CN100424959C - Breakdown diode triggering thyristor valve over-voltage protector - Google Patents
Breakdown diode triggering thyristor valve over-voltage protector Download PDFInfo
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- CN100424959C CN100424959C CNB2006100649224A CN200610064922A CN100424959C CN 100424959 C CN100424959 C CN 100424959C CN B2006100649224 A CNB2006100649224 A CN B2006100649224A CN 200610064922 A CN200610064922 A CN 200610064922A CN 100424959 C CN100424959 C CN 100424959C
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- 230000015556 catabolic process Effects 0.000 title claims abstract description 52
- 230000001012 protector Effects 0.000 title abstract description 5
- 238000013016 damping Methods 0.000 claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 claims abstract description 12
- 230000001960 triggered effect Effects 0.000 claims abstract 2
- 230000000694 effects Effects 0.000 claims description 9
- 230000000087 stabilizing effect Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 abstract description 9
- 239000003990 capacitor Substances 0.000 abstract description 3
- 230000035939 shock Effects 0.000 abstract description 2
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
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Abstract
The present invention relates to a breakdown diode triggering thyristor overvoltage protector which is composed of one or a plurality of series thyristors and accessories thereof; BOD is connected between a thyristor valve pole and an anode, when the positive voltage of both ends of the thyristors exceeds a specific value, the BOD is converted to a conduction state, and the thyristors are triggered by means of a quick short circuit action. Damping absorption loops composed of resistors and capacitors are connected to both ends of the thyristors in parallel, and a BOD triggering series thyristor unit is grounded by a protective damping resistor; the protective level of overvoltage can be determined by the action voltage of the BOD, the turn-off overshoot of a thyristor valve is absorbed by the damping absorption loops, and the damping absorption loops perform the function of slowing wave heads of the overvoltage; the protective damping resistor performs the functions of restraining currents and consuming energy, and the intensity of the residual voltage of a protection action is simultaneously determined by the selection of the resistance value of the protective damping resistor. A majority of energy of overvoltage shock waves is consumed on the protective damping resistor, and the thyristors takes the conduction loss of the thyristors.
Description
Technical field
The present invention relates to the overvoltage protection in electric power system and the power electronic equipment, particularly a kind of breakdown diode triggering thyristor valve over-voltage protector.
Background technology
The method that is used for the overvoltage protection of electric power system and high-power electrical equipment traditionally mainly contains the method for gap over-voltage protection method and employing zinc oxide arrester.The shortcoming of gap over-voltage protection method is that operation voltage is dispersed big, and stability is low, is subjected to the influence of weather, environmental condition big, also has afterflow, safeguards the problem of aspect.The zinc oxide arrester overvoltage protection mainly is a nonlinear characteristic of having utilized the device self-resistance; but this nonlinear resistance also has a relatively large value in fact under big electric current; this value is more than tens milliohms; therefore the residual voltage of lightning arrester after the protection action is higher; very large-scale high voltage all requires protected equipment tolerance between protection residual voltage and protection operating value like this; and when overvoltage need be released energy very greatly; just need the lightning arrester of a greater number in parallel, floor space is too big.
Therefore, two kinds of above-mentioned over-voltage protection methods often are difficult to satisfy the accurate especially requirement of power electronic equipment of powerful device that designs.
Summary of the invention
In order to overcome the above-mentioned defective in the middle of the prior art; the objective of the invention is characteristics in conjunction with power electronic equipment; with the rapidity of breakdown diode BOD (BOD:Break Over Diode) protection action and the high-power thyristor valve big advantages of energy of releasing; a kind of frequent movement that is suitable for is provided; the operation voltage accuracy; stability is high; operation voltage is easy to adjust; protection is swift in motion; residual voltage is little; the novel overvoltage protection that the energy of releasing is big: breakdown diode BOD triggers the thyristor-type overvoltage protection; thereby realize that a kind of operation voltage stability is high, the novel protected means that discharge capacity is big.
Breakdown diode BOD triggers thyristor valve over-voltage protector and does not see identical or similar techniques at home, outward as yet.
The present invention solves the technical scheme that its technical problem takes: a kind of breakdown diode BOD triggers breakdown diode that the thyristor-type overvoltage protection triggers thyristor unit or a plurality of series connection by a breakdown diode and triggers the thyristor unit and constitute; be connected to breakdown diode BOD between gate circuit transistor gate and the anode; breakdown diode BOD is transformed into on-state when the forward voltage between thyristor negative electrode and the anode surpasses a certain particular value, triggers thyristor by a kind of rapid short circuit effect.The damping absorption circuit that first resistance also in parallel and first capacitances in series are formed between thyristor negative electrode and the anode, breakdown diode BOD trigger the series thyristor unit by protection damping resistance ground connection.
Anode one end of breakdown diode is connected with the anode of thyristor Vp with current-limiting resistance series connection back, negative electrode one end of breakdown diode links to each other with the gate pole of diode with thyristor Vp by the voltage stabilizing didoe of series connection, and negative electrode one end of breakdown diode also links to each other with the negative electrode of thyristor Vp with the second electric capacity parallel branch by second resistance simultaneously.
The operation voltage of breakdown diode BOD can determine superpotential protection level, and the damping absorption circuit absorbs the shutoff overshoot of thyristor, also plays the effect that slows down the overvoltage wave head.The protection damping resistance then plays electric current, the catabiotic effect of suppressing, and the selection of its resistance value has also determined the size of protection action residual voltage simultaneously.
Owing to adopted above-mentioned technical scheme, the beneficial effect that the present invention has is: the operation voltage of breakdown diode BOD can determine superpotential protection level, can determine superpotential protection level according to the voltage of breakdown diode BOD.Damping absorption circuit in the breakdown diode triggering thyristor unit not only can absorb the shutoff overshoot of thyristor, also plays the effect that slows down the overvoltage wave head.The protection damping resistance that breakdown diode triggers thyristor unit serial connection then can play electric current, the catabiotic effect of suppressing, and the selection of its resistance value has also determined the size of protection action residual voltage simultaneously, and the through-current capability of this protective device is also very big.Most of energy of overvoltage shock wave all consumes on the protection damping resistance, and thyristor is the conduction loss of self.
Bear the superpotential energy of releasing by lower-cost resistance, and the high thyristor of control precision is responsible for the voltage protection action, compares with the over-voltage protection method that adopts lightning arrester, the advantage of the technical program is tangible:
The puncture operation voltage dispersiveness of breakdown diode BOD is little, and action error generally has only about 2%, makes protected mode of the present invention have good operation voltage stability;
The rapidity of breakdown diode BOD action and thyristor conducting makes technical scheme of the present invention have the responsiveness of μ s level;
Because high-power thyristor serial connection technology, big discharge capacity thyristor manufacturing technology be maturation, therefore technical scheme of the present invention can be applied to the high-voltage great-current field;
The damping absorption circuit that the protection breakdown diode triggers the thyristor unit can play the purpose of alleviating the overvoltage wave head and suppressing temporary overvoltage;
Breakdown diode BOD trigger voltage, breakdown diode trigger the serial number of thyristor unit and big or small Turin of damping resistance is lived adjustable, be thyristor working voltage, protection operation voltage, residual voltage and fault current etc. is all adjustable, so this protective device has good adaptability and adjustability;
Therefore the protection residual voltage of this protective device can be transferred to very low by the decision of protection damping resistance.
Description of drawings
Fig. 1 is the schematic diagram that a kind of breakdown diode BOD of the present invention triggers the thyristor-type overvoltage protection.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
Referring to accompanying drawing 1; breakdown diode BOD of the present invention triggers the thyristor-type overvoltage protection and is made of the breakdown diode triggering thyristor unit that a breakdown diode triggers thyristor unit or a plurality of series connection; be connected to breakdown diode BOD between thyristor Vp gate pole and the anode; breakdown diode BOD is transformed into on-state when the forward voltage between thyristor negative electrode and the anode surpasses a certain particular value, triggers thyristor by a kind of rapid short circuit effect.The operation voltage of breakdown diode BOD can determine superpotential protection level.Voltage according to breakdown diode BOD can determine superpotential protection level.
Anode one end of breakdown diode is connected with the anode of thyristor Vp with current-limiting resistance series connection back, negative electrode one end of breakdown diode connects the anode of voltage stabilizing didoe, the negative electrode of voltage stabilizing didoe links to each other with the anode of diode, the negative electrode of diode links to each other with the gate pole of thyristor Vp, and negative electrode one end of breakdown diode also links to each other with the negative electrode of thyristor Vp with the second capacitor C parallel branch by second resistance R simultaneously.
Also and be connected to the damping absorption circuit that is composed in series by the first resistance R s and the first capacitor C s, this damping absorption circuit can absorb the shutoff overshoot of thyristor Vp, also plays the effect that slows down the overvoltage wave head between thyristor negative electrode and the anode.
Terminal breakdown diode BOD triggers the series thyristor unit by protection damping resistance Rp ground connection; this protection damping resistance Rp can play electric current, the catabiotic effect of suppressing; the selection of its resistance value has also determined the size of protection action residual voltage simultaneously, and the through-current capability of protective device is also very big.
Claims (3)
1. a breakdown diode triggers the thyristor-type overvoltage protection, the breakdown diode triggering thyristor unit that is triggered thyristor unit or a plurality of series connection by a breakdown diode constitutes, and described breakdown diode triggering thyristor unit is made of two thyristors, breakdown diode, current-limiting resistance, voltage stabilizing didoe, diode, damping absorption circuit, second resistance and the second electric capacity parallel branch of reverse parallel connection; The main body that all adopts thyristor to release as energy is connected to breakdown diode between gate circuit transistor gate and the anode, and breakdown diode is transformed into on-state when the forward voltage between thyristor negative electrode and the anode surpasses set point, triggers thyristor by the short circuit effect;
Go back and be connected to the described damping absorption circuit of being made up of first resistance and first capacitances in series between thyristor negative electrode and the anode, described damping absorption circuit absorbs the shutoff overshoot of thyristor, also can slow down the overvoltage wave head;
Terminal breakdown diode triggers the thyristor unit by protection damping resistance ground connection; it is characterized in that: anode one end of breakdown diode is connected with the anode of thyristor with current-limiting resistance series connection back; negative electrode one end of breakdown diode connects the anode of voltage stabilizing didoe; the negative electrode of voltage stabilizing didoe links to each other with the anode of diode; the negative electrode of diode links to each other with the gate pole of thyristor, and negative electrode one end of breakdown diode also links to each other with the negative electrode of thyristor with the second electric capacity parallel branch by described second resistance simultaneously.
2. breakdown diode according to claim 1 triggers the thyristor-type overvoltage protection, and it is characterized in that: the trigger voltage of described breakdown diode is determined by puncture voltage.
3. breakdown diode according to claim 1 and 2 triggers the thyristor-type overvoltage protection, it is characterized in that: the value of protection action residual voltage is by the resistance value decision of described protection damping resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100649224A CN100424959C (en) | 2006-03-17 | 2006-03-17 | Breakdown diode triggering thyristor valve over-voltage protector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100649224A CN100424959C (en) | 2006-03-17 | 2006-03-17 | Breakdown diode triggering thyristor valve over-voltage protector |
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| Publication Number | Publication Date |
|---|---|
| CN1835321A CN1835321A (en) | 2006-09-20 |
| CN100424959C true CN100424959C (en) | 2008-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100649224A Active CN100424959C (en) | 2006-03-17 | 2006-03-17 | Breakdown diode triggering thyristor valve over-voltage protector |
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| CN (1) | CN100424959C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101603999B (en) * | 2009-06-03 | 2012-05-09 | 中国电力科学研究院 | Measurement control device for controllable thyristor switch of metal oxide arrester |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102035188B (en) * | 2010-09-14 | 2014-04-23 | 中国电力科学研究院 | Novel thyristor overvoltage protection method |
| CN104051446B (en) * | 2014-06-25 | 2017-06-23 | 浙江美晶科技有限公司 | A kind of multi-chip Transient Voltage Suppressor and for any pole transient voltage of dual signal line or esd discharge suppressing method |
| CN104868457A (en) * | 2014-12-24 | 2015-08-26 | 万洲电气股份有限公司 | IGBT overvoltage protective circuit capable of large-power energy discharge |
| CN108649937A (en) * | 2018-05-23 | 2018-10-12 | 全球能源互联网研究院有限公司 | A kind of controllable arrester thyristor valve switch of inhibition response Lightning Over-voltage |
| CN109245503B (en) * | 2018-09-18 | 2020-09-08 | 全球能源互联网研究院有限公司 | Bypass circuit and control method thereof |
| CN110456249A (en) * | 2019-08-27 | 2019-11-15 | 上海华力微电子有限公司 | A kind of test circuit for preventing pad and probe card from burning and its application method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3134840A1 (en) * | 1981-09-03 | 1983-03-10 | Brown, Boveri & Cie Ag, 6800 Mannheim | Protection circuitry for controllable power semiconductors |
| US4651251A (en) * | 1984-05-10 | 1987-03-17 | Siemens Aktiengesellschaft | Protective circuitry for a thyristor |
| JPH06233454A (en) * | 1993-02-02 | 1994-08-19 | Fuji Electric Co Ltd | Overvoltage protective circuit for power converter |
-
2006
- 2006-03-17 CN CNB2006100649224A patent/CN100424959C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3134840A1 (en) * | 1981-09-03 | 1983-03-10 | Brown, Boveri & Cie Ag, 6800 Mannheim | Protection circuitry for controllable power semiconductors |
| US4651251A (en) * | 1984-05-10 | 1987-03-17 | Siemens Aktiengesellschaft | Protective circuitry for a thyristor |
| JPH06233454A (en) * | 1993-02-02 | 1994-08-19 | Fuji Electric Co Ltd | Overvoltage protective circuit for power converter |
Non-Patent Citations (2)
| Title |
|---|
| 采用击穿二极管触发晶闸管阀的过电流试验装置的新型过电压保护方式. 贺之渊等.电网技术，第29卷第24期. 2005 |
| 采用击穿二极管触发晶闸管阀的过电流试验装置的新型过电压保护方式. 贺之渊等.电网技术，第29卷第24期. 2005 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101603999B (en) * | 2009-06-03 | 2012-05-09 | 中国电力科学研究院 | Measurement control device for controllable thyristor switch of metal oxide arrester |
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| CN1835321A (en) | 2006-09-20 |
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Owner name: STATE ELECTRIC NET CROP. Effective date: 20130204 |
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Effective date of registration: 20130204 Address after: 100085 Beijing city Haidian District Qinghe small Camp Road No. 15 Patentee after: China Electric Power Research Institute Patentee after: State Grid Corporation of China Address before: 100085 Beijing city Haidian District Qinghe small Camp Road No. 15 Patentee before: China Electric Power Research Institute |