CN100376721C - Chemical etching solution for molybdenum - Google Patents

Chemical etching solution for molybdenum Download PDF

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Publication number
CN100376721C
CN100376721C CNB2005100448536A CN200510044853A CN100376721C CN 100376721 C CN100376721 C CN 100376721C CN B2005100448536 A CNB2005100448536 A CN B2005100448536A CN 200510044853 A CN200510044853 A CN 200510044853A CN 100376721 C CN100376721 C CN 100376721C
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CN
China
Prior art keywords
molybdenum
concentration
solution
nitric acid
sulfuric acid
Prior art date
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Expired - Fee Related
Application number
CNB2005100448536A
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Chinese (zh)
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CN1743509A (en
Inventor
徐海波
王佳
王伟
姜应律
王燕华
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Ocean University of China
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Ocean University of China
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Publication of CN1743509A publication Critical patent/CN1743509A/en
Application granted granted Critical
Publication of CN100376721C publication Critical patent/CN100376721C/en
Expired - Fee Related legal-status Critical Current
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Abstract

The present invention relates to chemical etching solution for molybdenum, which is composed of sulfuric acid, nitric acid and water, wherein the volume percentage ranges of the sulfuric acid, the nitric acid and the water are respectively from 5% to 35%, from 5% to 25 %, and from 40% to 90%, the concentration of the sulfuric acid is from 95% to 98%, and the concentration of the nitric acid is from 65% to 68%. The etching solution for molybdenum can also contain an additive of disodium edta, and the concentration of the additive is from 0.01 g/L to 1 g/L. The etching solution of the present invention can be used under the normal temperature. The etching solution for molybdenum has the advantages of high etching speed, small lateral erosion, long service life, low processing cost, etc. The rapid etching to molybdenum can be realized even in the rest solution.

Description

The chemical etching liquor that is used for molybdenum
Technical field
The present invention relates to a kind of chemical etching liquor, particularly relate to a kind of chemical etching liquor that is applicable to molybdenum.
Background technology
Chemical milling is to utilize the corrosive nature of chemical solution that unwanted metal is dissolved the process of removing fast by chemical reaction.The basic procedure of chemical milling is: the original metal part is carried out conventional cleaning and oil removing make cleaning surfaces, and then at its surface-coated photoresist material, and according to processing pattern carry out the exposure of photoresist material, then develop and the post bake processing, the metal that utilizes the chemical etching liquor corrosion to expose again, after treating that corrosion process finishes, the glue with the surface removes with strong alkali solution again, and last water cleans up and obtains etching and processing workpiece product.
Present existing chemical etching liquor mainly is the chemical etching liquor at the processing of metal superfines such as stainless steel, copper, nickel, and does not appear in the newspapers as yet for the chemical etching liquor of molybdenum.Because metal molybdenum has high anti-corrosion, high thermal resistance, high conductivity and high-wearing feature, its use as special type function material is very extensive, but because its high rigidity is difficult to the mechanical workout microtexture, and the requirement that relates to microfabrication at present increases just gradually, and the demand of chemical etching liquor that for this reason is used for molybdenum is also urgent day by day.
Summary of the invention
The purpose of this invention is to provide a kind of chemical etching liquor that is used for molybdenum, it can satisfy the demand of prior art.
A kind of chemical etching liquor that is used for molybdenum is characterized in that being made up of sulfuric acid, nitric acid and water, and their percent by volume scope is sulfuric acid 5%-35%, nitric acid 5%-25%, water 40%-90%; Described sulfuric acid concentration is that the concentration of 95%-98%, nitric acid is 65%-68%.
Advantages such as etching solution of the present invention can use at normal temperatures, and it is fast to have corrosion speed, and lateral erosion is little, and solution long service life and tooling cost are low are even also can realize the fast-etching of molybdenum in static solution.
Embodiment
Embodiment 1:
With 50 milliliters sulfuric acid (98% (weight percentage, solution down together), density 1.84), 150 milliliters nitric acid (67% solution, density 1.40) mix with 800 milliliters water, the etching solution of gained is carried out chemical milling by existing etch process to molybdenum electrode plate (the pole plate parts of fuel cell).Etch temperature is 30 ℃, static being immersed in this etching solution of molybdenum electrode plate that 0.1mm is thick during operation, and about 7 minutes mashed the wearing of post-etching, its minimum line directly is 0.12mm, the aperture is  0.18mm.Can reach every liter of dissolving 60 gram molybdenums the work-ing life of this etching solution.
Embodiment 2:
With 350 milliliters sulfuric acid (98% solution, density 1.84), 200 milliliters nitric acid (67% solution, density 1.40) mixes with 450 milliliters water, and the etching solution of gained is carried out chemical milling by existing etch process to molybdenum electrode plate (the pole plate parts of fuel cell).Etch temperature is 20 ℃, static being immersed in this solution of molybdenum electrode plate that 0.8mm is thick during operation, and about 50 minutes mashed the wearing of post-etching, its minimum line directly is 0.96mm, the aperture is  1.5mm.
Embodiment 3:
With 50 milliliters sulfuric acid (98% solution, density 1.84), 150 milliliters nitric acid (67% solution, density 1.40), 0.5g the water of EDTA and 800 milliliters mixes, and the etching solution of gained is carried out chemical milling by existing etch process to molybdenum electrode plate (the pole plate parts of fuel cell).Etch temperature is 25 ℃, static being immersed in this solution of molybdenum electrode plate that 0.1mm is thick during operation, and about 7 minutes mashed the wearing of post-etching, its minimum line directly is 0.12mm, the aperture is  0.18mm.Can reach every liter of dissolving 98 gram molybdenums the work-ing life of this solution.
Used sulfuric acid is the commercially available vitriol oil among the present invention, and its concentration is 95%-98%; Used nitric acid is commercially available concentrated nitric acid, and its concentration is 65%-68%.
For can add a small amount of complexing agent disodium ethylene diamine tetraacetate (EDTA) work-ing life that prolongs solution, consumption is in 0.01 ~ 1g/L scope; The use temperature scope of this chemical etching liquor is 20 ~ 40 ℃, can adopt two kinds of processing modes in immobilized or mobile chemical etching liquor, and when add man-hour in the static solution of 25 ℃ of use temperatures, the chemical milling speed of molybdenum is 8 microns/minute.
This etching solution can be widely used in the chemical milling course of processing of the important components and parts of electronic industry, optics measurement instrument industry, petrochemical industry, pharmaceutical equipment industry, nuclear industry, semiconductor machining industry, fuel cell and military equipment etc. and structural part.

Claims (2)

1. a chemical etching liquor that is used for molybdenum is characterized in that being made up of sulfuric acid, nitric acid and water, and their percent by volume scope is sulfuric acid 5%-35%, nitric acid 5%-25%, water 40%-90%; Used sulfuric acid concentration is that the concentration of 95%-98%, nitric acid is 65%-68%.
2. chemical etching liquor that is used for molybdenum, it is characterized in that it is made up of sulfuric acid, nitric acid, water and disodium ethylene diamine tetraacetate, wherein the vitriolic volumn concentration is that the volumn concentration of 5%-35%, nitric acid is that the volumn concentration of 5%-25%, water is that the concentration of 40%-90%, disodium ethylene diamine tetraacetate is 0.01-1g/L; Used sulfuric acid concentration is that the concentration of 95%-98%, nitric acid is 65%-68%.
CNB2005100448536A 2005-09-21 2005-09-21 Chemical etching solution for molybdenum Expired - Fee Related CN100376721C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2005100448536A CN100376721C (en) 2005-09-21 2005-09-21 Chemical etching solution for molybdenum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2005100448536A CN100376721C (en) 2005-09-21 2005-09-21 Chemical etching solution for molybdenum

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CN1743509A CN1743509A (en) 2006-03-08
CN100376721C true CN100376721C (en) 2008-03-26

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104060267A (en) * 2014-07-17 2014-09-24 深圳市卓力达电子有限公司 Chemical etching method used for metal molybdenum plate
CN108754497A (en) * 2018-07-02 2018-11-06 景瓷精密零部件(桐乡)有限公司 A kind of the etching formula of liquid and production method of Molybdenum grid product
CN111876781B (en) * 2020-06-22 2023-02-17 成都虹波实业股份有限公司 Etching solution for thick molybdenum plate and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000309889A (en) * 1999-03-17 2000-11-07 Shipley Co Llc Water base composition increasing surface area of metallic surface
JP2002208704A (en) * 2001-01-09 2002-07-26 Hitachi Ltd Method of manufacturing thin-film transistor and etching liquid therefor
JP2004068068A (en) * 2002-08-05 2004-03-04 Nippon Parkerizing Co Ltd Combined material and method for producing the same
CN1510169A (en) * 2002-12-12 2004-07-07 Lg.菲利浦Lcd株式会社 Etching solution for multi-layer copper and molybdenum and etching method therewith
CN1575509A (en) * 2001-10-22 2005-02-02 三菱瓦斯化学株式会社 Etching method for aluminum-molybdenum laminate film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000309889A (en) * 1999-03-17 2000-11-07 Shipley Co Llc Water base composition increasing surface area of metallic surface
JP2002208704A (en) * 2001-01-09 2002-07-26 Hitachi Ltd Method of manufacturing thin-film transistor and etching liquid therefor
CN1575509A (en) * 2001-10-22 2005-02-02 三菱瓦斯化学株式会社 Etching method for aluminum-molybdenum laminate film
JP2004068068A (en) * 2002-08-05 2004-03-04 Nippon Parkerizing Co Ltd Combined material and method for producing the same
CN1510169A (en) * 2002-12-12 2004-07-07 Lg.菲利浦Lcd株式会社 Etching solution for multi-layer copper and molybdenum and etching method therewith

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