CN100419131C - Method of preparing rod, wire and hexagonal shaped C60 monocrystal - Google Patents
Method of preparing rod, wire and hexagonal shaped C60 monocrystal Download PDFInfo
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- CN100419131C CN100419131C CNB2004100111886A CN200410011188A CN100419131C CN 100419131 C CN100419131 C CN 100419131C CN B2004100111886 A CNB2004100111886 A CN B2004100111886A CN 200410011188 A CN200410011188 A CN 200410011188A CN 100419131 C CN100419131 C CN 100419131C
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Abstract
The present invention relates to a method for preparing rod-shaped linear hexagonal C60 monocrystals, which belongs to a crystal growth method. The C60 monocrystals are prepared by the process: preparing C60 xylene solution, cleaning a substrate, dripping to form a solution film and volatilizing the solvent. The present invention comprises: C60 powder is put into xylene solution for ultrasonic dissolving to obtain C60 xylene solution, and the solution concentration is controlled within the range of 0.01 to 1 times saturated solution; the C60 xylene solution is dripped onto a dry clean glass or Si substrate by a drip tube with a rubber head and is luxuriated into a solution film; when the environmental temperature is within the ranged of-15 DEG C to 80 DEG C, rod-shaped or linear hexagonal C60 monocrystals with different diameters and different length-diameter ratios can be prepared by controlling the volatilization rate of the solvent; when the environmental temperature is from 100 to 150 DEG C, hexagonal C60 monocrystals can be prepared. The present invention has simple operation, controllable product shape and capability of preparing C60 monocrystals with high crystallinity and different shapes; because the products grow on solid substrates, the products are conveniently applied to the aspects, such as device manufacture, etc.
Description
Technical field
The invention belongs to the method for crystal growth, particularly accurate one dimension C
60Monocrystalline and sexangle C
60The preparation method of nanocrystal.
Background technology
C
60Be to discover in 1985 by H.Kroto scientists such as (Nature, Vol.318,162,1985).C
60Be semiconductor material, energy gap is 1.8eV.C
60Has excellent physical properties such as ferromegnetism, supraconductivity at low temperatures.Through adulterated C
60Superconducting transition temperature can reach more than the 50K.C
60Good electrical properties causes preparing difform C
60Crystal, particularly C
60Monocrystalline becomes the focus of research and the target that everybody makes great efforts.
At present relevant C
60The preparation method of monocrystalline utilizes C
60The distillation crystallization process is applicable to preparation C
60Film.About preparing accurate one dimension C
60The report of monocrystalline is few.People such as K.Miyazawa disclose between two kinds of liquid levels at Journal ofMaterial Research vol 17 83 2002 and have grown C
60" nanometer " line.They adopt following method: with C
60Be dissolved in and be prepared into saturated C in the toluene solvant
60Toluene solution is poured solution in the vial of cleaning, injects isopropyl alcohol again in vial, because the density of isopropyl alcohol is littler than the density of toluene, so isopropyl alcohol floats on C
60Above the toluene solution, thus at two kinds of liquid intermediate formation liquid-liquid interface, bottle was left standstill about ten days, between liquid-liquid interface, just grown C
60Nano wire, its cross section are pentagram.
But, because C
60Nanowire growth is between liquid-liquid interface, so C
60The growth of nano wire is difficult to control.And the C that obtains
60Nano wire can not be fixed on the substrate well, and whether this can use for it or caused difficulty for further studying.
Summary of the invention
The technical problem to be solved in the present invention is to grow quasi-one-dimensional or hexagonal C on different substrates
60Monocrystalline is by changing C
60The envrionment temperature of the concentration of solution, the evaporation rate of solvent and substrate is prepared different size and difform C
60Monocrystalline.
Preparation of the present invention is bar-shaped, wire and sexangle C
60The method of monocrystalline is as follows:
With C
60Powder is that raw material, dimethylbenzene are solvent, through producing C
60The process of xylene solution, cleaning substrate, dropping liquid film, solvent flashing makes C
60Monocrystalline.The said C that produces
60Xylene solution is, with C
60Powder is put into the dimethylbenzene ultrasonic dissolution, and strength of solution is in the scope of 0.01～1 times of saturated solution; Said cleaning substrate is to clean and drying with alcohol and deionization pure water; Said dropping liquid film is to use glue head dropper with C
60Xylene solution drops on the substrate and is extended to liquid film; Said solvent flashing is, under envrionment temperature-20～150 ℃ condition, in 0.003～85 hour solvent volatilized fully, grows C on substrate
60Monocrystalline.
Produce C
60Xylene solution can be with excessive C
60Powder is put into dimethylbenzene and ultrasonic dissolution, then with solution left standstill, treats excessive C
60Post precipitation shifts out upper solution fully, and this solution is C
60The dimethylbenzene saturated solution; Can make C by the xylene solvent that in this saturated solution, injects different amounts
60The concentration of xylene solution is in the scope of 0.01～1 times of saturated solution.
Cleaning substrate should make the surface of substrate not have dust and other impurity.Said substrate be not with C
60The substrate that reacts with dimethylbenzene is as silicon chip and sheet glass etc.
The dropping liquid film can be that the substrate with dry cleansing places on the levelling bench, with glue head dropper with the C for preparing
60Xylene solution drops on the substrate, and solution will be extended to a uniform liquid film on the surface of substrate, can roughly control the thickness that forms liquid film by the quantity of drop.
Solvent flashing can volatilize in air naturally, watch-glass can be covered on the evaporation rate of substrate top with the control solvent.The evaporation rate of solvent not only relies on control substrate top gas flow speed, also will consider thickness, the envrionment temperature of solution liquid film on the substrate.After treating that solvent volatilizees fully, then on substrate, grow the C that estimates shape and size
60Monocrystalline.
At preparation C
60In the process of monocrystalline, can be by the C of configuration different concns
60The thickness of the evaporation rate of xylene solution, control solvent, the liquid film that forms on substrate and the envrionment temperature of substrate are controlled C
60The growth of monocrystalline obtains different size and difform C
60Monocrystalline.Generate different size and difform C
60The major influence factors of monocrystalline is the evaporation rate of solvent, is embodied on volatilization time and the envrionment temperature.
The preparation diameter is that the length-to-diameter ratio of 100～600nm is the bar-shaped C of 10 times of magnitudes
60Monocrystalline, (15～40 ℃) carry out at normal temperatures, can select the lower C of concentration for use
60Xylene solution is at 2 * 2cm
2Drip 1～2 solution with glue head dropper on the substrate of size and make it form thin liquid film, and control solvent and in 2～5 minutes, volatilize and finish, can obtain the less bar-shaped C of diameter
60Monocrystalline.Along with the solvent evaporates time increases, bar-shaped C
60Crystal will be elongated, can prepare length-to-diameter ratio and reach 10
2The wire C that magnitude is above
60Monocrystalline, or claim C
60Single crystal wire.
Bar-shaped or the wire C of preparation diameter micron dimension
60Monocrystalline, can select concentration range for use is the C of 1/6～1 times of saturation concentration
60Xylene solution is at 2 * 2cm
2Drip 2～6 C with glue head dropper on the substrate of size
60Xylene solution, forming thick slightly liquid film, when solvent when clock time was evaporated completely in 30～60 minutes, prepare the bigger bar-shaped C of diameter
60When being evaporated completely in about 3～20 hours, monocrystalline, solvent prepare C
60Single crystal wire.
That is, on substrate, prepare bar-shaped or wire C
60Monocrystalline, the envrionment temperature of substrate are preferably in 15～40 ℃ of scopes; Obtain the different length-to-diameter ratios of different diameter, importantly control solvent evaporates speed (volatilization time) well, preferably select 2～1200 minutes.
When the envrionment temperature of substrate reaches 100～150 ℃, treat that solvent evaporates is intact, on substrate, can prepare hexagonal C
60Monocrystalline; And crystal size reduces and diminishes with thickness of liquid film on strength of solution and the substrate, diminishes with the shortening of volatilization time.
Compare with background technology, method of the present invention has a lot of outstanding advantages aspect the product of preparation technology and preparation, mainly show as: can prepare high high-quality bar-shaped, wire of crystallization degree and sexangle C60 monocrystalline; Product can be grown on the solid substrate, greatly facilitate the later application of this product at the device manufacturing method face; The shape of product can be controlled, and the condition that can control is more, prepares own required product by the control preparation condition; Be exactly that present method operation is very simple in addition, but product but very have application prospect.
Embodiment
Embodiment 1 provides a bar-shaped C of concrete preparation
60The example of monocrystalline.
Selecting concentration is the C of 1/20 saturation concentration
60Xylene solution can be with 2 * 2cm
2The Si sheet of size uses glue head dropper with 1～2 C as substrate
60Xylene solution drips to do on the clean Si substrate and forms liquid film, is placed under the normal temperature environment, and after solvent was evaporated completely naturally in about about 5 minutes, be about 150 nanometers then obtaining diameter on the Si substrate, length-to-diameter ratio reaches the bar-shaped C of tens (10 times of magnitudes)
60Monocrystalline.
2 * 2cm
2The substrate of size can carry 5,6 C at most
60Xylene solution more greatly a bit also can many number of C if substrate surface is long-pending
60Xylene solution.
Embodiment 2 provides a bar-shaped C of concrete preparation
60The example of monocrystalline.
Selecting concentration is the C of 1/6 saturation concentration
60Xylene solution is with 2 * 2cm
2Size Si sheet uses glue head dropper with 1～2 this C as substrate
60Xylene solution drips to do on the clean Si substrate and forms liquid film, is placed under the normal temperature environment, does not cover watch-glass, after solvent was evaporated completely naturally in about about 5 minutes, is about 200 nanometers obtaining diameter on the Si substrate then, and length-to-diameter ratio reaches the bar-shaped C of tens (10 times of magnitudes)
60Monocrystalline.
Embodiment 3 provides the C of an accurate one-dimensional rod-like of concrete preparation
60The example of monocrystalline.
Select the C of 4/6 or 5/6 saturation concentration
60Xylene solution is with 2 * 2cm
2The Si sheet of size uses glue head dropper with 1～2 C as substrate
60Xylene solution drips to do on the clean Si substrate and forms liquid film, be placed under the normal temperature environment, do not cover watch-glass, after solvent evaporates was intact in about about 5 minutes, then on the Si substrate, all can obtain about 400～500 nanometers of diameter, the accurate one-dimensional rod-like C of length-to-diameter ratio about tens (10 times of magnitudes)
60Monocrystalline.
Comparing embodiment 1～3, as can be seen, under the identical situation of drips of solution number (can be considered sample path length), solvent evaporates time, envrionment temperature, C
60The concentration of xylene solution is big more, then C
60The diameter of monocrystalline is big more, and vice versa.
Embodiment 4 provides a bar-shaped C of concrete preparation
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean Si sheet of size uses glue head dropper with 3 C as substrate
60Xylene solution drips on the Si substrate and forms liquid film, be placed under the normal temperature environment, do not cover watch-glass, artificial acceleration substrate top gas flow speed is with the volatilization of accelerated solvent, after solvent evaporates was intact in about about 5 minutes, then reach about 1 micron obtaining diameter on the Si substrate, most length-to-diameter ratios are at 50～80 bar-shaped C
60Monocrystalline.
With embodiment 1～3 relatively, as can be seen, under identical situation of solvent evaporates time, envrionment temperature, C
60The concentration of xylene solution is big more, and the drips of solution number is many, and ie in solution thickness is bigger, the C that then makes
60It is big that the diameter of monocrystalline becomes.
Embodiment 5 provides a bar-shaped C of concrete preparation
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean Si sheet of size uses glue head dropper with 1 C as substrate
60Xylene solution drips on the Si substrate and forms liquid film, is placed under the normal temperature environment, does not cover watch-glass, after solvent evaporates was intact in about about 2～5 minutes, then obtains diameter and reach tens (10 order of magnitude) nanometer on the Si substrate, and length-to-diameter ratio reaches the bar-shaped C of tens (10 magnitudes)
60Monocrystalline.
If envrionment temperature is brought up to about 50 ℃, artificial acceleration substrate top gas flow speed makes solvent finish volatilization in 12 seconds with the volatilization of accelerated solvent, makes about diameter 100 nanometers, and length-to-diameter ratio reaches the bar-shaped C of tens (10 magnitudes)
60Monocrystalline.
Embodiment 6 provides a bar-shaped C of concrete preparation
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2Size is done clean Si sheet as substrate, uses glue head dropper with 3 C
60Xylene solution drips to do on the clean Si substrate and forms liquid film, is placed under the normal temperature environment, does not cover watch-glass, after solvent evaporates was intact in about about 30 minutes, then obtains diameter at 1～2 micron on glass substrate, and most length-to-diameter ratios are at 30～60 bar-shaped C
60Monocrystalline.
If envrionment temperature rises to 80 ℃, then about 12 clock left and right sides solvent evaporates are intact, obtain diameter and be about 1 micron on the Si substrate, and length-to-diameter ratio reaches the bar-shaped C about 30
60Monocrystalline.C
60Monocrystalline is owing to solvent evaporates under 80 ℃ of environment accelerates (the volatilization time shortens), and the diameter of monocrystalline and length can diminish.
Embodiment 7 provides a bar-shaped C of concrete preparation
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean sheet glass of size uses glue head dropper with 3 C as substrate
60Xylene solution drips on the sheet glass substrate and forms liquid film, is placed under the normal temperature environment, does not cover watch-glass, after about about 30 minutes solvent evaporates are intact, then obtains diameter at 1～2 micron on the Si substrate, and most length-to-diameter ratios are at 30～60 bar-shaped C
60Monocrystalline.
Comparing embodiment 6,7 shows, uses sheet glass as substrate, under all the other condition same cases, and uses Si as substrate preparation C
60The effect of monocrystalline does not have difference.To other embodiment also is like this.
Embodiment 8 provides a concrete preparation wire C
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean Si sheet of size uses glue head dropper with 3 C as substrate
60Xylene solution drips on the Si substrate and forms liquid film, be placed under the normal temperature environment, unsettled above substrate (apart from substrate 0.5cm) covers a watch-glass, after solvent evaporates was intact in about 60 minutes, then reach about 4 microns obtaining diameter on the Si substrate, most length-to-diameter ratios are at 700～800 wire C
60Monocrystalline.
Embodiment 9 provides a concrete preparation wire C
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean Si sheet of size uses glue head dropper with 3 C as substrate
60Xylene solution drips on the Si substrate and forms liquid film, is placed under the normal temperature environment, and cover one watch-glass above substrate after solvent evaporates was intact in about 3～5 hours, then obtains diameter and reaches about several microns on the Si substrate, and length-to-diameter ratio reaches 1,000 wire C
60Monocrystalline.
Embodiment 10 provides a concrete preparation wire C
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean Si sheet of size uses glue head dropper with 3 C as substrate
60Xylene solution drips on the Si substrate and forms liquid film, places under the normal temperature environment cover one watch-glass above substrate, and its integral body put into a seal closure, after 20--80 hour time range internal solvent is evaporated completely, then reach about 3 microns obtaining diameter on the Si substrate, length-to-diameter ratio reaches several thousand wire C
60Monocrystalline.
To prepare C
60The envrionment temperature of monocrystalline is reduced to-15 ℃, does not put into seal closure, after 48 hours solvent evaporates are intact, then obtain diameter and reach about 2 microns on the Si substrate, and length-to-diameter ratio reaches the wire C about 1000
60Monocrystalline.
Embodiment 11 provides a concrete preparation wire C
60The example of monocrystalline.
Select saturated C
60Xylene solution is with 2 * 2cm
2The dried clean Si sheet of size uses glue head dropper with 5 C as substrate
60Xylene solution drips on the Si substrate and forms liquid film, is placed under the normal temperature environment, does not cover watch-glass, after about about 60 minutes solvent evaporates are intact, then obtain diameter and reach and be that micron dimension, length-to-diameter ratio reach about hundreds of (10 on the Si substrate
2Magnitude) wire C
60Monocrystalline.
Comparing embodiment 5,7,11 as can be seen, C
60Xylene solution concentration, envrionment temperature are identical, solvent volatilizees naturally, drip many volatilization time of number will grow, but drip several little to the single crystal growing influence; The time length of on the contrary volatilizing is the important factor of decision single crystal growing---long then monocrystalline of volatilization time is looked slightly, length.
Embodiment 12 provides a concrete preparation sexangle C
60The example of monocrystalline.
Select saturated C
60Xylene solution with doing clean Si sheet as substrate, uses glue head dropper with 5 C
60Xylene solution drips on the Si substrate and forms liquid film, is placed under 120 ℃ the temperature environment, does not cover watch-glass, after solvent evaporates was intact in about about 1 minute, then obtains the size sexangle C about several microns approximately on the Si substrate
60Monocrystalline.
Embodiment 13 provides a concrete preparation sexangle C
60The example of monocrystalline.
Selecting concentration is 1/6 C of saturated solution concentration
60Xylene solution with doing clean Si sheet as substrate, uses glue head dropper with 5 C
60Xylene solution drips on the Si substrate and forms liquid film, is placed under 120 ℃ the temperature environment, does not cover watch-glass, treat that about about 1 minute solvent evaporates is intact after, then on the Si substrate, obtain the about 1 micron sexangle C of size
60Monocrystalline.
If temperature environment changes 100 ℃ or 150 ℃ into, all the other conditions are constant, and the intact time of solvent evaporates becomes more than 1 minute (about 110 seconds) or is less than 1 minute (about 26 seconds), still obtains the about 1 micron sexangle C of size on the Si substrate
60Monocrystalline.
Claims (8)
1. one kind prepares bar-shaped C
60The method of monocrystalline is with C
60Powder is raw material, with C
60Be dissolved in and be prepared into saturated C in the solvent
60Solution is characterized in that, said solvent is a dimethylbenzene; Through producing C
60The process of xylene solution, cleaning substrate, dropping liquid film, solvent flashing makes C
60Monocrystalline; The said C that produces
60Xylene solution is to make the scope of strength of solution at 0.01～1 times of saturated solution; Said cleaning substrate is to clean and drying with alcohol and deionization pure water; Said dropping liquid film is to use glue head dropper with C
60Xylene solution drops on the substrate and is extended to liquid film; Said solvent flashing is under 15～80 ℃ of conditions of envrionment temperature, in 0.2～30 minute solvent to be volatilized fully.
2. according to the bar-shaped C of the described a kind of preparation of claim 1
60The method of monocrystalline is characterized in that, the said C that produces
60Xylene solution is with excessive C
60Powder is put into the dimethylbenzene ultrasonic dissolution, then with solution left standstill, treats excessive C
60Post precipitation shifts out upper solution fully, and this solution is C
60The dimethylbenzene saturated solution; Obtain the C of concentration by in this saturated solution, injecting xylene solvent again in the scope of 0.01～1 times of saturated solution
60Xylene solution.
3. according to claim 1 or the bar-shaped C of 2 described a kind of preparations
60The method of monocrystalline is characterized in that, the envrionment temperature of substrate is 15～40 ℃ of scopes, and the solvent evaporates time is selected 2～5 minutes, prepares bar-shaped C on substrate
60Monocrystalline.
4. one kind prepares wire C
60The method of monocrystalline is with C
60Powder is raw material, with C
60Be dissolved in and be prepared into saturated C in the solvent
60Solution is characterized in that, said solvent is a dimethylbenzene; Through producing C
60The process of xylene solution, cleaning substrate, dropping liquid film, solvent flashing makes C
60Monocrystalline; The said C that produces
60Xylene solution is to make the scope of strength of solution at 0.01～1 times of saturated solution; Said cleaning substrate is to clean and drying with alcohol and deionization pure water; Said dropping liquid film is to use glue head dropper with C
60Xylene solution drops on the substrate and is extended to liquid film; Said solvent flashing is under envrionment temperature-15～40 ℃ condition, in 1～80 hour solvent to be volatilized fully.
5. according to the described a kind of preparation wire C of claim 4
60The method of monocrystalline is characterized in that, the said C that produces
60Xylene solution is with excessive C
60Powder is put into the dimethylbenzene ultrasonic dissolution, then with solution left standstill, treats excessive C
60Post precipitation shifts out upper solution fully, and this solution is C
60The dimethylbenzene saturated solution; Obtain the C of concentration by in this saturated solution, injecting xylene solvent again in the scope of 0.01～1 times of saturated solution
60Xylene solution.
6. according to claim 4 or 5 described a kind of preparation wire C
60The method of monocrystalline is characterized in that, the envrionment temperature of substrate is 15～40 ℃ of scopes, and the solvent evaporates time is selected 1～20 hour, prepares wire C on substrate
60Monocrystalline.
7. one kind prepares sexangle C
60The method of monocrystalline is with C
60Powder is raw material, with C
60Be dissolved in and be prepared into saturated C in the solvent
60Solution is characterized in that, said solvent is a dimethylbenzene; Through producing C
60The process of xylene solution, cleaning substrate, dropping liquid film, solvent flashing makes C
60Monocrystalline; The said C that produces
60Xylene solution is to make the scope of strength of solution at 0.01～1 times of saturated solution; Said cleaning substrate is to clean and drying with alcohol and deionization pure water; Said dropping liquid film is to use glue head dropper with C
60Xylene solution drops on the substrate and is extended to liquid film; Said solvent flashing is under 100～150 ℃ of conditions of envrionment temperature, in 26～110 seconds solvent to be volatilized fully.
8. according to the described a kind of preparation sexangle C of claim 1
60The method of monocrystalline is characterized in that, the said C that produces
60Xylene solution is with excessive C
60Powder is put into the dimethylbenzene ultrasonic dissolution, then with solution left standstill, treats excessive C
60Post precipitation shifts out upper solution fully, and this solution is C
60The dimethylbenzene saturated solution; Obtain the C of concentration by in this saturated solution, injecting xylene solvent again in the scope of 0.01～1 times of saturated solution
60Xylene solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100111886A CN100419131C (en) | 2004-11-01 | 2004-11-01 | Method of preparing rod, wire and hexagonal shaped C60 monocrystal |
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|---|---|---|---|
| CNB2004100111886A CN100419131C (en) | 2004-11-01 | 2004-11-01 | Method of preparing rod, wire and hexagonal shaped C60 monocrystal |
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| CN1624210A CN1624210A (en) | 2005-06-08 |
| CN100419131C true CN100419131C (en) | 2008-09-17 |
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| CN103214411A (en) * | 2013-04-28 | 2013-07-24 | 东华大学 | Preparation method of fullerene microsphere with crinkly surface |
| WO2015166416A1 (en) | 2014-04-29 | 2015-11-05 | Sol Voltaics Ab | Methods of capturing and aligning an assembly of nanowires |
| CN106629667A (en) * | 2017-01-04 | 2017-05-10 | 青岛科技大学 | Method for preparing fullerene square lamellar crystals |
| CN107445141A (en) * | 2017-09-22 | 2017-12-08 | 青岛科技大学 | A kind of short-cut method for preparing the square platelet of fullerene |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1077186A (en) * | 1993-04-01 | 1993-10-13 | 北京大学 | Method with recrystallization method separation, purification of Fuller olefinic carbon carbon 70 |
| CN1084502A (en) * | 1992-09-19 | 1994-03-30 | 北京大学 | The method of separation, purification of Fuller olefinic carbon carbon 60 |
-
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- 2004-11-01 CN CNB2004100111886A patent/CN100419131C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1084502A (en) * | 1992-09-19 | 1994-03-30 | 北京大学 | The method of separation, purification of Fuller olefinic carbon carbon 60 |
| CN1077186A (en) * | 1993-04-01 | 1993-10-13 | 北京大学 | Method with recrystallization method separation, purification of Fuller olefinic carbon carbon 70 |
Non-Patent Citations (2)
| Title |
|---|
| x-ray-diffraction study of the phase transition in a C60 singlecrystal. H.Kasatani et al.Physical Review B,Vol.47 No.7. 1993 |
| x-ray-diffraction study of the phase transition in a C60 singlecrystal. H.Kasatani et al.Physical Review B,Vol.47 No.7. 1993 * |
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