CN100382229C - Aligning marker capable of correcting manufacturing deviation and aligning method thereof - Google Patents
Aligning marker capable of correcting manufacturing deviation and aligning method thereof Download PDFInfo
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- CN100382229C CN100382229C CNB2003101007226A CN200310100722A CN100382229C CN 100382229 C CN100382229 C CN 100382229C CN B2003101007226 A CNB2003101007226 A CN B2003101007226A CN 200310100722 A CN200310100722 A CN 200310100722A CN 100382229 C CN100382229 C CN 100382229C
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- groove
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Abstract
The present invention discloses an alignment mark capable of correcting the manufacturing process deviation and an alignment method thereof. In the method, at least two end-point grooves with the width gradually reduced to zero are used as the alignment mark. By using the characteristics that when the width of the groove is zero, the offset error resulted from a film with an asymmetrical profile on the groove turns to zero, the position of the previous aligned target is represented.
Description
Technical field
The present invention relates to a kind of manufacturing process of semiconductor integrated circuit, relate in particular to the alignment mark (alignment mark) and the bearing calibration thereof of a kind of recoverable manufacturing process deviation (process bias).
Background technology
Along with the integrated level of semiconductor integrated circuit improves constantly, the design of integrated circuit becomes increasingly complex, and (critical dimension) is also more and more littler thereupon for the critical dimension of integrated circuit.Because integrated circuit is to form by the multilayer line pattern is stacked, very high to the requirement of the alignment accuracy of every layer line road pattern when the manufacturing process of semiconductor integrated circuit enters manufacturing process below 0.1 micron, and be difficult to realize.Especially when asymmetric deposit film and/or cmp film occurring, often make the film that is positioned on the alignment mark have asymmetric profile, this will increase the difficulty of described alignment issues.
In order to be well understood to the influence that pattern caused of alignment mark with asymmetric profile more, now describe in conjunction with schematic top plan view by existing " box in the box (the box-in-box) " alignment mark shown in Fig. 1 for stacked integrated circuit.Please refer to Fig. 1, the generation type of box alignment mark is to form the about 50 microns square groove 110 of the length of side earlier as alignment mark on the fringe region of wafer 100 in the box, and the degree of depth of square groove 110 is about 0.3 to 0.6 micron.Then, form after the thin film on described square groove 110, it is desirable to form another less square groove 130 in the centre of square groove 110, both central points all are positioned at C1.If but the asymmetric words of profile (profile) of this layer film, regular meeting forms the square groove 140 of offset, and its central point is C2.Because in the time of will carrying out photo-mask process to this layer film, need the square groove on this layer film of identification, and then find out its central point be used as aiming at the mark (alignmenttarget).So will the problem of deviation of the alignment may occur producing to this layer film composition because of square groove 140 central point C2 skew.
With the chemical mechanical milling method is example, and grinding wafers is directive, so regular meeting causes the asymmetric of the film profile that is positioned on the alignment mark.Please refer to Fig. 2, Fig. 2 shows and existingly causes the asymmetric cross-sectional view of film profile because of the cmp film.Form square groove 210 on wafer 200 earlier, its central point is C1.On wafer 200, deposit conformal (conformal) tungsten metal of one deck then, then carry out the cmp operation, the tungsten metal removal that will be higher than wafer 200 surfaces forms tungsten plug (not shown on the figure) in the integrated circuit district, form tungsten metal level 220 simultaneously in square groove 210.If the direction of grinding wafers is that then the thickness of the tungsten metal level 220 on square groove 210 sidewalls is that right side (B2) is greater than left side (B1) from the right side of Fig. 2 to the left.After the conformal metal level 230 of another layer of deposition, then cause its profile asymmetric, make its central point be offset to C2.Existing another alignment mark is " bar discal patch (bar-in-bar) " type, also be utilize similar principles carry out layer with layer between the aiming at of pattern, so also there is described problem.
Summary of the invention
Therefore, the technical problem to be solved in the present invention provides a kind of alignment methods of alignment mark of recoverable manufacturing process deviation, and the position that aims at the mark on wafer can not moved.
The technical problem that another will solve of the present invention provides a kind of alignment methods of alignment mark of recoverable manufacturing process deviation, makes the film with asymmetric profile that is positioned on the alignment mark can the position of offset alignment target on wafer.
A technical problem that will solve again of the present invention provides a kind of alignment methods of alignment mark of recoverable manufacturing process deviation, makes when making semiconductor integrated circuit, can improve the alignment accuracy of every layer line road pattern.
The another technical problem that will solve of the present invention provides a kind of alignment mark of recoverable manufacturing process deviation, so that aiming at the mark that the position can not be offset to be provided.
According to the described technical problem that will solve, the invention provides a kind of alignment methods of alignment mark of recoverable manufacturing process deviation, its step is as follows: on the marked region of wafer, form at least three first grooves, to surround first polygon with first nodal point, described first groove be shaped as strip, and described strip has width and is gradually reduced to zero two ends, the both sides that link the straight line of this two end and strip are parallel to each other; Then, on wafer, deposit thin film, and this film forms second groove respectively in described first groove; Then, two ends of described second groove are coupled together with straight line, constitute second polygon with second central point; Again with second central point for aiming at the mark, described film is carried out photo-mask process.
According to the present invention's one preferred implementation, the external form of described first groove also can be the spindle with two-end-point.And described first and second polygon for example can be equilateral triangle, square or other polygon.
According to the present invention, in order to solve the technical problem, the alignment methods of the alignment mark of another kind of recoverable manufacturing process deviation is provided, its step is as follows: form at least two first grooves on the marked region of wafer, these first grooves be shaped as strip, and the bearing of trend of first groove intersects on first crosspoint, and wherein said strip has width and is gradually reduced to zero two ends, and the both sides that link the straight line of this two end and strip are parallel to each other; Then, on wafer, deposit thin film, and this film forms second groove respectively in described first groove; Then, two ends of described second groove are coupled together with straight line respectively, the straight line that connects two ends of described second groove intersects on second crosspoint; Again with second crosspoint for aiming at the mark, described film is carried out photo-mask process.
According to the present invention's one preferred implementation, the external form of described first groove also can be the spindle with two-end-point.
According to the present invention, in order to solve the technical problem, the alignment methods of the alignment mark of another recoverable manufacturing process deviation is provided, its step is as follows: form at least one first groove on the marked region of wafer, this first groove be shaped as a cross strip, this cross strip has width and is gradually reduced to zero four ends, and it is parallel to each other to link the both sides of first cross that two straight lines of two relative ends are constituted and this cross strip respectively; Then, on wafer, deposit thin film, and this film forms second groove respectively in described first groove; Then, two ends that described second groove is relative couple together with two straight lines respectively, constitute one second cross; Again with the central point of second cross for aiming at the mark, described film is carried out photo-mask process.
According to the present invention's one preferred implementation, the external form of described first groove also can be the cross spindle.
By as can be known described, the present invention uses to have width and is gradually reduced to the strip of zero two-end-point or fusiform groove as alignment mark.Also be zero characteristics by being positioned at the offset error that film caused on the groove when utilizing groove width to be zero with asymmetric profile thereupon, the scopodromic position of reproducing ground floor.So no matter be positioned at as the profile of the film of the groove of alignment mark top symmetry whether, can both find exactly aims at the mark carries out photo-mask process.
Description of drawings
For the technical problem that will solve of the present invention and other purpose, feature and advantage can be become apparent, a preferred implementation cited below particularly also engages accompanying drawing and elaborates.In the accompanying drawing:
Fig. 1 is the schematic top plan view of box alignment mark in the existing box;
Fig. 2 causes the asymmetric cross-sectional view of film profile for existing because of the cmp film;
Fig. 3 is the partial enlarged drawing of overlooking of the alignment mark of the present invention's one preferred implementation;
Fig. 4 is the schematic top plan view of the alignment mark of the present invention's one preferred implementation;
Fig. 5 is the schematic top plan view of the alignment mark of another preferred implementation of the present invention.
The drawing reference numeral explanation
100,200,300,400,500 wafers
110,130,140,210 square grooves
220 tungsten metal levels
230 metal levels
310,320,410,420,430,440,415,425,435,445,510,520 grooves
315,325,410a, 420a, 430a, 440a, 415a, 425a, 435a, 445a, 510a, 510b, 520a, 520b center line
450 squares
A1, A2 end
B1, B2 thickness
C1, C2, P1, P2 central point
P3, P4 crosspoint
Embodiment
In order to solve the problem that described prior art exists, that is aim at the mark, the invention provides a kind of alignment mark and alignment methods thereof of recoverable manufacturing process deviation because of the film that is positioned on the alignment mark has the problem that asymmetric profile is offset.
Please refer to Fig. 3, the figure shows the present invention's one preferred implementation a kind of alignment mark overlook partial enlarged drawing.In Fig. 3, in wafer 300, form groove 310 as alignment mark.Then in substrate 300, form thin film, and in groove 310, form groove 320 simultaneously.Owing to may there be all manufacturing process deviations, make that the profile of the film be arranged in groove 310 is asymmetric, cause the center line 325 of groove 320 and the center line 315 of groove 310 not to coincide together, unique exception is at the A2 place, because the width of groove 310 at the A1 place is zero, because of film covers the width of groove 320 at the A2 place that forms also is zero, and the midline shift amount that makes this place be caused because of the manufacturing process deviation also is zero.
Therefore, it is that zero a midline shift amount also is zero characteristics that the present invention utilizes described groove width, designs the profile as the groove of alignment mark.Especially exemplified by one for example down.See also Fig. 4, Fig. 4 is the schematic top plan view of the alignment mark of the present invention's one preferred implementation.In Fig. 4, lay respectively at foursquare four limits as four strip grooves 410,420,430,440 of alignment mark.These four grooves 410,420,430,440 all have width and are gradually reduced to zero two ends, center line 410a, the 420a of each groove 410,420,430,440,430a, 440a be two ends by groove 410,420,430,440 all respectively, and center line 410a, 420a, 430a, 440a constitute square 450.Square 450 central point is P1, with P1 as aiming at the mark.
Follow-up manufacturing process with the deposits tungsten metal, again carry out cmp, the manufacturing process of depositing metal layers is that example is described below then.Elder generation's deposits tungsten metal level on wafer 400; Carry out cmp then, will be higher than the tungsten metal removal on wafer 400 surfaces; Then, after wafer 400 surface deposition layer of metal, then form groove 415,425,435,445 respectively in groove 410,420,430,440, the center line of groove 415,425,435,445 is respectively 415a, 425a, 435a, 445a.
In Fig. 4, carrying out the grinding direction of cmp serves as reasons down supreme, the skew to some extent so position of groove 415,425,435,445 all makes progress cause center line 415a, the 435a of groove 415,435 all up to be offset, and center line 425a, the 445a of groove 425,445 is motionless.But, because the width of two ends of groove 415,425,435,445 is zero, so center line 415a, 425a, 435a, 445a also are zero in the side-play amount of two ends of groove 415,425,435,445, its result overlaps with center line 410a, 420a, 430a, the 440a of groove 410,420,430,440 for the straight line that connects 415,425,435,445 liang of ends of groove.That is to say, the straight line that connects 415,425,435,445 liang of ends of groove also constitutes square 450, so the position as the P1 that aims at the mark of the scopodromic center point P 2 of described metal level to be patterned and preceding one deck overlaps, thereby makes alignment accuracy no longer be subjected to the influence of manufacturing process deviation.
Because uneven two straight lines must have a crosspoint,, just have a crosspoint so need only the wherein center line of two grooves not parallel to each other in the groove 410,420,430,440 among Fig. 4.For example center line 410a, the 420a of groove 410,420 intersect at the P3 place, and the straight line that connects 415,425 liang of ends of groove is also in P3 place intersection, thus also can the P3 point for aiming at the mark.Lifting a particular example below describes.
Please refer to Fig. 5, it is the schematic top plan view of the alignment mark of another preferred implementation of the present invention.In Fig. 5, cross groove 510 is arranged as alignment mark in the wafer 500, center line 510a, the 510b on this criss-cross both direction intersects at the P3 place, and this is a groove 415 and groove 425 decussate special statuss among described Fig. 4.
Similarly,, on wafer 500, deposit thin film, in groove 510, form groove 520 through some manufacturing processes.The asymmetric situation hypothesis of this film profile is the same with Fig. 4, and then the center line 520a of groove 520 overlaps with the center line 510a of groove 510, and the center line 520b of groove 520 is offset to the top of the center line 510b of groove 510.So the center line 520a of groove 520 and 520b intersect at the P4 place, P4 and P3 do not overlap.But if directly two ends of the turnoff opposite side of groove 520 are linked to each other with straight line, then this two straight line just is center line 510a and 510b, and the crosspoint of this two straight line also is P3.So when before this film is carried out photo-mask process, wanting aligned pattern,, find out crosspoint P3 and be used as aiming at the mark and carry out the aligning of high accuracy as long as groove 520 relative two ends are linked to each other with straight line respectively.
In addition, because design of the present invention is to use and has the groove that width is gradually reduced to zero two ends and be used as alignment mark, so groove shape is not limited to illustrated strip groove in the preferred implementation of the present invention.Also can adopt other groove, for example fusiform groove with described character shape.As long as so have both direction groove not parallel to each other at least, and these two grooves have width and are gradually reduced to two zero ends to draw the straight line of fixed position, and the crosspoint of at least two straight lines of then being drawn promptly can be used as the usefulness that aims at the mark of photo-mask process.
By the preferred embodiment for the present invention as can be known, the present invention uses and to have width and be gradually reduced to the strip of zero two-end-point or fusiform groove as alignment mark.Also be zero characteristics by being positioned at the offset error that film caused on the groove when utilizing groove width to be zero with asymmetric profile thereupon, the scopodromic position of reproducing ground floor.So no matter be positioned at as the profile of the film of the groove of alignment mark top symmetry whether, can both find exactly aims at the mark carries out photo-mask process.
Though the present invention discloses as above with preferred implementation; but this is not to be limitation of the present invention; those of ordinary skill in the art is under the prerequisite that does not exceed design of the present invention and desired protection range; can make various remodeling and retouching, so protection scope of the present invention should be as the criterion with the claimed scope of appending claims.
Claims (19)
1. the alignment methods of the alignment mark of a recoverable manufacturing process deviation, this alignment methods comprises:
On a marked region of a wafer, form at least three first grooves, described first groove be shaped as a strip, and these first grooves surround first polygon with first nodal point, wherein said strip has width and is gradually reduced to zero two ends, and it is parallel to each other to link the both sides of the straight line of described two ends and described strip;
Deposition one film on described wafer, and this film forms second groove respectively in described first groove;
Two ends of described second groove are coupled together with straight line, constitute second polygon with second central point; And
With this second central point is one to aim at the mark, and described film is carried out photo-mask process.
2. alignment methods as claimed in claim 1, wherein said first groove is a spindle.
3. alignment methods as claimed in claim 1, wherein said first and second polygon is an equilateral triangle.
4. alignment methods as claimed in claim 1, wherein said first and second polygon are square.
5. alignment methods as claimed in claim 1, wherein said film comprises a metallic film.
6. the alignment methods of the alignment mark of a recoverable manufacturing process deviation, this alignment methods comprises:
On a marked region of a wafer, form at least two first grooves, described first groove be shaped as a strip, and the bearing of trend of described first groove intersects on first crosspoint, wherein this strip has width and is gradually reduced to zero two ends, and it is parallel to each other to link the both sides of the straight line of described two ends and this strip;
Deposition one film on described wafer, and this film forms second groove respectively in described first groove;
Two ends of described second groove are coupled together with straight line respectively, and the straight line that connects two ends of described second groove intersects on second crosspoint; And
With described second crosspoint is one to aim at the mark, and described film is carried out photo-mask process.
7. alignment methods as claimed in claim 6, wherein said first groove is a spindle.
8. alignment methods as claimed in claim 6, wherein said film comprises a metallic film.
9. the alignment methods of the alignment mark of a recoverable manufacturing process deviation, this alignment methods comprises:
On a marked region of a wafer, form at least one first groove, this first groove be shaped as a cross strip, this cross strip has width and is gradually reduced to zero four ends, and it is parallel to each other to link the both sides of first cross that two straight lines of relative described two ends are constituted and this cross strip respectively;
Deposition one film on described wafer, and this film forms second groove in described first groove;
Two ends that described second groove is relative couple together with two straight lines respectively, constitute one second cross; And
With the central point of this second cross is one to aim at the mark described film is carried out photo-mask process.
10. alignment methods as claimed in claim 9, wherein said first groove are a cross spindle.
11. alignment methods as claimed in claim 9, wherein said film comprises a metallic film.
12. the alignment mark of a recoverable manufacturing process deviation, this alignment mark comprises:
Be positioned at least three first grooves on the marked region of a wafer, described first groove be shaped as a strip, and described first groove surrounds first polygon with first nodal point, wherein said strip has width and is gradually reduced to zero two ends, and it is parallel to each other to link the both sides of the straight line of described two ends and described strip.
13. alignment mark as claimed in claim 12, wherein said first groove is a spindle.
14. alignment mark as claimed in claim 12, wherein said first and second polygon is an equilateral triangle.
15. alignment mark as claimed in claim 12, wherein said first and second polygon are square.
16. the alignment mark of a recoverable manufacturing process deviation, this alignment mark comprises:
Be positioned at least two first grooves on the marked region of a wafer, described first groove be shaped as a strip, and the bearing of trend of described first groove intersects on first crosspoint, wherein said strip has width and is gradually reduced to zero two ends, and it is parallel to each other to link the both sides of the straight line of described two ends and described strip.
17. alignment mark as claimed in claim 16, wherein said first groove is a spindle.
18. the alignment mark of a recoverable manufacturing process deviation, this alignment mark comprises:
Be positioned at least one first groove on one of the wafer marked region, this first groove be shaped as a cross strip, this cross strip has width and is gradually reduced to zero four ends, and it is parallel to each other to link the both sides of first cross that two straight lines of relative described two ends are constituted and described cross strip respectively.
19. alignment mark as claimed in claim 18, wherein said first groove are a cross spindle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101007226A CN100382229C (en) | 2003-10-08 | 2003-10-08 | Aligning marker capable of correcting manufacturing deviation and aligning method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101007226A CN100382229C (en) | 2003-10-08 | 2003-10-08 | Aligning marker capable of correcting manufacturing deviation and aligning method thereof |
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| CN1606124A CN1606124A (en) | 2005-04-13 |
| CN100382229C true CN100382229C (en) | 2008-04-16 |
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| CNB2003101007226A Expired - Fee Related CN100382229C (en) | 2003-10-08 | 2003-10-08 | Aligning marker capable of correcting manufacturing deviation and aligning method thereof |
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| CN116504757B (en) * | 2023-06-30 | 2023-09-19 | 合肥晶合集成电路股份有限公司 | Lithographic alignment mark structure and semiconductor structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1284744A (en) * | 1999-08-16 | 2001-02-21 | 台湾积体电路制造股份有限公司 | Wafer defect detecting and characteristics analyzing method |
| US6309943B1 (en) * | 2000-04-25 | 2001-10-30 | Amkor Technology, Inc. | Precision marking and singulation method |
| CN1329357A (en) * | 2000-06-08 | 2002-01-02 | 株式会社东芝 | Aligning method, alignment checking method and photomask |
| US6340547B1 (en) * | 2000-01-11 | 2002-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd | Method of forming circuit patterns on semiconductor wafers using two optical steppers having nonaligned imaging systems |
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2003
- 2003-10-08 CN CNB2003101007226A patent/CN100382229C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1284744A (en) * | 1999-08-16 | 2001-02-21 | 台湾积体电路制造股份有限公司 | Wafer defect detecting and characteristics analyzing method |
| US6340547B1 (en) * | 2000-01-11 | 2002-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd | Method of forming circuit patterns on semiconductor wafers using two optical steppers having nonaligned imaging systems |
| US6309943B1 (en) * | 2000-04-25 | 2001-10-30 | Amkor Technology, Inc. | Precision marking and singulation method |
| CN1329357A (en) * | 2000-06-08 | 2002-01-02 | 株式会社东芝 | Aligning method, alignment checking method and photomask |
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