CN100411117C - Improvement of atomic layer deposition and apparatus thereof - Google Patents
Improvement of atomic layer deposition and apparatus thereof Download PDFInfo
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- CN100411117C CN100411117C CNB2004100770667A CN200410077066A CN100411117C CN 100411117 C CN100411117 C CN 100411117C CN B2004100770667 A CNB2004100770667 A CN B2004100770667A CN 200410077066 A CN200410077066 A CN 200410077066A CN 100411117 C CN100411117 C CN 100411117C
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Abstract
The present invention relates to a device and a method for improving the deposition process of an atom layer. The method comprises the following steps: firstly, forming a shielding cover in a reaction chamber to divide the reaction chamber into a first subsidiary reaction chamber and a second subsidiary reaction chamber; secondly, respectively leading in first precursory gas and second precursory gas into the first subsidiary reaction chamber and the second subsidiary reaction chamber, and sending a wafer to the first subsidiary reaction chamber; thirdly, rotating a bearing to cause the wafer to move to the second subsidiary reaction chamber to react with the second precursory gas after the first precursory gas absorbed by the surface of the wafer is in a saturation state, wherein the shielding cover can be used for removing the first precursory gas and the second precursory gas which are not reacted on the wafer; finally, sending another wafer to the first subsidiary reaction chamber to simultaneously process a plurality of wafers to improve the production efficiency of the process.
Description
Technical field
The present invention relates to a kind of method and device that improves semiconductor technology, particularly relate to a kind of method and device that improves atom layer deposition process.
Background technology
Because semi-conductor industry fast development in recent years, consequently every technology and Material Used are all significantly developed, to continue to promote the integration of element in the integrated circuit and the usefulness of operation.Along with component size microminiaturization day by day, the aspect ratio (aspect ratio) of its contact hole (contact) and interlayer hole (via) also significantly improves, thereby has increased the degree of difficulty of depositing operation operation.Be how to form suitable shape (conformal) metal level in the contact hole and the interlayer hole of high aspect ratio, to have become one of problem important in time micron technological development.
The method that forms at present along the shape metal level generally is to adopt ald (atomic layerdeposition; ALD) technology, with reference to Figure 1A to 1C, it is the wafer cross schematic diagram that carries out the atom layer deposition process flow process.Shown in Figure 1A, import earlier forerunner's reactant 120 in a reative cell, treat that this forerunner's reactant 120 of wafer 100 surface adsorption reaches saturation condition after, take out unnecessary forerunner's reactant 120 again.Then shown in Figure 1B and 1C, import another forerunner's reactant 140, and make it with adsorbed forerunner's reactant 120 reactions in wafer 100 surfaces and form a product 160, and then take out unreacted forerunner's reactant 140 and accessory substance in wafer surface.Because atom layer deposition process for controlling product 160 monolayer depositions in wafer 100 surfaces, so be formed at contact hole or interlayer hole with can making product 160 suitable shapes.Yet, come the speed of depositing metal layers very slow with atom layer deposition process, add that the metal layer thickness of each gained is very thin, generally be about 0.5 dust to 3 dust, if so to obtain the metal level that thickness is tens dusts, then necessary heavy many ten steps, and have a strong impact on production efficiency.
Summary of the invention
Therefore purpose of the present invention is exactly that a kind of method and device that improves atom layer deposition process is being provided, and in order to depositing a metal level along shape, and improves the production efficiency of technology.
In view of above-mentioned purpose, one aspect of the present invention proposes a kind of device that improves atom layer deposition process, it has a radome, by being fed in the reative cell, inert gas forms, and this radome is separated into the gas injection dish that a plurality of secondary responses chamber, a plurality of correspondence are arranged at top, secondary response chamber with a reative cell, in order to import the required precursor gas of different step in the secondary response chamber, an and swivel bearing.Wherein, swivel bearing more links to each other with a plurality of crystal cups, can drive crystal cup by rotation and move to another secondary response chamber by the primary first-order equation chamber.Be can send into simultaneously in this device with a plurality of wafers to carry out depositing operation, and finish atom layer deposition process, and utilize number of revolutions to reach desired thickness by spinning movement, thus can effectively shorten the operating time of depositing operation, and then enhance productivity.
Another aspect of the present invention then proposes a kind of method of improving atom layer deposition process, and its radome that utilizes inert gas earlier and constituted is separated into a plurality of secondary responses chamber with a reative cell, and imports the required precursor gas of different step respectively in the secondary response chamber.Then send into a wafer to the primary first-order equation chamber with the gas absorption of carrying out depositing operation in the step of wafer surface, and then this wafer is moved to another secondary response chamber carry out main deposition step, last and send into another wafer to the secondary response chamber of gas absorption step.Gas absorption, deposit film be in a plurality of wafers so simultaneously, and effectively improve the production efficiency of technology.On the other hand, because the reactions steps of different phase is for to carry out in different secondary response chambers, thus do not need to carry out again the replacing step of precursor gas, thereby significantly reduce the operating time and the step of technology, and can effectively increase production efficiency.
Description of drawings
For above-mentioned and other purpose of the present invention, feature and advantage can be become apparent, conjunction with figs. is illustrated as follows:
Figure 1A, 1B and 1C are the flow process profile that illustrates the wafer that carries out atom layer deposition process;
Fig. 2 is a kind of device schematic diagram that improves atom layer deposition process that illustrates according to one embodiment of the present invention; And
Fig. 3 is a kind of method flow diagram that improves atom layer deposition process that illustrates according to one embodiment of the present invention.
The simple symbol explanation
100 wafers, 120,140 forerunner's reactants
160 products, 200 reative cells
First set reaction chambers 208 204 are reative cell for the second time
210 radomes, 234 first gas injection dishes
254 first precursor gas are coiled in 238 second gas injections
258 second precursor gas, 264 first wafers
268 second wafers, 274 first crystal cups
278 second crystal cups, 290 bearings
300,310,330,350,370,390 steps
Embodiment
For the production efficiency that improves atom layer deposition process and the effective rate of utilization of technology precursor gas, the present invention proposes a kind of device and method that improves depositing operation, its preferred embodiment, and details are as follows with reference to the accompanying drawings.
With reference to Fig. 2, it is a kind of device schematic diagram that improves atom layer deposition process according to one embodiment of the present invention.As shown in Figure 2, a radome 210 is arranged in the reative cell 200, and reative cell 200 is separated into a first set reaction chamber 204 and a reative cell 208 for the second time.Radome 210 can be made of an inert gas, for example argon gas (Ar), helium (He) or nitrogen (N
2).In addition, first set reaction chamber 204 is provided with one first gas injection dish (injectplate) 234 and one second gas injection dish 238 respectively with the top of reative cell 208 second time, in order to importing one first precursor gas 254 and one second precursor gas 258, and in its below respectively correspondence one first crystal cup (susceptor) 274 and one second crystal cup 278 are set.So can make reative cell can handle a plurality of wafers simultaneously, and can in different secondary response chambers, carry out different reactions steps.In this preferred embodiment, first set reaction chamber 204 is the usefulness as the adsorption step of first precursor gas 254 of carrying out atom layer deposition process, and 208 of reative cells are used for carrying out the major sedimentary step of technology for the second time.So to form tungsten (W) film is example, first precursor gas 254 can be a silane gas (SiH
4), a borane gases (B
2H
6) or its composition, 258 of second precursor gas can be a tungsten hexafluoride (WF
6).Because precursor gas adsorption step, deposition step are for to carry out in different secondary response chambers, and isolate and avoid first precursor gas 254 and second precursor gas 258 to mix mutually by radome 210 and contact, therefore do not need to extract out in the conventional atomic layer depositing operation step of unnecessary precursor gas, so can effectively reduce the required step of atom layer deposition process, thereby can increase production efficiency.
In addition, above-mentioned device also has a swivel bearing 290, it also is connected with second crystal cup 278 with first crystal cup 274, so after these swivel bearing 290 1 suitable angles of rotation, first crystal cup 274 is moved to for the second time in the reative cell 208 by first set reaction chamber 204, and make second crystal cup 278 by the second time reative cell 208 move to first set reaction chamber 204.When one second wafer 268 is sent into first set reaction chamber 204 and finished the first predecessor adsorption step, after promptly the first surperficial adsorbed precursor gas 254 of second wafer 268 reaches saturation condition, then rotate this bearing 290 make second wafer 268 move to for the second time reative cell 208 carries out deposition step, and send into simultaneously one first wafer 264 in first set reaction chamber 204 to carry out first precursor gas, 254 adsorption steps.Therefore, can make by control swivel bearing 290 that a plurality of wafers adsorb continuously and in turn, deposition step, up to obtaining required metal layer thickness.On the other hand, the above-mentioned radome that inert gas constituted 210 is avoided first precursor gas 254 and 258 mutual mixing of second precursor gas, more be can be used to remove unreacted precursor gas on the wafer when mobile wafer except being used for.For example, when second wafer 268 moves to for the second time reative cell 208 by first set reaction chamber 204, unreacted first precursor gas 254 in removable second wafer, 268 surfaces, and when the second time, reative cell 208 moved to first set reaction chamber 204, then removable not with second precursor gas 258 of first precursor gas, 254 reactions.So need not carry out extra remove step and can reducing technology and carry out the required time, and then reach the purpose of enhancing productivity.
Moreover, though above-mentioned preferred embodiment is divided into a first set reaction chamber and a reative cell for the second time with a reative cell, right its also can be provided with a plurality of shieldings according to the size of reative cell and arts demand and cover in the reative cell, with reative cell is divided into a plurality of first set reactions chamber and a plurality of second time reative cell.By swivel bearing also can make a plurality of wafers in regular turn in the first set reaction chamber and adsorb in the reative cell for the second time, deposition step, so also can effectively improve the production efficiency of technology, the invention is not restricted to this.
Fig. 3 is a kind of method flow diagram that improves atom layer deposition process according to one embodiment of the present invention.With reference to Fig. 3, at first carrying out step 300 feeds an inert gas and covers in the reative cell to form at least one shielding, and by this radome with reative cell be separated at least one first set reaction chamber and at least one second time reative cell, wherein inert gas can be selected argon gas, nitrogen or helium.Then carry out step 310 and step 330, import first precursor gas and second precursor gas reative cell in the first set reaction chamber and for the second time respectively, to carry out atom layer deposition process.In step 350, send into a wafer to first set reaction chamber then and carry out the first precursor gas step, after wafer surface is adsorbed the first saturated precursor gas, in step 370, rotate a bearing and this wafer is moved to reative cell for the second time, so that first precursor gas of absorption and the reaction of second precursor gas generate a thin layer.In addition, above-mentioned inert gas can be used to remove unreacted first precursor gas and second precursor gas on the wafer surface.Last and send into another wafer to the first set reaction chamber, increase technological operation speed to handle a plurality of wafers simultaneously.In addition, but also repeating step 350 and step 370 increase the deposit thickness of thin layer.
By the invention described above preferred embodiment as can be known, use method and the device that improves atom layer deposition process of the present invention, can carry out the absorption of first precursor gas, deposit film simultaneously, and effectively improve the production efficiency of technology in a plurality of wafers.In addition, owing in different secondary response chambers, carry out gas absorption and deposition step respectively, therefore need not repeat to change the required precursor gas of different step, so can effectively reduce the replacing step of precursor gas.Moreover, when between the secondary response chamber, moving around wafer, can remove unreacted precursor gas on the wafer by the formed radome of inert gas, thereby can significantly reduce the operating time of atom layer deposition process, to increase production efficiency.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (21)
1. method of improving atom layer deposition process comprises at least:
In a reative cell, feed inert gas and form at least one radome, wherein this radome with this reative cell be separated at least one first set reaction chamber and at least one second time reative cell;
One first precursor gas is directed into this first set reaction chamber;
One second precursor gas is directed into this of reative cell second time;
One wafer is fed through this first set reaction chamber; And
This wafer is moved to this of reative cell second time.
2. the method for improving atom layer deposition process as claimed in claim 1 also comprises:
Another wafer is fed through this first set reaction chamber.
3. the method for improving atom layer deposition process as claimed in claim 1 also comprises:
Repeat to move this wafer, this wafer cycles is displaced between this first set reaction chamber and this reative cell, to reach the required deposition thickness of an atomic layer second time.
4. the method for improving atom layer deposition process as claimed in claim 1, at least one radome of wherein above-mentioned formation is for feeding an inert gas to this reative cell.
5. the method for improving atom layer deposition process as claimed in claim 4, wherein above-mentioned inert gas is selected one by the group that argon gas, nitrogen and helium constituted.
6. the method for improving atom layer deposition process as claimed in claim 4, wherein above-mentioned shielding cover in and move this wafer to this second time during reative cell, also are used for removing this first precursor gas of not adsorbing on this wafer.
7. the method for improving atom layer deposition process as claimed in claim 1, wherein above-mentioned move this wafer to this second time reative cell make the crystal cup that carries this wafer move to this of reative cell by this first set reaction chamber by rotation one bearing second time.
8. the method for improving atom layer deposition process as claimed in claim 1, the first wherein above-mentioned precursor gas are a silane gas, a borane gases or its composition.
9. the method for improving atom layer deposition process as claimed in claim 1, the second wherein above-mentioned precursor gas is a tungsten hexafluoride.
10. method that increases the production efficiency of atom layer deposition process comprises at least:
One inert gas is fed to a reative cell, forming at least one radome, and this radome with this reative cell be separated at least one first set reaction chamber and at least one second time reative cell;
One first precursor gas is directed into this first set reaction chamber;
One second precursor gas is directed into this of reative cell second time;
One wafer is fed through this first set reaction chamber; And
Rotate a bearing and make this wafer move to this of reative cell second time by this first set reaction chamber.
11. the method for the production efficiency of increase atom layer deposition process as claimed in claim 10 also comprises:
Another wafer is fed through this first set reaction chamber.
12. the method for the production efficiency of increase atom layer deposition process as claimed in claim 10 also comprises:
Repeat to move this wafer, this wafer cycles is displaced between this first set reaction chamber and this reative cell, to reach the required deposition thickness of an atomic layer second time.
13. the method for the production efficiency of increase atom layer deposition process as claimed in claim 10, wherein above-mentioned inert gas is selected one by the group that argon gas, nitrogen and helium constituted.
14. the method for the production efficiency of increase atom layer deposition process as claimed in claim 10, wherein above-mentioned inert gas also are used for removing unreacted this first precursor gas and this second precursor gas on this wafer.
15. the method for the production efficiency of increase atom layer deposition process as claimed in claim 10, the first wherein above-mentioned precursor gas are a silane gas, a borane gases or its composition.
16. the method for the production efficiency of increase atom layer deposition process as claimed in claim 10, the second wherein above-mentioned precursor gas is a tungsten hexafluoride.
17. a device that improves atom layer deposition process comprises at least:
At least one radome forms to a reative cell by an inert gas is fed, in order to this reative cell is separated at least one first set reaction chamber and at least one second time reative cell;
At least one first gas injection dish is arranged at the top of this first set reaction chamber, in order to import one first precursor gas;
At least one second gas injection dish is arranged at the top of this of reative cell, in order to import one second precursor gas second time; And
One swivel bearing, be connected at least one first crystal cup and at least one second crystal cup, and this first crystal cup and this second crystal cup correspond respectively to the below of this first gas injection dish and this second gas injection dish, wherein, when a wafer is positioned on this first crystal cup and after importing this first precursor gas a period of time, promptly rotate this swivel bearing so that this wafer moves to this of reative cell by this first set reaction chamber second time.
18. the device that improves atom layer deposition process as claimed in claim 17, wherein above-mentioned radome is made of an inert gas.
19. the device that improves atom layer deposition process as claimed in claim 18, wherein above-mentioned inert gas is selected one by the group that argon gas, nitrogen and helium constituted.
20. the device that improves atom layer deposition process as claimed in claim 17, the first wherein above-mentioned precursor gas are silane gas, borane gases or its composition.
21. the device that improves atom layer deposition process as claimed in claim 17, the second wherein above-mentioned precursor gas is a tungsten hexafluoride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100770667A CN100411117C (en) | 2004-09-10 | 2004-09-10 | Improvement of atomic layer deposition and apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100770667A CN100411117C (en) | 2004-09-10 | 2004-09-10 | Improvement of atomic layer deposition and apparatus thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1747139A CN1747139A (en) | 2006-03-15 |
| CN100411117C true CN100411117C (en) | 2008-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100770667A Active CN100411117C (en) | 2004-09-10 | 2004-09-10 | Improvement of atomic layer deposition and apparatus thereof |
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| CN (1) | CN100411117C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074602A (en) * | 2012-01-21 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Reaction chamber of chemical vapor deposition apparatus |
| CN104616956B (en) * | 2013-11-05 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching apparatus and plasma etching method |
| CN106048560A (en) * | 2016-06-24 | 2016-10-26 | 浙江晶科能源有限公司 | ALD coating method and ALD coating device for silicon chip |
Citations (6)
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|---|---|---|---|---|
| JPH03111457A (en) * | 1989-09-26 | 1991-05-13 | Taihei Kagaku Sangyo Kk | Zinc calcium phosphite, its preparation, and corrosionproof coating material containing it |
| US5281274A (en) * | 1990-06-22 | 1994-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors |
| US5338362A (en) * | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
| US20010007244A1 (en) * | 2000-01-06 | 2001-07-12 | Kimihiro Matsuse | Film forming apparatus and film forming method |
| CN1458668A (en) * | 2002-05-18 | 2003-11-26 | 海力士半导体有限公司 | Batched atom layer depositing device |
| US20040035362A1 (en) * | 2000-08-09 | 2004-02-26 | Chul-Ju Hwang | Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors |
-
2004
- 2004-09-10 CN CNB2004100770667A patent/CN100411117C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03111457A (en) * | 1989-09-26 | 1991-05-13 | Taihei Kagaku Sangyo Kk | Zinc calcium phosphite, its preparation, and corrosionproof coating material containing it |
| US5281274A (en) * | 1990-06-22 | 1994-01-25 | The United States Of America As Represented By The Secretary Of The Navy | Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors |
| US5338362A (en) * | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
| US20010007244A1 (en) * | 2000-01-06 | 2001-07-12 | Kimihiro Matsuse | Film forming apparatus and film forming method |
| US20040035362A1 (en) * | 2000-08-09 | 2004-02-26 | Chul-Ju Hwang | Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors |
| CN1458668A (en) * | 2002-05-18 | 2003-11-26 | 海力士半导体有限公司 | Batched atom layer depositing device |
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| CN1747139A (en) | 2006-03-15 |
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