CN100427379C - Nano monocrystalline antimony wire/alumina ordered mesoporous complex and preparation method thereof - Google Patents
Nano monocrystalline antimony wire/alumina ordered mesoporous complex and preparation method thereof Download PDFInfo
- Publication number
- CN100427379C CN100427379C CNB2004100143942A CN200410014394A CN100427379C CN 100427379 C CN100427379 C CN 100427379C CN B2004100143942 A CNB2004100143942 A CN B2004100143942A CN 200410014394 A CN200410014394 A CN 200410014394A CN 100427379 C CN100427379 C CN 100427379C
- Authority
- CN
- China
- Prior art keywords
- template
- antimony
- complex
- order mesoporous
- alundum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Cell Electrode Carriers And Collectors (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
The present invention discloses nanometer single crystal antimony thread /alumina ordered mesoporous complex and a preparation method. The complex comprises an alumina ordered mesoporous bi-pass template, particularly the complex is composed of an alumina ordered mesoporous template one side of which is covered with a conductive body, and single crystal antimony nanometer threads which are uniformly distributed in holes of the template. The specific surface area of the complex is from 4.5 to 10m<2>/g, and the porosity is from 0 to 10%. The diameter of the single crystal antimony nanometer threads is from 10 to 60MM, and the length of the threads is from 1 nm to 120 mu m. The method comprises the following steps that the alumina ordered mesoporous bi-pass template can be obtained respectively by an anode oxidation method, a metal chloride removing method and a phosphoric acid opening method; particularly, one side of the template is first covered with the conductive body; then, the template can be arranged in sedimentation liquid prepared by antimony trichloride, citric acid and potassium citrate under 7 to 25 DEG C; the conductive body can be used as the cathode, and a graphite flake in sedimentation liquid can be used as the anode; the complex can be manufactured by switching on pulse current. The complex can control the grown diameter and the length of the single crystal antimony nanometer threads, and can be widely used for nanometer electron integrated circuits.
Description
Technical field
The present invention relates to a kind of nano material and method for making, especially order mesoporous complex of nano crystal antimony silk/alundum (Al and preparation method.
Background technology
At present, information-intensive society is more and more higher to the integrated level requirement of integrated circuit, impel people constantly to explore the approach that can break through the device size limit, and the final outlet of IC chip is to utilize the quantum effect of microcosmos.Novel quantum device has at a high speed, the characteristics of efficient, high integration, low energy consumption, and its operating rate can improve 1000 times, energy consumption and reduce by 1000 times.Receive the concern of countries in the world day by day as the research and development of the nano electron device of quantum device, its development trend has two kinds, and the one, " from top to bottom " just improves integrated level, and this is more and more difficult; Another kind is " from bottom to top ", adopts the method for self-organizing or self assembly to be assembled into part inorganic or organic material exactly, and this will play more and more important effect in the development of nanometer electronic device.Alumina templates self assembly wherein because of the diameter in its regular porous array structure that has, hole can be controlled at several nanometers between the hundreds of nanometers, be parallel to each other between the Kong Yukong, the aspect ratio of the length in the diameter in hole and hole can reach the characteristics of hundreds of to several thousand and be subjected to increasing attention in recent years.If can be in the hole of alumina templates the growing metal nano wire, just can obtain parallel each other nano wire array, thereby be applied to nanometer electronic device.Antimony is a kind of semimetal, considers that from its band structure the overlapping width of its conduction band and valence band is very little, is 180meV (when temperature is 4.2K); Theoretical calculating shows under a certain cut off diameter, because quantum confined effect, the transformation from the metallic character to the characteristic of semiconductor will take place in the antimony nano wire, if can obtain the nanometer monocrystalline silk of antimony, and make these nano wires all along a crystal orientation growth, then can be applied to integrated circuit fields.But, because the inwall in alumina templates hole exists a large amount of outstanding keys, be in unbalanced state on the energy, the feasible still unassembled nano wire that obtains monocrystalline in template so far.
Summary of the invention
The technical problem to be solved in the present invention is for overcoming weak point of the prior art, provide a kind of order mesoporous complex of nano crystal antimony silk/alundum (Al of in order, highly selecting outstanding orientation and easy and simple to handle, production cost is low, can be used for the preparation method of large-scale production.
The order mesoporous complex of nano crystal antimony silk/alundum (Al comprises that the specific area of the order mesoporous bilateral template of alundum (Al is 9～19m
2/ g, porosity are 30～50%, the aperture is 10～60nm, particularly this order mesoporous complex is to be covered with the order mesoporous template of alundum (Al of electric conductor and the monocrystalline antimony nano wire that is evenly distributed in the hole of this order mesoporous template constitutes by one side, wherein, the specific area of order mesoporous complex is 4.5～10m
2/ g, porosity are 0～10%, and the diameter of monocrystalline antimony nano wire is 10～60nm, and filament length is 1nm～120 μ m.
As the further improvement of the order mesoporous complex of nano crystal antimony silk/alundum (Al, described electric conductor is goldleaf or silver foil or Copper Foil; The thickness of described goldleaf or silver foil or Copper Foil is 30～70nm; The thickness of the order mesoporous bilateral template of described alundum (Al is 60～120 μ m.
The preparation method of the order mesoporous complex of nano crystal antimony silk/alundum (Al comprises with anodizing and obtains the order mesoporous template of alundum (Al, obtain the order mesoporous bilateral template of alundum (Al with metal chloride removal method and phosphoric acid perforate method again, particularly elder generation is covered with electric conductor with the one side of above-mentioned order mesoporous bilateral template, the template that will be covered with electric conductor again places by trichloride antimony under 7～25 ℃, in the deposit fluid that citric acid and potassium citrate are mixed with, at last, with the electric conductor on the template is negative electrode, graphite flake in the deposit fluid is an anode, passes to 4～12mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 400 μ s～100ms, pulse is 1～7 to 9～3 with the time ratio of shutoff, makes the order mesoporous complex of nano crystal antimony silk/alundum (Al.
As the preparation method's of the order mesoporous complex of nano crystal antimony silk/alundum (Al further improvement, described electric conductor is goldleaf or silver foil or Copper Foil; Described goldleaf or silver foil or Copper Foil adopt vacuum vapour deposition spraying or plasma coating; The concentration of described trichloride antimony is 0.01～0.03 mole, and the concentration of citric acid is 0.05～0.15 mole, and the concentration of potassium citrate is 0.04～0.06 mole.
Beneficial effect with respect to prior art is, one, after the complex that makes used field emission scanning electron microscope and high resolution electron microscope and the observation of rotary anode X-ray diffractometer and test respectively, obtained the field emission scanning electron microscope photo, the X ray diffracting spectrum of the electronics selected diffraction photo of monocrystalline antimony nano wire and high-resolution lattice image photo and monocrystalline antimony nano wire array, by photo and collection of illustrative plates, and as calculated as can be known, complex is to be evenly distributed on by monocrystalline antimony nano wire that institute constitutes in the hole of the order mesoporous template of alundum (Al, electronic diffraction and high-resolution lattice image result show that the quality of antimony nano wire single crystal characteristics and crystallization is all very good, the antimony nano wire is along perpendicular to (110) or (202) crystal plane direction preferential growth, wherein, the diameter of monocrystalline antimony nano wire is 10～60nm, filament length is 1nm～120 μ m, and the specific area of complex is 4.5～10m
2/ g, porosity are 0～10%; They are two years old, after dissolving away the order mesoporous template of alundum (Al in the complex, use conventional transmission electron microscope and four point probe temperature and resistance tester to observe and check again respectively to the monocrystalline antimony nano wire that obtains, the monocrystalline antimony nano wire transmission electron microscope photo and the electrons transport property graph shows that obtain, with variation of temperature, the electrons transport property curve of the monocrystalline antimony nano wire of different-diameter is different, wherein the monocrystalline antimony nano wire of 15nm has presented characteristic of semiconductor, and this also is consistent fully with theoretical result calculated; Its three, the preparation process in, the component of the deposit fluid of employing is simple, cheap, pollution-free, belong to green synthetic, the method growing single-crystal antimony nano wire with two electrodes does not need reference electrode, easy and simple to handle, by adjusting the aperture of the order mesoporous template of alundum (Al, realized control to monocrystalline antimony nano wire diameter, and the length of between two electrodes, using pulse current and controlling conduction time, by discontinuous deposition, realized controlling to monocrystalline antimony nano wire growth length; They are four years old, by further test and analysis to the electronic transport performance of monocrystalline antimony nano wire, as can be known, for along monocrystalline antimony nano wire perpendicular to (110) crystal plane direction preferential growth, when diameter shows as metalline when 15nm is above, promptly constantly reduce just positive temperature-coefficient of electrical resistance with decrease of temperature resistance; But test result shows that simultaneously resistance value is little with variation of temperature, and in 20K～273K scope, R (T)/R (273K)＞0.84 that is to say that resistance is to temperature-insensitive in a very big temperature range; This has great application prospect in the application facet of cold current transfer and resistive element undoubtedly.More what is interesting is, is the monocrystalline antimony nano wire of 15nm for diameter, constantly raises with decrease of temperature resistance, presents negative temperature-coefficient of electrical resistance, just semi-conductive characteristic; This explanation, has taken place by the transformation of semimetal characteristic to characteristic of semiconductor when diameter is reduced to 15nm for along the monocrystalline antimony nano wire perpendicular to (110) crystal plane direction preferential growth.This will have infusive application prospect in the application of nano-electron integrated circuit.
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
Fig. 1 be to complex with take the photograph after the JEOL JSM-6700F type field emission scanning electron microscope observation photo;
Fig. 2 be to the monocrystalline antimony nano wire of complex take the photograph after with the observation of JEL 2010 type high resolution electron microscopes photo, wherein, (a) be electronics selected diffraction photo, (b) be high-resolution lattice image photo; Fig. 3 uses (D/MAX-rA) (λ=1.542 to complex
) after the type rotary anode X-ray diffractometer test, the edge that obtains is perpendicular to the X ray diffracting spectrum (a) of the monocrystalline antimony nano wire array of (110) crystal plane direction preferential growth, with the X ray diffracting spectrum (b) of edge perpendicular to the monocrystalline antimony nano wire array of crystal face (202) direction preferential growth, wherein, collection of illustrative plates (a) and ordinate (b) are intensity, and abscissa is angle (2 θ);
After Fig. 4 is the order mesoporous template of alundum (Al that dissolves away in the complex, to the monocrystalline antimony nano wire that obtains re-use take the photograph after the observation of JEOL 200CX type conventional transmission electron microscope photo, wherein, the diameter of the monocrystalline antimony nano wire in the photo (a) is 40nm, the diameter of the monocrystalline antimony nano wire in the photo (b) is 30nm, the diameter of the monocrystalline antimony nano wire in the photo (c) is 20nm, and the diameter of the monocrystalline antimony nano wire in the photo (d) is 15nm;
The electrons transport property chart that Fig. 5 obtains after being to use four point probe temperature and resistance tester respectively the monocrystalline antimony nano wire in the photo shown in Figure 4 (a)～(d) to be detected, ordinate in the table is resistance ratio (R (T)/R (237K)), and abscissa is temperature (K).
The specific embodiment
At first obtain the order mesoporous template of alundum (Al, obtain the order mesoporous bilateral template of alundum (Al with metal chloride removal method and phosphoric acid perforate method again with anodizing; Wherein, the specific area of bilateral template is 9～19m
2/ g, porosity are 30～50%, the aperture is 10～60nm, and the thickness of template is 60～120 μ m.
Embodiment 1: the one side that with the aperture that makes is the order mesoporous bilateral template of alundum (Al of 40nm earlier is the goldleaf of 30nm with the last thickness of vacuum vapour deposition spraying; The template that will be covered with goldleaf again places the deposit fluid that is mixed with by trichloride antimony, citric acid and potassium citrate under 25 ℃, wherein, the concentration of trichloride antimony is 0.01 mole, and the concentration of citric acid is 0.05 mole, and the concentration of potassium citrate is 0.04 mole; At last, be negative electrode with the goldleaf on the template, the graphite flake in the deposit fluid is an anode, passes to 4mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 100ms, pulse is 1 to 3 with the time ratio of shutoff, makes as Fig. 1, Fig. 2 and the order mesoporous complex of nano crystal antimony silk/alundum (Al shown in Figure 3.
Embodiment 2: the one side that with the aperture that makes is the order mesoporous bilateral template of alundum (Al of 30nm earlier is the silver foil of 40nm with thickness on the plasma coating; The template that will be covered with silver foil again places the deposit fluid that is mixed with by trichloride antimony, citric acid and potassium citrate under 20 ℃, wherein, the concentration of trichloride antimony is 0.015 mole, and the concentration of citric acid is 0.075 mole, and the concentration of potassium citrate is 0.045 mole; At last, be negative electrode with the silver foil on the template, the graphite flake in the deposit fluid is an anode, passes to 6mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 1ms, pulse is 1.5 to 4 with the time ratio of shutoff, makes as Fig. 1, Fig. 2 and the order mesoporous complex of nano crystal antimony silk/alundum (Al shown in Figure 3.
Embodiment 3: the one side that with the aperture that makes is the order mesoporous bilateral template of alundum (Al of 20nm earlier is the goldleaf of 50nm with the last thickness of vacuum vapour deposition spraying; The template that will be covered with goldleaf again places the deposit fluid that is mixed with by trichloride antimony, citric acid and potassium citrate under 16 ℃, wherein, the concentration of trichloride antimony is 0.02 mole, and the concentration of citric acid is 0.1 mole, and the concentration of potassium citrate is 0.05 mole; At last, be negative electrode with the goldleaf on the template, the graphite flake in the deposit fluid is an anode, passes to 8mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 50ms, pulse is 2 to 3 with the time ratio of shutoff, makes as Fig. 1, Fig. 2 and the order mesoporous complex of nano crystal antimony silk/alundum (Al shown in Figure 3.
Embodiment 4: the one side that with the aperture that makes is the order mesoporous bilateral template of alundum (Al of 15nm earlier is the Copper Foil of 60nm with thickness on the plasma coating; The template that will be covered with Copper Foil again places the deposit fluid that is mixed with by trichloride antimony, citric acid and potassium citrate under 11 ℃, wherein, the concentration of trichloride antimony is 0.025 mole, and the concentration of citric acid is 0.125 mole, and the concentration of potassium citrate is 0.055 mole; At last, be negative electrode with the Copper Foil on the template, the graphite flake in the deposit fluid is an anode, passes to 10mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 75ms, pulse is 5.5 to 4.5 with the time ratio of shutoff, makes as Fig. 1, Fig. 2 and the order mesoporous complex of nano crystal antimony silk/alundum (Al shown in Figure 3.
Embodiment 5: the one side that with the aperture that makes is the order mesoporous bilateral template of alundum (Al of 60nm earlier is the goldleaf of 70nm with the last thickness of vacuum vapour deposition spraying; The template that will be covered with goldleaf again places the deposit fluid that is mixed with by trichloride antimony, citric acid and potassium citrate under 7 ℃, wherein, the concentration of trichloride antimony is 0.03 mole, and the concentration of citric acid is 0.15 mole, and the concentration of potassium citrate is 0.06 mole; At last, be negative electrode with the goldleaf on the template, the graphite flake in the deposit fluid is an anode, passes to 12mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 400 μ s, pulse is 7 to 9 with the time ratio of shutoff, makes as Fig. 1, Fig. 2 and the order mesoporous complex of nano crystal antimony silk/alundum (Al shown in Figure 3.
To place sodium hydroxide solution by the complex that embodiment 1～4 obtains respectively again, molten go the order mesoporous template of alundum (Al after, use JEOL 200CX type conventional transmission electron microscope and four point probe temperature and resistance tester to observe and check again respectively to the monocrystalline antimony nano wire that obtains, obtain as shown in Figure 4 and Figure 5 monocrystalline antimony nano wire transmission electron microscope photo (a)～(d) and electrons transport property chart and corresponding curve wherein.
Obviously, those skilled in the art can carry out various changes and modification to the order mesoporous complex of nano crystal antimony silk/alundum (Al of the present invention and preparation method and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (5)
1, the order mesoporous complex of a kind of nano crystal antimony silk/alundum (Al, the specific area that comprises the order mesoporous bilateral template of alundum (Al is 9～19m
2/ g, porosity are 30～50%, the aperture is 10～60nm, it is characterized in that this order mesoporous complex is to be covered with the order mesoporous template of alundum (Al of electric conductor and the monocrystalline antimony nano wire that is evenly distributed in the hole of this order mesoporous template constitutes by one side, wherein, the specific area of order mesoporous complex is 4.5～10m
2/ g, porosity are 0～10%, and electric conductor is goldleaf or silver foil or Copper Foil, and the diameter of monocrystalline antimony nano wire is 10～60nm, and filament length is 1nm～120 μ m.
2, the order mesoporous complex of nano crystal antimony silk/alundum (Al according to claim 1, the thickness that it is characterized in that goldleaf or silver foil or Copper Foil is 30～70nm.
3, the order mesoporous complex of nano crystal antimony silk/alundum (Al according to claim 1, the thickness that it is characterized in that the order mesoporous bilateral template of alundum (Al is 60～120 μ m.
4, the preparation method of the order mesoporous complex of nano crystal antimony silk/alundum (Al according to claim 1, comprise with anodizing and obtain the order mesoporous template of alundum (Al, obtain the order mesoporous bilateral template of alundum (Al with metal chloride removal method and phosphoric acid perforate method again, it is characterized in that elder generation is covered with electric conductor with the one side of above-mentioned order mesoporous bilateral template, the template that will be covered with electric conductor again places by trichloride antimony under 7～25 ℃, in the deposit fluid that citric acid and potassium citrate are mixed with, wherein, the concentration of trichloride antimony is 0.01～0.03 mole, the concentration of citric acid is 0.05～0.15 mole, the concentration of potassium citrate is 0.04～0.06 mole, at last, with the electric conductor on the template is negative electrode, graphite flake in the deposit fluid is an anode, passes to 4～12mA/cm between negative electrode and anode
2Pulse current, wherein, the time of pulse current is 400 μ s～100ms, pulse is 1～7 to 9～3 with the time ratio of shutoff, makes the order mesoporous complex of nano crystal antimony silk/alundum (Al.
5, the preparation method of the order mesoporous complex of nano crystal antimony silk/alundum (Al according to claim 4 is characterized in that goldleaf or silver foil or Copper Foil adopt vacuum vapour deposition spraying or plasma coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100143942A CN100427379C (en) | 2004-03-19 | 2004-03-19 | Nano monocrystalline antimony wire/alumina ordered mesoporous complex and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100143942A CN100427379C (en) | 2004-03-19 | 2004-03-19 | Nano monocrystalline antimony wire/alumina ordered mesoporous complex and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1669908A CN1669908A (en) | 2005-09-21 |
| CN100427379C true CN100427379C (en) | 2008-10-22 |
Family
ID=35041386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100143942A Expired - Fee Related CN100427379C (en) | 2004-03-19 | 2004-03-19 | Nano monocrystalline antimony wire/alumina ordered mesoporous complex and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100427379C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5044795B2 (en) | 2009-08-25 | 2012-10-10 | 株式会社プロステック | Medical parts and method of manufacturing the same |
| CN103620385A (en) * | 2011-06-13 | 2014-03-05 | 新日铁住金化学株式会社 | Sensor element, dew condensation sensor, humidity sensor, method for detecting dew condensation, and dew-point measurement device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1137679A (en) * | 1995-06-02 | 1996-12-11 | 上海大地通信电子有限公司 | Production process for positive temp. coefficient ceramic thermal resistor |
| US6238701B1 (en) * | 1997-07-14 | 2001-05-29 | Basf Aktiengesellschaft | High surface area alumina solid |
| CN1391237A (en) * | 2002-07-17 | 2003-01-15 | 浙江大学 | Process for growing Ge nanoline by aluminium oxide template |
| CN1396115A (en) * | 2002-06-16 | 2003-02-12 | 吉林大学 | Oxide material with high specific surface area and mesoporous structure and its preparing process |
| CN1415778A (en) * | 2002-12-12 | 2003-05-07 | 清华大学 | Antimony-containing nano composite film and preparation method thereof |
-
2004
- 2004-03-19 CN CNB2004100143942A patent/CN100427379C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1137679A (en) * | 1995-06-02 | 1996-12-11 | 上海大地通信电子有限公司 | Production process for positive temp. coefficient ceramic thermal resistor |
| US6238701B1 (en) * | 1997-07-14 | 2001-05-29 | Basf Aktiengesellschaft | High surface area alumina solid |
| CN1396115A (en) * | 2002-06-16 | 2003-02-12 | 吉林大学 | Oxide material with high specific surface area and mesoporous structure and its preparing process |
| CN1391237A (en) * | 2002-07-17 | 2003-01-15 | 浙江大学 | Process for growing Ge nanoline by aluminium oxide template |
| CN1415778A (en) * | 2002-12-12 | 2003-05-07 | 清华大学 | Antimony-containing nano composite film and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 含Ti介孔氧化铝分子筛的合成与表征. 李奚等.南京师范大学学报，第2卷第4期. 2002 * |
| 纳米级介孔复合体的制备及其抗菌性能评价. 蒋亚等.化工新型材料，第31卷第3期. 2003 * |
| 银/二氧化硅介孔复合体的制备. 蔡伟平等.科学通报，第42卷第2期. 1997 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1669908A (en) | 2005-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xu et al. | Preparation and characterization of CdS nanowire arrays by dc electrodeposit in porous anodic aluminum oxide templates | |
| Anthony et al. | Tuning optical band gap of vertically aligned ZnO nanowire arrays grown by homoepitaxial electrodeposition | |
| Tonezzer et al. | Multiselective visual gas sensor using nickel oxide nanowires as chemiresistor | |
| Hang et al. | Growth mechanism and field emission properties of nickel nanocones array fabricated by one-step electrodeposition | |
| Abd-Ellah et al. | Enhancement of solar cell performance of p-Cu2O/n-ZnO-nanotube and nanorod heterojunction devices | |
| CN101266919A (en) | A method for selectively etching silicon nano line | |
| Lai et al. | Synthesis of Sn doped CuO nanotubes from core–shell Cu/SnO2 nanowires by the Kirkendall effect | |
| Zhao et al. | A nanoscale Co 3 O 4–WO 3 p–n junction sensor with enhanced acetone responsivity | |
| KR20180049012A (en) | A novel method of manufacturing silver nanowires with a node having a uniform aspect ratio | |
| CN103482674A (en) | Preparation method of copper oxide nanowires and application of copper oxide nanowires in negative electrode of lithium ion battery | |
| Tang et al. | Hierarchical C-doped CuO nanorods on carbon cloth as flexible binder-free anode for lithium storage | |
| Chandrappa et al. | Electrochemical bulk synthesis and characterisation of hexagonal-shaped CuO nanoparticles | |
| Ding et al. | Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array | |
| Abraham et al. | One-dimensional (1D) nanomaterials: Nanorods and nanowires; nanoscale processing | |
| Ren et al. | Synthesis, properties, and applications of large-scale two-dimensional materials by polymer-assisted deposition | |
| Albu-Yaron et al. | Influence of the electrochemical deposition parameters on the microstructure of MoS2 thin films | |
| Tan et al. | Synthesis of SnO2 nanorods and hollow spheres and their electrochemical properties as anode materials for lithium ion batteries | |
| CN100427379C (en) | Nano monocrystalline antimony wire/alumina ordered mesoporous complex and preparation method thereof | |
| Xu et al. | Substrate-free fabrication of self-supported V2O5 nanobelt arrays by a low-temperature solvothermal method with high electrochemical performance | |
| Hsueh et al. | CuO-nanowire field emitter prepared on glass substrate | |
| Cai et al. | Enhancement of photoelectrochemical performance of Ag@ ZnO nanowires: experiment and mechanism | |
| Radhakrishnan et al. | Growth of ZnO nanostructures: Cones, rods and hallow-rods, by microwave assisted wet chemical growth and their characterization | |
| Mo et al. | Synthesis and properties of delafossite CuAlO 2 nanowires | |
| Santra et al. | Graphene-anchored p-type CuBO2 nanocrystals for a transparent cold cathode | |
| Saraç et al. | The influence of seed layer electroplating time on structural properties, optical energy bandgap, diameter, growth orientation and surface roughness of ZnO nanorods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20110319 |