CN100373319C - Adaptive SD memory card - Google Patents
Adaptive SD memory card Download PDFInfo
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- CN100373319C CN100373319C CNB2006100491988A CN200610049198A CN100373319C CN 100373319 C CN100373319 C CN 100373319C CN B2006100491988 A CNB2006100491988 A CN B2006100491988A CN 200610049198 A CN200610049198 A CN 200610049198A CN 100373319 C CN100373319 C CN 100373319C
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Abstract
The present invention discloses a self-adjusting SD storage card which comprises an SD interface unit, a controller and a storage module, wherein one end of the SD interface unit is connected with an external host machine and the other end is connected with the controller; the controller is connected with the storage module via a bus; the controller has the self-adjusting function. The storage card of the present invention can automatically adjust to a corresponding edition according to the host machine, can simultaneously support SD 2.0 and SD 1.1 / SD 1.0 specifications and can simultaneously support two types of read-and-write modes of SD specifications, such as a high capacity read-and-write mode and a standard capacity read-and-write mode. The present invention solves the problem that a common SD 2.0 high capacity storage card can not be correctly read and written by an SD 1.0 / SD 1.1 host machine.
Description
Technical field
The present invention relates to a kind of storage card, be meant a kind of adaptive SD memory card that can be adjusted into respective version automatically especially according to main frame.
Background technology
With SD2.0 standard and SD1.1/SD1.0 standard is the SD storage card of data transmission standard, is widely used in recent years developing very fast in the consumer electronics series products such as digital camera, mobile phone, PDA, MP3/MP4 player.
The SD storage card of SD2.0 standard and SD1.1/SD1.0 standard defined has two kinds, normal capacity (Standard Capacity) SD storage card and high power capacity (High Capacity) SD storage card.The SD storage card of normal capacity defines in the SD1.1/SD1.0 standard, supports the read-write of standard mode; The storage card of high power capacity defines in the SD2.0 standard, supports the read-write of high power capacity mode.
Communication in SD2.0 standard and the SD1.1/SD1.0 standard between regulation main frame and the storage card is finished by order (Command is called for short CMD) and response (Response is called for short R).Main frame is visited storage card by CMD, and storage card is by corresponding responsive feedback main frame.
Meeting CMD that the main frame of SD2.0 standard and SD1.1/SD1.0 standard sends, to have a fixing code length be 48 bits, the form of CMD such as following table:
| Bit | 47 | 46 | 45∶40 | 39∶8 | 7∶1 | 0 |
| Bit number | 1 | 1 | 6 | 32 | 7 | 1 |
| Code value | ‘0’ | ‘1’ | X | X | X | ‘1’ |
| Describe | Beginning | Transmission direction | The CMD index | The CMD parameter | CRC7 | Finish |
Each CMD begins with a beginning bit, finishes with end bit, represents CMD from beginning 48 bits of bit to end bit with Bit47 to Bit0, is explained as follows for each bit of CMD:
Bit47 is beginning bit (Start Bit), and this position always is ' 0 ';
Bit46 is transmission direction bit (Transmit Bit), and in CMD, this position always is ' 1 ', and the direction of transfer of expression data is that main frame transmits to card;
Bit45 is the index (Index) of CMD to Bit40.As CMD8, these 6 bits are 6 ' b001000;
Bit39 is the parameter (Argument) of CMD to Bit8, and each CMD respectively has definition to these 32 bits;
Bit7 is CRC (the Cyclic Redundancy Code) check code of 7 bits to Bit1;
Bit0 is end bit (End Bit), and this position always is ' 1 '.
Regulation internal storage access order (MemoryAccessCMD) in SD2.0 standard and the SD1.1/SD1.0 standard is represented data address (Data Address) as reading and writing, the Argument that CMD such as wipes.
In the read-write mode of normal capacity, the represented data address of the Argument of CMD is a unit with 1 byte (Byte), and 32 bits can represent 2 at most
32Byte, i.e. 4G byte is so the read-write mode of normal capacity can be supported the card of 4G byte at most.The card of required standard capacity is supported the 2G byte in SD2.0 standard and the SD1.1/SD1.0 standard.
In the read-write mode of high power capacity, the represented data address of the Argument of CMD is a unit with 512 bytes, and such 32 bits can represent 2 at most
32* 512 bytes, i.e. 2T byte is so the read-write mode of high power capacity can be supported the card of 2T byte at most.Regulation high power capacity card is supported the 32G byte in the SD2.0 standard.
In view of the foregoing, high-capacity memory cards and normal capacity storage card are different because of the explanation to the Argument of CMD, so these two kinds of storage cards are also different to the availability of main frame, as shown in Figure 1, communication between the main frame of high power capacity card and SD1.x is invalid, that is to say, the low capacity storage card can be supported the main frame of the SD2.0 of high power capacity and two kinds of read-write modes of normal capacity correctly to read and write simultaneously, but high-capacity memory cards can not only be supported the main frame read-write of the SD1.x of normal capacity read-write mode.
Summary of the invention
The invention provides a kind of can be according to the self-adjusting adaptive SD memory card of the read-write mode of main frame, this SD storage card can be supported SD2.0 standard and SD1.1/SD1.0 standard simultaneously, also can support two kinds of read-write modes of SD standard main frame simultaneously: high power capacity read-write mode and normal capacity read-write mode.
Adaptive memory card of the present invention can be made corresponding adjustment according to the main frame of different specification in the identifying of main frame to card: at the host platform of SD1.1/SD1.0 standard, the parameter setting that card is enabled SD1.1, support the SD1.1/SD1.0 standard, support the main frame of SD1.1/SD1.0 standard it to be carried out read and write access with standard mode; At the host platform of SD2.0 standard, the SD2.0 standard is supported in the parameter setting that card is enabled SD2.0, and card is adjusted into corresponding card automatically according to main frame.If main frame is supported the high power capacity read-write mode, block the corresponding high power capacity card that is adjusted into, support that main frame carries out read and write access with the high power capacity mode to it; If main frame is not supported high power capacity, block the corresponding normal capacity card that is adjusted into, support that main frame carries out read and write access with standard mode to it.
A kind of adaptive SD memory card, comprise SD boundary element, controller and memory module, SD boundary element one end is used for being connected with extraneous main frame, the other end connects controller, controller is connected with storage module by bus, described controller has adaptation function, and its adaptive process may further comprise the steps:
(1) power on after, wait for that main frame sends effective CMD0;
(2) whether the CMD0 of judgement reception is effectively, if continue then to wait for that main frame sends effective ACMD41 or effective CMD8;
Whether what (3) judgement received is effective ACMD41, if, then return Response R3, enable the parameter setting of SD1.1, card is handled as the SD1.1 card, adjusting storage card is the normal capacity card, adopts the normal capacity read-write mode to explain the internal storage access order that its aft engine sends, and promptly being interpreted as the represented data address of the Argument of internal storage access order with 1 byte is unit;
(4) as if judging the effective CMD8 that is that receives, then return Response R7;
(5) continue to wait for that main frame sends effective ACMD41;
Whether what (6) judgement received is effective ACMD41, if then judge the HCS bit that comprises among the ACMD41;
(7) if the HCS bit that comprises among the ACMD41 is ' 1 ', then return and comprise the CCS bit and be ' 1 ' Response R3, enable the parameter setting of SD2.0, card is handled as the SD2.0 card, adjust card and be the high power capacity card, explain the internal storage access order that its aft engine sends with the high power capacity read-write mode, promptly being interpreted as the represented data address of the Argument of internal storage access order with 512 bytes is unit;
(8) if the HCS bit that comprises among the ACMD41 is not ' 1 ', then return and comprise the CCS bit and be ' 0 ' Response R3, enable the parameter setting of SD2.0, card is handled as the SD2.0 card, adjust card and be the normal capacity card, explain the internal storage access order that its aft engine sends with the normal capacity read-write mode, promptly being interpreted as the represented data address of the Argument of internal storage access order with 1 byte is unit.
Described SD boundary element can adopt SD interface connector or golden finger.
Described memory module can adopt one or more memory devices.
Described memory device can adopt erasable, non-volatile semiconductor storage unit.
The present invention has following characteristic:
1. at the host platform of SD1.x, support the SD1.x standard, storage card is adjusted into the normal capacity card automatically, and the main frame of SD1.x can carry out read and write access to it with standard mode, i.e. it is unit that the represented data address of the Argument of internal storage access order will be interpreted as with 1 byte.
2. at the host platform of SD2.0, support the SD2.0 standard, storage card is adjusted into corresponding card automatically according to main frame: if main frame is supported high power capacity, and the corresponding high power capacity card that is adjusted into of storage card, it is unit that the represented data address of the Argument of internal storage access order is interpreted as with 512 bytes; Otherwise, if main frame is not supported high power capacity, the corresponding normal capacity card that is adjusted into of storage card, it is unit that the represented data address of the Argument of internal storage access order is interpreted as with 1 byte.
3. have the resemblance and the interface signal definition that meet SD2.0 standard and SD1.1/SD1.0 standard.
The invention solves common SD2.0 high-capacity memory cards can not be by the problem of the correct read-write of SD1.0/SD1.1 main frame.
Description of drawings
Fig. 1 is the availability synoptic diagram of main frame-generic card;
Fig. 2 is the availability synoptic diagram of main frame-adaptive memory card;
Fig. 3 is a structural representation block diagram of the present invention;
Fig. 4 is an adaptive process process flow diagram of the present invention.
Embodiment
As shown in Figure 2, be available between the main frame of adaptive SD memory card of the present invention and SD1.x, be that adaptive SD memory card can be supported the main frame of the SD2.0 of high power capacity and two kinds of read-write modes of normal capacity correctly to read and write simultaneously, also can be only supported the main frame of the SD1.x of normal capacity read-write mode correctly to read and write.
As shown in Figure 3, a kind of adaptive SD memory card comprises SD boundary element 1, controller 2 and memory module 3, and SD boundary element 1 one ends are used for being connected with extraneous main frame, and the other end connects controller 2, and controller 2 is connected by the FLASH access bus with memory module 3.
SD boundary element 1 can adopt SD interface connector or golden finger.
Controller 2 and SD boundary element 1 are together, finish the transmission of adaptive process, data of storage card and configuration, the report of state, interface function and the compatibility thereof of SD, also finish simultaneously operation to memory module 3, as the order of reading and writing, wiping and backup etc., can but to be not limited to be the integrated circuit of a single-chip; Memory module 3 can adopt one or more erasable, non-volatile semiconductor storage units, as flush memory device (Flash Memory), electrically-erasable ROM (read-only memory) (EEPROM) etc.
Controller 2 has adaptation function, and as shown in Figure 4, its adaptive process may further comprise the steps:
(1) adaptive memory card of the present invention is inserted main frame, after storage card powers on, wait for that main frame sends effective CMD0;
(2) judge whether the CMD0 that receives is effective.If continue then to wait for that main frame sends effective ACMD41 or effective CMD8;
Whether what (3) judgement received is effective ACMD41.If, then return Response R3, enable the parameter setting of SD1.1, card is handled as the SD1.1 card, adjusting storage card is the normal capacity card, adopt the normal capacity read-write mode to explain the internal storage access order that its aft engine sends, promptly being interpreted as the represented data address of the Argument of internal storage access order with 1 byte is unit;
(4) as if judging the effective CMD8 that is that receives, then return Response R7;
(5) continue to wait for that main frame sends effective ACMD41;
Whether what (6) judgement received is effective ACMD41, if then judge the HCS bit that comprises among the ACMD41;
(7) if the HCS bit that comprises among the ACMD41 is ' 1 ', then return and comprise the CCS bit and be ' 1 ' Response R3, enable the parameter setting of SD2.0, making card is the SD2.0 card, adjust card and be the high power capacity card, explain the internal storage access order that its aft engine sends with the high power capacity read-write mode, promptly being interpreted as the represented data address of the Argument of internal storage access order with 512 bytes is unit;
(8) if the HCS bit that comprises among the ACMD41 is not ' 1 ', then return and comprise the CCS bit and be ' 0 ' Response R3, enable the parameter setting of SD2.0, making card is the SD2.0 card, adjust card and be the normal capacity card, explain the internal storage access order that its aft engine sends with the normal capacity read-write mode, promptly being interpreted as the represented data address of the Argument of internal storage access order with 1 byte is unit.
Claims (4)
1. adaptive SD memory card, comprise SD boundary element (1), controller (2) and memory module (3), SD boundary element (1) one end is used for being connected with extraneous main frame, the other end connects controller (2), controller (2) is connected by bus with memory module (3), it is characterized in that: described storage card has adaptation function, and its adaptive process may further comprise the steps:
(1) power on after, wait for that main frame sends effectively order CMD0;
(2) whether the order CMD0 of judgement reception is effectively, waits for main frame transmission effective order ACMD41 or effectively orders CMD8 if then continue;
(3) judge to receive whether for effectively ordering ACMD41, answer R3 if then echo, enable the parameter setting of SD1.1, making card is the SD1.1 card, adjusting storage card is the normal capacity card, adopt the normal capacity read-write mode to explain the internal storage access order that its aft engine sends, promptly being interpreted as the represented data address of the parameter of internal storage access order with 1 byte is unit;
(4) if judge the effective order CMD8 of being receive, then echo and answer R7; Continue to wait for that main frame sends effectively order ACMD41; Judge to receive whether for effectively ordering ACMD41, support the HCS bit if then judge the high power capacity that comprises among the order ACMD41;
(a) if the high power capacity that comprises among the order ACMD41 supports that bit is ' 1 ', then return and comprise card capacity status CCS bit and be ' 1 ' response R3, enable the parameter setting of SD2.0, making card is the SD2.0 card, adjust card and be the high power capacity card, explain the internal storage access order that its aft engine sends with the high power capacity read-write mode, promptly being interpreted as the represented data address of the parameter of internal storage access order with 512 bytes is unit;
(b) if the high power capacity that comprises among the order ACMD41 supports bit not for ' 1 ', then return and comprise card capacity status bit and be ' 0 ' response R3, enable the parameter setting of SD2.0, making card is the SD2.0 card, adjust card and be the normal capacity card, explain the internal storage access order that its aft engine sends with the normal capacity read-write mode, promptly being interpreted as the represented data address of the parameter of internal storage access order with 1 byte is unit.
2. storage card as claimed in claim 1 is characterized in that: described SD boundary element (1) adopts SD interface connector or golden finger.
3. storage card as claimed in claim 1 is characterized in that: described memory module (3) adopts one or more memory devices.
4. storage card as claimed in claim 3 is characterized in that: described memory device adopts erasable, non-volatile semiconductor storage unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100491988A CN100373319C (en) | 2006-01-20 | 2006-01-20 | Adaptive SD memory card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100491988A CN100373319C (en) | 2006-01-20 | 2006-01-20 | Adaptive SD memory card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1804779A CN1804779A (en) | 2006-07-19 |
| CN100373319C true CN100373319C (en) | 2008-03-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100491988A Expired - Fee Related CN100373319C (en) | 2006-01-20 | 2006-01-20 | Adaptive SD memory card |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100357875C (en) * | 2006-01-25 | 2007-12-26 | 骆建军 | SD memory card capable of automatically adjusting capacity |
| CN102253809A (en) * | 2010-05-17 | 2011-11-23 | 中兴通讯股份有限公司 | Composite memory card and control method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1464363A (en) * | 2002-06-17 | 2003-12-31 | 万国电脑股份有限公司 | Storage card common adapter and method of switching and judging of common terminal |
| WO2004095363A1 (en) * | 2003-04-23 | 2004-11-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor recording device |
| CN1549147A (en) * | 2003-05-15 | 2004-11-24 | 群联电子股份有限公司 | Memory storage device control system with double interfaces |
| CN1584816A (en) * | 2004-06-03 | 2005-02-23 | 瑞程科技股份有限公司 | Storing card with multi-interfae function and transmitting mode selective method |
| US6886083B2 (en) * | 2001-10-22 | 2005-04-26 | Kabushiki Kaisha Toshiba | Apparatus and method for controlling a card device |
-
2006
- 2006-01-20 CN CNB2006100491988A patent/CN100373319C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6886083B2 (en) * | 2001-10-22 | 2005-04-26 | Kabushiki Kaisha Toshiba | Apparatus and method for controlling a card device |
| CN1464363A (en) * | 2002-06-17 | 2003-12-31 | 万国电脑股份有限公司 | Storage card common adapter and method of switching and judging of common terminal |
| WO2004095363A1 (en) * | 2003-04-23 | 2004-11-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor recording device |
| CN1549147A (en) * | 2003-05-15 | 2004-11-24 | 群联电子股份有限公司 | Memory storage device control system with double interfaces |
| CN1584816A (en) * | 2004-06-03 | 2005-02-23 | 瑞程科技股份有限公司 | Storing card with multi-interfae function and transmitting mode selective method |
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| Publication number | Publication date |
|---|---|
| CN1804779A (en) | 2006-07-19 |
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Granted publication date: 20080305 Termination date: 20130120 |