CN100382287C - Structure for encapsulating semiconductor - Google Patents
Structure for encapsulating semiconductor Download PDFInfo
- Publication number
- CN100382287C CN100382287C CNB2004100839126A CN200410083912A CN100382287C CN 100382287 C CN100382287 C CN 100382287C CN B2004100839126 A CNB2004100839126 A CN B2004100839126A CN 200410083912 A CN200410083912 A CN 200410083912A CN 100382287 C CN100382287 C CN 100382287C
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- base material
- package structure
- semiconductor
- outer frame
- semiconductor package
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 85
- 229920002521 macromolecule Polymers 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000012780 transparent material Substances 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000036244 malformation Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Led Device Packages (AREA)
Abstract
The present invention relates to a packaging structure of a semiconductor, which comprises base material, a semiconductor, an outer frame device and a high molecular filling body, wherein the base material is provided with a front surface and a reverse surface. The semiconductor is arranged on the front surface or the reverse surface of the base material. The outer frame is made of non-transparent material, is arranged on the base material, and encircles the semiconductor. The high molecular filling body can penetrate out of or penetrate into a light source, and is filled in the outer frame device. The arrangement of the manufacturing process of the present invention is easy, the cost of the required device which is lately added is low, and the technical requirements are not high. The mechanical strength of the base material is good, traditional packaging devices can be still used, the luminescent intensity is high, and the present invention can be matched with the traditional packaging devices.
Description
Technical field
The present invention relates to the encapsulating structure of a kind of semiconductor or luminous element, particularly relate to a kind of advantage that not disturbed by ambient light, and it is not yielding, increase the qualification rate and the quality of encapsulation, and when using the Chip Packaging of light-emitting diode, can be easy to reach the required package requirements of electronic chip, and more existing matrix structure is better and that cost is set is low, mainly utilizes the method for double-deck base material to improve substrate intensity characteristic and outer frame device and prevent that ambient light from disturbing; And the better package structure of photoelectric semiconductor of more existing luminous element encapsulating structure.
Background technology
In packaging industrial, what attract attention is semiconductor packages, and light-emitting diode (LED) and optical sensor packaging industrial also are accompanied by light, thin, short, the little and H.D requirement of electronic product and more show important, and the trend that has half share with semiconductor packages is more arranged.The encapsulation technology of LED or semiconductor packages industry is weeded out the old and bring forth the new especially, as the 2 pin positions and the LED of 4 pin positions, especially the pin position that meet surface adhering technology (SMT) specification requirement need in its encapsulating structure more also to represent better base material; In like manner its encapsulation back finished product brightness also is important requirement.
As everyone knows, after the electronic packaging technology is meant and completes from semiconductor integrated circuit and light-emitting diode, be loaded among the on line structure with other electronic component mutual group, become an electronic product, to realize all manufacturing process of a particular design function.The main function of electronic packaging has four kinds, is respectively that electric energy transmits (Power Distribution), signal transmits (Signal Distribution), heat abstraction (Heat Dissipation) and protection support (Protection and Support).As be usually used in IC integrated circuit (IC) chip encapsulation and LED encapsulation.
Please refer to Figure 1A to Fig. 1 C, be existing package structure for LED 1a, base material 10a adhesioluminescence diode chip for backlight unit 12a, and connect the situation (can have a plurality of grooves) of lead 14a with encapsulating material 16a encapsulation, during especially in the face of assembling, traditional package structure for LED 1a is in the face of difficult structural strength problem and brightness problem, as malformation distortion when cutting base material (base material is too thin to be taken place often), when practical application, can influence precision, and the encapsulation qualification rate is also had negative effect.Therefore be necessary to develop and a kind ofly be beneficial to cutting and structure is tough and the encapsulating structure of high brightness satisfies requirement of actual application.
Therefore, for now on the market major part need the light-emitting diode of base material, easily cut and the structure intensity of signing an undertaking is the important need of encapsulation process, and luminosity not disturbed by ambient light also be the critical function demand.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of structure tough, and can keep optoelectronic semiconductor (as light-emitting diode or the optical sensor) encapsulating structure of high brightness, the luminous element (as light-emitting diode) or the optical sensor that can be used for tool and base material mutual encapsulation demand can provide low-cost high-quality encapsulation to make.
To achieve these goals, the invention provides a kind of semiconductor package structure, its characteristics are, comprise: base material has front and reverse side; Semiconductor is arranged on this base material front or the reverse side; Outer frame device by opaque material is constituted, is located on this base material, and around this semiconductor; And the macromolecule obturation, can appear or penetrate light source, filling is in this outer frame device.
Above-mentioned semiconductor package structure, its characteristics are that this base material is the superimposed structure of multilayer material.
Above-mentioned semiconductor package structure, its characteristics are that this semiconductor is light-emitting diode or optical sensor.
Above-mentioned semiconductor package structure, its characteristics are that this outer frame device is constituted by polymer composite.
Above-mentioned semiconductor package structure, its characteristics are that the base material another side of this macromolecule obturation bottom has polymer composite relatively.
Above-mentioned semiconductor package structure, its characteristics are that this base material is a metal material, has stria, and the width range of this stria is that 0.001mm is between the 10mm.
Above-mentioned semiconductor package structure, its characteristics are that the method that this base material is processed this stria can be etching mode.
Above-mentioned semiconductor package structure, its characteristics are that this base material is a metal material, and having a thickness range is that 0.001mm is to 10mm.
Above-mentioned semiconductor package structure, its characteristics are that this base material and outer frame device are all metal material.
Above-mentioned semiconductor package structure, its characteristics are to align with the side of base material in the lateral edges plane of this outer frame device.
Above-mentioned semiconductor package structure, its characteristics are that this base material and outer frame device adopt one-body molded processing, and are macromolecular material.
Effect of the present invention is that (1) new manufacturing process is provided with easily, requiredly adds newly that to be equipped with price lower, and specification requirement is not high; (2) the base material mechanical strength is good; (3) conventional package equipment is still available; (4) luminous brightness is strong, can cooperate conventional package to make.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Figure 1A is a schematic diagram of existing package structure for LED;
Figure 1B is another schematic diagram of existing package structure for LED;
Fig. 1 C is the another schematic diagram of existing package structure for LED;
Fig. 2 A is an embodiment of the invention cross-section structure explanation schematic diagram;
Fig. 2 B is another embodiment of the present invention cross-section structure explanation schematic diagram;
Fig. 3 A is the stacked embodiment cross-sectional view of the present invention;
Fig. 3 B is the stacked embodiment cross-sectional view of the present invention;
Fig. 4 is a two plane type embodiment cross-sectional view of the present invention;
Fig. 5 A is another embodiment of the present invention cross-sectional view;
Fig. 5 B is further embodiment of this invention cross-sectional view;
Fig. 5 C is yet another embodiment of the invention cross-sectional view;
Fig. 5 D is another embodiment of the present invention cross-sectional view;
Fig. 5 E is the present invention's another embodiment cross-sectional view again; And
Fig. 6 is an embodiment of the invention plan structure schematic diagram.
Wherein, Reference numeral:
The 1a-diode package structure, the 10a-base material
The 12a-light-emitting diode chip for backlight unit, the 14a-lead
The 16a-encapsulating material, W-gap, H-thickness
The 1-package structure of photoelectric semiconductor
The 10-base material, the 12-luminous element
14-connects lead, 15-stria
16-macromolecule obturation, the 17-outer frame device
The 18-macromolecular material
Embodiment
Please refer to Fig. 2 A to Fig. 2 B, its intermediate gap is that W (for the centre of base material 10) and thickness are H, be that H is proportional to W, when the thickness of slab of Fig. 2 A is thin more then at interval can be more little, promptly the every laminate of Fig. 2 A is thick is 1/2, during as the nesting structural embedded control of Fig. 2 B, Fig. 2 B thin layer at interval can be very little, reaches to dwindle at interval and the purpose of reinforced boards, therefore according to the relation of aforementioned H to W, in like manner the structure of stack layer differs and is decided to be 1/2, can adjust according to the actual requirements.
Please refer to Fig. 3 A to Fig. 3 B, Fig. 4, Fig. 5 A to Fig. 5 E, be embodiments of the invention, wherein Fig. 3 A and Fig. 3 B are that single face is stacked, Fig. 4 is two-sided stacked, Fig. 5 A is the embodiment (outer frame device 17 among Fig. 5 D and Fig. 5 E can be metal and its base material 10 also can be metal) with outer frame device 17 to Fig. 5 E, wherein base material can be stepped construction, or base material 10 is stepped construction with housing 17 altogether, at this package structure of photoelectric semiconductor 1 of the present invention is done a narration; Base material 10 has front (be generally luminous element 12 or can be the face at optical sensor place) and reverse side; Luminous element 12 (be semi-conductive application examples, can be light-emitting diode or optical sensor) is arranged on these base material 10 fronts or the reverse side, has to connect lead 14 and stride across stria 15 and be connected with base material 10 opposite sides; Outer frame device 17 (material can be metal or precast frame) by opaque material is constituted, is located on this base material 10, and around this luminous element chip; And macromolecule obturation 16, can appear or penetrate light source, filling can be the strong macromolecular material of light transmission, as resin in this outer frame device.By Fig. 3 A and Fig. 3 B (side generalized section) and Fig. 6 (vertical view), can find out general primary structure of the present invention.
The thin portion of embodiments of the invention below will be described in detail in detail to change.Wherein this base material 10 can be multilayer or the superimposed structure (as shown in Figure 2) of double layer material, and this multilayer or double-decker are one of key character of the present invention, and it is narrow and dark to be mainly reinforced structure and stria 15; Wherein this luminous element 12 can be light-emitting diode; And wherein luminous element 12 is for can send light source; General outer frame device 17 can be polymer composite and constitutes, and helps preventing that ambient light from disturbing and optically focused (up assembling luminous) effect; Also can be as shown in Figure 4, wherein the base material another side of these macromolecule obturation 16 bottoms has macromolecular material 18 (this also is double-decker, 10 layers of one deck macromolecular material 18 and one deck base materials) relatively; Wherein this base material 10 can have stria 15, and the width range of this stria 15 generally can be 0.001mm between the 10mm; Wherein the method for these base material 10 these strias 15 of processing can be chemical etching; The thickness range of this base material 10 can be 0.001mm to 10mm; The material of this macromolecule obturation can be resin; Base material and outer frame device can be all metal material; Wherein can align with the side of base material 10 in the lateral edges plane of outer frame device 17; The wherein one-body molded processing of base material and outer frame device, and be macromolecular material.
A kind of semiconductor package structure of the present invention, it comprises: base material 10 for multilayer storehouse metal material, has front and reverse side; Semiconductor (being light-emitting diode or optical sensor) is arranged on these base material 10 fronts or the reverse side; And macromolecule obturation 16, can appear or penetrate light source, be arranged at outside this semiconductor and comprise this semiconductor.Also can comprise: base material 10 has front and reverse side; Semiconductor can be the optoelectronic semiconductor of tool photoelectricity ability, is arranged on these base material 10 fronts or the reverse side; Outer frame device 17 by opaque material is constituted, is located on this base material 10, and around this semiconductor; And macromolecule obturation 16, can appear or penetrate light source, be arranged at outside this semiconductor and comprise this semiconductor.Wherein optoelectronic semiconductor can be light-emitting diode or optical sensor.Or another embodiment of the present invention can be semiconductor package structure, and it comprises: base material has front and reverse side; Semiconductor is arranged at this base material 10 fronts or reverse side; Outer frame device 17 by opaque material is constituted, is located on this base material 10, and around this semiconductor; And macromolecule obturation 16, can appear or penetrate light source, be arranged at outside this semiconductor and comprise this semiconductor.
Feature of the present invention and convenience are, traditional monolithic base material encapsulation is changed into double-layer structure and increases outer frame device 17, make encapsulating structure improve mechanical intensive property and reinforcement luminous intensity, and it is low and little to traditional light-emitting diode chip for backlight unit packing producing line influence that cost is set.
The plant equipment of must know double-layer structure of the present invention and increasing outer frame device 17 is not high price or the equipment that is difficult for obtaining, therefore of the present invention the setting easily; And matrix structure of the present invention takes into account luminous intensity and structure is tough and tensile; And the present invention is little to the process sequence influence of conventional package program, can incorporate fully in the middle of the existing canned program, and existing canned program need not significantly to revise, and meets the actual state of manufacturing.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (11)
1. a semiconductor package structure is characterized in that, comprises:
Base material has front and reverse side, and a stria that runs through this base material, and the thickness of this base material is proportional to the width of stria, to strengthen the intensity of this base material;
Semiconductor is arranged on this base material front or the reverse side;
Outer frame device by opaque material is constituted, is located on this base material, and around this semiconductor; And
The macromolecule obturation can appear or penetrate light source, and filling is in this outer frame device.
2. semiconductor package structure according to claim 1 is characterized in that, this base material is the superimposed structure of multilayer material.
3. semiconductor package structure according to claim 1 is characterized in that, this semiconductor is light-emitting diode or optical sensor.
4. semiconductor package structure according to claim 1 is characterized in that this outer frame device is constituted by polymer composite.
5. semiconductor package structure according to claim 1 is characterized in that,
If this macromolecule obturation is arranged at the front of this substrate, the reverse side of this substrate is provided with polymer composite;
If this macromolecule obturation is arranged at the reverse side of this substrate, the front of this substrate is provided with polymer composite.
6. semiconductor package structure according to claim 1 is characterized in that, this base material is a metal material, and the width range of this stria is that 0.001mm is between the 10mm.
7. semiconductor package structure according to claim 1 is characterized in that the method that this base material is processed this stria can be etching mode.
8. semiconductor package structure according to claim 1 is characterized in that, this base material is a metal material, and the thickness range of this base material is that 0.001mm is to 10mm.
9. semiconductor package structure according to claim 1 is characterized in that this base material and outer frame device are all metal material.
10. semiconductor package structure according to claim 1 is characterized in that, aligns with the side of base material in the lateral edges plane of this outer frame device.
11. semiconductor package structure according to claim 1 is characterized in that, this base material and outer frame device adopt one-body molded processing, and are macromolecular material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100839126A CN100382287C (en) | 2004-10-12 | 2004-10-12 | Structure for encapsulating semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100839126A CN100382287C (en) | 2004-10-12 | 2004-10-12 | Structure for encapsulating semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1761053A CN1761053A (en) | 2006-04-19 |
| CN100382287C true CN100382287C (en) | 2008-04-16 |
Family
ID=36707054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100839126A Active CN100382287C (en) | 2004-10-12 | 2004-10-12 | Structure for encapsulating semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100382287C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376842A (en) * | 2010-08-11 | 2012-03-14 | 亿广科技(上海)有限公司 | Light emitting diode package structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302455A (en) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | Laminated integrated circuit package |
| CN1380704A (en) * | 2001-04-09 | 2002-11-20 | 株式会社东芝 | Luminescent device |
| CN1423347A (en) * | 2001-12-07 | 2003-06-11 | 日立电线株式会社 | Luminance element and making method thereof and lead frame for making said element |
| US6608334B1 (en) * | 1999-12-09 | 2003-08-19 | Rohm Co., Ltd. | Light-emitting chip device with case and method of manufacture thereof |
-
2004
- 2004-10-12 CN CNB2004100839126A patent/CN100382287C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302455A (en) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | Laminated integrated circuit package |
| US6608334B1 (en) * | 1999-12-09 | 2003-08-19 | Rohm Co., Ltd. | Light-emitting chip device with case and method of manufacture thereof |
| CN1380704A (en) * | 2001-04-09 | 2002-11-20 | 株式会社东芝 | Luminescent device |
| CN1423347A (en) * | 2001-12-07 | 2003-06-11 | 日立电线株式会社 | Luminance element and making method thereof and lead frame for making said element |
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| Publication number | Publication date |
|---|---|
| CN1761053A (en) | 2006-04-19 |
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