CN100412226C - Method for manufacturing front substrate of plasma display, vapor deposition process and apparatus therefor - Google Patents
Method for manufacturing front substrate of plasma display, vapor deposition process and apparatus therefor Download PDFInfo
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- CN100412226C CN100412226C CNB2004100840320A CN200410084032A CN100412226C CN 100412226 C CN100412226 C CN 100412226C CN B2004100840320 A CNB2004100840320 A CN B2004100840320A CN 200410084032 A CN200410084032 A CN 200410084032A CN 100412226 C CN100412226 C CN 100412226C
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Abstract
The present invention relates to a vapor plating device which mainly comprises a chamber, a gas conduit, a vapor plating source and an air extracting pump, wherein the gas conduit is arranged in the chamber and is provided with a plurality of holes. Gas flow rate led by the hole adjacent to the air extracting pump is bigger than that led by other holes, which is convenient for compensating gas quantity extracted by the air extracting pump before the reaction with molecules of the vapor plating source so as to form a film layer with good crystal formation uniformity.
Description
Technical field
The invention relates to a kind of manufacturing process and process unit of film, and particularly about a kind of plasma display (Plasma Display Panel, PDP) invention of the manufacture method of substrate (front substrate) and evaporation (evaporation) technology and device before.
Background technology
Along with multimedia development, also increase day by day as the importance of the indicating meter at the communication interface of people and computer interface.In recent years, flat-panel screens has replaced traditional cathode-ray tube display especially significantly.At present flat-panel screens mainly contains following several: plasma display, display of organic electroluminescence (OrganicElectro-Luminescent Display, OELD) and liquid-crystal display (LiquidCrystal Display, LCD) etc.Wherein, plasma display with its large size, luminous, no visual angle is interdependent, frivolous and advantage such as full color and have great application potential, is expected to become the main flow of follow-on flat-panel screens.
Present plasma display mainly is made of prebasal plate (front substrate), metacoxa (rear substrate) and discharge gas.Fig. 1 is the schematic perspective view of known plasma display.Please refer to Fig. 1, plasma display 100 mainly is made of prebasal plate 110, metacoxa 120 and the reactant gases (not expressing among the figure) between prebasal plate 110 and metacoxa 120.Wherein, prebasal plate 110 mainly is made of substrate 112, X electrode 114, Y electrode 116, dielectric layer 118 and protective layer 119.X electrode 114 mainly is made of transparency electrode 114a and bus electrode (bus electrode) 114b, and Y electrode 116 then is made of transparency electrode 116a and bus electrode 116b.In the present plasma display; the material of transparency electrode 114a and transparency electrode 116b is indium tin oxide (Indium Tin Oxide normally; ITO); but because the electroconductibility of indium tin oxide and metal are still comparatively not enough by contrast; so the bus electrode 114b and the bus electrode 116b of metal material can be set respectively usually, so that increase the electroconductibility of X electrode 114 and Y electrode 116 on transparency electrode 114a and transparency electrode 116a.And bus electrode 114b and bus electrode 116b are positioned at beyond the light-emitting zone, therefore can't influence the luminous efficiency of plasma display.
Metacoxa 120 mainly is made of substrate 122, address electrode (addresselectrode) 124, dielectric layer 126, barrier rib (rib) 128 and fluorescent material layer 129.Wherein, address electrode 124 is arranged on the substrate 122, and dielectric layer 126 is arranged on the substrate 122, and covers address electrode 124.Generally speaking, 128 of barrier ribs are arranged between the adjacent address electrode 124, and form a plurality of discharge spaces 127 on substrate 122.129 of fluorescent material layers are arranged on the dielectric layer 126 in the discharge space 127, and cover the sidewall of barrier rib 128.In addition, discharge gas (not expressing among the figure) is arranged within the discharge space 127.
Because plasma display must have stability in discharge; just can demonstrate the image of better quality; and the crystallization homogeneity of protective layer 119 can influence the plasma display discharge characteristic, how to form therefore that the preferable protective layer of crystallization homogeneity 119 is real to be the important topic of the technology of plasma display now.
At present be to utilize the deposition method of electron beam evaporation plating to form the plasma display protective layer of substrate before mostly, and this protective layer is made of magnesium oxide usually.Fig. 2 A is the schematic side view of known evaporation coating device 200, and Fig. 2 B then is the schematic top plan view of the evaporation coating device 200 shown in Fig. 2 A.Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, the prebasal plate 110 that at first will be provided with X electrode shown in Figure 1 114 and Y electrode 116 is placed in the chamber 208, again by heating unit (electron beam gun) 202 divergent bundles 204 so that deposition material 206 is heated.At this moment, will be gaseous state by solid state transformation by the deposition material 206 that magnesium oxide constituted, and be decomposed into oxonium ion and magnesium ion.
Because the sedimentation rate of magnesium ion is fast than the sedimentation rate of oxonium ion, therefore oxonium ion and magnesium ion are by contrast, the off-gas pump 212 (shown in Fig. 2 B) that is easier to be connected to chamber 208 both sides detaches chamber 208, and then cause on prebasal plate 110 in the formed magnesia film, the ratio of oxonium ion and magnesium ion can't reach 1: 1.
For addressing the above problem, the present practice is when heating with 204 pairs of deposition materials 206 of electron beam, the reactant gases (not expressing among the figure) that will contain oxygen by gas supply device 205 through the hole 210 of gas duct 209 imports in the chamber 208, detached the oxonium ion of chamber 208 with compensation by off-gas pump 212, and then make oxonium ion and magnesium ion on prebasal plate 110, be combined into magnesia film with 1: 1 ratio.
Yet; after the hole 210 importing chambers 208 of reactant gases by contiguous off-gas pump 212; be easy to before not reacting with the gaseous molecular of deposition material 206; promptly extracted out chamber 208 by off-gas pump 212; make the reactant gas molecules of contiguous off-gas pump 212 be less than the reactant gas molecules at other place, thereby cause the protective layer 119 crystallization homogeneities of formation on prebasal plate 110 not good.
The inhomogeneity method of crystallization of assessing protective layer 119 now is to utilize X-ray monocrystalline diffractometer (x-ray diffractometer) to come rete is carried out lattice diffraction; and as can be known by experimental result; the crystallization homogeneity good rete of healing, the peak value of its diffraction light (peak) intensity are bigger.Need to prove that the reaction gas flow that is imported in coating process can influence the peak strength of diffraction light usually, it closes graphic representation as shown in Figure 3.As shown in Figure 3, the reaction gas flow that is imported in the coating process is directly proportional with the peak strength of the diffraction light of rete.In other words, the reactant gases that is imported in coating process must be controlled in the reasonable scope, to form the even rete of crystallization.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of evaporation coating device, can keep under the situation of definite value, improve the reaction gas flow that imports in a part, so that form the preferable rete of crystallization homogeneity in the reactant gases total flux.
Another object of the present invention provides a kind of plasma display manufacture method of substrate before, can form the preferable protective layer of crystallization homogeneity, and then improve the discharge stability of plasma display.
A further object of the present invention provides a kind of evaporation process, can form the preferable rete of crystallization homogeneity.
The present invention proposes a kind of evaporation coating device, mainly comprises chamber, gas duct, vapor deposition source and off-gas pump.Wherein, gas duct is arranged in the chamber, and has a plurality of holes, and these holes are in order to import reactant gases in this chamber.Vapor deposition source is arranged in the chamber, and off-gas pump is arranged on the both sides at least of chamber, and the reaction gas flow that imported of the part hole of contiguous off-gas pump is greater than the reaction gas flow that hole imported of other parts.
Embodiment according to the present invention is described, and these holes comprise a plurality of first holes and a plurality of second hole.In one embodiment, the quantity of these first holes is greater than the quantity of these second holes, and the size of these first holes less than, equal or greater than the size of these second holes.And in another embodiment, the size of these first holes is greater than the size of second hole, and the quantity of these first holes is less than or equal to the quantity of these second holes.In addition, the shape of these first holes and second hole can be circle, ellipse, Polygons or irregular shape.
Embodiment according to the present invention is described, and vapor deposition source for example comprises deposition material loader and heating unit.Wherein the deposition material loader is in order to the carrying deposition material, and heating unit is then in order to heat this deposition material.In addition, in one embodiment, heating unit for example is electron beam gun (electron gun).
Embodiment according to the present invention is described, and the spacing between these holes is located to increase gradually between among the chamber by contiguous this off-gas pump part.In another embodiment, the size of these holes becomes big by locating between among the chamber gradually towards contiguous this off-gas pump part.
The present invention also proposes a kind of plasma display manufacture method of board structure before, and this method forms many counter electrode earlier on substrate right, then this substrate placed in the chamber again, wherein, comprise deposition material in this chamber, and this chamber is connected to off-gas pump.Afterwards, heat this deposition material, and the reactant gases introduction chamber is indoor, so that the gaseous molecular of deposition material and reactant gases produce reaction and form rete and cover electrode pair on substrate.Wherein, at the reaction gas flow of the reaction gas flow that is close to the off-gas pump part greater than other place.
The present invention proposes a kind of evaporation process, is suitable for forming one deck rete in chamber on substrate, wherein, comprise deposition material in this chamber, and this chamber is connected to off-gas pump.This technology is this deposition material of heating earlier, and is then that the reactant gases introduction chamber is indoor, so that the gaseous molecular of deposition material and reactant gases produce reaction and form this rete on substrate.Wherein, at the reaction gas flow of the reaction gas flow that is close to the off-gas pump part greater than other place.
Embodiment according to the present invention is described, for example is with electron beam heating deposition material in the step of heating deposition material.In addition, in one embodiment, form after the electrode pair and form before the protective layer, comprise that also forming one dielectric layer earlier on substrate covers these electrode pairs.
The present invention can form the preferable rete of crystallization homogeneity under the situation of the whole flow that does not increase reactant gases.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the general plasma display schematic perspective view of substrate before.
Fig. 2 A is the schematic side view of known evaporation coating device.
Fig. 2 B then is the schematic top plan view of the evaporation coating device 200 shown in Fig. 2 A.
Fig. 3 is the graph of relation of the diffraction photopeak value intensity of the gas flow rete that evaporation process formed therewith that imported in the evaporation process.
Fig. 4 is the schematic top plan view of a kind of evaporation coating device of a preferred embodiment of the present invention.
Fig. 5, Fig. 6 A, Fig. 6 B and Fig. 7 are respectively a kind of schematic top plan view of evaporation coating device of the present invention's preferred embodiment.
Fig. 8 A to Fig. 8 B is the manufacturing process diagrammatic cross-section of substrate before the present invention's the plasma display.
The main element description of symbols
100: plasma display
110: prebasal plate
112,122: substrate
113: electrode pair
The 114:X electrode
114a, 116a: transparency electrode
114b, 116b: bus electrode
The 116:Y electrode
118,126: dielectric layer
119: protective layer
120: metacoxa
124: address electrode
127: discharge space
128: barrier
129: fluorescent material layer
200,400: evaporation coating device
202: heating unit
213: the deposition material loader
204: electron beam
205: gas supply device
206: deposition material
208: chamber
209,409: gas duct
210,410: hole
212: off-gas pump
214: vapor deposition source
410a: first hole
410b: second hole
Embodiment
The present invention improves the design of the gas duct of evaporation coating device, to form the preferable rete of crystallinity.Below embodiment in order to explanation the present invention, be not in order to limit the present invention.The ordinary skill of technical field that the present invention belongs to can be done suitable improvement to following embodiment according to the present invention's thought, precisely because must belong in the present invention's the scope.
Fig. 4 is the schematic top plan view of a kind of evaporation coating device of a preferred embodiment of the present invention.And the side-view of the present invention's evaporation coating device can also Fig. 2 A be its synoptic diagram, therefore, draws the side-view of the present invention's evaporation coating device herein no longer separately.
Please be simultaneously with reference to Fig. 2 A and Fig. 4, evaporation coating device 400 mainly comprises chamber 208, gas duct 409, vapor deposition source 214 and off-gas pump 212.Wherein, vapor deposition source 214 is arranged in the chamber 208, and vapor deposition source 214 for example comprises deposition material loader 213 and heating unit 202.Deposition material loader 213 for example is arranged in the chamber 208, and in order to carrying deposition material 206, heating unit 202 is then in order to heating deposition material 206.In the present embodiment, deposition material 206 for example is a magnesium oxide, and heating unit 202 for example is an electron beam gun.In other words, present embodiment for example is to heat deposition material 206 by 202 ejected electron bundles 204 of heating unit, shown in Fig. 2 A.
Particularly, gas duct 409 has a plurality of holes 410, in order to the reactant gases (not expressing among the figure) in the gas supply device 205 is imported in the chamber 208.Wherein, the employed reactant gases of present embodiment for example is an oxygen.In the present embodiment, evaporation coating device 400 for example includes at least two off-gas pumps 212, and for example is connected to the both sides at least of chamber 208 respectively, and it is in order to keep the vacuum state of chamber 208.And hole 410 for example comprises the first hole 410a and the second hole 410b.Wherein, the first hole 410a is positioned at contiguous off-gas pump 212 parts.In the present embodiment, the quantity of the first hole 410a for example is more than the quantity of the second hole 410b, therefore can import more reactant gases at contiguous off-gas pump 212 places, before the gaseous molecular with deposition material 206 produces reaction, promptly be detached the gas volume of chamber 208 with compensation by off-gas pump 212.Certainly, the size of the first hole 410a can be less than, equal or greater than the size of the second hole 410b, present embodiment does not limit the size of the first hole 410a and the second hole 410b.
In addition, in another embodiment, can also be with the size of being designed and sized to of the first hole 410a greater than the second hole 410b, as shown in Figure 5, to reach the effect that imports more reactant gases at contiguous off-gas pump 212 places.Same, in the present embodiment, the quantity of the first hole 410a can be less than, equal or greater than the quantity of the second hole 410b, present embodiment does not limit the quantity of the first hole 410a and the second hole 410b.
In addition, the spacing between the present invention's the hole 410 can also be to dwindle gradually or increase.For instance, the spacing between the hole 410 for example is to be dwindled gradually towards contiguous off-gas pump 212 parts by place in the middle of the chamber 208, as shown in Figure 6A.In addition, the present invention also can dwindle or add the size (shown in Fig. 6 B) of macroscopic void 410 in progressive mode.Moreover, the shape of hole 410 for example is the circle shown in the foregoing description, rectangle (as shown in Figure 7), ellipse, irregular shape or other Polygons or the like, the present invention does not limit the shape of hole 410, and the ordinary skill of technical field that the present invention belongs to can be voluntarily according to actual required deciding.
To be the evaporation process that example illustrates the present invention below with the technology of substrate before the plasma display.
Fig. 8 A to Fig. 8 B is the manufacturing process diagrammatic cross-section of board structure before the present invention's the plasma display.And before the present invention's the plasma display stereographic map of substrate also can Fig. 1 as synoptic diagram, therefore draw no longer separately herein.
Please refer to Fig. 8 A, at first on substrate 112, form many counter electrode to 113, and each counter electrode for example is made up of X electrode 114 and Y electrode 116 to 113.Then please refer to Fig. 8 B, on substrate 112, form protective layer 119.It should be noted that present embodiment for example is before forming protective layer, on electrode pair 113 and substrate 112, form dielectric layer 118 earlier, on dielectric layer 118, form protective layer 119 afterwards again.Wherein, the formation method of protective layer 119 for example is will to place in the chamber with the substrate 112 that is formed with electrode pair 113 earlier, and this chamber for example is a vacuum chamber.Then again the deposition material in the chamber is heated, and import reactant gases,, and then on substrate 112, form protective layer 119 so that the gaseous molecular of deposition material and reactant gases produce reaction.In this evaporation process, the temperature of substrate 112 for example is 200 degree Celsius, and the sedimentation rate of protective layer 119 for example is 3.8 nm/sec.
In evaporate process, chamber can be connected to off-gas pump (as shown in Figure 4) usually, so that keep the vacuum state of chamber.What be worth paying special attention to is that in this evaporate process, therefore the gas flow that the reaction gas flow that the place of contiguous off-gas pump imports imports greater than other place can compensate at the molecule with deposition material and produce the gas volume that is promptly detached by off-gas pump before the reaction.In addition, employed deposition material for example is a magnesium oxide in the above-mentioned evaporation process, and the reactant gases that imports for example is an oxygen.In other words, the protective layer 119 of present embodiment is made of magnesium oxide.
As shown in the above description, the present invention's evaporation coating device is by changing the design of hole, so that the gas flow of contiguous off-gas pump part is greater than the gas flow at other place, the gaseous molecular and the reactant gases that can compensate deposition material produce the gas volume that is promptly detached by off-gas pump before the reaction, so its whole crystallinity difference of formed rete diminishes in evaporation process, and homogeneity increases.And by experimental result as can be known, the present invention can increase about 15～20% with the crystallization homogeneity of rete.As shown in the above description, use the present invention's evaporation coating device under the situation of the whole flow that does not increase reactant gases, to form the preferable rete of crystallization homogeneity, so the present invention can improve the quality of product under the prerequisite that does not increase the technology cost.And, utilize the present invention's evaporation coating device to form the plasma display protective layer of board structure before, can make protective layer have preferable crystallization homogeneity, and then improve the discharge stability of plasma display, to obtain preferable picture quality.
In addition, the present invention's evaporation process is by the flow in the control reactant gases importing chamber, just make the gas flow of the gas flow of contiguous off-gas pump part greater than other place, produce the gas volume that is promptly detached before the reaction with compensation at molecule, and then form the preferable rete of crystallization homogeneity by off-gas pump with deposition material.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; the ordinary skill of any technical field that the present invention belongs to; in thought that does not break away from the present invention and scope; when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking claims person of defining.
Claims (21)
1. evaporation coating device is characterized in that comprising at least:
Chamber;
Gas duct, this gas duct are arranged in this chamber and have a plurality of holes,
It is in order to be directed into reactant gases in this chamber;
Vapor deposition source is arranged in this chamber; And
Off-gas pump is arranged at the both sides at least of this chamber, and wherein the total flux of this reactant gases of being imported of these holes of part of contiguous this off-gas pump is greater than the total flux of this reactant gases that these holes imported of other parts.
2. the evaporation coating device according to claim 1 is characterized in that between these holes apart from being located to increase gradually between among this chamber by contiguous this off-gas pump part.
3. the evaporation coating device according to claim 1, the size that it is characterized in that these holes becomes big by locating between among this chamber gradually towards contiguous this off-gas pump part.
4. the evaporation coating device according to claim 1 is characterized in that these holes comprise a plurality of first holes and a plurality of second hole at least, and these first holes in these holes are than contiguous this off-gas pump of these second holes in these holes.
5. the evaporation coating device according to claim 4, the quantity of these first holes that it is characterized in that these holes is greater than the quantity of these second holes of these holes.
6. the evaporation coating device according to claim 5 is characterized in that the size of these first holes of these holes equals the size of these second holes of these holes.
7. the evaporation coating device according to claim 5, the size of these first holes that it is characterized in that these holes is less than the size of these second holes of these holes.
8. the evaporation coating device according to claim 5, the size of these first holes that it is characterized in that these holes is greater than the size of these second holes of these holes.
9. the evaporation coating device according to claim 4, the size of these first holes that it is characterized in that these holes is greater than the size of these second holes of these holes.
10. the evaporation coating device according to claim 9 is characterized in that the quantity of these first holes of these holes equals the quantity of these second holes of these holes.
11. the evaporation coating device according to claim 9, the quantity of these first holes that it is characterized in that these holes is less than the quantity of these second holes of these holes.
12. the evaporation coating device according to claim 1, the shape that it is characterized in that these holes comprises a kind of shape in circle, ellipse, Polygons and the irregular shape at least.
13. the evaporation coating device according to claim 1 is characterized in that this vapor deposition source comprises deposition material loader and heating unit.
14. the evaporation coating device according to claim 13 is characterized in that this heating unit comprises electron beam gun.
15. the manufacture method of substrate before the plasma display is characterized in that comprising:
Form a plurality of electrodes on the substrate; And
Place this substrate in chamber, comprise deposition material in this chamber, and this chamber is connected to off-gas pump;
Heat this deposition material; And
Import reactant gases in this chamber; so that the gaseous molecular of this deposition material and this reactant gases produce reaction to form protective layer and cover these electrode pairs on this substrate; wherein near this flow rate of reactive gas this off-gas pump is greater than this flow rate of reactive gas at other place, to improve the crystallization homogeneity of this protective layer.
16., it is characterized in that in the step of this deposition material of heating, comprising with electron beam and heating this deposition material according to the manufacture method of substrate before the described plasma display of claim 15.
17. manufacture method according to substrate before the described plasma display of claim 15; it is characterized in that on this substrate, forming after these electrode pairs and before forming this protective layer on this substrate; also be included on this substrate and form dielectric layer, and cover these electrode pairs.
18. according to the manufacture method of substrate before the described plasma display of claim 15, it is characterized in that forming on this substrate in the step of this protective layer, the temperature of this substrate is 200 degree Celsius.
19. according to the manufacture method of substrate before the described plasma display of claim 15, the sedimentation rate that it is characterized in that forming this protective layer is 3.8 nm/sec.
20. an evaporation process it is characterized in that being suitable for forming a rete in chamber on substrate, and have deposition material in this chamber, and at least one side of this chamber is connected to off-gas pump, this evaporation process comprises:
Heat this deposition material; And
Import reactant gases in this chamber; so that the molecule of this deposition material and this reactant gases produce reaction and form this rete on this substrates; wherein at the flow of this reactant gases at contiguous this off-gas pump place flow, to improve the crystallization homogeneity of this protective layer greater than this reactant gases at other place.
21. the evaporation process according to claim 20 is characterized in that comprising with electron beam and heating this deposition material in the step of this deposition material of heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100840320A CN100412226C (en) | 2004-10-18 | 2004-10-18 | Method for manufacturing front substrate of plasma display, vapor deposition process and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100840320A CN100412226C (en) | 2004-10-18 | 2004-10-18 | Method for manufacturing front substrate of plasma display, vapor deposition process and apparatus therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1763238A CN1763238A (en) | 2006-04-26 |
| CN100412226C true CN100412226C (en) | 2008-08-20 |
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| CNB2004100840320A Expired - Fee Related CN100412226C (en) | 2004-10-18 | 2004-10-18 | Method for manufacturing front substrate of plasma display, vapor deposition process and apparatus therefor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0452273A (en) * | 1990-06-18 | 1992-02-20 | Mitsubishi Electric Corp | Thin film forming device |
| EP0989200A1 (en) * | 1998-09-24 | 2000-03-29 | Leybold Systems GmbH | Evaporation device |
| GB2342929A (en) * | 1998-10-20 | 2000-04-26 | Leybold Systems Gmbh | Vapourisation device |
| CN1327081A (en) * | 2001-05-29 | 2001-12-19 | 深圳市坦达尼真空表面技术有限公司 | Vacuum evaporation coating method and equipment for organic foamed material |
| CN1504590A (en) * | 2002-11-29 | 2004-06-16 | 铼宝科技股份有限公司 | Device and method for evaporation |
| JP4052273B2 (en) * | 2004-03-30 | 2008-02-27 | セイコーエプソン株式会社 | Light source device and projector |
-
2004
- 2004-10-18 CN CNB2004100840320A patent/CN100412226C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0452273A (en) * | 1990-06-18 | 1992-02-20 | Mitsubishi Electric Corp | Thin film forming device |
| EP0989200A1 (en) * | 1998-09-24 | 2000-03-29 | Leybold Systems GmbH | Evaporation device |
| GB2342929A (en) * | 1998-10-20 | 2000-04-26 | Leybold Systems Gmbh | Vapourisation device |
| CN1327081A (en) * | 2001-05-29 | 2001-12-19 | 深圳市坦达尼真空表面技术有限公司 | Vacuum evaporation coating method and equipment for organic foamed material |
| CN1504590A (en) * | 2002-11-29 | 2004-06-16 | 铼宝科技股份有限公司 | Device and method for evaporation |
| JP4052273B2 (en) * | 2004-03-30 | 2008-02-27 | セイコーエプソン株式会社 | Light source device and projector |
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| Publication number | Publication date |
|---|---|
| CN1763238A (en) | 2006-04-26 |
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Granted publication date: 20080820 Termination date: 20121018 |