CN100422854C

CN100422854C - Method for reducing lead wire figure by T-shaped photoresist pattern

Info

Publication number: CN100422854C
Application number: CNB2004100543748A
Authority: CN
Inventors: 周孟兴; 傅国贵
Original assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Current assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date: 2004-09-08
Filing date: 2004-09-08
Publication date: 2008-10-01
Anticipated expiration: 2024-09-08
Also published as: CN1746772A

Abstract

The present invention provides a method for forming a shrunk guide line figure by using T-shaped photoresist patterns. The present invention uses a principle that exposure patterns can not be showed until constituent hydroxy joins reaction when a chemical enhanced photoresist layer is patterned, the chemical enhanced photoresist layer is formed on a semiconductor substrate, and a hydrogen ion at the top end of chemical enhanced photoresist is caught by an ammonia ion through a gas containing ammonia. Thereby, the top end can not join the reaction when the chemical enhanced photoresist layer is patterned, the T-shaped photoresist patterns are showed, and further, the guide line figure with a size which is smaller than the size of guide line patterns obtained by the known technology can be obtained when the guide line patterns are deposited on the semiconductor substrate.

Description

Use T type photoresist pattern to form the method for dwindling wire pattern

Technical field

The present invention relates to a kind of method that forms wire pattern, the particularly a kind of T of use type photoresist pattern forms the method for dwindling wire pattern.

Background technology

For many years, the development of integrated circuit technique is always according to so-called Moore's Law (Moore ' s Law), to be implemented in the speed that number of transistors doubles in the identical chip area in per approximately 18 months, continue to promote the integrated level of IC, to strengthen its speed and function.Yet the resolution of etching system optical design has now reached system limits, therefore present general trend all trends towards using the mask such as approaching (the optical proximity correction of correction of optics of special designing treatment, OPC) and the phase-shift mask version (phase shift mask PSM) promotes resolution.

When the pattern line-width of mask during less than the wavelength of exposure light source, for example in fine rectangle pattern, four corners of pattern will produce the fillet phenomenon because of the diffraction of light, thereby need to use the approaching technology of revising of optics as adding auxiliary patterns or changing pattern line.And the phase-shift type mask is to add last layer phase shift layer (phase shift layer) in zone, mask top, though optics can be made the circuit of width under the deep-submicron near correction and phase-shift mask version, but the making of its mask and detection, and the complexity of line design has but increased technologic cost significantly.

Summary of the invention

Fundamental purpose of the present invention is to provide a kind of T of use type photoresist pattern to form the method for dwindling wire pattern, and it can be reduced in effectively to enter and form the cost with wire pattern of reduced size under the deep submicron process.

Another object of the present invention is to provide a kind of T of use type photoresist pattern to form the method for dwindling wire pattern, and it need not use expensive phase shift mask promptly can form the wire pattern size that is equally applicable under the deep submicron process.

A further object of the present invention is to provide a kind of T of use type photoresist pattern to form the method for dwindling wire pattern, and it utilizes existing chemical enhancement type photoetching gum material behavior, forms the wire pattern with reduced size.

For achieving the above object, the invention provides a kind of T of use type photoresist pattern and form the method for dwindling wire pattern, it provides a Semiconductor substrate earlier; On Semiconductor substrate, form a chemical enhancement type photoetching gum layer then; Utilize a mask that the chemical enhancement type photoetching gum layer is exposed again; Feed a kind of gas that contains ammonia then, make ammonium ion catch the hydrogen ion that is positioned at chemical enhancement type photoetching gum layer top, and then the chemical enhancement type photoetching gum layer is toasted, develops, to form a T type patterning photoresist layer; At last, be that mask carries out the wire pattern deposition on Semiconductor substrate with T type patterning photoresist layer, remove T type patterning photoresist layer at last, promptly obtain a wire pattern with reduced size.

After adopting this method, can be under the prerequisite that need not develop new material, form required wire pattern live width size under the deep-submicron size, reduced the huge cost cost of deep submicron process in the mask design by a larger margin, thereby improved the competitiveness of product in market effectively.

Description of drawings

Fig. 1 to Fig. 5 is each step structure cutaway view of the present invention.

Label declaration:

10 Semiconductor substrate

12 chemical enhancement type photoetching gum layers

14 mask

16T type patterning photoresist layer

18 etching windows

20 wire patterns

Embodiment

The present invention relates to a kind of T of use type photoresist pattern and form the method for dwindling wire pattern, see also Fig. 1 to Fig. 5, this is each step structure cutaway view of a preferred embodiment of the present invention.

At first see also Fig. 1, on a Semiconductor substrate 10, form a chemical enhancement type photoetching gum layer (chemicalamplified resist, CAR) 12, wherein the matrix resin of chemical enhancement type photoetching gum layer 12 (matrix resin) composition is selected from cresolase phenolic aldehyde (cresol novolac) or poly-oxybenzene ethene (poly hydroxy styrene), and the light acid producing agent of chemical enhancement type photoetching gum layer 12 (poly acid generator) is selected from salt (onium salt) or S-three Xian derivants (S-triazine derivative), and the bond agent of chemical enhancement type photoetching gum layer 12 (crosslinking agent) is selected from melamine derivative (melamine derivative) or benzylated polyol derivant (benzyl alcohol derivative).

Then; as shown in Figure 2; with a mask 14 with big line width patterns is mask; chemical enhancement type photoetching gum layer 12 is exposed; this moment is because chemical enhancement type photoetching gum layer 12 is after the hydroxy on the poly-oxybenzene ethene (polyhydroxystyrene) of alkali soluble is covered with protecting group (protection site); cooperate light acid producing agent (photo acidgenerator again; PGA); and become the insoluble resin of alkaline imaging liquid; so when chemical enhancement type photoetching gum layer 12 is exposed; to make the light acid producing agent of chemical enhancement type photoetching gum layer 12 that protecting group is decomposed (partly representing to produce the resin of photolysis reactions in the drawings with oblique line), thereby expose hydroxy (not expression in the drawings).Then Semiconductor substrate 10 surfaces are fed a kind of gas that contains ammonia, make ammonium ion (NH3) catch the hydrogen ion (H on chemical enhancement type photoetching gum layer top ⁺), so will cause the hydrogen ion on chemical enhancement type photoetching gum layer 12 top to present the state that lacks, and cause participating in developing reaction.Then, with about 100 ℃ chemical enhancement type photoetching gum layer 12 toasted scission of link with the catalysis photoresist, chemical enhancement type photoetching gum layer 12 formed potential image develop, at last to form a T type patterning photoresist layer 16 as shown in Figure 3 again when exposing in order to form.

Then, be mask with T type patterning photoresist layer 16, on Semiconductor substrate 10, carry out the lead depositing of thin film, wherein the material of lead film can be metal or polysilicon.This moment is because T type patterning photoresist layer 16 is a T type shape with big apex area, to make when carrying out the lead thin film deposition, the ion beam that can pass etching window 18 diminishes, thereby on Semiconductor substrate 10 deposition form one originally mask 14 (consulting Fig. 2) go up the little wire pattern 20 of live width, as shown in Figure 4, then, remove T type patterning photoresist layer 16, promptly form the wire pattern with less live width 20 as shown in Figure 5.

The present invention uses T type photoresist pattern to form the method for dwindling wire pattern, it utilizes the characteristic of existing chemical enhancement type photoetching gum agent, form the demand that needs to form figure under the situation that the integrated level that goes for element significantly increases with reduced size conductor width, and can reduce known forming mask cost effectively, increase substantially the competitiveness of product in market with the required cost of reduced size lead live width for reaching.

Above-described embodiment is only in order to illustrate technological thought of the present invention and characteristics; its purpose makes those of ordinary skill in the art can understand content of the present invention and is implementing according to this; the scope of this patent also not only is confined to above-mentioned specific embodiment; be all equal variation or modifications of doing according to disclosed spirit, still be encompassed in protection scope of the present invention.

Claims

1. one kind is used T type photoresist pattern to form the method for dwindling wire pattern, and it comprises the following steps:

A Semiconductor substrate is provided;

On this Semiconductor substrate, form a chemical enhancement type photoetching gum layer;

With a mask is mask, and this chemical enhancement type photoetching gum layer is exposed;

This semiconductor substrate surface is fed a kind of gas that contains ammonia, make ammonium ion catch the hydrogen ion on this chemical enhancement type photoetching gum layer top, then this chemical enhancement type photoetching gum layer is toasted, develops, to form a T type patterning photoresist layer;

And

With this T type patterning photoresist layer is mask, and this Semiconductor substrate is carried out the wire pattern deposition, removes this T type patterning photoresist layer at last;

The matrix resin composition of described chemical enhancement type photoetching gum layer is poly-oxybenzene ethene.

2. use T type photoresist pattern according to claim 1 forms the method for dwindling wire pattern, it is characterized in that: the light acid producing agent of this chemical enhancement type photoetching gum layer be selected from salt, S-three Xian derivants one of them.

3. use T type photoresist pattern according to claim 1 forms the method for dwindling wire pattern, it is characterized in that: the bond agent of this chemical enhancement type photoetching gum layer be selected from melamine derivant, benzylated polyol derivant one of them.

4. use T type photoresist pattern according to claim 1 forms the method for dwindling wire pattern, and it is characterized in that: the baking temperature of this chemical enhancement type photoetching gum layer is 100 ℃.

5. use T type photoresist pattern according to claim 1 forms the method for dwindling wire pattern, it is characterized in that: the material of this lead be selected from metal, polysilicon one of them.