinc oxide and aluminum oxide.This flatness layer 25 is formed on these many pore layers 24, can make this porous crack laminar surface smooth, and this flatness layer 25 is high molecular polymer or inorganic flatness layer.This resilient coating 26 is formed on this flatness layer 25, and this resilient coating is a silicon dioxide layer in the present embodiment.
From above-mentioned explanation, can understand heat insulation structure of the present invention, next will do one and describe in detail at its related production of structure of the present invention.
Please continue to consult Fig. 3 A to Fig. 3 D, be the formation method flow schematic diagram of first preferred embodiment of the present invention.This flow process 4 forms heat insulation structure on a plastic base 44, this flow process 4 includes the following step:
Step 4a, (Anodic aluminum oxide AAO) goes up a plurality of hollow structure oxides 43 of formation at an anodic oxidation aluminium formwork 41;
Step 4b removes this anodic oxidation aluminium formwork 41;
Step 4c should coat formation pore layer more than one 45 on this plastic base 44 by a plurality of hollow structure oxides 43;
Step 4d forms a resilient coating 46 on these many pore layers 45.
This anodic oxidation aluminium formwork 41 has a plurality of mould post hole 41a.Utilize the mode of electrochemistry, chemical vapor deposition (CVD) or sol-gel (sol-gel) to form these a plurality of hollow structure oxides 43 between the gap of this anodised aluminium post hole 41a, and then utilize etched mode to remove this anodic oxidation aluminium formwork 41, to take out these a plurality of hollow structure oxides 43.Then should pass through sol-gel (sol-gel) method by a plurality of hollow structure oxides 43 again, by rotary coating (Spin coating) on this plastic base 44, to form pore layer more than one 45.Form this resilient coating 46 at last again on these many pore layers.
Please continue to consult Fig. 4 A to 4F, be the formation method flow schematic diagram of second preferred embodiment of the present invention.This flow process 5 forms heat insulation structure on a plastic base 51, this flow process includes the following step:
Step 5a forms a material layer 53 on this plastic base 51;
Step 5b forms these material layer 53 oxidations the thickness template 54b with a plurality of hollow structure 54a in the anodic oxidation mode;
Step 5c forms a flatness layer 56 on this many pore layers template layer 54;
Step 5d forms a resilient coating 57 on this flatness layer 56.
Because the making flow process of present embodiment forms one deck and (for example can make mushy material on this plastic base 51, silicon or aluminium) material layer 53, and then this material layer is made into this porous crack template layer 54 (silicon dioxide or alundum (Al) in anodised mode.But, in order to increase the adhesive force of this hollow structure oxide 54a and plastic base 51, this porous crack template layer 54 can not need to remove fully, this thickness template 54b that keeps specific thicknesses between this hollow structure oxide 54a and this plastic base 51 to increase adhesive force.And then the mode with rotary coating forms this flatness layer 56 on these many pore layers 54, and this flatness layer 56 is a high molecular polymer or inorganic flatness layer.On this flatness layer 56, form this resilient coating 57 at last.
In addition, in order to improve the uniformity of these many pore layers 54, can form a conductive layer 62 at this plastic base 51 and 53 of this material layers.In the present embodiment, this conductive layer 52 be a tin indium oxide (indiumtin oxide, ITO).Carry out step 5b to step 5d then, can guarantee that so anodic oxidation is complete, also can control the uniformity of these many pore layers 54.
From above-mentioned process step, can understand making flow process of the present invention.For more detail knowledge application of the present invention, for example on plastic base, form the thin-film transistor of polysilicon, next will describe with two embodiment.
Please continue to consult Fig. 5 A to Fig. 5 F, for utilizing the last grid type transistor implementing procedure schematic diagram of the heat insulation structure on the plastic base of the present invention.Should go up grid type transistor 6 its making flow processs is to be coated with or to form pore layer more than one 62 (consulting Fig. 5 A) earlier on a plastic base 61.These many pore layers have a plurality of hollow structure oxide 62a.The surface roughness of these many pore layers (surface roughness) is less than 5 nanometers.Except but thermal resistance is avoided pyrolytic damage to protect this plastic base 61, in addition because of plastic base 61 surfaces than out-of-flatness, thin-film transistor element can't be made in the above, uses so these many pore layers 62 also can be used as flatness layer simultaneously.Be to form on these many pore layers 62 buffer oxide layer 63 and an amorphous silicon layer 64 (consulting Fig. 5 B) again.And then with laser tempering make this amorphous silicon layer 64 again crystallization to form a polysilicon layer 65 (consulting Fig. 5 C).
Then on this polysilicon layer, carry out N type or the doping of P type, to form pair of source 65a (consulting Fig. 5 D) in the mode of ion injection (implant).And then deposition gate dielectric 66 (Gatedielectric) and gate pole metal electrode 67 (Gate metal) (consulting Fig. 5 E).Then form an insulating barrier 68 (interlayer) and on should be, forming contact hole on this protective layer 68, and form Metal Contact electrode 69 (Metal interconnect) (consulting Fig. 5 F) source/drain region 65a.Wherein the purpose of this buffer oxide layer 63 is for making the gas phase silicon containing species be easy to produce into nuclear reaction on this buffer oxide layer 63, helping amorphous silicon layer 64 shapings and stop buffer oxide layer 63 following impurity directly to be penetrated in (penetrate) amorphous silicon layer 64.
Please continue to consult Fig. 6 A to Fig. 6 F, for utilizing the following grid type transistor implementing procedure schematic diagram of the heat insulation structure on the plastic base of the present invention.This time gate type transistor 7 its making flow processs are to be coated with or to form pore layer more than one 72 (consulting Fig. 6 A) earlier on a plastic base 71.These many pore layers 72 have a plurality of hollow structure oxide 72a.The surface roughness of these many pore layers 72 (surface roughness) is less than 5 nanometers.Except but thermal resistance is avoided pyrolytic damage to protect this plastic base 71, in addition because of plastic base 71 surfaces than out-of-flatness, thin-film transistor element can't be made in the above, uses so these many pore layers 72 also can be used as flatness layer simultaneously.On these many pore layers 72, form a buffer oxide layer 73 (consulting Fig. 6 B) again.
On these many pore layers 73, form a gate metal electrode 74 (Gate metal).Then deposit gate dielectric 75 (Gate dielectric) again on this metal electrode 74, and on this gate dielectric 75, form an amorphous silicon layer 76 (consulting Fig. 6 C).And then by laser tempering make this amorphous silicon layer 76 again crystallization to form a polysilicon layer 77 (consulting Fig. 6 D).Then on this polysilicon layer 77, carry out N type or the doping of P type, to form pair of source 77a (consulting Fig. 6 E) in the mode of ion implantation.Then deposit an insulating barrier 78 (interlayer) and on should be, forming contact hole on this protective layer 78, and form Metal Contact electrode 79 (Metal interconnect) (consulting Fig. 6 F) source/drain region 77a.Wherein the purpose of this buffer oxide layer 73 is for stoping buffer oxide layer 73 following impurity directly to be penetrated in (penetrate) amorphous silicon layer 76.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (9)
1, the formation method of the heat insulation structure on a kind of plastic base is characterized in that, this heat insulation structure is formed on the plastic base, and this formation method includes the following step:
Step 1 forms a plurality of multi-pore structures on an anodic oxidation template;
Step 2 is removed this anodic oxidation aluminium formwork;
Step 3 should be coated formation pore layer more than on this plastic base by a plurality of multi-pore structures; And
Step 4 forms a resilient coating on these many pore layers.
2, the formation method of the heat insulation structure on the plastic base according to claim 1 is characterized in that, this coating be for should a plurality of multi-pore structures passing through sol-gel, again by rotary coating on this plastic base.
3, the formation method of the heat insulation structure on the plastic base according to claim 1 is characterized in that, this multi-pore structure is for selecting one of Si oxide, titanium oxide, zinc oxide and aluminum oxide.
4, the formation method of the heat insulation structure on a kind of plastic base is characterized in that, this heat insulation structure is formed on the plastic base, and this formation method includes the following step:
Step 1 forms a material layer on this plastic base;
Step 2 forms this material layer oxidation the porous crack template layer with a thickness template in the anodic oxidation mode; And
Step 3 forms a resilient coating on these many pore layers.
5, the formation method of the heat insulation structure on the plastic base according to claim 4 is characterized in that, also comprises forming a flatness layer between this resilient coating and this many pore layers.
6, the formation method of the heat insulation structure on the plastic base according to claim 5 is characterized in that, this flatness layer for select a high molecular polymer and inorganic flatness layer one of them.
7, the formation method of the heat insulation structure on the plastic base according to claim 4 is characterized in that, this material layer is for selecting one of silicon, titanium, zinc and aluminium.
8, the formation method of the heat insulation structure on the plastic base according to claim 4, it is characterized in that, these many pore layers have a plurality of hollow structure oxides, and this hollow structure oxide is for selecting one of Si oxide, titanium oxide, zinc oxide and aluminum oxide.
9, the formation method of the heat insulation structure on the plastic base according to claim 4 is characterized in that, can form a conductive layer before this step 2 earlier between this plastic base and this template layer, and then carry out this step 2 to step 3.
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| KR101960387B1 (en) * | 2012-12-21 | 2019-03-20 | 엘지디스플레이 주식회사 | Flexible display device and manufacturing method of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6399177B1 (en) * | 1999-06-03 | 2002-06-04 | The Penn State Research Foundation | Deposited thin film void-column network materials |
| JP2003266612A (en) * | 2002-03-15 | 2003-09-24 | Hiraoka & Co Ltd | Heat barrier anti-staining film material |
| US20040109997A1 (en) * | 2002-08-21 | 2004-06-10 | Xing-Ya Li | Labels and labeling process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6399177B1 (en) * | 1999-06-03 | 2002-06-04 | The Penn State Research Foundation | Deposited thin film void-column network materials |
| JP2003266612A (en) * | 2002-03-15 | 2003-09-24 | Hiraoka & Co Ltd | Heat barrier anti-staining film material |
| US20040109997A1 (en) * | 2002-08-21 | 2004-06-10 | Xing-Ya Li | Labels and labeling process |
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Effective date of registration: 20220330 Address after: 26, 1 song Chi Road, Xinyi District, Taipei, Taiwan, China Patentee after: HANNSTAR DISPLAY Corp. Address before: Hsinchu County, Taiwan, China Patentee before: Industrial Technology Research Institute |
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