CN100401433C - Polycrystalline FeO thin-film materials and production thereof - Google Patents

Polycrystalline FeO thin-film materials and production thereof Download PDF

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CN100401433C
CN100401433C CNB2006100130547A CN200610013054A CN100401433C CN 100401433 C CN100401433 C CN 100401433C CN B2006100130547 A CNB2006100130547 A CN B2006100130547A CN 200610013054 A CN200610013054 A CN 200610013054A CN 100401433 C CN100401433 C CN 100401433C
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polycrystalline
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CN1819077A (en
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刘晖
王雅欣
王健
刘技文
张德贤
孙云
李志青
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Nankai University
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Abstract

The present invention relates to a polycrystalline Fe3O4 film material and a preparation method thereof. The polycrystalline Fe3O4 film material is prepared on a substrate, Fe3O4 crystal grains has 13 to 19 nm in grain size and 200 to 500 nm in thickness, polycrystalline grains in the Fe3O4 film has random orientation and no texture, and the numerical value of the room-temperature magnetoresistance is from 10 to 12%. The preparation method of the olycrystalline Fe3O4 film adopts a DC magnetron sputtering technology to deposit the polycrystalline Fe3O4 film by controlling oxygen flow and the sputtering power of iron targets in mixed atmosphere of argon and oxygen, and the method uses glass, quartz, polyester, single crystal silicon, single crystal gallium arsenide, etc. as substrate materials which are not heated during sputtering. The method of the present invention has the advantages of low temperature and simple preparation process, so the present invention can be applicable to various substrate materials.

Description

Polycrystalline Fe 3O 4The preparation method of thin-film material and application thereof
Technical field
The present invention relates to a kind of polycrystalline Fe 3O 4Thin-film material and preparation method thereof, it has the polycrystalline Fe of higher room-temperature magnetoresistance numerical value 3O 4Film and preparation method at ambient temperature thereof.
Background technology
Seminar from French scientist A.Fert in 1988 has found giant magnetoresistance (giant magnetoresistance, GMR) since the effect, because giant magnetic resistor material has highfield sensitivity, therefore be widely applied to computer magnetic reading head, Weak magentic-field detection, position probing or the like magneto-dependent sensor spare very soon, relate to ambits such as information technology, medical science, chemistry, biology.Over particularly nearest more than 10 years, the application and development of magnetic resistance material is obtained progress rapidly, receive tangible economic benefit and social benefit.
Giant magnetoresistance effect derives from the electronic transmission process and scattering effect spin correlation or tunneling effect, and it is relevant with the spin polarizability of the relative orientation of the magnetization of adjacent magnet unit and conduction electron.In the giant magnetoresistance effect of MTJ or magnetic metal one insulator particle system, the transport mechanism of electronics is a tunnel effect, this giant magnetoresistance effect be also referred to as usually tunnelling type magneto-resistor (tunnel magnetoresistance, TMR).The magneto-resistance effect of tunnelling type is proportional to the spin polarizability of ferromagnetic material, has high magneto-resistor numerical value.Therefore, seeking and successfully prepare the magnetic material with high spinning polarizability is present this field one of active subject the most.
Fe 3O 4, CrO 2, materials such as LaSrMnO, NiMnSb band structure between metal and insulator, be called as semimetal (half-metal) material.For a spin direction, the band structure of semi-metallic has metallic character, has certain density of states near Fermi surface; And to another kind of spin direction, its band structure has the insulator characteristic, near Fermi surface the density of states be zero or electronics be localization, therefore, semi-metallic should have 100% spin polarizability and the highest magneto-resistor numerical value.
In known semi-metallic, Fe 3O 4The highest high-curie temperature with 850K, in addition, Fe 3O 4Also have advantages such as crystal structure is simple, phase structure stable, still can strictly keep its stoicheiometry and structure than metal material resistance to oxidation, below 10nm, preparation cost is low, become the preferred material of magnetoelectronic devices materials such as magnetic recording magnetic reading head, magnetic random memory.
At present, the Fe of bibliographical information 3O 4The preparation method of film has multiple, can be divided into from preparing on the raw-material type: prepare the iron film earlier, be oxidized to Fe then 3O 4Film; Evaporation or sputter iron material directly prepare Fe under oxygen atmosphere 3O 4Film; And directly evaporate or sputter Fe 3O 4Material forms Fe 3O 4Three classes such as film.On used device type, preparation Fe 3O 4The method of film can be divided into pulsed laser deposition, molecular beam epitaxy, magnetron sputtering, electron beam evaporation etc., sees Table 1.At above-mentioned preparation Fe 3O 4In the method for film, the employed substrate overwhelming majority is a monocrystal material, and preparation temperature is more than 250 ℃, and complicated process of preparation, the difficult control of condition.For example, the dijection that document in the table 1 [J.P.Hong, S.B.Lee, Y.W.Jung, et.al.Appl.Phys.Lett.83,2003, p1590] adopts is magnetron sputtering method frequently, must just can prepare Fe at the outside radio-frequency power supply of assisting that increases of vacuum chamber 3O 4Film.Again for example, document in the table 1 [Y.X.Lu, J.S.Claydon, Y.B.Xu, et.al.Phys.Rev.B 70.p233304-1～4 (2004)] has adopted first preparation iron film, just can obtain Fe in oxygen gas part and the method that is higher than oxidation under 200 ℃ of conditions then 3O 4Film.And above-mentioned document does not relate to concrete preparation method.
Table 1: the Fe that reports in the document 3O 4Several preparation methods in the film
The preparation method Substrate Growth temperature Raw material The document source
Pulsed laser deposition Monocrystalline MgO (001) or single crystalline Si (001) 340℃ Fe 3O 4Target D.Reisinger，et.al.Appl.Phys. Lett.85，4980(2004).
Oxonium ion accessory molecule beam epitaxy Monocrystalline MgO (100) 250℃ Iron Y.Zhou，X.Jin，and I.V.Shvets，J. Appl.Phys.95，7357(2004).
Dijection frequency power magnetron sputtering Single crystalline Si (100) Room temperature Iron J.P.Hong，S.B.Lee，Y.W.Jung， et.al.Appl.Phys.Lett.83，1590 (2003).
Electron beam evaporation Monocrystalline GaAs (100) Room temperature The oxidation of iron film Y.X.Lu，et.al.Phys.Rev.B 70， 233304-1～4(2004).
Magnetically controlled DC sputtering Monocrystalline GaAs (100) 400℃ Iron S.M.Watts，et.al.J.Appl.Phys.95， 7465(2004).
Molecular beam epitaxy Monocrystalline α-Al 2O 3 (0001) 300℃ Iron H.Li，Y.Wu，Z.Guo，et.al.Appl. Phys.Lett.86，252507(2005)
Fe as the application of magneto-resistance device material 3O 4Film, its preparation method must be compatible with semiconductor technology, and wherein preparation temperature requires less than 300 ℃.In addition, magneto-resistance effect is a kind of extrinsic performance of material, and its size is closely related with material interface or granule boundary, for example the Fe of block 3O 4The magneto-resistor numerical value of monocrystalline approaches zero.Therefore, be as the material in the magneto-resistance device, Fe 3O 4Film must have the untextured polycrystalline structure of crystal grain random orientation, has high room-temperature magnetoresistance numerical value, and its preparation temperature is low, preparation technology simple, be applicable to multiple substrate.
Summary of the invention
The purpose of this invention is to provide a kind of polycrystalline Fe 3O 4Thin-film material can solve Fe in the prior art 3O 4The problem that exists in thin-film material and the preparation process thereof.Fe of the present invention 3O 4Thin-film material polycrystalline particle random orientation has higher room-temperature magnetoresistance numerical value, is applicable to multiple substrate.
Another object of the present invention provides the described polycrystalline Fe of a kind of manufacturing 3O 4The method of thin-film material, its preparation technology is simple.
Polycrystalline Fe provided by the invention 3O 4Thin-film material is to form polycrystalline Fe on substrate 3O 4Film, Fe 3O 4The size of microcrystal size is 13～19 nanometers, thickness 200-500nm, and the crystal grain random orientation does not have texture, and the room-temperature magnetoresistance numerical value of film is at 10-20%.Described substrate is glass, quartz, polyester, monocrystalline silicon, monocrystalline GaAs etc.
Polycrystalline Fe of the present invention 3O 4The preparation method of thin-film material is through following step:
1) adopt general superhigh vacuum magnetron sputtering film-plating machine, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) with after substrate cleaning, the oven dry, be installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber, oxygen flow is 1.0～4.0sccm;
7) treat vacustat after, on the iron target, be set at 100～150 watts direct current power, pre-sputter 10～15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 20～25 rev/mins speed Rotating with Uniform, and substrate is not heated.
9) after sputtering sedimentation is finished, close the DC power supply of iron target, keep continuing in the sputter vacuum chamber feeding argon gas and oxygen half an hour of same traffic.
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film sample.
Described substrate is glass, quartz, polyester, monocrystalline silicon, monocrystalline GaAs etc.
Polycrystalline Fe of the present invention 3O 4Film can be used to make magneto-dependent sensor spares such as computer magnetic reading head, magnetic random memory, Weak magentic-field detection, position probing.
The polycrystalline Fe that the present invention prepares 3O 4Thin-film material is compared with present same type of material of depositing, its polycrystalline particle random orientation, have higher room-temperature magnetoresistance numerical value, preparation technology simple, be applicable to advantage such as multiple substrate.
Description of drawings
Fig. 1 is that the thickness of embodiment 1 preparation is the polycrystalline Fe of 300nm 3O 4The X-ray diffractogram of film.
Fig. 2 is that the thickness of embodiment 1 preparation is the polycrystalline Fe of 300nm 3O 4The bright field image of the transmission electron microscope of film and selected area electron diffraction figure.
Fig. 3 is that the thickness of embodiment 1 preparation is the polycrystalline Fe of 300nm 3O 4The x-ray photoelectron spectroscopy of film.
Fig. 4 is that the thickness of embodiment 1 preparation is the polycrystalline Fe of 300nm 3O 4The room-temperature magnetoresistance test result of film.
Fig. 5 is that the thickness of embodiment 2 preparations is the polycrystalline Fe of 210nm 3O 4The bright field image of the transmission electron microscope of film.
Fig. 6 is that the thickness of embodiment 4 preparations is the polycrystalline Fe of 370nm 3O 4The bright field image of the transmission electron microscope of film.
Fig. 7 is polycrystalline Fe 3O 4The room temperature magneto-resistor curve of film.
Embodiment
Below will the present invention is further illustrated by specific embodiment.
Polycrystalline Fe 3O 4The magneto-resistance effect of film is a kind of extrinsic performance of material, and is closely related with the factors such as thickness of the granular size of material, intergranular interaction, film.The present invention utilizes magnetically controlled sputter method, on substrates such as glass, quartz, polyester, monocrystalline silicon, monocrystalline GaAs, by in preparation process, regulating the sputtering power and the sedimentation time of oxygen flow, iron target, obtain the polycrystalline Fe of the crystal grain random orientation of variable grain size and magneto-resistor numerical value 3O 4Thin-film material.
Polycrystalline Fe of the present invention 3O 4The following step of preparation method's process of thin-film material:
1) adopt general superhigh vacuum magnetron sputtering film-plating machine, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) substrate is placed in the absolute methanol with ultrasonic waves for cleaning three times each three minutes and renew liquid; Use rinsed with deionized water then five times, each three minutes and renew liquid; After drying up with the compressed nitrogen of drying, substrate is installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber, oxygen flow is 1.0～4.0sccm;
7) treat vacustat after, on the iron target, be set at 100～150 watts direct current power, pre-sputter 10～15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 20～25 rev/mins speed Rotating with Uniform, and substrate is not heated.
9) after sputtering sedimentation is finished, close the DC power supply of iron target, keep continuing in the sputter vacuum chamber feeding argon gas and oxygen half an hour of same traffic.
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film sample.
Embodiment 1
1) the DPS-III type superhigh vacuum magnetron sputtering film-plating machine at Shenyang section of employing Chinese Academy of Sciences instrument center, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) substrate is placed in the absolute methanol with ultrasonic waves for cleaning three times each three minutes and renew liquid; Use rinsed with deionized water then five times, each three minutes and renew liquid; After drying up with the compressed nitrogen of drying, substrate is installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber, oxygen flow is 1.0sccm;
7) treat vacustat after, on the iron target, be set at 100 watts direct current power, pre-sputter 15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 25 rev/mins speed Rotating with Uniform, and substrate is not heated.
9) after sputtering sedimentation is finished, close the DC power supply of iron target, keep continuing in the sputter vacuum chamber feeding argon gas and oxygen half an hour of same traffic.
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film sample.
It is the Fe of 300nm that Fig. 1 has provided the prepared thickness of present embodiment 3O 4The X-ray diffractogram of film, as can be seen from the figure, Fe 3O 4Film is a polycrystalline structure, and the ratio of the intensity of each diffraction maximum and powder sample basically identical prove prepared Fe in its X-ray diffractogram 3O 4Polycrystalline particle random orientation in the film does not have texture.
Fig. 2 is that embodiment 1 prepared thickness is the polycrystalline Fe of 300nm 3O 4The bright field image of the transmission electron microscope of film and selected area electron diffraction figure, the model of used electron microscope is JEOL 2010F.As can see from Figure 2, the prepared Fe of embodiment 1 3O 4Film is a polycrystalline structure, and its mean particle size is at 15.9nm.
The model that adopts Muti-technic company to produce is the x-ray photoelectron spectrometer of Physical Electronic spectrometer S600, and the thickness that embodiment 1 is prepared is the polycrystalline Fe of 300nm 3O 4Film carries out the composition test, the results are shown in Figure 3.
Because Fe 3O 4And γ-Fe 2O 3Have identical cube inverse spinel structure, and lattice constant is very near (Fe 3O 4Be a=0.8396nm, γ-Fe 2O 3Be a=0.8350nm), there is nuance near both the XRD diffraction spectra only diffraction maximum 37 °, consider the factors such as stress that exist in the film, and both are difficult to make a distinction from structural analysis.And Fe 3O 4And γ-Fe 2O 3Therefore the chemical valence state difference of middle Fe ion can be distinguished by the way of analysis of components.In the test result that in Fig. 3, provides, Fe 2+Characteristic peak be positioned at 709 and 723eV, Fe2p 1/2And Fe2p 3/2The peak broadening; There is not γ-Fe 2O 3Be positioned at the Fe at 719eV place in the standard spectrum 3+The feature satellites.These two characteristics illustrate that the sample that we prepare is Fe 3O 4, do not have γ-Fe in the sample 2O 3Exist.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, the thickness of having measured embodiment 1 preparation is the polycrystalline Fe of 300nm 3O 4The room-temperature magnetoresistance of film, institute adds magnetic field and is parallel to film surface, and the magneto-resistor numerical value that records is 10.4% under the magnetic field of 50KOe, the results are shown in Figure 4.
Above-mentioned test result is listed in table 2.
Part preparation condition and the test result of table 2: embodiment 1～4.
Substrate Iron target power output (W) Oxygen flow (sccm) Film thickness (nm) Room-temperature magnetoresistance (%) Granular size (nm)
Embodiment 1 Glass 100 1.0 300 10.4 15.9
Embodiment 2 Glass 115 1.6 210 10.1 13.5
Embodiment 3 Glass 130 2.5 430 10.9 16.2
Embodiment 4 Glass 150 4.0 370 11.9 18.6
Embodiment 2
1) the DPS-III type superhigh vacuum magnetron sputtering film-plating machine at Shenyang section of employing Chinese Academy of Sciences instrument center, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) substrate is placed in the absolute methanol with ultrasonic waves for cleaning three times each three minutes and renew liquid; Use rinsed with deionized water then five times, each three minutes and renew liquid; After drying up with the compressed nitrogen of drying, substrate is installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber, oxygen flow is 1.6sccm;
7) treat vacustat after, on the iron target, be set at 115 watts direct current power, pre-sputter 15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 25 rev/mins speed Rotating with Uniform, and substrate is not heated.
9) after sputtering sedimentation is finished, close the DC power supply of iron target, continue to keep argon gas and oxygen half an hour of same traffic.
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film sample.
The employing model is that the transmission electron microscope of JEOL 2010F is the polycrystalline Fe of 210nm to embodiment 2 prepared thickness 3O 4Film is tested, and its mean particle size is seen Fig. 5 at 13.5nm.The room-temperature magnetoresistance of this sample is 10.1%, sees Table 2.
Embodiment 3
1) adopt general superhigh vacuum magnetron sputtering film-plating machine, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) substrate is placed in the absolute methanol with ultrasonic waves for cleaning three times each three minutes and renew liquid; Use rinsed with deionized water then five times, each three minutes and renew liquid; After drying up with the compressed nitrogen of drying, substrate is installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber, oxygen flow is 2.5sccm;
7) treat vacustat after, on the iron target, be set at 130 watts direct current power, pre-sputter 15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 25 rev/mins speed Rotating with Uniform, and substrate is not heated.
9) after sputtering sedimentation is finished, close the DC power supply of iron target, continue to keep argon gas and oxygen half an hour of same traffic.
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film sample.
Test result shows, the polycrystalline Fe that this embodiment is prepared 3O 4The thickness of film is 430nm, and the average grain yardstick is 16.2nm, and room-temperature magnetoresistance is 10.9%, sees Table 2.
Embodiment 4
1) adopt general superhigh vacuum magnetron sputtering film-plating machine, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) substrate is placed in the absolute methanol with ultrasonic waves for cleaning three times each three minutes and renew liquid; Use rinsed with deionized water then five times, each three minutes and renew liquid; After drying up with the compressed nitrogen of drying, substrate is installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber, oxygen flow is 4.0sccm;
7) treat vacustat after, on the iron target, be set at 150 watts direct current power, pre-sputter 15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 25 rev/mins speed Rotating with Uniform, and substrate is not heated.
9) after sputtering sedimentation is finished, close the DC power supply of iron target, continue to keep argon gas and oxygen half an hour of same traffic.
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film sample.
The employing model is that the transmission electron microscope of JEOL 2010F is the polycrystalline Fe of 370nm to embodiment 4 prepared thickness 3O 4Film is tested, and its mean particle size is seen Fig. 6 at 18.6nm.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, the thickness of having measured embodiment 4 preparations is the polycrystalline Fe of 370nm 3O 4The room temperature magneto-resistor of film, institute adds magnetic field and is parallel to film surface, and the magneto-resistor numerical value that records is 11.9% under the magnetic field of 50KOe, the results are shown in Figure 7.
The polycrystalline Fe of the present invention's preparation 3O 4Thin-film material is compared with present same type of material of depositing, its polycrystalline particle random orientation, have higher room-temperature magnetoresistance numerical value, preparation technology simple, be applicable to advantage such as multiple substrate.

Claims (6)

1. polycrystalline Fe 3O 4The preparation method of thin-film material is characterized in that comprising the following steps:
1) adopt the superhigh vacuum magnetron sputtering film-plating machine, installation purity is 99.99% iron target on the target platform, and the thickness of target is 2.5mm, and diameter is 60mm;
2) substrate is placed in the absolute methanol with ultrasonic waves for cleaning three times each three minutes and renew liquid; Use rinsed with deionized water then five times, each three minutes and renew liquid; After drying up with the compressed nitrogen of drying, substrate is installed on the substrate turntable, the distance of substrate and iron target is 8cm;
3) vacuumize, make the back of the body of sputter vacuum chamber at the bottom of vacuum degree be better than 3 * 10 -7Torr;
4) 99.999% highly purified argon gas is fed vacuum chamber, argon flow amount is 10sccm;
5) drop to 3 * 10 in vacuum degree -4During Torr, the open degree of ultra high vacuum slide valve is set at 20%;
6) 99.999% highly purified oxygen is fed vacuum chamber;
7) treat vacustat after, on the iron target, be set at 100～150 watts direct current power, pre-sputter 10～15 minutes;
8) open the baffle plate spatter film forming of iron target and substrate, substrate is with 20～25 rev/mins speed Rotating with Uniform, and substrate is not heated;
9) after sputtering sedimentation is finished, close the DC power supply of iron target;
10) closure molecule pump and mechanical pump are opened vacuum chamber, take out the prepared film material sample.
2. polycrystalline Fe according to claim 1 3O 4The preparation method of thin-film material is characterized in that using the direct current magnetron sputtering process preparation, and substrate does not heat in the deposition process.
3. polycrystalline Fe according to claim 1 3O 4The preparation method of thin-film material is characterized in that oxygen flow is 1.0～4.0sccm in preparation process.
4. polycrystalline Fe according to claim 1 3O 4The preparation method of thin-film material is characterized in that substrate for use is glass, quartz, polyester, monocrystalline silicon or monocrystalline GaAs material.
5. polycrystalline Fe according to claim 1 3O 4The preparation method of thin-film material, it is characterized in that sputtering sedimentation is finished after, close the DC power supply of iron target, continue to keep argon gas and oxygen half an hour of same traffic.
6. the prepared polycrystalline Fe of claim 1 3O 4The application of thin-film material is characterized in that being used for making computer magnetic reading head, magnetic random memory, Weak magentic-field detection or position probing magneto-dependent sensor spare.
CNB2006100130547A 2006-01-16 2006-01-16 Polycrystalline FeO thin-film materials and production thereof Expired - Fee Related CN100401433C (en)

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JPH04125817A (en) * 1990-09-18 1992-04-27 Tdk Corp Production of magnetic recording medium
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Publication number Priority date Publication date Assignee Title
CN1045997A (en) * 1989-04-01 1990-10-10 北京大学 The preparation of ferric oxide film by sputtering
US5186854A (en) * 1990-05-21 1993-02-16 The United States Of America As Represented By The Secretary Of The Navy Composites having high magnetic permeability and method of making
JPH04125817A (en) * 1990-09-18 1992-04-27 Tdk Corp Production of magnetic recording medium

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Title
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高温退火Fe3O4薄膜的结构和磁输运性质研究. 张国民等.中央民族大学学报（自然科学版），第13卷第2期. 2004
高温退火Fe3O4薄膜的结构和磁输运性质研究. 张国民等.中央民族大学学报（自然科学版），第13卷第2期. 2004 *

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