CN100397591C - Method for producing low dielectric constant material layer - Google Patents
Method for producing low dielectric constant material layer Download PDFInfo
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- CN100397591C CN100397591C CNB021246084A CN02124608A CN100397591C CN 100397591 C CN100397591 C CN 100397591C CN B021246084 A CNB021246084 A CN B021246084A CN 02124608 A CN02124608 A CN 02124608A CN 100397591 C CN100397591 C CN 100397591C
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- material layer
- layer
- dielectric constant
- low dielectric
- manufacture method
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Abstract
The present invention relates to a method for manufacturing a material layer with a low dielectric constant, which comprises the following steps: firstly, a polymer material layer is formed on a base, and then is cured; sequentially, a bonding material layer is formed on the polymer material layer, and uses an organic silicon compound having a silicon containing section and a non-saturated hydrogen section which are connected as the main component; then, the bonding material layer is cured so that the organic silicon compound and polymer material are in generate to generate bonding, and thus, the polymer material layer is provided with a silicon containing surface; additionally, the polymer material layer and the bonding material layer can be simultaneously cured.
Description
Technical field
The present invention is relevant a kind of semiconductor fabrication process, and the manufacture method of relevant a kind of low dielectric constant material layer (Low-k Dielectric Material Layer) particularly.
Background technology
Advanced low-k materials is applied in great scale integrated circuit (Ultra-Large ScaleIntegrated (ULSI) Circuit) manufacture craft mostly, with " interlayer dielectric layer " (Inter-Layer Dielectrics, material ILD) as the different conductor interlayer.This is because the employing advanced low-k materials can significantly reduce the resistance capacitance late effect (RC Delay) of device, and its usefulness that is increased; And the thermal stability of advanced low-k materials also meets the manufacture craft demand.But, for the advanced low-k materials of organic polymer kenel, because its mechanical strength (Mechanical Strength) deficiency, so easily the cmp of follow-up damascene (Damascene) manufacture craft (Chemical Mechanical Polishing, CMP) impaired in the step.Therefore, must form a siliceous inorganic dielectric layer on the organic low dielectric constant material layer, with as grinding suspension layer (Polishing Stop Layer), the material of this siliceous inorganic dielectric layer is generally silicon nitride (silicon nitride) or carborundum (silicon carbide).
Yet, because inorganic material and the zygosity between the organic low dielectric constant material of silicon nitride or carborundum and so on are not good, peel off, and the organic low dielectric constant material layer below can't protecting, and may cause problem such as particulate so grind suspension layer Chang Rongyi.Known solution forms one deck HMDS (Hexamethyldisilazane) earlier on the organic low dielectric constant material surface, and then forms siliceous inorganic dielectric layer.Because siliceous inorganic dielectric layer is better than adhesive force to the organic low dielectric constant material layer to the adhesive force of HMDS, so the zygosity of siliceous inorganic dielectric layer and organic low dielectric constant material layer gets improvement is arranged slightly during the employing known method.But, because HMDS only is better than siliceous inorganic dielectric layer slightly to the adhesive force of organic low dielectric constant material layer, so the zygosity of siliceous inorganic dielectric layer and organic low dielectric constant material layer can't further improve.
Summary of the invention
For this reason, the present invention proposes a kind of manufacture method of low dielectric constant material layer, and its step is as follows: at first form a polymer material layer, this polymer material layer of slaking again in substrate.Then on this polymer material layer, form a layer of bonding material, its principal component is organo-silicon compound, and these organo-silicon compound have continuous one and contain a silicon fragment (silicon-containingmoiety) and full hydrocarbon fragment (unsaturated hydrocarbon moiety) that closes.This layer of bonding material of slaking then, order wherein the organo-silicon compound and the surface reaction of polymer material layer and produce bond contain silicon face so that this polymer material layer has one.In addition, above-mentioned polymer material layer also can with layer of bonding material slaking simultaneously.
The present invention also proposes a kind of manufacture method of interlayer dielectric layer, it obtains the siliceous polymer material layer in surface with the manufacture method of above-mentioned low dielectric constant material layer of the present invention earlier, forms the siliceous inorganic material layer of silicon nitride or carborundum and so on again on this polymer material layer.
In the manufacture method of low dielectric constant material layer of the present invention and interlayer dielectric layer, because closing hydrocarbon fragment, full in the organo-silicon compound can produce bond with the surface of the polymer material layer of lower floor, and the affinity (Affinity) that contains the siliceous inorganic material layer on silicon fragment and upper strata is excellent, so strengthened the zygosity of siliceous inorganic material layer and polymer material layer, and prevented that siliceous inorganic material layer from producing peeling phenomenon.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborate.
Description of drawings
Fig. 1 is the schematic diagram of the manufacture method of low dielectric constant material layer of the present invention, and it illustrates the state of organo-silicon compound on polymer material layer as grafting material.
Label declaration:
100: polymer material layer
110: organo-silicon compound
110a, 110b: contain silicon fragment, the not full hydrocarbon fragment that closes
Embodiment
Be the manufacture method of the low dielectric constant material layer of preferred embodiment of the present invention below, this low dielectric constant material layer is the main body of an interlayer dielectric layer (ILD).Details are as follows for the step of the method.
At first, form a polymer material layer in a substrate, its method for example is spin-coating method (Spin-On Coating), and then this polymer material layer of slaking.The composition of this polymer material layer for example is the commodity SiLK that Dow Chemical (Dow Chemicals) produces, its active ingredient is the aromatic compound (aromatic compound) of a tool acetenyl (ethynyl), and this active ingredient can be polymerized when slaking and is macromolecule.
Then, form a layer of bonding material on this polymer material layer, its principal component is organo-silicon compound.Please refer to Fig. 1, these organo-silicon compound 110 have to link to each other and one contain that silicon fragment 110a and is full to close hydrocarbon fragment 110b, and wherein containing silicon fragment 110a for example is triethoxysilicane alkyl (triethoxysilanyl ,-Si (OC
2H
5)
3) or three second acyloxy grp silylation (triacetoxysilanyl ,-Si (OC (=O) CH
3)
3), and full close hydrocarbon fragment 110b for example for acrylic (allyl ,-C-C=C) or-C
2～C
4α-acetenyl (α-ethynyl), wherein C
2The structural formula of α-acetenyl be (C ≡ C), and C
4The structural formula of α-acetenyl be (C-C-C ≡ C).The formation method of this layer of bonding material for example is that organo-silicon compound 110 are dissolved in the solvent, again with spin-coating method with the solution coat of gained on polymer material layer 100, wherein solvent is the above-mentioned macromolecular material person of solubilized.Can invade in the surface portion of polymer material layer 100 owing to solvent this moment, i.e. " swelling " (Swell) polymer material layer 100 of this part, so organo-silicon compound 110 are diffused into the not full hydrocarbon fragment 110b that closes of surface portion, the especially organo-silicon compound 110 of polymer material layer 100.
Following step is this layer of bonding material of slaking, makes the not full of organo-silicon compound 110 close hydrocarbon fragment 110b and polymer material layer 100 reactions and produce bond, makes polymer material layer 100 have one and contains silicon face, as shown in Figure 1.The method of slaking herein is for example for adding thermal maturation (Thermal Curing) method or ultraviolet light slaking method (UV Curing), it can be opened full two keys or the triple bond that closes hydrocarbon fragment 110b, and with polymer material layer 100 in polymer chain (Polymer Chain) bond.Above-mentioned mechanism of just reacting after polymer material layer 100 slakings is called " osmopolymer links continuously " (Sequential InterpenetratingPolymer Networking).
In addition, if the predecessor of polymer material layer is for having full key person, SiLK as the aforementioned, then the maturation stage of polymer material layer also can be delayed, and carries out simultaneously with the slaking of layer of bonding material.The full hydrocarbon fragment that closes of the organo-silicon compound in the layer of bonding material can close the predecessor bond with satisfying of macromolecular material laminar surface at this moment, simultaneously full close predecessor also mutually polymerization become high molecular polymer, like this promptly being equal to is attached at organo-silicon compound on the surface of polymer material layer, contains silicon face and make this polymer material layer have one.
Then be noted that the manufacture method of the interlayer dielectric layer of preferred embodiment of the present invention.
After the siliceous polymer material layer in above-mentioned surface forms, form a siliceous inorganic dielectric layer more thereon, its method for example is that (Chemical VaporDeposition, CVD), and the material of this siliceous inorganic dielectric layer for example is silicon nitride or carborundum to chemical vapour deposition technique.This siliceous inorganic dielectric layer and polymer material layer cooperation are an interlayer dielectric layer; polymer material layer below wherein siliceous inorganic dielectric layer can be protected in the cmp step of follow-up damascene manufacture craft; and the thickness of siliceous inorganic dielectric layer is usually much smaller than polymer material layer, in order to avoid the dielectric constant of this interlayer dielectric layer integral body is too high.
As mentioned above, in the manufacture method of low dielectric constant material layer of the present invention and interlayer dielectric layer, because closing hydrocarbon fragment, full in the organo-silicon compound can produce bond with the surface of the polymer material layer of lower floor, and the affinity of siliceous inorganic material layer that contains silicon fragment and upper strata is excellent, so strengthened the zygosity of siliceous inorganic material layer and polymer material layer, and prevented that siliceous inorganic material layer from producing peeling phenomenon.In addition, polymer material layer also can with layer of bonding material slaking simultaneously, with the number of times and the required time of reduction maturation stage.
Though the present invention with a preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (12)
1. the manufacture method of a low dielectric constant material layer is characterized in that: comprising:
One substrate is provided;
In this substrate, form a polymer material layer;
This polymer material layer of slaking;
Form a layer of bonding material on this polymer material layer, the principal component of this layer of bonding material is organo-silicon compound, and these organo-silicon compound have continuous one and contain silicon fragment and and satisfy and close hydrocarbon fragment;
This layer of bonding material of slaking makes the reaction of these organo-silicon compound and this polymer material layer and produces bond, makes this polymer material layer have one and contains silicon face.
2. the manufacture method of low dielectric constant material layer as claimed in claim 1 is characterized in that: wherein this layer of bonding material before the slaking is made up of a solvent of these organo-silicon compound and this macromolecular material of solubilized.
3. the manufacture method of low dielectric constant material layer as claimed in claim 1 is characterized in that: wherein this polymer material layer and this layer of bonding material slaking simultaneously.
4. the manufacture method of low dielectric constant material layer as claimed in claim 3 is characterized in that: wherein this polymer material layer fullly closes predecessor and is polymerized in maturing process by one.
5. the manufacture method of low dielectric constant material layer as claimed in claim 1 is characterized in that: wherein the method for this layer of bonding material of slaking comprises and adds the thermal maturation method.
6. the manufacture method of low dielectric constant material layer as claimed in claim 1, it is characterized in that: wherein the method for this layer of bonding material of slaking comprises ultraviolet light slaking method.
7. the manufacture method of low dielectric constant material layer as claimed in claim 1, it is characterized in that: wherein this contains silicon fragment and comprises the triethoxysilicane alkyl.
8. the manufacture method of low dielectric constant material layer as claimed in claim 1, it is characterized in that: wherein this contains silicon fragment and comprises the triacetoxysilane base.
9. the manufacture method of low dielectric constant material layer as claimed in claim 1 is characterized in that: wherein this fullly closes hydrocarbon fragment and comprises acrylic.
10. the manufacture method of low dielectric constant material layer as claimed in claim 1 is characterized in that: wherein this fullly closes hydrocarbon fragment and comprises a C
2～C
4α-acetenyl.
11. the manufacture method of low dielectric constant material layer as claimed in claim 10 also is included in and forms a siliceous inorganic dielectric layer on this layer of bonding material.
12. the manufacture method of the interlayer dielectric layer of low-k as claimed in claim 11 is characterized in that: wherein the material of this siliceous inorganic dielectric layer be silicon nitride and carborundum the two one of.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/886,769 US6599826B2 (en) | 2001-06-01 | 2001-06-19 | Method for fabricating a low dielectric constant material layer |
| US09/886769 | 2001-06-19 |
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| Publication Number | Publication Date |
|---|---|
| CN1409381A CN1409381A (en) | 2003-04-09 |
| CN100397591C true CN100397591C (en) | 2008-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021246084A Expired - Lifetime CN100397591C (en) | 2001-06-19 | 2002-06-19 | Method for producing low dielectric constant material layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1299358C (en) * | 2003-04-02 | 2007-02-07 | 联华电子股份有限公司 | Inlay metal inner connecting structure possessong double protective layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM485542U (en) * | 2013-10-18 | 2014-09-01 | Luxshare Ict Co Ltd | Electrical connector |
-
2002
- 2002-06-19 CN CNB021246084A patent/CN100397591C/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM485542U (en) * | 2013-10-18 | 2014-09-01 | Luxshare Ict Co Ltd | Electrical connector |
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