CN100376992C - Manufacturing method for common electrode of liquid crystal display device - Google Patents
Manufacturing method for common electrode of liquid crystal display device Download PDFInfo
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- CN100376992C CN100376992C CNB2005100336418A CN200510033641A CN100376992C CN 100376992 C CN100376992 C CN 100376992C CN B2005100336418 A CNB2005100336418 A CN B2005100336418A CN 200510033641 A CN200510033641 A CN 200510033641A CN 100376992 C CN100376992 C CN 100376992C
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- liquid crystal
- photoresist layer
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- display device
- crystal display
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Abstract
The present invention provides a manufacturing method for a common electrode of a liquid crystal display device, which comprises the following procedures: providing a base plate; coating a photoresist layer on the regions of a plurality of parts of the base plate; forming a transparent conducting layer of which the part forms on the photoresist layer; removing the photoresist layer and the transparent conducting layer part which is covered on the photoresist layer.
Description
[technical field]
The present invention relates to a kind of LCD device preparation method, relate in particular to the manufacture method of public electrode in a kind of liquid crystal indicator.
[background technology]
Liquid crystal indicator is a kind of in the flat display apparatus, and it not only is used widely in the notebook field through in decades development, also occupies increasing share in monitor, TV and desktop PC field.
Liquid crystal indicator comprises upper substrate, infrabasal plate and is arranged at liquid crystal layer between two substrates, its utilization is arranged in the pixel electrode of infrabasal plate and is positioned at the deflection of the liquid crystal molecule of the electric field controls liquid crystal layer that produces between the public electrode of upper substrate, to reach the purpose that makes the liquid crystal indicator display image.General public electrode is a plane electrode, and its manufacture method only need cover a transparency conducting layer on glass substrate, and this transparency conducting layer is ITO (tin indium oxide) layer or IZO (indium zinc oxide) layer.
See also Fig. 1, be the process flow diagram of the upper substrate manufacture method of liquid crystal indicator.The upper substrate of this liquid crystal indicator is colored filter substrate, and its manufacture method may further comprise the steps:
Step 1 a: glass substrate is provided;
Step 2: apply black matrix;
Step 3: apply colored filter;
Step 4: sputter one transparency conducting layer, with as public electrode.
For accurately controlling the deflection of liquid crystal molecule, can there be a plurality of breach in this transparency conducting layer, and promptly this transparency conducting layer has a plurality of fractures place.Then, should have a plurality of fractures place for above-mentioned steps four formed transparency conducting layers.Therefore, the manufacture method of this public electrode is specifically extremely shown in Figure 7 as Fig. 2, and wherein Fig. 2 is the process flow diagram of this public electrode manufacture method, and Fig. 3 to Fig. 7 is the concrete manufacture method synoptic diagram of this public electrode: the manufacture method of this public electrode may further comprise the steps:
Step 1: sputter one transparency conducting layer;
See also Fig. 3; on glass substrate 10, form successively black matrix 11 (BlackMatrix, BM), colored filter 12 (Color Filter, CF) and protective seam 13 (OeCota; OC), this protective seam 13 adopts allyl resin or epoxy resin material to make.On this basis, sputter last layer transparency conducting layer 14, this transparency conducting layer 14 adopts tin indium oxide or indium zinc oxide material.
Step 2: apply a photoresist layer;
See also Fig. 4, apply a photoresist layer 15 on transparency conducting layer 14, this photoresist layer 15 adopts positive resistance material.
Step 3: light shield develops;
See also Fig. 5, utilize laser to need fracture place to shine this position, photoresist layer 15 bonds at this place are interrupted, utilize acid solution to develop again, remove the photoresist layer 15 at this place, form peristome 16 at transparency conducting layer 14.
Step 4: etching;
See also Fig. 6, adopt dry ecthing or wet etching process to etch open the transparency conducting layer 14 at oral area 16 places, make transparency conducting layer 14, form fracture place 17 in fracture herein.
Step 5: light shield develops;
See also Fig. 7, the light shield remaining photoresist layer 15 that develops is removed remaining photoresist layer 15, forms the public electrode with fracture place 17.
But the method that this kind made public electrode in the liquid crystal indicator needs twice light shield operation and one etching work procedure, and processing procedure is comparatively complicated, and light shield and etching work procedure cost are higher, so this kind manufacture method cost is also higher.
[summary of the invention]
Comparatively complicated for the method processing procedure that overcomes public electrode in the existing manufacturing liquid crystal indicator, the cost problem of higher provides a kind of processing procedure more simple, and the manufacture method of public electrode is necessary in fact in the lower-cost liquid crystal indicator.
A kind of technical scheme that solves this technical problem is: a kind of manufacture method of common electrode of liquid crystal display device is provided, and it may further comprise the steps: a substrate is provided; On a plurality of subregions of this substrate, apply a photoresist layer; Form a transparency conducting layer, this transparency conducting layer subregion is formed on the photoresist layer; Remove photoresist layer, remove the electrically conducting transparent layer segment that is covered on the photoresist layer simultaneously.
Compare with the manufacture method of existing common electrode of liquid crystal display device, because the manufacture method of this technical scheme common electrode of liquid crystal display device is to apply photoresistance earlier, sputter transparency conducting layer again, when removing photoresistance, the transparency conducting layer that is covered on the photoresistance can be removed, public electrode can be formed with a plurality of fractures place.This kind manufacture method does not need etching work procedure, and can reduce the light shield operation, and therefore, this kind manufacture method is more simple, and can reduce manufacturing cost greatly.
[description of drawings]
Fig. 1 is a kind of manufacture method process flow diagram of prior art liquid crystal indicator colored filter substrate.
Fig. 2 is a kind of manufacture method process flow diagram of prior art common electrode of liquid crystal display device.
Fig. 3 to Fig. 7 is the concrete manufacture method synoptic diagram of above-mentioned prior art common electrode of liquid crystal display device.
Fig. 8 is the manufacture method process flow diagram of first embodiment of the invention common electrode of liquid crystal display device.
Fig. 9 to Figure 11 is the manufacture method synoptic diagram of first embodiment of the invention common electrode of liquid crystal display device.
[embodiment]
See also Fig. 8 to Figure 11, it is the manufacture method synoptic diagram of the public electrode of the first embodiment liquid crystal indicator, wherein, Fig. 8 is the public electrode manufacture method process flow diagram of this first embodiment liquid crystal indicator, and Fig. 9 to Figure 11 is the concrete manufacture method synoptic diagram of the public electrode of this first embodiment liquid crystal indicator.
The manufacture method of the public electrode of this liquid crystal indicator may further comprise the steps:
Step 1: apply a photoresist layer;
See also Fig. 9, form black matrix 110, colored filter 120 and protective seam 130 successively on glass substrate 100, this protective seam 130 adopts allyl resin or epoxy resin material to make.On this basis, apply a photoresist layer 150, and this photoresist layer only is coated on the zone that public electrode need rupture, this photoresist layer 150 adopts positive resistance material, this photoresist layer 150 has certain thickness, so this photoresist layer 150 is a trapezium structure, and this trapezium structure gradient is bigger, promptly the following base angle angle of this trapezium structure is bigger, levels off to 90 °.
Step 2: sputter one transparency conducting layer;
See also Figure 10, sputter one transparency conducting layer 140 on the basis of step 1, this transparency conducting layer 140 adopts tin indium oxide or indium zinc oxide material, and this sputter process adopts the certain even sputter layer of transparent of speed conductive layer 140.Applying photoresist layer 150 places, this transparency conducting layer 140 covers photoresist layer 150, because this photoresist layer 150 is a trapezium structure, this trapezium structure gradient is bigger, and the sputter process adopts fixing speed, the hypotenuse of this trapezium structure is longer, therefore, for this zone, the thickness of this transparency conducting layer 140 should be thin more many than other regional thickness, and since the thickness of transparency conducting layer 140 itself just as thin as a wafer, be generally less than 1 micron, then, the thickness of the transparency conducting layer 140 on the sputter of place, the hypotenuse of this trapezium structure zone is minimum, and is prone to the part 141 and 142 of fracture.
Step 3: light shield develops;
See also Figure 11, with this photoresist layer 150 of laser radiation, because it is minimum to cover transparency conducting layer 140 thickness of this photoresist layer 150, and be prone to the part 141 and 142 of fracture, therefore, after this photoresist layer 150 Stimulated Light irradiation, its bond is interrupted, and utilizes this photoresist layer 150 of acid solution solubilized during development, and can get rid of the transparency conducting layer 140 that is covered on the photoresist layer 150, make transparency conducting layer 140 form fracture place 160, then form public electrode with a plurality of fractures place 160.
Only need the light shield operation one because this kind made the public electrode method of liquid crystal indicator, compare with prior art, can save one etching and one light shield operation, therefore, this manufacture method is comparatively simple, and cost is lower.
The manufacture method and first embodiment of second embodiment manufacturing common electrode of liquid crystal display device are roughly the same, its difference is that photoresist layer 150 adopts negative resistance material, therefore in above-mentioned third step, do not need laser radiation, utilize acid solution can remove this photoresist layer 150, form public electrode with fracture place.Then, this embodiment can save one etching and twice light shield operation, and therefore, this manufacture method is more simple, and cost is lower.
Claims (10)
1. the manufacture method of a common electrode of liquid crystal display device, it may further comprise the steps: a substrate is provided; On a plurality of subregions of this substrate, apply a photoresist layer; Form a transparency conducting layer on this substrate, this transparency conducting layer subregion is formed on the photoresist layer; Remove photoresist layer, remove the electrically conducting transparent layer segment that covers on the photoresist layer simultaneously.
2. the manufacture method of common electrode of liquid crystal display device as claimed in claim 1; it is characterized in that: also be disposed with black matrix, colored filter and protective seam on this substrate; this photoresist layer covers this protective seam part surface, and this transparency conducting layer covers this protective seam and this photoresist layer.
3. the manufacture method of common electrode of liquid crystal display device as claimed in claim 1 is characterized in that: this transparency conducting layer adopts sputtering way to be formed on the substrate.
4. the manufacture method of common electrode of liquid crystal display device as claimed in claim 3 is characterized in that: the speed of this transparency conducting layer of sputter is certain value in the sputter process.
5. the manufacture method of common electrode of liquid crystal display device as claimed in claim 1 is characterized in that: this transparency conducting layer employing tin indium oxide material.
6. the manufacture method of common electrode of liquid crystal display device as claimed in claim 1 is characterized in that: this transparency conducting layer employing indium zinc oxide material.
7. the manufacture method of common electrode of liquid crystal display device as claimed in claim 1, it is characterized in that: this photoresist layer adopts positive resistance material.
8. the manufacture method of common electrode of liquid crystal display device as claimed in claim 7 is characterized in that: when removing photoresist layer, utilize this positive photoresist layer of laser radiation, its bond is interrupted, utilize acid leach solution to remove this photoresist layer again.
9. the manufacture method of common electrode of liquid crystal display device as claimed in claim 1 is characterized in that: the negative resistance material of this photoresist layer employing.
10. the manufacture method of common electrode of liquid crystal display device as claimed in claim 9 is characterized in that: directly utilize this photoresist layer of acid leach solution, remove this photoresist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100336418A CN100376992C (en) | 2005-03-12 | 2005-03-12 | Manufacturing method for common electrode of liquid crystal display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100336418A CN100376992C (en) | 2005-03-12 | 2005-03-12 | Manufacturing method for common electrode of liquid crystal display device |
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| CN1831618A CN1831618A (en) | 2006-09-13 |
| CN100376992C true CN100376992C (en) | 2008-03-26 |
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| CNB2005100336418A Expired - Fee Related CN100376992C (en) | 2005-03-12 | 2005-03-12 | Manufacturing method for common electrode of liquid crystal display device |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102627823B (en) * | 2011-08-10 | 2015-10-21 | 京东方科技集团股份有限公司 | Transparent conductive resin, color membrane substrates and making method, liquid crystal indicator |
| TWI467653B (en) * | 2011-09-07 | 2015-01-01 | Au Optronics Corp | Method of forming patterned conductive oxide layer and etching apparatus |
| CN105278182A (en) * | 2015-11-17 | 2016-01-27 | 昆山龙腾光电有限公司 | Liquid crystal display panel and manufacture method thereof |
| CN108828844B (en) * | 2018-06-15 | 2021-03-23 | 深圳市华星光电半导体显示技术有限公司 | Film forming method for reducing warping of mother board |
| CN114336276B (en) * | 2022-03-15 | 2022-07-12 | 度亘激光技术（苏州）有限公司 | Manufacturing method of electrode contact window and manufacturing method of semiconductor structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191835B1 (en) * | 1997-04-18 | 2001-02-20 | Hyundai Electronics Industries Co., Ltd. | Thin film transistor liquid crystal display and method for manufacturing the same |
| US20030197825A1 (en) * | 2002-04-19 | 2003-10-23 | Lee Seok Lyul | IPS-LCD device with a color filter formed on an array substrate |
| US20040196421A1 (en) * | 2003-04-04 | 2004-10-07 | Han-Wook Hwang | Transflective LCD device and fabrication method thereof |
| US20040233359A1 (en) * | 2003-05-23 | 2004-11-25 | Lg. Philips Lcd Co., Ltd. | Transflective liquid crystal display device and fabricating method thereof |
-
2005
- 2005-03-12 CN CNB2005100336418A patent/CN100376992C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191835B1 (en) * | 1997-04-18 | 2001-02-20 | Hyundai Electronics Industries Co., Ltd. | Thin film transistor liquid crystal display and method for manufacturing the same |
| US20030197825A1 (en) * | 2002-04-19 | 2003-10-23 | Lee Seok Lyul | IPS-LCD device with a color filter formed on an array substrate |
| US20040196421A1 (en) * | 2003-04-04 | 2004-10-07 | Han-Wook Hwang | Transflective LCD device and fabrication method thereof |
| US20040233359A1 (en) * | 2003-05-23 | 2004-11-25 | Lg. Philips Lcd Co., Ltd. | Transflective liquid crystal display device and fabricating method thereof |
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| CN1831618A (en) | 2006-09-13 |
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