CN100424577C - Clamp-on filtering semiconductor light amplifier - Google Patents
Clamp-on filtering semiconductor light amplifier Download PDFInfo
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- CN100424577C CN100424577C CNB2005100192695A CN200510019269A CN100424577C CN 100424577 C CN100424577 C CN 100424577C CN B2005100192695 A CNB2005100192695 A CN B2005100192695A CN 200510019269 A CN200510019269 A CN 200510019269A CN 100424577 C CN100424577 C CN 100424577C
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Abstract
The present invention relates to a clamping filtering semiconductor optical amplifier which belongs to a semiconductor photoelectric device. Aiming at the present condition that the linear characteristic and the noise characteristic the existing semiconductor optical amplifier are to be improved, the present invention effectively improves the linear characteristic and noise characteristic which amplify optical signals; besides, the present invention has the functions of gain clamping and filtering. The optical signals to be amplified are input through an input optical fiber, and the wavelength of the optical signals is W3; the optical signals enter a semiconductor optical amplifier chip of which the center wavelength is 2 through a reflecting filter of which the center wavelength is W1, and the optical signals are amplified in the semiconductor optical amplifier chip; then, amplified optical signals are output through a transmission filter of which the center wavelength is W3 and an output optical fiber. Clamping laser power of the present invention is in inverse proportion to signal light power to form automatic control of the signal light power; the transmission filter only allows signal light to pass through, which can effectively filter amplified spontaneous radiation light and clamping light. Besides, the present invention integrates light-collecting amplification, gain clamping and filtering into integration, reduces technical links, reduces volume and greatly reduces production cost.
Description
Technical field
The invention belongs to semiconductor photoelectric device, be specifically related to a kind of semiconductor optical amplifier, have gain blocked and filter function.
Background technology
Semiconductor optical amplifier is a Primary Component of realizing two-forty, high capacity, long-distance optical fiber communication system, and it is simple in structure, needs Conversion of energy repeatedly unlike fiber amplifier, and the electrical efficiency height is with low cost.The semiconductor optical amplifier gain media is a semiconductor material, adopts the mode of injection current that the light signal of importing is amplified, and it amplifies wavelength and depends on semiconductor material type and component.The major part of common semiconductor optical amplifier is made up of input optical fibre, semiconductor optical amplifier chip and output optical fibre, as Chinese invention patent " a kind of travelling-wave semiconductor laser amplifier (TW-SLA) " (application number: 89100984), its gain meeting the gain saturation phenomenon occurs along with the increase of injecting signal light power, be the poor linearity of amplifier gain, limited the application of semiconductor optical amplifier like this in light signal amplification field with input signal light power.In addition, the noise of semiconductor optical amplifier is big, causes light signal serious through amplifier amplification back signal to noise ratio (S/N ratio) deterioration.
Summary of the invention
The present invention proposes a kind of clamp-on filtering semiconductor light amplifier, the present situation that remains to be improved at present semiconductor optical amplifier linear characteristic and noisiness, effectively improve linear characteristic and the noisiness that light signal is amplified, it has compact conformation and advantage cheaply simultaneously.
A kind of clamp-on filtering semiconductor light amplifier of the present invention, comprise input optical fibre, semiconductor optical amplifier chip, output optical fibre, described semiconductor optical amplifier chip comprises substrate, cushion, top covering, active area, under-clad layer, ohmic contact layer, and the top layer of chip and bottom are respectively upper and lower metal electrode layer and have upper and lower electrode respectively; It is characterized in that:
(1) optical signals input optical fibre input enters the semiconductor optical amplifier chip and obtains amplification through reflective filter, then the light signal that amplifies via transmission filter and output optical fibre output; Described reflective filter, semiconductor optical amplifier chip and transmission filter constitute active resonant cavity, form gain blocked laser;
(2) described semiconductor optical amplifier chip center wavelength is W2, its front end face and rear end face have and are approximately equal to 1 transmissivity, and the gain spectral wavelength coverage comprises W1 and W3, and the centre wavelength of gain spectral is positioned at optical fiber communication 850nm, 1310nm is in any one in three windows of 1550nm;
(3) described reflective filter centre wavelength is W1; Described transmission filter is that centre wavelength is the narrow-band optical filter of W3, and only allowing wavelength is that the flashlight of W3 passes through;
Wavelength W1, W2, three optical fiber communication window 850nm that the span of W3 coexists common, 1310nm is in any one among the 1550nm.
Described a kind of clamp-on filtering semiconductor light amplifier is characterized in that described reflective filter at wavelength W1 place, has to be not equal to 1 suitable reflectivity, has at wavelength W3 place to be approximately equal to 1 transmissivity; Described transmission filter is at wavelength W1 place, has to be approximately equal to 1 reflectivity, has at wavelength W3 place to be approximately equal to 1 transmissivity, and wavelength W1 is positioned at the edge of semiconductor optical amplifier chip gain spectral wavelength coverage; The distance of wavelength W3 and centre wavelength W2 is less than the distance of the distance of W1 and W2 and W3 and the W2 distance less than W3 and W1.
Described a kind of clamp-on filtering semiconductor light amplifier, described reflective filter can be made of fiber grating; Described transmission filter can be made of interference filter or fiber grating.
The present invention has the following advantages: the first, and it clamps down on laser power and signal light power is inversely proportional to, and forms the automatic control to signal light power.The second, transmission filter only allows flashlight to pass through, effectively filtering amplified spont-aneous emission light and clamp down on light.The 3rd, light harvesting amplifies, gain blocked and filtering is in one, and process procedure reduces, and volume reduces, production cost can reduce greatly.
Description of drawings
Fig. 1 is a kind of structural representation of the present invention;
Fig. 2 is one of the present invention and uses exemplary plot.
Embodiment
Below in conjunction with accompanying drawing the present invention is elaborated.
Fig. 1 is a kind of structural representation of the present invention.It is a kind of clamp-on filtering semiconductor light amplifier, is that transmission filter 6 and the output optical fibre 7 that the reflective filter 2 of W1, semiconductor optical amplifier chip 4 that centre wavelength is W2 and centre wavelength are W3 constitutes by input optical fibre 1, centre wavelength.Reflective filter 2 is at wavelength W1 place, has to be not equal to 1 suitable reflectivity, has at wavelength W3 place to be approximately equal to 1 transmissivity; Transmission filter 4 is at wavelength W1 place, has to be approximately equal to 1 reflectivity, has at wavelength W3 place to be approximately equal to 1 transmissivity; Wavelength W1 is positioned at the edge of semiconductor optical amplifier chip gain spectral wavelength coverage; Wavelength W3 is near centre wavelength W2, and promptly the distance of W3 and W2 is less than the distance of the distance of W1 and W2 and W3 and the W2 distance less than W3 and W1.The front end face 3 of semiconductor optical amplifier chip and rear end face 5 have and are approximately equal to 1 transmissivity, and the gain spectral wavelength coverage comprises W1 and W3.
In concrete the application, treat that the amplifying optical signals wavelength should be made as W3, by input optical fibre 1 input, enter semiconductor optical amplifier chip 4 and obtain amplification, then the light signal that amplifies via transmission filter 6 and output optical fibre 7 outputs through reflective filter 2.
Fig. 2 is one of the present invention and uses exemplary plot.The optical semiconductor amplification module that it is made up of semiconductor optical amplifier BGF of the present invention and input optoisolator 8, output optoisolator 9, current driving circuit 10 and temperature-control circuit 11 etc.Wherein, input optoisolator 8 is used to isolate the gain light and the amplified spont-aneous emission light clamped down on of image intensifer BGF generation, makes it can not produce disadvantageous interference for the optical transmitter of front end; Output optoisolator 9 is used to isolate the interference of rear end feedback light for image intensifer BGF; Current driving circuit 10 provides stable drive current for semiconductor optical amplifier BGF; Temperature-control circuit 11 provides stable working temperature for semiconductor optical amplifier BGF.
Fig. 1, Fig. 2 are descriptive rather than determinate to the explanation that the present invention did, and such as utilizing fiber grating that input optical fibre and reflective filter are united two into one among Fig. 1, perhaps output optical fibre and transmission filter are united two into one; And for example can adopt one or two optoisolators as required among Fig. 2.
Claims (3)
1. clamp-on filtering semiconductor light amplifier, comprise input optical fibre, semiconductor optical amplifier chip, output optical fibre, described semiconductor optical amplifier chip comprises substrate, cushion, top covering, active area, under-clad layer, ohmic contact layer, and the top layer of chip and bottom are respectively upper and lower metal electrode layer and have upper and lower electrode respectively; It is characterized in that:
(1) optical signals input optical fibre input enters the semiconductor optical amplifier chip and obtains amplification through reflective filter, then the light signal that amplifies via transmission filter and output optical fibre output; Described reflective filter, semiconductor optical amplifier chip and transmission filter constitute active resonant cavity, form gain blocked laser;
(2) described semiconductor optical amplifier chip center wavelength is W2, its front end face and rear end face have and are approximately equal to 1 transmissivity, and the gain spectral wavelength coverage comprises W1 and W3, and the centre wavelength of gain spectral is positioned at optical fiber communication 850nm, 1310nm is in any one in three windows of 1550nm;
(3) described reflective filter centre wavelength is W1; Described transmission filter is that centre wavelength is the narrow-band optical filter of W3, and only allowing wavelength is that the flashlight of W3 passes through;
Wavelength W1, W2, three optical fiber communication window 850nm that the span of W3 coexists common, 1310nm is in any one among the 1550nm.
2. a kind of clamp-on filtering semiconductor light amplifier as claimed in claim 1 is characterized in that described reflective filter has at wavelength W1 place and is not equal to 1 suitable reflectivity, has at wavelength W3 place to be approximately equal to 1 transmissivity; Described transmission filter has at wavelength W1 place and is approximately equal to 1 reflectivity, has at wavelength W3 place to be approximately equal to 1 transmissivity, and wavelength W1 is positioned at the edge of semiconductor optical amplifier chip gain spectral wavelength coverage; The distance of wavelength W3 and centre wavelength W2 is less than the distance of the distance of W1 and W2 and W3 and the W2 distance less than W3 and W1.
3. clamp-on filtering semiconductor light amplifier as claimed in claim 1 or 2 is characterized in that described reflective filter is made of fiber grating; Described transmission filter is made of interference filter or fiber grating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100192695A CN100424577C (en) | 2005-08-10 | 2005-08-10 | Clamp-on filtering semiconductor light amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100192695A CN100424577C (en) | 2005-08-10 | 2005-08-10 | Clamp-on filtering semiconductor light amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1737674A CN1737674A (en) | 2006-02-22 |
| CN100424577C true CN100424577C (en) | 2008-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100192695A Expired - Fee Related CN100424577C (en) | 2005-08-10 | 2005-08-10 | Clamp-on filtering semiconductor light amplifier |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255227B (en) * | 2011-04-29 | 2012-08-29 | 中国科学院上海光学精密机械研究所 | Fiber cladding light filter and manufacturing method thereof |
| CN102261967B (en) * | 2011-05-03 | 2012-11-07 | 上海大学 | Coaxial optical fiber-based temperature and stress dual-parameter optical fiber sensor |
| CN106226972A (en) * | 2016-08-31 | 2016-12-14 | 武汉光迅科技股份有限公司 | A kind of semiconductor optical amplifier operation control method and system |
| CN107482292B (en) * | 2017-07-18 | 2019-06-07 | 北京大学 | A kind of the Terahertz narrow band filter and its method of narrowband frequency-selecting and frequency tuning |
| JP6927785B2 (en) * | 2017-07-19 | 2021-09-01 | 住友電工デバイス・イノベーション株式会社 | Control method of optical amplifier and optical amplifier |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1387336A (en) * | 2002-06-18 | 2002-12-25 | 武汉光迅科技有限责任公司 | Wide-range extenal cavity tunable laser device |
| JP2004319750A (en) * | 2003-04-16 | 2004-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Gain-clamped optical amplifier module |
| US20040246567A1 (en) * | 2003-06-09 | 2004-12-09 | Joon Tae Ahn | Gain-clamped optical amplifier |
-
2005
- 2005-08-10 CN CNB2005100192695A patent/CN100424577C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1387336A (en) * | 2002-06-18 | 2002-12-25 | 武汉光迅科技有限责任公司 | Wide-range extenal cavity tunable laser device |
| JP2004319750A (en) * | 2003-04-16 | 2004-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Gain-clamped optical amplifier module |
| US20040246567A1 (en) * | 2003-06-09 | 2004-12-09 | Joon Tae Ahn | Gain-clamped optical amplifier |
Non-Patent Citations (2)
| Title |
|---|
| 增益钳制半导体光放大器的静态特性分析. 黄德修，王惠，刘德明.中国激光，第30卷第1期. 2003 |
| 增益钳制半导体光放大器的静态特性分析. 黄德修，王惠，刘德明.中国激光，第30卷第1期. 2003 * |
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| CN1737674A (en) | 2006-02-22 |
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