CN100394345C - Voltage generator and method for generating stabilized voltage - Google Patents
Voltage generator and method for generating stabilized voltage Download PDFInfo
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- CN100394345C CN100394345C CNB2004100286560A CN200410028656A CN100394345C CN 100394345 C CN100394345 C CN 100394345C CN B2004100286560 A CNB2004100286560 A CN B2004100286560A CN 200410028656 A CN200410028656 A CN 200410028656A CN 100394345 C CN100394345 C CN 100394345C
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Abstract
The present invention relates to a voltage generator for generating stable voltage, which comprises a bleeder circuit, a first differential amplifier, a second differential amplifier, a first switcher and a second switcher. When first input voltage is lower than reference input voltage, a first input voltage signal is in the state of high potential so that the voltage output by the generator is increased; when second input voltage is higher than reference input voltage, a second output voltage signal is in the state of high potential so that the voltage output by the generator is reduced. Thereby, the voltage output by the generator is stable voltage in essence.
Description
[technical field]
The invention relates to a kind of voltage generator and the method that a burning voltage is provided, and particularly relevant for a kind of voltage generator of a burning voltage and method that this burning voltage is provided of in integrated circuit, producing.
[background technology]
In the middle of general circuit, various electronic components must be in suitable bias state, can make electronic component produce due function.For example a transistor when being used in enlarging function, must operate in linear zone.One suitable bias voltage is provided, need possesses a stable voltage source or current source.
Recently owing to the development of electronics industry, the integrated circuit that can hold a large amount of crystal is more and more general.Along with the progress of step technique, the size of the electronic component in the integrated circuit is also more and more littler.When the size decreases of electronic component, the needed bias value of electronic component also diminishes.Therefore, producing its output voltage values of voltage generation circuit of fixed voltage source and the amplitude of change in voltage must change along with the size of step technique and electronic component.This voltage generation circuit is not only wanted to produce required magnitude of voltage, and it is accurate a stable position to want to keep output voltage, and the electronic component in the integrated circuit is operated on the correct operating point.
So, how in an integrated circuit, make a steady voltage source that meets small size electronic component bias requirement, and adjust the magnitude of voltage of output voltage dexterously, be that industry member presses for very much.
[summary of the invention]
The objective of the invention is can provide a voltage source in that a kind of voltage generator is provided.
Another object of the present invention is that a kind of voltage generator is being provided, this voltage generator can be set one first input voltage, one second input voltage and a reference input voltage, makes the generator output voltage provide a steady voltage source in a scope of fixing.
A further object of the present invention is that a kind of voltage generator is being provided, be used for a storage arrangement presintering test circuit, can provide bit line pre-charge voltage and capacitor board voltage at normal mode, when the burn-in testing pattern, can close.
According to purpose of the present invention, a kind of voltage generator is proposed, be used to produce a stable in fact voltage.This voltage generator comprises a bleeder circuit, one first differential amplifier, one second differential amplifier, one first switch and one second switch.
Bleeder circuit produces one first input voltage and one second input voltage according to one with reference to a high voltage and a generator output voltage.Wherein be higher than first input voltage with reference to high voltage, first input voltage is higher than second input voltage, and second input voltage is higher than the generator output voltage.
First differential amplifier produces first output voltage signal according to a reference input voltage and first input voltage.Second differential amplifier produces one second output voltage signal according to the reference input voltage and second input voltage.
When first output voltage signal was noble potential, first switch provided a high voltage source to the generator output voltage.When second output voltage signal was noble potential, second switch provided a low-voltage source to the generator output voltage.
Wherein when first input voltage was lower than reference input voltage, first output voltage signal is in high potential state made this generator output voltage increase.When second input voltage was higher than reference input voltage, second output voltage signal is in high potential state made the generator output voltage reduce.
According to purpose of the present invention, a kind of stable in fact voltage method that produces is also proposed, the method comprises the following steps.At first, a bleeder circuit produces one first input voltage and one second input voltage according to one with reference to a high voltage and a generator output voltage.Wherein be higher than first input voltage with reference to high voltage, first input voltage is higher than this second input voltage, and second input voltage is higher than the generator output voltage.
Then, one first differential amplifier produces one first output voltage signal according to a reference input voltage and first input voltage.Then, one second differential amplifier produces one second output voltage signal according to the reference input voltage and second input voltage.When first output voltage signal was noble potential, one first switch provided a high voltage source to the generator output voltage.When second output voltage signal was noble potential, one second switch provided a low-voltage source to the generator output voltage.
When first input voltage was lower than this reference input voltage, first output voltage signal is in high potential state made the generator output voltage increase.When second input voltage was higher than reference input voltage, second output voltage signal is in high potential state made the generator output voltage reduce.By this, the generator output voltage is a stable in fact voltage.
Because this voltage generator can determine the scope of the magnitude of voltage of generator output voltage according to first input voltage, second input voltage and reference input voltage, so this voltage generator can produce a stable in fact voltage.Again because in the approach that transmits first output voltage signal and second output voltage signal, can add one first mode switch circuit and one second mode switch circuit, so voltage generator can provide bit line pre-charge voltage and capacitor board voltage at normal mode, when the burn-in testing pattern, can close.
[description of drawings]
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Figure 1A illustrates the calcspar of voltage generator of the present invention; And
Figure 1B illustrates the circuit diagram of the preferred embodiment of voltage generator of the present invention.
[embodiment]
Figure 1A illustrates the calcspar of voltage generator of the present invention.Please refer to Figure 1A, voltage generator 100 comprises a bleeder circuit 102, one first differential amplifier 104, one second differential amplifier 106, one first switch 108 and one second switch 110.
First differential amplifier 104 produces first output voltage signal 118 according to the reference input voltage 122 and first input voltage 112.Second differential amplifier 106 produces second output voltage signal 120 according to the reference input voltage 122 and second input voltage 114.
When first output voltage signal 118 was noble potential, 108 pairs of generator output voltages 462 of first switch provided a high voltage source 123.When second output voltage signal 120 was noble potential, 110 pairs of generator output voltages 462 of second switch provided a low-voltage source 124.
When first input voltage 112 was lower than reference input voltage 122, first output voltage signal 118 is in high potential state made generator output voltage 462 increase.When second input voltage 114 was higher than reference input voltage 122, second output voltage signal 120 is in high potential state made generator output voltage 462 reduce.
Figure 1B illustrates the circuit diagram of the preferred embodiment of voltage generator of the present invention.In the present embodiment, first switch 108 is a MOS transistor 126 for instance.Second switch 110 is a MOS transistor 128 for instance.The gate of the MOS transistor 126 of first switch 108 is connected in first output voltage signal 118.The drain electrode of the MOS transistor 126 of first switch 108 is connected to high voltage source 123.
The source electrode of the MOS transistor 126 of first switch 108 is connected to the drain electrode of the MOS transistor 128 of second switch 110.The gate of the MOS transistor 128 of second switch 110 is connected to second output voltage signal 120.The source electrode of the MOS transistor 128 of second switch 110 is connected to low-voltage source 124.The drain electrode of the MOS transistor 128 of second switch 110 is connected to generator output voltage 462.
Please refer to Figure 1B, the first mode switch circuit 130 is between first differential amplifier 104 and first switch 108.The first mode switch circuit 130 receives the burn-in testing mode signal, and WBI 464, and WBIN 134, and wherein WBIN 134 is opposite signals of WBI 464.
The second mode switch circuit 132 places between second differential amplifier 106 and second switch 110.The second mode switch circuit 132 receives the burn-in testing mode signal, and WBI 464, and WBIN 134.
The first mode switch circuit 130 and the second mode switch circuit 132 can provide the selection of switching, whether provide generator output voltage 462 with decision.For example, when this voltage generator 100 is used for the presintering test circuit of a DRAM, generator output voltage 462 can provide a capacitor board voltage to give storage capacitors in the memory cell at normal mode, when the burn-in testing pattern, voltage generator 100 can cut off first output voltage signal 118 and second output voltage signal 120 via a burn-in testing mode signal WBI 464, make burn-in testing voltage to force the storage capacitors that inputs in the memory cell, so that this storage capacitors is pressurizeed via test pin position 129.
When burn-in testing mode signal WBI 464 activations, the first mode switch circuit 130 cuts off the path of first output voltage signal, 118 to first switchs 108.The second mode switch circuit 132 cuts off the path of second output voltage signal, 120 to second commutation circuits 110.When burn-in testing mode signal WBI 464 anergies, the first mode switch circuit 130 is connected to first switch 108 with first output voltage signal 118.The second mode switch circuit 132 is connected to second switch 110 with second output voltage signal 120.
When normal mode, burn-in testing mode signal WBI 464 is in low-potential state. Differential amplifier 104 and 106 is all starting state.Differential amplifier 104 has initiatively load 136 of PMOS, PMOS transistor 140 and 142, NMOS input end, nmos pass transistor 144 and 146.
When first input voltage 112 was lower than reference input voltage 122,118 of first output voltage signals are accurate to rise opening MOS transistor 126, and gives generator output voltage 462 by high voltage source 123 supply of current.When second input voltage 114 is higher than reference input voltage 122,120 accurate risings of second output voltage signal with unlatching MOS transistor 128, and electric current exports to low-voltage source 124 by generator output voltage 462.Voltage generator 100 can not be supplied in a scope that defines or derived current is given generator output voltage 462.This scope is
VCC-(VCC-Vref)*(R1+R2+R3)/R1＜VEQ＜VCC-(VCC-Vref)*(R1+R2+R3)/(R1+R2)
Wherein VCC is with reference to high voltage 116 for instance; Vref is a reference input voltage 122; R1 156, R2 158 and R3 160 are the resistance of bleeder circuit 102.
In aforesaid equation, do not comprise the parameter of step or element, so voltage generator 100 is disobeyed step and changed.In the burn-in testing pattern, MOS transistor 126 and 128 is closed by WBI 464, and wherein WBI 464 is in high potential state.Generator output voltage 462 forces input by test pin position 129.
In sum, because this voltage generator can determine the scope of the magnitude of voltage of generator output voltages 462 according to first input voltage 112, second input voltage 114 and reference input voltage 122, so this voltage generator 100 can produce a stable in fact voltage.Again because in the approach that transmits first output voltage signal 118 and second output voltage signal 120, can add one first mode switch circuit 130 and one second mode switch circuit 132, so voltage generator 100 can provide bit line pre-charge voltage and capacitor board voltage at normal mode, when the burn-in testing pattern, can close.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly be familiar with the person skilled in art; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when the scope according to claims.
Claims (14)
1. a voltage generator is used to produce a stable in fact voltage, and this voltage generator comprises at least:
One bleeder circuit, produce one first input voltage and one second input voltage according to an output voltage with reference to high voltage and this voltage generator, wherein should be higher than this first input voltage with reference to high voltage, this first input voltage is higher than this second input voltage, and this second input voltage is higher than the output voltage of this voltage generator;
One first differential amplifier produces one first output voltage signal according to a reference input voltage and this first input voltage;
One second differential amplifier produces one second output voltage signal according to this reference input voltage and this second input voltage;
One first switch, when this first output voltage signal was noble potential, this first switch provided a high voltage source to this voltage generator output voltage; And
One second switch, when this second output voltage signal was noble potential, this second switch provided a low-voltage source to this voltage generator output voltage;
Wherein work as this first input voltage and be lower than this reference input voltage, this first output voltage signal is in high potential state makes this voltage generator output voltage increase; And
When this second input voltage is higher than this reference input voltage, this second output voltage signal is in high potential state makes this voltage generator output voltage reduce.
2. voltage generator according to claim 1, it is characterized in that, this first switch is a MOS transistor, the gate of this MOS transistor is connected in this first output voltage signal, the drain electrode of this MOS transistor is connected in this high voltage source, and the source electrode of this MOS transistor is connected in the node that this voltage generator output voltage is provided.
3. voltage generator according to claim 1, it is characterized in that, this second switch is a MOS transistor, the gate of this MOS transistor is connected in this second output voltage signal, the source electrode of this MOS transistor is connected in this low-voltage source, and the drain electrode of this MOS transistor is connected in the node that this voltage generator output voltage is provided.
4. voltage generator according to claim 1 is characterized in that, further comprises:
One first mode switch circuit places between this first differential amplifier and this first switch, and this first mode switch circuit receives a burn-in testing mode signal; And
One second mode switch circuit places between this second differential amplifier and this second switch, and this second mode switch circuit receives this burn-in testing mode signal;
Wherein when this burn-in testing mode signal activation, this first mode switch circuit cuts off the path of this first output voltage signal to this first switch, and this second mode switch circuit cuts off the path of this second output voltage signal to this second commutation circuit; And
When this burn-in testing mode signal anergy, this first mode switch circuit is connected to this first switch with this first output voltage signal, and this second mode switch circuit is connected to this second switch with this second output voltage signal.
5. voltage generator according to claim 1 is characterized in that, this bleeder circuit comprises at least:
One first resistance, an end are connected in provides this reference high-tension node;
One second resistance; And
One the 3rd resistance, an end is connected in the node that this voltage generator output voltage is provided;
Wherein this first resistance, this second resistance and the 3rd resistance are connected in regular turn, and this bleeder circuit produces this first input voltage and this second input voltage with reference to high voltage and this voltage generator output voltage in the dividing potential drop mode according to this.
6. voltage generator according to claim 1 is characterized in that, this first differential amplifier comprises at least:
Initiatively load of one PMOS;
One first nmos pass transistor, the gate of this first nmos pass transistor is connected in this reference input voltage, and the drain electrode of this first nmos pass transistor is connected in initiatively load of this PMOS; And
One second nmos pass transistor, the gate of this second nmos pass transistor are connected in this first input voltage, and the drain electrode of this second nmos pass transistor is connected in initiatively load of this PMOS.
7. voltage generator according to claim 1 is characterized in that, this second differential amplifier comprises at least:
Initiatively load of one NMOS;
One the one PMOS transistor, the transistorized gate of a PMOS is connected in this reference input voltage, and a PMOS transistor drain is connected in initiatively load of this NMOS; And
One the 2nd PMOS transistor, the transistorized gate of the 2nd PMOS is connected in this second input voltage, and the 2nd PMOS transistor drain is connected in initiatively load of this NMOS.
8. method that produces burning voltage comprises at least:
One bleeder circuit produces one first input voltage and one second input voltage according to one with reference to a high voltage and a voltage generator output voltage, wherein should be higher than this first input voltage with reference to high voltage, this first input voltage is higher than this second input voltage, and this second input voltage is higher than this voltage generator output voltage;
One first differential amplifier produces one first output voltage signal according to a reference input voltage and this first input voltage;
One second differential amplifier produces one second output voltage signal according to this reference input voltage and this second input voltage;
When this first output voltage signal was noble potential, one first switch provided a high voltage source to this voltage generator output voltage;
When this second output voltage signal was noble potential, one second switch provided a low-voltage source to this voltage generator output voltage;
When this first input voltage was lower than this reference input voltage, this first output voltage signal is in high potential state made this voltage generator output voltage increase; And
When this second input voltage was higher than this reference input voltage, this second output voltage signal is in high potential state made this voltage generator output voltage reduce;
Like this, this voltage generator output voltage is a stable in fact voltage.
9. method according to claim 8 is characterized in that, more comprises:
Provide a MOS transistor as this first switch;
The gate of this MOS transistor is connected in this first output voltage signal;
The drain electrode of this MOS transistor is connected in this high voltage source; And
The source electrode of this MOS transistor is connected in the node that this voltage generator output voltage is provided.
10. method according to claim 8 is characterized in that, more comprises:
Provide a MOS transistor as this second switch;
The gate of this MOS transistor is connected in this second output voltage signal;
The source electrode of this MOS transistor is connected in this low-voltage source; And
The drain electrode of this MOS transistor is connected in the node that this voltage generator output voltage is provided.
11. method according to claim 8 more comprises:
One first mode switch circuit is placed between this first differential amplifier and this first switch, and wherein this first mode switch circuit receives a burn-in testing mode signal; And
One second mode switch circuit is placed between this second differential amplifier and this second switch, and wherein this second mode switch circuit receives this burn-in testing mode signal;
When this burn-in testing mode signal activation, this first mode switch circuit cuts off the path of this first output voltage signal to this first switch;
When this burn-in testing mode signal activation, this second mode switch circuit cuts off the path of this second output voltage signal to this second commutation circuit; And
When this burn-in testing mode signal anergy, this first mode switch circuit is connected to this first switch with this first output voltage signal; And
When this burn-in testing mode signal anergy, this second mode switch circuit is connected to this second switch with this second output voltage signal.
12. method according to claim 8 is characterized in that, more comprises:
One first resistance, one second resistance and one the 3rd resistance are connected in regular turn to be combined into this bleeder circuit, wherein an end of this first resistance is connected in provides this reference high-tension node, and an end of the 3rd resistance is connected in the node that this voltage generator output voltage is provided; And
This bleeder circuit produces this first input voltage and this second input voltage with reference to high voltage and this voltage generator output voltage in the dividing potential drop mode according to this.
13. method according to claim 8 is characterized in that, more comprises:
Initiatively load of one PMOS, one first nmos pass transistor and one second nmos pass transistor are combined into this first differential amplifier;
The gate of this first nmos pass transistor is connected in this reference input voltage;
The drain electrode of this first nmos pass transistor is connected in initiatively load of this PMOS;
The gate of this second nmos pass transistor is connected in this first input voltage; And
The drain electrode of this second nmos pass transistor is connected in initiatively load of this PMOS.
14. method according to claim 8 is characterized in that, more comprises:
Initiatively load of one NMOS, one the one PMOS transistor, one the 2nd PMOS transistor are combined into this second differential amplifier;
The transistorized gate of the one PMOS is connected in this reference input voltage;
The one PMOS transistor drain is connected in initiatively load of this NMOS;
The transistorized gate of the 2nd PMOS is connected in this second input voltage; And
The 2nd PMOS transistor drain is connected in initiatively load of this NMOS.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100286560A CN100394345C (en) | 2004-03-03 | 2004-03-03 | Voltage generator and method for generating stabilized voltage |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100286560A CN100394345C (en) | 2004-03-03 | 2004-03-03 | Voltage generator and method for generating stabilized voltage |
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| CN1664738A CN1664738A (en) | 2005-09-07 |
| CN100394345C true CN100394345C (en) | 2008-06-11 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616925A (en) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | Switch circuit |
| CN1227989A (en) * | 1998-03-03 | 1999-09-08 | 精工电子有限公司 | Power supply circuit |
| JP2000004136A (en) * | 1998-06-17 | 2000-01-07 | Rohm Co Ltd | Gain switching amplifier circuit |
| CN1243357A (en) * | 1998-07-27 | 2000-02-02 | 精工电子工业株式会社 | Power-supply circuit for liquid crystal display |
| US6236194B1 (en) * | 1999-08-06 | 2001-05-22 | Ricoh Company, Ltd. | Constant voltage power supply with normal and standby modes |
| US20020196007A1 (en) * | 2001-06-25 | 2002-12-26 | Em Microelectronic-Marin Sa | High-voltage regulator including an external regulating device |
| JP2003015751A (en) * | 2001-07-03 | 2003-01-17 | Matsushita Electric Ind Co Ltd | High voltage generating circuit |
| US6600692B2 (en) * | 2001-02-27 | 2003-07-29 | Kabushiki Kaisha Toshiba | Semiconductor device with a voltage regulator |
-
2004
- 2004-03-03 CN CNB2004100286560A patent/CN100394345C/en not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616925A (en) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | Switch circuit |
| CN1227989A (en) * | 1998-03-03 | 1999-09-08 | 精工电子有限公司 | Power supply circuit |
| JP2000004136A (en) * | 1998-06-17 | 2000-01-07 | Rohm Co Ltd | Gain switching amplifier circuit |
| CN1243357A (en) * | 1998-07-27 | 2000-02-02 | 精工电子工业株式会社 | Power-supply circuit for liquid crystal display |
| US6236194B1 (en) * | 1999-08-06 | 2001-05-22 | Ricoh Company, Ltd. | Constant voltage power supply with normal and standby modes |
| US6600692B2 (en) * | 2001-02-27 | 2003-07-29 | Kabushiki Kaisha Toshiba | Semiconductor device with a voltage regulator |
| US20020196007A1 (en) * | 2001-06-25 | 2002-12-26 | Em Microelectronic-Marin Sa | High-voltage regulator including an external regulating device |
| JP2003015751A (en) * | 2001-07-03 | 2003-01-17 | Matsushita Electric Ind Co Ltd | High voltage generating circuit |
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| CN1664738A (en) | 2005-09-07 |
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