CN100395793C - Organic electroluminescent display - Google Patents
Organic electroluminescent display Download PDFInfo
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- CN100395793C CN100395793C CNB2004100617239A CN200410061723A CN100395793C CN 100395793 C CN100395793 C CN 100395793C CN B2004100617239 A CNB2004100617239 A CN B2004100617239A CN 200410061723 A CN200410061723 A CN 200410061723A CN 100395793 C CN100395793 C CN 100395793C
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- display
- organic electroluminescence
- heat
- radiating piece
- organic electroluminescent
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- 239000000758 substrate Substances 0.000 claims description 32
- 238000005401 electroluminescence Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
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- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 238000001816 cooling Methods 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention provides an element of an organic electroluminescent display device, which comprises a base plate, a pixel array, a row of control circuits, an array of control circuits and at least one heat dissipation element, wherein the base plate comprises a display region and a peripheral region; the pixel array is arranged in the display region of the base plate; the row of the control circuits and the array of the control circuits are arranged in the peripheral region of the base plate; the heat dissipation element is arranged in the peripheral region of the base plate, and is coupled with the pixel array.
Description
Technical field
The present invention relates to a kind of organic electroluminescent (organic light emitting diode OLED) display, be particularly related to a kind of active organic electroluminescent (AM-OLED) display, the heat that active component produced can be derived the active organic electroluminescent display device effectively with radiating piece.
Background technology
In the middle of flat-panel screens,, make organic electroluminescent spare will become the optimal selection of flat-panel screens of future generation undoubtedly because organic electroluminescent spare has characteristics such as autoluminescence, high brightness, wide viewing angle, high response speed and manufacture craft be easy.
Organic Light Emitting Diode is for using the light emitting diode of organic layer as active layer (active layer), gradually, be used to flat panel display (flat panel display) in recent years, can divide into passive organic electroluminescent (PM-OLED) and active organic electroluminescent (AM-OLED) display according to type of drive.
The passive organic electroluminescent element is mainly driven merely via the XY matrix electrodes.Because the passive organic electroluminescent element is with linearity type of drive execution in regular turn, when scanning linear (scanning lines) increases to hundreds of when above, desired moment brightness (instantaneous brightness) is hundreds of times that observe brightness, therefore, the immediate current amount of generation is also up to hundreds of times.So big power consumption makes Organic Light Emitting Diode produce a large amount of heat, has improved the operating temperature of Organic Light Emitting Diode simultaneously.Yet the raising of operating temperature easily makes and thus, easily causes the reduction of the luminescence efficiency and the component life of organic electroluminescent device by speeding up of Organic Light Emitting Diode deterioration.
Developing the organic electroluminescent device with high-luminous-efficiency and long life is one of main trend of present plane display technique.Therefore, (thin film transistor, active organic electroluminescent element TFT) is suggested the collocation thin film transistor (TFT), with the problem of avoiding the passive organic electroluminescent element to be produced.Because the active organic electroluminescent display has the luminous feature of face, self luminous high-luminous-efficiency and low driving voltage advantages such as (driving voltage), and have wide viewing angle, high contrast, high response speed (high-response speed), reach characteristic such as full-colorization.Do bigger and bigger when the size of display, the requirement of resolution is more and more higher, and under the situation of full-colorization demand, active organic electroluminescent will become the optimal selection of full-colorization flat-panel screens of future generation undoubtedly.Though above-mentioned active organic electroluminescent element can significantly reduce the magnitude of current by Organic Light Emitting Diode, and then avoid the Organic Light Emitting Diode heat energy a large amount of because of power consumption produces.Yet, the active organic electroluminescent element with thin film transistor (TFT) as on-off element, a large amount of electric currents the flow through amorphous silicon layer or the polysilicon layer of film crystal tube passage (channel).Because the electric current that amorphous silicon layer or polysilicon layer semi-conductor layer, its resistance can cause flowing through produces power consumption and converts a large amount of heat to, make the operating temperature of active organic electroluminescent element increase.When operating temperature rises, for glass transition temperature (T
g) point is OLED material about 100 ℃, can find significantly that OLED voltage has sizable difference to the characteristic of brightness, and this characteristic also directly has influence on the serviceable life of OLED, that is to say, higher operating temperature can cause the degradation speed of Organic Light Emitting Diode to be accelerated.
Therefore, dissipate to the external world effectively for making active organic electroluminescent (AM-OLED) heat energy that display produced, United States Patent (USP) the 6th, 265 proposes a kind of heat abstractor of sandwich construction No. 820.In addition, United States Patent (USP) the 5th, 821, No. 692 propositions are a kind of makes the fin type radiator structure on the encapsulation housing, to promote radiating efficiency.Yet, no matter be to dispel the heat with which kind of cap, on the thickness and on the sealing strength certain limitation is being arranged all.For example, United States Patent (USP) the 6th, 265, the heat abstractor of No. 820 disclosed sandwich constructions certainly will increase panel component and take up space and be compressed to the shared space of other element in the system.In addition, United States Patent (USP) the 5th, 821, the fin type radiator structure of being mentioned for No. 692, the weak and institute of its structural strength takes up space big, and the thickness that not only influences panel also makes modular segment processing procedure assembling difficulty simultaneously.
Summary of the invention
Therefore, the present invention relates to the heat conduction and the heat abstractor of display of organic electroluminescence.In order to solve the heat dissipation problem of above-mentioned display of organic electroluminescence, the object of the present invention is to provide a kind of active organic electroluminescent display, the heat that active component produced can be derived outside the active organic electroluminescent display device effectively with radiating piece.
Another object of the present invention is to provide a kind of active organic electroluminescent display with radiating piece, radiating piece is arranged in the neighboring area of display of organic electroluminescence substrate, and the mat thermal conductive wire is connected with the organic electroluminescent pel array, the heat that active component produced can be derived the active organic electroluminescent display device effectively.
According to above-mentioned purpose, the invention provides a kind of display of organic electroluminescence element, comprising: a substrate, comprise a viewing area and a neighboring area, wherein the viewing area is positioned at the main region of substrate; One pel array is positioned at the viewing area; One line control circuit and an arrange control circuit are positioned at the neighboring area; And at least one radiating piece, be positioned at the neighboring area of substrate, couple with pel array.
According to above-mentioned purpose, the present invention also provides a kind of manufacture method of display of organic electroluminescence element, comprise the following steps: to provide a substrate, have an active device array of the main region that is positioned at substrate, and be positioned at a plurality of radiating pieces of the neighboring area of substrate; And corresponding active device array forms an organic LED array on substrate, to constitute the active organic electroluminescent pel array in main region; Wherein, when being formed with OLED, form many heat-conducting pieces that are connected with radiating piece.
According to above-mentioned purpose, the present invention also provides a kind of manufacture method of display of organic electroluminescence element, comprises the following steps: to provide a substrate, has an active device array of the main region that is positioned at substrate; And on substrate to should forming an organic LED array by active device array, to constitute the active organic electroluminescent pel array in main region; Wherein, forming a plurality of radiating pieces in the neighboring area of substrate when being formed with OLED is connected with heat-conducting piece and with organic LED array.
Following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the synoptic diagram that shows according to the active organic electroluminescent display with radiating piece of the embodiment of the invention; And
Fig. 2 is the diagrammatic cross-section of demonstration according to the active organic electroluminescent display picture element zone of the tool heat spreader structure of the embodiment of the invention.
Description of reference numerals:
100~display of organic electroluminescence; 110~substrate; 120~pel array; 130~line control circuit; 140~arrange control circuit; 160~radiating piece; 170~heat-conducting piece; 1201~pixel region; 210~thin film transistor (TFT); 250~Organic Light Emitting Diode; 220~grid; 230~gate dielectric; 240~passage; 242~one lightly-doped source/drain electrodes; 244~source territory; 235~interlayer dielectric layer; 245~protective seam; 260~source electrode lead; 270~drain conductors; 252~anode; 254~Organic Light Emitting Diode lamination; 256~negative electrode; 280~blanket layer; 290~heat radiation media; 300~heat radiation frame.
Embodiment
Embodiments of the invention are a kind of active organic electroluminescent displays with radiating piece, the heat that active component produced can be derived the active organic electroluminescent display device effectively.The display of organic electroluminescence element comprises a substrate, and it has a main region and a neighboring area; One pel array, it is positioned at the viewing area of substrate; One line control circuit and an arrange control circuit, it is positioned at the neighboring area of substrate; And at least one radiating piece, it is arranged at the neighboring area of substrate, is connected with pel array mat heat-conducting piece.Though the present invention is to be example with the active organic electroluminescent display device, yet, this is not that passive organic electroluminescent display device or other self-emitting display element also can be used the layout of heat-conducting piece of the present invention and radiating piece, reach preferred radiating effect in order to qualification the present invention.
Below be have the active organic electroluminescent display of radiating piece and a preferred embodiment of manufacture method thereof of the present invention, conjunction with figs. is described in detail as follows now.
See also Fig. 1, an active organic electroluminescent display 100 with radiating piece 160 comprises a pel array 120, and it is positioned at the main region of substrate 110; One line control circuit 130 and an arrange control circuit 140, it is positioned at the neighboring area of substrate 110; And at least one radiating piece 160, cooling pad for example, it is in the neighboring area of substrate 110, with pel array 120 by a heat-conducting piece 170, for example thermal conductive wire connects.
Active organic electroluminescent display 100 is large-sized display pannels, and for example area is greater than 7 inches, with the high brightness indicator of big current drives.Because as its driving element, can flow through as the amorphous silicon layer or the polysilicon layer of film crystal tube passage (channel) by a large amount of electric currents with thin film transistor (TFT) for active organic electroluminescent display 100.Because amorphous silicon layer or polysilicon layer are semi-conductor layer, the electric current that its resistance can cause flowing through produces power consumption and passes and change a large amount of heat into, makes the operating temperature of active organic electroluminescent element increase.According to a preferred implementation of the present invention, utilize the radiating piece 160 of substrate 110 neighboring areas, be connected by a heat-conducting piece 170 with pel array 120, can be with the heat that active component produced, derive the active organic electroluminescent display device effectively, to avoid Organic Light Emitting Diode because of the too high deterioration of operating temperature.
The radiating piece 160 that will be appreciated that substrate 110 neighboring areas is not the terminal point of entire heat dissipation path, and radiating piece 160 can dissipate heat to the external world by directly contacting with outside air.According to embodiments of the invention, also can be coated with the good heat radiation media 290 of a thermal conductivity (for example thermal paste) on radiating piece 160, or be connected to heat radiation frame 300.
Fig. 2 is the diagrammatic cross-section of demonstration according to the active organic electroluminescent display picture element zone of the tool heat spreader structure of the embodiment of the invention.Pixel region 1201 comprises a thin film transistor (TFT) 210 and an Organic Light Emitting Diode 250.Thin film transistor (TFT) 210 is preferably low-temperature polysilicon film transistor (LTPS-TFT), be formed on the substrate 110, comprise that a grid 220, a gate dielectric 230, a passage 240, lightly-doped source/drain electrode (LDD) 242 are in both sides, the source territory 244 of passage 240.Regions and source 244 is electrically connected with source electrode lead 260 and drain conductors 270 respectively, and 210 of source electrode lead 260 and drain conductors 270 and thin film transistor (TFT)s are isolated with an interlayer dielectric layer (ILD) 235.Source electrode lead 260 is connected to row control element 130 with the sweep trace of display, and drain conductors 270 is connected with the anode 252 of Organic Light Emitting Diode 250.
One protective seam 245 covers substrate 110 and thin film transistor (TFT) 210.Protective seam has an opening, and drain conductors 270 is electrically connected with the anode 252 of Organic Light Emitting Diode 250.
Organic Light Emitting Diode 250 comprises one first electrode 252, an organic electroluminescence lamination 254 and one second electrode 256, and wherein second electrode 256 of second electrode 256 of this each Organic Light Emitting Diode 250 and adjacent Organic Light Emitting Diode 250 interconnects and is connected to cooling pad 160 by thermal conductive wire 170.Organic Light Emitting Diode 250 is separated by with a separation layer (blank layer) 280 with 210 of the thin film transistor (TFT)s that links to each other.
Please refer to Fig. 2, a transparency conducting layer 252, promptly the anode 252 of Organic Light Emitting Diode 250 is formed on the protective seam 245.Transparency conducting layer 252 can be indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc paste (ZnO), and can be formed by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.
Then, be formed on the transparency electrode 252 to an organic electro luminescent layer 254 smooth property covered, and a metal electrode 256 is formed in this substrate 110 in regular turn.Transparency electrode 252, organic electro luminescent layer 254 and metal electrode 256 formed heaps are built structure and are constituted Organic Light Emitting Diode 250 of the present invention.Wherein, this organic organic electro luminescent layer 254 can be micromolecule or macromolecule electroluminescent organic material, and can be the Organic Light Emitting Diode material layer or the stacked formation of closing of multilayer electroluminescent organic material of individual layer.If the micromolecule electroluminescent organic material can utilize the vacuum evaporation mode to form; If the macromolecule electroluminescent organic material then can use modes such as rotary coating, ink-jet or screen painting to be formed with the OLED material layer.The material of metal electrode 256 can be selected from metal material or the composite material of Ca, Ag, Mg, Al, Li and other low work function (work function), and generation type can be vacuum thermal evaporation or sputtering way.
Form many heat-conducting pieces 170 in the same steps as that forms metal electrode 256, for example thermal conductive wire is connected to radiating piece 160.According to present embodiment, metal electrode 256, heat-conducting piece 170 and radiating piece 160 can form in same steps as.Second electrode 256 of second electrode 256 of each Organic Light Emitting Diode 250 and adjacent Organic Light Emitting Diode 250 interconnects and is connected to radiating piece 160 by heat-conducting piece 170.
As on-off element, can flow through as the polysilicon layer 240 of thin film transistor (TFT) 250 passages (channel) by a large amount of electric currents with thin film transistor (TFT) 250 for the active organic electroluminescent element.Because this polysilicon layer 240 is a semi-conductor layer, the electric current that its resistance can cause flowing through produces power consumption and converts a large amount of heat to, makes the operating temperature of active organic electroluminescent element increase.For the heat that active component produced, must conduct to the external world fast and effectively.Yet upwards and be all the relatively poor insulating structure of thermal conductivity downwards, be mainly monox (coefficient of heat conductivity K=10~20W/mK) or silicon nitride (coefficient of heat conductivity K=35W/mK).Upwards the terminal point that transmits is the negative electrode of organic electroluminescent device, and the terminal point that transmits downwards is glass substrate (coefficient of heat conductivity K=1.4~2W/mK).Negative electrode material commonly used is a metal, comprises Al, Al-Cu, Mg or Mg-Ag alloy, and its coefficient of heat conductivity K value is on the whole greater than 160W/mK, much larger than glass substrate coefficient of heat conductivity K value 1.4~2W/mK.Therefore, the heat that thin film transistor (TFT) produced can upwards be passed to the negative electrode of organic electroluminescent device.According to a preferred implementation of the present invention, in organic electroluminescence panel device substrate neighboring area a plurality of radiating pieces are set, and being connected to the negative electrode of organic electroluminescent device by heat-conducting piece, the heat energy that causes thin film transistor (TFT) to produce further is passed to the external world.The thickness of heat-conducting piece is preferably more than 100 dusts
On the whole width is 250 microns.
The radiating piece that is positioned at the substrate periphery zone can directly contact with external air, conducts to the external world via the air thermal convection.According to a preferred implementation of the present invention, can be coated with the good heat radiation media of a thermal conductivity, thermal paste for example, coefficient of heat conductivity K value is greater than 50W/mK.According to preferred implementation of the present invention, utilize the radiating piece in substrate periphery zone and the radiating efficiency 5~8% that heat-conducting piece can increase panel integral body.
Feature of the present invention and effect are to utilize the radiating piece of active organic electroluminescent display base plate neighboring area, the thermal conductance that active component produced can be gone out outside the active organic electroluminescent display device.Make the heat that this thin film transistor (TFT) produced upwards to be passed to the negative electrode of organic electroluminescent device, and then be passed to the external world, to solve problem because of the Organic Light Emitting Diode deterioration that heat energy was caused that thin film transistor (TFT) was produced.
Though the present invention with preferred embodiment openly as above; yet; it is not in order to limit the present invention; those skilled in the art; under the premise without departing from the spirit and scope of the present invention; certainly can do to change and retouching, so protection scope of the present invention should be as the criterion with appended claims.
Claims (9)
1. display of organic electroluminescence element comprises:
One substrate comprises a viewing area and a neighboring area, and wherein said viewing area is positioned at a main region of described substrate;
One pel array is positioned at described viewing area;
One line control circuit and an arrange control circuit are positioned at described neighboring area; And
At least one radiating piece is located at described neighboring area, couples with described pel array.
2. display of organic electroluminescence element as claimed in claim 1, wherein said pel array are active organic electroluminescent pel arrays.
3. display of organic electroluminescence element as claimed in claim 2, wherein said pel array
Comprise:
One thin film transistor (TFT) array; And
One organic LED array comprises one first electrode, an organic electroluminescence lamination and one second electrode, and wherein said second electrode is coupled to described radiating piece by a heat-conducting piece.
4. display of organic electroluminescence element as claimed in claim 3, the heat that wherein said thin film transistor (TFT) array generated conducts to described radiating piece via described second electrode.
5. display of organic electroluminescence element as claimed in claim 1, the coefficient of heat conductivity of wherein said radiating piece is greater than 50W/mK.
6. display of organic electroluminescence element as claimed in claim 1, wherein said radiating piece are metal.
7. display of organic electroluminescence element as claimed in claim 6, wherein said radiating piece material comprises Al, Al-Cu alloy, Mg or Mg-Ag alloy.
8. display of organic electroluminescence element as claimed in claim 1 comprises also that wherein one is covered in the heat radiation media on the described radiating piece.
9. display of organic electroluminescence element as claimed in claim 1 wherein also comprises a heat radiation frame that couples with described radiating piece.
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CNB2004100617239A CN100395793C (en) | 2004-07-01 | 2004-07-01 | Organic electroluminescent display |
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Citations (2)
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US20020196213A1 (en) * | 2001-06-21 | 2002-12-26 | Hajime Akimoto | Image display |
CN1419150A (en) * | 2002-12-27 | 2003-05-21 | 李志平 | Outdoor ultralarge screen digital display |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20020196213A1 (en) * | 2001-06-21 | 2002-12-26 | Hajime Akimoto | Image display |
CN1419150A (en) * | 2002-12-27 | 2003-05-21 | 李志平 | Outdoor ultralarge screen digital display |
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