CN100394612C - Top light-emitting type active organic display element and method for manufacturing same - Google Patents
Top light-emitting type active organic display element and method for manufacturing same Download PDFInfo
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- CN100394612C CN100394612C CNB031046134A CN03104613A CN100394612C CN 100394612 C CN100394612 C CN 100394612C CN B031046134 A CNB031046134 A CN B031046134A CN 03104613 A CN03104613 A CN 03104613A CN 100394612 C CN100394612 C CN 100394612C
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Abstract
The present invention relates to an active type organic light-emitting display element with a light emitting type top. The bottom of an anode layer of the element is assembled with a metal shielding layer in order to avoid the state of photoelectric electricity leakage caused by light ray which is generated by an organic light-emitting layer and is radiated into a passage layer of a thin-film transistor. Because the metal shielding layer can prevent the light ray from being radiated into the passage layer of the thin-film transistor, the anode layer can extend to cover the upper part of the thin-film transistor following the metal shielding layer in order to increase the light-emitting area of a pixel structure; in addition, because the electric conductive performance of the metal shielding layer is more ideal than that of the anode layer, the metal shielding layer can also improve the uniformity of current simultaneously so as to promote the service life of the element.
Description
Technical field
The invention relates to a kind of organic illuminated display element and manufacture method thereof, and particularly relevant for a kind of top emission type active organic light-emitting display element and manufacture method thereof.
Background technology
Organic illuminated display element is a kind of semiconductor element that converts electric energy to luminous energy and have high conversion efficiency, and common purposes is light-emitting component of indicator light, display floater and optical read/write head or the like.Because organic illuminated display element possesses some characteristics, as no visual angle, simple and easy, low-cost, the high answer speed of technology, serviceability temperature is in extensive range and full-colorization etc., meets the requirement of multimedia era display characteristics, has become the upsurge of research in recent years.
In positive development, it is to form an organic luminous layer and a cathode layer on a substrate that is formed with thin film transistor (TFT) array to a kind of now active organic light-emitting display element, and constitutes an active organic light-emitting display element.Therefore the active organic light-emitting display element utilizes thin-film transistor with the driven for emitting lights display element.
Usually the active organic light-emitting display element is bottom-emission type (Bottom Emission).Because its anode layer is a transparent material, and its cathode layer is the non-transparent metals material, so the light that organic luminous layer produced can be given out light to the element bottom.And in this kind element, the grid of its thin-film transistor can intercept extraneous light and inject its channel layer by substrate back usually, takes place with the situation of avoiding photoelectricity electric leakage (Photoelectric Current Leakage).But in order to prevent that light that its organic luminous layer produces from can inject the channel layer of thin-film transistor, the anode layer of active organic light-emitting display element must corresponding thin-film transistor configuration, and in other words, anode layer can not cover the top of thin-film transistor.Therefore the light-emitting area of each dot structure will be restricted.
Yet even defined anode layer does not cover the top of thin-film transistor, but the light that organic luminous layer produced still may cause the situation of photoelectricity electric leakage because of scattering process arrives in the channel layer.
And above-mentioned a variety of causes causes element photoelectricity when electric leakage, will make the element operation electric current produce drift, can influence the performance of element GTG simultaneously, and reduce contrast.And when produce photoelectricity when electric leakage because of photoelectric effect, along with the element growth of service time, the electric current of element operation can promote gradually, thus, except meeting makes power consumption increases, also can cause harmful effect for the life-span of element.
Summary of the invention
Therefore purpose of the present invention just provides a kind of top emission type active organic light-emitting display element and manufacture method thereof, to solve the situation that known active organic light-emitting display element has photo leakage current.
A further object of the present invention provides a kind of top emission type active organic light-emitting display element and manufacture method thereof, improving the electric current uniformity of element, and then improves its life-span.
The present invention proposes a kind of top emission type active organic light-emitting display element, and it comprises a thin film transistor (TFT) array, a protective layer, a shielding layer, an anode layer, an organic luminous layer and a transparent cathode layer.Wherein, thin film transistor (TFT) array is disposed on the substrate, and wherein thin film transistor (TFT) array comprises a plurality of thin-film transistors, plurality of scanning wirings and many data wirings.Protective layer is configured on the substrate, covers thin film transistor (TFT) array.In the present invention, protective layer can be the dielectric material that has the photoresist layer of flat surfaces or have flat surfaces, can also be silicon nitride layer or silicon oxide layer.And shielding layer is configured on the substrate, covers protective layer, and wherein shielding layer and thin-film transistor electrically connect.In the present invention, the material of shielding layer can be can be with the conductive material of light reflection, and it comprises aluminium (Al), chromium (Cr) or molybdenum (Mo), and the material of shielding layer can also be can light-absorbing conductive material, and it comprises zinc oxide (ZnO
x), zinc sulphide (ZnS), germanium (Ge), cadmium telluride (CdTe), cadmium selenide (CdSe), antimony trisulfide (Sb
2S
3), germanium nitride (GeN), praseodymium oxide manganese (PrMnO
3) or the mixture (Cr+CrO of chromium and chromium oxide
x).The anode series of strata are configured on the surface of shielding layer, and wherein the pattern of anode layer is identical with the pattern of shielding layer.And organic luminous layer is configured on the anode layer, and the transparent cathode layer then is to be configured on the organic luminous layer.
The present invention proposes a kind of manufacture method of top emission type active organic light-emitting display element, the method at first forms a thin film transistor (TFT) array on a substrate, wherein this thin film transistor (TFT) array comprises a plurality of thin-film transistors, plurality of scanning wirings and many data wirings.Then; above substrate, form a protective layer; cover thin film transistor (TFT) array, wherein protective layer for example is with formed planarization photoresist layer of a method of spin coating or planarization dielectric material, and protective layer can also be with formed silicon nitride layer of chemical vapour deposition technique or silicon oxide layer.Afterwards, form a shielding layer on protective layer, wherein shielding layer and thin-film transistor electrically connect.In the present invention, the material of shielding layer can be can be with the conductive material of light reflection, it comprises aluminium, chromium or molybdenum, the material of shielding layer also can be can light-absorbing conductive material, and it comprises the mixture of zinc oxide, zinc sulphide, germanium, cadmium telluride, cadmium selenide, antimony trisulfide, germanium nitride, praseodymium oxide manganese or chromium and chromium oxide.Subsequently, form an anode layer on the surface of shielding layer, wherein anode layer is defined with mutually same light shield with shielding layer.On anode layer, form an organic luminous layer afterwards again, and on organic luminous layer, form a transparent cathode layer, to constitute a top emission type active organic light-emitting display element.
Because top emission type active organic light-emitting display element of the present invention has a shielding layer in the beneath design of anode layer, can prevent that therefore the light that organic luminous layer produces from injecting in the channel layer of thin-film transistor, and cause the situation of photoelectricity electric leakage.
Also because the design of this shielding layer, so anode layer can be along with the extension of shielding layer, and covers the top to thin-film transistor, so as to improving the light-emitting area of each dot structure.
And, good because of the conductivity of metal shielding layer than anode layer, therefore come conduction current by shielding layer, electric current uniformity is promoted, show the uniformity and improve, and then improve the life-span of element.
Description of drawings
Figure 1A is the vertical view according to the top emission type active organic light-emitting display element of a preferred embodiment of the present invention;
Figure 1B is the generalized section according to the top emission type active organic light-emitting display element of a preferred embodiment of the present invention, and it is the generalized section of Figure 1A by I-I ';
Fig. 2 A is the vertical view according to the top emission type active organic light-emitting display element of another preferred embodiment of the present invention; And
Fig. 2 B is the generalized section according to the top emission type active organic light-emitting display element of another preferred embodiment of the present invention, and it is the generalized section of Fig. 2 A by II-II '.
100: substrate
102: metal wiring
104: grid
106: bottom electrode
108a/108b, 110a/110b: source/drain
109,111: channel layer
113: ohmic contact layer
112,114,118: contact hole
120: gate dielectric layer
122,132: protective layer
123: shielding layer
124: anode layer
126: organic luminous layer
128: cathode layer
130: switch element
140: driving element
SL: scan wiring
DL: data wiring
Embodiment
Shown in Figure 1A, it is the schematic top plan view according to the top emission type active organic light-emitting display element of a preferred embodiment of the present invention; Figure 1B is the generalized section of Figure 1A by I-I '.Top emission type active organic light-emitting element of the present invention is made of a plurality of dot structures that are arrayed, in following explanation and icon, is to be that example is to describe it in detail with a dot structure wherein.
Please refer to Figure 1A and Figure 1B, at first on substrate 100, form the bottom electrode 106 of scan wiring SL, metal wiring 102, grid 104 and reservior capacitor, to constitute the first metal layer (M1).
Then, form gate dielectric layer 120 on substrate 100, cover the first metal layer, the material of gate dielectric layer 120 for example is silicon nitride or silica.Subsequently, form opening 112,114 in gate dielectric layer 120, opening 112,114 exposes grid 104 and metal wiring 102 respectively.Afterwards, form channel layer 109,111 on gate dielectric layer 120, wherein channel layer 109 is formed on the top of part scan wiring SL (predetermined usefulness as grid), and channel layer 111 is formed on the grid 104.
Afterwards, on channel layer 109,111, form source 108a/108b, 110a/110b, and on gate dielectric layer 120, form the data wiring DL that electrically connects with source electrode 108a, to constitute second metal level (M2).Wherein, drain electrode 108b electrically connects with grid 104 by opening 112, and source electrode 110a electrically connects with metal wiring 102 by opening 114.In addition, drain electrode 108b is formed on the top of bottom electrode 106, and the 108b that therefore drains is simultaneously again as the top electrode of reservior capacitor, and the gate dielectric layer 120 between top electrode 108b and the bottom electrode 106 is then as a capacitance dielectric layer.
In the present embodiment, between source/drain 108a/108b, 110a/110b and channel layer 109,111, more comprise being formed with an ohmic contact layer 113, in order to improve electrical contact the between source/drain 108a/108b, 110a/110b and the channel layer 109,111.Therefore, part scan wiring SL part, source/drain 108a/108b, channel layer 109 and the ohmic contact layer 113 used as grid constitute a thin-film transistor 130, and it is as the usefulness of a switch element.And grid 102, source/drain 110a/110b channel layer 111 and ohmic contact layer 113 constitute another thin-film transistor 140, and it is as the usefulness of a driving element.
Afterwards, on substrate 100, define a protective layer 122, cover above-mentioned formed structure, and expose the drain electrode 110b of thin-film transistor 140.Wherein protective layer 122 for example is with the formed silicon nitride layer of chemical vapour deposition technique, silicon oxide layer or other dielectric layer that is suitable for.
Afterwards; on protective layer 122, define a shielding layer 123; wherein shielding layer 123 electrically connects with the drain electrode 110b that exposes; and shielding layer 123 more extends to the top of thin-film transistor 130,140; even can extend to the top of scan wiring SL and data wiring DL, as long as the shielding layer 123 in each dot structure does not link together each other.In the present embodiment, the material of shielding layer 123 can be a conductive material that light can be reflected (material that light can be reflected), and it comprises aluminium, chromium or molybdenum.The material of shielding layer 123 can also be can light-absorbing conductive material (can light absorbing material), and it comprises the mixture of zinc oxide, zinc sulphide, germanium, cadmium telluride, cadmium selenide, antimony trisulfide, germanium nitride, praseodymium oxide manganese or chromium and chromium oxide.
After forming shielding layer 123, on the surface of shielding layer 123, form an anode layer 124, employed mask pattern is identical with definition shielding layer 123 employed mask pattern when wherein defining anode layer 124, and in other words, the pattern of anode layer 124 is identical with the pattern of shielding layer 123.Therefore, the 123 definition steps of the shielding layer before forming anode layer 124 do not need additionally to re-use another road light shield again.In the present embodiment, the material of anode layer 124 for example is tin indium oxide or indium zinc oxide.
Then, on anode layer 124, form an organic luminous layer 126, on organic luminous layer 126, form a transparent cathode layer 128 again.Aluminium=10: 1) or lithium fluoride wherein, the material of transparent cathode layer 128 for example is the alloy (magnesium: of magnesium and aluminium.In order to improve the conductivity of transparent cathode layer 128, can arrange in pairs or groups tin indium oxide or indium zinc oxide in transparent cathode layer 128.
When element in when operation, the electronics that anode layer 124 and transparent cathode layer 128 are produced and electric hole just can make the organic luminous layer 126 generations mechanism of giving out light after organic luminous layer 126 combines.Because transparent cathode layer 128 is a light-transmitting materials, therefore the light that is produced can penetrate from the direction at element top.And because of shielding layer 123 can or absorb the light reflection, so light can not penetrate from the direction of element bottom.
Because the present invention is formed with shielding layer 123 under anode layer 124, can prevents that therefore the light that organic luminous layer 126 is produced from injecting in the channel layer 109,111 of thin-film transistor 130,140, and cause the situation of photoelectricity electric leakage.Particularly, because of the capture-effect of shielding layer 123, anode layer 124 can extend to the top of thin-film transistor 130,140 with the overlay area of shielding layer 123, so as to increasing the light-emitting area of each dot structure.In addition, because the material of anode layer 124 typically uses tin indium oxide or indium zinc oxide, its conductivity is generally low than metal material, therefore formed metal shielding layer 123 can also provide preferable conductivity under anode layer 124, electrical connection by metal shielding layer 123 and drain electrode 110b comes delivered current, with the uniformity (show uniformity) of lifting electric current, and the life-span of improving the characteristic of element and improving element.
The embodiment of the another kind of top emission type active organic light-emitting of the present invention display element is shown in Fig. 2 A and Fig. 2 B, and wherein Fig. 2 B is by the generalized section of II-II ' among Fig. 2 A.
Please refer to Fig. 2 A and Fig. 2 B, the unique part inequality of this embodiment and the foregoing description is that the mode of the protective layer 132 that forms is inequality.In the present embodiment, protective layer 132 is formed with method of spin coating, so these protective layer 132 thickness are thicker, and has a smooth surface.At this, the material of protective layer 132 can be resistance material or dielectric material.After forming protective layer 132, can electrically connect with drain electrode 110b in order to make follow-up formed shielding layer, therefore can expose drain electrode 110b prior to forming opening 118 in the protective layer 132.Afterwards, define shielding layer 123 again on protective layer 132, wherein the material of shielding layer 123 can be inserted in the opening 118 simultaneously, and forms a metal plug structure.By this metal plug structure shielding layer 123 can be electrically connected with drain electrode 110b.The material of shielding layer 123 is identical with previous described embodiment.
Then, form anode layer 124, organic luminous layer 126 and transparent cathode layer 128 more in regular turn.The mode of its formation is all identical with previous described embodiment with material.
Top emission type active organic light-emitting display element of the present invention is made of a plurality of dot structures that are arrayed, and wherein each dot structure comprises one scan wiring SL, a data wiring DL, a switch element 130, a driving element 140, a distribution 102, a protective layer 122 (or 132), a shielding layer 123, an anode layer 124, an organic luminous layer 126 and a transparent cathode layer 128.
Wherein, scan wiring SL is configured on the substrate 100.Data wiring DL is configured on the substrate 100, and the bearing of trend of data wiring DL is different with the bearing of trend of scan wiring SL.
In addition, switch element 130 is configured on the substrate 100, and wherein switch element 130 electrically connects with scan wiring SL and data wiring DL.In the present embodiment, switch element 130 is a thin-film transistor, and it comprises grid, channel layer 109 and source/drain 108a/108b, and grid is the part of scan wiring SL, and source electrode 108a is connected with data wiring SL.
In addition, distribution 102 is configured on the substrate 100, and wherein the bearing of trend of distribution 102 is identical with scan wiring SL, and is electrically connected to each other by contact hole 114 between the source electrode 110a of distribution 102 and driving element 140.
In a preferred embodiment, protective layer 122 is configured in (shown in Figure 1B) on the substrate 100, covers scan wiring SL, data wiring DL, switch element 130, driving element 140 and distribution 102.At this, protective layer 122 is a silicon nitride layer or one silica layer, and protective layer 122 exposes the drain electrode 110b of driving element 140.
In another preferred embodiment, protective layer 132 is configured in (shown in Fig. 2 B) on the substrate 100, covers scan wiring SL, data wiring DL, switch element 130, driving element 140 and distribution 102.At this, protective layer 132 is the photoresist layer of a planarization or the dielectric materials layer of a planarization.
And shielding layer 123 is configured on the substrate 100, covers protective layer 122 (or protective layer 132).In a preferred embodiment, the mode that the drain electrode 110b of shielding layer 123 and driving element electrically connects is that shielding layer 123 directly electrically contacts (shown in Figure 1B) with the drain electrode 110b that protected seam 122 exposes.Add among the embodiment at another, the mode that the drain electrode 110b of shielding layer 123 and driving element electrically connects is configuration one metal plug 118 in protective layer 132, makes shielding layer 123 and drain electrode 110b electric connection (shown in Fig. 2 B) by metal plug 118.Particularly, shielding layer 123 extends to the top of switch element 130 and driving element 140, and switch element 130 and driving element 140 are covered in.The material of shielding layer 123 can be can be with the conductive material of light reflection or can light-absorbing conductive material.
Because top emission type active organic light-emitting display element of the present invention has a shielding layer in the beneath design of anode layer, can prevent that therefore the light that organic luminous layer produces from injecting in the channel layer of thin-film transistor, and cause the situation of photoelectricity electric leakage.
Also because the design of this shielding layer, so anode layer can extend and cover top to thin-film transistor along with shielding layer, so as to improving the light-emitting area of each dot structure.
And, good because of the conductivity of metal shielding layer than anode layer, therefore come conduction current by shielding layer, electric current uniformity is promoted, show the uniformity and improve, and then improve the life-span of element.
Claims (22)
1. top emission type active organic light-emitting display element is characterized in that it comprises:
One thin film transistor (TFT) array is disposed on the substrate, and wherein this thin film transistor (TFT) array comprises a plurality of thin-film transistors, plurality of scanning wirings and many data wirings;
One protective layer is configured on this substrate, covers this thin film transistor (TFT) array;
One shielding layer is configured on this substrate, covers this protective layer, and wherein this shielding layer and those thin-film transistors electrically connect;
One anode layer is configured on the surface of this shielding layer;
One organic luminous layer is configured on this anode layer; And
One transparent cathode layer is configured on this organic luminous layer.
2. top emission type active organic light-emitting display element as claimed in claim 1 is characterized in that the pattern of this shielding layer is identical with the pattern of this anode layer.
3. top emission type active organic light-emitting display element as claimed in claim 1 is characterized in that, the material of this shielding layer is a conductive material that light can be reflected.
4. top emission type active organic light-emitting display element as claimed in claim 3 is characterized in that, this can comprise aluminium, chromium or molybdenum with the conductive material of light reflection.
5. top emission type active organic light-emitting display element as claimed in claim 1 is characterized in that, the material of this shielding layer is one can light-absorbing conductive material.
6. top emission type active organic light-emitting display element as claimed in claim 5, it is characterized in that this can light-absorbing conductive material comprise zinc oxide, zinc sulphide, germanium, cadmium telluride, cadmium selenide, antimony trisulfide, germanium nitride, praseodymium oxide manganese, chromium or chromium oxide.
7. top emission type active organic light-emitting display element as claimed in claim 1 is characterized in that the material of this transparent cathode layer comprises the alloy or the lithium fluoride of magnesium and aluminium.
8. top emission type active organic light-emitting display element as claimed in claim 7 is characterized in that, comprises tin indium oxide or indium zinc oxide in this transparency conducting layer, to increase its conductivity.
9. top emission type active organic light-emitting display element as claimed in claim 1 is characterized in that, this protective layer is the dielectric materials layer that a photoresist layer or with flat surfaces has flat surfaces.
10. top emission type active organic light-emitting display element as claimed in claim 1 is characterized in that this protective layer is a silicon nitride layer or one silica layer.
11. top emission type active organic light-emitting display element as claimed in claim 1, it is characterized in that, those thin-film transistors comprise the thin-film transistor of a plurality of driving usefulness and the thin-film transistor that a plurality of switch is used, and the thin-film transistor that this shielding layer and those drive usefulness electrically connects.
12. the manufacture method of a top emission type active organic light-emitting display element is characterized in that, this method comprises:
Form a thin film transistor (TFT) array on a substrate, wherein this thin film transistor (TFT) array comprises a plurality of thin-film transistors, plurality of scanning wirings and many data wirings;
Above this substrate, form a protective layer, cover this thin film transistor (TFT) array;
Form a shielding layer on this protective layer, wherein this shielding layer and those thin-film transistors electrically connect;
On the surface of this shielding layer, form an anode layer;
On this anode layer, form an organic luminous layer; And
On this organic luminous layer, form a transparent cathode layer.
13. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12 is characterized in that, this shielding layer is to adopt mutually same mask pattern to define with this anode layer.
14. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12 is characterized in that, the material of this shielding layer is a conductive material that light can be reflected.
15. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 14 is characterized in that, this can comprise aluminium, chromium or molybdenum with the conductive material of light reflection.
16. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12 is characterized in that, the material of this shielding layer is one can light-absorbing conductive material.
17. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 16, it is characterized in that this can light-absorbing conductive material comprise zinc oxide, zinc sulphide, germanium, cadmium telluride, cadmium selenide, antimony trisulfide, germanium nitride, praseodymium oxide manganese, chromium or chromium oxide.
18. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12 is characterized in that, the material of this transparent cathode layer comprises the alloy or the lithium fluoride of magnesium and aluminium.
19. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 18 is characterized in that, also comprises tin indium oxide or indium zinc oxide in this transparency conducting layer, to increase its conductivity.
20. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12 is characterized in that, this protective layer is that a dielectric materials layer or is with the formed photoresist layer with flat surfaces of method of spin coating.
21. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12 is characterized in that, this protective layer is with formed silicon nitride layer of chemical vapour deposition (CVD) or one silica layer.
22. the manufacture method of top emission type active organic light-emitting display element as claimed in claim 12, it is characterized in that, formed those thin-film transistors comprise the thin-film transistor of a plurality of driving usefulness and the thin-film transistor that a plurality of switch is used, and the thin-film transistor that this shielding layer and those drive usefulness electrically connects.
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| CNB031046134A CN100394612C (en) | 2003-02-17 | 2003-02-17 | Top light-emitting type active organic display element and method for manufacturing same |
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| CNB031046134A CN100394612C (en) | 2003-02-17 | 2003-02-17 | Top light-emitting type active organic display element and method for manufacturing same |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100433361C (en) * | 2006-07-10 | 2008-11-12 | 友达光电股份有限公司 | Organic electroluminescence structure |
| CN101789443B (en) * | 2010-03-08 | 2011-09-21 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof and manufacturing method of electronic device |
| CN103915466B (en) * | 2013-01-15 | 2017-03-01 | 厦门天马微电子有限公司 | Active matrix organic LED panel and its manufacture method |
| CN103324362A (en) * | 2013-07-09 | 2013-09-25 | 合肥京东方光电科技有限公司 | Array substrate, optical touch screen and display device |
| CN109461763B (en) * | 2018-10-17 | 2021-04-27 | Tcl华星光电技术有限公司 | Preparation method of display panel and display panel |
| CN110047904B (en) * | 2019-04-30 | 2021-07-23 | Tcl华星光电技术有限公司 | OLED display panel and electronic equipment |
| WO2021189304A1 (en) | 2020-03-25 | 2021-09-30 | 京东方科技集团股份有限公司 | Display substrate and display device |
| EP4131401A4 (en) * | 2020-03-25 | 2023-05-03 | BOE Technology Group Co., Ltd. | Display substrate and display device |
| CN113811812B (en) | 2020-03-25 | 2023-01-13 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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| JP2001057474A (en) * | 1999-08-19 | 2001-02-27 | Auto Network Gijutsu Kenkyusho:Kk | Organic el displaying device |
| CN1334483A (en) * | 2000-07-26 | 2002-02-06 | 精工爱普生株式会社 | Electrooptical device, base plate for electrooptical device and projection type display device |
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2003
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001057474A (en) * | 1999-08-19 | 2001-02-27 | Auto Network Gijutsu Kenkyusho:Kk | Organic el displaying device |
| CN1334483A (en) * | 2000-07-26 | 2002-02-06 | 精工爱普生株式会社 | Electrooptical device, base plate for electrooptical device and projection type display device |
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