CN100386844C - Method for preparing tin dioxide quantal-point - Google Patents
Method for preparing tin dioxide quantal-point Download PDFInfo
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- CN100386844C CN100386844C CNB2006100497490A CN200610049749A CN100386844C CN 100386844 C CN100386844 C CN 100386844C CN B2006100497490 A CNB2006100497490 A CN B2006100497490A CN 200610049749 A CN200610049749 A CN 200610049749A CN 100386844 C CN100386844 C CN 100386844C
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- tin
- hydrazine hydrate
- butter
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Abstract
The present invention discloses a method for preparing tin dioxide quantum dots, which comprises the following steps: butter of tin is put into deionized water and is stirred, hydrazine hydrate of which the mole number is 4 to 8 times more than that of the butter of tin is then added, and at this moment, white slurry precipitation is generated, i.e., a coordination compound is formed between the hydrazine hydrate and the butter of tin; after stirred for 10 to 30 minutes, the prepared water solution is put into an autoclave, wherein the compactedness is 80 to 90%, the processing temperature is 150 to 250 DEG C, and the processing time is 1 to 50 hours; then, processed solution is centrifugated and dried, and SnO2 quantum dots are obtained. The present invention adopts hydrazine hydrate to substitute sodium hydroxide or ammonia water, a coordination compound cluster is formed from hydrazine hydrate and SnCl4, the cluster is very little, and the whole hydrothermal synthesis process of SnO2 is limited in the cluster. Moreover, the present invention uses cheap chemicals as raw materials, and the whole process does not need any complexing agent or surface active agent. The present invention has the advantages of simpleness, low prices and suitability for large-scale production.
Description
Technical field
The present invention relates to a kind of tin dioxide quanta point preparation method.
Background technology
When the size of nano material is reduced to a certain degree, tangible quantum size effect has just appearred, near its Fermi level electron energy level is by the quasi-continuous discrete energy levels that changes into, its energy gap broadens simultaneously, and cause significantly different (the P.M.Petroff etal.Phys.Today of characteristic such as nano material light, magnetic, heat, electricity, catalysis thus with the body material, 54,46 (2001)).With regard to semi-conducting material, when size less than or be equivalent to itself exciton Bohr radius, will show tangible quantum effect.When the size of semiconductor nanoparticle on three-dimensional during all less than its exciton Bohr radius, this nano particle is called as quantum dot, and it all has a wide range of applications at key areas such as electronics, photoelectron, catalysis and sensings.
Tin ash (SnO
2) be a kind of important n type oxide semiconductor, energy gap is about 3.6eV under the room temperature, and is extremely wide in applications such as invented solid gas sensing device, transparency conductive electrode, catalysis, lithium battery and opto-electronic devices.According to people such as Lee, SnO
2The exciton Bohr radius be about 2.7 nanometers (E.J.H.Lee et al.Appl.Phys.Lett., 84,1745 (2004)).Therefore, if SnO
2The size of nano particle less than or during near 2.7 nanometers, this nano particle is exactly SnO
2Quantum dot.SnO
2Quantum dot is expected to have more performance and more purposes, and exploitation preparation method simple, low-cost and suitable suitability for industrialized production synthesizes SnO
2Quantum dot is its research and key in application.
SnO
2Nano material is subjected to paying close attention to widely, has become one of maximum several oxide-based nanomaterials of research.At present, preparation SnO
2The method of nano material mainly contains: spray pyrolysis, hydro thermal method, evaporation, chemical vapour deposition technique and quick oxidizing process etc.But about SnO
2The report of quantum dot preparation is very few, and people such as Castillo have reported the SnO with sol-gel process preparation 2~5 nanometers
2Quantum dot (J.D.Castillo et al.Nanotechnology, 16, S300 (2005)), people such as Leite have reported and have adopted hydrolysis SnCl in ethanolic solution
22H
2The SnO of method preparation 1~3 nanometer of O
2Quantum dot (E.R.Leite, Appl.Phys.Lett., 83,1566 (2003)).Though hydro thermal method is widely used in SnO
2Synthesizing of nanostructure, but up to the present, the someone reports and adopts hydro thermal method to realize SnO as yet
2Synthesizing of quantum dot.
It is mineralizer that traditional hydro thermal method adopts NaOH or ammoniacal liquor, and its process is as follows: the OH that NaOH or ammoniacal liquor ionization go out
-Ion, OH
-With Sn
4+Ionic reaction generates Sn (OH)
4, Sn (OH)
4Under hydrothermal condition, change SnO into
2Hydrazine hydrate is a kind of chemical raw material commonly used, cheap, and as reducing agent, simultaneously, it can ionization go out OH usually
-, promptly also can make mineralizer.If with the hydrazine hydrate is mineralizer, hydro-thermal is synthesized SnO
2Process as follows: before the hydro-thermal reaction, hydrazine (ligand) and SnCl
4Form complex bunch, this coordination thing slow reaction bunch under hydrothermal condition generates SnO
2Quantum dot.Therefore, with the hydrazine hydrate be the size that the hydro-thermal technology of mineralizer can reduce product greatly.
Summary of the invention
The object of the present invention is to provide a kind of tin dioxide quanta point preparation method, utilize hydrazine hydrate to synthesize tin dioxide quantal-point (2.3~3.1 nanometer) for the hydro-thermal technology of mineralizer.
The technical solution used in the present invention is that the step of this method is as follows:
Butter of tin is put into deionized water for stirring, adding molal quantity again is the hydrazine hydrate of 4~8 times of butters of tin, produce the precipitation of white pulpous state this moment, be to have formed complex between hydrazine hydrate and the butter of tin, stir and the above-mentioned aqueous solution for preparing put into autoclave in 10~30 minutes that compactedness is 80~90%, treatment temperature is 150~250 ℃, processing time is 1~50 hour, with solution centrifugal, the drying handled well, just obtains tin dioxide quantal-point then.
Described tin dioxide quantal-point diameter is 2.3~3.1 nanometers, and most particle diameter is less than 2.7 nanometers, and the exciton Bohr radius of tin ash is 2.7 nanometers.
The beneficial effect that the present invention has is: traditional hydro thermal method is difficult to realize SnO
2Synthesizing of quantum dot, method that this invention proposes is effectively with SnO
2Nanoparticle size drops to below 3 nanometers.Maximum characteristics of the present invention are to adopt hydrazine hydrate (N
2H
4H
2O) replace NaOH or ammoniacal liquor, hydrazine hydrate (ligand) and SnCl
4Form complex bunch (SnCl
4)
m(N
2H
4)
n, this bunch very tiny (being about several nanometers), and whole SnO
2The hydro-thermal building-up process carry out in all being limited in bunch, therefore obtained SnO
2Quantum dot.And the raw material that the present invention adopts all is cheap chemicals, and whole process need not any complexing agent or surfactant, and it is simple, cheap that the present invention has, and can be fit to large-scale production.
Description of drawings
Fig. 1 is SnO
2The XRD figure spectrum of quantum dot;
Fig. 2 is SnO
2The transmission electron microscope photo of quantum dot, (a) photo and electronic diffraction; (b) high-resolution photo.
Embodiment
Embodiment 1:
With 2.2400 gram butter of tin (SnCl
45H
2O, 0.0064 mole) put into 160 ml deionized water, add 1.2800 gram hydrazine hydrate (N again
2H
4H
2O, 0.0256 mole), stir after 10 minutes, the above-mentioned solution for preparing to be put in the polytetrafluoroethyllining lining of autoclave, the liner volume is 200 milliliters, promptly compactedness is 80%.This solution was handled 10 hours down at 150 ℃, solution centrifugal of handling well and drying, obtained SnO
2Quantum dot.Fig. 1 is SnO
2The XRD figure spectrum of quantum dot is with SnO
2Standard card (JCPDS 77-0452) fit like a glove, illustrate that product is pure SnO
2Fig. 2 a is SnO
2The transmission electron microscope photo of quantum dot and electron diffraction pattern, Fig. 2 b are their high-resolution photos, and the product of gained is the nano particle of 2.3~3.1 nanometers as can be seen from Fig. 2 a and Fig. 2 b.
Embodiment 2:
With 2.2400 gram stannic chloride (SnCl
45H
2O, 0.0064 mole) put into 180 ml deionized water, add 1.9200 gram hydrazine hydrate (N again
2H
4H
2O, 0.0390 mole), stir after 20 minutes, the above-mentioned solution for preparing to be put in the polytetrafluoroethyllining lining of autoclave, the liner volume is 200 milliliters, promptly compactedness is 90%.This solution was handled 30 hours down at 200 ℃, solution centrifugal of handling well and drying, obtained SnO
2Quantum dot.
Embodiment 3:
With 2.2400 gram stannic chloride (SnCl
45H
2O, 0.0064 mole) put into 160 ml deionized water, add 2.5600 gram hydrazine hydrate (N again
2H
4H
2O, 0.0512 mole), stir after 30 minutes, the above-mentioned solution for preparing to be put in the polytetrafluoroethyllining lining of autoclave, the liner volume is 200 milliliters, promptly compactedness is 80%.This solution was handled 50 hours down at 250 ℃, solution centrifugal of handling well and drying, obtained SnO
2Quantum dot.
Claims (2)
1. tin dioxide quanta point preparation method, the step that it is characterized in that this method is as follows: butter of tin is put into deionized water for stirring, adding molal quantity again is the hydrazine hydrate of 4~8 times of butters of tin, produce the precipitation of white pulpous state this moment, be to have formed complex between hydrazine hydrate and the butter of tin, stir and the above-mentioned aqueous solution for preparing put into autoclave in 10~30 minutes, compactedness is 80~90%, treatment temperature is 150~250 ℃, processing time is 1~50 hour, then with the solution centrifugal of handling well, drying just obtains tin dioxide quantal-point.
2. a kind of tin dioxide quanta point preparation method according to claim 1 is characterized in that: described tin dioxide quantal-point diameter is 2.3~3.1 nanometers, and the exciton Bohr radius of tin ash is 2.7 nanometers.
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CN100386844C true CN100386844C (en) | 2008-05-07 |
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Families Citing this family (11)
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---|---|---|---|---|
CN101973576B (en) * | 2010-11-02 | 2012-05-02 | 上海大学 | Electronic accelerator irradiation and modification method of tin dioxide quantum dots |
CN104310306B (en) * | 2014-09-26 | 2016-07-13 | 西安工业大学 | High sensitivity wine sensitive gas sensor and preparation method thereof, mesoporous SnO2The preparation method of material |
CN105417575B (en) * | 2015-12-14 | 2017-05-31 | 上海交通大学 | A kind of preparation method of the single dispersing tin dioxide quantal-point hydrosol |
CN105702958B (en) * | 2016-01-17 | 2020-06-02 | 西安交通大学 | Preparation method and application of tin dioxide quantum dot solution and composite material thereof |
CN105776323B (en) * | 2016-02-26 | 2018-08-14 | 西南石油大学 | A method of it prepares with visible light-responded tin dioxide quantal-point |
CN107235507A (en) * | 2017-04-13 | 2017-10-10 | 北京航空航天大学 | A kind of magnanimity preparation method of quantum dot |
CN107689444A (en) * | 2017-04-14 | 2018-02-13 | 北京航空航天大学 | A kind of electrode material of lithium ion battery |
CN108342749B (en) * | 2018-02-01 | 2020-05-12 | 太原理工大学 | Modified SnO2Preparation method of electrode and application of electrode in photoelectrocatalysis reduction of CO2Preparation of formic acid |
US11377723B2 (en) | 2020-03-30 | 2022-07-05 | Tcl China Star Optoelectronics Technology Co., Ltd. | Method of patterning quantum dots, device using same, and system thereof |
CN111427111A (en) * | 2020-03-30 | 2020-07-17 | Tcl华星光电技术有限公司 | Quantum dot patterning method, device and system |
CN113267476B (en) * | 2021-04-30 | 2022-11-25 | 大连海事大学 | Method for detecting sulfur content in marine fuel oil by using tin dioxide quantum dots |
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CN85100030A (en) * | 1985-04-01 | 1986-06-10 | 天津大学 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
CN1317803A (en) * | 2001-05-29 | 2001-10-17 | 华东理工大学 | Process for preparing light-colour electrically conductive Sb-dopped SnO2 powder |
WO2005095278A1 (en) * | 2004-04-01 | 2005-10-13 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Production of metal-oxide highly crystalline and high-purity nanoparticles |
CN1724383A (en) * | 2005-06-21 | 2006-01-25 | 电子科技大学 | Process for preparing one-dimensional nano tin dioxide material |
-
2006
- 2006-03-08 CN CNB2006100497490A patent/CN100386844C/en not_active Expired - Fee Related
Patent Citations (4)
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---|---|---|---|---|
CN85100030A (en) * | 1985-04-01 | 1986-06-10 | 天津大学 | Thin film SnO 2 gas-sensitive element and manufacture method thereof |
CN1317803A (en) * | 2001-05-29 | 2001-10-17 | 华东理工大学 | Process for preparing light-colour electrically conductive Sb-dopped SnO2 powder |
WO2005095278A1 (en) * | 2004-04-01 | 2005-10-13 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Production of metal-oxide highly crystalline and high-purity nanoparticles |
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