CN100392839C - Method for monitoring ion disposing process - Google Patents
Method for monitoring ion disposing process Download PDFInfo
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- CN100392839C CN100392839C CNB2003101083249A CN200310108324A CN100392839C CN 100392839 C CN100392839 C CN 100392839C CN B2003101083249 A CNB2003101083249 A CN B2003101083249A CN 200310108324 A CN200310108324 A CN 200310108324A CN 100392839 C CN100392839 C CN 100392839C
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- ion
- supervising
- implanting ions
- disposing process
- cloth
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- 238000000034 method Methods 0.000 title claims abstract description 97
- 238000012544 monitoring process Methods 0.000 title claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 26
- 238000005496 tempering Methods 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims description 83
- 239000004744 fabric Substances 0.000 claims description 30
- 238000012360 testing method Methods 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000002513 implantation Methods 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 description 17
- 239000002019 doping agent Substances 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000012861 aquazol Substances 0.000 description 2
- 229920006187 aquazol Polymers 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The present invention discloses a method for monitoring an ion implantation process, which is used for monitoring the implantation of low energy impurities (the implantation energy is smaller than 10KeV). The method comprises the following steps: a layer of shielding layer is covered on the ion implantation layer by using a low temperature process; the high temperature prompt tempering processing is carried out; assembly parameters are measured, wherein the low temperature process is carried out at the temperature below 400 DEG C, and a plasma enhanced-tetraethoxysilane (PETEOS) process can be used. The shielding layer is an oxide layer, the thickness is from 350 to 1000 angstroms, and therefore, the impurities are prevented from overflowing in the tempering process, and the monitoring quality can be greatly improved.
Description
Technical field
The invention relates to a kind of method for supervising of ion disposing process, more plant,, increase the method for supervising of yields with the real-time assembly processing procedure that improves relevant for a kind of cloth of monitoring low-yield impurity.
Background technology
Along with the semiconductor subassembly development of technology, establishment of component requires also more and more accurate, and is therefore also more and more accurate for the requirement of foreign atom in the degree of depth and distribution.Be traditionally with the thermal diffusion mode with foreign atom or ion by the processing procedure of diffusion into the surface to component internal, can't be applicable to deep-sub-micrometer assembly processing procedure because of the problem of horizontal proliferation.
And ion implantation is that foreign atom is quickened directly to enter in the chip with the pattern of charged ion, the degree of depth that ion is implanted can be controlled with the energy size, impurity dose can be planted the control of time and ion beam current with cloth, can do accurate selection with the analysis magnetic field that cloth is planted machine as for the implant impurity atomic species.
Implanting ions is owing to be to enter chip internal with accelerated mode, can cause lattice to damage or disorder, and then have a strong impact on the semiconductor subassembly parameter; For the ion that makes implantation arrives displacement position, after planting, cloth needs to carry out tempering (annealing) step simultaneously.In the industry cycle widely used at present tempering mode is for using the tempering (RTA) that is rapidly heated, and only needs can finish tempering in about 100 seconds, uses boiler tube then to need several minutes to a few hours.Further reduce tempering time as need, can carry out tempering with laser beam or electron beam.
Referring to Fig. 1, be the cutaway view that a conventional ion cloth is planted machine 29, for process parameter is done correction, except assembly chip 20, also be provided with test chip 22 at board 23.Before production, can rotary machine 23 and make test chip 22 place vacuum state reative cell (chamber) 24 in, and the cloth of accepting ion beam 28 plants, and then test chip 22 moved on to 32a between measurement zone.This test chip 22 of 32a place carries out prompt tempering between measurement zone.After prompt tempering, promptly available laser 33 sees through 50 pairs of test chip 22 measurement of reflectivity of transparency window; Or with four-point probe measurement component characteristic parameter such as face resistance (sheet resistance) etc., can understand the implanting ions result and whether meet demand, if the cloth amount of planting is not enough, then assembly chip 20 is inserted reative cell 24, proceed cloth to plant; If the cloth amount of planting is too many, then adjust process parameter, when next group (batch) processing procedure, reduce the dosage that cloth is planted.
(for＜10KeV) the ion disposing process, because ion concentration mostly concentrates on the surface, at the prompt tempering processing procedure, these ions are as easy as rolling off a log to be lost from the assembly surface ease, causes and measures and the error during calibration yet for low-yield.Referring to Fig. 2, in the known calibration process to the measurement result of same process parameter different time.Transverse axis is the different processing procedure date, and the longitudinal axis is the face resistance value that measures.Thus figure as can be seen, for low-yield (for＜10KeV) the ion disposing process, known calibrating mode utmost point inaccuracy, and then can have influence on follow-up a large amount of procedure for producing.
Summary of the invention
Therefore a purpose of the present invention is to provide a kind of method that can the effective monitoring ion disposing process, with the real-time assembly processing procedure that improves, increases yields.
Another object of the present invention is to provide a kind of implanting ions device with real-time monitoring and control, the cloth that can be used for monitoring low-yield impurity is planted, and with the real-time assembly processing procedure that improves, increases yields.
For reaching above-mentioned purpose of the present invention, the invention provides a kind of method for supervising of ion disposing process, be that the cloth that is used to monitor low-yield impurity is planted, comprise the following step: use low temperature process on this implanting ions layer, to cover one deck shielding layer; High temperature prompt tempering is handled; And measurement component parameter; Wherein low temperature process is to carry out being lower than under 400 ℃ the temperature, and can use electricity slurry enhancing-tetraethoxysilane (PETEOS) processing procedure; This shielding layer is a thickness
Oxide skin(coating) and can avoid impurity in drawing process, to overflow, significantly improve the monitoring quality.
For reaching above-mentioned purpose of the present invention, the invention provides a kind of implanting ions device with real-time monitoring and control, be that the cloth that is used to monitor low-yield impurity is planted, this implanting ions device comprises: an ion implanter may, have a reative cell, can be with a test chip implant impurity ion that places in the reative cell; One chemical vapour deposition (CVD) unit can deposit one deck shielding layer on test chip under cryogenic conditions; One prompt tempering unit; An and assembly measuring unit; This shielding layer is that a thickness is
Oxide skin(coating) and can avoid impurity in drawing process, to overflow, significantly improve the monitoring quality; This assembly measuring unit is the face resistance of a four-point probe with the measurement assembly, can also be that optical measuring system is to measure the reflectivity of assembly.
Description of drawings
Fig. 1 is the cutaway view that a conventional ion cloth is planted machine;
Fig. 2 plants the measurement data of machine monitoring method for conventional ion cloth;
Fig. 3 is a flow chart of the present invention;
Fig. 4 is the measurement data of method for supervising of the present invention.
The number in the figure explanation
23 boards
20 assembly chips, 22 test chips
24 reative cells, 28 ion beams
29 cloth are planted between machine 32a measurement zone
33 laser, 50 transparency windows
Embodiment
Referring to Fig. 3, be the flow chart of the method for supervising of ion disposing process of the present invention, the cloth that the method for supervising of ion disposing process of the present invention can be used for monitoring low-yield N type impurity is planted and is comprised the following step:
S200: the test chip of purchasing;
S202: carry out low-yield N type foreign ion cloth and plant;
S204: use low temperature process on the implanting ions layer, to cover one deck shielding layer;
S206: high temperature prompt tempering is handled; And
S208: measure component parameter.
Wherein in step S202, low energy ion cloth is planted and is meant that cloth plants the cloth of energy under 2KeV and plant condition.Because (for＜10KeV) the ion disposing process, because ion concentration mostly concentrates on the surface, in the prompt tempering processing procedure, these ions are as easy as rolling off a log to be lost from the assembly surface ease, causes and measures and the error during calibration for low-yield.In this step, if test chip is a silicon, then N type impurity can be phosphorus (P), arsenic (As) or antimony (Sb).
Be to use low temperature process to cover one deck shielding layer in step S204 on the implanting ions layer, for example can use the PETEOS processing procedure to cover one deck oxide shielding layer on the implanting ions layer, this oxide can suppress implanting ions and overflow from assembly surface.Therefore in follow-up drawing process, the ion that can avoid Yin Gaowen to produce is overflowed, and then has influence on the measurement of component parameter.
Tetraethoxysilane (TEOS) is an organic molecule, and can form hydrogen bond and physical absorption in chip surface with surface atom.Therefore the TEOS film has good step coverage (stepcoverage).In order to reduce process temperatures, can make electricity consumption slurry enhancing-tetraethoxysilane (PETEOS), its reaction equation is as follows:
Si (OC
2H
5)
4+ O
2→ SiO
2+ other volatile by-product
The heating of electricity slurry
Owing to make electricity consumption slurry assistant heating, so process temperatures can be controlled under 400 ℃, can prevent that also the ion that Yin Gaowen produces from overflowing.
At step S206 is to carry out high temperature prompt tempering to handle, because after implanting ions, the silicon crystalline structure on close surface can be subjected to the impact of high energy ion and be badly damaged, therefore need the processing procedure of a high temperature to make the damage tempering, to recover mono-crystalline structures and to make dopant activation (activation).Need prevent that in activation process impurity from having diffusion phenomena, therefore need under 1000 ℃ high temperature, to carry out prompt tempering.
At step S208 is to carry out component parameter to measure, with the processing procedure of assessment implanting ions.The kind of implanting ions alloy, connect the face degree of depth and concentration of dopant is the key factor that influences component parameter.Four-point probe is that cloth is planted the normal instrument that uses of monitoring in the processing procedure, can measure face resistance, and then obtain the data of the dense element of alloy.Another kind of operable metering system is that (opticalmeasurement system OMS), is to use laser as survey tool to optical measuring system, knows the dense element of alloy by measurement of reflectivity.
For the effect of the method for supervising of verifying ion disposing process of the present invention, the inventor carries out following test experiments:
Dopant species: arsenic
Cloth is planted energy: 2KeV
Dopant dose: 10
15/ cm
2, and do respectively ± 10% variation
Inclination angle: 0 degree
The step of using low temperature process to cover one deck shielding layer on the implanting ions layer in S204 can form respectively
PEOX or
PETEOS; At S206 is that the step of carrying out high temperature prompt tempering processing can use 1100 ℃, 30 seconds RTA processing (1100RTA30S) and 1050 ℃, 30 seconds RTA to handle (1050RTA30S) respectively, and the numbering of the situation of these different disposal is as shown in table 1 below:
Table 1
And measurement result is as shown in table 2 below:
Table 2
| Dose | Mean | Std. | Sens. | Mean | Std. | Sens. |
| PEOX(350A) | 1100RTA30S | 1050RTA30S | ||||
| 9.00E+14 | 163.34 | 0.375 | 1.2362 | 207.65 | 0.647 | 1.3118 |
| 1.00E+15 | 145.37 | 0.344 | 183.57 | 0.530 | ||
| 1.10E+15 | 131.71 | 0.350 | 0.9397 | 167.84 | 0.416 | 0.8569 |
| PETEOS(1000A) | 1100RTA30S | 1050RTA30S | ||||
| 9.00E+14 | 167.99 | 0.689 | 1.2270 | 213.97 | 0.457 | 1.3416 |
| 1.00E+15 | 149.63 | 0.427 | 188.66 | 0.447 | ||
| 1.10E+15 | 136.07 | 0.464 | 0.9062 | 170.48 | 0.389 | 0.9636 |
(Mean: mean value Std: standard deviation Sens: face resistance is for the susceptibility of dosage)
As can be seen from Table 2, behind the method for supervising of use ion disposing process of the present invention, can significantly improve the error of data.Effect of the present invention can be known by the measurement data of Fig. 4, as shown in this figure, after having used oxide cover layer, can suppress the effusion phenomenon of ion when high tempering, and obtain more accurate component parameter measurement data.
The cloth that the method for supervising of ion disposing process of the present invention also can be used for monitoring low-yield p type impurity is planted and is comprised the following step:
S200 ': the test chip of purchasing;
S202 ': carry out low-yield p type impurity implanting ions;
S204 ': use low temperature process on the implanting ions layer, to cover one deck shielding layer;
S206 ': high temperature prompt tempering is handled; And
S208 ': measure component parameter.
Wherein the p type impurity ion is boron (B).
Moreover, the present invention also provides a kind of implanting ions device with real-time monitoring and control, the cloth that can be used for monitoring low-yield impurity is planted, this implanting ions device is mainly outside ion implanter may, add a chemical vapour deposition (CVD) unit, can under cryogenic conditions, on test chip, deposit one deck shielding layer; One prompt tempering unit; An and assembly measuring unit.Behind the test chip implant impurity ion of ion implanter may in reative cell, this chemical vapour deposition (CVD) unit can cover one deck shielding layer on this implanting ions layer, for example serviceability temperature is at the slurry of the electricity below 400 ℃ enhancing-tetraethoxysilane (PETEOS) processing procedure, and formation thickness is
Oxide.Because this oxide can suppress implanting ions and overflow from assembly surface.Therefore in follow-up drawing process, the ion that can avoid Yin Gaowen to produce is overflowed, and then has influence on the measurement of component parameter.This assembly measuring unit is the face resistance of a four-point probe with the measurement assembly: or be that optical measuring system is to measure the reflectivity of assembly.
In sum, the method for supervising of ion disposing process of the present invention, but the method for effective monitoring ion disposing process with the real-time assembly processing procedure that improves, increase yields, are a rare invention in fact.But notice the application is not limited to above-mentioned specific embodiment, and can do many variations, all in the application's case claim.
Claims (17)
1. the method for supervising of an ion disposing process is that the cloth that is used to monitor low-yield impurity is planted, and wherein plants energy with cloth on a test chip and plants processing procedure less than the low-yield foreign ion cloth of 10KeV and form an implanting ions layer, and the method comprises the following step:
Serviceability temperature is lower than 400 ℃ low temperature process and covers one deck shielding layer on this implanting ions layer;
High temperature prompt tempering between 1000 ℃ to 1100 ℃ is handled; And
Measure component parameter, described component parameter comprises face resistance, reflectivity.
2. the method for supervising of ion disposing process as claimed in claim 1 is characterized in that, described low temperature process is that an electricity slurry strengthens a tetraethoxysilane (PETEOS).
3. the method for supervising of ion disposing process as claimed in claim 2 is characterized in that, described shielding layer is the monoxide layer.
4. the method for supervising of ion disposing process as claimed in claim 3 is characterized in that, the thickness of described oxide skin(coating) is 350-1000A.
5. the method for supervising of ion disposing process as claimed in claim 1 is characterized in that, described test chip is a silicon.
6. the method for supervising of ion disposing process as claimed in claim 5 is characterized in that, described foreign ion is a N type impurity.
7. the method for supervising of ion disposing process as claimed in claim 6 is characterized in that, described N type impurity can be phosphorus (P), arsenic (As) or antimony (Sb).
8. the method for supervising of ion disposing process as claimed in claim 5 is characterized in that, described foreign ion is a p type impurity.
9. the method for supervising of ion disposing process as claimed in claim 8 is characterized in that, described p type impurity can be boron (B).
10. the method for supervising of ion disposing process as claimed in claim 1 is characterized in that, described resistance is to measure with four-point probe.
11. the method for supervising of ion disposing process as claimed in claim 1 is characterized in that, described resistance is to measure with optical measuring system.
12. the implanting ions device with real-time monitoring and control can be used for monitoring cloth and plants energy and plant less than the cloth of the low-yield impurity of 10KeV, this implanting ions device comprises:
One ion implanter may has a reative cell, can be with a test chip implant impurity ion that places in the reative cell;
One chemical vapour deposition (CVD) unit can be lower than under 400 ℃ the cryogenic conditions deposition one deck shielding layer on test chip in temperature;
One prompt tempering unit;
One assembly measuring unit.
13. the implanting ions device with real-time monitoring and control as claimed in claim 12 is characterized in that, described chemical vapour deposition (CVD) unit can carry out the low temperature process that the electricity slurry strengthens a tetraethoxysilane (PETEOS).
14. the implanting ions device with real-time monitoring and control as claimed in claim 12 is characterized in that described shielding layer is the monoxide layer.
15. the implanting ions device with real-time monitoring and control as claimed in claim 14 is characterized in that the thickness of described oxide skin(coating) is 350-1000A.
16. the implanting ions device with real-time monitoring and control as claimed in claim 12 is characterized in that, described assembly measuring unit is that a four-point probe is to measure the face resistance of assembly.
17. the implanting ions device with real-time monitoring and control as claimed in claim 12 is characterized in that, described assembly measuring unit is that optical measuring system is to measure the reflectivity of assembly.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101083249A CN100392839C (en) | 2003-10-31 | 2003-10-31 | Method for monitoring ion disposing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101083249A CN100392839C (en) | 2003-10-31 | 2003-10-31 | Method for monitoring ion disposing process |
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| CN1612312A CN1612312A (en) | 2005-05-04 |
| CN100392839C true CN100392839C (en) | 2008-06-04 |
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| CN103050360A (en) * | 2012-12-28 | 2013-04-17 | 昆山工研院新型平板显示技术中心有限公司 | Method and tool for monitoring uniformity and stability of ion implanter |
| CN103441069B (en) * | 2013-08-02 | 2016-01-27 | 上海华力微电子有限公司 | Improve the method for active area |
| CN103839858B (en) * | 2014-03-17 | 2017-06-16 | 上海华虹宏力半导体制造有限公司 | The monitoring method and ion injection method of the technological ability of ion implantation apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH087824A (en) * | 1994-06-16 | 1996-01-12 | Fujitsu Ltd | Ion implanting device and manufacture of semiconductor device, and ion beam control method |
| CN1146628A (en) * | 1995-06-02 | 1997-04-02 | 现代电子产业株式会社 | Method for forming junction in high speed EEPROM unit |
| US5861632A (en) * | 1997-08-05 | 1999-01-19 | Advanced Micro Devices, Inc. | Method for monitoring the performance of an ion implanter using reusable wafers |
| US6157199A (en) * | 1997-12-26 | 2000-12-05 | Samsung Electronics Co., Ltd. | Method of monitoring ion-implantation process using photothermal response from ion-implanted sample, and monitoring apparatus of ion-implantation process |
| CN1424754A (en) * | 2002-12-27 | 2003-06-18 | 中国科学院上海微系统与信息技术研究所 | Preparation of silicon material on pattern dielectric body by dose-energy optimalized oxygen filling insulation |
-
2003
- 2003-10-31 CN CNB2003101083249A patent/CN100392839C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH087824A (en) * | 1994-06-16 | 1996-01-12 | Fujitsu Ltd | Ion implanting device and manufacture of semiconductor device, and ion beam control method |
| CN1146628A (en) * | 1995-06-02 | 1997-04-02 | 现代电子产业株式会社 | Method for forming junction in high speed EEPROM unit |
| US5861632A (en) * | 1997-08-05 | 1999-01-19 | Advanced Micro Devices, Inc. | Method for monitoring the performance of an ion implanter using reusable wafers |
| US6157199A (en) * | 1997-12-26 | 2000-12-05 | Samsung Electronics Co., Ltd. | Method of monitoring ion-implantation process using photothermal response from ion-implanted sample, and monitoring apparatus of ion-implantation process |
| CN1424754A (en) * | 2002-12-27 | 2003-06-18 | 中国科学院上海微系统与信息技术研究所 | Preparation of silicon material on pattern dielectric body by dose-energy optimalized oxygen filling insulation |
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