CN100397564C - Wafer laser marker method and its wafer - Google Patents
Wafer laser marker method and its wafer Download PDFInfo
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- CN100397564C CN100397564C CNB2005100935081A CN200510093508A CN100397564C CN 100397564 C CN100397564 C CN 100397564C CN B2005100935081 A CNB2005100935081 A CN B2005100935081A CN 200510093508 A CN200510093508 A CN 200510093508A CN 100397564 C CN100397564 C CN 100397564C
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- 239000003550 marker Substances 0.000 title claims description 58
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- 238000002372 labelling Methods 0.000 claims description 30
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- 235000012431 wafers Nutrition 0.000 description 139
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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Abstract
The invention relates to a laser mark method of crystal chip and relative crystal chip. Wherein, it comprises: providing a crystal chip on the transmission carrier, while its back contacts parallel the carrier; when there is laser mark, the laser passes the transparent carrier to emit the back of crystal, to form at least one laser mark. The inventive crystal has one active surface and one back surface, while the thickness between them is 1-12mil, and the back surface has at least one laser mark.
Description
Technical field
The present invention relates to a kind of laser marker method and wafer thereof of wafer, particularly relate to a kind of laser marker method and wafer thereof of wafer of the back side at the thinning wafer.
Background technology
Integrated circuit (IC) products is through the circuit aggregationization and is produced in a wafer (wafer) in a large number, cuts into individual die (die, or title wafer) again, for follow-up encapsulation or assembling operation.Because integrated circuit is of a great variety, make laser labelling (laser mark) at the back side of crystal grain so understand usually, the character of various letter or number for example is in order to being easy to identification wafer kenel or lot number.Correlation technique can be illustrated in No. the 395041st, TaiWan, China patent announcement " wafer of laser labelling ", and the front of a crystal grain (being active surface) is formed with a plurality of transistor elements, and the back side of crystal grain is formed with laser labelling, as crystal grain status identification effect.
At present the making of laser labelling is before wafer does not cut into crystal grain as yet, can be in a large number and form the laser labelling of all crystal grains in the wafer apace, but the difficulty of implementing and making is then arranged for the wafer of thinning.See also shown in Figure 1ly, a wafer 10 includes a plurality of crystal grain, and those crystal grain have other crystal grain back side 11, is positioned at the same surface of wafer 10.On each crystal grain back side 11, should be formed with a laser labelling 20.See also Fig. 2, when wafer 10 is carried out laser marker, must be complete and have the wafer 10 of suitable thickness can horizontal positioned and be fixed on the external member 30 (kit) of a laser marker equipment, external member 30 has an opening 31, to manifest those crystal grain back side 11, so can utilize 40 pairs of wafers 10 of a lasing light emitter to fuse above-mentioned laser labelling 20.Yet, when causing laser marker, have apart from burnt inaccurate offset and the clear problem of Marks Illegible when wafer 10 requires thinning and during brilliant back-grinding, in case thickness is too thin, the wafer 10 that is positioned on the external member 30 can produce warpages.Known wafer size is big more, thickness then must be thick more, silicon wafer warpage when preventing laser marker, for example the thickness of 8 inches wafers must be more than 6 mils (mil) (1mil=25.4 μ m), the thickness of 12 inches wafers must be more than 12 mils (mil), otherwise can't make accurate and correct laser labelling 20.
This shows that the laser marker method of above-mentioned existing wafer obviously still has inconvenience and defective, and demands urgently further being improved.The problem that exists for the laser marker method that solves wafer, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and conventional method does not have appropriate can addressing the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the laser marker method of above-mentioned existing wafer exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of laser marker method and wafer thereof of new wafer, can improve the laser marker method of general existing wafer, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is, overcome the defective of the laser marker method existence of existing wafer, and provide a kind of laser marker method of new wafer, technical problem to be solved is to make it form laser labelling on the wafer of a thinning (wafer thickness is between 1～12 mil), can solve the problem that the wafer of thinning can't laser marker, thereby be suitable for practicality more.
Another object of the present invention is to, a kind of laser marker method of wafer is provided, technical problem to be solved be make its wafer of guaranteeing thinning can warpage when laser marker, skew with shake, forming accurate and correct laser labelling, thereby be suitable for practicality more.
A further object of the present invention is, a kind of wafer is provided, and technical problem to be solved is to make it have laser labelling, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.The laser marker method of a kind of wafer that proposes according to the present invention, it may further comprise the steps: a wafer is provided, and this wafer has an active surface and a back side, and this wafer by this active surface to the thickness at this back side between 1～12 mil (mil); Place this wafer on a printing opacity support plate, wherein this back side of this wafer is this printing opacity support plate of smooth contact; And the step of carrying out a laser marker, laser shines in this wafer by this printing opacity support plate, forms at least one laser labelling at this back side of this wafer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The laser marker method of aforesaid wafer, wherein said printing opacity support plate has an air-breathing groove or a plurality of suction hole, in order to adsorb this periphery district of this wafer.
The laser marker method of aforesaid wafer, wherein said laser labelling correspondence is formed at those crystal grain back side.
The laser marker method of aforesaid wafer, wherein in the described step that this wafer is provided, this wafer is through brilliant back-grinding, to be controlled at the thickness of 1～12 mil (mil).
The laser marker method of aforesaid wafer, wherein in the step of described laser marker, this printing opacity support plate is fixed by the external member of a laser marker equipment.
The laser marker method of aforesaid wafer, the back side of wherein said wafer include the periphery district of a plurality of crystal grain back side and a no crystal grain.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of wafer that the present invention proposes, it has an active surface and a back side, and this wafer by this active surface to the thickness at this back side between 1～12 mil (mil), and form at least one laser labelling at this back side of this wafer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid wafer, this back side of wherein said wafer includes the periphery district of a plurality of crystal grain back side and a no crystal grain, and formed those laser labelling correspondences are formed at those crystal grain back side.
Aforesaid wafer, wherein said wafer are 12 inches wafers, and above-mentioned thickness is between 1～12 mil (mil).
Aforesaid wafer, wherein said wafer are 8 inches wafers, and above-mentioned thickness is between 1～6 mil (mil).
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows: the laser marker method of a kind of wafer of the present invention, one wafer is provided, and this wafer has an active surface and a back side, and this wafer by this active surface to the thickness at this back side between 1～12 mil (mil); Afterwards, place this wafer on a printing opacity support plate, wherein this printing opacity support plate of the smooth contact in this back side of this wafer; Carry out the step of a laser marker again, laser shines in this wafer by this printing opacity support plate, forms at least one laser labelling with the back side at this wafer.
By technique scheme, the laser marker method of wafer of the present invention and wafer thereof have following advantage at least:
The laser marker method of wafer of the present invention, it can form laser labelling on the wafer of a thinning (wafer thickness is between 1～12 mil), it is to utilize the placement of a printing opacity support plate as a wafer, and make this printing opacity support plate of the smooth contact in a back side of this wafer, when laser marker, laser shines this back side in this wafer by this printing opacity support plate, to form laser labelling, solve the problem that the wafer of existing known thinning can't laser marker, thereby be suitable for practicality more.
The laser marker method of wafer of the present invention, it can have an air-breathing groove or a plurality of suction hole for the printing opacity support plate of placing wafer when the laser marker, in order to adsorb a periphery district of this wafer, under the operation of not disturbing laser path, make wafer smooth, the wafer of guaranteeing thinning can warpage when laser marker, skew with shake, forming accurate and correct laser labelling, thereby be suitable for practicality more.
Wafer of the present invention, by its active surface to the thickness at the back side between 1～12 mil (mil), and form at least one laser labelling at the back side of this wafer, a kind of thinning wafer with laser labelling is provided, thereby is suitable for practicality more.
In sum, the invention relates to a kind of laser marker method and wafer thereof of wafer.This method comprises, provide a wafer to be positioned on the printing opacity support plate, and make this printing opacity support plate of the smooth contact in a back side of this wafer, when laser marker, laser shines this back side in this wafer by this printing opacity support plate, form at least one laser labelling, solve the problem that existing known thinning wafer can't laser marker.The wafer that the present invention proposes, it has an active surface and a back side, this wafer by this active surface to the thickness at this back side between 1～12 mil (mil), form at least one laser labelling at this back side of this wafer.It has above-mentioned many advantages and practical value, and in class methods, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on method or on the function, have large improvement technically, and produced handy and practical effect, and the laser marker method of more existing wafer has the multinomial effect of enhancement, thus be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the schematic rear view of existing known wafer.
Fig. 2 is the existing schematic cross-section of known wafer when laser marker.
Fig. 3 is according to a specific embodiment of the present invention, the schematic cross-section of the wafer that is provided.
Fig. 4 is according to a specific embodiment of the present invention, the schematic cross-section of this wafer after being placed on a printing opacity support plate.
Fig. 5 is according to a specific embodiment of the present invention, the schematic rear view of this wafer after being placed on a printing opacity support plate.
Fig. 6 is according to a specific embodiment of the present invention, the schematic cross-section of this wafer when laser marker.
10: wafer 11: the crystal grain back side
20: laser labelling 30: external member
31: opening 40: lasing light emitter
110: wafer 111: active surface
112: the back side 113: the crystal grain back side
114: periphery district 120: the printing opacity support plate
121: air-breathing groove 130: external member
131: opening 140: lasing light emitter
150: laser labelling
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, laser marker method and its embodiment of wafer, method, step, feature and the effect thereof of the wafer that foundation the present invention is proposed, describe in detail as after.
Seeing also shown in Figure 3ly, is according to a specific embodiment of the present invention, the schematic cross-section of the wafer that is provided.One wafer 110 at first is provided, and wafer 110 includes a plurality of crystal grain and has an active surface 111 and a back side 112.Corresponding each grained region is formed with various integrated circuit, weld pad and protective layer (not shown) on active surface 111.Please consult Fig. 3 and Fig. 5 again, the back side 112 of wafer 110 includes the periphery district 114 of a plurality of crystal grain back side 113 and a no crystal grain.And can be by a brilliant back-grinding step, the control wafer thickness makes wafer 110 that 112 thickness reaches wafer thinning, for high density wafer stacking, slim encapsulation or other purposes between 1～12 mil (mil) to the back side by active surface 111.Defining more specifically, when wafer 110 is 12 inches wafers, then the thickness of wafer 110 is between 1～12 mil (mil); When wafer 110 was 8 inches wafers, then the thickness of wafer 110 was between 1～6 mil (mil).
Afterwards, seeing also shown in Figure 4ly, is according to a specific embodiment of the present invention, the schematic cross-section of this wafer after being placed on a printing opacity support plate.Wafer 110 is positioned on the printing opacity support plate 120, and makes the back side 112 smooth contact printing opacity support plates 120 of wafer 110.In the present embodiment, printing opacity support plate 120 does not absorb the glass of laser energy and has a tabular surface for a kind of, also can supply laser penetration for carrying wafer 110 in the laser marker process.In addition, preferably, printing opacity support plate 120 has an air-breathing groove 121, and the back side 112 in order to absorption wafer 110 makes the wafer 110 smooth printing opacity support plates 120 that are fixed in, and can avoid warpage, skew and the vibrations of wafer 110 when laser marker.In different embodiment, also can substitute air-breathing groove 121 with a plurality of suction holes.Please consult Fig. 4 and shown in Figure 5 again, air-breathing groove 121 is formed on the appropriate location of printing opacity support plate 120, and can adsorb the periphery district 114 at the back side 112, makes wafer 110 more smooth and not slippages, does not also disturb the laser path that forms laser labelling.
Afterwards, seeing also shown in Figure 6ly, is according to a specific embodiment of the present invention, the schematic cross-section of this wafer when laser marker.In the step of carrying out a laser marker, the printing opacity support plate 120 of above-mentioned carrying wafer 110 is fixed in the external member 130 of a laser marker equipment, and external member 130 has one can be for the opening 131 of laser work, and the laser that is sent by a lasing light emitter 140 shines in wafer 110 by printing opacity support plate 120.This laser is the low-energy laser of wavelength between 200 to 850nm, for example this laser is the green laser (green laser) of wavelength about 532nm, can appropriateness fuse at this crystal grain back side 113, so can form a plurality of laser labellings 150 at the back side 120 of wafer 110, wherein formed those laser labelling 150 correspondences are formed at those crystal grain back side 113, in order to the crystal grain identification after the cutting.Therefore, utilize above-mentioned method, the wafer that can solve existing known thinning can't carry out to horizontal fixed the problem of laser marker.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (6)
1. the laser marker method of a wafer is characterized in that it may further comprise the steps:
One wafer is provided, and this wafer has an active surface and a back side, and this wafer by this active surface to the thickness at this back side between 1～12 mil;
Place this wafer on a printing opacity support plate, wherein this printing opacity support plate of the smooth contact in this back side of this wafer; And
Carry out the step of a laser marker, laser shines in this wafer by this printing opacity support plate, forms at least one laser labelling at this back side of this wafer.
2. the laser marker method of wafer according to claim 1 is characterized in that the back side of wherein said wafer includes the periphery district of a plurality of crystal grain back side and a no crystal grain.
3. the laser marker method of wafer according to claim 2 is characterized in that wherein said printing opacity support plate has an air-breathing groove or a plurality of suction hole, in order to adsorb this periphery district of this wafer.
4. the laser marker method of wafer according to claim 2 is characterized in that wherein said laser labelling correspondence is formed at those crystal grain back side.
5. the laser marker method of wafer according to claim 1 is characterized in that this wafer is through brilliant back-grinding, to be controlled at the thickness of 1～12 mil in the wherein said step that this wafer is provided.
6. the laser marker method of wafer according to claim 1 is characterized in that in the step of wherein said laser marker, and this printing opacity support plate is fixed by the external member of a laser marker equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100935081A CN100397564C (en) | 2005-08-26 | 2005-08-26 | Wafer laser marker method and its wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100935081A CN100397564C (en) | 2005-08-26 | 2005-08-26 | Wafer laser marker method and its wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1921066A CN1921066A (en) | 2007-02-28 |
| CN100397564C true CN100397564C (en) | 2008-06-25 |
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| CNB2005100935081A Expired - Fee Related CN100397564C (en) | 2005-08-26 | 2005-08-26 | Wafer laser marker method and its wafer |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5501938B2 (en) | 2009-12-24 | 2014-05-28 | 日東電工株式会社 | Flip chip type film for semiconductor backside |
| CN104280261A (en) * | 2013-07-08 | 2015-01-14 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of cross-sectional sample |
| CN105632945A (en) * | 2014-11-05 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing wafer back adhesive |
| CN109240038A (en) * | 2018-10-15 | 2019-01-18 | 上海华虹宏力半导体制造有限公司 | A kind of mask plate, wafer and its exposure method, packaging method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256578A (en) * | 1991-12-23 | 1993-10-26 | Motorola, Inc. | Integral semiconductor wafer map recording |
| CN1215226A (en) * | 1997-10-21 | 1999-04-28 | 研能科技股份有限公司 | Crystal wafer fixing device and method |
| US20030192866A1 (en) * | 2002-04-15 | 2003-10-16 | Eo Technics Co., Ltd. | Chip scale marker and making method |
| US20040101000A1 (en) * | 2002-11-27 | 2004-05-27 | Eo Technics Co., Ltd. | Laser system for dual wavelength and chip scale marker having the same |
-
2005
- 2005-08-26 CN CNB2005100935081A patent/CN100397564C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256578A (en) * | 1991-12-23 | 1993-10-26 | Motorola, Inc. | Integral semiconductor wafer map recording |
| CN1215226A (en) * | 1997-10-21 | 1999-04-28 | 研能科技股份有限公司 | Crystal wafer fixing device and method |
| US20030192866A1 (en) * | 2002-04-15 | 2003-10-16 | Eo Technics Co., Ltd. | Chip scale marker and making method |
| US20040101000A1 (en) * | 2002-11-27 | 2004-05-27 | Eo Technics Co., Ltd. | Laser system for dual wavelength and chip scale marker having the same |
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| CN1921066A (en) | 2007-02-28 |
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