CN100411063C - SnO2/Sn coaxial nano cable and preparation method and application thereof - Google Patents
SnO2/Sn coaxial nano cable and preparation method and application thereof Download PDFInfo
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- CN100411063C CN100411063C CNB2006100355894A CN200610035589A CN100411063C CN 100411063 C CN100411063 C CN 100411063C CN B2006100355894 A CNB2006100355894 A CN B2006100355894A CN 200610035589 A CN200610035589 A CN 200610035589A CN 100411063 C CN100411063 C CN 100411063C
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 46
- 239000003708 ampul Substances 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000002070 nanowire Substances 0.000 claims description 6
- 229910001254 electrum Inorganic materials 0.000 claims description 5
- XXOYNJXVWVNOOJ-UHFFFAOYSA-N fenuron Chemical compound CN(C)C(=O)NC1=CC=CC=C1 XXOYNJXVWVNOOJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 239000003814 drug Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052756 noble gas Inorganic materials 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- SNWNLRQYQRTOBP-UHFFFAOYSA-N [O--].[S--].[Zn++].[Zn++] Chemical compound [O--].[S--].[Zn++].[Zn++] SNWNLRQYQRTOBP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000035764 nutrition Effects 0.000 description 1
- 235000016709 nutrition Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a SnO2/Sn coaxial nanometer cable and a preparation method thereof and an application thereof. The inner core of the cable is Sn nanometer lines, the housing of the cable is SnO2 nanometer pipes, the inner core and the housing are in coaxial structure, and the diameter of the cable is from 20 to 30 nanometers, the length is from 500 to 900 micrometres. The preparation method comprises: reaction source is placed in a high temperature resistant inner tube, and a single crystal wafer is arranged nearby the reaction source, and the single crystal wafer is arranged on high temperature resistant material; the high temperature resistant inner tube is placed in a high temperature resistant external tube, then the high temperature resistant external tube is placed in a heating furnace; vacuum pumping is performed, and noble gas is led into the heating furnace, the furnace temperature is risen to 550 to 750 DEG C, and cooling is performed after thermal insulation, namely that the SnO2/Sn coaxial nanometer cable is prepared. The present invention can be used in biological medicine fields, micro-component preparing fields, circuit connecting fields, micro-component communication fields, etc. The present invention has the advantages of simple preparing technology, low cost and capability of realizing mass production.
Description
Technical field
The present invention relates to the nano-cable technology, particularly a kind of tin ash/tin coaxial nano cable and its production and application.
Background technology
Since human first transistor came out, its size was dwindled twice in per 18 months, and by now " running quickly four " only has nanometer more than 100; Expect transistorized size in 2010 and will have only tens nanometers, with what connect between the element of so this super-high density integrated circuit? this is a difficult problem that World Science circle faces jointly.Present stage, technology was difficult to break through the ultra micro limit, and the various countries scientist places hope on the application of nanometer technology.At present, scientist claims and has the ability to produce the blood vessel also thin nano-cable finer than the mankind.This just means that scientist can make nano-cable walk arbitrarily in human vas, reach the place of any appointment and normal blood in can line artery, oxygen are mobile with nutrition.Scientist also observes, and the transmission of electronics is different from common conductor in the nano-cable, and its transmission speed is fast, and energy consumption is littler.Its birth also may lay the foundation for the fibre-optic generation of the next generation.
Nano-cable is meant that core is the nano wire of semiconductor or conductor, outer coated heterogeneous nanometer housing (conductor or non-conductor), and outside housing and core are coaxial, therefore are called coaxial nano cable.Because the property that had of this class material occupies an important position in the nano structure device in future, particularly be connected with circuit, aspect such as little communication device manufacturing can play very important effect in biological medicine, micro element preparation.At present, the domestic polyvinyl alcohol/silver-colored nano-cable of having prepared, zinc sulphide-zinc oxide nano cable etc., but synthetic method often needs exacting terms such as high temperature, laser, solution is synthetic.
Summary of the invention
In order to solve the weak point that above-mentioned prior art exists, primary and foremost purpose of the present invention is to provide a kind of preparation technology simple, the tin ash that range of application is wider/tin coaxial nano cable.
Another object of the present invention is to provide a kind of preparation method who utilizes thermal evaporation to synthesize above-mentioned tin ash/tin coaxial nano cable, have simple to operate, with low cost, consuming time few, the advantage of be fit to producing in enormous quantities.
A further object of the present invention is to provide the application of above-mentioned tin ash/tin coaxial nano cable.
Purpose of the present invention is achieved through the following technical solutions: a kind of tin ash/tin coaxial nano cable, its inner core is that diameter is the stannum nanowire of 10～15nm, shell is the tin dioxide nanometer tube of the thick 5～7.5nm of being, inner core and shell are coaxial configuration, common formation tin ash/tin coaxial nano cable, inner core and shell are closely linked, and do not have the space between the two; The diameter of whole tin ash/tin coaxial nano cable is 20～30nm, and length is 500～900 microns.
The method for preparing above-mentioned tin ash/tin coaxial nano cable comprises the steps: to put into reaction source in the pipe at one in high temperature resistant, and in interior pipe, place monocrystalline silicon piece as substrate from the place of reaction source 0.5～2.0cm, monocrystalline silicon piece is placed on the exotic material, then pipe in high temperature resistant is put into the inside of high temperature resistant outer tube, high temperature resistant outer tube is put into heating furnace, heating furnace vacuumized 15～60 minutes then, feed inert gas 25～60sccm (per minute standard milliliter) again, make in the stove vacuum degree reach 100～500 Torr (1Torr=1/760 standard atmospheric pressure=133Pa), furnace temperature rises to 550～750 ℃, and be incubated 550～750 ℃ and continue after 2～4 hours, stop heating, make furnace temperature be cooled to room temperature, promptly make tin ash/tin coaxial nano cable.
In order to realize the present invention better, described reaction source is that purity is 99.99% stannous oxide powder; The internal diameter of described high temperature resistant interior pipe is 1～3cm, and the internal diameter of high temperature resistant outer tube is 5～10cm; Described exotic material is a potsherd, and it is electrum about 10～50 nanometers that described monocrystalline silicon sheet surface has sprayed thick; Described monocrystalline silicon piece area is (2 * 2)～(6 * 6) mm
2Described high temperature resistant interior pipe and high temperature resistant outer tube all can be quartz ampoule.The thermocouple position of described heating furnace and the residing position of reaction source are on a vertical straight line, and described inert gas can be argon gas, helium, neon, krypton gas or xenon etc.
Can be widely used in by the tin ash/tin coaxial nano cable of method for preparing in the fields such as biological medicine, micro element preparation are connected with circuit, micro element communication.
The present invention compared with prior art has following advantage and beneficial effect: the present invention utilizes thermal evaporation to synthesize tin ash/tin coaxial nano cable first, and operation is simple and reliable for this method, with low cost, consuming time few.The diameter of the tin ash that the present invention synthesizes/tin coaxial nano cable is about 20～30 nanometers, and length reaches 500～900 microns, is enough to competent many circuit in the micro element preparation field and connects or the communication role.With the domestic polyvinyl alcohol of having prepared/silver-colored nano-cable (300 nanometer thickness), zinc sulphide-zinc oxide nano cable cables such as (460 nanometer thickness) is compared, and the yardstick of cable of the present invention is littler, and applicability is better; And synthesis technique is simple, does not need exacting terms such as high temperature, laser, solution is synthetic, more helps integrated production in enormous quantities.
Description of drawings
Fig. 1 prepares the installation drawing of tin ash/tin coaxial nano cable with thermal evaporation for the present invention.
Fig. 2 is the electric border of emission, the field photo of tin ash of the present invention/tin coaxial nano cable.
Fig. 3 is the X-ray diffraction analysis collection of illustrative plates of tin ash of the present invention/tin coaxial nano cable.
Fig. 4 is tin ash of the present invention/tin coaxial nano cable Raman collection of illustrative plates at normal temperatures.
Fig. 5 (a) is the transmission electron microscope photo of cable of the present invention, and Fig. 5 (b) is the high-resolution photo of inner core and shell joint; Fig. 5 (c) is the electronic diffraction photo of shell; Fig. 5 (d) is the electronic diffraction photo of inner core.
Embodiment
The present invention is described in further detail below in conjunction with embodiment and accompanying drawing, but embodiments of the present invention are not limited thereto.
Embodiment 1
(wherein 4 is heater block) as shown in Figure 1, in being the little quartz ampoule (pipe in high temperature resistant) 7 of 2cm, puts into the internal diameter of one one end opening purity and is 99.99% stannous oxide powder 6 as reaction source, place potsherd 9 near these reaction sources, place from the place of reaction source 1.0cm on this potsherd 9 that to have sprayed thick be that electrum, area about 20 nanometers is 5 * 5mm
2 Monocrystalline silicon piece 8 as substrate, then this little quartz ampoule (pipe in high temperature resistant) 7 is put into the inside of the big quartz ampoule that internal diameter is 8cm (high temperature resistant outer tube) 3, next this big quartz ampoule (high temperature resistant outer tube) 3 is put into heating furnace 2, the thermocouple 1 (thermocouple position) that makes heating furnace 2 and the residing position of reaction source are on a vertical straight line.Whole system (being heating furnace 2) began to vacuumize 20 minutes, feeding argon gas 5 is 30sccm, make the interior vacuum degree of heating furnace reach 200Torr, make furnace temperature (thermocouple place temperature) rise to 650 ℃ rapidly from room temperature (25 ℃), be incubated 650 ℃ be 2.5 hours after, stop the heating, make furnace temperature naturally cool to room temperature (25 ℃), take out substrate, amplifying to observe through field emission microscope has tin ash/generation of tin coaxial nano cable on the substrate.
As shown in Figure 2, launch electric border photo for the field of tin ash of the present invention/tin coaxial nano cable.The diameter of whole tin ash/tin coaxial nano cable is 20～30nm, and length reaches 500～900 microns.
Be respectively X-ray diffraction analysis collection of illustrative plates, and the Raman collection of illustrative plates of (25 ℃) at normal temperatures of tin ash of the present invention/tin coaxial nano cable as shown in Figure 3, Figure 4.According to these two kinds of means of testing, can confirm that this coaxial nano cable is made of tin ash and two kinds of materials of tin.
The transmission electron microscope photo of cable of the present invention, the high-resolution photo of inner core and shell joint, the electronic diffraction photo of shell, the electronic diffraction photo of inner core is shown in (a) and (b), (c), (d) among Fig. 5.By analyzing, the inner core of tin ash/tin coaxial nano cable of synthesizing of the present invention is that diameter is the stannum nanowire of 10～15nm as can be known, shell is the tin dioxide nanometer tube of the thick 5～7.5nm of being, inner core and shell are coaxial configurations, be closely linked, between inner core and the shell without any the space.
By above-mentioned characterization method, the shell of the material of the coaxial nano cable that synthesizes of the present invention is to be made of tin dioxide nanometer tube as can be known, and inner core is to be made of stannum nanowire.Its overall dimension, inner core yardstick, shell yardstick also homogeneous order are clear.
Embodiment 2
In being the little quartz ampoule (pipe in high temperature resistant) of 3cm, puts into the internal diameter of one one end opening purity and is 99.99% stannous oxide powder as reaction source, place potsherd near these reaction sources, to have sprayed thick be that electrum, area about 50 nanometers is 6 * 6mm placing from the place of reaction source 2.0cm on this potsherd
2Monocrystalline silicon piece as substrate, then this little quartz ampoule (pipe in high temperature resistant) is put into the inside of the big quartz ampoule that internal diameter is 10cm (high temperature resistant outer tube), next this big quartz ampoule (high temperature resistant outer tube) is put into heating furnace, the thermocouple (thermocouple position) that makes heating furnace and the residing position of reaction source are on a vertical straight line.Whole system (being heating furnace) began to vacuumize 15 minutes, the feeding helium is 25sccm (a per minute standard milliliter), make in the stove vacuum degree reach 100Torr (1Torr=1/760 standard atmospheric pressure=133Pa), make furnace temperature (thermocouple place temperature) rise to 550 ℃ rapidly from room temperature (25 ℃), be incubated 550 ℃ be 4 hours after, stop heating, make furnace temperature naturally cool to room temperature (25 ℃), take out substrate, amplifying to observe through field emission microscope has tin ash/generation of tin coaxial nano cable on the substrate.
Embodiment 3
In being the little quartz ampoule (pipe in high temperature resistant) of 1cm, puts into the internal diameter of one one end opening purity and is 99.99% stannous oxide powder as reaction source, place potsherd near these reaction sources, to have sprayed thick be that electrum, area about 10 nanometers is 2 * 2mm placing from the place of reaction source 0.5cm on this potsherd
2Monocrystalline silicon piece as substrate, then this little quartz ampoule (pipe in high temperature resistant) is put into the inside of the big quartz ampoule that internal diameter is 5cm (high temperature resistant outer tube), next this big quartz ampoule (high temperature resistant outer tube) is put into heating furnace, the thermocouple (thermocouple position) that makes heating furnace and the residing position of reaction source are on a vertical straight line.Whole system (being heating furnace) began to vacuumize 60 minutes, the feeding argon gas is 60sccm, make the interior vacuum degree of stove reach 500Torr, make furnace temperature (thermocouple place temperature) rise to 750 ℃ rapidly from room temperature (25 ℃), be incubated 750 ℃ be 2 hours after, stop the heating, make furnace temperature naturally cool to room temperature (25 ℃), take out substrate, amplifying to observe through field emission microscope has tin ash/generation of tin coaxial nano cable on the substrate.
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (9)
1. tin ash/tin coaxial nano cable, it is characterized in that: its inner core is that diameter is the stannum nanowire of 10～15nm, and its shell is the tin dioxide nanometer tube of the thick 5～7.5nm of being, and inner core and shell are coaxial configuration, do not have the space between the two; The diameter of whole cable is 20～30nm, and length is 500～900 microns.
2. method for preparing the described tin ash of claim 1/tin coaxial nano cable, it is characterized in that: described tin ash/tin coaxial nano cable inner core is that diameter is the stannum nanowire of 10～15nm, its shell is the tin dioxide nanometer tube of the thick 5～7.5nm of being, inner core and shell are coaxial configuration, do not have the space between the two; The diameter of whole cable is 20～30nm, and length is 500～900 microns; The described method for preparing tin ash/tin coaxial nano cable comprises the steps: to put into reaction source in the pipe at one in high temperature resistant, and in interior pipe, place monocrystalline silicon piece as substrate from the place of reaction source 0.5～2.0cm, monocrystalline silicon piece is placed on the exotic material, then pipe in high temperature resistant is put into the inside of high temperature resistant outer tube, high temperature resistant outer tube is put into heating furnace, heating furnace vacuumized 15～60 minutes then, feed inert gas 25～60sccm again, make the interior vacuum degree of stove reach 100～500Torr, make furnace temperature rise to 550～750 ℃, and be incubated 550～750 ℃ and continue after 2～4 hours, stop heating, make furnace temperature be cooled to room temperature, promptly make tin ash/tin coaxial nano cable; Described reaction source is that purity is 99.99% stannous oxide powder.
3. the preparation method of tin ash according to claim 2/tin coaxial nano cable is characterized in that: the internal diameter of described high temperature resistant interior pipe is 1～3cm, and the internal diameter of high temperature resistant outer tube is 5～10cm.
4. the preparation method of tin ash according to claim 2/tin coaxial nano cable is characterized in that: described exotic material is a potsherd.
5. the preparation method of tin ash according to claim 2/tin coaxial nano cable is characterized in that: it is the electrum of 10～50 nanometers that described monocrystalline silicon sheet surface has sprayed thick.
6. the preparation method of tin ash according to claim 2/tin coaxial nano cable is characterized in that: described monocrystalline silicon piece area is (2 * 2)～(6 * 6) mm
2
7. the preparation method of tin ash according to claim 2/tin coaxial nano cable is characterized in that: described high temperature resistant interior pipe and high temperature resistant outer tube are quartz ampoule.
8. the preparation method of tin ash according to claim 2/tin coaxial nano cable is characterized in that: the thermocouple position of described heating furnace and the residing position of reaction source are on a vertical straight line.
9. the preparation method of a kind of tin ash according to claim 2/tin coaxial nano cable is characterized in that: described inert gas is argon gas, helium, neon, krypton gas or xenon.
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| CNB2006100355894A CN100411063C (en) | 2006-05-24 | 2006-05-24 | SnO2/Sn coaxial nano cable and preparation method and application thereof |
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| CNB2006100355894A CN100411063C (en) | 2006-05-24 | 2006-05-24 | SnO2/Sn coaxial nano cable and preparation method and application thereof |
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| CN100411063C true CN100411063C (en) | 2008-08-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103447546A (en) * | 2012-05-28 | 2013-12-18 | 南京大学 | Method for manufacturing Ag/C nano interconnecting wire in coaxial-cable structure |
| CN102879527B (en) * | 2012-09-26 | 2015-07-01 | 深圳大学 | Single quasi one-dimensional tin oxide and tin coaxial nano cable hydrogen-sensitive sensor |
| CN103811131B (en) * | 2012-11-13 | 2016-08-03 | 中国科学院物理研究所 | A kind of preparation method of coaxial nano cable |
| CN109553126B (en) * | 2019-01-02 | 2021-08-10 | 华南理工大学 | Method for preparing stannic oxide crystal by thermal evaporation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08217445A (en) * | 1995-02-20 | 1996-08-27 | Ishihara Sangyo Kaisha Ltd | Acicular conductive tin oxide fine powder and its production |
| US6200674B1 (en) * | 1998-03-13 | 2001-03-13 | Nanogram Corporation | Tin oxide particles |
| CN1475798A (en) * | 2003-07-10 | 2004-02-18 | 上海大学 | Manufacturing method of stannic dioxide nano sensor |
| CN1588569A (en) * | 2004-10-09 | 2005-03-02 | 北京科技大学 | Method for producing high yield zinc oxide nano cable |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08217445A (en) * | 1995-02-20 | 1996-08-27 | Ishihara Sangyo Kaisha Ltd | Acicular conductive tin oxide fine powder and its production |
| US6200674B1 (en) * | 1998-03-13 | 2001-03-13 | Nanogram Corporation | Tin oxide particles |
| CN1475798A (en) * | 2003-07-10 | 2004-02-18 | 上海大学 | Manufacturing method of stannic dioxide nano sensor |
| CN1588569A (en) * | 2004-10-09 | 2005-03-02 | 北京科技大学 | Method for producing high yield zinc oxide nano cable |
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