CN100409463C - Highlight extract efficiency LED electrode and producing method thereof - Google Patents
Highlight extract efficiency LED electrode and producing method thereof Download PDFInfo
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- CN100409463C CN100409463C CNB2005101321161A CN200510132116A CN100409463C CN 100409463 C CN100409463 C CN 100409463C CN B2005101321161 A CNB2005101321161 A CN B2005101321161A CN 200510132116 A CN200510132116 A CN 200510132116A CN 100409463 C CN100409463 C CN 100409463C
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Abstract
The present invention belongs to the technical field of photoelectronic devices. Traditional structures have low light extraction efficiency and bad heat reliability, and insulation layers are once grew and completed easily causing P-N junctions to leak electricity. The present invention structurally comprises a P electrode thickening electrode (1), a high reflectivity mirror protection layer (2), a metal high reflectivity mirror (3), an N electrode (4), an N type semiconductor (5), a multi-quantum well active region MQW (6), a P type semiconductor (7), a P electrode ohmic contact layer (8), an N electrode thickening electrode (9) and a substrate (10), wherein an LED table is composed of the P type semiconductor, the multi-quantum well active region MQW and the N type semiconductor. The present invention is characterized in that the side wall of the LED table is provided with a transparent insulation layer (11); the area of the upper surface of the LED table is smaller than that of the lower surface; the side wall of the LED table and a vertical surface form an acute angle; the metal high reflectivity mirror covers the P electrode ohmic contact layer and extends to and covers the transparent insulation layer but doesn't have contact with the N electrode; the refractivity of the metal high reflectivity mirror, the transparent insulation layer and the LED table are ranged in a high, low and high order. The present invention solves the problem that light is emitted from the side surface of LED, and light emitted from devices can not be effectively extracted, and can prevent the oxidation of PN junctions.
Description
Technical field:
The invention belongs to optoelectronic device manufacturing technology field, specifically relevant for the electrode structure of semiconductor light-emitting-diode (LED).
Background technology:
Semiconductor light-emitting-diode (Light Emitting Diode, LED) be a kind of opto-electronic device that electric energy is transformed into luminous energy with semiconductor.Characteristics such as it is little to have volume, and the life-span is long, and the photoelectric conversion efficiency height is pollution-free, and is energy-conservation can adapt to the requirement of the frivolous miniaturization of various application apparatuss, are widely used in various traffic signs, and the LCD back light is printed, large scale display, communication, aspects such as illumination.
The material that constitutes light-emitting diode mainly contains various kinds of compound semiconductors material such as III-V family material, II-VI family material etc.Can send the light of different colours, as purple, indigo plant, green, Huang Hehong.
The structure of known LED such as Fig. 1, Fig. 2 and Fig. 3 Fig. 4.
In the tradition LED structure, the LED that does not add speculum has six faces can bright dipping.Wherein have only an exiting surface to be utilized.If other several exiting surfaces are not used, so most of light all loses.Traditional structure ordinary electrode LED with the flat-faced tube that is generally of high reflective mirror, only in one plane light is reflected, be equivalent to have the light of two exiting surfaces to be utilized like this.Its shortcoming is to also have two exiting surfaces not to be utilized, and a lot of light are overflowed from the side of LED platform.The light that these are overflowed from the side, some packed reflective cup reflects, most of light loss loses.So occur a kind of traditional inverted pyramid structure ordinary electrode LED such as Fig. 5 again.The LED light of this traditional pyramid structure ordinary electrode is put forward efficient than the high 10%-20% of traditional structure ordinary electrode LED.But this traditional inverted pyramid structure ordinary electrode LED side does not have high reflective mirror.The benefit of this LED is that the side of LED platform becomes this certain angle with vertical plane, is generally the critical angle that device sends light.The light of directive side also is utilized like this.But also there are a lot of problems in this structure, prepares very difficultly as this inverted pyramid structure, needs could to realize with the way of corrosive liquid undercutting.And the side of traditional inverted pyramid structure ordinary electrode LED platform and the very difficult critical angle that becomes light exactly of vertical plane angulation, so a lot of light still are not utilized.Even its angle becomes the critical angle of light, but the light that LED sends is the various same sexes, and what direction has, and still has a lot of light to can not get utilizing satisfactorily.If light can not shoot out from the exiting surface that we will utilize, these light will form a large amount of heat through repeatedly reflecting and absorbing so, cause light extraction efficiency low, and thermal reliability is poor.In the traditional preparation process insulating barrier process, insulating barrier all is that a secondary growth is finished, and is easy to cause the PN junction leaky if prepare transparent insulating layer 11 with conventional method.
Summary of the invention:
Problem to be solved by this invention is to add that in the LED side high reflective mirror solves traditional LED side bright dipping, and effectively the problem of the light that extraction device sent is protected LED side PN junction simultaneously, anti-oxidation, the reliability of increase device.
Highlight extract efficiency LED electrode, its structure comprises at least: the P electrode adds thick electrode 1, high reflective mirror protective layer 2, metal high-reflection mirror 3, N electrode 4, N type semiconductor 5, Multiple Quantum Well active area MQW6, P type semiconductor 7, P electrode ohmic contact layer 8, the N electrode adds thick electrode 9, substrate 10; By P type semiconductor 7, Multiple Quantum Well active area MQW6, N type semiconductor 5 constitutes the platform of LED from top to bottom; P electrode ohmic contact layer 8 is positioned on P type semiconductor 7 surfaces at LED platform top; N electrode 4 is positioned on the N type semiconductor 5 of LED platform bottom, does not contact with the sidewall of LED platform; It is characterized in that: a transparent insulating layer 11 is arranged on the sidewall of LED platform; The platform upper surface area is less than the lower surface area; The sidewall and the perpendicular of LED platform acutangulate angle; Metal high-reflection mirror 3 covers on the P electrode ohmic contact layer 8, and extends and to cover on the transparent insulating layer 11, surrounds the top and the sidewall of LED platform, but does not contact with N electrode 4; The refractive index size is arranged as the height height between metal high-reflection mirror 3, transparent insulating layer 11 and the LED platform three.
The refractive index of transparent insulating layer 11 is less than metal high-reflection mirror 3, and also the refractive index than N type semiconductor 5, Multiple Quantum Well active area 6, P type semiconductor 7 is all little simultaneously.Transparent insulating layer 11 thickness can be 1/4th optical wavelengths that device sends light, also can right and wrong 1/4th optical wavelengths, and the best is 1/4th optical wavelength.
And index of refraction relationship constitutes the high structure of height between metal high-reflection mirror 3, transparent insulating layer 11 and the LED platform three, makes the light coherent superposition, thereby helps improving various reflection of light efficient.The sidewall and the perpendicular of LED platform acutangulate angle, and the direction of this angle can make the light of device directive side penetrate from exiting surface after metal high-reflection mirror 3 reflections.After metal high-reflection mirror 3 had been arranged, even the side of LED and vertical plane angulation are not the critical angles of device institute isolychn, the light of directive side also can be reflexed to exiting surface well.Transparent insulating layer 11 can be protected exposed PN junction simultaneously, and anti-oxidation is degenerated and improved device reliability.Exiting surface is a substrate 10.
The preparation method of highlight extract efficiency LED electrode, its preparation method comprises:
1) one grown LED structure wafer on, with common photoetching process on wafer with photoresist mask go out the platform structure pattern of LED, carve the LED platform with the ICP of ion etching system then; Carve peel-away removal photoresist behind the LED platform;
2) after sample cleans with chloroazotic acid,, on the P semiconductor 7 at LED platform top, plate one deck P electrode ohmic contact layer 8 with the method for sputter or evaporation with common photoetching process mask;
3) P electrode ohmic contact layer 8 is carried out alloy;
4) utilize common photoetching process that the sidewall of P electrode ohmic contact layer 8 and LED platform is carried out the glue protection, on the bottom of LED platform N type semiconductor 5, deposit N electrode 4 with the method for splash-proofing sputtering metal or evaporated metal; N electrode 4 does not contact with the sidewall of LED platform; Stripping photoresist;
5) utilize common photoetching process to block, then with the method for sputter or the evaporation side wall deposition layer of metal high reflective mirror 3 at P electrode ohm layer 8 and LED platform, metal high-reflection mirror 3 covers the surface of P electrode ohm layers 8 and the sidewall of the LED platform that is made of P type semiconductor 7, Multiple Quantum Well active area 6, N type semiconductor 5;
6) the method plating layer of metal with splash-proofing sputtering metal or evaporated metal forms high reflective mirror protective layer 2 on metal high-reflection mirror 3; Or, use the photoetching caustic solution again with the method for the film growth layer insulating of growing, form high reflective mirror protective layer 2;
7) plating metal simultaneously above the zone of P electrode ohmic contact layer 8 and on the N electrode 4, formation P electrode adds thick electrode 1 and the N electrode adds thick electrode 9;
8) cleavage is scratched the platform that obtains LED as shown in Figure 5 to the N type semiconductor 5 and the substrate 10 usefulness laser that link to each other between two devices;
It is characterized in that: after step 1) carves the LED platform, in step 2) prepare before the P electrode ohmic contact layer 8, on the sidewall of LED platform, prepare layer of transparent insulating barrier 11 earlier; Transparent insulating layer 11 is to carry out with two one-step growth methods: for the first time behind the sidewall growth transparent insulating layer of LED platform, ultrasonic with deionized water, the pin hole and the cavity of exposing transparent insulating layer, then at the long layer of transparent insulating barrier of the transparent insulating layer surface regeneration of growing for the first time, fill up the pin hole and the cavity of the transparent insulation laminar surface of previous growth, form transparent insulating layer 11.
Because the diauxic growth method is removed pin hole and cavity in the transparent insulating layer 11, can not produce leaky when metal level covers in the above like this, and be easy to produce leaky by the disposable insulating barrier that grows of conventional method.Because the temperature of transparent insulating layer 11 growths is not higher than the P type dopant activationary temperature of LED, so divide two one-step growth transparent insulating layers 11 can not have a negative impact to device reliability.
Description of drawings
Fig. 1 is the profile of traditional structure ordinary electrode LED
The P electrode adds thick electrode 1, high reflective mirror protective layer 2, and metal high-reflection mirror 3, N electrode 4, N type semiconductor 5, active area Multiple Quantum Well (MQW) 6, P type semiconductor 7, P electrode ohmic contact layer 8, the N electrode adds thick electrode 9, substrate 10;
Fig. 2 is the vertical view of traditional structure ordinary electrode LED
The P electrode adds thick electrode 1, high reflective mirror protective layer 2, and N type semiconductor 5, the N electrode adds thick electrode 9
Fig. 3 is the profile of inverted pyramid structure ordinary electrode LED
The P electrode adds thick electrode 1, N electrode 4, and N type semiconductor 5, active area Multiple Quantum Well (MQW) 6, P type semiconductor 7, P electrode ohmic contact layer 8, the N electrode adds thick electrode 9, substrate 10
Fig. 4 is the vertical view of inverted pyramid structure ordinary electrode LED
The P electrode adds thick electrode 1, high reflective mirror protective layer 2, and N type semiconductor 5, the N electrode adds thick electrode 9
Fig. 5 is the profile of electrode structure LED of the present invention
The P electrode adds thick electrode 4, high reflective mirror protective layer 2, and metal high-reflection mirror 3, N electrode 4, N type semiconductor 5, active area Multiple Quantum Well (MQW) 6, P type semiconductor 7, P electrode ohmic contact layer 8, the N electrode adds thick electrode 9, substrate 10, transparent insulating layer 11
Fig. 6 is the vertical view of electrode structure LED of the present invention
The P electrode adds thick electrode 1, high reflective mirror protective layer 2, and N type semiconductor 5, the N electrode adds thick electrode 9, transparent insulating layer 11
Embodiment
As shown in Figure 5, electrode structure of the present invention is implemented as follows:
1, the metal that adds thick electrode 1 and 9 is the combination of Ti/Au film system, also other metallic combinations such as Ti/Al/Ti/Au.The Ti film is as the articulamentum of N electrode 4 and Au film, and thickness is
Preferred thickness is
The thickness of Au film is
The thickness of Al film is for being
2, metal high-reflection mirror 3 covers on the transparent insulating layer 11 of P electrode ohm layer 8 surface and the sidewall of LED platform.The thickness of metal high-reflection mirror 3 on sidewall is
Metal high-reflection mirror can be Al mirror or Ag mirror.
3, the high reflective mirror protective layer 2 in the outside of metal high-reflection mirror 3 can be torpescence metal A u, also can be other torpescence metals.Perhaps be insulating barrier SiO2, SiNx etc.The thickness range of high reflective mirror protective layer 2 on the LED sidewall is
High reflective mirror protective layer 2 is if insulator film, do not have insulator layer at metal high-reflection mirror 3 and the contact area that adds between the thick electrode 1, and metal high-reflection mirror 3 adds thick electrode 1 with the P electrode and directly contacts.
4, N electrode 4 is the combination of Ti/Al metal film system.The Ti film is as the articulamentum of N type semiconductor 5 with the Al film, and thickness is
The thickness of Al film is
The sidewall of N electrode 4 and LED platform is at a distance of 10-30 μ m.
5, P electrode ohmic contact layer 8 can be metal Ni/Au, also can be other metallic combinations or is nesa coating such as indium tin oxide ITO film etc.The gross thickness of the P electrode ohmic contact layer 8 that Ni/Au metal or other metallic combinations constitute is
The electrically conducting transparent film thickness is
6, substrate 10 can be a sapphire, GaAs, silicon, or carborundum.
7, N type semiconductor 5 is N type GaN, and P type semiconductor 7 is P type GaN.
8, transparent insulating layer 11 can be SiO
2, also can be SiNx etc.The thickness range of transparent insulating layer 11 on the LED sidewall is
Optimum thickness be LED device institute emission wavelength optical thickness 1/4th.Transparent insulating layer 11 only covers the marginal portion of P type semiconductor 7, and scope is 4-10 μ m.
Embodiment 1:
As shown in Figure 5, LED electrode preparation step of the present invention is as follows:
1) one grown LED structure wafer on, earlier with Ka Er Hughes (Karl Suss) mask aligner, common photoetching process on wafer with photoresist mask go out the platform structure pattern of the LED of 300 μ m * 300 μ m areas.The thick 4 μ m of photoresist.Carve the platform of LED then with the ICP plasma etch system.The platform height is total to about 700nm from P-GaN to N-GaN.Use the ultrasonic peel-away removal photoresist of acetone after carving platform.The side of platform and vertical plane form 20 degree angles naturally.
2) strengthen the SiO that chemical vapour deposition (CVD) PECVD film deposition techniques 300 degree on the sidewall of LED platform divide two one-step growth 80nm (1/4th optical wavelength thickness of blue light 460) with ion
2(460nm light place, refractive index is 1.46).40nm SiO grows earlier
2After, ultrasonic 2 minutes of samples with water.And then growth 40nm.Remove the side SiO in addition of LED platform at last with common photoetching etch
2Obtain transparent insulating layer 11.
3) after sample cleans 5 minutes with chloroazotic acid, with the method for Denton Explorer-14 sputtering unit sputter, per second
Speed, on the P semiconductor layer 7 at LED platform top, plate one deck
The Ni film and
The Au film as ohmic contact layer 8, with the ultrasonic stripping photoresist of acetone.
4), obtain P electrode ohmic contact layer 8 sample alloy in quick anneal oven.Alloy condition is 500 degree 1 minute, N2: O2=2L: 0.5L.
5) utilize common photoetching process that glue protection is carried out in the side of P electrode district and LED platform, with the method for DentonExplorer-14 sputtering unit sputter, sputtered with Ti/Al metal film is with being N electrode 4 on the N type semiconductor 5 of the bottom of LED platform.The sidewall of N electrode and LED platform is at a distance of 20 μ m.The thickness of Ti film
Sputter rate is a per second
The thickness of Al film is
Sputter rate is a per second
6) utilize common photoetching process that the N electrode is blocked, the method with Denton Explorer-14 sputter deposits one deck in the side of P electrode ohmic contact layer 8 and LED platform then
The Ag metal, obtain metal high-reflection mirror 3.
7) method depositing Ti/Au metal level on metal high-reflection mirror 3 of usefulness Denton Explorer-14 sputter, high reflective mirror coat of metal 2.The thickness of Ti is
The thickness of Au is
Metal high-reflection mirror 3 and high reflective mirror protective layer 2 and N electrode keep the distance of 10 μ m.The sputter rate of Ti is a per second
The sputter rate of Au is a per second
8) at the P electrode district, simultaneously on the high reflective mirror protective layer 2 and sputter on the N electrode 4
Ti/Au thickening metal electrode, obtain simultaneously that the P electrode adds thick electrode 1 and the N electrode adds thick electrode 9.The sputter rate of Ti is a per second
The sputter rate of Au is a per second
9) cleavage.Scratch N type semiconductor 5 and the part that substrate 10 links to each other between two devices with laser, obtain LED as shown in Figure 5.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 4.77mW, and the LED light total radiant power of traditional structure is 3.95mW.The LED of structure of the present invention is higher by 20.7% than traditional inverted pyramid structure ordinary electrode LED luminous power of identical device preparation.Two kinds of LED test conditions are all under the 20mA constant current and record.
Embodiment 2:
As shown in Figure 5, LED electrode preparation step of the present invention is as follows:
1) one grown LED structure wafer on, earlier with Ka Er Hughes (Karl Suss) mask aligner, common photoetching process on wafer with photoresist mask go out the platform structure pattern of the LED of 300 μ m * 300 μ m areas.The thick 3 μ m of photoresist.Carve the platform of LED then with the ICP plasma etch system.The platform height is total to about 700nm from P-GaN to N-GaN.Use the ultrasonic peel-away removal photoresist of acetone after carving platform.The side of platform and vertical plane form the angle about 18 degree naturally.
2) strengthen the SiN that chemical vapour deposition (CVD) PECVD film deposition techniques 300 degree on the sidewall of LED platform divide two one-step growth 57.5nm (1/4th optical wavelength thickness of blue light 460) with ion
x(460nm place, SiN
xRefractive index is about 2).30nmSiN grows earlier
xAfter, ultrasonic 2 minutes of samples with water.And then growth 27.5nm.Obtain transparent insulating layer 11.
3) after sample cleans 5 minutes with chloroazotic acid, with the method for Denton Explorer-14 sputtering unit sputter, per second
Speed, on the P semiconductor layer 7 at LED platform top, plate one deck
The Ni film and
The Au film as ohmic contact layer 8, with the ultrasonic stripping photoresist of acetone.
4), obtain P electrode ohmic contact layer 8 sample alloy in quick anneal oven.Alloy condition is 500 degree 1 minute, N2: O2=2L: 0.5L.
5) utilize common photoetching process that glue protection is carried out in the side of P electrode district and LED platform, with the method for DentonExplorer-14 sputtering unit sputter, sputtered with Ti/Al metal film is with being N electrode 4 on the N type semiconductor 5 of the bottom of LED platform.The sidewall of N electrode and LED platform is at a distance of 10 μ m.The thickness of Ti film
Sputter rate is a per second
The thickness of Al film is
Sputter rate is a per second
6) utilize common photoetching process that the N electrode is blocked, the method with Denton Explorer-14 sputter deposits one deck in the side of P electrode ohmic contact layer 8 and LED platform then
The Al metal, obtain metal high-reflection mirror 3.
7) utilize ion to strengthen chemical vapour deposition (CVD) PECVD low temperature 120 degree growths on metal high-reflection mirror 3
Film removes metal high-reflection mirror 3 all SiO in addition with the photoetching caustic solution
2, and remove SiO directly over metal high-reflection mirror 3 with quadrat method
2, reserve a through hole, so that adding thick electrode 1 with the P electrode, metal high-reflection mirror 3 contacts.Obtain high reflective mirror protective layer 2 like this.
8) on the high reflective mirror protective layer 2 of P electrode ohmic contact layer area just above and N electrode 4 on sputter
Ti/Au thickening metal electrode, obtain simultaneously that the P electrode adds thick electrode 1 and the N electrode adds thick electrode 9.The sputter rate of Ti is a per second
The sputter rate of Au is a per second
9) cleavage.Scratch N type semiconductor 5 and the part that substrate 10 links to each other between two devices with laser, obtain LED as shown in Figure 5.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 4.65mW, and the LED light total radiant power of traditional structure is 3.93mW.The LED of structure of the present invention is higher by 18.3% than traditional inverted pyramid structure ordinary electrode LED luminous power of identical device preparation.Two kinds of LED test conditions are all under the 20mA constant current and record.
Embodiment 3:
As shown in Figure 5, LED electrode preparation step of the present invention is as follows:
1) one grown LED structure wafer on, earlier with Ka Er Hughes (Karl Suss) mask aligner, common photoetching process on wafer with photoresist mask go out the platform structure pattern of the LED of 300 μ m * 300 μ m areas.The thick 5 μ m of photoresist.Carve the platform of LED then with the ICP plasma etch system.The platform height is total to about 700nm from P-GaN to N-GaN.Use the ultrasonic peel-away removal photoresist of acetone after carving platform.The side of platform and vertical plane form 30 degree angles naturally.
2) strengthen grow the in two steps SiO of 262nm (3/4ths optical wavelength thickness of green glow 510) of chemical vapour deposition (CVD) PECVD film deposition techniques 300 degree on the sidewall of LED platform with ion
2(the SiO of 510nm place
2Refractive index is 1.47).132nm SiO grows earlier
2After, ultrasonic 2 minutes of samples with water.And then growth 130nm.Remove the side SiO in addition of LED platform at last with common photoetching etch
2Obtain insulating barrier 11.
3) after sample cleans 5 minutes with chloroazotic acid, with the method for Denton Discovery 550 evaporators evaporation, per second
Speed, at P type semiconductor 7 surface at LED platform top 350 degree evaporation ITO films, film thickness is
4), obtain P electrode ohmic contact layer 8 sample alloy in quick anneal oven.Alloy condition is 500 degree 1 minute, N2: O2=2L: 0.5L.
5) utilize common photoetching process that glue protection is carried out in the side of P electrode district and LED platform, with the method for DentonDiscovery 550 evaporators evaporation, evaporation Ti/Al metal film is with being N electrode 4 on the N type semiconductor 5 of the bottom of LED platform.The sidewall of N electrode and LED platform is at a distance of 15 μ m.The thickness of Ti film
Evaporation rate is a per second
The thickness of Al film is
Evaporation rate is a per second
6) utilize common photoetching process that the N electrode is blocked, on P electrode ohmic contact layer 8 and transparent insulating layer deposition 11, evaporate one deck with the method for Denton Discovery 550 evaporators evaporation then
The Ag metal, obtain metal high-reflection mirror 3.
7) with method depositing Ti/Au metal level on metal high-reflection mirror 3 of Denton Discovery 550 evaporators evaporation, obtain high reflective mirror coat of metal 2.The thickness of Ti is
The thickness of Au is
Metal high-reflection mirror 3 and high reflective mirror protective layer 2 and N electrode keep the distance of 20 μ m.The evaporation rate of Ti is a per second
The evaporation rate of Au is a per second
8), evaporating on the high reflective mirror protective layer 2 and on the N electrode 4 simultaneously at the P electrode district
Ti/Al/Ti/Au thickening metal electrode, obtain simultaneously that the P electrode adds thick electrode 1 and the N electrode adds thick electrode 9.The evaporation rate of Ti is a per second
The evaporation rate of Au is a per second
9) cleavage.Scratch N type semiconductor 5 and the part that substrate 10 links to each other between two devices with laser, obtain LED as shown in Figure 5.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 3.04mW, and the LED light total radiant power of traditional structure is 2.45mW.The LED of structure of the present invention is higher by 24% than traditional inverted pyramid structure ordinary electrode LED luminous power of identical device preparation.Two kinds of LED test conditions are all under the 20mA constant current and record.
Embodiment 4:
As shown in Figure 5, LED electrode preparation step of the present invention is as follows:
1) one grown LED structure wafer on, earlier with Ka Er Hughes (Karl Suss) mask aligner, common photoetching process on wafer with photoresist mask go out the platform structure pattern of the LED of 300 μ m * 300 μ m areas.The thick 4 μ m of photoresist.Carve the platform of LED then with the ICP plasma etch system.LED platform height is total to about 700nm from P-GaN to N-GaN.Use the ultrasonic peel-away removal photoresist of acetone after carving platform.The side of platform and vertical plane form 20 degree angles naturally.
2) strengthen the SiO that chemical vapour deposition (CVD) PECVD film deposition techniques 300 degree on the sidewall of LED platform divide two one-step growth 240nm (3/4ths optical wavelength thickness of blue light 460) with ion
2(460nm light place, refractive index is 1.46).120nm SiO grows earlier
2After, ultrasonic 2 minutes of samples with water.And then growth 120nm.Remove the side SiO in addition of LED platform at last with common photoetching etch
2Obtain transparent insulating layer 11.
3) after sample cleans 5 minutes with chloroazotic acid, with the method for DentonExplorer-14 sputtering unit sputter, per second
Speed, on the P semiconductor layer 7 at LED platform top, plate one deck
Ni,
Pt and
The Au film as ohmic contact layer 8, with the ultrasonic stripping photoresist of acetone.
4), obtain P electrode ohmic contact layer 8 sample alloy in quick anneal oven.Alloy condition is 500 degree 3 minutes, N2: O2=2L: 0.5L.
5) utilize common photoetching process that glue protection is carried out in the side of P electrode district and LED platform, with the method for DentonExplorer-14 sputtering unit sputter, sputtered with Ti/Al metal film is with being N electrode 4 on the N type semiconductor 5 of the bottom of LED platform.The sidewall of N electrode and LED platform is at a distance of 20 μ m.The thickness of Ti film
Sputter rate is a per second
The thickness of Al film is
Sputter rate is a per second
6) utilize common photoetching process that the N electrode is blocked, the method with Denton Explorer-14 sputter deposits one deck in the side of P electrode ohmic contact layer 8 and LED platform then
The Al metal, obtain metal high-reflection mirror 3.
7) method depositing Ti/Au metal level on metal high-reflection mirror 3 of usefulness Denton Explorer-14 sputter, high reflective mirror coat of metal 2.The thickness of Ti is
The thickness of Au is
Metal high-reflection mirror 3 and high reflective mirror protective layer 2 and N electrode keep the distance of 10 μ m.The sputter rate of Ti is a per second
The sputter rate of Au is a per second
8) at the P electrode district, simultaneously on the high reflective mirror protective layer 2 and sputter on the N electrode 4
Ti/Al/Ti/Au thickening metal electrode, obtain simultaneously that the P electrode adds thick electrode 1 and the N electrode adds thick electrode 9.The sputter rate of Ti is a per second
The sputter rate of Al is a per second
The sputter rate of Au is a per second
9) cleavage.Scratch N type semiconductor 5 and the part that substrate 10 links to each other between two devices with laser, obtain LED as shown in Figure 5.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 4.38mW, and the LED light total radiant power of traditional structure is 3.75mW.The LED of structure of the present invention is higher by 16.8% than traditional inverted pyramid structure ordinary electrode LED luminous power of identical device preparation.Two kinds of LED test conditions are all under the 20mA constant current and record.
Claims (1)
1.LED the preparation method of electrode may further comprise the steps:
1) one grown LED structure wafer on, with photoetching process on wafer with photoresist mask go out the platform structure pattern of LED, carve the LED platform with the ICP of ion etching system then; Carve peel-away removal photoresist behind the LED platform;
2) after sample cleans with chloroazotic acid, form mask, with method plating one deck P electrode ohmic contact layer (8) on the P type semiconductor (7) at LED platform top of sputter or evaporation with photoetching process;
3) P electrode ohmic contact layer (8) is carried out Alloying Treatment;
4) utilize photoetching process that the sidewall of P electrode ohmic contact layer (8) and LED platform is carried out the photoresist protection, go up deposition N electrode (4) at the N type semiconductor (5) of LED platform bottom with the method for splash-proofing sputtering metal or evaporated metal; N electrode (4) does not contact with the sidewall of LED platform; Stripping photoresist;
5) utilizing photoetching process to form blocks, then with the method for sputter or the evaporation side wall deposition layer of metal high reflective mirror (3) at P electrode ohmic contact layer (8) and LED platform, metal high-reflection mirror (3) covers the surface of P electrode ohm layer contact layer (8) and the sidewall of the LED platform that is made of P type semiconductor (7), Multiple Quantum Well active area (6), N type semiconductor (5);
6) the method plating layer of metal that goes up with splash-proofing sputtering metal or evaporated metal at metal high-reflection mirror (3) forms high reflective mirror protective layer (2); Or, use the photoetching caustic solution again with the method for the film growth layer insulating of growing, form high reflective mirror protective layer (2);
7) on the zone top of P electrode ohmic contact layer (8) and N electrode (4), plate metal simultaneously, form that the P electrode adds thick electrode (1) and the N electrode adds thick electrode (9);
8) cleavage is scratched the N type semiconductor (5) that links to each other between two devices and substrate (10) and to be obtained the LED platform with laser;
It is characterized in that: after step 1) carves the LED platform, in step 2) prepare P electrode ohmic contact layer (8) before, on the sidewall of LED platform, prepare layer of transparent insulating barrier (11) earlier; Transparent insulating layer (11) is to carry out with two one-step growth methods: for the first time behind the sidewall growth transparent insulating layer of LED platform, ultrasonic with deionized water, the pin hole and the cavity of exposing transparent insulating layer, then at the long layer of transparent insulating barrier of the transparent insulating layer surface regeneration of growing for the first time, fill up the pin hole and the cavity of the transparent insulation laminar surface of previous growth, form transparent insulating layer (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101321161A CN100409463C (en) | 2005-12-16 | 2005-12-16 | Highlight extract efficiency LED electrode and producing method thereof |
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|---|---|---|---|
| CNB2005101321161A CN100409463C (en) | 2005-12-16 | 2005-12-16 | Highlight extract efficiency LED electrode and producing method thereof |
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| CN1812146A CN1812146A (en) | 2006-08-02 |
| CN100409463C true CN100409463C (en) | 2008-08-06 |
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| US9601657B2 (en) | 2011-03-17 | 2017-03-21 | Epistar Corporation | Light-emitting device |
| CN104409599B (en) * | 2014-11-20 | 2017-04-19 | 华灿光电股份有限公司 | LED chip and manufacturing method thereof |
| KR102239627B1 (en) * | 2015-03-26 | 2021-04-12 | 엘지이노텍 주식회사 | Light emitting device package |
| CN112635629A (en) * | 2020-12-30 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN112652688A (en) * | 2020-12-30 | 2021-04-13 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN112652690A (en) * | 2020-12-30 | 2021-04-13 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN114236334B (en) * | 2021-11-05 | 2023-10-10 | 严群 | Light excitation enhanced current injection LED electroluminescent performance detection system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031540A (en) * | 1999-06-18 | 2000-01-28 | Toyoda Gosei Co Ltd | Manufacture of gallium nitride based compound semiconductor light emitting element |
| US20030025212A1 (en) * | 2001-05-09 | 2003-02-06 | Bhat Jerome Chandra | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
| JP2003258297A (en) * | 2002-02-27 | 2003-09-12 | Shiro Sakai | Gallium-nitride-based compound semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031540A (en) * | 1999-06-18 | 2000-01-28 | Toyoda Gosei Co Ltd | Manufacture of gallium nitride based compound semiconductor light emitting element |
| US20030025212A1 (en) * | 2001-05-09 | 2003-02-06 | Bhat Jerome Chandra | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
| JP2003258297A (en) * | 2002-02-27 | 2003-09-12 | Shiro Sakai | Gallium-nitride-based compound semiconductor device |
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